CN109217108A - Utilize the method for impurity induced immingling technology production semiconductor laser - Google Patents
Utilize the method for impurity induced immingling technology production semiconductor laser Download PDFInfo
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- CN109217108A CN109217108A CN201710530774.9A CN201710530774A CN109217108A CN 109217108 A CN109217108 A CN 109217108A CN 201710530774 A CN201710530774 A CN 201710530774A CN 109217108 A CN109217108 A CN 109217108A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
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- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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Abstract
The invention discloses a kind of methods using impurity induced immingling technology production semiconductor laser, comprising: prepares epitaxial wafer；Current injection area and non-current injection area are etched in extension on piece；Window region at front cavity surface is made by lithography in current injection area；One layer of copper is deposited at the front cavity surface on window region, as the metal film for promoting blue shift；One mask layer of growth regulation in current injection area, is covered in the top of copper, in non-two mask layer of current injection area growth regulation, and is made annealing treatment, and window region realizes quantum well mixing at front cavity surface；The first mask layer is etched away by photoetching, the second mask layer is retained, to provide current limit effect；And p side electrode and the face N electrode are successively made, complete the production of semiconductor laser.This method annealing temperature is low, and the use of exposure mask is effectively prevented the excessive of the V group elements such as arsenic, ensure that epitaxial wafer crystal quality with higher after annealing, and simple process, repeatability are high, time-consuming is short, at low cost, are conducive to produce in enormous quantities.
Description
Technical field
The disclosure belongs to semiconductor photoelectronic device field, is related to a kind of utilization impurity induced immingling technology production semiconductor
The method of laser.
Background technique
Semiconductor laser is since with high conversion efficiency, small in size, light-weight, the service life is long, high reliablity, can directly adjust
It makes, be easy to the features such as integrated with other semiconductor devices, in military affairs, industrial processes, accurate measurement, laser medicine, optic communication, light
The fields such as storage and laser printing obtain extensive and far-reaching application.
Semiconductor laser performance test and in actual use find, limit the master that its power further increases
Wanting factor is catastrophic optical damage damage (COD, Catastrophic Optical Degradation) at heat saturation and Cavity surface.And
As the new materials such as the heat sink structure design of high-termal conductivity solder, high cooling efficiency, more efficient water-cooling system, semiconductor swash
The raising of light device encapsulation technology, thermal saturation phenomenon have obtained significantly improving, this allows for COD and swashs as limitation semiconductor
Light device power is further promoted and the limited principal element of service life under high power.
At present in terms of improving semiconductor laser COD threshold power, used method is broadly divided into three categories: reducing
Optical power density, reduction non-radiative recombination rate at Cavity surface and the light absorption for reducing Cavity surface.Specific method includes large-optical-cavity
Epitaxial structure, vacuum cleavage plated film passivating cavity surface technology, vulcanizing treatment, corona treatment of super large optical cavity etc. are surface-treated skill
Art plates passivation layer, using non-aluminum active area, epitaxial regrowth, ultrashort laser pulse irradiation and quantum well mixing etc..
Thus in all multi-schemes for preparing semiconductor laser, it is urgently to be resolved to still remain following technical problem: technique
It is complicated, repeatability is low, time-consuming, cost of manufacture is high, is unfavorable for mass production etc..
Summary of the invention
(1) technical problems to be solved
Present disclose provides the methods using impurity induced immingling technology production semiconductor laser, at least partly to solve
Technical problem set forth above.
(2) technical solution
According to one aspect of the disclosure, it provides and a kind of utilizes impurity induced immingling technology production semiconductor laser
Method, comprising: prepare epitaxial wafer；Current injection area and non-current injection area are etched in extension on piece；In current injection area light
Carve window region at front cavity surface；One layer of copper 300 is deposited at the front cavity surface on window region, as the metal film for promoting blue shift；In electricity
One mask layer 410 of injection region growth regulation is flowed, the top of copper 300 is covered in, in non-two mask layer 420 of current injection area growth regulation,
And made annealing treatment, window region realizes quantum well mixing at front cavity surface；The first mask layer 410 is etched away by photoetching,
Second mask layer 420 is retained, to provide current limit effect；And p side electrode 510 and the face N electrode 520 are successively made,
Complete the production of semiconductor laser.
In some embodiments of the present disclosure, the first mask layer 410 and the second mask layer 420 are inhibition quantum well mixing
Deielectric-coating.
In some embodiments of the present disclosure, the growth pattern of the first mask layer 410 and the second mask layer 420 is plasma
Body enhances chemical vapour deposition technique PECVD；
In some embodiments of the present disclosure, the material of the first mask layer 410 is silica；Second mask layer 420
Material is one of following material: silica and silicon nitride；The thickness of first mask layer 410 and the second mask layer 420 is equal
Between 50nm~500nm.
In some embodiments of the present disclosure, the preparation of epitaxial wafer includes: the successively epitaxial growth buffer on substrate 101
102, lower limit layer 103, lower waveguide layer 104, Quantum well active district 105, upper ducting layer 106, upper limiting layer 107 and ohm connect
Contact layer 108 forms epitaxial wafer.
In some embodiments of the present disclosure, etching current injection area and non-current injection area in extension on piece includes:
It is performed etching at left and right sides of epitaxial wafer top layer, etches away ohmic contact layer 108 and part upper limiting layer 107, it is remaining
The upper limiting layer 107 of middle section and ohmic contact layer 108 disposed thereon are current injection area, the exposed upper limitation of two sides
Layer 107 is non-current injection area.
In some embodiments of the present disclosure, etch away the depth of ohmic contact layer 108 and part upper limiting layer 107 between
Between 200nm~1500nm, width is between 5 μm~200 μm, depending on the difference of required beam quality and output power size
It is fixed.
In some embodiments of the present disclosure, one layer of copper 300 of deposition includes: in entire extension on window region at the front cavity surface
On piece deposits one layer of copper 300, at current injection area makes front cavity surface by lithography during window region, in addition to window region at front cavity surface
Ohmic contact layer 108 is exposed, without except photoresist 200, remaining region is photo-etched the covering of glue 200；Then it is depositing
After copper 300, photoresist 200 of the window region with the copper lamina of exterior domain and under it at front cavity surface is removed.
It is magnetron sputtering method in the mode of extension on piece deposition copper 300 in some embodiments of the present disclosure；At front cavity surface
Window region is in the width on cavity length direction between 5nm~50nm；It is high-purity thin copper in the copper 300 of extension on piece deposition,
Thickness is between 2nm~20nm；Photoresist 200 is negtive photoresist.
In some embodiments of the present disclosure, the material of Quantum well active district 105 is one of following material: indium gallium
Arsenic/GaAs, Al-Ga-In-As/aluminum gallium arsenide, Al-Ga-In-As/gallium arsenic phosphide, gallium indium phosphorus/AlGaInP or Al-Ga-In-As/Al-Ga-In-As.
In some embodiments of the present disclosure, annealing is realized using RTA rapid thermal annealers, and annealing temperature T is full
Foot: 750 DEG C≤T≤850 DEG C, annealing time t meets: 60s≤t≤180s, the material of annealing time and annealing temperature view epitaxial wafer
Depending on the size of the different and required Quantum well active district blue shift amounts of material.
(3) beneficial effect
It can be seen from the above technical proposal that the utilization impurity induced immingling technology that the disclosure provides makes semiconductor laser
One of the method for device, at least have the advantages that:
1, the exposure mask using Cu as metal film and silica, silicon nitride for promoting blue shift etc. as inhibition blue shift,
Additional exposure mask is not needed at a lower temperature, so that it may masking processing be carried out to gain region, ensure that the quantum under this region
Trap is able to maintain the forbidden bandwidth after epitaxial growth, and a certain amount of Quantum Well wavelength blue shift then has occurred in the region for being covered with copper,
Blue shift effect is obtained, does not need the technologies such as secondary epitaxy, vacuum cleavage plated film passivating cavity surface, vulcanizing treatment, can obtain can
The blue shift effect of blue shift amount is seen, simple process, repeatability are high, time-consuming is short, at low cost, are conducive to produce in enormous quantities；
2,900 DEG C of thermal annealing technologies for just having obvious blue shift amount are up to relative to other, scheme disclosed by the invention can be with
Down to 750 DEG C at a temperature of realize blue shift, and the use of exposure mask is effectively prevented the excessive of the V group elements such as arsenic, ensure that and moves back
Epitaxial chip still keeps very high crystal quality after fire；
3, the method can be applied in the different forbidden bands of the needs such as multiple-wavelength laser, multi-wavelength integreted phontonics transmitting chip
The scene of width, the scope of application are wider.
Detailed description of the invention
Fig. 1 is the method flow for making semiconductor laser using impurity induced immingling technology according to the embodiment of the present disclosure
Figure.
Fig. 2A is the epitaxial structure of semiconductor laser chip to be made according to the embodiment of the present disclosure and after a photoetching
Three dimensional structure diagram.
Fig. 2 B is to make one fixed width bar-shaped zone by lithography in current injection area according to the embodiment of the present disclosure, is formed at front cavity surface
The three dimensional structure diagram of window region.
Fig. 2 C is the three dimensional structure diagram for depositing thin copper layer on entire epitaxial wafer according to the embodiment of the present disclosure.
Fig. 2 D is according to thin copper layer and its lower light other than window region at embodiment of the present disclosure Lift-off method removal front cavity surface
The three dimensional structure diagram of photoresist.
Fig. 2 E is according to the embodiment of the present disclosure in one mask layer of current injection area growth regulation, in non-current injection area growth regulation
The three dimensional structure diagram of two mask layers.
Fig. 2 F is according to the three-dimensional structure that the first mask layer was etched away and completed N by the embodiment of the present disclosure, p side electrode makes
Schematic diagram.
Fig. 3 is to make 915nm semiconductor laser chip window region Quantum Well before and after annealing according to the embodiment of the present disclosure
Active area PL composes test chart.
Fig. 4 is to make 975nm semiconductor laser chip window region Quantum Well before and after annealing according to the embodiment of the present disclosure
Active area PL composes test chart.
[symbol description]
101- substrate；102- buffer layer；
103- lower limit layer；104- lower waveguide layer；
105- Quantum well active district；The upper ducting layer of 106-；
107- upper limiting layer；108- ohmic contact layer；
200- photoresist；
300- copper；
The first mask layer of 410-；The second mask layer of 420-；
The face 510-P electrode；The face 520-N electrode.
Specific embodiment
The life of copper and deielectric-coating is added using the method for impurity induced immingling technology production semiconductor laser in the disclosure
It is long, and rapid thermal annealing is carried out at high temperature, without secondary epitaxy, vacuum cleavage plated film passivating cavity surface, vulcanizing treatment etc.
Technology, it can obtain the blue shift effect of considerable blue shift amount, simple process, repeatability are high, time-consuming is short, at low cost, it is large quantities of to be conducive to
Amount production.
For the purposes, technical schemes and advantages of the disclosure are more clearly understood, below in conjunction with specific embodiment, and reference
Attached drawing is described in further detail the disclosure.
Quantum well mixing refers to after epitaxial growth, some with promotion and suppression by selectively growing in extension on piece
Blue shift processed effect deielectric-coating (different media act on different, some can promote blue shift, some inhibition blue shifts) and exposure mask (as
Protective film is able to suppress blue shift), the rta technique of specific time is then carried out at a certain temperature, so that in extension
The selected region of piece, quantum-well materials band gap have occurred a degree of blue shift, and still to retain its original in unselected region
Band gap is constant.Its essence is the counterdiffusion of hetero-junctions constituent atoms caused by point defect inside semiconductor.
Specific to semiconductor laser, can by photoetching process respectively at Cavity surface window region (Window Region) and
Gain region (Active Region) grows deielectric-coating (the certain thickness SiO for promoting blue shift respectively2、SiO2-Cu、Cu、HfO2
Deng) and inhibit blue shift exposure mask (Si3N4、TiO2、SrF2、P-SiO2), then by the rta technique of quantum well mixing, just
It can make window region quantum-well materials that blue shift occur, and gain region quantum-well materials band gap remains unchanged.
The disclosure uses Cu as the metal film for promoting blue shift, is based on considered below: Cu is a kind of 3d transition group gold
Belong to, there is high diffusion coefficient in AlGaAs material system.After the rta technique by lower temperature, Cu atom
Diffusible to enter in Quantum Well, with trap, barrier material In/Ga or In/Ga/Al generation traction or resonant impact, substantially reduce
Activation energy needed for counterdiffusion, greatly enhances trap, barrier material component counterdiffusion degree.Accordingly, with respect to SiO2、HfO2Deng rush
Into the deielectric-coating of blue shift, the Cu of sputtering can play considerable blue shift effect at lower temperatures.On the one hand, annealing temperature
Reduction, annealing time reduction, protection epitaxial wafer surface topography and crystal matter is more advantageous to while guaranteeing blue shift effect
Amount, so that its electro-optical characteristic is by lesser damage；On the other hand, have due to epitaxial material itself at 800 DEG C or less certain
Stability, silica, silicon nitride etc. as inhibit blue shift exposure mask, additional cover is not needed under lower annealing temperature
Film does not need the region of blue shift to protect, to simplify the manufacture craft of chip of laser, improves yield rate.
In first exemplary embodiment of the disclosure, a kind of utilization impurity induced immingling technology production is provided
The method that 915nm separation limits asymmetric large-optical-cavity semiconductor laser.Fig. 1 is to utilize impurity induced according to the embodiment of the present disclosure
The method flow diagram of immingling technology production semiconductor laser；Fig. 2A to Fig. 2 F is to make semiconductor according to the embodiment of the present disclosure to swash
Light device chip implements corresponding three dimensional structure diagram after each step.A to Fig. 2 F referring to Figures 1 and 2, it is a kind of to be lured using impurity
The method for leading immingling technology production semiconductor laser, comprising:
Step S102: on substrate 101 successively epitaxial growth buffer 102, lower limit layer 103, lower waveguide layer 104, amount
Sub- trap active area 105, upper ducting layer 106, upper limiting layer 107 and ohmic contact layer 108 form epitaxial wafer；
In the present embodiment, the material of substrate 101 is N-type GaAs, doping concentration are as follows: 1*1018cm-3；
In the present embodiment, the material of buffer layer 102 is N-type GaAs, doping concentration 2*1018cm-3, with a thickness of
200nm；
In the present embodiment, the material of lower limit layer 103 is N-type aluminum gallium arsenide, doping concentration 1*1018cm-3, with a thickness of
1.5μm；
In the present embodiment, the material of lower waveguide layer 104 is the aluminum gallium arsenide of unintentional doping, with a thickness of 700nm；
The material of Quantum well active district 105 can be one of following material: indium gallium arsenic/GaAs, Al-Ga-In-As/aluminium
Gallium arsenic, Al-Ga-In-As/gallium arsenic phosphide, gallium indium phosphorus/AlGaInP, Al-Ga-In-As/Al-Ga-In-As；In the present embodiment, Quantum Well is active
The material in area 105 is Al-Ga-In-As/aluminum gallium arsenide, with a thickness of 7nm；
In the present embodiment, the material of upper ducting layer 106 is the aluminum gallium arsenide of unintentional doping, with a thickness of 400nm；
The doping concentration of the aluminum gallium arsenide of unintentional doping is less than 1 × 10 in the present embodiment16cm-3, usually 1 × 1015cm-3
Magnitude, unintentional doping meaning herein indicates that its doping concentration is independently to generate during Material growth, is not
It is realized by ion implanting or the means of other doping, but the present invention is not limited thereto, as long as other approach meet phase
It closes doping concentration and also complies with requirement；
In the present embodiment, the material of upper limiting layer 107 is p-type aluminum gallium arsenide, doping concentration 2*1018cm-3, with a thickness of
1.3μm；
In the present embodiment, the material of ohmic contact layer 108 is p-type GaAs, doping concentration 1*1020cm-3, thickness
For 200nm；
It should be noted that substrate 101 listed above, buffer layer 102, lower limit layer 103, lower waveguide layer 104, upper ripple
The doping concentration of the material of conducting shell 106, upper limiting layer 107 and ohmic contact layer 108 is to illustrate, it is not limited to more than
Doping concentration, and the material and thickness selected are also not limited to this, need to carry out flexibly according to experiment in actual experiment
Variation.
Step S104: performing etching at left and right sides of epitaxial wafer top layer, etches away on ohmic contact layer 108 and part
Limiting layer 107, the upper limiting layer 107 of remaining middle section and ohmic contact layer 108 disposed thereon be current injection area, two
The exposed upper limiting layer 107 of side is non-current injection area；
Depending on the difference of current injection area beam quality needed for and output power size, is performed etching, gone using photoetching
Fall the depth of non-current injection area between 200nm~1500nm, width is between 5 μm to 200 μm；On in the present embodiment
The etching depth of limiting layer 107 is 300nm, and Fig. 2A is the epitaxy junction that semiconductor laser chip is made according to the embodiment of the present disclosure
Structure and the three dimensional structure diagram after a photoetching, as shown in Figure 2 A, the upper limiting layer of remaining middle section after etching
107 and ohmic contact layer 108 disposed thereon be current injection area；The exposed upper limiting layer 107 of two sides is the injection of non-electrical stream
Area；
Step S106: making window region at front cavity surface by lithography in the current injection area of bar shaped, is sunk at the front cavity surface on window region
One layer of copper 300 of product；
The step can be divided into following sub-step:
Sub-step S106A: making the bar-shaped zone of one fixed width by lithography in current injection area, form window region at front cavity surface,
Window region exposes ohmic contact layer 108 at front cavity surface, remaining region is photo-etched the covering of glue 200；
The bar-shaped zone being lithographically formed is window region at front cavity surface, and the width on cavity length direction (i.e. front-rear direction) is situated between
Between 5nm~50nm；In the present embodiment, window region makes 100 μm of bar-shaped zone by lithography at front cavity surface, rectangular in chamber
Upward width is 20nm；Fig. 2 B is to make one fixed width bar-shaped zone, shape by lithography in current injection area according to the embodiment of the present disclosure
It, as shown in Figure 2 B, will by techniques such as the spin coatings, exposure, development of photoetching at the three dimensional structure diagram of window region at front cavity surface
The photoresist 200 of the bar-shaped zone part of one fixed width removes, and exposes ohmic contact layer 108, forms window region at front cavity surface,
Remaining region is photo-etched the covering of glue 200；
Step S106B: depositing one layer of copper 300 on entire epitaxial wafer, and removes at front cavity surface window region with exterior domain
Copper lamina and the photoresist 200 under it；
The copper 300 deposited on entire epitaxial wafer is high-purity thin copper, and thickness is between 2nm~20nm, in the present embodiment
In, copper 300 with a thickness of 5nm；Photoresist 200 is using negtive photoresist；Window region is at removal front cavity surface with the copper lamina of exterior domain
And the mode of the photoresist 200 under it is Lift-off method；Fig. 2 C is to be sunk on entire epitaxial wafer according to the embodiment of the present disclosure
The three dimensional structure diagram of product thin copper layer continues to deposit one layer of copper 300 in extension on piece, the method for deposition can as shown in Figure 2 C
Method to use magnetron sputtering method, but it is not limited to this, other conventional formulation techniques of this field can also be used；Fig. 2 D is
According to the three-dimensional structure of thin copper layer and its lower photoresist other than window region at embodiment of the present disclosure Lift-off method removal front cavity surface
Schematic diagram, the meaning of Lift-off are as follows: the removing of Cu is peeled off together with photoresist, in actual application, can also be used
Other modes remove at front cavity surface thin copper layer and its lower photoresist other than window region, are not limited to the Lift-off that the disclosure is mentioned
Method；As shown in Figure 2 D, after peeling off layers of copper 300 and photoresist 200, current injection area is by the copper positioned at front cavity surface window region
Layer and the ohmic contact layer 108 under layers of copper and the upper limiting layer of the middle section under ohmic contact layer 108
107 are constituted, and non-current injection area exposes；
Step S108: one mask layer 410 of growth regulation in current injection area, in non-two mask layer of current injection area growth regulation
420, and made annealing treatment, window region realizes quantum well mixing at front cavity surface；
First mask layer 410 and the second mask layer 420 are used as protective layer, inhibit quantum well mixing, to inhibit blue shift；The
The growth pattern of one mask layer 410 and the second mask layer 420 is plasma enhanced chemical vapor deposition method PECVD, and first covers
The material of film layer 410 is silica, and the material of the second mask layer 420 is selected from one of silica and silicon nitride, thick
Degree is between 50nm~500nm；The material of the first mask layer 410 and the second mask layer 420 is silica in the present embodiment,
Thickness is 300nm；One mask layer 410 of growth regulation in current injection area, in non-two mask layer 420 of current injection area growth regulation
Three dimensional structure diagram is as shown in Figure 2 E；
It is worth noting that, inhibiting the deielectric-coating of quantum well mixing other than silica and silicon nitride, further includes: two
Titanium oxide TiO2And strontium fluoride SrF2Deng being not limited to the material enumerated in the present embodiment.
Annealing realizes that between 750 DEG C~850 DEG C, annealing time is situated between annealing temperature using RTA rapid thermal annealers
Between 60s~180s, the different and required Quantum well active district blue shift amounts of annealing time and annealing temperature view epitaxial material
Size depending on；According to required blue shift amount in the present embodiment, determine that annealing parameter is as follows: annealing temperature is 810 DEG C, annealing time
For 60s, Annealing Protection atmosphere is high pure nitrogen, and covers the gallium arsenide substrate of a piece of cleaning as cover plate on epitaxial wafer surface,
Cover plate polishing is bonded epitaxial wafer down and completely, to prevent possible V group element in rapid thermal annealing process to be precipitated；It is annealing
In the process, Cu atom is diffusible enters in Quantum Well, with the In/Ga or In/Ga/Al generation traction or resonance in trap, barrier material
Collision, greatly reduces activation energy needed for counterdiffusion, greatly enhances trap, barrier material component counterdiffusion degree.
Step S110: the first mask layer 410 is etched away by photoetching, the second mask layer 420 is retained, to provide electric current
Restriction effect；
Step S112: p side electrode 510 and the face N electrode 520 are successively made, the production of semiconductor laser chip is completed；
In the present embodiment, p side electrode 510 is using the titanium/platinum/gold stacked gradually；The use of the face N electrode 520 stacks gradually
Gold/germanium/nickel；P side electrode 510 is made by the way of magnetron sputtering, the face N electrode 520 using be evaporated in vacuo by the way of into
Row production；First mask layer is etched away to and is completed three dimensional structure diagram that p side electrode 510 and the face N electrode 520 make such as
Shown in Fig. 2 F；
It further include common technology in this step, comprising: to 101 grinding and polishing attenuated polishing of the face N substrate, pairing annealing of gold, the face N electricity
The techniques such as thick gold, cavity surface film coating, chip cleavage packaging and testing are plated to be not described herein due to being not belonging to innovative point of the invention.
The 915nm separation prepared according to the method described above limits asymmetric large-optical-cavity semiconductor laser and has carried out performance
Test, Fig. 3 are active according to embodiment of the present disclosure production 915nm semiconductor laser chip window region Quantum Well before and after annealing
Area PL composes test chart, as shown in figure 3, spectral peak of the window region Quantum well active district PL spectrum before annealing is composed after 894.3nm, annealing
Peak is 834.3nm, and the blue shift amount after annealing is 99.72meV, and blue shift effect is obvious.
In second exemplary embodiment of the disclosure, the impurity induced immingling technology production using the disclosure is provided
The method that 975nm separation limits asymmetric large-optical-cavity semiconductor laser.
For the present embodiment compared with first embodiment, difference is lower waveguide layer 104, Quantum well active district 105 and upper waveguide
The material and thickness of layer 106 are different, etched in subsequent preparation process window region at front cavity surface size it is different and into
The annealing process of row high-temperature quick thermal annealing is different；The parameter that the present embodiment is different from the first embodiment below is introduced,
Other same preparation method and technological parameter does not repeat here；
In the present embodiment, the material of lower waveguide layer 104 is similarly the aluminum gallium arsenide of unintentional doping, with a thickness of 900nm；
In the present embodiment, the material of Quantum well active district 105 are as follows: indium gallium arsenide/potassium arsenic aluminate, with a thickness of 9nm；
In the present embodiment, the material of upper ducting layer 106 is similarly the aluminum gallium arsenide of unintentional doping, with a thickness of 500nm；
In the present embodiment, window region makes 100 μm of bar-shaped zone, the width on cavity length direction by lithography at front cavity surface
It is similarly 20nm；
In the present embodiment, determine that annealing parameter is as follows according to required blue shift amount: annealing temperature is 810 DEG C, and annealing time is
90s。
The 975nm separation prepared according to the method described above limits asymmetric large-optical-cavity semiconductor laser and has carried out performance
Test, Fig. 3 are active according to embodiment of the present disclosure production 975nm semiconductor laser chip window region Quantum Well before and after annealing
Area PL composes test chart, as shown in figure 4, spectral peak of the window region Quantum well active district PL spectrum before annealing is composed after 955.9nm, annealing
Peak is 891.3nm, and the blue shift amount after annealing is 94meV, and blue shift effect is obvious.
It should be noted that being not only applicable to make using the method for impurity induced immingling technology production semiconductor laser
Make semiconductor laser, can be applied in multiple-wavelength laser, multi-wavelength integreted phontonics transmitting chip etc. and need different forbidden bands
The scene of width, the scope of application are wider.
In conclusion the embodiment of the present disclosure provides and a kind of utilizes impurity induced immingling technology production semiconductor laser
Method, the exposure mask using Cu as the metal film and silica, silicon nitride etc. for promoting blue shift as inhibition blue shift, compared with
Additional exposure mask is not needed under low temperature, so that it may masking processing be carried out to gain region, ensure that the Quantum Well energy under this region
The forbidden bandwidth after epitaxial growth is enough kept, a certain amount of Quantum Well wavelength blue shift then has occurred in the region for being covered with copper, obtains
Blue shift effect does not need the technologies such as secondary epitaxy, vacuum cleavage plated film passivating cavity surface, vulcanizing treatment, can obtain considerable indigo plant
The blue shift effect of shifting amount, simple process, repeatability are high, time-consuming is short, at low cost, are conducive to produce in enormous quantities；And relative to other
The up to 900 DEG C thermal annealing technologies for just having an obvious blue shift amount, scheme disclosed by the invention can down to 750 DEG C at a temperature of it is real
Existing blue shift, and the use of exposure mask is effectively prevented the excessive of the V group elements such as arsenic, epitaxial chip still keeps very high after ensure that annealing
Crystal quality.
It should also be noted that, can provide the demonstration of the parameter comprising particular value herein, but these parameters are without definite etc.
In corresponding value, but analog value can be similar in acceptable error margin or design constraint.The side mentioned in embodiment
It is only the direction with reference to attached drawing to term, such as "upper", "lower", "front", "rear", "left", "right" etc., is not used to limit this
Disclosed protection scope.In addition, unless specifically described or the step of must sequentially occur, the sequences of above-mentioned steps there is no restriction in
It is listed above, and can change or rearrange according to required design.And above-described embodiment can be based on design and reliability
Consider, the collocation that is mixed with each other is used using or with other embodiments mix and match, i.e., the technical characteristic in different embodiments can be with
Freely form more embodiments.
It is all to be used in specification and claim the content for indicating composition, reaction condition etc. unless there are specified
Number, it is thus understood that be to be modified by the term of " about " in all situations.Therefore, unless being known as mutually otherwise anticipating, this theory
Numerical parameter in bright book and appended claims is approximation, can according to by content of this disclosure it is resulting needed for characteristic
Change.
The disclosure is limited it should be noted that above-described embodiment illustrates rather than the disclosure, and ability
Field technique personnel can be designed alternative embodiment without departing from the scope of the appended claims.In the claims,
Any reference symbol between parentheses should not be configured to limitations on claims.Word " comprising " does not exclude the presence of not
Element or step listed in the claims.Word "a" or "an" located in front of the element does not exclude the presence of multiple such
Element.
It should be noted that running through attached drawing, identical element is indicated by same or similar appended drawing reference.In above description
In, some specific embodiments are used for description purposes only, and should not be construed has an any restrictions to the disclosure, and the only disclosure
The example of embodiment.When may cause understanding of this disclosure and cause to obscure, conventional structure or construction will be omitted.It should be noted that
The shape and size of each component do not reflect actual size and ratio in figure, and only illustrate the content of the embodiment of the present disclosure.
Particular embodiments described above has carried out further in detail the purpose of the disclosure, technical scheme and beneficial effects
Describe in detail it is bright, it is all it should be understood that be not limited to the disclosure the foregoing is merely the specific embodiment of the disclosure
Within the spirit and principle of the disclosure, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the disclosure
Within the scope of shield.
Claims (10)
1. a kind of method using impurity induced immingling technology production semiconductor laser, comprising:
Prepare epitaxial wafer；
Current injection area and non-current injection area are etched in extension on piece；
Window region at front cavity surface is made by lithography in current injection area；
One layer of copper (300) is deposited at the front cavity surface on window region, as the metal film for promoting blue shift；
In current injection area, one mask layer of growth regulation (410), is covered in the top of copper (300), in non-current injection area growth regulation
Two mask layers (420), and made annealing treatment, window region realizes quantum well mixing at front cavity surface；
The first mask layer (410) is etched away by photoetching, the second mask layer (420) are retained, to provide current limit effect；
And
P side electrode (510) and the face N electrode (520) are successively made, the production of semiconductor laser is completed.
2. according to the method described in claim 1, wherein, first mask layer (410) and the second mask layer (420) are suppression
The deielectric-coating of quantum well mixing processed.
3. according to the method described in claim 2, wherein,
The growth pattern of first mask layer (410) and the second mask layer (420) is plasma enhanced chemical vapor deposition
Method PECVD；
The material of first mask layer (410) is silica；
The material of second mask layer (420) is one of following material: silica and silicon nitride；
The thickness of first mask layer (410) and the second mask layer (420) is between 50nm~500nm.
4. according to the method described in claim 1, wherein, the preparation of the epitaxial wafer includes:
Successively epitaxial growth buffer (102), lower limit layer (103), lower waveguide layer (104), Quantum Well have on substrate (101)
Source region (105), upper ducting layer (106), upper limiting layer (107) and ohmic contact layer (108) form epitaxial wafer.
5. described to etch current injection area and the injection of non-electrical stream in extension on piece according to the method described in claim 4, wherein
Area includes:
It is performed etching at left and right sides of epitaxial wafer top layer, etches away ohmic contact layer (108) and part upper limiting layer
(107), the upper limiting layer (107) and ohmic contact layer disposed thereon (108) of remaining middle section be current injection area, two
The exposed upper limiting layer (107) of side is non-current injection area.
6. described to etch away ohmic contact layer (108) and part upper limiting layer according to the method described in claim 5, wherein
(107) depth is between 200nm~1500nm, and width is between 5 μm~200 μm, the beam quality depending on needed for and output
Depending on the difference of watt level.
7. according to the method described in claim 5, wherein, described one layer of copper (300) of deposition includes: on window region at front cavity surface
One layer of copper (300) is deposited on entire epitaxial wafer, in the mistake for making window region at front cavity surface by lithography in current injection area
Cheng Zhong is free of except photoresist (200), remaining region quilt in addition to window region exposes ohmic contact layer (108) at front cavity surface
Photoresist (200) covering；Then after having deposited copper (300), remove front cavity surface at window region with the copper lamina of exterior domain with
Photoresist (200) under and its.
8. according to the method described in claim 7, wherein,
The mode in extension on piece deposition copper (300) is magnetron sputtering method；
Window region is in the width on cavity length direction between 5nm~50nm at the front cavity surface；
The copper (300) in extension on piece deposition is high-purity thin copper, and thickness is between 2nm~20nm；
The photoresist (200) is negtive photoresist.
9. method according to any one of claims 1 to 8, wherein the material of the Quantum well active district (105) is following
One of material: indium gallium arsenic/GaAs, Al-Ga-In-As/aluminum gallium arsenide, Al-Ga-In-As/gallium arsenic phosphide, gallium indium phosphorus/AlGaInP or
Al-Ga-In-As/Al-Ga-In-As.
10. being moved back according to the method described in claim 9, wherein, the annealing is realized using RTA rapid thermal annealers
Fiery temperature T meets: 750 DEG C≤T≤850 DEG C, annealing time t meets: 60s≤t≤180s, the annealing time and annealing temperature
Depending on the size of the different and required Quantum well active district blue shift amounts of the material of the epitaxial wafer.
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