CN104752954A - Semiconductor laser manufactured by mixed zinc oxide quantum well and manufacturing method of semiconductor laser - Google Patents
Semiconductor laser manufactured by mixed zinc oxide quantum well and manufacturing method of semiconductor laser Download PDFInfo
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Abstract
The invention discloses a semiconductor laser manufactured by mixed zinc oxide quantum well and a manufacturing method of the semiconductor laser. The semiconductor laser comprises an epitaxial wafer; a strip-shaped lighting area is formed in the epitaxial wafer; an zinc oxide film layer develops on the upper surface of the epitaxial wafer and is divided into two parts, wherein the first part is used for inducing zinc oxide quantum well to mix and then forming non-absorbing windows in light outgoing cavity surfaces at two ends of the laser; the depth of the non-absorbing windows exceeds that of an active source in the epitaxial wafer; the second part is used for inducing zinc oxide quantum well to mix and then forming refraction rate light waveguide areas in two ends of the strip-shaped lighting area of the laser. The invention further discloses a manufacturing method of the semiconductor laser. With the adoption of the semiconductor laser, the problem that the side surface optical limitation and external electricity leakage of the lighting area cannot be avoided after manufacturing the non-absorbing windows by the quantum well mixing technology in the prior art can be solved.
Description
Technical field
The invention belongs to semiconductor laser apparatus technical field, be specifically related to a kind of semiconductor laser utilizing zinc oxide quantum well mixing to make, the invention still further relates to the manufacture method of this kind of laser.
Background technology
Semiconductor laser is wide with its wavelength chooses scope, volume is little, power consumption is little, efficiency is high, inheritance is good, low cost and other advantages becomes one of most important semiconductor photoelectronic device.Wherein high power semiconductor lasers is in field extensive application such as laser storage, laser display, laser printing, materials processing, laser marking, biomedicine, medicine equipment, space optical communications, also can be applicable to laser target shooting, laser guidance, laser night vision, laser radar, laser fuze, laser weapon, war simulation etc. in military field simultaneously.High power semiconductor lasers technology covers nearly all optoelectronic areas, development high-performance high power laser needs to start with from many-sided coordination the such as the design of laser epitaxial chip architecture, Material growth, element manufacturing, face, chamber optical coating, device package, Beam shaping and coupling, but the making of semiconductor laser device epitaxial wafer and chip is most crucial technology undoubtedly.
Concerning practical high power semiconductor lasers, not only to ensure that threshold current is low, power output is high, device lifetime is long, also require that semiconductor laser has good optical quality and light field pattern.But along with face, the chamber catastrophic optical damage damage occurred in the laser power-current characteristics of high power work and voltage-current characteristic, kink of a curve, heat are saturated, thermal breakdown, the phenomenon such as slowly aging in work, optical output power, the life and reliability of laser are usually restricted.Wherein, catastrophic optical damage damage is subject to the extensive concern of industry as one of main reason limiting high power semiconductor lasers development.
Catastrophic optical damage damage refers to when the optical power density of semiconductor laser exceedes certain critical value, the light output end face local temperature of device is made to reach the fusing point of semi-conducting material, thus cause the face, chamber of laser to be melted and quick recrystallization, this on the impact of laser operating efficiency be instantaneously, serious, completely destructive.Catastrophic optical damage damage belongs to irrecoverability damage, once there is catastrophic optical damage damage, whole device is all by complete failure, and thus it is the principal element of restriction high power semiconductor lasers power output and reliability.
For high power semiconductor lasers, mainly contain the generation that lower several method suppresses catastrophic optical damage to damage directly or indirectly.The first, near face, chamber, current blocking technology reduces the carrier injection of vicinity, face, chamber; The second, reduce the morphogenetic non-radiative recombination center density of face, chamber place's surface state or interface by passivating cavity surface technology, vacuum cleavage plated film etc.; 3rd, by wide waveguide, Large optical cavity structure, lighting area and hot spot are increased, reduces the optical density at face, chamber place; 4th, adopt tensile strain quantum well structure, twin shaft internal stress, at face, chamber place Spontaneous release, causes band gap broadening, reduces the light absorption in face, chamber; 5th, adopt non-absorbing window technology, make the band gap of face, chamber place active layer be greater than the energy swashing and penetrate photon, reduce the light absorption at face, chamber place, reach the object improving catastrophic optical damage damage power.The making of non-absorbing window can adopt repeatedly epitaxy technology and quantum well mixing technology.Repeatedly epitaxy technology is at a kind of band gap of face, chamber place's regrowth new material larger than chamber plane materiel material, but due to Material growth complex process, and the interfacial state control difficulty that new material and face, chamber place are formed is very large, the program does not obtain convictive practical function, and thus adopting quantum well mixing technology to make non-absorbing window is better selection.
Although adopt various types of quantum well mixing technology all successfully can produce non-absorbing window at face, the chamber place of strip structure high power semiconductor lasers, also effectively power output can be improved after parameter optimization, but the technique newly added is only non-absorbing window service, effect is single, can not form effective restriction in side, luminous zone to light.Simultaneously in order to reduce the pulse current injectingt outside non-light-emitting area, usually need again to make silica dioxide medium film, if the parameters such as deielectric-coating density are not good, just can there is certain leakage current in laser, affect its operating efficiency.The proposed by the invention strip structure high power semiconductor lasers utilizing zinc oxide quantum well mixing to make, possesses non-absorbing window and pulse current injectingt Resistance simultaneously.Non-absorbing window place reduces the light absorption at face place, laser nearly chamber, effectively improves the catastrophic optical damage damage threshold of laser, power output is significantly increased; What bar shaped light-emitting zone lateral side regions caused due to quantum well mixing can be with broadening, and its refractive index is reduced, and is just formed the low energy gap refractive index waveguide restriction in laser resonant cavity, greatly increases out optical property; The PN of N-type zinc-oxide film and laser defines NPN structure, greatly reduces current leakage, increases photoelectric conversion efficiency.
Summary of the invention
The object of this invention is to provide a kind of semiconductor laser utilizing zinc oxide quantum well mixing to make, solve after adopting quantum well mixing fabrication techniques non-absorbing window in prior art, the problem of leakage current outside side, luminous zone some optical confinement and luminous zone cannot be avoided.
Another object of the present invention is to provide the manufacture method of above-mentioned laser.
The technical solution adopted in the present invention is:
A kind of semiconductor laser utilizing zinc oxide quantum well mixing to make, comprise epitaxial wafer, epitaxial wafer is provided with bar shaped light-emitting zone, the upper surface growth of epitaxial wafer has zinc oxide thin layer, zinc oxide films rete is divided into two parts, wherein the sub-trap of Part I zinc oxide films rete inducing amount forms non-absorbing window at the emitting cavity face place at laser two ends after mixing, the degree of depth of non-absorbing window exceedes the active area in epitaxial wafer, forms index optical waveguide region after the sub-trap of Part II zinc oxide films rete inducing amount mixes at the two ends of laser bar shaped light-emitting zone.
Feature of the present invention is also:
The concrete structure of epitaxial wafer set gradually from top to bottom into: substrate, resilient coating, lower limit layer, lower waveguide layer, quantum well and quantum build the active area of district's composition, upper ducting layer, upper limiting layer and upper ohmic contact layer, and bar shaped light-emitting zone is arranged on the longitudinal centre line place of ohmic contact layer.
The bar shaped light-emitting zone surrounding of zinc oxide films coating growth on eroding after ohmic contact layer, the thickness of zinc oxide films rete is equal with the thickness of upper ohmic contact layer, Part I zinc oxide films rete is zinc oxide films rete a, Part II zinc oxide films rete is zinc oxide films rete b, zinc oxide films rete a adjoins bar shaped light-emitting zone and is positioned at the two ends place of bar shaped light-emitting zone longitudinal direction, and zinc oxide films rete b adjoins bar shaped light-emitting zone and is positioned at the two ends place of bar shaped light-emitting zone transverse direction.
The central area of non-absorbing window overlaps with the central area of bar shaped light-emitting zone, the width of non-absorbing window is more than or equal to the width of bar shaped light-emitting zone, and the degree of depth of non-absorbing window is build active area and the part lower waveguide layer of district's composition successively through part upper ducting layer, whole quantum well and quantum.
The bottom surface of substrate is manufactured with N face electrode, bar shaped light-emitting zone, zinc oxide films rete a and zinc oxide films rete b are manufactured with p side electrode simultaneously, the NPN structure that the doping of the N-type of zinc oxide films rete a and zinc oxide films rete b and upper limiting layer and substrate, resilient coating, lower limit layer formation block current flow are passed through.
Another technical scheme of the present invention is,
The manufacture method of the semiconductor laser utilizing zinc oxide quantum well mixing to make, specifically implement according to following steps:
Step 1, selected substrate;
Step 2, adopt Metalorganic Chemical Vapor Deposition on substrate successively grown buffer layer, lower limit layer, lower waveguide layer, quantum well and quantum build district, on ducting layer, upper limiting layer and upper ohmic contact layer, namely form the epitaxial wafer of laser;
Step 3, the laser epitaxial sheet superficial growth zinc oxide films rete a utilizing sputtering method to be formed in step 2 and zinc oxide films rete b;
Step 4, making non-absorbing window and index optical waveguide region;
Step 5, employing sputtering technology make p side electrode, then after attenuated polishing being carried out to substrate, evaporation technology is adopted to make N face electrode in the bottom surface of substrate again, and then carry out laser bar bar cleavage, finally adopt evaporation technology to carry out cavity surface film coating to laser again, namely complete the making of this semiconductor laser.
The feature of another technical scheme of the present invention is also,
Step 3 is specifically implemented according to following steps:
Step 3.1, grow the silica dioxide medium film of one deck densification at the upper ohmic contact layer upper surface of laser epitaxial sheet;
Step 3.2, employing photoetching technique form bar shaped light-emitting zone at the longitudinal centre line place of upper ohmic contact layer, then with the silica dioxide medium film outside hydrofluoric acid solution corrosion bar shaped light-emitting zone;
Step 3.3, adopt the method for wet etching to erode the upper ohmic contact layer of bar shaped light-emitting zone surrounding, and control corrosion depth well and guarantee that it is the thickness of upper ohmic contact layer;
Step 3.4, the laser epitaxial sheet through above step process is put in sputtering chamber, sputtering zinc oxide target under the mixed atmosphere of argon gas and oxygen, at epitaxial wafer superficial growth zinc-oxide film, and the thickness of controlled oxidization zinc thin layer a and zinc oxide films rete b equals thickness 200 nanometer of ohmic contact layer;
Step 3.5, utilize photoresist to do protective layer, the zinc-oxide film adopting hydrochloric acid solution to erode bar shaped light-emitting zone to grow above, and retain zinc oxide films rete a and zinc oxide films rete b.
Step 4 is specifically implemented according to following steps:
Step 4.1, erode remaining silica dioxide medium film on epitaxial wafer and cleaned epitaxial wafer with hydrofluoric acid solution;
Step 4.2, the epitaxial wafer cleaned through step 4.1 put in quick anneal oven and heat-treats, in heat treatment process, after zinc oxide films rete a induces quantum well mixing, successively through after upper ohmic contact layer, upper limiting layer, form non-absorbing window at the emitting cavity face place at laser two ends; Simultaneous oxidation zinc thin layer b forms index optical waveguide region at the two ends of laser bar shaped light-emitting zone after inducing quantum well mixing.
In step 4.2, heat treated temperature is 600-850 degree, and the time is 30-200 second.
P side electrode in step 5 is made on bar shaped light-emitting zone, zinc oxide films rete a and zinc oxide films rete b simultaneously.
The invention has the beneficial effects as follows,
1) zinc-oxide film being distributed in laser cavity surface two ends can make the active area under it form the non-absorbing window of light after quantum well mixing, because the energy gap in non-absorbing window region broadens, the output light of this relative laser device inside, region is absorbed hardly, this will increase the catastrophic optical damage damage threshold of laser greatly, effectively improve the power output of semiconductor laser.
2) zinc-oxide film of laser diode bar shape light-emitting zone both sides growth is after carrying out quantum well mixing, its lower active area band gap carries out broadening, this makes the refractive index of light-emitting zone side diminish, the index waveguide of guided wave better effects if can be formed, improve Optical confinement factor, improve light field pattern, increase luminous efficiency.
3) because there is more Lacking oxygen in Zinc oxide film material, it is made to present N-type conduction type, NPN structure is formed by with the P-type layer in laser epitaxial structure and N-type layer at the zinc-oxide film of semiconductor laser luminous zone surrounding growth, when the additional forward voltage of device, electric current mainly passes through from the PN junction of luminous zone, this greatly reduces leakage current, improve the photoelectric conversion efficiency of device.
4) traditional stripe-geometry semiconductor laser many employings silica membrane is as electrical pumping barrier layer; such dielectric film has poor thermal conductivity; the shortcoming that compactness is bad; thus often its heat dissipation channel can be affected in the encapsulation of device flip chip bonding; adopt its relatively high thermal conductivity behind zinc-oxide film replacement of silicon dioxide electrical pumping barrier layer can improve the temperature characterisitic of device, the leakage current of device when the high-compactness of its material also can reduce hot operation.
5) zinc-oxide film can adopt the kinds of processes growths such as extension, sputtering, evaporation; quantum well mixing realizes mainly through rapid thermal annealing; thus the strip structure high power semiconductor lasers utilizing zinc oxide quantum well mixing to make of the present invention; manufacture craft is simple; good with existing processing compatibility; do not affect the cavity surface film coating technique of laser after making non-absorbing window, additionally can not increase cost, there is large-scale production feature yet.
Accompanying drawing explanation
Fig. 1 is the structural representation of the 808nm strip structure high power semiconductor lasers utilizing zinc oxide quantum well mixing to make in the embodiment of the present invention 1.
In figure, 1. substrate, 2. resilient coating, 3. lower limit layer, 4. lower waveguide layer, 5. quantum well and quantum build district, 6. go up ducting layer, 7. upper limiting layer, 8. go up ohmic contact layer, 9. bar shaped light-emitting zone, 10. non-absorbing window, 11. zinc-oxide film a, 12. zinc-oxide film b.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the present invention is described in further detail:
The 808nm strip structure high power semiconductor lasers that embodiment 1 makes for utilizing zinc oxide quantum well mixing, its structure as shown in Figure 1, comprise epitaxial wafer, the concrete structure of epitaxial wafer set gradually from top to bottom into: substrate 1, resilient coating 2, lower limit layer 3, lower waveguide layer 4, quantum well and quantum build district 5, upper ducting layer 6, upper limiting layer 7 and upper ohmic contact layer 8.The longitudinal centre line place of upper ohmic contact layer 8 is provided with bar shaped light-emitting zone 9, bar shaped light-emitting zone 9 surrounding is the zinc oxide films rete grown after eroding ohmic contact layer 8, the thickness of zinc oxide films rete is equal with the thickness of upper ohmic contact layer 8, zinc oxide films rete is divided into zinc oxide films rete a11 and zinc oxide films rete b12, zinc oxide films rete a11 adjoins bar shaped light-emitting zone 9 and is positioned at the two ends place of bar shaped light-emitting zone 9 longitudinal direction, and zinc oxide films rete b12 adjoins bar shaped light-emitting zone 9 and is positioned at the two ends place of bar shaped light-emitting zone 9 transverse direction.After zinc oxide films rete a11 induces quantum well mixing, successively through after upper ohmic contact layer 8, upper limiting layer 7, non-absorbing window 10 is formed at the emitting cavity face place at laser two ends, the central area of non-absorbing window 10 overlaps with the central area of bar shaped light-emitting zone 9, the width of non-absorbing window 10 is more than or equal to the width of bar shaped light-emitting zone 9, and the degree of depth of non-absorbing window 10 is build district 5 and part lower waveguide layer 4 through part upper ducting layer 6, whole quantum well and quantum successively.Zinc oxide films rete b12 forms index optical waveguide region at the two ends place of laser bar shaped light-emitting zone 9 after inducing quantum well mixing, N face electrode is manufactured with in the bottom surface of substrate 1, bar shaped light-emitting zone 9, zinc oxide films rete a11 and zinc oxide films rete b12 are manufactured with p side electrode simultaneously, and the doping of the N-type of zinc oxide films rete a11 and zinc oxide films rete b12 and upper limiting layer 7 and substrate 1, resilient coating 2, lower limit layer 3 form the NPN structure that block current flow is passed through.
The manufacture method of the above-mentioned semiconductor laser utilizing zinc oxide quantum well mixing to make specifically is implemented according to following steps:
Step 1, choose N-type GaAs substrate 1;
Step 2, adopt Metalorganic Chemical Vapor Deposition on substrate 1 successively grown buffer layer 2, lower limit layer 3, lower waveguide layer 4, quantum well and quantum build district 5, upper ducting layer 6, upper limiting layer 7 and upper ohmic contact layer 8, namely form the epitaxial slice structure of laser;
Step 3, utilize sputtering method growing zinc oxide film layer a11 and zinc oxide films rete b12;
This step is specifically implemented according to following steps:
Step 3.1, grow the silica dioxide medium film of one deck densification at upper ohmic contact layer 8 upper surface of laser epitaxial sheet;
Step 3.2, employing photoetching technique form bar shaped light-emitting zone 9 at the longitudinal centre line place of upper ohmic contact layer 8, then with the silica dioxide medium film outside hydrofluoric acid solution corrosion bar shaped light-emitting zone 9;
Step 3.3, adopt the method for wet etching to erode the upper ohmic contact layer 8 of bar shaped light-emitting zone 9 surrounding, and control corrosion depth well and guarantee that it is the thickness of upper ohmic contact layer 8;
Step 3.4, the laser epitaxial sheet through above step process is put in sputtering chamber, sputtering zinc oxide target under the mixed atmosphere of argon gas and oxygen, at epitaxial wafer superficial growth zinc-oxide film, and the thickness of controlled oxidization zinc thin layer a11 and zinc oxide films rete b12 equals thickness 200 nanometer of ohmic contact layer 8;
Step 3.5, utilize photoresist to do protective layer, the zinc-oxide film adopting hydrochloric acid solution to erode bar shaped light-emitting zone 9 to grow above, and retain zinc oxide films rete a11 and zinc oxide films rete b12;
Step 4, making non-absorbing window 10 and index optical waveguide region;
This step is specifically implemented according to following steps:
Step 4.1, erode remaining silica dioxide medium film on epitaxial wafer and cleaned epitaxial wafer with hydrofluoric acid solution;
Step 4.2, the epitaxial wafer cleaned through step 4.1 put in quick anneal oven and heat-treats, in heat treatment process, after zinc oxide films rete a11 induces quantum well mixing, successively through after upper ohmic contact layer 8, upper limiting layer 7, form non-absorbing window 10 at the emitting cavity face place at laser two ends; Simultaneous oxidation zinc thin layer b12 forms index optical waveguide region at the two ends place of laser bar shaped light-emitting zone 9 after inducing quantum well mixing;
Above-mentioned heat treated temperature is 600-850 degree, and the time is 30-200 second;
Step 5, employing sputtering technology make p side electrode on bar shaped light-emitting zone 9, zinc oxide films rete a11 and zinc oxide films rete b12 simultaneously, after attenuated polishing is carried out to substrate 1, evaporation technology is adopted to make N face electrode in the bottom surface of substrate 1, and after making p side electrode, N face electrode, the N-type doping of zinc oxide films rete a11, zinc oxide films rete b12 and upper limiting layer 7, substrate 1, resilient coating 2, lower limit layer 3 just form the NPN structure that block current flow is passed through; And then carry out laser bar bar cleavage, finally adopt evaporation technology to carry out cavity surface film coating to laser again, namely complete the making of this semiconductor laser.
In the embodiment of the present invention 1, the width of whole semiconductor laser is 600 microns, and chamber length is 1200 microns; Wherein, to grow the resilient coating 2 that obtains be thickness is the GaAs of 300 nanometers, the gallium aluminium arsenic of lower limit layer 3 to be thickness be 1400 nanometers, the gallium aluminium arsenic of lower waveguide layer 4 to be thickness be 70 nanometers, the gallium aluminium arsenic quantum of to be thickness be 10 nanometers that quantum well and quantum build district 5 builds the active area that district and thickness are the Al-Ga-In-As single quantum well composition of 9 nanometers, the gallium aluminium arsenic of upper ducting layer 6 to be thickness be 70 nanometers, the gallium aluminium arsenic of upper limiting layer 7 to be thickness be 1400 nanometers, the GaAs of upper ohmic contact layer 8 to be thickness be 200 nanometers.The width of bar shaped light-emitting zone 9 is 100 microns, and the length of the non-absorbing window 10 at two ends is identical is 50 microns.
The 808nm strip structure high power semiconductor lasers utilizing zinc oxide quantum well mixing to make in the embodiment of the present invention 1, zinc-oxide film is positioned at the surrounding of laser bar shaped light-emitting zone 9, wherein zinc oxide films rete a11 forms non-absorbing window 10 at face, the chamber place of laser after quantum well mixing, the output light of non-absorbing window 10 pairs of laser inside absorbs hardly, this just considerably increases the catastrophic optical damage damage threshold of laser, effectively improves the power output of semiconductor laser; Zinc oxide films rete b12 forms index optical waveguide region at the two ends place of laser bar shaped light-emitting zone after quantum well mixing, can improve Optical confinement factor, improve light field pattern, increase luminous efficiency; The N-type doping of zinc-oxide film forms the NPN structure passed through of block current flow by with the PN junction in the laser structure it under, greatly reduces leakage current, the photoelectric conversion efficiency of raising device.Behind simultaneous oxidation zinc film replacement of silicon dioxide electrical pumping barrier layer, its relatively high thermal conductivity can improve the temperature characterisitic of device, the leakage current of device when the high-compactness of its material also can reduce hot operation.Strip structure high power semiconductor lasers delicate structure of the present invention, technique is simple, and existing process compatible, is applicable to large-scale production.
The high power semiconductor lasers of above-described embodiment 1 grows to be made on gallium arsenide substrate material, the material of this high power semiconductor lasers can also select GaAs based material, indium phosphide based material, gallium nitride based material or gallium antimonide based material, and organic semiconductor, nano material or low-dimensional materials.
Claims (10)
1. utilize the semiconductor laser that zinc oxide quantum well mixing makes, it is characterized in that, comprise epitaxial wafer, epitaxial wafer is provided with bar shaped light-emitting zone (9), the upper surface growth of epitaxial wafer has zinc oxide thin layer, zinc oxide films rete is divided into two parts, wherein the sub-trap of Part I zinc oxide films rete inducing amount forms non-absorbing window (10) at the emitting cavity face place at laser two ends after mixing, the degree of depth of non-absorbing window (10) exceedes the active area in epitaxial wafer, index optical waveguide region is formed at the two ends of laser bar shaped light-emitting zone (9) after the sub-trap of Part II zinc oxide films rete inducing amount mixes.
2. the semiconductor laser utilizing zinc oxide quantum well mixing to make according to claim 1, it is characterized in that, the concrete structure of described epitaxial wafer set gradually from top to bottom for: substrate (1), resilient coating (2), lower limit layer (3), lower waveguide layer (4), quantum well and quantum build active area that district (5) forms, upper ducting layer (6), upper limiting layer (7) and upper ohmic contact layer (8), and described bar shaped light-emitting zone (9) is arranged on the longitudinal centre line place of ohmic contact layer (8).
3. the semiconductor laser utilizing zinc oxide quantum well mixing to make according to claim 2, it is characterized in that, bar shaped light-emitting zone (9) surrounding of described zinc oxide films coating growth on eroding after ohmic contact layer (8), the thickness of zinc oxide films rete is equal with the thickness of upper ohmic contact layer (8), described Part I zinc oxide films rete is zinc oxide films rete a (11), described Part II zinc oxide films rete is zinc oxide films rete b (12), zinc oxide films rete a (11) adjoins bar shaped light-emitting zone (9) and is positioned at the longitudinal two ends place of bar shaped light-emitting zone (9), zinc oxide films rete b (12) adjoins bar shaped light-emitting zone (9) and is positioned at the horizontal two ends place of bar shaped light-emitting zone (9).
4. the semiconductor laser utilizing zinc oxide quantum well mixing to make according to claim 3, it is characterized in that, the central area of described non-absorbing window (10) overlaps with the central area of bar shaped light-emitting zone (9), the width of non-absorbing window (10) is more than or equal to the width of bar shaped light-emitting zone (9), and the degree of depth of non-absorbing window (10) is pass the active area and part lower waveguide layer (4) that in part, ducting layer (6), whole quantum well and quantum base district (5) form successively.
5. the semiconductor laser utilizing zinc oxide quantum well mixing to make according to claim 3, it is characterized in that, the bottom surface of described substrate (1) is manufactured with N face electrode, bar shaped light-emitting zone (9), zinc oxide films rete a (11) and zinc oxide films rete b (12) are manufactured with p side electrode simultaneously, the NPN structure that the doping of the N-type of zinc oxide films rete a (11) and zinc oxide films rete b (12) and upper limiting layer (7) and substrate (1), resilient coating (2), lower limit layer (3) formation block current flow are passed through.
6. the manufacture method of the semiconductor laser utilizing zinc oxide quantum well mixing to make, is characterized in that, specifically implements according to following steps:
Step 1, selected substrate (1);
Step 2, adopt Metalorganic Chemical Vapor Deposition on substrate (1) successively grown buffer layer (2), lower limit layer (3), lower waveguide layer (4), quantum well and quantum build district (5), upper ducting layer (6), upper limiting layer (7) and upper ohmic contact layer (8), namely form the epitaxial wafer of laser;
Step 3, laser epitaxial sheet superficial growth zinc oxide films rete a (11) utilizing sputtering method to be formed in step 2 and zinc oxide films rete b (12);
Step 4, making non-absorbing window (10) and index optical waveguide region;
Step 5, employing sputtering technology make p side electrode, then after attenuated polishing being carried out to substrate (1), evaporation technology is adopted to make N face electrode in the bottom surface of substrate (1) again, and then carry out laser bar bar cleavage, finally adopt evaporation technology to carry out cavity surface film coating to laser again, namely complete the making of this semiconductor laser.
7. the manufacture method of the semiconductor laser utilizing zinc oxide quantum well mixing to make according to claim 6, it is characterized in that, described step 3 is specifically implemented according to following steps:
Step 3.1, grow the silica dioxide medium film of one deck densification at upper ohmic contact layer (8) upper surface of laser epitaxial sheet;
Step 3.2, employing photoetching technique form bar shaped light-emitting zone (9) at the longitudinal centre line place of upper ohmic contact layer (8), then with hydrofluoric acid solution corrosion bar shaped light-emitting zone (9) silica dioxide medium film outward;
Step 3.3, adopt the method for wet etching to erode the upper ohmic contact layer (8) of bar shaped light-emitting zone (9) surrounding, and control corrosion depth well and guarantee that it is the thickness of upper ohmic contact layer (8);
Step 3.4, the laser epitaxial sheet through above step process is put in sputtering chamber, sputtering zinc oxide target under the mixed atmosphere of argon gas and oxygen, at epitaxial wafer superficial growth zinc-oxide film, and the thickness of controlled oxidization zinc thin layer a (11) and zinc oxide films rete b (12) equals thickness 200 nanometer of ohmic contact layer (8);
Step 3.5, utilize photoresist to do protective layer, the zinc-oxide film adopting hydrochloric acid solution to erode bar shaped light-emitting zone (9) to grow above, and retain zinc oxide films rete a (11) and zinc oxide films rete b (12).
8. the manufacture method of the semiconductor laser utilizing zinc oxide quantum well mixing to make according to claim 6, it is characterized in that, described step 4 is specifically implemented according to following steps:
Step 4.1, erode remaining silica dioxide medium film on epitaxial wafer and cleaned epitaxial wafer with hydrofluoric acid solution;
Step 4.2, the epitaxial wafer cleaned through step 4.1 put in quick anneal oven and heat-treats, in heat treatment process, after zinc oxide films rete a (11) induces quantum well mixing, successively through after upper ohmic contact layer (8), upper limiting layer (7), form non-absorbing window (10) at the emitting cavity face place at laser two ends; Index optical waveguide region is formed at the two ends of laser bar shaped light-emitting zone (9) after simultaneous oxidation zinc thin layer b (12) induction quantum well mixing.
9. the manufacture method of the semiconductor laser utilizing zinc oxide quantum well mixing to make according to claim 8, is characterized in that, in described step 4.2, heat treated temperature is 600-850 degree, and the time is 30-200 second.
10. the manufacture method of the semiconductor laser utilizing zinc oxide quantum well mixing to make according to claim 6, it is characterized in that, the p side electrode in described step 5 is made on bar shaped light-emitting zone (9), zinc oxide films rete a (11) and zinc oxide films rete b (12) simultaneously.
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| CN110600996A (en) * | 2019-09-26 | 2019-12-20 | 苏州矩阵光电有限公司 | Quantum well layer structure, semiconductor laser and preparation method |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020185643A1 (en) * | 2001-04-03 | 2002-12-12 | Shiro Uchida | Semiconductor laser device and fabrication method thereof |
| CN1417908A (en) * | 2001-11-06 | 2003-05-14 | 中国科学院半导体研究所 | Method of forming non-absorbing window of gallium arsenide/potassium arsenic aluminate laser diode |
| WO2004063808A1 (en) * | 2003-01-15 | 2004-07-29 | Matsushita Electric Industrial Co., Ltd. | Optical waveguide device, optical waveguide laser using same and optical apparatus having same |
| CN101114757A (en) * | 2006-07-28 | 2008-01-30 | 中国科学院半导体研究所 | High-power 650nm quantum well semiconductor laser and method for mfg. the same |
| CN102891435A (en) * | 2012-09-25 | 2013-01-23 | 西安理工大学 | High-power semiconductor laser with non-absorbing windows |
| CN102916338A (en) * | 2012-10-10 | 2013-02-06 | 长春理工大学 | Simple method for increasing COD (chemical oxygen demand) threshold of semiconductor laser |
-
2015
- 2015-03-23 CN CN201510128470.0A patent/CN104752954B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020185643A1 (en) * | 2001-04-03 | 2002-12-12 | Shiro Uchida | Semiconductor laser device and fabrication method thereof |
| CN1417908A (en) * | 2001-11-06 | 2003-05-14 | 中国科学院半导体研究所 | Method of forming non-absorbing window of gallium arsenide/potassium arsenic aluminate laser diode |
| WO2004063808A1 (en) * | 2003-01-15 | 2004-07-29 | Matsushita Electric Industrial Co., Ltd. | Optical waveguide device, optical waveguide laser using same and optical apparatus having same |
| CN101114757A (en) * | 2006-07-28 | 2008-01-30 | 中国科学院半导体研究所 | High-power 650nm quantum well semiconductor laser and method for mfg. the same |
| CN102891435A (en) * | 2012-09-25 | 2013-01-23 | 西安理工大学 | High-power semiconductor laser with non-absorbing windows |
| CN102916338A (en) * | 2012-10-10 | 2013-02-06 | 长春理工大学 | Simple method for increasing COD (chemical oxygen demand) threshold of semiconductor laser |
Non-Patent Citations (1)
| Title |
|---|
| F.RINNER ET AL.: "Facet temperature reduction by a current blocking layer at the front facets of high-power InGaAs/AlGaAs lasers", 《JOURNAL OF APPLIED PHYSICS》 * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108847575A (en) * | 2018-07-16 | 2018-11-20 | 中国科学院半导体研究所 | The preparation method and semiconductor laser of semiconductor laser non-absorbing window |
| CN108847575B (en) * | 2018-07-16 | 2020-02-21 | 中国科学院半导体研究所 | Preparation method of non-absorption window of semiconductor laser and semiconductor laser |
| CN109921277A (en) * | 2019-04-10 | 2019-06-21 | 苏州长光华芯光电技术有限公司 | Eliminate the method and semiconductor laser of semiconductor laser COMD |
| CN110061416A (en) * | 2019-04-12 | 2019-07-26 | 苏州长光华芯光电技术有限公司 | Semiconductor laser non-absorbing window and preparation method thereof and semiconductor laser |
| CN110600996A (en) * | 2019-09-26 | 2019-12-20 | 苏州矩阵光电有限公司 | Quantum well layer structure, semiconductor laser and preparation method |
| CN112615252A (en) * | 2020-12-03 | 2021-04-06 | 中国工程物理研究院应用电子学研究所 | Semiconductor laser and optical fiber coupling structure |
| CN113206448A (en) * | 2021-04-30 | 2021-08-03 | 中国科学院半导体研究所 | Laser with current barrier layer |
| CN114122914A (en) * | 2021-11-11 | 2022-03-01 | 中国科学院半导体研究所 | Laser and preparation method thereof |
| CN116417905A (en) * | 2023-06-08 | 2023-07-11 | 深圳市星汉激光科技股份有限公司 | Structure of laser with PN junction non-injection layer and preparation method thereof |
| CN116417905B (en) * | 2023-06-08 | 2023-08-18 | 深圳市星汉激光科技股份有限公司 | Structure of laser with PN junction non-injection layer and preparation method thereof |
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