CN1874088A - Buried heterostructure semiconductor optical device with blue shift effect of wavelengh, and method - Google Patents
Buried heterostructure semiconductor optical device with blue shift effect of wavelengh, and method Download PDFInfo
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- CN1874088A CN1874088A CNA2005100118485A CN200510011848A CN1874088A CN 1874088 A CN1874088 A CN 1874088A CN A2005100118485 A CNA2005100118485 A CN A2005100118485A CN 200510011848 A CN200510011848 A CN 200510011848A CN 1874088 A CN1874088 A CN 1874088A
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Abstract
The method includes steps: (1) using general chemical vapor deposition (CVD) develops silicon dioxide; producing gallium vacancy in use for intermixing quanta trap on top layer of primal chip of epitaxial structure selectively; (2) through CVD of metal organic compound, epitaxial growth procedure of reversion junction prompt diffusion from gallium vacancy intermixing quanta trap to region of quanta trap so as to realize quanta interlardation, and blue shift of band gap wavelength; (3) in whole procedure of interlardation of quanta trap, non-interlardation region is well protected. The disclosed method is applicable to preparing parts needed blue shift of band gap wavelength.
Description
Technical field
The present invention relates to the optical semiconductor technical field, particularly a kind of buried heterostructure semiconductor optical device and method with wavelength blue shift effect.
Background technology
The wavelength blue shift effect is the problem of photoelectron technology field broad research in recent years.For high power semiconductor lasers, utilize the wavelength blue shift effect to make the broad-band gap window region, can reduce chamber face light absorption, thereby improve the generation of chamber face optical damage (COD) power or inhibition COD.And for integrated opto-electronic device, wavelength blue shift can form fiber waveguide or exciton uptake zone, for example for optical fiber communication EML, the material of band gap wavelength is as gain region near needing 1.55 microns, make laser, and the material of band gap wavelength blue shift 50nm is made electroabsorption modulator as the exciton uptake zone.In addition, in the single slice photon integrated circuit, bigger band gap wavelength blue shift zone is fit to make the passive low-loss optically waveguide of formation.
(Quantum well Intermixing QWI) (claims that again quantum well is unordered) and can change the band gap of material to quantum well mixing, thereby has obtained using widely in the photoelectron technology field.The method of quantum well mixing has multiple, comprising: unordered, the pure room diffusion of impurity induced (IFVD) is induced unordered, and the induced with laser quantum well is unordered etc.The QWI technology realizes that wavelength blue shift generally comprises three steps: 1, produce a large amount of point defects on the surface of quantum-well materials; 2, under certain incentive condition, impel point defect to move to the quantum well area; 3, the mobile of point defect induced mixing of quantum well and barrier material, thereby causes the variation of quantum well shape, causes the quantum well band gap wavelength blue shift.The InGaAs/InGaAsP material surface is carried out ion injection or high temperature (for example 850 ℃) generation point defect or Ga room, rapid thermal annealing (Rapid Thermal Annealing, RTA) point defect or Ga room are spread to quantum well region, induce mixing of trap barrier material.In the method for QWI, pure room diffusion (IFVD) is a kind of simple and more manageable quantum well mixing method (I.Gontigo, T.Krauss, J.H.Marsh, IEEE JQE.30 (5), 1189 (1994); S.Burkner, J.D.Ralston, S.Weisser.et al., IEEE, PTL 7 (9), and 941 (1995)).In the manufacturing process of integrated photonic device, what need is the quantum well mixing of realizing regioselectivity.IFVD above-mentioned must (carry out under surpassing 750 ℃ usually under the higher annealing temperature; about 1 minute of annealing time) handles; it is a key issue that the non-motley zone is not promptly needed the protection in band gap wavelength blue shift zone; the silicon nitride medium film protection non-motley zone quantum-well materials that general employing is high-purity suppresses this regional band gap wavelength blue shift.And the silicon nitride film of conventional plasma-reinforced chemical hydatogenesis (PECVD) method deposit contains aerobic usually, this may cause the non-motley district that serious quantum well mixing also takes place (M.Kuzuhara et al., JAP 66,5833 (1989).This shows, though IFVD can realize bigger wavelength blue shift at short notice, need very high RTA temperature, this makes to the protection in non-motley district quite difficult.What need to replenish is: adopt strontium fluoride film or phosphorosilicate glass to cover sample surfaces and can more effectively suppress quantum well mixing among the RTA, but because lattice constant generally only is used for the protection in gallium arsyl material non-motley zone.
The mechanism of the QWI of IFVD is generally believed to be: in the high-temperature thermal annealing process, with SiO
2Ga atom among the InGaAsP of contact outwards diffuses into SiO
2In, thus in the InGaAsP of sample surfaces, produce the Ga room, the Ga room inwardly is diffused into quantum well region, make trap and build in the counterdiffusion of atom, thereby realize that the quantum well component mixes.
If in the reative cell that is full of with the metallo-organic compound chemical vapor deposition (MOCVD) of the arsine of material growth conditions same ratio and phosphine, heat-treat; protection can not be damaged in high temperature yet even the surface in non-motley district has the silicon nitride medium film, but this has increased the complexity and the cost of technology undoubtedly.QWI for IFVD; whether can adopt certain mode to produce the Ga room, realize step 2 and the step 3 (meanwhile well protecting the non-motley district again) of aforementioned QWI then by other technologies? experiment shows the method growth SiO of general chemistry vapour deposition (CVD)
2Under certain condition can with SiO
2The InGaAsP material surface of contact produces the Ga room.Making low threshold value, high-speed laser, during devices such as semiconductor optical amplifier and EML,, improve optical field distribution in order to limit electric current, usually adopt the BH structure.The BH structure devices need be after eroding away table top the reverse PN junction of epitaxial growth as current barrier layer, the process of the reverse PN junction of MOCVD epitaxial growth can realize step 2 and the step 3 of QWI just simultaneously, promptly impel the point defect (Ga room) that has been created in sample surfaces to move effectively, induce mixing of quantum well and barrier material to the quantum well area.So just can both realize the QWI of miscellaneous area, protect the non-motley district simultaneously again.The blue shift amount of wavelength is mainly by general chemistry vapour deposition (CVD) growth SiO
2Process conditions and and SiO
2The material component decision of the InGaAsP of contact.
Summary of the invention
The present invention proposes a kind of buried heterostructure (BH) optical semiconductor with wavelength blue shift effect, sets forth in detail the quantum well mixing and the manufacture method of buried heterostructure optical device, purpose is to realize the band gap wavelength blue shift of same active area structure specific region by structural design and special process in the buried heterostructure epitaxial growth, thus the complexity and the cost of reduction common process.Experimental result shows that blue shift amount can be controlled by technological parameter, and the zone that obtains wavelength blue shift has higher quality of materials, and the laser of producing has lower internal loss and acceptable internal quantum efficiency.
The technical solution adopted in the present invention (is example with the InP sill) is: as shown in Figure 1, the top layer of an epitaxial structure sheet adopts InGaAsP (InGaAsP) quaternary layer 5 and indium phosphorus (InP) layer 6, adopt selective corrosion to remove top layer InP layer 6 at the zone that needs wavelength blue shift (hybrid region), do not need the zone (non-motley district) of blue shift to keep on 6, epitaxial structure sheet of InP floor with general chemistry vapour deposition (CVD) growth layer of silicon dioxide (SiO
2), condition is: 350 ℃-400 ℃, and SiH
4: 0.6L/min, O
2: 1.3L/min, N
2: 4L/min, thickness is at 200nm-350nm.Etch SiO with conventional photoetching method
2Bar shaped utilizes SiO
2Bar erodes away table top (mesa) as sheltering (mask), removes SiO
2, with conventional BH growing method epitaxial growth PN reverse junction, on active area, open current channel, the covering of epitaxial growth device again, contact layer etc.Also can be at the SiO that grown with CVD
2SiO is removed in the back
2, erode away mesa as mask with photoresist, remove photoresist then, with conventional BH growing method epitaxial growth PN reverse junction, on active area, open current channel, the covering of epitaxial growth device again, contact layer etc.
Photoluminescence spectrum (PL) test result shows removes SiO
2Back miscellaneous area material wavelength of fluorescence has very little wavelength blue shift, and intensity does not have big variation, and behind the extension BH, the hybrid region excitation wavelength has obvious blue shift, thereby can infer: growing SiO
2After, the Ga room of hybrid region mainly is distributed in material surface, because growth SiO
2Temperature lower, the room is failed to be energized and is diffused into quantum well region and realizes quantum well mixing.The zone (non-motley district) that keeps InP under general temperature not can with SiO
2Effect just can not produce the room at material surface yet.If (grown SiO in large tracts of land
2After carry out conventional RTA process, hybrid region will be energized induces mixing of quantum well and barrier material, band gap wavelength blue shift, but not hybrid region also can be at high temperature and SiO
2A spot of wavelength blue shift takes place in effect, but we need is that non-hybrid region does not have wavelength blue shift).
Need to prove: the method for general chemistry vapour deposition (CVD) is at the epontic SiO of InGaAsP (the particularly higher material of gallium content)
2, oxygen content is higher, and Si-O key easy fracture, and the gallium atom easily outwards diffuses into SiO
2In, thereby in InGaAsP, produce the gallium room.Thereby the quantum well mixing district is at growth SiO
2Process in, the gallium atom and the SiO of its InGaAsP surfacing
2Effect produces the room in InGaAsP quaternary layer 5.And PECVD growth SiO
2Generally can in InGaAsP quaternary layer, not produce the Ga room.
(temperature is arranged on 650 ℃ in the BH epitaxial process, growth time is according to oppositely PN junction thickness is definite, generally about 1 hour), the gallium room inwardly is diffused into the quantum well active area, makes that counterdiffusion is taking place the atom in the trap base at the interface, cause material component to change, thereby the band gap wavelength blue shift, counterdiffusion will be to a certain degree being tending towards saturated, and blue shift amount can not continue to increase, therefore, blue shift amount is mainly by growth SiO
2The time room amount decision that produces on InGaAsP surface.
Here removed SiO before it is pointed out that the BH extension
2Be because: on the one hand, prevent that the non-motley district from a spot of wavelength blue shift taking place in the BH growth course; On the other hand, the SiO of general chemistry vapor deposition method growth
2Easily produce oxygen or oxide, cause chamber contamination.In addition, remove SiO
2, the reverse PN junction of large area deposition also has the SiO of ratio
2Shelter and select regrowth to control easily, but need increase a photoetching, erode away current channel.Make device with this method of opening current channel and can lack a MOCVD growth, because mask etch with photoresist goes out mesa after having made grating with grating.
There is the non-motley zone of InP layer on the surface at the SiO that grown
2After do not produce the gallium room, thereby can after the BH epitaxial growth, not cause the blue shift of band gap wavelength.So just effectively protected the non-motley district.
Have buried heterostructure (BH) optical semiconductor of wavelength blue shift effect, can realize the material band gap wavelength blue shift of specific region by optical device structural design and special process.In integrated device is made, the band gap wavelength blue shift can be used as fiber waveguide or exciton uptake zone etc., this novel buried heterostructure quantum well mixing device has more design flexible and simpler technology, be particularly suitable for making the integrated distributed feedback laser of buried heterostructure electroabsorption modulator (electro-absorption modulator DFB laser, EML).
Technical scheme
A kind of buried heterostructure semiconductor optical device manufacture method with wavelength blue shift effect, its step is as follows:
(1) adopts general chemistry vapour deposition growthing silica, produce the gallium room that is used for quantum well mixing an epitaxial structure sheet top layer selectivity;
(2) process of metallo-organic compound chemical vapor deposition epitaxial growth reverse junction impels the gallium room in quantum well mixing district to spread to quantum well region, realizes that quantum mixes and the band gap wavelength blue shift;
(3) the non-motley district is subjected to good protection in the whole process of quantum well mixing and band gap wavelength blue shift.
General chemistry vapour deposition growthing silica, produce the implementation method in the gallium room that is used for quantum well mixing an epitaxial structure sheet top layer selectivity, need the top layer in the quantum well mixing district of wavelength blue shift to adopt InGaAsP quaternary layer material, the condition of general chemistry vapour deposition growthing silica is: 350 ℃-400 ℃, and SiH
4: 0.6L/min, O
2: 1.3L/min, N
2: 4L/min, thickness is at 200nm-350nm.
Metallo-organic compound chemical vapor deposition epitaxial growth reverse junction impels the gallium room in quantum well mixing district to spread to quantum well region, the realization quantum mixes the implementation process with the band gap wavelength blue shift, the temperature of growth reverse junction is arranged on 580 ℃-655 ℃, and growth time was at 0.5 hour-1.5 hours.
The non-motley district is subjected to good protection in the whole process of quantum well mixing, indium phosphorus floor is left on the surface in non-motley district, and thickness surpasses 30nm, and logical all the time five clan sources are (as AsH in the process of metallo-organic compound chemical vapor deposition epitaxial growth reverse junction
3, PH
3) protection.
Described buried heterostructure optical device manufacture method with wavelength blue shift effect needs to leave current channel so that electric current is injected with the source region from electrode after comprising the reverse junction of having grown, and the width of current channel is 1 micron-2 microns.
The quantum well mixing and the manufacture method of the buried heterostructure optical device that the present invention proposes can be widely used in the various making that need the device of band gap wavelength blue shift.
Description of drawings
Fig. 1 is once the outer structural representation of delaying.
Fig. 2 is the structural representation after hybrid region is removed top layer InP layer.
Fig. 3 is large area deposition SiO
2Structural representation behind the layer.
Fig. 4 is that chemical wet etching goes out SiO
2Structural representation after the bar shaped.
Fig. 5 utilizes SiO
2Bar goes out structural representation behind the table top as mask etch.
Fig. 6 removes SiO
2Shelter the structural representation behind the bar.
Fig. 7 is the structural representation behind the reverse PN junction current barrier layer of growth.
Fig. 8 is the structural representation of leaving in the reverse PN junction above active area behind the current channel.
Fig. 9 is the structural representation behind extension p type InP covering and the p type heavy doping InGaAs electric contacting layer.
Figure 10 is the full structural representation of the BH device produced at last.
Figure 11 is scanning electron microscopy (SEM) the photo figure of the full structure of BH device produced at last.
Figure 12 is the PL spectrum test result figure of an epitaxial structure, and peak wavelength is at 1650nm.
Figure 13 is the sharp spectrogram of penetrating of the laser tube core that goes out of quantum well mixing district cleavage, and peak wavelength is near 1590nm.
Figure 14 is the sharp spectrogram of penetrating of the laser tube core that goes out of non-hybrid region cleavage, and peak wavelength is near 1652nm.
Figure 15 is the PI test result figure of the laser tube core that goes out of quantum well mixing district cleavage.
Figure 16 is the PI test result figure of the laser tube core that goes out of non-hybrid region cleavage.
Figure 17 is the device internal quantum efficiency that simulates of the external differential quantum efficiency of the long laser tube core of different cavity that goes out according to quantum well mixing district cleavage and the figure as a result of internal loss.
Figure 18 is the device internal quantum efficiency that simulates of the external differential quantum efficiency of the long laser tube core of different cavity that goes out according to non-motley district cleavage and the figure as a result of internal loss.
Figure 19 is that the epitaxial structure sheet of wavelength 1530nm is being composed comparison diagram with the PL before and after the buried heterostructure quantum well mixing.
Embodiment
In order to further specify content of the present invention, below in conjunction with accompanying drawing and instantiation the present invention is explained in detail, this example is to realize selecting the BH device of regional QWI:
(1) ducting layer 5, eigen I nP top layer 6 on epitaxial growth n type InP resilient coating 2, eigen I nGaAsP quaternary lower waveguide layer 3, eigen I nGaAsP Multiple Quantum Well (MQWs) active layer 4, eigen I nGaAsP quaternary on the n type InP substrate 1.The growth order of each layer is seen shown in the accompanying drawing 1.Wherein ducting layer should contain the Ga of higher proportion on the InGaAsP quaternary, thereby band gap wavelength is at 1.2 microns-1.3 microns, and thickness is at 50nm-120nm, and the InP top layer thickness should surpass 30nm.
Adopt selective corrosion to remove top layer InP layer at the zone that needs wavelength blue shift (hybrid region), and do not need the zone (non-motley district) of blue shift to keep the InP floor, as shown in accompanying drawing 2.Among the figure not the zone of place to go InP floor be the non-motley district.
(2) on epitaxial structure sheet with the method growth SiO of general chemistry vapour deposition (CVD)
2 Layer 7, condition is: 360 ℃, SiH
4: 0.6L/min, O
2: 1.3L/min, N
2: 4L/min, thickness 250nm, as shown in Figure 3.
(3) etch SiO with conventional photoetching method
2Bar shaped, width are 2.5 microns, as shown in Figure 4, utilize SiO
2Bar erodes away table top (mesa) as sheltering (mask), as shown in Figure 5.
(4) remove SiO
2Bar shaped shelters 7, as shown in Figure 6.On the table top that erodes away with MOCVD growth one deck P type InP layer 8, thickness 600nm-1000nm, doping content is 4E17-6E17cm
-3, regrowth one deck N type InP layer 9, thickness 600nm-1000nm, doping content is 1E18-2E18cm
-3, as shown in Figure 7, so just formed PN reverse junction current barrier layer.
(5) directly over active area bar 4, leave current channel 10 with lithography corrosion process, so as electric current from then on passage be injected with the source region, the width of current channel is 2 microns, as shown in Figure 8.
Attention must be corroded N type InP layer 9, was stopped at P type InP layer 8.
(6) with MOCVD extension p type InP covering (or claiming light limiting layer) 11 and p type heavy doping InGaAs electric contacting layer 12, as shown in Figure 9.
(7) heat deposition one deck SiO on sample p face
2Deielectric-coating 13 makes electrode pattern window 14 by lithography directly over active area, electrode pattern window width 6-8 micron, and p face electrode 15 is made in sputter, InP substrate thinning final vacuum evaporating n face electrode 16, as shown in Figure 10.
(8) the positive platform direction in edge is cleaved into the bar that comprises tube core (bar) of certain-length, again bar is cleaved into tube core, so far, finishes the making of device.
(9) the full structure of BH device of Figure 10 comprises substrate, resilient coating, lower waveguide layer; active layer, last ducting layer, intrinsic protective layer; have the reverse junction current barrier layer of current channel, covering or title light limiting layer and electric contacting layer, wherein the intrinsic protective layer in wavelength blue shift zone is etched away.
(10) table top that visible step (3) erodes away in the SEM photo of the full structure of BH device of Figure 11, the PN reverse junction current barrier layer 8,9 of step (4) growth, the current channel 10 that step (5) is left, the p face electrode 15 that the covering 11 of step (6) growth and electric contacting layer 12 and postorder are made etc.
(11) Figure 12 is the PL spectrum test result of the Multiple Quantum Well active structure of actual employing, and peak wavelength is near 1650nm, and half-peak value wavelength is respectively: 1615nm and 1675nm, full width at half maximum (FWHM) is 60nm.The PL spectrum peak wavelength maximum of making wafer (wafer) the material diverse location of device differs less than 10nm, and X-Ray test result display material has extraordinary crystal mass.
(12) Figure 13 and Figure 14 are respectively the place to go InP top layer (quantum well mixing district) and the sharp spectrum of penetrating of the laser tube core that goes out of place to go InP top layer (non-motley district) cleavage not in the above-mentioned example, and power output is all near 5mW.Figure 13 is visible because the QWI exercising result, the device excitation wavelength is near 1590nm, than material PL spectrum blue shift about 60nm, as seen Figure 14 is not subjected to the device excitation wavelength of QWI effect near 1652nm, consistent with the PL spectrum of material (though the excitation wavelength of Fabry-Perot Lip river (F-P) cavity laser is subjected to multiple factor affecting (as loss, temperature etc.), but the different cavity long tube core of diverse location cleavage differ for the excitation wavelength of different output power be no more than tens nm).The wavelength blue shift amount can be controlled by changing technological parameter.
(13) Figure 15 and Figure 16 are respectively the PI test results of the tube core that goes out of quantum well mixing district and non-motley district cleavage.Figure 15 hybrid region chamber length as can be known is the laser tube core of 370um, and the about 1590nm of wavelength, threshold current are near 8mA, and electric current power output when 80mA can reach 10mW.Figure 16 chamber, non-motley district length as can be known is the laser tube core of 280um, and the about 1648nm of wavelength, threshold current are near 6mA, and electric current power output when 100mA can reach 20mW.
(14) Figure 17 and Figure 18 are respectively the device internal quantum efficiency that simulates of the slope efficiency (can calculate external differential quantum efficiency) of the different cavity long tube core that goes out according to quantum well mixing district and non-motley district cleavage and the result of internal loss.Figure 17 internal quantum efficiency of hybrid region laser tube core as can be known is about 62.5%, and internal loss is about 12/cm.Figure 18 internal quantum efficiency of non-motley district laser tube core as can be known is about 83%, and internal loss is about 10/cm.Contrast as can be known, the laser of producing by the zone of quantum well mixing acquisition wavelength blue shift has still lower internal loss and acceptable internal quantum efficiency, this shows quality of materials behind the QWI not by severe exacerbation, thereby is applicable to and makes integrated electroabsorption modulator or than the passive low-loss optically waveguide of large band gap wavelength blue shift.Optimize technology and may obtain the better material characteristic.
(15) Figure 19 is that wavelength is that the epitaxial structure sheet of 1530nm is with the contrast of the spectrum of the PL before and after the buried heterostructure quantum well mixing, the SiO of common CVD growth
2Condition be 350 ℃, thickness 350nm, material PL spectrum peak wavelength moves on to 1492nm behind the QWI, blue shift amount is 38nm, the intensity of PL slightly weakens, half-breadth is increased to about 80nm from 65nm.Because Ga content is lower than the content of Ga in the top layer in the 1650nm example of front in this structure sheet top layer, thereby blue shift amount is less relatively.
Claims (6)
1. buried heterostructure semiconductor optical device manufacture method with wavelength blue shift effect, its step is as follows:
(1) adopts general chemistry vapour deposition growthing silica, produce the gallium room that is used for quantum well mixing an epitaxial structure sheet top layer selectivity;
(2) process of metallo-organic compound chemical vapor deposition epitaxial growth reverse junction impels the gallium room in quantum well mixing district to spread to quantum well region, realizes that quantum mixes and the band gap wavelength blue shift;
(3) the non-motley district is subjected to good protection in the whole process of quantum well mixing and band gap wavelength blue shift.
2. the buried heterostructure optical device manufacture method with wavelength blue shift effect according to claim 1, it is characterized in that, general chemistry vapour deposition growthing silica, produce the implementation method in the gallium room that is used for quantum well mixing an epitaxial structure sheet top layer selectivity, need the top layer in the quantum well mixing district of wavelength blue shift to adopt InGaAsP quaternary layer material, the condition of general chemistry vapour deposition growthing silica is: 350 ℃-400 ℃, and SiH
4: 0.6L/min, O
2: 1.3L/min, N
2: 4L/min, thickness is at 200nm-350nm.
3. the buried heterostructure optical device manufacture method with wavelength blue shift effect according to claim 1, it is characterized in that, metallo-organic compound chemical vapor deposition epitaxial growth reverse junction impels the gallium room in quantum well mixing district to spread to quantum well region, the realization quantum mixes the implementation process with the band gap wavelength blue shift, the temperature of growth reverse junction is arranged on 580 ℃-655 ℃, and growth time was at 0.5 hour-1.5 hours.
4. the buried heterostructure optical device manufacture method with wavelength blue shift effect according to claim 1; it is characterized in that; the non-motley district is subjected to good protection in the whole process of quantum well mixing; indium phosphorus floor is left on the surface in non-motley district; thickness surpasses 30nm, logical all the time five clan sources protection in the process of metallo-organic compound chemical vapor deposition epitaxial growth reverse junction.
5. the buried heterostructure optical device manufacture method with wavelength blue shift effect according to claim 1, it is characterized in that, need to leave current channel so that electric current is injected with the source region from electrode after comprising the reverse junction of having grown, the width of current channel is 1 micron-2 microns.
6. buried heterostructure semiconductor optical device with wavelength blue shift effect; its full structure comprises substrate; resilient coating; lower waveguide layer, active layer, last ducting layer; the intrinsic protective layer; have the reverse junction current barrier layer of current channel, covering or title light limiting layer and electric contacting layer, wherein the intrinsic protective layer in wavelength blue shift zone is etched away.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102916338A (en) * | 2012-10-10 | 2013-02-06 | 长春理工大学 | Simple method for increasing COD (chemical oxygen demand) threshold of semiconductor laser |
| CN104319613A (en) * | 2014-10-29 | 2015-01-28 | 中国科学院半导体研究所 | Bonding mode-locked laser with graphene as saturable absorber |
| CN109217108A (en) * | 2017-06-30 | 2019-01-15 | 中国科学院半导体研究所 | Utilize the method for impurity induced immingling technology production semiconductor laser |
| US11695093B2 (en) | 2018-11-21 | 2023-07-04 | Analog Devices, Inc. | Superlattice photodetector/light emitting diode |
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| JP2002185077A (en) * | 2000-12-14 | 2002-06-28 | Mitsubishi Electric Corp | Semiconductor laser and its manufacturing method |
| JP2005064080A (en) * | 2003-08-08 | 2005-03-10 | Furukawa Electric Co Ltd:The | Semiconductor element and its fabricating process |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102916338A (en) * | 2012-10-10 | 2013-02-06 | 长春理工大学 | Simple method for increasing COD (chemical oxygen demand) threshold of semiconductor laser |
| CN102916338B (en) * | 2012-10-10 | 2018-11-02 | 长春理工大学 | A method of making GaAs base semiconductor laser non-absorbing windows |
| CN104319613A (en) * | 2014-10-29 | 2015-01-28 | 中国科学院半导体研究所 | Bonding mode-locked laser with graphene as saturable absorber |
| CN109217108A (en) * | 2017-06-30 | 2019-01-15 | 中国科学院半导体研究所 | Utilize the method for impurity induced immingling technology production semiconductor laser |
| CN109217108B (en) * | 2017-06-30 | 2020-08-04 | 中国科学院半导体研究所 | Method for manufacturing semiconductor laser by impurity induced hybrid technology |
| US11695093B2 (en) | 2018-11-21 | 2023-07-04 | Analog Devices, Inc. | Superlattice photodetector/light emitting diode |
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