CN107404067A - Silicon substrate GaN laser based on distributed bragg reflector mirror waveguide microcavity - Google Patents
Silicon substrate GaN laser based on distributed bragg reflector mirror waveguide microcavity Download PDFInfo
- Publication number
- CN107404067A CN107404067A CN201710518114.9A CN201710518114A CN107404067A CN 107404067 A CN107404067 A CN 107404067A CN 201710518114 A CN201710518114 A CN 201710518114A CN 107404067 A CN107404067 A CN 107404067A
- Authority
- CN
- China
- Prior art keywords
- gan
- layer
- distributed bragg
- bragg reflector
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
Abstract
The invention belongs to information material and devices field, there is provided a kind of silicon substrate GaN laser based on distributed bragg reflector mirror waveguide microcavity and preparation method thereof.The laser is using silica-based nitride chip as carrier, including layer-of-substrate silicon, the epitaxial buffer layer being arranged in the layer-of-substrate silicon, the p n knot quantum well devices that are arranged on the epitaxial buffer layer, the SiO being arranged on p n knot quantum well devices2Insulating barrier, it is arranged on the SiO2The lead electrode district of p electrodes on insulating barrier and the lead electrode district and distributed bragg reflector mirror of n electrodes.The present invention utilizes FIB technique, the distributed bragg reflector mirror structure of pairing is processed in InGaN waveguides, form micro-cavity structure, obtain the silicon substrate GaN laser based on distributed bragg reflector mirror waveguide microcavity, and AlN/AlGaN stress regulation and control buffer layer techniques are combined, realize electric pump silicon substrate GaN laser；Available for visible light communication, display and sensory field.
Description
Technical field
The invention belongs to information material and devices field, it is related to a kind of based on distributed bragg reflector mirror waveguide microcavity
Silicon substrate GaN laser and its technology of preparing.
Background technology
Semiconductor laser, also known as laser diode (Laser Diode, LD), its principle is by certain excitation side
Formula (electrical pumping, optical pumping or high-power electron beam injection), in leading to between or between band and impurity energy level for semiconductor substance
Cross and excite nonequilibrium carrier and realize population inversion, so as to produce the effect of the stimulated emission of light.
LD core luminous component is PN junction, will when the minority carrier and majority carrier compound tense of injection PN junction
Send visible ray；LD important component is resonator, i.e., is pressed by the speculum of certain geometrical shape and optical reflective characteristics
Specific mode combines, and the photon of intracavitary can be made to vibrate, feed back, the radiation for producing light is amplified and exports laser.Resonator
Act as：1. providing bulk of optical feedback ability, stimulated radiation photon is set repeatedly to be come and gone in intracavitary to form relevant persistent oscillation.
2. the direction of light beam is vibrated to intracavity round trip and frequency limits, to ensure that output laser has certain directionality and monochrome
Property.
From the point of view of material angle, nitride material particularly GaN material, there is higher refractive index (~2.5), visible
Light, near infrared band are transparent, are a kind of excellent optical materials.However, due to SiC and Sapphire Substrate not easy processing, and nitrogen
Compound particularly GaN process technology is also immature, limits the development of nitride photonic and optical MEM device.In recent years
Come, it is inconsistent caused residual to make up lattice mismatch and thermal expansion by introducing the exclusive cushions of AlN/AlGaN or other
Residue stress, the high quality nitride material based on silicon substrate is increasingly mature, progressively moves towards market.
The present invention carries out high-precision micro-nano to the high-quality GaN material based on silicon substrate using semiconducter process and added
Work, with reference to AlN/AlGaN stress regulation and control buffer layer techniques, using AlGaN as the low-refraction integument of InGaN waveguides, and
Top layer nitride device layers form the waveguide micro-cavity structure based on distributed bragg reflector mirror, and integrated InGaN/GaN quantum
Trap diode, realize electric pump silicon substrate GaN k lasers.The laser has good optical property, and the portion of the laser
Divide procedure of processing to be substituted by the semiconducter process of technical grade, therefore be easy to research and development processing, cost control and volume production finished product
The content of the invention
In view of above-mentioned technical problem in the prior art be present, the present invention provides one kind and is based on distributed bragg reflector mirror ripple
Silicon substrate GaN laser of microcavity and preparation method thereof is led, laser combination distributed bragg reflector mirror design and FIB are micro-
Receive process technology, using AlGaN layer as the low-refraction clad of GaN waveguides, micro-cavity structure is realized in GaN waveguides.Together
When, the present invention overcomes the deep processing problem of GaN micro-nano structures by focused-ion-beam lithography (FIB) technology.What the present invention used
Technical scheme is as described below.
The present invention provides a kind of silicon substrate GaN laser based on distributed bragg reflector mirror waveguide microcavity, with silicon substrate
Nitride wafers are carrier, including layer-of-substrate silicon 1, be arranged in the layer-of-substrate silicon 1 epitaxial buffer layer 2, be arranged on it is described
P-n junction quantum well devices on epitaxial buffer layer 2, the SiO being arranged on the p-n junction quantum well devices2Insulating barrier 6, set
In the SiO2The lead electrode district 5 of p- electrodes on insulating barrier 6 and the lead electrode district 11 of n- electrodes, and distributed Bragg
Speculum 4；The p-n junction quantum well devices include n-GaN layers 3, n- electrodes 11, AlGaN integuments 8, InGaN waveguides 9,
InGaN/GaN SQWs (MQWs) layer 10, p-GaN layer 7 and p- electrodes 5；The upper surface of n-GaN layers 3 is the rank that etching is formed
Scalariform table top, the stepped table top include following table and upper table surface, and the n- electrodes 11 are arranged on following table, described
AlGaN integuments 8, InGaN ducting layers 9, InGaN/GaN SQWs (MQWs) layer 10, InGaN waveguides 9, AlGaN integuments 8,
P-GaN layer 7 and p- electrodes 5 are sequentially connected the top for being arranged on upper table surface from bottom to up；The distributed bragg reflector mirror 4 is
Directly at the both ends of the upper table surface from the SiO2The InGaN ducting layers 9 that insulating barrier 6 is etched to lower section separately down obtain
, the distributed bragg reflector mirror 4 symmetrically matches distribution at the both ends of upper table surface, forms Resonant Microcavity Architecture.
The present invention also provides the preparation of the above-mentioned silicon substrate GaN laser based on distributed bragg reflector mirror waveguide microcavity
Method, the preparation method comprise the following steps：
Step (1) carries out attenuated polishing after silica-based nitride wafer back to layer-of-substrate silicon 1；
Step (2) is uniformly coated with one layer of photoresist in silica-based nitride upper wafer surface, using lithography alignment technology in light
N-GaN3 stepped areas are defined on photoresist layer, the n-GaN stepped areas include following table and upper table surface；
Step (3) uses reactive ion beam etching (RIBE) n-GaN stepped areas, obtains stepped table top；
Step (4) is uniformly coated with one layer of photoresist in silica-based nitride upper wafer surface, using lithography alignment technology, definition
The p- electrode window through ray region that goes out in the p-GaN layer 7, positioned at the n- electrode window through ray region of the following table of n-GaN layers 3；
Ni/Au is deposited in the p- electrode window through ray region and n- electrode window through ray region in step (5) respectively, forms ohm and connects
Touch, realize p- electrodes and n- electrodes, after removing residual photoresist, that is, obtain p-n junction quantum well devices；
Step (6) is in silica-based nitride upper wafer surface homoepitaxial SiO2Insulating barrier 6, isolation both positive and negative polarity region；
Step (7) is in SiO2The Top electrode region openings of insulating barrier 6, and lead electrodes 5 of the Au as p- electrodes is deposited, simultaneously
The electrode material of same thickness is plated at n- electrode window through ray, the lead electrode 11 as n- electrodes；
Step (8) uses focused-ion-beam lithography (FIB) technology, directly performs etching, is processed at InGaN waveguides both ends
The distributed bragg reflector mirror 4 of pairing, micro-cavity structure is formed, obtains the silicon based on distributed bragg reflector mirror waveguide microcavity
Substrate GaN laser.
In the step (7), the evaporation is realized using stripping technology and temperature control in 600 DEG C of CDA annealing technologies.
In above-mentioned preparation process, the silica-based nitride chip of use include from top to bottom p-GaN layer 7, AlGaN integuments 8,
It is InGaN ducting layers 9, InGaN/GaN SQWs (MQWs) layer 10, InGaN ducting layers 9, AlGaN integuments 8, n-GaN layers 3, slow
Rush layer 2 and layer-of-substrate silicon 1.
AlN/AlGaN stress regulation and control buffer layer techniques are used in the present invention, the low refraction of GaN waveguides is used as using AlGaN layer
Rate clad, to make up lattice mismatch and the inconsistent caused residual stress of thermal expansion, and direct growth is sunk on a silicon substrate
The GaN base waveguiding structure of product high quality.
The present invention utilizes focused-ion-beam lithography (FIB) technology, and processing pairing distributed Bragg is anti-in InGaN waveguides
Mirror structure is penetrated, forms micro-cavity structure；The luminous light of prepared distributed bragg reflector mirror matching SQW diode component
Spectrum, realizes electric pump silicon substrate GaN laser；The structural parameters or matching side of distributed bragg reflector mirror device can be changed
Formula, regulate and control microcavity, realize the silicon substrate GaN laser of Wavelength tunable.
The present invention has plated one layer of SiO2Insulating barrier, effect are isolation both positive and negative polarity regions, and reduction positive pole connects with p-GaN surfaces
Contacting surface is accumulated, and is advantageous to improve the current density of laser.And in SiO2Layer of metal material, design lead electricity are deposited on insulating barrier
Pole structure, signal cross-talk and loss can be reduced, is easy to lead packages.
The present invention is set according to the luminescent spectrum of SQW diode component to the parameter of distributed bragg reflector mirror
Meter, modeling and simulating, with reference to focused ion beam (FIB) technology, distributed bragg reflector mirror knot is processed directly in InGaN waveguides
Structure, formed in top layer nitride device layers and be based on distributed bragg reflector mirror waveguide microcavity, integrate InGaN/GaN SQWs two
Pole pipe, realize electric pump silicon substrate GaN laser.
Silicon substrate GaN laser proposed by the present invention based on distributed bragg reflector mirror waveguide microcavity, available for can
See optic communication, display and sensory field.
The present invention compared with prior art, has advantages below：
1) AlN/AlGaN stress regulation and controls buffer layer technique and AlGaN integuments are used, can direct growth on a silicon substrate
The GaN base waveguiding structure of depositing high-quality, this material structure not only can be by large scale, low-cost silicon wafers and its automatic
Change processing line the manufacturing cost of GaN base device is greatly lowered, the also system integration for laser and silicon-based electronic devices carries
For a kind of technical strategies.
2) by FIB deep etching technologies, high-precision micro-nano technology is carried out in GaN waveguides, overcomes electron beam exposure
Technology is difficult to the bottleneck of the deep etching of GaN waveguide devices, and avoids by the way of plated film, make laser be easier to
Other devices integrate.
3) structural parameters or matching method of distributed bragg reflector mirror device can be changed, regulate and control microcavity, realize ripple
Long adjustable silicon substrate GaN laser.
4) its technology of preparing is to be based on conventional semiconductors processing technology, and part procedure of processing can be added by the semiconductor of technical grade
Work technique substitutes, and therefore, has great advantage in chip research and development, processing, cost control and volume production yield rate.
5) LASER Light Source can be used as to substitute LED light source, is integrated with waveguide, photodetector, prepared and served as a contrast based on silicon
The visible light communication chip of bottom InGaN/GaN lasers, can the availability of frequency spectrum of significant increase visible light wave range and leading to for chip
Believe performance, new direction is provided to the following development for promoting high-speed communication chip in visible mating plate.
Brief description of the drawings
Fig. 1 is the front view of silicon substrate GaN laser in the embodiment of the present invention 1；
Fig. 2 is the left view of silicon substrate GaN laser in the embodiment of the present invention 1；
Fig. 3 is the top view of silicon substrate GaN laser in the embodiment of the present invention 1；
Fig. 4 is the process chart of silicon substrate GaN laser in the embodiment of the present invention 2；
In figure：1- layer-of-substrate silicons:；2- epitaxial buffer layers；3-n-GaN layers；4- distributed bragg reflector mirrors；5-
The lead electrode district of p- electrodes；6-SiO2Insulating barrier；7-p-GaN layers；8-AlGaN integuments；9-InGaN ducting layers；
10-MQW multiple quantum well layers；The lead electrode district of 11-n- electrodes；
Embodiment
With reference to embodiment and Figure of description, the present invention is further illustrated.
Embodiment 1
Fig. 1, Fig. 2 and Fig. 3 give the silicon substrate GaN based on distributed bragg reflector mirror waveguide microcavity of the present embodiment
The structural representation of laser.
The silicon substrate GaN laser based on distributed bragg reflector mirror waveguide microcavity in the present embodiment, with silicon substrate nitrogen
Compound chip is carrier, including layer-of-substrate silicon 1, be arranged in the layer-of-substrate silicon 1 epitaxial buffer layer 2, be arranged on it is described outer
Prolong the p-n junction quantum well devices on cushion 2, the SiO being arranged on the p-n junction quantum well devices2Insulating barrier 6, is arranged on
The SiO2The lead electrode district 5 of p- electrodes on insulating barrier 6 and the lead electrode district 11 of n- electrodes, and distributed Bragg are anti-
Penetrate mirror 4；The p-n junction quantum well devices include n-GaN layers 3, n- electrodes 11, AlGaN integuments 8, InGaN waveguides 9, InGaN/
GaN SQWs (MQWs) layer 10, p-GaN layer 7 and p- electrodes 5；The upper surface of n-GaN layers 3 is stepped that etching is formed
Face, the stepped table top include following table and upper table surface, and the n- electrodes 11 are arranged on following table, the AlGaN parcels
Layer 8, InGaN ducting layers 9, InGaN/GaN SQWs (MQWs) layer 10, InGaN waveguides 9, AlGaN integuments 8, the and of p-GaN layer 7
P- electrodes 5 are sequentially connected the top for being arranged on upper table surface from bottom to up；The distributed bragg reflector mirror 4 is directly described
The both ends of upper table surface are from the SiO2What the InGaN ducting layers 9 that insulating barrier 6 is etched to lower section separately down obtained, the distribution
Formula Bragg mirror 4 symmetrically matches distribution at the both ends of upper table surface, forms Resonant Microcavity Architecture.
Embodiment 2
The silicon substrate based on distributed bragg reflector mirror waveguide microcavity being prepared in the present embodiment in above-described embodiment 1
GaN lasers.Fig. 4 gives the silicon substrate GaN laser based on distributed bragg reflector mirror waveguide microcavity of embodiment 1
Preparation method, comprise the following steps：
Step (1) carries out attenuated polishing after silica-based nitride wafer back to layer-of-substrate silicon 1；
Step (2) is uniformly coated with one layer of photoresist in silica-based nitride upper wafer surface, using lithography alignment technology in light
N-GaN3 stepped areas are defined on photoresist layer, the n-GaN stepped areas include following table and upper table surface；
Step (3) uses reactive ion beam etching (RIBE) n-GaN stepped areas, obtains stepped table top；
Step (4) is uniformly coated with one layer of photoresist in silica-based nitride upper wafer surface, using lithography alignment technology, definition
The p- electrode window through ray region that goes out in the p-GaN layer 7, positioned at the n- electrode window through ray region of the following table of n-GaN layers 3；
Ni/Au is deposited in the p- electrode window through ray region and n- electrode window through ray region in step (5) respectively, forms ohm and connects
Touch, realize p- electrodes and n- electrodes, after removing residual photoresist, that is, obtain p-n junction quantum well devices；
Step (6) is in silica-based nitride upper wafer surface homoepitaxial SiO2Insulating barrier 6, isolation both positive and negative polarity region；
Step (7) is in SiO2The Top electrode region openings of insulating barrier 6, and 600nm lead electricity of the gold as p- electrodes is deposited
Pole 5, while plate at n- electrode window through ray the gold of same thickness, the lead electrode 11 as n- electrodes；The evaporation is using stripping
Separating process and temperature control are realized in 600 DEG C of CDA annealing technologies；
Step (8) uses focused-ion-beam lithography (FIB) technology, directly performs etching, is processed at InGaN waveguides both ends
The distributed bragg reflector mirror 4 of pairing, micro-cavity structure is formed, obtains the silicon based on distributed bragg reflector mirror waveguide microcavity
Substrate GaN laser.
Above-described embodiment is only the preferred embodiment of the present invention, it should be pointed out that：For the ordinary skill of the art
For personnel, under the premise without departing from the principles of the invention, some improvement and equivalent substitution can also be made, these are to the present invention
Claim be improved with the technical scheme after equivalent substitution, each fall within protection scope of the present invention.
Claims (4)
1. a kind of silicon substrate GaN laser based on distributed bragg reflector mirror waveguide microcavity, it is characterised in that with silicon substrate nitrogen
Compound chip is carrier, including layer-of-substrate silicon, be arranged in the layer-of-substrate silicon epitaxial buffer layer, be arranged on described outer delay
The p-n junction quantum well devices rushed on layer, the SiO being arranged on the p-n junction quantum well devices2Insulating barrier, it is arranged on the SiO2
The lead electrode district of p- electrodes on insulating barrier and the lead electrode district of n- electrodes, and distributed bragg reflector mirror；The p-n
Tying quantum well devices includes n-GaN layers, n- electrodes, AlGaN integuments, InGaN waveguides, InGaN/GaN quantum well layers, p-GaN
Layer and p- electrodes；The n-GaN layers upper surface be etching formed stepped table top, the stepped table top include following table and
Upper table surface, the n- electrodes are arranged on following table, the AlGaN integuments, InGaN ducting layers, InGaN/GaN SQWs
Layer, InGaN waveguides, AlGaN integuments, p-GaN layer and p- electrodes are sequentially connected the top for being arranged on upper table surface from bottom to up；Institute
It is from the SiO directly at the both ends of the upper table surface to state distributed bragg reflector mirror2Insulating barrier is etched to down separately down
What the InGaN ducting layers of side obtained, the distributed bragg reflector mirror symmetrically matches distribution at the both ends of upper table surface, is formed humorous
Shake micro-cavity structure.
A kind of 2. silicon substrate GaN laser based on distributed bragg reflector mirror waveguide microcavity prepared described in claim 1
Method, it is characterised in that this method comprises the following steps：
Step (1) carries out attenuated polishing after silica-based nitride wafer back to layer-of-substrate silicon；
Step (2) is uniformly coated with one layer of photoresist in silica-based nitride upper wafer surface, using lithography alignment technology in photoresist
N-GaN stepped areas are defined on layer, the n-GaN stepped areas include following table and upper table surface；
Step (3) uses reactive ion beam etching (RIBE) n-GaN stepped areas, obtains stepped table top；
Step (4) is uniformly coated with one layer of photoresist in silica-based nitride upper wafer surface, using lithography alignment technology, defines position
In the p- electrode window through ray region in p-GaN layer, positioned at the n- electrode window through ray region of n-GaN layer following tables；
Step (5) is deposited Ni/Au in the p- electrode window through ray region and n- electrode window through ray region and forms Ohmic contact respectively, realizes
P- electrodes and n- electrodes, after removing residual photoresist, that is, obtain p-n junction quantum well devices；
Step (6) is in silica-based nitride upper wafer surface homoepitaxial SiO2Insulating barrier, isolation both positive and negative polarity region；
Step (7) is in SiO2Insulating barrier Top electrode region openings, and lead electrodes of the Au as p- electrodes is deposited, while in n- electricity
The electrode material of same thickness is plated at the window of pole, the lead electrode as n- electrodes；
Step (8) uses focused-ion-beam lithography technology, is directly performed etching at InGaN waveguides both ends, is processed into point of pairing
Cloth Bragg mirror 4, micro-cavity structure is formed, obtains the silicon substrate GaN based on distributed bragg reflector mirror waveguide microcavity
Laser.
3. the side of the silicon substrate GaN laser according to claim 2 based on distributed bragg reflector mirror waveguide microcavity
Method, it is characterised in that in above-mentioned preparation process, the silica-based nitride chip of use includes p-GaN layer, AlGaN bags from top to bottom
Covering layer, InGaN ducting layers, InGaN/GaN quantum well layers, InGaN ducting layers, AlGaN integuments, n-GaN layers, cushion and silicon
Substrate layer.
4. the side of the silicon substrate GaN laser according to claim 2 based on distributed bragg reflector mirror waveguide microcavity
Method, it is characterised in that in the step (7), the evaporation is using the CDA annealing skills of stripping technology and temperature control at 600 DEG C
Art is realized.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710518114.9A CN107404067A (en) | 2017-06-29 | 2017-06-29 | Silicon substrate GaN laser based on distributed bragg reflector mirror waveguide microcavity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710518114.9A CN107404067A (en) | 2017-06-29 | 2017-06-29 | Silicon substrate GaN laser based on distributed bragg reflector mirror waveguide microcavity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107404067A true CN107404067A (en) | 2017-11-28 |
Family
ID=60405144
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710518114.9A Pending CN107404067A (en) | 2017-06-29 | 2017-06-29 | Silicon substrate GaN laser based on distributed bragg reflector mirror waveguide microcavity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107404067A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108233181A (en) * | 2017-12-28 | 2018-06-29 | 南京邮电大学 | Hanging GaN film laser of integrated resonance grating microcavity and preparation method thereof |
| CN108336642A (en) * | 2018-02-11 | 2018-07-27 | 中国科学院苏州纳米技术与纳米仿生研究所南昌研究院 | A kind of nitride-based semiconductor micro-cavity laser structure of electrical pumping lasing and preparation method thereof |
| CN109713091A (en) * | 2018-12-29 | 2019-05-03 | 中国科学院长春光学精密机械与物理研究所 | A method of improving the coupling efficiency of GaN base integrated waveguide using high-reflecting film |
| CN110716260A (en) * | 2019-09-12 | 2020-01-21 | 南京工程学院 | Communication chip of homogeneous integrated laser, reflector and detector and preparation method |
| CN110797259A (en) * | 2019-10-23 | 2020-02-14 | 中国电子科技集团公司第十三研究所 | Homoepitaxy gallium nitride substrate processing method and gallium nitride substrate |
| CN113659432A (en) * | 2021-08-10 | 2021-11-16 | 湖南大学 | Small-size surface-emitting near-infrared laser and preparation method thereof |
| CN114256738A (en) * | 2021-11-10 | 2022-03-29 | 南京邮电大学 | Electric pump nitride suspended waveguide micro-laser and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001308452A (en) * | 2000-04-25 | 2001-11-02 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device |
| CN1829014A (en) * | 2005-02-28 | 2006-09-06 | 北京大学 | Cavity structure based on one-dimensional photon crystal and its preparing method |
| CN104900775A (en) * | 2014-03-06 | 2015-09-09 | 比亚迪股份有限公司 | LED structure and formation method thereof |
| CN105552714A (en) * | 2016-01-15 | 2016-05-04 | 北京工业大学 | 852nm narrow linewidth edge emitting laser with DBR (Distributed Bragg Reflection) grating structure and preparation method thereof |
| CN106684213A (en) * | 2015-11-06 | 2017-05-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | Gan-based semiconductor device and manufacturing method thereof |
-
2017
- 2017-06-29 CN CN201710518114.9A patent/CN107404067A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001308452A (en) * | 2000-04-25 | 2001-11-02 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device |
| CN1829014A (en) * | 2005-02-28 | 2006-09-06 | 北京大学 | Cavity structure based on one-dimensional photon crystal and its preparing method |
| CN104900775A (en) * | 2014-03-06 | 2015-09-09 | 比亚迪股份有限公司 | LED structure and formation method thereof |
| CN106684213A (en) * | 2015-11-06 | 2017-05-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | Gan-based semiconductor device and manufacturing method thereof |
| CN105552714A (en) * | 2016-01-15 | 2016-05-04 | 北京工业大学 | 852nm narrow linewidth edge emitting laser with DBR (Distributed Bragg Reflection) grating structure and preparation method thereof |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108233181A (en) * | 2017-12-28 | 2018-06-29 | 南京邮电大学 | Hanging GaN film laser of integrated resonance grating microcavity and preparation method thereof |
| CN108336642A (en) * | 2018-02-11 | 2018-07-27 | 中国科学院苏州纳米技术与纳米仿生研究所南昌研究院 | A kind of nitride-based semiconductor micro-cavity laser structure of electrical pumping lasing and preparation method thereof |
| CN109713091A (en) * | 2018-12-29 | 2019-05-03 | 中国科学院长春光学精密机械与物理研究所 | A method of improving the coupling efficiency of GaN base integrated waveguide using high-reflecting film |
| CN110716260A (en) * | 2019-09-12 | 2020-01-21 | 南京工程学院 | Communication chip of homogeneous integrated laser, reflector and detector and preparation method |
| CN110716260B (en) * | 2019-09-12 | 2020-07-07 | 南京工程学院 | Communication chip of homogeneous integrated laser, reflector and detector and preparation method |
| CN110797259A (en) * | 2019-10-23 | 2020-02-14 | 中国电子科技集团公司第十三研究所 | Homoepitaxy gallium nitride substrate processing method and gallium nitride substrate |
| CN110797259B (en) * | 2019-10-23 | 2022-03-29 | 中国电子科技集团公司第十三研究所 | Homoepitaxy gallium nitride substrate processing method and gallium nitride substrate |
| CN113659432A (en) * | 2021-08-10 | 2021-11-16 | 湖南大学 | Small-size surface-emitting near-infrared laser and preparation method thereof |
| CN114256738A (en) * | 2021-11-10 | 2022-03-29 | 南京邮电大学 | Electric pump nitride suspended waveguide micro-laser and preparation method thereof |
| CN114256738B (en) * | 2021-11-10 | 2023-09-12 | 南京邮电大学 | Electric pump nitride suspended waveguide micro-laser and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107404067A (en) | Silicon substrate GaN laser based on distributed bragg reflector mirror waveguide microcavity | |
| US11258231B2 (en) | GaN-based VCSEL chip based on porous DBR and manufacturing method of the same | |
| US9082934B2 (en) | Semiconductor optoelectronic structure with increased light extraction efficiency | |
| US9172008B2 (en) | Semiconductor light emitting device | |
| US7956371B2 (en) | High efficiency light emitting diode (LED) | |
| TWI354381B (en) | Opto-electronic semiconductor component | |
| TWI452731B (en) | Opto-electronic semiconductor chip and method for its production | |
| JP2005150675A (en) | Semiconductor light-emitting diode and its manufacturing method | |
| JP2007538408A (en) | Method of manufacturing a group 3 nitride device and device manufactured using the method | |
| JP2005317959A (en) | Photonic crystal light-emitting device | |
| JP2004363532A (en) | Manufacturing method for vertically structured gallium nitride light emitting diode | |
| JP2000228537A (en) | InXAlYGaZn LIGHT EMITTING ELEMENT AND ITS MANUFACTURE | |
| Xi et al. | Enhanced light extraction in GaInN light-emitting diode with pyramid reflector | |
| TW200947816A (en) | Optoelectronic component and method for the manufacture of an optoelectronic component | |
| JP2007266571A (en) | Led chip, its manufacturing method, and light emitting device | |
| CN110518031B (en) | Homogeneous integrated light source, detector and active waveguide communication chip and preparation method | |
| KR102116152B1 (en) | Light emitting device grown on a silicon substrate | |
| JP5496623B2 (en) | Optical semiconductor device | |
| US20230104302A1 (en) | Methods for coupling of optical fibers to a power photodiode | |
| US20230108564A1 (en) | Power photodiode structures and devices | |
| JP2011510497A (en) | Photon ring laser and manufacturing method thereof | |
| CN108133992B (en) | Optical pumping resonance enhances upside-down mounting red-light LED device and preparation method thereof | |
| CN110716260B (en) | Communication chip of homogeneous integrated laser, reflector and detector and preparation method | |
| WO2021167724A2 (en) | Power photodiode, methods for coupling of optical fibers to a power photodiode, and power-over-fiber system | |
| CN106025793B (en) | A kind of semiconductor laser with secondary resonance chamber |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171128 |