CN1877935A - Laser COD eliminating method suitable for mass production - Google Patents
Laser COD eliminating method suitable for mass production Download PDFInfo
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- CN1877935A CN1877935A CN 200510011897 CN200510011897A CN1877935A CN 1877935 A CN1877935 A CN 1877935A CN 200510011897 CN200510011897 CN 200510011897 CN 200510011897 A CN200510011897 A CN 200510011897A CN 1877935 A CN1877935 A CN 1877935A
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Abstract
The invention discloses a COD eliminating method of laser and optical non-absorbing window making technology, which is characterized by the following: diffusing zinc atom in the diffusion induced III group element or V group element of III-V group semiconductor compound through quantum confounding elementary; providing new zinc-expanding method; fitting for large-power semiconductor laser; improving optical output power obviously.
Description
Technical field
The present invention relates to the semiconductor device fabrication process technical field, particularly a kind of method of the elimination laser COD that is suitable for producing in enormous quantities.
Background technology
Later stage in 1962, first GaAs homojunction semiconductor laser succeeded in developing; Make single heterojunction laser with liquid phase epitaxial method in 1967, and realized continuous operation under the semiconductor laser room temperature; After 1970, semiconductor laser has obtained the development of advancing by leaps and bounds.Development along with metallo-organic compound chemical vapour deposition (CVD) (MOCVD) and molecular beam epitaxy (MBE) homepitaxy technology, can grow the superthin layer of atomic size magnitude, semiconductor laser structure obtains constantly improving development: laser structure commonly used at present is the double heterojunction quantum-well laser.
Because the appearance of double heterojunction quantum well structure, the characteristic of semiconductor laser obtains omnibearing improvement: lower threshold current and operating current, better temperature characterisitic, longer life-span, especially higher optical output power.Simultaneously, the requirement of practical application noise spectra of semiconductor lasers is also improving constantly, except that requiring lower power consumption, longer life-span, better the temperature characterisitic, also requiring bigger optical output power, from tens milliwatts to several hectowatts, even several kilowatts.Bigger optical output power noise spectra of semiconductor lasers chamber face is an acid test, because its lighting area is little, the chamber face will bear very large optical power density.For example, DVDRAM is with high-power 650nm AlGaInP (AlGaInP) semi-conducting material laser, and its imprinting work luminous power reaches 50 milliwatts, and bright dipping concentrates on the area that is about 1 square micron, and optical power density is 5 * 10
4W/cm
2So big optical power density is easy to damage laser cavity surface, makes the chamber face produce irreversible physical injury, i.e. light catastrophe damage, and english abbreviation is Catastrophic Optical Damage (COD).
Light catastrophe damage, mainly highdensity luminous power causes in the strong light absorption at laser cavity surface place.It is generally acknowledged that this absorption is because near surface recombination center the cleavage surface and the carrier depletion of following with it cause, because the heat that this absorption produces makes that near the temperature rise the face of chamber is higher, if temperature rise reaches the breaking-up that the fusing point of semi-conducting material will cause the chamber face.What COD caused device is a kind of expendable destructive behavior, though can not eliminate this factor fully, can take technology to improve the COD power level of device.The technology of using in producing in batches at present is to plate one deck optical thin film, i.e. cavity surface film coating at laser cavity surface.Semiconductor laser especially contains the laser of aluminium, and chamber face oxidation is the principal element that causes laser fails, therefore will prevent as much as possible that the chamber face is exposed in the air.Cavity surface film coating, though the oxidation of laser cavity surface is restricted, make laser optical power output higher than plated film not, but because the existence of interfacial state also can produce non-radiative compound between rete and laser material, simultaneously under high power density, very high-octane at the interface release can be quickened the diffusion of defective at the interface, thereby is not too obvious to the raising of the optical power threshold that produces COD, and the COD phenomenon still obviously exists.In addition, the method that improves the optical power threshold of COD generation also has: large-optical-cavity structure, conical cavity structure, be with no injection region window structure, chamber surface chemistry passivation etc., but these methods all can not significantly improve the optical power threshold that COD produces; And because its corresponding manufacture craft is not suitable for industrialized mass production.
The appearance of semiconductor photoelectric device as everyone knows,---semiconductor laser has brought unprecedented change for our modern life and industrial production; Along with civilian and military supplies application and development requirement, increasing to the demand of high power semiconductor lasers.Clearly, high power semiconductor lasers is made the COD removing method that is sought after a kind of economical and practical quick, suitable mass production.
The present invention is a kind of manufacture method of smooth non-absorbing window, and in conjunction with the quantum well mixed principle, the method for utilizing the zinc impurity diffusion to induce realizes quantum well mixing.Among the present invention, the making in zinc source and the diffusion of zinc impurity be in specific reacting furnace a step finish, this method economy, simple and direct, be suitable for large batch of laser industrial production, and make laser output power obtain significant raising.
Summary of the invention
The object of the present invention is to provide a kind of process that can significantly improve semiconductor laser COD threshold value, promptly in conjunction with the quantum well mixed principle, utilize constant source zinc impurity diffusion method to induce quantum well mixing, make the light non-absorbing window at films on cavity surfaces of semiconductor lasers.One step of diffusion of the making in diffusion zinc source and zinc impurity finishes among the present invention, and economical convenient, the sheet that is suitable for laser is produced in batches.
For achieving the above object, the invention still further relates to dual-purpose micro metal organic chemical vapor deposition (MOCVD) equipment that is used for zinc oxide material growth and zinc impurity diffusion.Utilize this MOCVD equipment at first to finish diffusion zinc source---the growth of zinc-oxide film under the low temperature, control suitable temperature then and carry out zinc impurity diffusion realization quantum well mixing, finish the making of light non-absorbing window.Zinc-oxide film growth of the present invention and zinc impurity diffusion temperature are all lower, so the making of light non-absorbing window is almost very little to established semiconductor laser structure influence; And can once put into a plurality of complete laser epitaxial wafers in the reative cell of MOCVD equipment, be fit to produce in batches.
Its final diffusion effect had both been realized mixing of quantum well as shown in Figure 1, and suitable blue shift phenomenon appears in the quantum well region of zinc diffusion, does not influence the character of laser again.
The quantum well region of quantum well semiconductor laser device is deeply buried in P type covering and below the contact electrode layer, generally is about 1～2 micron apart from the top layer.In order to realize that effectively zinc atom diffuses into quantum well region and causes quantum well mixing, do not change the quality of materials of each layer of laser structure and then influence laser performance simultaneously, it is crucial selecting suitable expansion zinc method.The present invention selects the constant source open pipe to expand the zinc method, and this method is divided into two steps: the making in zinc source and the diffusion of zinc impurity.Zinc source---Zinc oxide film material growth source is selected diethyl zinc and deionized water, and growth temperature is very low, is generally 120～300 ℃; The factor that the zinc diffusion conditions may influence laser performance is a temperature, and selecting temperature among the present invention is 500～600 ℃, reasonably controls the negative effect that can farthest reduce diffusion time laser.
The making of light non-absorbing window is realized by the quantum well mixing effect.The material and the material component of the pairing making quantum well of the quantum well semiconductor laser device of different wave length are different, for example the quantum well of gallium aluminium arsenic (base)/GaAs (trap), AlGaInP (base)/gallium indium phosphorus III-V families such as (traps) semiconducting compound formation.The trace of III family element or V group element component changes, and will cause the grow up variation of amplitude of quantum well outgoing wave.Utilize the active physical property of zinc atom, rely on the diffusion of zinc atom in compound semiconductor material, produce corresponding calking and vacancy defect, induce III family or the semiconductor element phase counterdiffusion of V family, the material component at trap and base in the change quantum well region, the variation of component causes the change of quantum well band structure, and then changes the excitation wavelength of quantum well.For example, gallium aluminium arsenic (base)/GaAs (trap), AlGaInP (base)/gallium indium phosphorus quantum well structures such as (traps), the effect of quantum well mixing is that III family element aluminum, gallium take place to expand mutually in trap and the base, its result makes the energy gap of well region become big, the quantum well excitation wavelength shortens, and the blue shift phenomenon both occurred.Because the quantum well region that has taken place to mix has the energy gap of broad, the relatively long laser that laser is produced does not almost have absorbability, promptly forms so-called smooth non-absorbing window.
Technical scheme
A kind of laser COD eliminating method that is suitable for producing in enormous quantities, its concrete implementing process characteristics are:
According to the quantum well mixing principle, utilize the diffusion of zinc atom at III-V family semiconducting compound, induce III family element or V group element to expand mutually, thereby produce the quantum well mixing phenomenon;
Diffusion method is constant source open pipe diffusion zinc method, wherein zinc source---the making of zinc oxide and the diffusion of zinc are to finish in a step, and processing step is comparatively saved, and is fit to produce in enormous quantities.
The laser COD eliminating method that is suitable for producing in enormous quantities, its thought source are according to the quantum well mixing principle, utilize the diffusion of zinc atom to quicken quantum well mixing, realize the making of non-absorbing window.
Expanding the zinc method is that the constant source open pipe expands the zinc method.
The making of zinc source---zinc oxide is made of the metal-organic chemical vapor deposition equipment technology growth, growth source diethyl zinc and deionized water, and temperature is at 120～300 ℃.
The diffusion temperature of zinc will be strict controlled in 500～600 ℃, and diffusion depth is in N type covering 13.
The constant source open pipe expands the zinc method, promptly be with solid oxide zinc film as expanding the zinc source, under the nitrogen of certain pressure intensity or argon gas atmosphere, carry out the zinc diffusion.
Application of the present invention can significantly improve the ability to bear of films on cavity surfaces of semiconductor lasers optical power density, significantly improves optical output power.
Description of drawings
Fig. 1 is the conventional laser device structural representation that has the light non-absorbing window
Fig. 2 is that the quantum well mixing schematic diagram is induced in the diffusion of selectivity zinc
The meaning of number among the figure:
11, growing semiconductor laser structure N type semiconductor substrate (GaAs, indium phosphide); 12, the material grown buffer layer of laser epitaxial structure; 13, N type covering; 14, laser active area (containing the quantum well region); 15, P type covering; 16, contact electrode layer; 17, p side electrode; 18, N face electrode; 19, the zinc diffusion region; 21, solid zinc source---zinc oxide film; 22, diffusion impervious layer---silicon oxynitride layer.
Embodiment
Below in conjunction with the concrete technical matters of accompanying drawing detailed description according to a kind of laser COD eliminating method that is suitable for producing in enormous quantities of the specific embodiment of the invention.
The present invention optionally carries out quantum well mixing on the epitaxial growth of semiconductor material sheet of making laser, its reality is simple to operate, and processing step is as follows, please consults Fig. 2 in detail:
(1), the making in solid zinc source
Etch away at first at the silicon oxynitride layer 22 of making growth one deck densification on the epitaxial growth of semiconductor material sheet of laser, and the silicon oxynitride layer of laser end face, etching solution is a buffered hydrofluoric acid solution, and this etching solution does not almost influence the laser surface.Then, growth one deck zinc oxide film 21 on the contact electrode layer 16 of silicon oxynitride layer 22 and semiconductor laser, growth temperature is 120～300 ℃.
(2), the diffusion of zinc impurity
After solid zinc source completed, the epitaxial growth of semiconductor material sheet directly was heated to 500～600 ℃ in reative cell, did not wait in 40 minutes, 60 minutes, 80 minutes according to different needs diffusions.The zinc atom diffusion depth will be passed through contact electrode layer 16, P type covering 15, laser active area (containing the quantum well region) 14, has just reached N type covering 13, and N type covering 13 can not be expanded in the diffusion front of zinc.
(3), other aftertreatment technologys
After finishing zinc diffusion and inducing quantum well mixing technology, float deoxidation zinc layer 21 and silicon oxynitride layer 22 respectively with hydrochloride buffer, buffered hydrofluoric acid solution priority.After this, the epitaxial growth of semiconductor material sheet can carry out the back technology of other laser fabrications.
Claims (6)
1, a kind of laser COD eliminating method that is suitable for producing in enormous quantities, its concrete implementing process characteristics are:
According to the quantum well mixing principle, utilize zinc atom to induce III family element or V group element to expand mutually, thereby produce the quantum well mixing phenomenon in the diffusion of III-V family semiconducting compound;
Diffusion method is constant source open pipe diffusion zinc method, wherein zinc source---the making of zinc oxide and the diffusion of zinc are to finish in a step.
2, the laser COD eliminating method that is suitable for producing in enormous quantities according to claim 1 is characterized in that, its thought source is according to the quantum well mixing principle, utilizes the diffusion of zinc atom to quicken quantum well mixing, realizes the making of non-absorbing window.
3, the laser COD eliminating method that is suitable for producing in enormous quantities according to claim 1 is characterized in that, expanding the zinc method is that the constant source open pipe expands the zinc method.
4, the laser COD eliminating method that is suitable for producing in enormous quantities according to claim 1, it is characterized in that, the making of zinc source---zinc oxide is made of the metal-organic chemical vapor deposition equipment technology growth, growth source diethyl zinc and deionized water, and temperature is at 120～300 ℃.
5, the laser COD eliminating method that is suitable for producing in enormous quantities according to claim 1 is characterized in that, the diffusion temperature of zinc will be strict controlled in 500～600 ℃, and diffusion depth is in N type covering 13.
6, the laser COD eliminating method that is suitable for producing in enormous quantities according to claim 3 is characterized in that, the constant source open pipe expands the zinc method, promptly be with solid oxide zinc film as expanding the zinc source, under the nitrogen of certain pressure intensity or argon gas atmosphere, carry out the zinc diffusion.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104466671A (en) * | 2014-12-23 | 2015-03-25 | 中国科学院半导体研究所 | Semiconductor laser device and preparing method thereof |
| CN104638516A (en) * | 2015-03-13 | 2015-05-20 | 中国科学院半导体研究所 | Manufacturing method of tunable quantum well laser epitaxial chips of large lattice mismatch |
| CN105720480A (en) * | 2014-12-02 | 2016-06-29 | 山东华光光电子有限公司 | Method for detecting Zn diffusion degree of window area of semiconductor laser with Zn diffusion and device for implementing same |
| CN107887791A (en) * | 2017-11-13 | 2018-04-06 | 苏州长光华芯光电技术有限公司 | A kind of diffusion processing method for realizing SQW disordering |
| CN108847575A (en) * | 2018-07-16 | 2018-11-20 | 中国科学院半导体研究所 | The preparation method and semiconductor laser of semiconductor laser non-absorbing window |
| CN108878612A (en) * | 2018-06-25 | 2018-11-23 | 山东浪潮华光光电子股份有限公司 | A kind of tube core structure for improving the side AlGaInP LED and going out light |
| CN109217108A (en) * | 2017-06-30 | 2019-01-15 | 中国科学院半导体研究所 | Utilize the method for impurity induced immingling technology production semiconductor laser |
-
2005
- 2005-06-09 CN CN 200510011897 patent/CN1877935A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105720480A (en) * | 2014-12-02 | 2016-06-29 | 山东华光光电子有限公司 | Method for detecting Zn diffusion degree of window area of semiconductor laser with Zn diffusion and device for implementing same |
| CN105720480B (en) * | 2014-12-02 | 2018-08-28 | 山东华光光电子股份有限公司 | A kind of method and its realization device of detection diffusion Zn semiconductor laser window region Zn diffusions |
| CN104466671A (en) * | 2014-12-23 | 2015-03-25 | 中国科学院半导体研究所 | Semiconductor laser device and preparing method thereof |
| CN104638516A (en) * | 2015-03-13 | 2015-05-20 | 中国科学院半导体研究所 | Manufacturing method of tunable quantum well laser epitaxial chips of large lattice mismatch |
| CN109217108A (en) * | 2017-06-30 | 2019-01-15 | 中国科学院半导体研究所 | Utilize the method for impurity induced immingling technology production semiconductor laser |
| CN109217108B (en) * | 2017-06-30 | 2020-08-04 | 中国科学院半导体研究所 | Method for manufacturing semiconductor laser by impurity induced hybrid technology |
| CN107887791A (en) * | 2017-11-13 | 2018-04-06 | 苏州长光华芯光电技术有限公司 | A kind of diffusion processing method for realizing SQW disordering |
| CN107887791B (en) * | 2017-11-13 | 2020-01-14 | 苏州长光华芯光电技术有限公司 | Diffusion processing method for realizing quantum well disorder |
| CN108878612A (en) * | 2018-06-25 | 2018-11-23 | 山东浪潮华光光电子股份有限公司 | A kind of tube core structure for improving the side AlGaInP LED and going out light |
| CN108847575A (en) * | 2018-07-16 | 2018-11-20 | 中国科学院半导体研究所 | The preparation method and semiconductor laser of semiconductor laser non-absorbing window |
| CN108847575B (en) * | 2018-07-16 | 2020-02-21 | 中国科学院半导体研究所 | Preparation method of non-absorption window of semiconductor laser and semiconductor laser |
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