CN1747264A - The manufacture method of laser of distributed Blatt reflective semiconductor with tuning wavelength - Google Patents
The manufacture method of laser of distributed Blatt reflective semiconductor with tuning wavelength Download PDFInfo
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- CN1747264A CN1747264A CN 200410073859 CN200410073859A CN1747264A CN 1747264 A CN1747264 A CN 1747264A CN 200410073859 CN200410073859 CN 200410073859 CN 200410073859 A CN200410073859 A CN 200410073859A CN 1747264 A CN1747264 A CN 1747264A
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Abstract
A kind of manufacture method of tunable wave length distributed Bragg reflection laser comprises: the method for utilizing metal organic chemical vapor deposition extension lower limit layer successively on n type InP substrate, Multiple Quantum Well, upper limiting layer, InP resilient coating; Deposition dielectric film; Mask lithography is made and is injected the protection figure, stays deielectric-coating at gain region, and all the other zonal corrosions fall deielectric-coating; Carry out the P ion and inject, erode the remaining deielectric-coating in surface then; The deposition dielectric film again on the surface; Rapid thermal annealing; Erode deielectric-coating 7, the InP resilient coating; Make grating in wave guide zone; Etching barrier layer; Make the ridge structure, form waveguide; Utilize mask lithography, and carry out photoetching corrosion, form isolating trenches, large tracts of land deposit SiO
2Layer, and carry out the He ion and inject and to make isolating trenches become high resistance area; On the ridged bar, open electrode window through ray, the sputter p side electrode, behind the attenuate, back side evaporation N face electrode; Cleavage goes out single tunable wave length distributed Bragg reflection laser tube core.
Description
Technical field
The present invention relates to the manufacture method of the manufacture method of semiconductor laser, particularly laser of distributed Blatt reflective semiconductor with tuning wavelength.
Background technology
Semiconductor laser with tunable wavelength is the Primary Component in wavelength division multiplexing (WDM) optical communication system, is with a wide range of applications.From material behavior, semiconductor laser with tunable wavelength needs two kinds of different band gap wavelength materials integrated: for example for the laser of distributed Blatt reflective semiconductor with tuning wavelength that is operated in 1.55um low loss fiber communication window, needing band gap wavelength is that gain material and the band gap wavelength of 1.55um is integrated less than the low-loss waveguide material plane of 1.50um.
Zones of different realizes that the integrated method of different band gap wavelength materials comprises on same epitaxial wafer at present: butt joint growth (Butt-joint) and selection region growing (Selective Area Growth).Corrosion/regrowth techniques is adopted in the butt joint growth, and different band gap wavelength materials realize that in different epitaxial processes the extension number of times of increase makes device making technics become complicated, and butt joint interface is difficult to eliminate fully reflection and optical coupling loss usually; Selecting region growing is by the facilitation of SiO2 deielectric-coating for the MOCVD growth, realize different band gap wavelengths in zones of different, but, device function is caused certain influence because the horizontal proliferation of growth gasses causes having the transition region greater than 30um between the different band gap wavelength region may.
Summary of the invention
The objective of the invention is to propose a kind of new producing method of laser of distributed Blatt reflective semiconductor with tuning wavelength, be characterized in need not extra waveguide butt joint growth, simplified manufacturing process, have the low and high advantage of rate of finished products of cost.
The manufacture method of a kind of tunable wave length distributed Bragg reflection laser of the present invention is characterized in that, may further comprise the steps:
Step 1: the method for utilizing metal organic chemical vapor deposition extension lower limit layer successively on n type InP substrate, Multiple Quantum Well, upper limiting layer, InP resilient coating;
Step 2: deposition dielectric film;
Step 3: mask lithography is made and is injected the protection figure, stays deielectric-coating at gain region, and all the other zonal corrosions fall deielectric-coating;
Step 4: carry out the P ion on the epitaxial wafer surface and inject, erode the remaining deielectric-coating in surface then;
Step 5: deposition dielectric film again on the surface;
Step 6: epitaxial wafer is placed quick anneal oven, under the nitrogen protection environment, rapid thermal annealing;
Step 7: erode deielectric-coating, the InP resilient coating;
Step 8: adopt holographic exposure technology and dried wet etching technique to make grating in wave guide zone;
Step 9: utilize MOCVD method epitaxial growth p-InP, p-InGaAsP etching barrier layer, p-InP, p-InGaAs;
Step 10: utilize wet etching and etching barrier layer, make the ridge structure, form waveguide;
Step 11: utilize mask lithography, and carry out photoetching corrosion, form isolating trenches, large tracts of land deposit SiO
2Layer, and carry out the He ion and inject and to make isolating trenches become high resistance area;
Step 12: on the ridged bar, open electrode window through ray, the sputter p side electrode, behind the attenuate, back side evaporation N face electrode;
Step 13: cleavage goes out single tunable wave length distributed Bragg reflection laser tube core.
Wherein the InP buffer layer thickness between 2000 nanometers, its role is to prevent that phosphonium ion is injected in the InGaAsP Multiple Quantum Well in 50 nanometers.
Wherein deielectric-coating is silicon dioxide or silicon nitride or silicon oxynitride or photoresist or other deielectric-coating, its role is to prevent that phosphonium ion in the step 4 is injected in the InP resilient coating on the laser active area.
Wherein phosphonium ion inject energy 10 kiloelectron-volts between 1 million electro-volt, dosage is 1 * 10
13Every square centimeter to 1 * 10
15Between every square centimeter, its role is to produce point defect in the InP resilient coating, the injection energy should guarantee to inject the degree of depth and be no more than the InP resilient coating.
Wherein deielectric-coating is silicon dioxide or silicon nitride or silicon oxynitride or other deielectric-coating, its role is to prevent that the InP thermal decomposition causes the epitaxial wafer surface degradation in the rapid thermal annealing process.
Wherein the temperature of rapid thermal annealing is between 650 degrees centigrade to 800 degrees centigrade, the time of rapid thermal annealing is between 20 seconds to 20 minutes, its role is to activate phosphonium ion injects the point defect that produces and it is moved to Multiple Quantum Well, cause trap/barrier material component generation counterdiffusion, thereby make the quantum well band gap wavelength blue shift.
The present invention designs a kind of new producing method of laser of distributed Blatt reflective semiconductor with tuning wavelength, and the quantum well mixing technology of injecting by phosphonium ion realizes.Its basic principle is as follows: carry out phosphonium ion and inject the generation point defect in the InP resilient coating, and point defect is moved, cause the trap/barrier material generation counterdiffusion of quantum well active area, the trap of quantum well is wide to be changed with component, thereby make the band gap wavelength blue shift of quantum well, form self aligned wave guide zone.For traditional manufacture method, have the following advantages:
1, need not extra epitaxial growth and can realize different band gap wavelengths in same epitaxial wafer zones of different, technology is simple, has reduced cost;
2, the extra optical absorption loss that gradual transition is brought has been eliminated in the quick transition of gain region and wave guide zone (＜3 microns);
3, gain region and wave guide zone are self aligned, so coupling efficiency height (near 100%), reflect little (＜0.01%);
4, adopt the semiconductor device fabrication process of standard, good reproducibility is realized easily.
Description of drawings
Specify the example that this method is made the tunable wave length distributed Bragg reflection laser below in conjunction with accompanying drawing, wherein:
Fig. 1 is the quantum well gain region structure;
Fig. 2 is that phosphonium ion injects the protection figure;
Fig. 3 is the schematic diagram behind the deposition dielectric film;
Fig. 4 is a schematic diagram of making grating;
Fig. 5 is a contact layer growth schematic diagram behind the making grating;
Fig. 6 is the structural representation of syllogic tunable wave length distributed Bragg reflection laser.
Embodiment
See also accompanying drawing 1-Fig. 6, the manufacture method of a kind of tunable wave length distributed Bragg reflection laser of the present invention may further comprise the steps:
Step 1: utilize MOCVD method extension lower limit layer 2 successively on n type InP substrate 1, Multiple Quantum Well 3, upper limiting layer 4, InP resilient coating 5 (as shown in Figure 1);
Step 2: deposition dielectric film 6 its role is to prevent that phosphonium ion is injected into gain region;
Step 3: mask lithography is made and is injected the protection figure, stays deielectric-coating 6 at gain region, and all the other zonal corrosions fall deielectric-coating 6 (as shown in Figure 2);
Step 4: carry out the P ion on the epitaxial wafer surface and inject, erode the remaining deielectric-coating 6 in surface then, form point defect in the InP resilient coating that its role is in wave guide zone;
Step 5: the deposition dielectric film 7 (as shown in Figure 3) again on the surface is used for the surface at rapid thermal annealing process protection semi-conducting material;
Step 6: epitaxial wafer is placed quick anneal oven (Rapid Thermal Anealer), and under the nitrogen protection environment, rapid thermal annealing to activate point defect, causes quantum well mixing;
Step 7: erode deielectric-coating 7, InP resilient coating 5;
Step 8: adopt holographic exposure technology and dried wet etching technique to make grating 8 (as shown in Figure 4), to realize frequency-selecting effect to single wavelength in wave guide zone;
Step 9: utilize MOCVD method epitaxial growth p-InP 9, p-InGaAsP etching barrier layer 10, p-InP 11, and p-InGaAs 12 (as shown in Figure 5) forms contact layer;
Step 10: utilize wet etching and etching barrier layer, make the ridge structure, form waveguide;
Step 11: utilize mask lithography, and carry out photoetching corrosion, form isolating trenches 13, large tracts of land deposit SiO
2 Layer 14, and carry out the He ion and inject and to make isolating trenches 13 become high resistance area;
Step 12: on the ridged bar, open electrode window through ray, sputter p side electrode 15, behind the attenuate, back side evaporation N face electrode 16, and annealing forms ohmic contact;
Step 13: cleavage goes out single tunable wave length distributed Bragg reflection laser tube core, the structure of whole tube core (as shown in Figure 6).
Wherein InP resilient coating 5 thickness between 2000 nanometers, its role is to prevent that phosphonium ion is injected in the InGaAsP Multiple Quantum Well 3 in 50 nanometers.
6 wherein deielectric-coating 6 be silicon dioxide or silicon nitride or silicon oxynitride or photoresist or other deielectric-coating, its role is to prevent that phosphonium ion in the step 4 is injected in the InP resilient coating 5 on the laser active area.
Wherein phosphonium ion inject energy 10 kiloelectron-volts between 1 million electro-volt, dosage is 1 * 10
13Every square centimeter to 1 * 10
15Between every square centimeter, its role is to produce point defect in InP resilient coating 5, the injection energy should guarantee to inject the degree of depth and be no more than InP resilient coating 5.
Wherein deielectric-coating 6 is silicon dioxide or silicon nitride or silicon oxynitride or other deielectric-coating, its role is to prevent that the InP thermal decomposition causes the epitaxial wafer surface degradation in the rapid thermal annealing process.
Wherein the temperature of rapid thermal annealing is between 650 degrees centigrade to 800 degrees centigrade, the time of rapid thermal annealing is between 20 seconds to 20 minutes, its role is to activate phosphonium ion injects the point defect that produces and it is moved to Multiple Quantum Well, cause trap/barrier material component generation counterdiffusion, thereby make the quantum well band gap wavelength blue shift.
The present invention compared with prior art has:
1, need not extra epitaxial growth and can realize different band gap wavelengths in same epitaxial wafer zones of different, technology is simple, has reduced cost;
2, the extra optical absorption loss that gradual transition is brought has been eliminated in the quick transition of gain region and wave guide zone (＜3 microns);
3, gain region and wave guide zone are self aligned, so coupling efficiency height (near 100%), reflect little (＜0.01%);
4, adopt the semiconductor device fabrication process of standard, good reproducibility is realized easily.
Claims (6)
1, a kind of manufacture method of tunable wave length distributed Bragg reflection laser is characterized in that, may further comprise the steps:
Step 1: the method for utilizing metal organic chemical vapor deposition extension lower limit layer successively on n type InP substrate, Multiple Quantum Well, upper limiting layer, InP resilient coating;
Step 2: deposition dielectric film;
Step 3: mask lithography is made and is injected the protection figure, stays deielectric-coating at gain region, and all the other zonal corrosions fall deielectric-coating;
Step 4: carry out the P ion on the epitaxial wafer surface and inject, erode the remaining deielectric-coating in surface then;
Step 5: deposition dielectric film again on the surface;
Step 6: epitaxial wafer is placed quick anneal oven, under the nitrogen protection environment, rapid thermal annealing;
Step 7: erode deielectric-coating, the InP resilient coating;
Step 8: adopt holographic exposure technology and dried wet etching technique to make grating in wave guide zone;
Step 9: utilize MOCVD method epitaxial growth p-InP, p-InGaAsP etching barrier layer, p-InP, p-InGaAs;
Step 10: utilize wet etching and etching barrier layer, make the ridge structure, form waveguide;
Step 11: utilize mask lithography, and carry out photoetching corrosion, form isolating trenches, large tracts of land deposit SiO
2Layer, and carry out the He ion and inject and to make isolating trenches become high resistance area;
Step 12: on the ridged bar, open electrode window through ray, the sputter p side electrode, behind the attenuate, back side evaporation N face electrode;
Step 13: cleavage goes out single tunable wave length distributed Bragg reflection laser tube core.
2, the manufacture method of tunable wave length distributed Bragg reflection laser according to claim 1, it is characterized in that: wherein the InP buffer layer thickness between 2000 nanometers, its role is to prevent that phosphonium ion is injected in the InGaAsP Multiple Quantum Well in 50 nanometers.
3, the manufacture method of tunable wave length distributed Bragg reflection laser according to claim 1, it is characterized in that: wherein deielectric-coating is silicon dioxide or silicon nitride or silicon oxynitride or photoresist or other deielectric-coating, its role is to prevent that phosphonium ion in the step 4 is injected in the InP resilient coating on the laser active area.
4, the manufacture method of tunable wave length distributed Bragg reflection laser according to claim 1 is characterized in that: wherein phosphonium ion inject energy 10 kiloelectron-volts between 1 million electro-volt, dosage is 1 * 10
13Every square centimeter to 1 * 10
15Between every square centimeter, its role is to produce point defect in the InP resilient coating, the injection energy should guarantee to inject the degree of depth and be no more than the InP resilient coating.
5, the manufacture method of tunable wave length distributed Bragg reflection laser according to claim 1, it is characterized in that: wherein deielectric-coating is silicon dioxide or silicon nitride or silicon oxynitride or other deielectric-coating, its role is to prevent that the InP thermal decomposition causes the epitaxial wafer surface degradation in the rapid thermal annealing process.
6, the manufacture method of tunable wave length distributed Bragg reflection laser according to claim 1, it is characterized in that: wherein the temperature of rapid thermal annealing is between 650 degrees centigrade to 800 degrees centigrade, the time of rapid thermal annealing is between 20 seconds to 20 minutes, its role is to activate phosphonium ion injects the point defect that produces and it is moved to Multiple Quantum Well, cause trap/barrier material component generation counterdiffusion, thereby make the quantum well band gap wavelength blue shift.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101774540A (en) * | 2010-02-09 | 2010-07-14 | 浙江大学 | Quantum well mixing method |
| CN101621179B (en) * | 2008-07-02 | 2010-10-27 | 中国科学院半导体研究所 | Method for manufacturing sampled grating distributted bragg reflector semiconductor laser |
| CN101895061A (en) * | 2010-08-03 | 2010-11-24 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser realizing high-power coherent light emission by utilizing grating |
| CN101908715A (en) * | 2010-08-03 | 2010-12-08 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser for realizing lock phase with optical grating |
| CN101697341B (en) * | 2009-10-29 | 2011-11-30 | 浙江大学 | Method for mixing quantum wells |
| CN105409071A (en) * | 2013-04-30 | 2016-03-16 | 华为技术有限公司 | Tunable laser with high thermal wavelength tuning efficiency |
| CN107346859A (en) * | 2017-07-26 | 2017-11-14 | 江苏舒适照明有限公司 | A kind of preparation method of white light source |
| CN110941048A (en) * | 2019-12-24 | 2020-03-31 | 中国科学院半导体研究所 | High extinction ratio coarse wavelength division multiplexer/demultiplexer based on multi-mode interference principle |
| CN112152581A (en) * | 2020-08-24 | 2020-12-29 | 杭州星阖科技有限公司 | Bragg acoustic wave reflecting layer structure, manufacturing method thereof and solid assembled resonator |
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2004
- 2004-09-06 CN CN 200410073859 patent/CN1747264A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101621179B (en) * | 2008-07-02 | 2010-10-27 | 中国科学院半导体研究所 | Method for manufacturing sampled grating distributted bragg reflector semiconductor laser |
| CN101697341B (en) * | 2009-10-29 | 2011-11-30 | 浙江大学 | Method for mixing quantum wells |
| CN101774540A (en) * | 2010-02-09 | 2010-07-14 | 浙江大学 | Quantum well mixing method |
| CN101774540B (en) * | 2010-02-09 | 2013-04-03 | 浙江大学 | Quantum well mixing method |
| CN101895061A (en) * | 2010-08-03 | 2010-11-24 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser realizing high-power coherent light emission by utilizing grating |
| CN101908715A (en) * | 2010-08-03 | 2010-12-08 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser for realizing lock phase with optical grating |
| CN105409071A (en) * | 2013-04-30 | 2016-03-16 | 华为技术有限公司 | Tunable laser with high thermal wavelength tuning efficiency |
| CN105409071B (en) * | 2013-04-30 | 2020-04-21 | 华为技术有限公司 | Tunable laser with high thermal wavelength tuning efficiency |
| CN107346859A (en) * | 2017-07-26 | 2017-11-14 | 江苏舒适照明有限公司 | A kind of preparation method of white light source |
| CN110941048A (en) * | 2019-12-24 | 2020-03-31 | 中国科学院半导体研究所 | High extinction ratio coarse wavelength division multiplexer/demultiplexer based on multi-mode interference principle |
| CN110941048B (en) * | 2019-12-24 | 2020-12-15 | 中国科学院半导体研究所 | High extinction ratio coarse wavelength division multiplexer/demultiplexer based on multi-mode interference principle |
| CN112152581A (en) * | 2020-08-24 | 2020-12-29 | 杭州星阖科技有限公司 | Bragg acoustic wave reflecting layer structure, manufacturing method thereof and solid assembled resonator |
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