CN114815048B - Silicon-based aluminum nitride mixed waveguide and implementation method thereof - Google Patents
Silicon-based aluminum nitride mixed waveguide and implementation method thereof Download PDFInfo
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- CN114815048B CN114815048B CN202210229813.2A CN202210229813A CN114815048B CN 114815048 B CN114815048 B CN 114815048B CN 202210229813 A CN202210229813 A CN 202210229813A CN 114815048 B CN114815048 B CN 114815048B
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 50
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 31
- 239000010703 silicon Substances 0.000 title claims abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims abstract description 17
- 230000003287 optical effect Effects 0.000 claims abstract description 17
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 11
- 238000005516 engineering process Methods 0.000 claims abstract description 8
- 230000001902 propagating effect Effects 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
- 238000000231 atomic layer deposition Methods 0.000 claims description 5
- 238000005253 cladding Methods 0.000 claims description 4
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 229910017083 AlN Inorganic materials 0.000 claims description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 abstract description 2
- 230000000644 propagated effect Effects 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12085—Integrated
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12176—Etching
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Abstract
A silicon-based aluminum nitride hybrid waveguide and a realization method thereof comprise: the first silicon layer, the aluminum nitride layer used for propagating the TM mode and the second silicon layer are sequentially arranged from top to bottom, namely the silicon-aluminum nitride-silicon structure used for propagating the TE mode and/or the TM mode. The invention realizes a silicon and aluminum nitride heterogeneous integrated hybrid slot waveguide structure on an SOI substrate by deposition and etching technology, and utilizes the excellent characteristics of aluminum nitride materials to realize the silicon-aluminum nitride-silicon heterogeneous integrated hybrid slot waveguide structure with optical mode field locally propagated in aluminum nitride and a preparation method.
Description
Technical Field
The invention relates to a technology in the field of integrated photoelectrons, in particular to a silicon-based aluminum nitride hybrid waveguide and an implementation method thereof.
Background
With the rapid development of information industry technology, optoelectronic integration technology is playing a great role. In an integrated optical circuit, in order to reduce the size of a chip and improve the performance of devices on the chip, an integrated optical waveguide with strong mode field limitation and low transmission loss and meeting the design purpose needs to be designed, and the integrated optical waveguide is a medium device for guiding an optical field to generate total reflection through a refractive index difference of a material so as to propagate in the optical waveguide. Silicon waveguides based on silicon-on-insulator (SOI) platforms have the advantage of strong mode field confinement and are compatible with complementary metal oxide semiconductor CMOS processes, which is an ideal choice for future large scale integrated optical circuits.
Disclosure of Invention
The invention provides a silicon-based aluminum nitride hybrid waveguide and a realization method thereof, which aim at the defects existing in the prior art, realize a silicon-aluminum nitride heterogeneous integrated hybrid slot waveguide structure on an SOI substrate by a deposition and etching technology, and realize the silicon-aluminum nitride-silicon heterogeneous integrated hybrid slot waveguide structure which propagates in aluminum nitride locally by utilizing the excellent characteristics of aluminum nitride materials and a preparation method thereof.
The invention is realized by the following technical scheme:
the invention relates to a hybrid slot waveguide based on a silicon-aluminum nitride-silicon heterogeneous integrated platform, which comprises the following components: the first silicon layer, the aluminum nitride layer used for propagating the TM mode and the second silicon layer are sequentially arranged from top to bottom, namely the silicon-aluminum nitride-silicon structure used for propagating the TE mode and/or the TM mode.
The refractive index distribution of the hybrid slot waveguide is silicon material refractive index n 1 Refractive index n of aluminium nitride material approximately equal to 3.42 2 ≈2.12。
The thickness of the first and second silicon layers is 100nm.
The propagation TM mode refers to: the change in the thickness of the aluminum nitride layer results in a change in the ratio of the optical mode field localized in the aluminum nitride layer, namely: the proportion of the optical mode field local area in the aluminum nitride layer is positively related to the thickness of the aluminum nitride; preferably, the ratio of the optical mode field to the aluminum nitride layer is 0.51 when the aluminum nitride layer is 100nm.
The invention relates to a realization method of the hybrid slot waveguide, which is characterized in that an aluminum nitride layer and a silicon layer are deposited on an SOI wafer by a CMOS compatible process, and the specific steps comprise:
step 1, depositing an aluminum nitride structure with the thickness of 100nm on an SOI wafer by utilizing an Atomic Layer Deposition (ALD);
step 2, depositing an amorphous silicon layer with the thickness of 100nm by a Plasma Enhanced Chemical Vapor Deposition (PECVD) method;
step 3, defining a waveguide structure on the photoresist by using an EBL electron beam exposure lithography technology;
and 4, performing full etching on the substrate for 100nm by plasma etching (ICP-RIE) to form the amorphous silicon waveguide structure with the thickness of 100nm.
Step 5, depositing SiO 1 μm thick by plasma enhanced chemical vapor deposition 2 Cladding, finally preparing silicon-aluminum nitride-siliconA hybrid slot waveguide is constructed.
Technical effects
According to the invention, aluminum nitride materials are introduced on the basis of the traditional silicon waveguide to form a waveguide device with a three-layer structure of Si-AlN-Si with the thickness of only 100nm, the excellent characteristics of the aluminum nitride materials can overcome the partial limitation of traditional silicon, and the waveguide device is compatible with a microelectronic CMOS (complementary metal oxide semiconductor) process, two heterogeneous integrated waveguides can effectively transmit light, can introduce the excellent photoelectric characteristics and the material characteristics of aluminum nitride, can change the specific thickness of the aluminum nitride to achieve different optical local area ratios, and can be applied to different scenes by changing the thickness of an aluminum nitride layer.
Drawings
FIG. 1 is a flow chart of the present invention;
FIG. 2 is a partial cross-sectional representation (Si-AlN-Si) of a silicon-based aluminum nitride hybrid waveguide prepared by the example;
FIG. 3 is a simulated spectrum of an embodiment;
FIG. 4 is a graph showing the percentage of light localized in an aluminum nitride layer as a function of thickness in an example.
Detailed Description
As shown in fig. 1, a silicon-based aluminum nitride hybrid waveguide and an implementation method thereof according to this embodiment include the following steps:
step 1) a layer of aluminum nitride is deposited on the SOI wafer by Atomic Layer Deposition (ALD) to a thickness of 100nm.
Step 2) 100nm thick amorphous silicon is deposited on the prepared aluminum nitride layer by Plasma Enhanced Chemical Vapor Deposition (PECVD).
Step 3) defining the waveguide on the photoresist by EBL electron beam exposure lithography, and then fully etching 100nm by plasma etching (ICP-RIE) to form a 100nm thick amorphous silicon waveguide structure, the silicon-aluminum nitride-silicon structure of the hybrid slot waveguide being realized.
After the etching step is completed, a 1 μm thick SiO is deposited using a plasma enhanced chemical vapor deposition method 2 Cladding, and finally obtaining the silicon-aluminum nitride-silicon structure hybrid slot waveguide.
As shown in fig. 2, the silicon-aluminum nitride-silicon structure hybrid slot waveguide prepared by the method in this embodiment includes: a first silicon layer, an aluminum nitride layer, and a second silicon layer, wherein: the thickness of the upper and lower silicon layers is 100nm, wherein the thickness of the aluminum nitride can be adjusted according to actual use conditions, and is preferably 100nm.
The mode field of the hybrid slot waveguide was demonstrated to be effectively localized within the waveguide by modeling the hybrid slot waveguide by a percentage of aluminum nitride localized light, wherein the TM fundamental mode was localized in the aluminum nitride layer of the hybrid slot at a 51% ratio. By constantly changing the analog thickness of aluminum nitride, the optical local ratio calculation results are also changed, specifically, the change is increased with the increase of the thickness of aluminum nitride, as shown in fig. 4.
Compared with the prior art, the invention applies the aluminum nitride material to the optical waveguide device, can effectively utilize the photoelectric property and the material property of the aluminum nitride material through the propagation of the light local area in the aluminum nitride, and can adjust the light local area ratio by changing the thickness of the aluminum nitride layer, thereby being flexibly applied to different scenes.
The foregoing embodiments may be partially modified in numerous ways by those skilled in the art without departing from the principles and spirit of the invention, the scope of which is defined in the claims and not by the foregoing embodiments, and all such implementations are within the scope of the invention.
Claims (4)
1. A hybrid waveguide based on a silicon-aluminum nitride-silicon heterogeneous integrated platform, characterized in that it is a silicon-aluminum nitride-silicon structure for propagating TE mode and/or propagating TM mode, comprising in particular: siO deposited by plasma enhanced chemical vapor deposition method and arranged from top to bottom in sequence 2 A cladding layer, a first silicon layer, an aluminum nitride layer for propagating a TM mode, and a second silicon layer;
the thickness of the first silicon layer and the second silicon layer is 100nm;
in the hybrid waveguide, the ratio value of the optical mode field area in the aluminum nitride layer is changed by changing the thickness of the aluminum nitride layer, namely: the TM fundamental mode is localized in the aluminum nitride layer of the hybrid waveguide in proportion to the optical mode field localized in the aluminum nitride layer, and the optical local ratio calculation results are also increased with the increase of the aluminum nitride thickness by constantly changing the analog thickness of aluminum nitride.
2. The hybrid waveguide based on a silicon-aluminum nitride-silicon heterogeneous integrated platform according to claim 1, wherein the refractive index profile of the hybrid waveguide is the refractive index n of the silicon material 1 Refractive index n of aluminium nitride material approximately equal to 3.42 2 ≈2.12。
3. The hybrid waveguide based on a silicon-aluminum nitride-silicon heterogeneous integrated platform according to claim 1, wherein the proportion of optical mode field localized in the aluminum nitride layer is 0.51 at 100nm.
4. A method of implementing the hybrid waveguide of any of claims 1-3, characterized by an aluminum nitride layer and a silicon layer deposited in a CMOS compatible process on an SOI wafer, comprising the specific steps of:
step 1, depositing an aluminum nitride structure with the thickness of 100nm on an SOI wafer by utilizing an atomic layer deposition technology;
step 2, depositing an amorphous silicon layer with the thickness of 100nm by a plasma enhanced chemical vapor deposition method;
step 3, defining a waveguide structure on the photoresist by using an EBL electron beam exposure lithography technology;
step 4, etching 100nm through plasma to form an amorphous silicon waveguide structure with the thickness of 100nm;
step 5, depositing SiO 1 μm thick by plasma enhanced chemical vapor deposition 2 Cladding, and finally obtaining the silicon-aluminum nitride-silicon structure hybrid waveguide.
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|---|---|---|---|---|
| JPH06289348A (en) * | 1993-04-05 | 1994-10-18 | Alps Electric Co Ltd | Optical waveguide type optical element |
| CN104094399A (en) * | 2011-11-04 | 2014-10-08 | 斯兰纳私人集团有限公司 | Method of producing silicon-on-insulator article |
| CN104698537A (en) * | 2015-02-17 | 2015-06-10 | 南京邮电大学 | Aluminum nitride-based guided-mode resonant multichannel light filter and preparation method thereof |
| CN106025793A (en) * | 2016-07-15 | 2016-10-12 | 厦门乾照光电股份有限公司 | Semiconductor laser with second resonant cavity |
| CN107768235A (en) * | 2017-10-25 | 2018-03-06 | 中国工程物理研究院电子工程研究所 | A kind of preparation method of the epitaxy of gallium nitride structure based on molybdenum disulfide graphene compound buffer layer |
| CN112379480A (en) * | 2020-11-17 | 2021-02-19 | 济南晶正电子科技有限公司 | Preparation method of waveguide structure composite substrate, composite substrate and photoelectric crystal film |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011505596A (en) * | 2007-11-30 | 2011-02-24 | スリーエム イノベイティブ プロパティズ カンパニー | Method for fabricating an optical waveguide |
| US10665609B2 (en) * | 2017-02-22 | 2020-05-26 | International Business Machines Corporation | Electro-optical and optoelectronic devices |
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- 2022-03-09 CN CN202210229813.2A patent/CN114815048B/en active Active
Patent Citations (6)
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|---|---|---|---|---|
| JPH06289348A (en) * | 1993-04-05 | 1994-10-18 | Alps Electric Co Ltd | Optical waveguide type optical element |
| CN104094399A (en) * | 2011-11-04 | 2014-10-08 | 斯兰纳私人集团有限公司 | Method of producing silicon-on-insulator article |
| CN104698537A (en) * | 2015-02-17 | 2015-06-10 | 南京邮电大学 | Aluminum nitride-based guided-mode resonant multichannel light filter and preparation method thereof |
| CN106025793A (en) * | 2016-07-15 | 2016-10-12 | 厦门乾照光电股份有限公司 | Semiconductor laser with second resonant cavity |
| CN107768235A (en) * | 2017-10-25 | 2018-03-06 | 中国工程物理研究院电子工程研究所 | A kind of preparation method of the epitaxy of gallium nitride structure based on molybdenum disulfide graphene compound buffer layer |
| CN112379480A (en) * | 2020-11-17 | 2021-02-19 | 济南晶正电子科技有限公司 | Preparation method of waveguide structure composite substrate, composite substrate and photoelectric crystal film |
Non-Patent Citations (1)
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