CN110061416B - Non-absorption window of semiconductor laser, preparation method thereof and semiconductor laser - Google Patents
Non-absorption window of semiconductor laser, preparation method thereof and semiconductor laser Download PDFInfo
- Publication number
- CN110061416B CN110061416B CN201910297034.4A CN201910297034A CN110061416B CN 110061416 B CN110061416 B CN 110061416B CN 201910297034 A CN201910297034 A CN 201910297034A CN 110061416 B CN110061416 B CN 110061416B
- Authority
- CN
- China
- Prior art keywords
- semiconductor laser
- diffusion
- layer
- region
- epitaxial wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a non-absorption window of a semiconductor laser, a preparation method thereof and the semiconductor laser, wherein the preparation method comprises the following steps: growing a diffusion source in a region to be diffused obtained by in-situ etching of an epitaxial wafer of the semiconductor laser; diffusing the diffusion source to a region to be diffused to obtain a diffusion region; and growing a wide band gap layer on the surface of the diffusion region, wherein the wide band gap layer and the diffusion region form a non-absorption window. According to the preparation method of the non-absorption window of the semiconductor laser, firstly, impurity ions are diffused into an epitaxial wafer of the semiconductor laser in a diffusion mode, then, a wide forbidden band material grows on a diffusion region to form a wide forbidden band layer, and the wide forbidden band layer and the non-absorption window form a non-absorption window region. In the prior art, when a non-absorption window with a required thickness is formed by diffusion, the diffusion needs to be carried out for more than 10 hours at a high temperature of more than 800 ℃. The invention diffuses and grows the broadband material in the same equipment, thereby reducing the diffusion depth and diffusion time required in diffusion.
Description
Technical Field
The invention relates to the technical field of semiconductor lasers, in particular to a non-absorption window of a semiconductor laser, a preparation method of the non-absorption window and the semiconductor laser.
Background
The semiconductor laser disaster optical cavity surface damage (COD) is a main factor that limits the power output of the semiconductor laser and affects the lifetime of the device, the COD is that impurities or dislocations on the cavity surface absorb laser light, which causes local over-high energy, the temperature rise causes the band gap of the semiconductor material to shrink, the photon absorption is stronger, and after the temperature rise, a vicious circle is formed, which finally causes the generation of COD. The non-absorption window structure forms a window region on the cavity surface by using a material with a wider energy band gap than that of the substrate material, so that the light absorption of the cavity surface is greatly reduced due to the wide band gap effect when the laser works, thereby reducing the heat generation and eliminating the possibility of COD generation.
Impurity induced disordering diffusion is a common method for preparing a non-absorption window region, and is mainly technically characterized in that impurity atoms are diffused into a semiconductor laser in a mode of depositing a diffusion source and then diffusing at high temperature, so that materials in a quantum well region are mixed, and the non-absorption window is prepared. When the non-absorption window is prepared by impurity induced disordered diffusion, because the diffusion source is far away from a quantum well light emitting area of the device, the diffusion distance is long (more than about 3 um), the diffusion process is closely related to the defect density, the interface quality and the diffusion parameter in the crystal material, the required diffusion temperature is high (generally more than 800 ℃), the diffusion time is generally longer than 10 hours, and the repeatability and the stability are difficult to control; long term high temperature processing can also affect the device body structure, causing wavelength drift and performance degradation.
Disclosure of Invention
In view of this, embodiments of the present invention provide a non-absorption window of a semiconductor laser, a method for manufacturing the non-absorption window, and a semiconductor laser, so as to solve the problems of wavelength drift and performance degradation caused by long-time high-temperature processing affecting the device body structure when the non-absorption window is manufactured by impurity-induced disordered diffusion.
The technical scheme provided by the invention is as follows:
the first aspect of the embodiments of the present invention provides a method for preparing a non-absorption window of a semiconductor laser, where the method includes: growing a diffusion source in a region to be diffused obtained by in-situ etching of an epitaxial wafer of the semiconductor laser; diffusing the diffusion source to the region to be diffused to obtain a diffusion region; and growing a wide forbidden band layer on the surface of the diffusion region, wherein the wide forbidden band layer and the diffusion region form a non-absorption window.
Further, before growing a diffusion source in a region to be diffused of the semiconductor laser epitaxial wafer, the method comprises the following steps: depositing a mask layer on the upper surface of the semiconductor laser epitaxial wafer; forming a graphical mask layer on the upper surface of the epitaxial wafer by adopting photoetching and etching processes; and carrying out in-situ etching on the part of the epitaxial wafer, which is not covered by the graphical mask layer, so as to obtain the region to be diffused.
Further, before depositing a mask layer on the upper surface of the semiconductor laser epitaxial wafer, the method comprises the following steps: selecting a substrate; and sequentially growing a buffer layer, a lower limiting layer, a lower waveguide layer, a quantum well, a barrier layer, an upper waveguide layer, an upper limiting layer and an ohmic contact layer on the substrate to form the epitaxial wafer.
Further, the in-situ etching of the portion of the epitaxial wafer not covered by the patterned mask layer includes: etching the part of the epitaxial wafer, which is not covered by the graphical mask layer, in equipment for forming the graphical mask layer to a preset distance away from the quantum well and the barrier layer; the preset distance is 0-0.3 μm.
Further, the step of carrying out in-situ etching on the part of the epitaxial wafer not covered by the patterned mask layer and the step of growing the diffusion source in the region to be diffused of the epitaxial wafer of the semiconductor laser are carried out in the same equipment.
Further, the diffusing the diffusion source to the region to be diffused to obtain a diffusion region includes: and annealing the semiconductor laser epitaxial wafer with the grown diffusion source in the atmosphere of 600-800 ℃, wherein the annealing time is less than 1 hour.
Further, the diffusion of the diffusion source to the diffusion area and the growth of the wide band gap layer on the surface of the diffusion area comprise: and removing the diffusion source which is not diffused on the surface of the diffusion region.
Further, growing a wide band gap layer on the surface of the diffusion region, comprising: and growing a p-type doped or n-type doped wide bandgap material on the surface of the diffusion region, wherein the wide bandgap material, the mask layer, the upper limiting layer and the ohmic contact layer form a current blocking layer.
A second aspect of the embodiments of the present invention provides a non-absorption window of a semiconductor laser, where the non-absorption window is prepared by using the method for manufacturing a non-absorption window of a semiconductor laser according to any one of the first aspect of the embodiments of the present invention.
A third aspect of embodiments of the present invention provides a semiconductor laser comprising a non-absorbing window of a semiconductor laser as described in the second aspect of embodiments of the present invention.
The technical scheme provided by the invention has the following effects:
according to the non-absorption window of the semiconductor laser, the preparation method of the non-absorption window of the semiconductor laser and the semiconductor laser, a mode of combining a quantum well intermixing technology and secondary epitaxial growth is adopted, firstly, a mode of impurity induction disordered diffusion in the quantum well intermixing technology is adopted, so that impurity ions are diffused into an epitaxial wafer of the semiconductor laser, then, a wide forbidden band layer is formed by growing a wide forbidden band material on a diffusion region, and the wide forbidden band layer and the non-absorption window jointly form a non-absorption window region. In the prior art, when a non-absorption window with a required thickness is formed by impurity induced disordered diffusion, the non-absorption window needs to be diffused for more than 10 hours at a high temperature of more than 800 ℃, the diffusion temperature is high, the diffusion time is long, and the repeatability and the stability are difficult to control. The invention combines two modes, carries out diffusion and grows the wide bandgap material in the same equipment, reduces the diffusion depth and diffusion time during diffusion, can reduce the diffusion time to be less than 1 hour at the high temperature of more than 800 ℃, solves the problems of wavelength drift and performance deterioration caused by long-time high-temperature treatment, improves the reliability of the device and reduces the production cost.
In addition, in the prior art, when a non-absorption window region is formed through secondary epitaxial growth, a light emitting region of a quantum well of a device needs to be etched, and a broadband forbidden material needs to be grown again, so that impurities and material defects can be generated in the process, and the light emitting efficiency of the quantum well is influenced. The invention adopts a mode of firstly diffusing and then growing, does not need to etch the luminous zone of the quantum well, reduces the influence of impurities and material defects and improves the luminous efficiency of the quantum well.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a flow chart of a method of fabricating a non-absorbing window of a semiconductor laser according to an embodiment of the invention;
fig. 2 is a flow chart of a method of fabricating a non-absorbing window of a semiconductor laser according to another embodiment of the invention;
fig. 3 is a flow chart of a method of fabricating a non-absorbing window of a semiconductor laser according to another embodiment of the present invention;
fig. 4A to 4G are schematic structural diagrams obtained by a method for manufacturing a non-absorption window of a semiconductor laser according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment of the invention provides a preparation method of a non-absorption window of a semiconductor laser, which comprises the following steps of:
s101: and growing a diffusion source in a region to be diffused obtained by in-situ etching of the epitaxial wafer of the semiconductor laser. Specifically, the semiconductor laser epitaxial wafer may have a structure including, from top to bottom, a substrate, a buffer layer, a lower confinement layer, a lower waveguide layer, a quantum well and a quantum well barrier region, an upper waveguide layer, an upper confinement layer, and an ohmic contact layer; the diffusion source grown in the diffusion zone may be a silicon-containing diffusion source or a zinc-containing diffusion source, which is not limited in this application. In growing the diffusion source, a Plasma Enhanced Chemical Vapor Deposition (PECVD) method or a Metal-organic Chemical Vapor Deposition (MOCVD) method may be used, which is not limited in the present application.
S102: and diffusing the diffusion source to the region to be diffused to obtain a diffusion region. Specifically, the semiconductor laser epitaxial wafer on which the diffusion source grows is annealed in the atmosphere of 600-800 ℃, wherein the annealing time is less than 1 hour. And in the annealing process, the diffusion source is gradually diffused into the region to be diffused to obtain a diffusion region. Wherein, when the diffusion source is a silicon-containing diffusion source, the formed diffusion region can also play the roles of electrical isolation and optical limitation.
S103: and growing a wide band gap layer on the surface of the diffusion region, wherein the wide band gap layer and the diffusion region form a non-absorption window. Specifically, the wide bandgap layer may be InGaP, AlGaAs, etc. materials with different doping types, which is not limited in this application.
Through the steps S101 to S103, the method for manufacturing the non-absorption window of the semiconductor laser according to the embodiment of the present invention adopts a mode of combining the quantum well intermixing technology and the secondary epitaxial growth, and firstly adopts a mode of impurity-induced disordered diffusion in the quantum well intermixing technology to diffuse impurity ions into the epitaxial wafer of the semiconductor laser, and then forms a wide band gap layer by growing a wide band gap material on the diffusion region, wherein the wide band gap layer and the non-absorption window together form the non-absorption window region. In the prior art, when a non-absorption window with a required thickness is formed by impurity induced disordered diffusion, the non-absorption window needs to be diffused for more than 10 hours at a high temperature of more than 800 ℃, the diffusion temperature is high, the diffusion time is long, and the repeatability and the stability are difficult to control. The invention combines two modes, carries out diffusion and grows the wide bandgap material in the same equipment, reduces the diffusion depth and diffusion time during diffusion, can reduce the diffusion time to be less than 1 hour at the high temperature of more than 800 ℃, solves the problems of wavelength drift and performance deterioration caused by long-time high-temperature treatment, improves the reliability of the device and reduces the production cost.
In addition, in the prior art, when a non-absorption window region is formed through secondary epitaxial growth, a light emitting region of a quantum well of a device needs to be etched, and a broadband material needs to be grown again, so that impurities and material defects are generated in the process, and the light emitting efficiency of the quantum well is influenced. The invention adopts a mode of firstly diffusing and then growing, does not need to etch the luminous zone of the quantum well, reduces the influence of impurities and material defects and improves the luminous efficiency of the quantum well.
As an alternative implementation manner of the embodiment of the present invention, as shown in fig. 2, before growing a diffusion source in a region to be diffused of an epitaxial wafer of a semiconductor laser, the method includes the following steps:
s111: and depositing a mask layer on the upper surface of the epitaxial wafer of the semiconductor laser. Specifically, a mask layer is formed on the upper surface of the ohmic contact layer of the semiconductor laser epitaxial wafer, the mask layer may be a silicon nitride film or a silicon oxide film, the thickness of the mask layer may be controlled between 50-200 nm, and the growth temperature of the mask layer is controlled between 200-500 ℃.
S112: and forming a patterned mask layer on the upper surface of the epitaxial wafer by adopting photoetching and etching processes. Specifically, the shape of the patterned mask layer may be a strip shape, or may be other shapes, which is not limited in this application.
S113: and carrying out in-situ etching on the part of the epitaxial wafer, which is not covered by the graphical mask layer, so as to obtain a region to be diffused. Specifically, the depth of the epitaxial wafer in-situ etching can be controlled to be spaced from the quantum well and the barrier layer by a distance of 0-0.3 μm. In addition, the deposition of the mask layer, the patterning of the mask layer, and the in-situ etching process may be performed in the same apparatus. The in-situ etching refers to directly etching the epitaxial wafer in the same equipment after the mask layer is patterned.
In the embodiment of the invention, compared with the method of directly depositing the diffusion source on the epitaxial wafer, the method of depositing the diffusion source on the epitaxial wafer after in-situ etching is carried out on the epitaxial wafer, the method has the advantages that the deposited diffusion source after etching is closer to the quantum well, and the requirement on the thickness of the diffusion source film is lower. The diffusion distance of the impurity element can be greatly reduced. Meanwhile, compared with a non-in-situ etching method, the in-situ etching method does not need to etch the quantum well, reduces intermediate links, and avoids performance deterioration of the quantum well caused by impurities and material defects.
As an optional implementation manner of the embodiment of the present invention, in step S113, performing in-situ etching on a portion of the epitaxial wafer not covered by the patterned mask layer, and in step S101, performing diffusion source growth in a region to be diffused of the epitaxial wafer of the semiconductor laser in the same device. Therefore, in the process of forming the non-absorption window, the epitaxial wafer is not required to be repeatedly switched to the processing equipment, and the epitaxial wafer is frequently exposed to the external environment, so that the influence of external impurities on the device is reduced.
As an optional implementation manner of the embodiment of the present invention, the diffusing step S102 of diffusing the diffusion source into the region to be diffused and the growing step S103 of a wide forbidden band layer on the surface of the diffusion region further include the following steps:
s120: and removing the diffusion source which is not diffused on the surface of the diffusion region. Specifically, upon removal, some acid solution may be used for removal using a washing process.
As an alternative implementation manner of the embodiment of the present invention, a wide bandgap layer is grown on the surface of the diffusion region, where the wide bandgap layer may include a p-type doped or n-type doped wide bandgap material, and the wide bandgap material may be InGaP or AlGaAs, which is not limited in this application. After the wide band gap layer is grown, the wide band gap layer, the mask layer, the upper limiting layer and the ohmic contact layer form a current blocking layer.
In the embodiment of the invention, the wide band gap layer of the non-absorption window can flexibly select material components, doping types and concentrations, band gap widths and the like, the wide band gap layer, the mask layer, the upper limiting layer and the ohmic contact layer form the current blocking layer together, and the current blocking is realized by using a doping technology without subsequent processes such as ion implantation, so that the whole process is simplified, the additional impurity pollution possibly brought by the middle process is reduced, and the process repeatability is improved.
As an alternative implementation manner of the embodiment of the present invention, as shown in fig. 3, a method for preparing a non-absorption window of a semiconductor laser may be performed by the following steps:
s201: depositing a mask layer 20 on the upper surface of the semiconductor laser epitaxial wafer 10; the structure after S201 is shown in fig. 4A.
S202: forming a patterned mask layer 21 on the upper surface of the epitaxial wafer 10 by adopting photoetching and etching processes; the structure after S202 is shown in fig. 4B.
S203: carrying out in-situ etching on the part of the epitaxial wafer 10 not covered by the graphical mask layer to generate a strip-shaped epitaxial wafer upper surface 11 so as to obtain a region to be diffused; the structure after S203 is shown in fig. 4C.
S204: growing a diffusion source 30 in a region to be diffused of the semiconductor laser epitaxial wafer 10; the structure after S204 is shown in fig. 4D.
S205: diffusing the diffusion source 30 to the region to be diffused to obtain a diffusion region 40; the structure after S205 is shown in fig. 4E.
S206: removing the non-diffused diffusion source on the surface of the diffusion region; the structure after S206 is shown in fig. 4F.
S207: a wide forbidden band layer 50 is grown on the surface of the diffusion region, and the wide forbidden band layer 50 and the diffusion region 40 form a non-absorption window. The structure after S207 is shown in fig. 4G.
In the embodiment of the present invention, the steps S201 to S207 and the process of forming the epitaxial wafer of the semiconductor laser may be performed in the same apparatus, and the epitaxial wafer is not required to be repeatedly switched between process apparatuses, and is frequently exposed to the external environment, so as to reduce the influence of external impurities on the device, wherein different processes in the steps may be performed in different reaction chambers of the same apparatus.
The embodiment of the invention also provides a non-absorption window of the semiconductor laser, and the non-absorption window is prepared by adopting the manufacturing method of the non-absorption window of the semiconductor laser provided by the embodiment.
The non-absorption window of the semiconductor laser provided by the embodiment of the invention adopts a mode of combining a quantum well intermixing technology and secondary epitaxial growth, firstly adopts a mode of impurity induced disordered diffusion in the quantum well intermixing technology to diffuse impurity ions into an epitaxial wafer of the semiconductor laser, and then forms a wide forbidden band layer by growing a wide forbidden band material on a diffusion region, wherein the wide forbidden band layer and the non-absorption window jointly form a non-absorption window region. In the prior art, when a non-absorption window with a required thickness is formed by impurity induced disordered diffusion, the non-absorption window needs to be diffused for more than 10 hours at a high temperature of more than 800 ℃, and the repeatability and the stability are difficult to control. The invention combines two modes, carries out diffusion and grows the wide bandgap material in the same equipment, reduces the diffusion depth and diffusion time during diffusion, can reduce the diffusion time to be less than 1 hour at the high temperature of more than 800 ℃, solves the problems of wavelength drift and performance deterioration caused by long-time high-temperature treatment, improves the reliability of the device and reduces the production cost.
In addition, in the prior art, when a non-absorption window region is formed through secondary epitaxial growth, a light emitting region of a quantum well of a device needs to be etched, and a broadband material needs to be grown again, so that impurities and material defects are generated in the process, and the light emitting efficiency of the quantum well is influenced. The invention adopts a mode of firstly diffusing and then growing, does not need to etch the luminous zone of the quantum well, reduces the influence of impurities and material defects and improves the luminous efficiency of the quantum well.
The embodiment of the invention also provides a semiconductor laser, which comprises the non-absorption window of the semiconductor laser provided by the embodiment.
The semiconductor laser provided by the embodiment of the invention comprises a non-absorption window area, which can eliminate the damage of the semiconductor laser to a catastrophic optical cavity surface, wherein the preparation of the non-absorption window adopts a mode of combining a quantum well intermixing technology and secondary epitaxial growth, firstly, a mode of impurity induced disordered diffusion in the quantum well intermixing technology is adopted to diffuse impurity ions into an epitaxial wafer of the semiconductor laser, then, a wide forbidden band material is grown on the diffusion area to form a wide forbidden band layer, and the wide forbidden band layer and the non-absorption window together form the non-absorption window area. In the prior art, when a non-absorption window with a required thickness is formed by impurity induced disordered diffusion, the non-absorption window needs to be diffused for more than 10 hours at a high temperature of more than 800 ℃, and the repeatability and the stability are difficult to control. The invention combines two modes, carries out diffusion and grows the wide bandgap material in the same equipment, reduces the diffusion depth and diffusion time during diffusion, can reduce the diffusion time to be less than 1 hour at the high temperature of more than 800 ℃, solves the problems of wavelength drift and performance deterioration caused by long-time high-temperature treatment, improves the reliability of the device and reduces the production cost.
In addition, in the prior art, when a non-absorption window region is formed through secondary epitaxial growth, a light emitting region of a quantum well of a device needs to be etched, and a broadband material needs to be grown again, so that impurities and material defects are generated in the process, and the light emitting efficiency of the quantum well is influenced. The invention adopts a mode of firstly diffusing and then growing, does not need to etch the luminous zone of the quantum well, reduces the influence of impurities and material defects and improves the luminous efficiency of the quantum well.
Although the embodiments of the present invention have been described in conjunction with the accompanying drawings, those skilled in the art may make various modifications and variations without departing from the spirit and scope of the invention, and such modifications and variations fall within the scope defined by the appended claims.
Claims (10)
1. A method for preparing a non-absorption window of a semiconductor laser is characterized by comprising the following steps:
growing a diffusion source in a region to be diffused, which is obtained by in-situ etching of an epitaxial wafer of the semiconductor laser;
diffusing the diffusion source to the region to be diffused to obtain a diffusion region;
and growing a wide forbidden band layer on the surface of the diffusion region, wherein the wide forbidden band layer and the diffusion region form a non-absorption window.
2. The method for preparing the non-absorption window of the semiconductor laser as claimed in claim 1, wherein before growing the diffusion source in the region to be diffused obtained by the in-situ etching of the epitaxial wafer of the semiconductor laser, the method comprises:
depositing a mask layer on the upper surface of the semiconductor laser epitaxial wafer;
forming a graphical mask layer on the upper surface of the epitaxial wafer by adopting photoetching and etching processes;
and carrying out in-situ etching on the part of the epitaxial wafer, which is not covered by the graphical mask layer, so as to obtain the region to be diffused.
3. The method of fabricating a non-absorbing window of a semiconductor laser as claimed in claim 2 comprising, prior to depositing a mask layer on the top surface of the semiconductor laser epitaxial wafer:
selecting a substrate;
and sequentially growing a buffer layer, a lower limiting layer, a lower waveguide layer, a quantum well, a barrier layer, an upper waveguide layer, an upper limiting layer and an ohmic contact layer on the substrate to form the epitaxial wafer.
4. A method of fabricating a non-absorbing window of a semiconductor laser as claimed in claim 3 wherein in-situ etching the portion of the epitaxial wafer not covered by the patterned mask layer comprises:
etching the part of the epitaxial wafer, which is not covered by the graphical mask layer, in equipment for forming the graphical mask layer to a preset distance away from the quantum well and the barrier layer; the preset distance is 0-0.3 μm.
5. A method for preparing a non-absorbing window of a semiconductor laser as claimed in any one of claims 2 to 4,
and carrying out in-situ etching on the part of the epitaxial wafer not covered by the patterned mask layer and carrying out in-situ etching on the epitaxial wafer of the semiconductor laser to obtain a diffusion source growing in a region to be diffused in the same equipment.
6. The method for preparing a non-absorbing window of a semiconductor laser as claimed in claim 1 wherein said diffusing said diffusion source into said region to be diffused to obtain a diffusion region comprises:
and annealing the semiconductor laser epitaxial wafer with the grown diffusion source in the atmosphere of 600-800 ℃, wherein the annealing time is less than 1 hour.
7. The method for preparing a non-absorbing window of a semiconductor laser as claimed in claim 1 wherein between said diffusing said diffusion source into said region to be diffused and said growing a layer of wide band gap on the surface of the diffusion region comprises:
and removing the diffusion source which is not diffused on the surface of the diffusion region.
8. A method for forming a non-absorbing window of a semiconductor laser as claimed in claim 3 wherein growing a wide band gap layer on the surface of said diffusion region comprises:
and growing a p-type doped or n-type doped wide bandgap material on the surface of the diffusion region, wherein the wide bandgap material, the mask layer, the upper limiting layer and the ohmic contact layer form a current blocking layer.
9. A non-absorbing window of a semiconductor laser, wherein the non-absorbing window is fabricated by the method for fabricating a non-absorbing window of a semiconductor laser according to any one of claims 1 to 8.
10. A semiconductor laser comprising the semiconductor laser non-absorbing window of claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910297034.4A CN110061416B (en) | 2019-04-12 | 2019-04-12 | Non-absorption window of semiconductor laser, preparation method thereof and semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910297034.4A CN110061416B (en) | 2019-04-12 | 2019-04-12 | Non-absorption window of semiconductor laser, preparation method thereof and semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110061416A CN110061416A (en) | 2019-07-26 |
| CN110061416B true CN110061416B (en) | 2020-04-10 |
Family
ID=67318955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910297034.4A Active CN110061416B (en) | 2019-04-12 | 2019-04-12 | Non-absorption window of semiconductor laser, preparation method thereof and semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110061416B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114389152B (en) * | 2022-01-13 | 2023-10-13 | 中国科学院半导体研究所 | Epitaxial growth method of semiconductor laser |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3725582B2 (en) * | 1995-07-05 | 2005-12-14 | 三菱電機株式会社 | Semiconductor laser device manufacturing method and semiconductor laser device |
| JP2002305353A (en) * | 2001-04-06 | 2002-10-18 | Sanyo Electric Co Ltd | Nitride semiconductor laser element and manufacturing method therefor |
| KR100453962B1 (en) * | 2001-12-10 | 2004-10-20 | 엘지전자 주식회사 | Semiconductor laser device and method for forming a window layer on the facet of thereof |
| CN100550543C (en) * | 2002-06-26 | 2009-10-14 | 阿莫诺公司 | Nitride semiconductor laser device and manufacture method thereof |
| CN104158087A (en) * | 2014-05-29 | 2014-11-19 | 北京工业大学 | Cycle annealing method based on InGaAs/AlGaAs quantum well intermixing |
| CN104752954B (en) * | 2015-03-23 | 2018-02-27 | 西安理工大学 | Semiconductor laser made using zinc oxide quantum well mixing and preparation method thereof |
-
2019
- 2019-04-12 CN CN201910297034.4A patent/CN110061416B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN110061416A (en) | 2019-07-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2686764B2 (en) | Method for manufacturing optical semiconductor device | |
| US9948064B2 (en) | Method of manufacturing semiconductor device, and semiconductor device | |
| WO2012137426A1 (en) | Semiconductor optical device and method for manufacturing same | |
| CN110061416B (en) | Non-absorption window of semiconductor laser, preparation method thereof and semiconductor laser | |
| CN100349338C (en) | Buried heterostructure semiconductor optical device with blue shift effect of wavelengh, and method | |
| JP2013168620A (en) | Semiconductor laser manufacturing method | |
| CN110086080B (en) | Non-absorption window of semiconductor laser, preparation method thereof and semiconductor laser | |
| US20210288471A1 (en) | Vertical-Cavity Surface-Emitting Device with Epitaxial Index Guide | |
| JP5379823B2 (en) | Manufacturing method of semiconductor optical device | |
| KR102293455B1 (en) | Semiconductor laser diode device and manufacturing method | |
| JPH0969667A (en) | Semiconductor laser device and manufacture thereof | |
| JP5920043B2 (en) | Semiconductor laser and manufacturing method thereof | |
| US20150311327A1 (en) | Itc-igbt and manufacturing method therefor | |
| RU2324999C2 (en) | Method of quantum wells mixing within semiconductor device and semiconductor device structure made according to this method | |
| CN114389152B (en) | Epitaxial growth method of semiconductor laser | |
| JPH11354886A (en) | Semiconductor laser and its manufacturing method | |
| JPH05129721A (en) | Semiconductor laser and manufacture thereof | |
| US7046708B2 (en) | Semiconductor laser device including cladding layer having stripe portion different in conductivity type from adjacent portions | |
| JPH10321945A (en) | Semiconductor laser device and its manufacture | |
| TW202324864A (en) | Semiconductor laser and method for producing semiconductor laser | |
| KR0178488B1 (en) | Fabrication method of a surface emitting laser | |
| JPH08274413A (en) | Semiconductor device and its manufacture | |
| KR950006987B1 (en) | Semiconductor laser diode manufacturing method | |
| JP5673600B2 (en) | Manufacturing method of semiconductor optical device | |
| CN114566868A (en) | GaAs-based laser epitaxial wafer with GaN current channel and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 215163 No.2 workshop-1-102, No.2 workshop-2-203, zone a, industrial square, science and Technology City, No.189 Kunlunshan Road, high tech Zone, Suzhou City, Jiangsu Province Patentee after: Suzhou Changguang Huaxin Optoelectronic Technology Co.,Ltd. Address before: 215163 Building 2, No.189, Kunlunshan Road, high tech Zone, Suzhou City, Jiangsu Province Patentee before: SUZHOU EVERBRIGHT PHOTONICS TECHNOLOGY Co.,Ltd. |