CN110061416A - Semiconductor laser non-absorbing window and preparation method thereof and semiconductor laser - Google Patents
Semiconductor laser non-absorbing window and preparation method thereof and semiconductor laser Download PDFInfo
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- CN110061416A CN110061416A CN201910297034.4A CN201910297034A CN110061416A CN 110061416 A CN110061416 A CN 110061416A CN 201910297034 A CN201910297034 A CN 201910297034A CN 110061416 A CN110061416 A CN 110061416A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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Abstract
The invention discloses a kind of semiconductor laser non-absorbing window and preparation method thereof and semiconductor laser, which includes: to grow diffusion source to diffusion zone what semiconductor laser device epitaxial wafer original position etching obtained；Diffusion source is diffused to diffusion zone, diffusion region is obtained；Wide band gap layer is grown on the surface of diffusion region, wide band gap layer and diffusion region form non-absorbing window.Semiconductor laser non-absorbing window preparation method provided in an embodiment of the present invention, first by the way of diffusion, so that foreign ion is diffused into semiconductor laser device epitaxial wafer, then wide-band gap material is grown on diffusion region, wide band gap layer is formed, wide band gap layer and non-absorbing window constitute non-absorbing window area.It when diffuseing to form the non-absorbing window of required thickness in the prior art, needs at a high temperature of 800 degrees Celsius or more, diffusion 10 is more than hour.The present invention is diffused in same equipment and grows wide-band gap material, reduces required diffusion depth and diffusion time when diffusion.
Description
Technical field
The present invention relates to semiconductor laser fields, and in particular to a kind of semiconductor laser non-absorbing window and its
Preparation method and semiconductor laser.
Background technique
Semiconductor laser catastrophic optics cavity surface damage (COD, Catastrophic optical damage) is limitation
Semiconductor laser power output and the principal element for influencing device lifetime, COD are because impurity or dislocation etc. in Cavity surface lack
Laser can be absorbed by falling into, and cause local energy excessively high, the raising of temperature will lead to the band-gap narrowing of semiconductor material, photonic absorption
It is stronger, it will form vicious circle after temperature continues to increase, eventually lead to the generation of COD.Non-absorbing window structure is to utilize
Material more broader than substrate material band gap forms a window region in Cavity surface, in this way in laser works due to broad-band gap
Effect greatly reduces the light absorption of Cavity surface to reduce heat generation, to reach the possibility eliminating COD and occurring.
Impurity induced disordering diffusion is a kind of common method for preparing non-absorbing window area, is mainly technically characterized by leading to
The mode for crossing first deposit and spread source, subsequent High temperature diffusion makes foreign atom to spreading inside semiconductor laser, realizes Quantum Well
Region material mixes, to prepare non-absorbing window.By impurity induced disordering diffusion for when non-absorbing window by
Farther out in diffusion quantum well radiation area of the source from device, diffusion length is long (about 3um or more), and diffusion process is again and in crystalline material
Defect concentration, interface quality and diffusion parameter be closely related, required diffusion temperature is high (generally higher than 800 DEG C), diffusion time
Generally also longer than 10 hours, therefore its repeatability and stability are all difficult to control；Prolonged high-temperature process also will affect device
Main structure causes wave length shift and penalty.
Summary of the invention
In view of this, the embodiment of the invention provides a kind of semiconductor laser non-absorbing windows and preparation method thereof and half
Conductor laser, when solving through impurity induced disordering diffusion for non-absorbing window, prolonged high-temperature process influences
Device main body structure, the problem of causing wave length shift and penalty.
Technical solution proposed by the present invention is as follows:
First aspect of the embodiment of the present invention provides a kind of preparation method of semiconductor laser non-absorbing window, the preparation side
Method includes: to grow diffusion source to diffusion zone what semiconductor laser device epitaxial wafer original position etching obtained；The diffusion source is expanded
To diffusion zone described in being dissipated to, diffusion region is obtained；Wide band gap layer, the wide band gap layer and the expansion are grown on the surface of diffusion region
It dissipates area and forms non-absorbing window.
Further, include: before semiconductor laser device epitaxial wafer grows diffusion source to diffusion zone described
The upper surface deposition mask layer of the semiconductor laser device epitaxial wafer；Using lithography and etching technique, the table on the epitaxial wafer
Face forms Patterned masking layer；The part of the non-cover graphics mask layer of the epitaxial wafer is subjected to etching in situ, is obtained described
To diffusion region.
It further, include: selected substrate before the upper surface deposition mask layer of the semiconductor laser device epitaxial wafer；
Successively grown buffer layer, lower limit layer, lower waveguide layer, Quantum Well and barrier layer, upper ducting layer, upper limiting layer over the substrate
And ohmic contact layer, form the epitaxial wafer.
Further, including: by the part progress etching in situ of the non-cover graphics mask layer of the epitaxial wafer will be described
The part of the non-cover graphics mask layer of epitaxial wafer formed Patterned masking layer equipment in be etched to the Quantum Well and
Barrier layer interval pre-determined distance；The pre-determined distance is 0-0.3 μm.
Further, the part of the non-cover graphics mask layer of the epitaxial wafer is carried out original position etching by step and step exists
Semiconductor laser device epitaxial wafer carries out in same equipment to diffusion zone growth diffusion source.
Further, described to diffuse to the diffusion source described to diffusion zone, obtaining to diffusion region includes: to have growth
The semiconductor laser device epitaxial wafer in diffusion source is annealed in 600 DEG C -800 DEG C of atmosphere, wherein annealing time is small less than 1
When.
Further, it is described by the diffusion source diffuse to it is described to diffusion zone and it is described on the surface of diffusion region it is raw
It include: the removal non-diffused diffusion source in diffusion region surface between long wide band gap layer.
Further, wide band gap layer is grown on the diffusion region surface, comprising: grow p-type on the surface of diffusion region and mix
Miscellaneous or n-type doping wide-band gap material, the wide-band gap material and the mask layer, the upper limiting layer and ohmic contact layer shape
At current barrier layer.
Second aspect of the embodiment of the present invention provides a kind of semiconductor laser non-absorbing window, and the non-absorbing window uses
It is prepared by the production method of the described in any item semiconductor laser non-absorbing windows of first aspect of the embodiment of the present invention.
The third aspect of the embodiment of the present invention provides a kind of semiconductor laser, which includes such as the embodiment of the present invention the
Semiconductor laser non-absorbing window described in two aspects.
Technical solution proposed by the present invention, has the effect that
Semiconductor laser non-absorbing window provided in an embodiment of the present invention and preparation method thereof and semiconductor laser, are adopted
The mode combined is grown with quantum well mixing technology and secondary epitaxy, is lured first using the impurity in quantum well mixing technology
The mode for leading disordering diffusion, so that foreign ion is diffused into semiconductor laser device epitaxial wafer, then by diffusion region
Wide-band gap material is grown, forms wide band gap layer, wide band gap layer and non-absorbing window together constitute non-absorbing window area.And it is existing
When in technology by the impurity induced disordering non-absorbing window for diffuseing to form required thickness, need at 800 degrees Celsius or more
Under high temperature, it is more than hour to spread 10, diffusion temperature is high, diffusion time is long, and repeatability and stability are all difficult to control.The present invention
It is combined using two ways, wide-band gap material is diffused and grown in same equipment, the diffusion reduced when diffusion is deep
Degree and diffusion time, at a high temperature of 800 degrees Celsius or more, diffusion time can solve at long-time high temperature less than 1 hour
The problem of reason causes wave length shift and penalty improves the reliability of device, reduces production cost.
In addition, needing the quantum of etched features when growing to form non-absorbing window area by secondary epitaxy in the prior art
Trap luminous zone, regrowth wide-band gap material, this process can generate impurity and fault in material, the luminous efficiency of influence amount trap.This hair
It is bright without etching Quantum Well luminous zone, to reduce the influence of impurity and fault in material by the way of first spreading regrowth, it improves
The luminous efficiency of Quantum Well.
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is the flow chart of the production method of semiconductor laser non-absorbing window according to an embodiment of the present invention；
Fig. 2 is the flow chart of the production method of semiconductor laser non-absorbing window according to another embodiment of the present invention；
Fig. 3 is the flow chart of the production method of semiconductor laser non-absorbing window according to another embodiment of the present invention；
Fig. 4 A to Fig. 4 G is obtained by the production method of semiconductor laser non-absorbing window according to an embodiment of the present invention
Structural schematic diagram.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those skilled in the art are not having
Every other embodiment obtained under the premise of creative work is made, shall fall within the protection scope of the present invention.
The embodiment of the present invention provides a kind of preparation method of semiconductor laser non-absorbing window, as shown in Figure 1, the preparation
Method includes the following steps:
S101: what in semiconductor laser device epitaxial wafer original position, etching was obtained grows diffusion source to diffusion zone.Specifically, half
The structure of conductor laser epitaxial wafer can be substrate, buffer layer, lower limit layer, lower waveguide including setting gradually from top to bottom
Floor, Quantum Well and Quantum Well build area, upper ducting layer, upper limiting layer and ohmic contact layer；In the diffusion source grown with diffusion zone
It can be siliceous diffusion source, be also possible to the diffusion source containing zinc, the application does not limit this.It, can when growing diffusion source
With using plasma enhancing chemical vapour deposition technique (Plasma Enhanced Chemical Vapor Deposition,
) or Metalorganic chemical vapor deposition method (MOCVD, Metal-organic Chemical Vapor PECVD
Deposition), the application does not limit this.
S102: diffusion source is diffused to diffusion zone, diffusion region is obtained.Specifically, growth there is into partly leading for diffusion source
Body laser epitaxial wafer is annealed in 600 DEG C -800 DEG C of atmosphere, wherein annealing time was less than 1 hour.In annealing
In the process, diffusion source is gradually diffused to obtain diffusion region in diffusion zone.Wherein, when diffusion source is when containing silicon diffusion source, shape
At diffusion region can also play the role of electric isolation and optical confinement.
S103: growing wide band gap layer on the surface of diffusion region, and wide band gap layer and diffusion region form non-absorbing window.Specifically
Ground, wide band gap layer can be the InGaP including different doping types, the materials such as AlGaAs, and the application does not limit this.
S101 to step S103 through the above steps, semiconductor laser non-absorbing window provided in an embodiment of the present invention
Production method uses quantum well mixing skill in such a way that quantum well mixing technology and secondary epitaxy growth combine first
The mode of impurity induced disordering diffusion in art is then led to so that foreign ion is diffused into semiconductor laser device epitaxial wafer
It crosses and grows wide-band gap material on diffusion region, form wide band gap layer, wide band gap layer and non-absorbing window together constitute non-absorbing
Window region.And when in the prior art by the impurity induced disordering non-absorbing window for diffuseing to form required thickness, it needs 800
Degree Celsius or more at a high temperature of, diffusion 10 more than hour, diffusion temperature is high, diffusion time is long, and repeatability and stability are all very
It is difficult to control.The present invention is combined using two ways, and wide-band gap material is diffused and grown in same equipment, reduces expansion
Diffusion depth and diffusion time when dissipating, at a high temperature of 800 degrees Celsius or more, diffusion time can solve less than 1 hour
Long-time high-temperature process causes the problem of wave length shift and penalty, improves the reliability of device, reduces production cost.
In addition, needing the quantum of etched features when growing to form non-absorbing window area by secondary epitaxy in the prior art
Trap luminous zone, regrowth wide-band gap material, this process can generate impurity and fault in material, influence the luminous efficiency of Quantum Well.This
Invention, without etching Quantum Well luminous zone, reduces the influence of impurity and fault in material, mentions by the way of first spreading regrowth
The high luminous efficiency of Quantum Well.
As a kind of optional embodiment of the embodiment of the present invention, as shown in Fig. 2, in semiconductor laser device epitaxial wafer
To include the following steps: before diffusion zone growth diffusion source
S111: in the upper surface deposition mask layer of semiconductor laser device epitaxial wafer.Specifically, in semiconductor laser extension
The ohmic contact layer upper surface of piece forms mask layer, and mask layer can be silicon nitride film or silicon oxide film, the thickness of mask layer
Degree can control between 50-200nm, and the growth temperature of mask layer controls between 200-500 degrees Celsius, and the present invention is to this
Without limitation.
S112: using lithography and etching technique, forms Patterned masking layer on extension on piece surface.Specifically, the figure
The shape for changing mask layer can be bar shaped, be also possible to other shapes, the application does not limit this.
S113: the part of the non-cover graphics mask layer of epitaxial wafer is subjected to etching in situ, is obtained to diffusion region.Specifically
Ground, the depth that epitaxial wafer etches in situ can control at a distance from 0-0.3 μm of Quantum Well and barrier layer interval.In addition, deposition
Mask layer, Patterned masking layer and etching process in situ can carry out in same equipment.Wherein, etching in situ refers to figure
Directly epitaxial wafer is performed etching in same equipment after changing mask layer.
In the embodiment of the present invention, to redeposited diffusion source after epitaxial wafer progress etching in situ and directly in extension on piece deposition
Diffusion source is compared, and the diffusion source deposited after etching is closer apart from Quantum Well, and diffusion source film thickness requires to be lower.Can substantially it subtract
The diffusion length of few impurity element.Etching in situ does not need etching Quantum Well, reduces compared with ex situ lithographic method simultaneously
Intermediate link, so as to avoid Quantum Well because of penalty brought by impurity and fault in material.
As a kind of optional embodiment of the embodiment of the present invention, S113 is by the non-cover graphics exposure mask of the epitaxial wafer
The part of layer carries out etching in situ and S101 setting same to diffusion zone growth diffusion source in semiconductor laser device epitaxial wafer
Standby middle progress.Therefore, it during forming non-absorbing window, does not need epitaxial wafer and repeatedly switches process equipment, continually
It is exposed in external environment, reduces influence of the introduced contaminants to device.
As a kind of optional embodiment of the embodiment of the present invention, S102 diffusion source is diffused to diffusion zone and
It further includes following steps that S103, which is grown on the surface of diffusion region between wide band gap layer:
S120: the removal non-diffused diffusion source in diffusion region surface.Specifically, in removal, some acid solutions can be used
It is removed using the technique of cleaning.
As a kind of optional embodiment of the embodiment of the present invention, wide band gap layer is grown on the surface of diffusion region, wherein
Wide band gap layer may include the wide-band gap material of p-type doping or n-type doping, which can be InGaP or AlGaAs
Equal materials, the application do not limit this.After growing wide band gap layer, wide band gap layer and mask layer, upper limiting layer and Ohmic contact
Layer forms current barrier layer.
In the embodiment of the present invention, the wide band gap layer of non-absorbing window can be with flexible choice material component, doping type and dense
Current barrier layer, Er Qieyou is collectively formed in degree, forbidden bandwidth etc., wide band gap layer and mask layer, upper limiting layer and ohmic contact layer
In realizing current blocking using doping techniques, it is no longer necessary to the subsequent technique of ion implanting etc keeps entire technique more simplified,
Reduce the possible additional impurities pollution of pilot process, improves the repeatability of technique.
As a kind of optional embodiment of the embodiment of the present invention, as shown in figure 3, semiconductor laser non-absorbing window
Preparation method can using following steps carry out:
S201: in the upper surface deposition mask layer 20 of semiconductor laser device epitaxial wafer 10；Structure after S201 is as schemed
Shown in 4A.
S202: using lithography and etching technique, forms Patterned masking layer 21 in 10 upper surface of epitaxial wafer；After S202
Structure it is as shown in Figure 4 B.
S203: the part of the non-cover graphics mask layer of epitaxial wafer 10 is subjected to etching in situ, is generated on bar shaped epitaxial wafer
Surface 11, obtains to diffusion region；Structure after S203 is as shown in Figure 4 C.
S204: diffusion source 30 is grown to diffusion zone in semiconductor laser device epitaxial wafer 10；Structure after S204
As shown in Figure 4 D.
S205: diffusion source 30 is diffused to diffusion zone, obtains diffusion region 40；Structure such as Fig. 4 E institute after S205
Show.
S206: the removal non-diffused diffusion source in diffusion region surface；Structure after S206 is as illustrated in figure 4f.
S207: growing wide band gap layer 50 on the surface of diffusion region, and wide band gap layer 50 and diffusion region 40 form non-absorbing window.
Structure after S207 is as shown in Figure 4 G.
In the embodiment of the present invention, above-mentioned steps S201 to step S207 and the process for forming semiconductor laser device epitaxial wafer
It can be carried out in same equipment, not need epitaxial wafer and repeatedly switch process equipment, be continually exposed in external environment,
Reduce influence of the introduced contaminants to device, wherein the different process in above-mentioned steps can be in the differential responses of same equipment
It is carried out in room.
The embodiment of the present invention also provides a kind of semiconductor laser non-absorbing window, which uses above-mentioned implementation
The production method preparation for the semiconductor laser non-absorbing window that example provides.
Semiconductor laser non-absorbing window provided in an embodiment of the present invention uses quantum well mixing technology and secondary outer
Prolong the mode that growth combines, first by the way of the impurity induced disordering diffusion in quantum well mixing technology, so that miscellaneous
Matter ion is diffused into semiconductor laser device epitaxial wafer, then by growing wide-band gap material on diffusion region, forms broad stopband
Layer, wide band gap layer and non-absorbing window together constitute non-absorbing window area.And in the prior art by impurity induced disordering
It when diffuseing to form the non-absorbing window of required thickness, needs at a high temperature of 800 degrees Celsius or more, it is more than hour to spread 10,
Repeatability and stability are all difficult to control.The present invention is combined using two ways, is diffused and is grown in same equipment
Wide-band gap material reduces diffusion depth when diffusion and diffusion time, at a high temperature of 800 degrees Celsius or more, diffusion time
It can solve the problems, such as that long-time high-temperature process caused wave length shift and penalty less than 1 hour, and improve the reliable of device
Property, reduce production cost.
In addition, needing the quantum of etched features when growing to form non-absorbing window area by secondary epitaxy in the prior art
Trap luminous zone, regrowth wide-band gap material, this process can generate impurity and fault in material, influence the luminous efficiency of Quantum Well.This
Invention, without etching Quantum Well luminous zone, reduces the influence of impurity and fault in material, mentions by the way of first spreading regrowth
The high luminous efficiency of Quantum Well.
The embodiment of the present invention also provides a kind of semiconductor laser, which includes provided by the above embodiment
Semiconductor laser non-absorbing window.
Semiconductor laser provided in an embodiment of the present invention, including non-absorbing window area, can eliminate semiconductor laser
Catastrophic optics cavity surface damage, and the preparation of non-absorbing window uses quantum well mixing technology and secondary epitaxy growth combines
Mode, first by the way of the impurity induced disordering diffusion in quantum well mixing technology, so that foreign ion is diffused into
In semiconductor laser device epitaxial wafer, then by growing wide-band gap material on diffusion region, form wide band gap layer, wide band gap layer and
Non-absorbing window together constitutes non-absorbing window area.And required thickness is diffuseed to form by impurity induced disordering in the prior art
It when the non-absorbing window of degree, needs at a high temperature of 800 degrees Celsius or more, diffusion 10 is more than hour, repeatability and stability
All it is difficult to control.The present invention is combined using two ways, and wide-band gap material is diffused and grown in same equipment, is reduced
Diffusion depth and diffusion time when diffusion, at a high temperature of 800 degrees Celsius or more, diffusion time can solve less than 1 hour
The problem of long-time high-temperature process causes wave length shift and penalty improves the reliability of device, reduces production cost.
In addition, needing the quantum of etched features when growing to form non-absorbing window area by secondary epitaxy in the prior art
Trap luminous zone, regrowth wide-band gap material, this process can generate impurity and fault in material, influence the luminous efficiency of Quantum Well.This
Invention, without etching Quantum Well luminous zone, reduces the influence of impurity and fault in material, mentions by the way of first spreading regrowth
The high luminous efficiency of Quantum Well.
Although being described in conjunction with the accompanying the embodiment of the present invention, those skilled in the art can not depart from the present invention
Spirit and scope in the case where make various modifications and variations, such modifications and variations are each fallen within by appended claims institute
Within the scope of restriction.
Claims (10)
1. a kind of preparation method of semiconductor laser non-absorbing window characterized by comprising
Diffusion source is grown to diffusion zone what the etching in situ of semiconductor laser device epitaxial wafer obtained；
The diffusion source is diffused to described to diffusion zone, obtains diffusion region；
Wide band gap layer is grown on the surface of diffusion region, the wide band gap layer and the diffusion region form non-absorbing window.
2. the preparation method of semiconductor laser non-absorbing window according to claim 1, which is characterized in that it is described
Semiconductor laser device epitaxial wafer to diffusion zone growth diffusion source before include:
In the upper surface deposition mask layer of the semiconductor laser device epitaxial wafer；
Using lithography and etching technique, Patterned masking layer is formed in the epitaxial wafer upper surface；
The part of the non-cover graphics mask layer of the epitaxial wafer is subjected to etching in situ, is obtained described to diffusion region.
3. the preparation method of semiconductor laser non-absorbing window according to claim 2, which is characterized in that described half
Include: before the upper surface deposition mask layer of conductor laser epitaxial wafer
Selected substrate；
Successively grown buffer layer, lower limit layer, lower waveguide layer, Quantum Well and barrier layer, upper ducting layer, the upper limit over the substrate
Preparative layer and ohmic contact layer form the epitaxial wafer.
4. the preparation method of semiconductor laser non-absorbing window according to claim 3, which is characterized in that will be described outer
The part for prolonging the non-cover graphics mask layer of piece carries out etching in situ and includes:
The part of the non-cover graphics mask layer of the epitaxial wafer is etched to and institute in the equipment for forming Patterned masking layer
State Quantum Well and barrier layer interval pre-determined distance；The pre-determined distance is 0-0.3 μm.
5. according to the preparation method of semiconductor laser non-absorbing window described in claim 2-4 any one, feature exists
In,
The part of the non-cover graphics mask layer of the epitaxial wafer is carried out etching and step in situ in semiconductor laser by step
Epitaxial wafer carries out in same equipment to diffusion zone growth diffusion source.
6. the preparation method of semiconductor laser non-absorbing window according to claim 1, which is characterized in that described by institute
It states diffusion source and diffuses to described to diffusion zone, obtain to diffusion region and include:
There is the semiconductor laser device epitaxial wafer in diffusion source to anneal in 600 DEG C -800 DEG C of atmosphere growth, wherein to move back
The fiery time was less than 1 hour.
7. the preparation method of semiconductor laser non-absorbing window according to claim 1, which is characterized in that incited somebody to action described
The diffusion source diffuses to described to diffusion zone and described grown between wide band gap layer on the surface of diffusion region includes:
Remove the non-diffused diffusion source in diffusion region surface.
8. the preparation method of semiconductor laser non-absorbing window according to claim 1, which is characterized in that in the expansion
It dissipates and grows wide band gap layer on area surface, comprising:
The wide-band gap material of p-type doping or n-type doping, the wide-band gap material and the exposure mask are grown on the surface of diffusion region
Layer, the upper limiting layer and ohmic contact layer form current barrier layer.
9. a kind of semiconductor laser non-absorbing window, which is characterized in that the non-absorbing window uses such as claim 1-8
The preparation method of described in any item semiconductor laser non-absorbing windows makes.
10. a kind of semiconductor laser, which is characterized in that including the non-absorbing window of semiconductor laser as claimed in claim 9
Mouthful.
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|---|---|---|---|---|
| CN114389152A (en) * | 2022-01-13 | 2022-04-22 | 中国科学院半导体研究所 | Epitaxial growth method of semiconductor laser |
| CN114389152B (en) * | 2022-01-13 | 2023-10-13 | 中国科学院半导体研究所 | Epitaxial growth method of semiconductor laser |
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