CN107171179A - The serial semiconductor optical amplifier of multi-electrode - Google Patents
The serial semiconductor optical amplifier of multi-electrode Download PDFInfo
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- CN107171179A CN107171179A CN201710568929.8A CN201710568929A CN107171179A CN 107171179 A CN107171179 A CN 107171179A CN 201710568929 A CN201710568929 A CN 201710568929A CN 107171179 A CN107171179 A CN 107171179A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32333—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm based on InGaAsP
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- Optics & Photonics (AREA)
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Abstract
Present disclose provides a kind of serial semiconductor optical amplifier of multi-electrode, including：Substrate；N faces electrode, is formed at the first surface of substrate；N-type sandwich construction, is formed at the second surface of substrate, including：N-type lower limit layer, is formed on substrate；N-type ducting layer, is formed on n-type lower limit layer；Active layer, is formed on n-type sandwich construction；P-type sandwich construction, is formed on active layer, including：P-type boundary layer, is formed on active layer；P-type upper limiting layer, is formed on p-type boundary layer；P-type ohmic contact layer, is formed on p-type p-type upper limiting layer；P faces electrode, is formed on p-type sandwich construction, it includes：N number of consecutive electrode, for making carrier from each consecutive electrode while being injected into active area, wherein, N >=2.Injected by multi-electrode series current multiple spot, it is possible to resolve the heat dissipation problem of high power semi-conductor image intensifer, improve photoelectric transformation efficiency.
Description
Technical field
This disclosure relates to semiconductor optical amplifier technical field, more particularly to a kind of serial semiconductor light of high-power multi-electrode
Amplifier.
Background technology
Amplifier is the Primary Component that can be amplified to optical signal in optical fiber telecommunications system.With semiconductor laser and
The continuous improvement of Transmission Fibers performance, the U.S. carried out the field test of fiber optic communication in Atlanta in 1975；1976
New York-Chicago, New York-Bostonian Commercial fibers communication system are opened in succession.The low-loss of optical fiber has optical signal
Transmission range length, message capacity are huge, cost is low and the advantages of strong security, this causes fiber optic communication to be developed rapidly.For
The loss in long-distance optical fiber communication is solved the problems, such as, must add " optical-electrical-optical " relay station, its function every several kilometers
It is that will receive to be changed into electric signal by the signal photo-detector of optical fiber attenuation, then electric signal is put with the method for electricity
Big and regeneration, then re-modulation continue to transmit to being transformed into optical signal on laser, it is evident that this trunking scheme is added greatly
The equipment of amount and the cost in place, and this trunking scheme can only be directed to some specific bit rate and operation wavelength, it is right
Signal transmission link causes bottleneck.Therefore the thinking for needing searching new realizes that high-performance optical is amplified.With the hair of optical device technology
Exhibition, replaces " optical-electrical-optical " trunking scheme with image intensifer, and the optical signal for transmitting and decaying through optical fiber is directly used into image intensifer
The conception of amplification is arisen at the historic moment.
Needed in terms of communication, laser radar and imaging, high performance microwave photon (MWP) connection and analogue signal processor
High-power image intensifer, is international research focus in recent years.Image intensifer is essential device in all optical communication, number
According to the communication network of fast development requirement more high speed and the Large Copacity of communication service, this causes all optical communication imperative, and
Wherein Optical Amplification Technology has irreplaceable status.The high-power image intensifer used in satellite spatial optic communication, which is mainly, to be mixed
Doped fiber amplifier (EDFA), at present, the power more than 150W can be provided by having been reported the EDFA in 1.55 mum wavelength areas, 50W's
EDFAs commercializations.Although fiber amplifier has larger power output, their size and weight also than larger,
Because optical pumping efficiency is low, power consumption big, so its power conversion efficiency is low (general ＜ 10%), it is often more important that fiber amplifier
Anti-radiation performance it is poor, cause its performance degradation than very fast.The irradiation that one satellite capsule is born every year is 8,000,000 Naders,
And EDFA power under the irradiation of 20,000 Naders will decay half, and its life-span remote 15-20 for not reaching satellite communication, because
This EDFA is difficult the demand for meeting New System.
Semiconductor optical amplifier has direct electrical pumping to produce gain, low in energy consumption, small volume, lightweight, cheap, wavelength
Flexibly, gain band is roomy, and be easy to other semiconductor devices (such as laser, detector, modulator) it is integrated the features such as, more
It is important that semiconductor optical amplifier (SOAs) also has very strong radiation-resisting performance.Make to join for this and current EDFA performance
According to improving the performance of semiconductor optical amplifier with learning from other's strong points to offset one's weaknesses, especially by material modification, structure change, reduction and optical fiber
Coupling loss, improve saturation output power, reduction noise and polarization sensitivity, then semiconductor optical amplifier is logical in spatial light
It is hopeful to substitute fiber amplifier in letter.
Volume, light restriction factor and the internal loss of semiconductor amplifier active area be determine its power output it is main because
Element.The SOAs of early stage, also refers to semiconductor laser amplifier (SLAs), is that end face coating anti reflection film and waveguide tilt compacting lasing
Simple laser structure.In these SOAs, vertical direction and lateral light limitation limiting structure (SCH) respectively and etching ridge
Type waveguide is obtained.In traditional ridge waveguide structure, in order to realize single mode operation, the width of active area materials is generally limited
To 2-3 μm, light restriction factor is than larger, even if by shortening chamber length, reducing restriction factor and gain recovery time, its output work
Rate only has 100mw or so.From semiconductor optical amplifier in theory, the width and height of saturation output power and active area into
Direct ratio, is inversely proportional with light restriction factor, therefore, improves saturation output power and mainly passes through two approach：Increase the face of active area
Product and reduction light restriction factor.
Although the wide waveguiding structure of taper adds SOAs gain areas, high power is realized, by dynamic with gain waveguide
The unstable and required complicated optical system limitation of the related light beam of mechanics, mode competition, light field is difficult to be efficiently couple to list
In mode fiber.Typical taper SOAs and single-mode fiber coupling efficiency only have 50%.So actual saturation output power is maximum
The only half of chip.Due to the SOAs light restriction factor and internal loss coefficient and ridge waveguide structure of usual pyramidal structure
SOAs is similar, therefore, and taper SOAs can not improve saturation output power by reducing internal loss and light restriction factor.And
Because high power semi-conductor image intensifer saturation output power is high, operating current is big, and the local heat power consumption that produces is big, causes device mistake
Early saturation is even impaired.
Disclosure
(1) technical problem to be solved
Present disclose provides a kind of serial semiconductor optical amplifier of multi-electrode, at least partly to solve skill set forth above
Art problem.
(2) technical scheme
Present disclose provides a kind of serial semiconductor optical amplifier of multi-electrode, including：Substrate；N faces electrode, is formed at substrate
First surface；N-type sandwich construction, is formed at the second surface of substrate, including：N-type lower limit layer, is formed on substrate；N-type
Ducting layer, is formed on n-type lower limit layer；Active layer, is formed on n-type sandwich construction；P-type sandwich construction, is formed at active
On layer, including：P-type boundary layer, is formed on active layer；P-type upper limiting layer, is formed on p-type boundary layer；P-type Ohmic contact
Layer, is formed on p-type p-type upper limiting layer；P faces electrode, is formed on p-type sandwich construction, it includes：N number of consecutive electrode, is used for
Make carrier from each consecutive electrode while being injected into active area, wherein, N >=2.
In the disclosure some embodiments, N number of consecutive electrode is arranged on the both sides centered on electrode contact table top, uniformly
Distribution, carrier injects active area simultaneously by each shape identical consecutive electrode respectively.
In the disclosure some embodiments, p faces electrode includes strip electrode window, N number of consecutive electrode and titanium dioxide
Silicon materials, N number of consecutive electrode is connected to strip electrode window, and the strip electrode window is arranged on p-type ohmic contact layer, string
Row electrode is arranged on earth silicon material.
In the disclosure some embodiments, p faces electrode is titanium platinum material, for p faces electrode using first scheming
Shape buries version photoetching, then prepared by the method for Lift-off.Distance is 5-10 μm between each consecutive electrode.
In the disclosure some embodiments, the serial semiconductor optical amplifier of described multi-electrode, in addition to：Double ditch structures,
It is etched to by p-type ohmic contact layer in n-type ducting layer, forming ridge both sides has shape between the waveguiding structure of side raceway groove, double ditches
Into table top, double ditches are interior, side wall all fills insulating medium layer.
In the disclosure some embodiments, the substrate uses n-type InP substrate.
In the disclosure some embodiments, the active layer material is InGaAsP materials or AlGaAsP materials.
In the disclosure some embodiments, the n-type sandwich construction, in addition to：N-type buffer layer, the N-type buffer layer is formed
It is being formed between substrate and n-type lower limit layer；The p-type sandwich construction, in addition to：P-type transition zone, is formed at the p-type upper limit
Between preparative layer and p-type ohmic contact layer.
In the disclosure some embodiments, N-type buffer layer is the InP of 1 μm of the extension on substrate, doping concentration and substrate
(10) it is identical；The material of n-type lower limit layer (22) is InP materials, is grown using gradually changed refractive index, and refractive index is from 2 × 1018To 5
×1016cm-3, 1-1.5 μm of thickness；N-type waveguide layer material is generally low-doped InGaAsP materials, and waveguide layer thickness is 4.5-
5.5 μm, refractive index 5 × 1016cm-3；P-type interlayer materials are AlGaAs or AlInAs materials, and thickness is 10-25nm；The p-type upper limit
Preparative layer material is InP materials, is grown using gradually changed refractive index, and refractive index is 2-8 × 1018cm-3, 1-1.5 μm of thickness.
(3) beneficial effect
It can be seen from the above technical proposal that the serial semiconductor optical amplifier of the multi-electrode of the disclosure at least has with following
One of beneficial effect：
(1) by multiple consecutive electrodes at top, Bulk current injection is converted into several electrodes while being injected separately into, so that
Make carrier from each electrode while being injected into active area, therefore can effectively distribute energy, realize low-power consumption, high conversion,
High-power, low noise, it is possible to increase photoelectric transformation efficiency, improves power output；
(2) by multi-electrode serial manner, the hot saturation problem because of caused by local pyrexia is solved, so as to improve
Saturation output power and device stability, extend device lifetime；
(3) due to preparing multi-electrode using Lift-off technology, therefore manufacture craft is simple, and cost is relatively low, is conducive to big
Large-scale production and market application.
Brief description of the drawings
Fig. 1 is device material structural representation in the embodiment of the present disclosure.
Fig. 2 is the serial high power semi-conductor optical amplifier structure schematic diagram of multi-electrode in the embodiment of the present disclosure.
Fig. 3 is p faces distribution of electrodes top view in the embodiment of the present disclosure.
【Embodiment of the present disclosure main element symbol description in accompanying drawing】
10- substrates；
20-n type sandwich constructions
21-n type cushions；22-n type lower limit layers；
23-n type ducting layers；
30- active layers；
40-p type sandwich constructions
41-p type boundary layers；42-p type upper limiting layers；
43-p type transition zones；44-p type ohmic contact layers；
50-p faces electrode
51- silicon dioxide layers；52- strip electrode windows；
53- consecutive electrodes；
60-n faces electrode；
70- insulating medium layers.
Embodiment
Present disclose provides a kind of serial semiconductor optical amplifier of multi-electrode, using multiple transparency electrodes, noted by ion
Enter the restriction effect of restricted area, the carrier that Different electrodes inject is injected into the corresponding transverse mode mould of surface-emitting laser active area
At formula, so as to realize the modulation respectively to the different transverse modes of laser.
For the purpose, technical scheme and advantage of the disclosure are more clearly understood, below in conjunction with specific embodiment, and reference
Accompanying drawing, the disclosure is further described.
The some embodiments of the disclosure will be done with reference to appended accompanying drawing in rear and more comprehensively describe to property, some of but not complete
The embodiment in portion will be illustrated.In fact, the various embodiments of the disclosure can be realized in many different forms, and it should not be construed
To be limited to this several illustrated embodiment；Relatively the disclosure is caused to meet applicable legal requirement there is provided these embodiments.
Fig. 1 is the serial high power semi-conductor optical amplifier structure schematic diagram of multi-electrode in the embodiment of the present disclosure.In the disclosure
First exemplary embodiment in there is provided a kind of serial semiconductor optical amplifier of multi-electrode, the device material of the present embodiment
Including：Substrate 10；N faces electrode 60, is formed at the first surface of substrate 10；N-type sandwich construction 20, is formed at the second of substrate 10
Surface；Active layer 30, is formed on n-type sandwich construction；P-type sandwich construction 40, is formed on active layer 30；P faces electrode 50, shape
Into on p-type sandwich construction 40, it includes：N number of consecutive electrode 53, for making carrier from each consecutive electrode while being injected into
Active area, N >=2.
The disclosure is serially injected using multi-electrode by electric current multiple spot, it is possible to resolve the radiating of high power semi-conductor image intensifer
Problem, improves photoelectric transformation efficiency, reduces power consumption, reduces noise, improves power output, can also improve device stability and longevity
Life.
Serial each part of high power semi-conductor image intensifer of multi-electrode of the present embodiment is carried out in detail individually below
Thin description.
Fig. 1 is device material structural representation in the first embodiment of the present disclosure.Below in conjunction with Fig. 1, to being served as a contrast in the present embodiment
Bottom 10, n-type sandwich construction 20, active layer 30 and p-type sandwich construction 40 are illustrated.
Substrate 10, for growing each epitaxial film materials of amplifier thereon, generally using the n-type InP substrate in (100) face.
N-type sandwich construction, including：N-type buffer layer 21, n-type lower limit layer 22, n-type ducting layer 23.
In the present embodiment, N-type buffer layer 21 is formed over the substrate 10, for making the more preferable epitaxial material of substrate growth, is adjusted
Whole substrate doping, the defect that buffering substrate is produced reduces the stress of epitaxial layer, improves the flatness of extension, reduce dislocation, improves
Epitaxial quality.N-type buffer layer 21 is the InP of 1 μm or so of extension over the substrate 10, and doping concentration is identical with substrate 10.
In the present embodiment, n-type lower limit layer 22 is formed on N-type buffer layer 21, to limit light field transverse mode to cushion
Diffusion, reduces the loss of light, while also functioning to the effect of limiting carrier diffusion, reduces leakage current, reduces threshold value, improves effect
Rate.The material of n-type lower limit layer 22 is generally the InGaAsP materials of InP materials, such as n-type doping, is given birth to using gradually changed refractive index
Long, refractive index is from 2 × 1018To 5 × 1016cm-3, 1-1.5 μm of thickness.
N-type ducting layer 23 is formed on n-type lower limit layer 22, and it is the single-mode field for being coupled with source region that it, which is acted on, and increase is hung down
Nogata near field spot size, filter multi-mode cavity fields, improve beam quality, realize big circular symmetry hot spot, improve coupling
Efficiency, while the low-doped absorption loss for reducing ducting layer to light, thick ducting layer can reduce light restriction factor in addition.N-type ripple
Conducting shell material 23 is generally low-doped InGaAsP materials, and waveguide layer thickness is 4.5-5.5 μm, refractive index 5 × 1016cm-3。
Active layer 30 is formed on n-type ducting layer 23, and active layer is multi-quantum pit structure, is unintentional doping；For carrying
High enough gains, determine the wavelength of device.Active layer material is InGaAsP materials or AlGaAsP materials, by multiple SQWs
Constitute, such as by 3-5 quantum well constitution.
P-type sandwich construction, including：P-type boundary layer 41, p-type upper limiting layer 42, p-type transition zone 43 and p-type ohmic contact layer
44。
P-type boundary layer 41 is formed on active layer 30, to limit diffusion of the upper strata heavy doping to active area.P-type interface
41 material of layer are AlGaAs or AlInAs materials, and thickness is 10-25nm；
P-type upper limiting layer 42 is formed on p-type boundary layer 41, and the light field for limiting active area reduces electricity to outward leakage
Sub- leakage current, lowers threshold value, improves efficiency.The material of p-type upper limiting layer 42 is InP materials, is grown using gradually changed refractive index, 2-8
×1018cm-31-1.5 μm of thickness；
P-type transition zone 43 is formed on p-type upper limiting layer 42, following upper limiting layer and Ohmic contact above for reducing
The stress of layer improves epitaxial quality；
P-type ohmic contact layer 44 is formed on p-type transition zone 43, for the Ohmic contact realized, reduces series resistance,
Improve device conversion efficiency.P-type ohmic contact layer 44 reduces series resistance and is generally heavy doping to improve electric conductivity.
The serial semiconductor optical amplifier of disclosure multi-electrode allows to produce high-order mode, but passes through itself coupled waveguide specially
Property suppresses high-order mode, so that implementation pattern is filtered, realizes fundamental transverse mode.The serial semiconductor optical amplifier light of disclosure multi-electrode
Waveguiding structure does not have p-type ducting layer, effectively reduces devices in series resistance, improves the conversion efficiency of device, special coupling
Act on and the optical field distribution of amplifier is all coupled in following thick low-doped n-type ducting layer, ducting layer is thicker, fundamental transverse mode
In vertical similar with the spot size in parallel direction, facula area increase, that is, the area of gain media is added, obtained big
Symmetrical optical pattern so that saturation output power is high.Due to the serial semiconductor optical amplifier active area amount of disclosure multi-electrode
The thickness of sub- trap is small, the special construction of ducting layer, thick and refractive index is low, so that light field can be leaked in lower waveguide layer, because
This restriction factor is small, and saturation output power is inversely proportional with restriction factor, therefore can realize high-power.
Further, the serial semiconductor optical amplifier output light mould field of disclosure multi-electrode is matched with fiber mode, can be with
It is coupled directly into optical fiber.The refractive index of waveguide is lower than active area so light field pattern is revealed to the low direction of refractive index, entirely
Pattern all forms circular light field mode in the waveguide, can design flat board Coupled Passive Waveguide Structure according to the size of optical fiber output pattern
Size, realize that output facula is consistent.
Fig. 2 is the serial high power semi-conductor optical amplifier structure figure of multi-electrode in the disclosure.By using Fig. 1 device material
Material, the lithographic method combined with dry method wet method, it is wide 5 μm to etch table top, deep 4-5 μm, double ditch structures of 5 μm of furrow width, double ditches quarters
In erosion to n-type ducting layer 23, formation ridge both sides have forms table top between the waveguiding structure of side raceway groove, double ditches；- whole
Chip surface grow insulating medium layer 70, usual 1-2 μm of thickness, including in double ditches, side wall all fill insulating medium layer SiO2, use
In limitation electric current injection, prevent leakage from acting on, so as to reduce threshold value, improve efficiency；Electrode window through ray is opened on table top, removes table top
SiO2, expose p-type ohmic contact layer 44；Double 5-10 microns of ditch width, in double ditches filling insulating dielectric materials be silica or
Silicon oxynitride.
The serial semiconductor optical amplifier of multi-electrode of the present embodiment includes：P faces electrode 50 and n faces electrode 60：
P faces electrode 50 is formed on p-type ohmic contact layer 44, is positive electrode, includes silicon dioxide layer 51, strip electrode window
Mouth 52 and multiple consecutive electrodes 53, each electrode injection electric current are identical；P faces electrode 50 is usually titanium platinum material；
N faces electrode 60 is formed below substrate 10, is negative electrode, usually Ni-AU materials.
Fig. 3 is the distribution top view of p faces electrode 50 in the disclosure, and p faces electrode 50 is formed on the table top of double ditch structures, first made
Version photoetching is buried with figure, is prepared using the method for Lift-off, wherein 52 be strip electrode window, 53 be consecutive electrode, altogether
There are 10, its position is uniformly distributed in the both sides centered on electrode contact table top, consecutive electrode shape is identical, carrier point
Active area is not injected simultaneously by each electrode, thermal energy dissipation is realized.As shown in figure 3, consecutive electrode except electrode window through ray below
Outside for p-type ohmic contact layer 44, other places are silicon dioxide layer 51 below；Apart from 5-10 μm between each consecutive electrode, really
Protect between each electrode and mutually disconnect, without disturbing.
The structure of multiple consecutive electrodes at the top of the serial semiconductor optical amplifier of multi-electrode, its position connects with electrode
The both sides centered on table top are touched, are uniformly distributed, carrier injects active area simultaneously by each electrode respectively, realizes heat energy point
Dissipate.
There is saturation output power height compared to existing high power semi-conductor image intensifer, operating current is big, local to produce
The problem of heat power consumption is big, is easily caused the too early saturation of device or even impaired, the disclosure serially passes through electric current multiple spot using multi-electrode
Injection, it is possible to resolve the heat dissipation problem of high power semi-conductor image intensifer, improves photoelectric transformation efficiency, reduces power consumption, reduces noise,
Power output is improved, device stability and life-span can also be improved.
So far, the embodiment of the present disclosure is described in detail combined accompanying drawing.It should be noted that in accompanying drawing or saying
In bright book text, the implementation for not illustrating or describing is form known to a person of ordinary skill in the art in art, and
It is not described in detail.In addition, the above-mentioned definition to each element and method be not limited in mentioning in embodiment it is various specific
Structure, shape or mode, those of ordinary skill in the art simply can be changed or be replaced to it.
It should also be noted that, the direction term mentioned in embodiment, for example " on ", " under ", "front", "rear", " left side ",
" right side " etc., is only the direction of refer to the attached drawing, not for limiting the protection domain of the disclosure.Through accompanying drawing, identical element by
Same or like reference is represented.When understanding of this disclosure may be caused to cause to obscure, conventional structure will be omitted
Or construction.
And the shape and size of each part do not reflect actual size and ratio in figure, and only illustrate the embodiment of the present disclosure
Content.In addition, in the claims, any reference symbol between bracket should not be configured to the limit to claim
System.
Otherwise numerical parameter unless there are known entitled phase in meaning, this specification and appended claims is approximation, energy
Enough required characteristic changings according to as obtained by content of this disclosure.Specifically, it is all to be used in specification and claim
The numeral of the middle content for representing composition, reaction condition etc., it is thus understood that repaiied by the term of " about " in all situations
Decorations.Generally, the implication of its expression refers to include by specific quantity ± 10% change in certain embodiments, at some
± 5% change in embodiment, ± 1% change in certain embodiments, in certain embodiments ± 0.5% change.
Furthermore, word "comprising" does not exclude the presence of element or step not listed in the claims.Before element
Word "a" or "an" does not exclude the presence of multiple such elements.
Similarly, it will be appreciated that in order to simplify the disclosure and help to understand one or more of each open aspect, exist
Above in the description of exemplary embodiment of this disclosure, each feature of the disclosure is grouped together into single implementation sometimes
In example, figure or descriptions thereof.However, the method for the disclosure should be construed to reflect following intention：It is i.e. required to protect
The disclosure of shield requires features more more than the feature being expressly recited in each claim.More precisely, such as following
Claims reflect as, open aspect is all features less than single embodiment disclosed above.Therefore,
Thus the claims for following embodiment are expressly incorporated in the embodiment, wherein each claim is in itself
All as the separate embodiments of the disclosure.
Particular embodiments described above, purpose of this disclosure, technical scheme and beneficial effect have been carried out further in detail
Describe in detail bright, should be understood that the specific embodiment that the foregoing is only the disclosure, be not limited to the disclosure, it is all
Within the spirit and principle of the disclosure, any modification, equivalent substitution and improvements done etc. should be included in the guarantor of the disclosure
Within the scope of shield.
Claims (10)
1. a kind of serial semiconductor optical amplifier of multi-electrode, including：
Substrate (10)；
N faces electrode (60), is formed at the first surface of substrate (10)；
N-type sandwich construction (20), is formed at the second surface of substrate (10), including：
N-type lower limit layer (22), is formed on substrate (10)；
N-type ducting layer (23), is formed on n-type lower limit layer (22)；
Active layer (30), is formed on n-type sandwich construction (20)；
P-type sandwich construction (40), is formed on active layer (30), including：
P-type boundary layer (41), is formed on active layer (30)；
P-type upper limiting layer (42), is formed on p-type boundary layer (41)；
P-type ohmic contact layer (44), is formed on p-type p-type upper limiting layer (42)；
P faces electrode (50), is formed on p-type sandwich construction (40), it includes：N number of consecutive electrode (53), for make carrier from
Each consecutive electrode is injected into active area simultaneously, wherein, N >=2.
2. the serial semiconductor optical amplifier of multi-electrode according to claim 1, wherein, N number of consecutive electrode (53) is arranged on
Both sides centered on electrode contact table top, are uniformly distributed, carrier respectively by each shape identical consecutive electrode simultaneously
Inject active area.
3. the serial semiconductor optical amplifier of multi-electrode according to claim 2, wherein, p faces electrode (50) includes bar
Shape electrode window through ray (52), N number of consecutive electrode (53) and earth silicon material (51), N number of consecutive electrode (53) are connected to bar shaped electricity
Pole window (52), the strip electrode window (52) is arranged on p-type ohmic contact layer (44), and consecutive electrode (53) is arranged at two
On silica material (51).
4. the serial semiconductor optical amplifier of multi-electrode according to claim 3, wherein, p faces electrode (50) is titanium platinum
Golden material, version photoetching is buried for p faces electrode (50) using first figure, then prepared by the method for Lift-off.
5. the serial semiconductor optical amplifier of multi-electrode according to claim 3, wherein, distance is between each consecutive electrode
5-10μm。
6. the serial semiconductor optical amplifier of multi-electrode according to claim 3, in addition to：
Double ditch structures, are etched in n-type ducting layer (23) by p-type ohmic contact layer (44), and forming ridge both sides has side raceway groove
Waveguiding structure, formed between double ditches in table top, double ditches, side wall all fills insulating medium layer (70).
7. the serial semiconductor optical amplifier of multi-electrode according to claim 1, wherein, the substrate (10) is using n-type InP
Substrate.
8. the serial semiconductor optical amplifier of multi-electrode according to claim 1, wherein, active layer (30) material is
InGaAsP materials or AlGaAsP materials.
9. the serial semiconductor optical amplifier of multi-electrode according to claim 1, wherein, the n-type sandwich construction (20), also
Including：
N-type buffer layer (21), the N-type buffer layer (21) is formed between substrate (10) and n-type lower limit layer (22)；
The p-type sandwich construction (40), in addition to：
P-type transition zone (43), is formed between p-type upper limiting layer (42) and p-type ohmic contact layer (44).
10. the serial semiconductor optical amplifier of multi-electrode according to claim 9, wherein,
N-type buffer layer (21) is the InP of 1 μm of the extension on substrate (10), and doping concentration is identical with substrate (10)；
The material of n-type lower limit layer (22) is InP materials, is grown using gradually changed refractive index, and refractive index is from 2 × 1018To 5 ×
1016cm-3, 1-1.5 μm of thickness；
N-type ducting layer (23) material is generally low-doped InGaAsP materials, and waveguide layer thickness is 4.5-5.5 μm, and refractive index 5 ×
1016cm-3；
P-type boundary layer (41) material is AlGaAs or AlInAs materials, and thickness is 10-25nm；
P-type upper limiting layer (42) material is InP materials, is grown using gradually changed refractive index, and refractive index is 2-8 × 1018cm-3, thickness
1-1.5μm。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710568929.8A CN107171179A (en) | 2017-07-13 | 2017-07-13 | The serial semiconductor optical amplifier of multi-electrode |
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| CN111641104A (en) * | 2020-06-29 | 2020-09-08 | 长春理工大学 | Semiconductor laser chip structure |
| CN111682400A (en) * | 2020-06-22 | 2020-09-18 | 苏州长光华芯光电技术有限公司 | Method for manufacturing contact layer, semiconductor laser and manufacturing method thereof |
| CN114256740A (en) * | 2021-12-15 | 2022-03-29 | 华中科技大学 | DFB semiconductor laser |
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