CN104466675A - Narrow-divergence-angle ridge waveguide semiconductor laser - Google Patents
Narrow-divergence-angle ridge waveguide semiconductor laser Download PDFInfo
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Abstract
The invention discloses a narrow-divergence-angle ridge waveguide semiconductor laser. The narrow-divergence-angle ridge waveguide semiconductor laser comprises a substrate layer, a buffering layer, an N type limiting layer, a lower limiting layer, a lower waveguide layer, a multi-quantum-well area, an upper waveguide layer, an upper limiting layer, a corrosion blocking layer, a P type limiting layer and an electrode contact layer, wherein an expansion waveguide layer is further arranged between the buffering layer and the N type limiting layer, is made of N type InGaAsP materials and is 0.2-0.5 micrometer thick, the lower waveguide layer is 0.05-0.15 micrometer thick, the upper waveguide layer is 0.05-0.15 micrometer thick, and the distance between the expansion waveguide layer and the multi-quantum-well area is 1-2 micrometers. The P type limiting layer and the electrode contact layer are arranged in the longitudinal middle of the corrosion blocking layer to form a ridge waveguide. A small spherical lens is used for packaging. The vertical divergence angle is reduced, coupling efficiency is improved, temperature performance meets the requirements, the process is simplified, the chip yield is improved, and the cost is low.
Description
Technical field
The present invention relates to semiconductor laser field.
Background technology
Along with the development of fiber optic network, the requirement for optical transceiver cell is also more and more higher, due to the keen competition in market, has better performance and the element having a more low cost just often has superiority simultaneously.The EPON(ethernet passive optical network of extensive use) usually require higher coupling fiber power, this just proposes high requirement to TO device.If adopt high efficiency chip and aspheric lens packages, due to non-spherical lens cost, comparatively globe lens cost is high, therefore causes using in the device price of aspheric lens packages not preponderating.To adopt globe lens to reduce packaging cost, just need to develop narrow angle of divergence chip of laser to obtain the higher fiber optical power that goes out.The TO device of existing microsphere lens encapsulation uses the structure of InGaAsP (InGaAsP) material buried heterostructure, and it adopts small divergence angle work, and with low cost, but the restriction of its chip internal electronics is bad, and during hot operation, threshold value is too high, efficiency is on the low side.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of narrow angle of divergence ridge waveguide semiconductor laser, reduces vertical divergence angle, and improve coupling efficiency, temperature characterisitic can meet the demands, and technical process simplifies, and improves chip yield, with low cost.
For solving the problems of the technologies described above, the technical solution used in the present invention is:
A kind of narrow angle of divergence ridge waveguide semiconductor generating laser, comprise substrate layer, the resilient coating be provided with successively from the bottom to top on substrate layer, N-type limiting layer, lower limit layer, lower waveguide layer, multiquantum well region, on ducting layer, upper limiting layer, corrosion barrier layer, P type limiting layer and contact electrode layer; Expansion ducting layer is also provided with between resilient coating and N-type limiting layer, described expansion ducting layer is N-type InGaAsP material, the thickness of expansion ducting layer is 0.2 μm-0.4 μm, the thickness of described lower waveguide layer is 0.05 μm-0.15 μm, the thickness of upper ducting layer is 0.05 μm-0.15 μm, and expansion ducting layer is 1.0 μm-2.0 μm to the distance of multiquantum well region; Described P type limiting layer and contact electrode layer are arranged on the longitudinal middle part of corrosion barrier layer, form ridge waveguide; Employing diameter is the microsphere lens encapsulation of 1.5mm-2mm.
Further technical scheme, the thickness of described expansion ducting layer is 0.3 μm, and the thickness of lower waveguide layer is 0.1 μm, and the thickness of upper ducting layer is 0.1 μm, and expansion ducting layer is 1.4 μm to the distance of multiquantum well region.
Further technical scheme, adopts diameter to be the encapsulation of 1.5mm microsphere lens.
Further technical scheme, the refractive index of described microsphere lens encapsulation is 1.45-1.8, and effective numerical aperture is 0.1-0.2.
Further technical scheme, described lower waveguide layer, multiquantum well region and upper ducting layer adopt the AlGaInAs material of undoped.
Further technical scheme, described lower limit layer adopts the AlGaInAs material of N-type.
Further technical scheme, the width of described ridge waveguide is 2.5 μm, and the degree of depth is 1.8 μm.
The beneficial effect adopting technique scheme to produce is: reduce vertical divergence angle, and improve coupling efficiency, temperature characterisitic can meet the demands, and technical process simplifies, and improves chip yield, with low cost; Adopt monolateral prolongation structure to design, reduce vertical divergence angle, improve coupling efficiency; AlGaInAs(Al-Ga-In-As) replace InGaAsP material system, improve internal electron restriction, improve characteristic during hot operation, without the need to increasing refrigerator, being more suitable for non-brake method work; Ridge waveguide chip structure replaces buried heterostructure structure, and technical process simplifies, and reduces chip manufacturing cost and improves chip yield; Employing microsphere lens encapsulates, with low cost.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
Fig. 2 is the relation of input aperture and aberration;
Fig. 3 is near field distribution simulation result;
Fig. 4 is far field simulation result;
Fig. 5 is chip microphoto;
Tu6Shi chip functions district cross-section photograph;
Fig. 7 is chip power and efficiency curve;
Fig. 8 is the angle of divergence test curve of chip;
In the accompanying drawings: 1, substrate layer, 2, resilient coating, 3, expansion ducting layer, 4, N-type limiting layer, 5, lower limit layer, 6, lower waveguide layer, 7, multiquantum well region, 8, upper ducting layer, 9, upper limiting layer, 10, corrosion barrier layer, 11, P type limiting layer, 12, contact electrode layer.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
As shown in Figure 1, narrow angle of divergence ridge waveguide semiconductor laser, comprises from bottom to top successively:
Substrate layer 1, for carrying out the growth of semiconductor laser layers of material thereon, in the present invention, substrate layer 1 is the InP in N-type (100) face, can be conducive to the injection of electronics, reduces the series resistance of backing material.Resilient coating 2, is produced on substrate layer 1, is N-type InP material, and object forms high-quality epitaxial surface, reduces the stress of substrate layer 1 and other each layers, and the defect eliminating substrate layer 1, to the propagation of other each layers, is beneficial to the growth of the material of other each layers of device.Expansion ducting layer 3, be N-type InGaAsP material, this layer has higher refractive index, its objective is and makes light field can expand a part in this region from main waveguide, play the effect of expansion near field hot spot, thus reduce the far-field divergence angle of laser.N-type limiting layer 4, is the InP material of N-type, effectively can hinders diffusion and the drift of electronics, and limit the expansion of light field transverse mode to this layer, thus reduces the loss of light, namely reduces potential barrier, reduces voltage loss.Lower limit layer 5 is the AlGaInAs material of N-type.Effectively can hinder diffusion and the drift of electronics, and limit the expansion of light field transverse mode to this layer, thus reduce the loss of light, namely reduce potential barrier, reduce voltage loss.Lower waveguide layer 6 is the AlGaInAs material of undoped.Object strengthens the restriction to light field.Multiquantum well region 7, is made up of 5 quantum well and 6 bases, is the AlGaInAs material of undoped.As the active area of laser, provide enough gains of light, and determine the excitation wavelength of device and the useful life of device.Upper ducting layer 8 is the AlGaInAs material of undoped.Object strengthens the restriction to light field.Upper limiting layer 9 is the AlInAs material of P type.Effect is with lower limit layer 5.Corrosion barrier layer 10 is the InGaAsP corrosion barrier layer of P type.The effect that corrosion stops is played in technique etching.P type limiting layer 11 is the InP material of P type.Act on identical with N-type limiting layer 4.Contact electrode layer 12 is heavily doped P type InGaAs material.Its objective is and realize good ohmic contact, reduce series resistance, improve the conversion efficiency of device.P type limiting layer 11 and contact electrode layer 12 are arranged on the longitudinal middle part of corrosion barrier layer 10, form ridge waveguide.The thickness of each layer is as shown in table 1.
Table 1
| Epitaxial loayer sequence number | Material component | Thickness (μm) |
| Contact electrode layer 12 | InGaAs | 0.2 |
| P type limiting layer 11 | InP | 1.6 |
| Corrosion barrier layer 10 | InGaAsP | 0.02 |
| Upper limiting layer 9 | AlGaInAs | 0.1 |
| Upper ducting layer 8 | AlGaInAs | 0.1 |
| Multiquantum well region 7 | AlGaInAs | |
| Lower waveguide layer 6 | AlGaInAs | 0.1 |
| Lower limit layer 5 | AlGaInAs | 0.1 |
| N-type limiting layer 4 | InP | 1.2 |
| Expansion ducting layer 3 | InGaAsP | 0.3 |
| Resilient coating 2 | InP | 0.5 |
| Substrate layer 1 | InP substrate |
Epitaxial slice structure adopts expansion waveguiding structure, chip structure adopts common ridge waveguide structure, the wide design width of ridge 2.5 μm, because have etch stop layer in material structure, namely design ridge controls the thickness sum 1.8 μm on the 10th layer of table 1 by selective etching deeply.Long 250 μm of chip design chamber, both ends of the surface reflectivity is 15% and 85%.For this structure simulation result as shown in Figures 2 and 3.
The pipe cap lens that the optical-fibre communications LD-TO such as usual GPON, EPON use mainly contains three kinds, diameter 1.5mm sphere lens, diameter 2.0mm sphere lens and non-spherical lens.Wherein diameter 1.5mm sphere lens is commonly called as microsphere lens, and price is minimum, and diameter 2.0mm sphere lens is commonly called as large globe lens, because lens material reason, slightly higher than microsphere lens price, but not globe lens is because processing cost reason, in three kinds of lens, price is the highest.Therefore the present invention adopts microsphere lens to encapsulate, and reduces the cost of chip.Table 2 simply lists the optical parametric of three kinds of lens.
Table 2 three kinds of LD-TO pipe cap lens parameters
| Diameter (mm) | Refractive index | Effective aperture | |
| Microsphere lens | 1.5 | 1.50 | 0.125* |
| Large globe lens | 2.0 | 1.78 | 0.16* |
| Non-spherical lens | 2.0 | 1.67 | 0.40 |
Sphere lens has very large aberration at shaft angle degree far away, because sphere lens is also a kind of special spherical mirror, and because the aberration caused of sphere is also known as spherical aberration.Ray tracing Fig. 2 is used to give three kinds of lens, the relation of incident bore and aberration in high power TO applies.The effective aperture of lens can be estimated by the mode field diameter (common communication fibre-optic mode field diameter 8.2 μm) of aberration curve and optical fiber, the numerical value of estimation is in table 2, analyzed by aberration and effective aperture, when coupling efficiency will reach 25% level, the angle of divergence half-breadth fast and slow axis mean value of General Requirements LD chip is within 20 degree.
As shown in Figure 3, because the symmetry of device architecture, adopt Symmetry Edge condition, the distribution that simulation is half of.In figure, left side is the Two dimensional Distribution of intensity contour, display light field intensity; Figure right side is the distribution of light intensity distribution of symmetry axis place longitudinal profile.Can find out, the top of figure, comparatively strong in active area optical field distribution, in the expansion waveguide of below of having only had sub-fraction to couple light to, this effectively have compressed fast axle the angle of divergence and to chip parameter as the parameters such as threshold efficiency do not have a significant effect.It can also be seen that from Fig. 3, the light field in expansion waveguide, more main waveguide has larger transverse width, and this is conducive to compressing slow axis divergence.The fast and slow axis angle of divergence of Fig. 4 display simulation, half intensity overall with is 23 degree and 14 degree respectively.
Material epitaxy adopts the growth apparatus of parallel airflow reaction chamber structure, and epitaxial wafer is placed on graphite base, and graphite base has the kinetic characteristic of revolution and rotation, to obtain good uniformity.Epitaxial growth adopts 3 inches of N+ substrates, and primary growth source is trimethyl gallium, trimethyl indium, trimethyl aluminium, phosphine and arsine, and P type doped source is diethyl zinc, and N-type doped source is the silane of dilution, and growth temperature is 650 DEG C, and growth pressure is 100mBar.
In chip technology, ridge waveguide bar shaped adopts projection lithography technique accurately to control strip width, and the wide precision of bar is ± 0.1 μm, and photoetching direction and crystal orientation deviation of the alignment are less than 0.06 degree.Adopt dry etching, then wet etching makes ridge waveguide.These preparation technologies are identical with the common ridge waveguide FP laser of our volume production.As shown in Figure 5, photo is detected as shown in Figure 6 in Electronic Speculum cross section to chip outward appearance, and electromicroscopic photograph has marked the position of main waveguide (active area) and expansion waveguide.
As shown in Figure 7, have the chip threshold value 10mA of expansion waveguide, efficiency 0.60mW/mA, the above 20mA power of threshold value is 11.95mW.Here illustratively, because use surface detector measured power here, because calibration problem, the chip that corresponding dispersion angle is little, efficiency and power all can be bigger than normal.The nothing expansion waveguiding structure of identical active area structure, because the angle of divergence is larger, the test value of efficiency and power is respectively 0.50mW/mA and 10.0mW, and has the narrow angle of divergence chip expanding waveguiding structure and has marked difference, and estimated service life integrating sphere measures both power can not have significant difference.Have expansion waveguide chip 85 DEG C of condition lower threshold value 20mA, efficiency 0.55mW/mA, visible hot properties is fine equally.
As shown in Figure 8, the angle of divergence test value of chip and simulation result are to deserved very good, and half intensity overall with is 23 degree and 13 degree respectively, and far-field characteristic, according to above to microsphere lens effective numerical aperture and Spherical Aberration Analysis, meets the EPON application that bead TO encapsulates.
In order at checking effect, randomly draw 8 chips, use 1.5mm diameter microsphere lens to be packaged into TO device, and assemble with BOSA form, measure pre-coupling coupling fiber light power, and contrast with without the common chip expanding waveguiding structure, concrete outcome is in table 3.
Table 3 chip TO encapsulation parameter and pre-coupling test comparison
| Numbering | TO device threshold (mA) | TO device efficiency (mW/mA) | The fine power (μ W) of pre-decoupling |
| 1 | 9.6 | 0.42 | 2350 |
| 2 | 9.8 | 0.42 | 2360 |
| 3 | 10.1 | 0.42 | 2040 |
| 4 | 10.2 | 0.42 | 2275 |
| 5 | 9.9 | 0.41 | 2412 |
| 6 | 9.8 | 0.40 | 2150 |
| 7 | 10.1 | 0.42 | 2106 |
| 8 | 10.0 | 0.42 | 2123 |
| On average | 9.94 | 0.416 | 2227 |
| Common chip is average | 9.1 | 0.317 | 1037 |
As can be seen from Table 3, use narrow angle of divergence chip package to become the TO device of 1.5mm microsphere lens, pre-coupling fiber power has exceeded 2000 μ W, through being welded and fixed, after burn-in test still more than 1800 μ W, apply the restriction of 1200 μ W standards far above EPON, meet EPON application requirement.
The ridge waveguide 1310nm FP chip with expansion waveguiding structure of the present invention, has the feature such as the narrow angle of divergence, high efficiency good temp characteristic, and the TO device using the 1.5mm microsphere lens of low cost to be packaged into meets EPON application requirement.
Claims (7)
1. a narrow angle of divergence ridge waveguide semiconductor laser, comprises substrate layer (1), the resilient coating (2) that substrate layer (1) is provided with from the bottom to top successively, N-type limiting layer (4), lower limit layer (5), lower waveguide layer (6), multiquantum well region (7), upper ducting layer (8), upper limiting layer (9), corrosion barrier layer (10), P type limiting layer (11) and contact electrode layer (12); It is characterized in that between resilient coating (2) and N-type limiting layer (4), be also provided with expansion ducting layer (3), described expansion ducting layer (3) is N-type InGaAsP material, the thickness of expansion ducting layer (3) is 0.2 μm-0.5 μm, the thickness of described lower waveguide layer (6) is 0.05 μm-0.15 μm, the thickness of upper ducting layer (8) is 0.05 μm-0.15 μm, and expansion ducting layer (3) is 1 μm-2 μm to the distance of multiquantum well region (7); Described P type limiting layer (11) and contact electrode layer (12) are arranged on the longitudinal middle part of corrosion barrier layer (10), form ridge waveguide; Employing diameter is the microsphere lens encapsulation of 1.5mm-2.0mm.
2. narrow angle of divergence ridge waveguide semiconductor laser according to claim 1, the thickness that it is characterized in that described expansion ducting layer (3) is 0.3 μm, the thickness of lower waveguide layer (6) is 0.1 μm, the thickness of upper ducting layer (8) is 0.1 μm, and expansion ducting layer (3) is 1.4 μm to the distance of multiquantum well region (7).
3. narrow angle of divergence ridge waveguide semiconductor laser according to claim 1, is characterized in that adopting diameter to be the encapsulation of 1.5mm microsphere lens.
4. narrow angle of divergence ridge waveguide semiconductor laser according to claim 3, it is characterized in that the refractive index that described microsphere lens encapsulates is 1.45-1.8, effective numerical aperture is 0.1-0.2.
5. narrow angle of divergence ridge waveguide semiconductor laser according to claim 1, is characterized in that described lower waveguide layer (6), multiquantum well region (7) and upper ducting layer (8) adopt the AlGaInAs material of undoped.
6. narrow angle of divergence ridge waveguide semiconductor laser according to claim 1, is characterized in that described lower limit layer (5) adopts the AlGaInAs material of N-type.
7. narrow angle of divergence ridge waveguide semiconductor laser according to claim 1, it is characterized in that the width of described ridge waveguide is 2.5 μm, the degree of depth is 1.8 μm.
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