CN108539578A - A kind of semiconductor laser - Google Patents
A kind of semiconductor laser Download PDFInfo
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- CN108539578A CN108539578A CN201810510712.6A CN201810510712A CN108539578A CN 108539578 A CN108539578 A CN 108539578A CN 201810510712 A CN201810510712 A CN 201810510712A CN 108539578 A CN108539578 A CN 108539578A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Abstract
The application is suitable for field of laser device technology, provides a kind of semiconductor laser, the semiconductor laser includes：Substrate, the buffer layer being equipped with from the bottom to top on substrate, N-type limiting layer, lower limit layer, lower waveguide layer, multiple quantum wells, upper ducting layer, upper limiting layer, corrosion barrier layer, p-type limiting layer and contact electrode layer, it is equipped at least two layers extension ducting layer between the buffer layer and the N-type limiting layer, coupling efficiency is improved while can reducing vertical divergence angle by the application.
Description
Technical field
The application belongs to field of laser device technology more particularly to a kind of semiconductor laser.
Background technology
With the rapid growth of the digital communication demand characterized by internet, global optical communication industry takes over the past few years
Rapid development was obtained, and the requirement for optical transceiver cell is also higher and higher.If using high efficiency laser chip and
Aspheric lens packages so will result in the rising of cost；It is higher in order to obtain if reducing packaging cost using globe lens
Go out fiber optical power just to need to develop narrow angle of divergence chip of laser.
Currently, using the chip of laser that the coaxial component that microsphere lens encapsulate uses for InGaAsP (InGaAsP) material
The structure for expecting buried heterostructure uses the narrow angle of divergence to work.However, its complex process, coupling efficiency are relatively low.
Invention content
In view of this, the embodiment of the present application provides a kind of semiconductor laser, while to reduce vertical divergence angle also
Improve coupling efficiency.
The embodiment of the present application provides a kind of semiconductor laser, including：
Substrate, the buffer layer being equipped with from the bottom to top on substrate, N-type limiting layer, lower limit layer, lower waveguide layer, Multiple-quantum
Trap, upper ducting layer, upper limiting layer, corrosion barrier layer, p-type limiting layer and contact electrode layer, the buffer layer and N-type limitation
At least two layers extension ducting layer is equipped between layer.
Further, upper extension ducting layer and lower expansion are equipped between the buffer layer and the N-type limiting layer from the bottom to top
Open up ducting layer.
Further, separation layer is equipped between the upper extension ducting layer and the lower extension ducting layer.
Further, the lower extension ducting layer is N-type InGaAlAs materials, and the separation layer is N-type InP materials, institute
It is N-type InGaAlAs materials to state extension ducting layer.
Further, the thickness of the lower extension ducting layer is 0.1 μm~0.2 μm, and the thickness of the separation layer is 0.4 μm
~0.8 μm, the thickness of the upper extension ducting layer is 0.1 μm~0.2 μm.
Further, the thickness of the lower extension ducting layer is 0.15 μm, and the thickness of the separation layer is 0.6 μm, described
The thickness of upper extension ducting layer is 0.12 μm.
Further, the longitudinal middle part in the corrosion barrier layer is arranged in the p-type limiting layer and the contact electrode layer
Ridge waveguide is constituted, the width of the ridge waveguide is 2.5um, depth 1.8um.
Further, the thickness of the lower waveguide layer is 0.05 μm~0.15 μm, and the thickness of the upper ducting layer is 0.05 μ
M~0.15 μm, the distance between the upper extension ducting layer and the multiple quantum wells are 1 μm~2 μm.
Further, the thickness of the lower waveguide layer is 0.1 μm, and the thickness of the upper ducting layer is 0.1 μm, the upper expansion
It is 1.4 μm to open up the distance between ducting layer and the multiple quantum wells.
Further, the lower waveguide layer, the multiple quantum wells and the upper ducting layer are all made of undoped
AlGaInAs materials, the lower limit layer use N-type AlGaInAs materials.
The embodiment of the present application is designed using unilateral twin-guide prolongation structure, by the light field that generates multiple quantum wells from lower wave
In region between conducting shell and upper ducting layer, the region between an extension part to upper extension ducting layer and lower extension ducting layer
In, play the role of extension near field hot spot and improves coupling efficiency to reduce the far field vertical divergence angle of laser.
The upper extension ducting layer and lower extension ducting layer use InGaAlAs materials, due to the height folding of InGaAlAs materials
Rate characteristic is penetrated, the consistency of the semiconductor laser chip angle of divergence is improved, improves chip yield；InGaAlAs material bodies
System, additionally it is possible to improve internal electron limitation, improve characteristic when hot operation, without increasing refrigerator, be more suitable for non-brake method
Work.
The design structure of ridge waveguide replace traditional buried heterostructure structure, technical process simplify, reduce chip manufacturing at
Sheet and raising chip yield.
Description of the drawings
It in order to more clearly explain the technical solutions in the embodiments of the present application, below will be to embodiment or description of the prior art
Needed in attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description is only some of the application
Embodiment for those of ordinary skill in the art without having to pay creative labor, can also be according to these
Attached drawing obtains other attached drawings.
Fig. 1 is a kind of structural schematic diagram of semiconductor laser provided by the embodiments of the present application；
In the accompanying drawings：1, substrate, 2, buffer layer, 3, lower extension ducting layer, 4, separation layer, 5, upper extension ducting layer, 6, N-type
Limiting layer, 7, lower limit layer, 8, lower waveguide layer, 9, multiple quantum wells, 10, upper ducting layer, 11, upper limiting layer, 12, corrosion blocking
Layer, 13, p-type limiting layer, 14, contact electrode layer.
Specific implementation mode
In being described below, for illustration and not for limitation, it is proposed that such as tool of particular system structure, technology etc
Body details, so as to provide a thorough understanding of the present application embodiment.However, it will be clear to one skilled in the art that there is no these specific
The application can also be realized in the other embodiments of details.
It should be appreciated that ought use in this specification and in the appended claims, the instruction of term " comprising " is described special
Sign, entirety, step, operation, the presence of element and/or component, but be not precluded one or more of the other feature, entirety, step,
Operation, element, component and/or its presence or addition gathered.
It is also understood that the term used in this present specification is merely for the sake of the mesh for describing specific embodiment
And be not intended to limit the application.As present specification and it is used in the attached claims, unless on
Other situations are hereafter clearly indicated, otherwise " one " of singulative, "one" and "the" are intended to include plural form.
It will be further appreciated that the term "and/or" used in present specification and the appended claims is
Refer to any combinations and all possible combinations of one or more of associated item listed, and includes these combinations.
In order to illustrate technical solution described herein, illustrated below by specific embodiment.
As a kind of semiconductor laser for originally declaring offer, which may include：
Substrate (1), the buffer layer (2) being equipped with from the bottom to top on substrate (1), N-type limiting layer (6), lower limit layer (7),
Lower waveguide layer (8), multiple quantum wells (9), upper ducting layer (10), upper limiting layer (11), corrosion barrier layer (12), p-type limiting layer
(13) and contact electrode layer (14), which is characterized in that at least two are equipped between the buffer layer (2) and the N-type limiting layer (6)
Layer extension ducting layer.
The embodiment of the present application is extended light field by the way that two layers of extension ducting layer is arranged between buffer layer and N-type limiting layer
To the region, play the role of extending near field hot spot, to reduce the far-field divergence angle of semiconductor laser, improves coupling effect
Rate.
Fig. 1 is the structural schematic diagram of another semiconductor laser provided by the embodiments of the present application, this is partly led as shown in the figure
Body laser is set gradually from the bottom to top：
Substrate (1), the growth for carrying out semiconductor laser layers of material on it, substrate in the embodiment of the present application
(1) use the InP materials in N-type (100) face, the InP materials in N-type (100) face that can be conducive to the injection of electronics, reduce lining
The series resistance of bottom material can improve the transformation efficiency of semiconductor laser.
Buffer layer (2) is produced on substrate (1), and buffer layer (2) uses N-type InP materials, the material one with substrate (1)
Cause, it is therefore an objective to form the epitaxial surface of high quality, reduce the stress of substrate (1) and other each layers, the defect of elimination substrate (1) to
The propagation of other each layers is conducive to the growth of the material of device other each layers, and finally formed epitaxial material crystal quality is good, defect
It is few,.
Lower extension ducting layer (3), using N-type InGaAlAs materials, the lower extension ducting layer (3) is higher using having
The N-type InGaAlAs materials of refractive index can make the light field that multiple quantum wells (9) generates extension one from upper extension ducting layer (5)
In part to lower extension ducting layer (3), play the role of extending near field hot spot, to reduce the far-field divergence angle of laser.
Separation layer (4) can be separated lower extension waveguide (3) and upper extension ducting layer (5) using N-type InP materials,
Light field widens.In practical application, separation layer (4) can also use the material for being conducive to reduce dislocation.
Upper extension ducting layer (5), using N-type InGaAlAs materials, the upper extension ducting layer, which uses, has higher folding
The N-type InGaAlAs materials for penetrating rate can make the light field that multiple quantum wells (9) generates from lower waveguide layer (8) and upper ducting layer (10)
Between region in extend a part to extension near field hot spot in upper extension ducting layer (5), is played the role of, to reduce laser
The far-field divergence angle of device.
N-type limiting layer (6) can effectively hinder the diffusion and drift of electronics using N-type InP materials, and limit light field
Extension of the transverse mode to the N-type limiting layer (6) reduces potential barrier to reduce the loss of light, reduce voltage loss.
Lower limit layer (7) can effectively hinder the diffusion and drift of electronics using N-type AlGaInAs materials, and limit
Extension of the light field transverse mode to the lower limit layer (7) reduces potential barrier to reduce the loss of light, reduce voltage loss.
Lower waveguide layer (8) can reinforce the limitation to light field using undoped AlGaInAs materials.
Multiple quantum wells (9) is made of 5 Quantum Well and 6 bases, using undoped AlGaInAs materials, as laser
The active area of device provides enough gains of light, and determines the excitation wavelength of device and the service life of device.
Upper ducting layer (10) can reinforce the limitation to light field using undoped AlGaInAs materials.
Upper limiting layer (11) can effectively hinder the diffusion and drift of electronics using p-type AlInAs materials, and limit
Extension of the light field transverse mode to this layer reduces potential barrier to reduce the loss of light, reduce voltage loss.
Corrosion barrier layer (12) can play corruption using the InGaAsP materials of p-type in subsequent chips in etching technique
Lose the effect of blocking.
P-type limiting layer (13) can effectively hinder the diffusion and drift of electronics using the InP materials of p-type, and limit
Extension of the light field transverse mode to this layer reduces potential barrier to reduce the loss of light, reduce voltage loss.
Contact electrode layer (14), using the p-type InGaAs materials of heavy doping.Can in subsequent technology for preparing electrode with
Electrode material forms good Ohmic contact, to reduce series resistance, improves the transfer efficiency of device.
The p-type limiting layer (13) and the contact electrode layer (14) are arranged in the longitudinal direction of the corrosion barrier layer (12)
Portion constitutes ridge waveguide, and the width of the ridge waveguide is 2.5um, depth 1.8um.
It is described it is lower extension ducting layer (3) thickness be 0.1 μm~0.2 μm, for example, 0.12 μm, 0.14 μm, 0.16 μm,
0.18μm.The thickness of the separation layer (4) is 0.4 μm~0.8 μm, for example, 0.5 μm, 0.6 μm, 0.7 μm.The upper extension wave
The thickness of conducting shell (5) is 0.1 μm~0.2 μm, for example, 0.12 μm, 0.14 μm, 0.16 μm, 0.18 μm.
As the another embodiment of the application, the thickness of the lower extension ducting layer (3) can be 0.15 μm, the separation layer
(4) thickness can be 0.6 μm, and the thickness of the upper extension ducting layer (5) can be 0.12 μm.
The thickness of the lower waveguide layer (8) is 0.05 μm~0.15 μm, and the thickness of the upper ducting layer (10) is 0.05 μm
~0.15 μm, the distance between the upper extension ducting layer (5) and the multiple quantum wells (9) are 1 μm~2 μm.
As the another embodiment of the application, the thickness of the lower waveguide layer (8) is 0.1 μm, the upper ducting layer (10)
Thickness is 0.1 μm, and the distance between the upper extension ducting layer (5) and the multiple quantum wells (9) are 1.4 μm.
Table 1 is another semiconductor laser provided by the embodiments of the present application, and the sequence in table 1 from top to bottom is semiconductor
The sequence of laser from top to bottom, every a line in table 1 represent one layer and this layer of correspondence in semiconductor laser device epitaxial wafer
Material composition and thickness.
| Epitaxial layer serial number | Material component | Thickness (μm) |
| Contact electrode layer (14) | InGaAs | 0.2 |
| P-type limiting layer (13) | InP | 1.6 |
| Corrosion barrier layer (12) | InGaAsP | 0.02 |
| Upper limiting layer (11) | AlGaInAs | 0.1 |
| Upper ducting layer (10) | AlGaInAs | 0.1 |
| Multiple quantum wells (9) | AlGaInAs | |
| Lower waveguide layer (8) | AlGaInAs | 0.1 |
| Lower limit layer (7) | AlGaInAs | 0.1 |
| N-type limiting layer (6) | InP | 1.2 |
| Upper extension ducting layer (5) | InGaAlAs | 0.12 |
| Separation layer (4) | InP | 0.6 |
| Lower extension ducting layer (3) | InGaAlAs | 0.15 |
| Buffer layer (2) | InP | 0.5 |
| Substrate (1) | The InP in N-type (100) face |
Another semiconductor laser provided by the embodiments of the present application of table 1
The embodiment of the present application is designed using unilateral twin-guide prolongation structure, by the light field that generates multiple quantum wells from lower wave
In region between conducting shell and upper ducting layer, the region between an extension part to upper extension ducting layer and lower extension ducting layer
In, play the role of extension near field hot spot and improves coupling efficiency to reduce the far field vertical divergence angle of laser；It is described
Upper extension ducting layer and lower extension ducting layer are carried using InGaAlAs materials due to the high refractive index characteristic of InGaAlAs materials
The high consistency of the semiconductor laser chip angle of divergence, improves chip yield；InGaAlAs material systems, additionally it is possible to carry
High internal electron limitation, improves characteristic when hot operation, without increasing refrigerator, is more suitable for non-brake method work；Ridge waveguide
Design structure replace traditional buried heterostructure structure, technical process simplify, reduce chip manufacturing cost and improve chip at
Product rate.
Also need to explanation is a little that unilateral twin-guide prolongation structure is used in the embodiment of the present application, i.e., original
In region other than between upper ducting layer and lower waveguide layer, side (unilateral) expands (the upper extension of two ducting layers again wherein
Ducting layer and lower extension ducting layer), in practical application, can also between original upper ducting layer and lower waveguide layer other than area
In domain, in both sides, (bilateral) expands two ducting layers (above extending ducting layer and lower extension ducting layer) again.Expand in one side of substrate
The upper extension ducting layer and lower extension ducting layer of exhibition are located between buffer layer and the N-type limiting layer, are clicking contact layer side
The upper extension ducting layer and lower extension ducting layer of extension are between p-type limiting layer and contact electrode layer.Pass through bilateral twin-guide
The effect that prolongation structure can further function as extension near field hot spot carries to reduce the far field vertical divergence angle of laser
The high effect of coupling efficiency.
Embodiment described above is only to illustrate the technical solution of the application, rather than its limitations；Although with reference to aforementioned reality
Example is applied the application is described in detail, it will be understood by those of ordinary skill in the art that：It still can be to aforementioned each
Technical solution recorded in embodiment is modified or equivalent replacement of some of the technical features；And these are changed
Or replace, the spirit and scope of each embodiment technical solution of the application that it does not separate the essence of the corresponding technical solution should all
Within the protection domain of the application.
Claims (10)
1. a kind of semiconductor laser, including：Substrate, the buffer layer being equipped with from the bottom to top on substrate, N-type limiting layer, lower limit
Preparative layer, lower waveguide layer, multiple quantum wells, upper ducting layer, upper limiting layer, corrosion barrier layer, p-type limiting layer and contact electrode layer,
It is characterized in that, at least two layers extension ducting layer is equipped between the buffer layer and the N-type limiting layer.
2. semiconductor laser as described in claim 1, which is characterized in that between the buffer layer and the N-type limiting layer
It is equipped with upper extension ducting layer and lower extension ducting layer from the bottom to top.
3. semiconductor laser as claimed in claim 2, which is characterized in that the upper extension ducting layer and the lower extension wave
Separation layer is equipped between conducting shell.
4. semiconductor laser as claimed in claim 3, which is characterized in that the lower extension ducting layer is N-type InGaAlAs
Material, the separation layer are N-type InP materials, and the upper extension ducting layer is N-type InGaAlAs materials.
5. semiconductor laser as claimed in claim 3, which is characterized in that the thickness of the lower extension ducting layer is 0.1 μm
~0.2 μm, the thickness of the separation layer is 0.4 μm~0.8 μm, and the thickness of the upper extension ducting layer is 0.1 μm~0.2 μm.
6. semiconductor laser as claimed in claim 5, which is characterized in that the thickness of the lower extension ducting layer is 0.15 μ
The thickness of m, the separation layer are 0.6 μm, and the thickness of the upper extension ducting layer is 0.12 μm.
7. semiconductor laser as described in claim 1, which is characterized in that the p-type limiting layer and the contact electrode layer
The longitudinal middle part being arranged in the corrosion barrier layer constitutes ridge waveguide, and the width of the ridge waveguide is 2.5um, depth 1.8um.
8. semiconductor laser as described in claim 1, which is characterized in that the thickness of the lower waveguide layer be 0.05 μm~
0.15 μm, the thickness of the upper ducting layer is 0.05 μm~0.15 μm, between the upper extension ducting layer and the multiple quantum wells
Distance be 1 μm~2 μm.
9. semiconductor laser as claimed in claim 8, which is characterized in that the thickness of the lower waveguide layer is 0.1 μm, described
The thickness of upper ducting layer is 0.1 μm, and the distance between the upper extension ducting layer and the multiple quantum wells are 1.4 μm.
10. semiconductor laser as described in claim 1, which is characterized in that the lower waveguide layer, the multiple quantum wells and institute
It states ducting layer and is all made of undoped AlGaInAs materials, the lower limit layer uses N-type AlGaInAs materials.
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| CN201810510712.6A CN108539578B (en) | 2018-05-24 | 2018-05-24 | A kind of semiconductor laser |
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Citations (4)
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|---|---|---|---|---|
| US20090016396A1 (en) * | 2007-07-09 | 2009-01-15 | Tien-Chang Lu | Structure of high power edge emission laser diode |
| CN103166108A (en) * | 2013-03-15 | 2013-06-19 | 中国科学院半导体研究所 | Edge-emitting crystal laser with circular spot output and low divergence angle and composite waveguide device |
| CN104466675A (en) * | 2014-12-15 | 2015-03-25 | 中国电子科技集团公司第十三研究所 | Narrow-divergence-angle ridge waveguide semiconductor laser |
| CN107732656A (en) * | 2017-10-26 | 2018-02-23 | 海南师范大学 | A kind of Low threshold small divergence angle 980nm semiconductor laser epitaxial structures |
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2018
- 2018-05-24 CN CN201810510712.6A patent/CN108539578B/en active Active
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|---|---|---|---|---|
| US20090016396A1 (en) * | 2007-07-09 | 2009-01-15 | Tien-Chang Lu | Structure of high power edge emission laser diode |
| CN103166108A (en) * | 2013-03-15 | 2013-06-19 | 中国科学院半导体研究所 | Edge-emitting crystal laser with circular spot output and low divergence angle and composite waveguide device |
| CN104466675A (en) * | 2014-12-15 | 2015-03-25 | 中国电子科技集团公司第十三研究所 | Narrow-divergence-angle ridge waveguide semiconductor laser |
| CN107732656A (en) * | 2017-10-26 | 2018-02-23 | 海南师范大学 | A kind of Low threshold small divergence angle 980nm semiconductor laser epitaxial structures |
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