CN106025793B - A kind of semiconductor laser with secondary resonance chamber - Google Patents
A kind of semiconductor laser with secondary resonance chamber Download PDFInfo
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- CN106025793B CN106025793B CN201610557020.8A CN201610557020A CN106025793B CN 106025793 B CN106025793 B CN 106025793B CN 201610557020 A CN201610557020 A CN 201610557020A CN 106025793 B CN106025793 B CN 106025793B
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- layer
- secondary resonance
- type conductive
- semiconductor laser
- resonance chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0657—Mode locking, i.e. generation of pulses at a frequency corresponding to a roundtrip in the cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The present invention discloses a kind of semiconductor laser with secondary resonance chamber, successively epitaxial buffer layer, the first type conductive layer, the first lower waveguide layer, active area, ducting layer and second type conductive layer on first from the bottom to top on substrate；One layer of second lower waveguide layer is arranged by epitaxial growth between buffer layer and the first type conductive layer, passes through ducting layer on one layer second of epitaxial growth setting on second type conductive layer.The present invention uses the direct epitaxial growth of matching materials A l (1-x) HfxN, there is metallic reflection effect by Al (1-x) HfxN, secondary resonance chamber is formed, effectively improves the mode locking and light efficiency of semiconductor laser, while improving the response time of laser.
Description
Technical field
The present invention relates to field of laser device technology, refer in particular to a kind of semiconductor laser with secondary resonance chamber.
Background technique
As shown in Figure 1, the structure for traditional formal dress semiconductor laser chip that the prior art discloses, in Sapphire Substrate 10
Successively epitaxial buffer layer 20(AlGaN from the bottom to top), the first type conductive layer 30(n-GaN), the first type limiting layer 40(n-
AlGaN), lower waveguide layer 50(GaN), active area 60, upper ducting layer 70(GaN), electronic barrier layer 80(p-AlGaN) and second type
Conductive layer 90.
As laser power becomes greatly, the traditional structure laser is under big exciting power, the junction temperature of active area
Apparent increase causes the excitation wavelength of high power laser that apparent red shift occurs.
To solve the above problems, generalling use highly thermally conductive chip material and technique in the prior art, reduce the work temperature of MQW
Degree, and then reduce red shift of wavelength.It has a disadvantage in that: this method complex process, and entire chip to package application end is needed all to adopt
It is at high cost and be not easy to realize with highly thermally conductive material.
Summary of the invention
The purpose of the present invention is to provide a kind of semiconductor lasers with secondary resonance chamber, effectively improve secondary resonance
Mode locking light efficiency, while improving the response time of laser.
To reach above-mentioned purpose, solution of the invention are as follows:
A kind of semiconductor laser with secondary resonance chamber, successively epitaxial buffer layer, the first type from the bottom to top on substrate
Conductive layer, the first lower waveguide layer, active area, ducting layer and second type conductive layer on first；Buffer layer and the first type conductive layer it
Between one layer of second lower waveguide layer be arranged by epitaxial growth, pass through epitaxial growth one layer of second upper ripple of setting on second type conductive layer
Conducting shell.
Further, the material of the second lower waveguide layer is Al (1-x) HfxN, wherein 0.3 > x > 0.1.
Further, the material of ducting layer is Al (1-x) HfxN on second, wherein 0.3 > x > 0.1.
Further, the material of buffer layer is Al (1-x) HfxN, wherein 0.3 > x > 0.1.
Further, the first type of extension limiting layer between the first lower waveguide layer and the first type conductive layer.
Further, extension electronic barrier layer between ducting layer and second type conductive layer on first.
Further, the material of the first lower waveguide layer is GaN.
Further, the material of ducting layer is GaN on first.
After adopting the above scheme, the secondary ducting layer of the present invention is set in epitaxial layer, uses two in potted ends than traditional
The structural advantage of secondary waveguide is: using this epitaxial structure since light can obtain secondary resonance without propagating out epitaxial material,
So that transmission of angle of the light in the communication process of secondary resonance will not occur irregularly to change, the lock of secondary resonance is effectively improved
Mould light efficiency；Stroke of the light in ducting layer can be effectively reduced, the response time of laser is improved.
Secondary ducting layer is served as using aluminium nitride hafnium material: effectively realizing and secondary ducting layer is set in the epitaxial layer；Nitrogen
Change aluminium hafnium and gallium nitride material is matching material, so that the crystal quality of entire epitaxial layer continues to keep preferable crystal matter
Amount；Aluminium nitride hafnium has the effect of metallic mirror, can reach 90% or more to the reflectivity of visible light, can be effectively real
Existing secondary resonance.
Aluminium nitride hafnium reflecting mirror (the second lower waveguide layer) is transitted to using aluminium nitride hafnium buffer layer: so that aluminium nitride hafnium reflects
The surface roughness of mirror is less than 1.5nm, so that secondary resonance obtains preferable mirror reflection effect below active area；Using Al
The 0.3 > x > 0.1 of (1-x) HfxN, so that the gallium nitride epitaxial material crystal quality grown on aluminium nitride hafnium is preferable, it is real
The mirror effect of the secondary ducting layer of aluminium nitride hafnium on existing source region will not be deteriorated, so that secondary resonance is on the active area
Face also obtains preferable mirror reflection effect.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the prior art；
Fig. 2 is structural schematic diagram of the invention.
Label declaration
10 buffer layer 20 of substrate
First type conductive layer, 30 first type limiting layer 40
50 active area 60 of lower waveguide layer
Upper 70 electronic barrier layer 80 of ducting layer
Second type conductive layer 90
1 buffer layer 2 of substrate
Second lower waveguide layer, 31 first lower waveguide layer 32
First type conductive layer, 4 first type limiting layer 5
Ducting layer 71 on active area 6 first
72 electronic barrier layer 8 of ducting layer on second
Second type conductive layer 9.
Specific embodiment
Below in conjunction with drawings and the specific embodiments, the present invention will be described in detail.
Please refer to described in Fig. 2, a kind of semiconductor laser with secondary resonance chamber that the present invention discloses, on substrate 1 by
Under supreme successively epitaxial buffer layer 2, the second lower waveguide layer 31, the first type conductive layer 4(n-GaN), the first type limiting layer 5(n-
AlGaN), the first lower waveguide layer 32(GaN), ducting layer 71(GaN on active area 6, first), electronic barrier layer 8(p-AlGaN),
Second type conductive layer 9(p-GaN) and second on ducting layer 72.
Waveguide under being further added by one group second except ducting layer 71 on the first lower waveguide layer 32 and first of about 6 active area
The metallic mirror of 72 2 waveguides of ducting layer on layer 31 and second.Metallic mirror is set among epitaxial layer, is constituted secondary
Resonant cavity, so that light can obtain secondary resonance without propagating out epitaxial material, so that light is in the communication process of secondary resonance
Transmission of angle will not occur irregularly to change, effectively improve the mode locking light efficiency of secondary resonance；Light can be effectively reduced in waveguide
Stroke in layer, improves the response time of laser.
The material of second lower waveguide layer 31 is Al (1-x) HfxN, wherein 0.3 > x > 0.1.The material of ducting layer 72 on second
Material is Al (1-x) HfxN, wherein 0.3 > x > 0.1.The material of buffer layer 2 is Al (1-x) HfxN, wherein 0.3 > x > 0.1.Gold
The constituent material for belonging to reflecting mirror uses aluminium nitride hafnium material, and the second lower waveguide layer 31 of the secondary ducting layer of aluminium nitride hafnium is set to
On buffer layer 2, and buffer layer 2 also uses aluminium nitride hafnium；Ducting layer 72 is set to P-GaN second on the second of secondary wavelength layer
On type conductive layer 9.
Aluminium nitride hafnium material serves as secondary ducting layer: effectively realizing and secondary ducting layer is arranged in the epitaxial layer；Aluminium nitride
Hafnium and gallium nitride material are matching materials, so that the crystal quality of entire epitaxial layer continues to keep preferable crystal quality；Nitrogen
Changing aluminium hafnium has the effect of metallic mirror, can reach 90% or more to the reflectivity of visible light, can effectively realize secondary
Resonance.
Aluminium nitride hafnium buffer layer transits to aluminium nitride hafnium reflecting mirror (the second lower waveguide layer): so that aluminium nitride hafnium reflecting mirror
Surface roughness is less than 1.5nm, so that secondary resonance obtains preferable mirror reflection effect below active area；Using Al(1-
X) the 0.3 > x > 0.1 of HfxN, so that the gallium nitride epitaxial material crystal quality grown on aluminium nitride hafnium is preferable, realization has
The mirror effect of the secondary ducting layer of aluminium nitride hafnium on source region will not be deteriorated, so that secondary resonance face on the active area
Obtain preferable mirror reflection effect.
The above description is only a preferred embodiment of the present invention, and not to the limitation of this case design, all designs according to this case are closed
The equivalent variations that key is done each falls within the protection scope of this case.
Claims (5)
1. a kind of semiconductor laser with secondary resonance chamber, successively epitaxial buffer layer, the first type are led from the bottom to top on substrate
Electric layer, the first lower waveguide layer, active area, ducting layer and second type conductive layer on first；It is characterized by: buffer layer and the first type
The second lower waveguide layer of extension between conductive layer, ducting layer in extension second on second type conductive layer；
The material of second lower waveguide layer is Al (1-x) HfxN, wherein 0.3 > x > 0.1；
The material of ducting layer is Al (1-x) HfxN on described second, wherein 0.3 > x > 0.1；
The material of the buffer layer is Al (1-x) HfxN, wherein 0.3 > x > 0.1.
2. a kind of semiconductor laser with secondary resonance chamber as described in claim 1, it is characterised in that: the first lower waveguide
Extension the first type limiting layer between layer and the first type conductive layer.
3. a kind of semiconductor laser with secondary resonance chamber as described in claim 1, it is characterised in that: waveguide on first
Extension electronic barrier layer between layer and second type conductive layer.
4. a kind of semiconductor laser with secondary resonance chamber as described in claim 1, it is characterised in that: the first lower waveguide
The material of layer is GaN.
5. a kind of semiconductor laser with secondary resonance chamber as described in claim 1, it is characterised in that: waveguide on first
The material of layer is GaN.
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| CN106025793B true CN106025793B (en) | 2019-06-25 |
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| CN112397997B (en) * | 2020-11-16 | 2022-06-21 | 扬州乾照光电有限公司 | Semiconductor laser and manufacturing method thereof |
| CN114815048B (en) * | 2022-03-09 | 2023-11-14 | 上海交通大学 | Silicon-based aluminum nitride mixed waveguide and implementation method thereof |
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| US6829286B1 (en) * | 2000-05-26 | 2004-12-07 | Opticomp Corporation | Resonant cavity enhanced VCSEL/waveguide grating coupler |
| CN101471536A (en) * | 2007-12-26 | 2009-07-01 | 夏普株式会社 | Nitride semiconductor laser chip and method of fabricating same |
| CN101841123A (en) * | 2009-03-18 | 2010-09-22 | 中国科学院半导体研究所 | Semiconductor laser structure with reverse V-shaped coupling optical waveguide and small divergence angle |
| CN104466675A (en) * | 2014-12-15 | 2015-03-25 | 中国电子科技集团公司第十三研究所 | Narrow-divergence-angle ridge waveguide semiconductor laser |
| CN105281201A (en) * | 2014-07-21 | 2016-01-27 | 长春理工大学 | Epitaxial structure of GaSb group infrared laser having electron barrier layer |
| CN105633797A (en) * | 2016-03-22 | 2016-06-01 | 中山德华芯片技术有限公司 | High-power quantum well epitaxial wafer structure of semiconductor laser |
-
2016
- 2016-07-15 CN CN201610557020.8A patent/CN106025793B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6829286B1 (en) * | 2000-05-26 | 2004-12-07 | Opticomp Corporation | Resonant cavity enhanced VCSEL/waveguide grating coupler |
| CN101471536A (en) * | 2007-12-26 | 2009-07-01 | 夏普株式会社 | Nitride semiconductor laser chip and method of fabricating same |
| CN101841123A (en) * | 2009-03-18 | 2010-09-22 | 中国科学院半导体研究所 | Semiconductor laser structure with reverse V-shaped coupling optical waveguide and small divergence angle |
| CN105281201A (en) * | 2014-07-21 | 2016-01-27 | 长春理工大学 | Epitaxial structure of GaSb group infrared laser having electron barrier layer |
| CN104466675A (en) * | 2014-12-15 | 2015-03-25 | 中国电子科技集团公司第十三研究所 | Narrow-divergence-angle ridge waveguide semiconductor laser |
| CN105633797A (en) * | 2016-03-22 | 2016-06-01 | 中山德华芯片技术有限公司 | High-power quantum well epitaxial wafer structure of semiconductor laser |
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