CN100349337C - Method for making semiconductor laser and spot-size converter by double waveguide technology - Google Patents
Method for making semiconductor laser and spot-size converter by double waveguide technology Download PDFInfo
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- CN100349337C CN100349337C CNB2004100810096A CN200410081009A CN100349337C CN 100349337 C CN100349337 C CN 100349337C CN B2004100810096 A CNB2004100810096 A CN B2004100810096A CN 200410081009 A CN200410081009 A CN 200410081009A CN 100349337 C CN100349337 C CN 100349337C
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Abstract
The utility model relates to a method for making a semiconductor laser and a simulation spot converter by the double-waveguide technology. The present invention comprises the following steps: an n-type indium phosphide buffer layer, a lower waveguide layer, a space layer, an active area and a thinner indium phosphide intrinsic layer which prevents the oxidation of the active area orderly epitaxially grow on an n-type indium phosphide substrate; the highest indium phosphide intrinsic layer is removed, a laser part is masked by SiO2, and the shape of an upper ridge of the simulation spot is engraved by wet etching technology; the shape of a lower ridge is engraved by self-registered technology comprises a lower waveguide layer and a space layer; a p-type indium phosphide cover layer and a high-doped p-type indium-gallium-arsenic ohmic electrode contact layer grow in the second time; the simulation spot converter part is masked by SiO2, the shapes of an upper ridge and a lower ridge of the laser part is engraved again, and the upper ridge comprises an active area, a p-type indium phosphide cover layer and a high-doped p-type indium-gallium-arsenic ohmic electrode contact layer; an epitaxial wafer substrate is thinned to 100 mum and are cleavage into tube cores about 250 mum*500 mum by a scribing after a p/n electrode is prepared.
Description
Technical field
The present invention relates to make the method that a kind of novel double waveguide technology is made semiconductor laser and spot-size converter by wet etching commonly used and photoetching process.
Background technology
Most module is made up of III-V compound semiconductor device in the optical fiber telecommunications system.Each semiconductor device will be connected with an optical fiber at least, so that the coupling efficiency between semiconductor photoelectronic device and the optical fiber just seems is very important.For general glass optical fiber, the refractive index difference between its sandwich layer and the cap rock is very little, generally 5 * 10
-3Below.Such waveguiding structure is exactly weak guiding waveguide, the suitable disperse of the distribution of its intrinsic light field, and just the intrinsic hot spot is bigger, and general diameter is about 8-10 μ m.And in the III-V compound semiconductor if reach refringence 5 * 10
-3Below, its component does not just have too big variation basically.For an III-V compound semiconductor waveguiding structure that optimization is good, its refringence is 1 * 10
-2More than, such semiconductor waveguide structure is to guide waveguide by force, and its intrinsic optical field distribution is just comparatively compact, and just the intrinsic hot spot is less, and general diameter is below 2 μ m.In addition, the geometry of the waveguiding structure of glass optical fiber is the cylindrical structure of symmetry, and causing its eigen mode field like this is the round spot of symmetry, and the semiconducting compound waveguide generally is the less rectangle of symmetry, and causing its eigen mode field like this is oval spot.The difference of the size of the eigen mode field between glass optical fiber and the compound semiconductor waveguide and shape has caused the very big mode mismatch between the two like this, coupling efficiency between them is just very low, and the offset tolerance is very little, and the cost of the encapsulation that causes being coupled has accounted for the 80%-90% of the whole cost of opto-electronic device module.In order to improve the coupling efficiency between optical fiber and the semiconductor chip, people have proposed various ways.Such as using lenticule and wedge shape/tapered fiber (referring to N.Kalonji and J.Semo, Electron.Lett., Vol.30, No.11, pp892-894,1994 and H.M.Presby, and C.A.Edawda, Electron.Lett, Vol.28, No.6, pp582-584,1992), but because this method just becomes big to the mode spot-size of light signal, mould shape of spot to device itself does not change, so the offset tolerance is not improved.Another kind method is to add a silica-based waveguides module (referring to Y.Shani between semiconductor photoelectronic device and optical fiber, C.H.Henry, R.C.Kistler and et al, Appl.Phys.Lett.Vol.55, No.23, pp2389-2391,1989, M.Yanagisawa, H.Terui, Y.Yamada and et al, Tech.Dig.Fourth Microoptics Conf.Eleventh Topical Meet.Gradient-index Optical Systems, Kawasaki, Japan, 1993, pp294-297, and J.-M.Cheong, J.-W.Seo, and Y.-K.Jhee, Electron.Lett.Vol.30, No.18, pp1515-1516,1994), this module can change the eigen mode field of semiconductor device into mate with optical fiber mould field, so just can improve the coupling efficiency of device and optical fiber widely, but because the adding of this module the reduction of offset tolerance, the cost of the whole module of so still having no idea to reduce have effectively been caused again.In recent years, people turn to the integrated spot-size converter of monolithic (spot-size-converter is SSC hereinafter to be referred as spot-size converter) on semiconductor photoelectronic device to sight.This SSC can adiabaticly be converted to the asymmetric near field distribution of compound semiconductor device the input or the output near field of symmetry, so both can improve the coupling efficiency between device and the optical fiber, can improve its offset tolerance again.
For high power semiconductor lasers (laser diode is LD hereinafter to be referred as semiconductor laser), integrated spot-size converter also has the another one benefit, except improving coupling efficiency and offset tolerance, can also improve working life and peak power output (referring to T.Murakami, K.Ohtaki, H.Matsubara, and et al, IEEE J of Quantum.Electron, Vol.23, No.6, pp712,1987).In general, the layer structure of low-threshold semiconductor laser is to optimize according to making the overlapping integration of active area and optical mode field reach peaked principle, just makes the restriction factor of active area be the bigger the better.This has just caused the angle of divergence of bigger vertical direction.In order to reduce the angle of divergence of vertical junction in-plane, must make the thickness of active area reduce, certainly will just reduce the gain of active area like this, cause the rising of threshold current.When a spot-size converter is integrated on the laser (amplifier), the vertical direction angle of divergence of hot spot will reduce because of the existence of spot-size converter, can guarantee lower threshold current simultaneously.Simultaneously, because the near field of the output end face of laser, so just makes the power density decline of output face of laser owing to spot-size converter increases, thereby the catastrophic damage of laser, the life-span and the maximum power output of raising laser have been reduced effectively.
Common spot-size converter has three kinds of forms: vertical wedge shape is (referring to Osamu Mitomi, NaotoYoshimoto, Katsuaki Magari, J.Lightwave Technology, Vol.17, pp.1255-1262,1999), horizontal wedge shape is (referring to P.Doussiere, P.Garabedian, C.Graver, IEEE Photon.Technol.Lett, Vol.6, pp.170-172,1994), twi guide structure is (referring to Alexis Lestra, Jean-YvesEmery, IEEE J.Quantum Electro., Vol.3, pp.1429-1440,1997).Three kinds of spot-size converters have pluses and minuses separately: vertical wedge-shaped waveguide thickness gradually changes from the active area to the output end face.The duct width of horizontal wedge shape reduces from the active area to the end face gradually.Twi guide structure is that top active waveguide is horizontal wedge shape, below passive wave guide be responsible for and the optical fiber coupling.For the wedge-shaped waveguide of horizontal direction, can make by the photoetching and the etching process of routine.But the wedge-shaped waveguide of vertical direction is not all right, must use special growth or caustic solution just can obtain.For example adopt selectivity butt joint or adopt gradually that corroding method just can reach, but this method to adopt repeatedly organic metal vapour phase epitaxy (being called for short MOVPE).If the butt joint interface transition of laser and spot-size converter is bad, be easy to inspire multimode, cause far-field divergence angle to degenerate, device is repeated poor simultaneously, is not suitable for large-scale production.And the twi guide structure integrated platform that is active device and passive device, can adopt disposable epitaxial growth to form, can optimize simultaneously the component and the size that go up lower waveguide layer respectively, promptly can the band gap and the size of active waveguide and passive wave guide be optimized respectively.The general waveguide bed thickness of going up is and narrow, and lower waveguide layer is thin and wide.The spatial separation layer of one low-refraction is arranged therebetween, and the thickness of this space layer also can be optimized.The light of last ducting layer carries out phase place by space layer and following waveguide and is coupled, and last ducting layer is made wedge shape in the horizontal direction, transmit certain distance after, last waveguide reaches cut-off condition makes the light of waveguide be coupled to down waveguide adiabaticly.The wedge-type shape of waveguide in the optimization both can reduce loss, can make the contraction in length of device again.Coupling length between the waveguide can be less than 100 μ m up and down, and coupling loss is less than 0.1dB simultaneously.
Though the report of many lasers and spot-size converter single chip integrated device is arranged in the world, the following shortcoming of ubiquity: 1) laser adopts buried structure, the extension increased frequency, and complex process, the reliability of device is low.2) spot-size converter adopts vertical wedge shape, adopts butt-joint (i.e. butt joint) epitaxy technology or technology such as corrosion gradually, and interface processing is very difficult, is easy to multimode occur at the interface, and mode characteristic degenerates, the poor repeatability of element manufacturing, and process allowance is little.3) though laser that has and spot-size converter all adopt the ridge twi guide structure, middle InP space bed thickness reaches 2 μ m, device cost height.4) thus have adopt the alternating growth of InP and InGaAsP to obtain own needed effective refractive index to the following waveguide in the twi guide structure, clearly, this textural anomaly complexity.In order to overcome above-mentioned shortcoming, the present invention designs and has made a kind of novel semiconductor laser and spot-size converter single chip integrated device.Advantages such as this device has the simple maturation of technology, the extension number of times is few, cost of manufacture is low, device performance is good.
Summary of the invention
The purpose of this invention is to provide double waveguide technology and make the method for semiconductor laser and spot-size converter, this method has advantages such as technology is simply ripe, the extension number of times is few, cost of manufacture is low, device performance is good.
The present invention is the method that a kind of double waveguide technology is made semiconductor laser and spot-size converter, it is characterized in that, comprises following making step:
Step 1: epitaxial growth n type indium phosphide resilient coating, lower waveguide layer, space layer, active area and thickness are the indium phosphide intrinsic layer of 30nm successively on n type indium phosphide substrate, and this indium phosphide intrinsic layer can prevent the oxidation of active area;
Step 2: remove uppermost indium phosphide intrinsic layer, use SiO
2Laser is partly sheltered, adopted wet corrosion technique to carve the spot-size converter upper carinate shape;
Step 3: utilize self-registered technology to carve lower carinate shape then, this lower carinate shape comprises lower waveguide layer, space layer;
Step 4: for the second time growing p-type indium phosphide cap rock and highly doped p type indium gallium arsenic Ohmic electrode contact layer;
Step 5: use SiO
2Spot-size converter is partly sheltered, carved the upper and lower ridged shape of laser part again, this upper carinate shape includes source region, p type indium phosphide cap rock and highly doped p type indium gallium arsenic Ohmic electrode contact layer;
Step 6: epitaxial wafer substrate thinning to 100 μ m behind the making p/n electrode, is cleaved into the tube core of 250 μ m * 500 μ m through scribing.
Wherein the thickness of the lower waveguide layer of the described growth of step 1 is between 45nm～50nm, and band gap wavelength is 1.1 μ m or 1.2 μ m, and lower waveguide layer is necessary and the lattice constant match of InP substrate, and n type doping content is 10
18/ cm
3Magnitude; The thickness of space layer should be at 0.15 μ m～0.3 μ m, and n type doping content is 10
17/ cm
3Magnitude; Active area comprises the quantum well in 8 cycles; The thickness of each compressive strain InGaAsP quantum well is 9nm～10nm, and dependent variable is between 0.6%～0.7%; Building is the quaternary InGaAsP, and lattice constant and substrate indium phosphide coupling, and band gap wavelength is 1.1 μ m or 1.2 μ m, and building thick is between 5nm～7nm; The thickness of active area light limiting layer is at 70nm～100nm; Active area undopes.
In step 2, carve the spot-size converter upper carinate shape, must adopt the excessive erosion technology to make the terminal width of spot-size converter active area output less than 0.3 μ m.
During epitaxial growth for the second time, the long thicker p type indium phosphide cap rock of one of the main divisions of the male role in traditional opera, its thickness must be between 2 μ m～2.5 μ m, and doping content is from 10
17/ cm
3Be increased to 10 gradually
18/ cm
3Magnitude.
Wherein when the top and bottom ridge shape strip structure of photoetching laser part and the alignment of ridge up and down of the spot-size converter of die sinking for the first time; Or spot-size converter part directly is carved into one the 3 wide single ridged shape of μ m, etching depth always from the Ohmic electrode contact layer above n type indium phosphide resilient coating.
The advantage of this structure is:
1) compatible ridge waveguide and bury the advantage of waveguide has overcome shortcoming separately simultaneously.
2) descend waveguide not need to carry out repeatedly repeatedly growing of InP and InGaAsP and adjust down the band gap wavelength of waveguide, reduced the growth number of times of LP-MOVPE.
3) need not specially to increase etching stop layer, each layer and InP space layer have all played the effect of etching stop layer naturally in the waveguiding structure when wet etching.
4) making that utilizes conventional wet etching and photoetching process just can finish device need not to adopt expensive photoetching and etching processs such as electron beam graph exposure, and device cost reduces greatly.
5) SSC is insensitive to the wedge shaped end change in size.
6) made full use of quantum size effect, promptly energy level is discrete, and the density of states is stepped distribution, so its internal quantum efficiency is higher, and the differential gain is bigger.
7) make full use of the strain energy band engineering, introduced compressive strain in the active area, further separated heavy hole band and light hole band in the valence band, significantly reduced mutual absorption and auger recombination between the valence band; In addition, the introducing of compressive strain diminishes the heavy hole effective mass, thereby reduces the density of states, causes population to be easy to counter-rotating, thereby reduces noise figure.
8) the light restriction factor of LD is bigger, therefore has the device of suitable length and just can obtain high-gain under the electric current of appropriateness.Therefore the threshold current of this structure is little, power output is big, the slope efficiency height.
9) this structure optimization design degree of freedom is bigger, and the band gap and the size of active waveguide and passive wave guide is optimized respectively, the SSC output end face almost can obtain sub-circular and and the hot spot that almost mates of monomode fiber intrinsic facular model.Far-field divergence angle can reach 14.89 ° and 18.18 ° respectively and the monomode fiber coupling efficiency can reach 3db in level and vertical direction, and 1-dB offset tolerance reaches in level and vertical direction ± and 2.9 and ± 2.56 μ m.
Description of drawings
For further specifying content of the present invention, below in conjunction with accompanying drawing to the manufacture method of device of the present invention and develop obtained result and do comparatively detailed description, wherein
Fig. 1 is the LD-SSC structural representation;
Fig. 2 is the facular model distribution map of laser rear end face (a) and spot-size converter output end face (b);
Fig. 3 is the light one current characteristics curve of laser rear end face (a) and spot-size converter output end face (b);
Fig. 4 is the far-field divergence angle of laser rear end face (a) and spot-size converter output end face (b).
Fig. 5 shelters photolithography plate figure for the LD district.
Fig. 6 goes up waveguide active area photolithography plate for LD-SSC.
Fig. 7 is LD-SSC lower carinate shape and the photolithography plate of opening electrode window through ray.
Embodiment
See also shown in Figure 1ly, a kind of double waveguide technology of the present invention is made the method for semiconductor laser and spot-size converter, comprises following making step:
Step 1: epitaxial growth n type indium phosphide resilient coating 20, lower waveguide layer 30, space layer 40, active area 50 and thickness are the indium phosphide intrinsic layer of 30nm successively on n type indium phosphide substrate 10, and this indium phosphide intrinsic layer can prevent the oxidation of active area; The thickness of the lower waveguide layer 30 of wherein said growth is between 45～50nm, and band gap wavelength is 1.1 or 1.2 μ m, and the lattice constant match of necessary and InP substrate, and n type doping content is 10
18/ cm
3Magnitude; The thickness of space layer 40 should be at 0.15～0.3 μ m, and n type doping content is 10
17/ cm
3Magnitude; Active area 50 comprises the quantum well in 8 cycles; The thickness of each compressive strain InGaAsP quantum well is 9～10nm, and dependent variable is between 0.6%～0.7%; This outwork is the quaternary InGaAsP, its lattice constant and substrate indium phosphide coupling, and band gap wavelength is 1.1 or 1.2 μ m, this outwork is thick to be between 5～7nm; The thickness of active area light limiting layer is 70～100nm; Active area undopes;
Step 2: remove uppermost indium phosphide intrinsic layer, use SiO
2Laser is partly sheltered, adopted wet corrosion technique to carve spot-size converter upper carinate shape 51; The described spot-size converter upper carinate shape 51 that carves must adopt the excessive erosion technology to make the terminal width of spot-size converter active area output less than 0.3 μ m;
Step 3: utilize self-registered technology to carve lower carinate shape then, this lower carinate shape comprises lower waveguide layer 30, space layer 40;
Step 4: for the second time growing p-type indium phosphide cap rock 60 and highly doped p type indium gallium arsenic Ohmic electrode contact layer 70; In secondary epitaxy when growth wherein,, the long thicker p type indium phosphide cap rock of one of the main divisions of the male role in traditional opera, its thickness must be between 2 μ m～2.5 μ m, and doping content is from 10
17/ cm
3Be increased to 10 gradually
18/ cm
3Magnitude;
Step 5: use SiO
2Spot-size converter is partly sheltered, carved the upper and lower ridged shape of laser part again, this upper carinate shape includes source region 50, p type indium phosphide cap rock 60 and highly doped p type indium gallium arsenic Ohmic electrode contact layer 70; Wherein when the type of the vallum up and down structure of photoetching laser part, need as far as possible and the alignment of ridge up and down of the spot-size converter of die sinking for the first time; Also can directly be carved into one the 3 wide single ridged shape of μ m to spot-size converter part, etching depth always from the Ohmic electrode contact layer above n type indium phosphide resilient coating 20;
Step 6: epitaxial wafer substrate 10 is thinned to 100 μ m, make the p/n electrode after, be cleaved into tube core about 250 μ m * 500 μ m through scribing.
The structure of LD-SSC is seen Fig. 1.As seen from Figure 1, this device only needs twice low pressure organic metal vapour phase epitaxy (being called for short LP-MOVPE).LD adopts the ridge twi guide structure, and twi guide structure is buried in the SSC employing.Ridge waveguide technology is simple, and the extension number of times is few, the reliability height; And buried structure can improve the facular model characteristic greatly.So the entire device compatibility ridge waveguide and bury the advantage of waveguide, overcome shortcoming separately simultaneously.The length of LD is 300 μ m, and the length 200 μ m of SSC, the length of entire device is 500 μ m.Wherein active waveguide (adopting the multiple-active-region of the compressive strain) structure that goes up is divided into two parts: in the LD part, and the wide 3 μ m of bar, linearly; The SSC part, bar wide from 3 μ m linear change to 0 μ m, be wedge shape.The bar of passive waveguide down is wide to be 8 μ m, and thickness is about 50nm.The thickness of space layer is about 0.2 μ m.The light of last ducting layer carries out the phase place coupling by space layer and following waveguide: last ducting layer laterally is being wedge shape, transmit certain distance after, last ducting layer reaches cut-off condition makes the light of ducting layer be coupled to down waveguide adiabaticly.In case optical transmission is to waveguide down, then facular model is fully by waveguide decision down.Because the thickness of waveguide is thinner down, band gap wavelength short (1.1 μ m～1.2 μ m), little with the refringence of InP, belong to weak restriction waveguide, it is big that the mode sizes of hot spot becomes gradually.When arriving the output end face of SSC, its mode sizes can be mated (about the about 5 μ m of monomode fiber eigenmodes radius) with the mode sizes of monomode fiber.Thereby improve the coupling efficiency of device and monomode fiber.
This structure composition has utilized ridge waveguide, has buried waveguide, the advantage of active area effect, strain effect and double waveguide technology.Therefore, utilize the LD-SSC of this structure fabrication, have advantages such as power output is big, slope efficiency is high, and far-field divergence angle is little.Manufacture method is very easy simultaneously, only needs LP-MOVPE twice, utilizes conventional photoetching and wet corrosion technique just can finish.It is integrated to utilize this structure can also make the monolithic of semiconductor optical amplifier and spot-size converter and electroabsorption modulator and spot-size converter.
The present invention utilizes LP-MOVPE growing method and conventional photoetching and wet corrosion technique, makes a kind of LD-SSC. making step following (in conjunction with consulting Fig. 1) that can serve as light emitting source on local area network (LAN):
(1) epitaxial growth one deck n type indium phosphide resilient coating 20 and one deck lower waveguide layer 30 (thickness 50nm, band gap wavelength are 1.1 or 1.2 μ m) on n type indium phosphide substrate 10.
(2) growth one deck 0.2 μ m indium phosphide space layer 40.
(3) light limiting layer (thickness 80nm, band gap wavelength are 1.1 or 1.2 μ m) under growth on the space layer 40.
(4) growth compressive strain multiple-active-region (being called for short MQW) 50 on following light limiting layer.
(5) then on growing on the MQW light limiting layer (thickness 80nm, band gap wavelength are 1.1 or 1.2 μ m) and thickness be the indium phosphide intrinsic layer of 30nm.
(6) use SiO
2LD is partly sheltered, adopt wet corrosion technique to carve the SSC upper carinate shape.
(7) utilize self-registered technology to carve down waveguide then.
(8) growing p-type indium phosphide cap rock 60 and highly doped p type indium gallium arsenic (InGaAs) Ohmic electrode contact layer 70.
(9) use SiO
2SSC is partly sheltered, carve the last lower carinate shape of LD part again.
(10) behind epitaxial wafer substrate thinning to 100 μ m, the making p/n electrode, be cleaved into the tube core of 250 μ m * 500 μ m through scribing.
Wherein lower waveguide layer, upper and lower light limiting layer are the quaternary InGaAsP material that is complementary with substrate indium phosphide lattice constant.Active area comprises the active area in 8 cycles.The thickness of each compressive strain InGaAsP active area is 9～10nm, and dependent variable is between 0.6%～0.7%.This outwork is the quaternary InGaAsP, and lattice constant and substrate indium phosphide coupling, and band gap wavelength is 1.1 or 1.2 μ m, and building thick is between 5～7nm.The thickness of p type indium phosphide cap rock should be thicker than 2 μ m, and light enters indium gallium arsenic Ohmic electrode contact layer otherwise have greatly, and is very big to the influence of SSC output facula pattern.
Wherein the last lower carinate shape of SSC and LD both can adopt wet etching or dry etching, also the mode that can adopt dry etching to combine with wet etching.
What this device adopted as seen from Figure 1 is twi guide structure, and LD and SSC utilize twice LP-MOVPE to grow simultaneously and form.The concrete structure of device and size are in existing detailed description in summary of the invention.
Know that by Fig. 2 the facular model size of laser rear end face is respectively 2.52 μ m and 1.08 μ m in level and vertical direction.At the SSC output end face then is 5.31 μ m and 4.1 μ m.By test, the LD rear end face and with the coupling efficiency of monomode fiber be 9dB, and the SSC end face can reach 3dB.LD rear end face 1-dB offset tolerance and is respectively in level and vertical direction ± 2.0 μ m and ± 1.7 μ m, the SSC output end face then be ± 2.0 with ± 1.7 μ m.Hence one can see that, and the LD that has added SSC is all having greatly improved aspect near field facular model size, optical coupling efficiency and the offset tolerance than the LD that does not add SSC.
Know that by Fig. 3 the light-current characteristics of laser rear end face and SSC output end face has tangible asymmetry.The threshold current of device be 40mA. wherein the slope efficiency of laser rear end face be 0.24W/A, and the SSC output be 0.35W/A. therefore, the LD that has SSC has higher slope efficiency than the LD that does not have SSC, promptly slope efficiency also is improved.
As shown in Figure 4, the far-field divergence angle of LD rear end is respectively little 2 8.0 ° and 34.86 ° in level and vertical direction.The SSC end is 14.8 ° and 18.18 °.Hence one can see that, is oval in the hot spot near field of LD rear end face, and almost rounded at the SSC end face.
Entire device is made only needs 3 photolithography plates, i.e. Fig. 5～photolithography plate shown in Figure 7.
Hence one can see that, and this device manufacture method is easy, and is functional, is well suited in the local area network (LAN) of optical fiber communication as light source.
Embodiment
The present invention relates to the manufacture method of a kind of novel LD-SSC.It is characterized in that, comprise following making step:
(1) 2 inch n-InP substrate is after decontamination (using ethanol, trichloroethylene, acetone, ethanol heating to boil successively) → pickling (concentrated sulfuric acid soaked 1 ~ 2 minute) → washing (deionized water rinsing is more than 50 times) → drying processing of strictness, put into the growth room, 655 ℃ of growth temperatures, growth pressure 22mbar, 75 ~ 80 rev/mins of graphite boat rotating speeds.The speed of growth 0.4 ~ 0.7nm/s.
(2) epitaxial growth n type indium phosphide resilient coating (0.5 μ m is thick), lower waveguide layer (thickness 50nm on n type indium phosphide substrate (100) face, band gap wavelength is 1.1 or 1.2 μ m), 0.2 μ m indium phosphide space layer, following light limiting layer (thickness 80nm, band gap wavelength is 1.1 or 1.2 μ m), compressive strain active area active area, go up light limiting layer (thickness 80nm, band gap wavelength are 1.1 or 1.2 μ m) and thin indium phosphide intrinsic layer (30nm is thick).
(3) use 4HCl: 1H
2The hydrochloric acid solution of O removes uppermost indium phosphide intrinsic layer, after drying up,, nitrogen clean sample wash with the acetone of MOS level and ethanol and a large amount of deionized water, uses SiO with thermal oxidation CVD equipment sample surfaces the sheltering about a bed thickness 1500nm of growing then again with about 10 minutes (90 ℃ of heating-up temperatures) of drying oven heating
2
(4) utilize photoetching board to explosure, development shown in Figure 5, remove SiO with HF solution then
2, reach LD is partly sheltered, and the purpose that SSC partly exposes to the open air out.
(5) utilize photolithography plate shown in Figure 6 (cycle is 250 μ m) to carry out gluing, exposure, development, with 311 solution (3H
2SO
4: 1H
2O: 1H
2O
2) remove InGaAsP, etch SSC and go up waveguide shapes.Why be designed to photolithography plate shown in Figure 6, be to consider that the precision of employed mask aligner and the waveguide after the corrosion are the shape of falling from power, utilizing the width of the last waveguide of the SSC part that in fact photolithography plate shown in Figure 6 and excessive erosion technology obtain is that 3 μ m change to about 0.3 μ m linearly, adheres to specification.
(6) remove photoresist with acetone after, recoat and get rid of thick glue, utilize Fig. 7 photolithography plate (cycle is 250 μ m) exposure, develop after, adopt 1Br: 25HBr: 80H
2The solution of O removes InGaAsP and InP, erodes away the lower carinate shape of SSC.Because above-mentioned solution is non-selective corrosive liquid, therefore can measure and accurately estimate corrosion rate by repeatedly corrosion experiment and step instrument, guarantee to erode to till the InP-buffer.Certainly, we also can utilize the natural etching stop layer of device architecture, use 311 solution corrosion InGaAsP layers respectively, 4HCl: 1H
2The solution corrosion InP of O.But like this gradation etching efficient is low, and particularly under 311 solution corrosions during waveguide 1.1Q, etching time is long.
(7) the sample strictness is cleaned up after, be placed on MOCVD chamber growing p-type indium phosphide cap rock and highly doped p type indium gallium arsenic Ohmic electrode contact layer.
(8) use SiO with thermal oxidation CVD equipment sheltering about the sample surfaces grow thick 1500nm second time
2
(9) utilize photolithography plate shown in Figure 5 (cycle is 250 μ m) to carry out gluing, exposure, counter-rotating, development, remove SiO with HF solution then
2, reach SSC is partly sheltered, and the purpose that LD partly exposes to the open air out.The counter-rotating of wherein mentioning is meant after having exposed, and sample is placed in the heating furnace of logical ammonia, disconnects heater switch when being heated to 110 ℃ at once.After spending ten minutes sample taken out to be placed on mask aligner under and exposed 2 minutes.So just, can reach the purpose of counter-rotating.
(10) utilize for the second time photolithography plate (cycle the is 250 μ m) whirl coating, exposure, development of Fig. 6 after, adopt 311 corrosive liquid (3H
2SO
4: 1H
2O: 1H
2O
2) remove InGaAs, erode away the InGaAs shape that LD goes up ridge.About the wide 3 μ m of ridge.
(11) remove photoresist after, whirl coating once more, utilize for the third time Fig. 6 the photoetching board to explosure, develop after, adopt 4HCl: 1H
2The solution corrosion P-InP of O.Obtain the shape that LD goes up ridge P-InP, about the wide 3 μ m of ridge.
(12) remove photoresist with acetone after, recoat and get rid of thick glue, utilize Fig. 7 photolithography plate (cycle is 250 μ m) exposure, develop after, adopt 1Br: 25HBr: 80H
2The solution of O removes InGaAsP and InP, erodes away the lower carinate shape of LD, about the wide 8 μ m of ridge.
(13) remove SiO with HF solution
2, utilize the thermal oxidation CVD equipment thick 350nm SiO that regrows after sample cleaned up again
2Insulating barrier.
(14) utilize Fig. 7 photolithography plate for the second time, adopt self-aligned technology, with HF solution corrosion SiO
2, leave electrode window through ray.
(15) sputter P electrode (Ti/Pt/Au).
(16) the epitaxial wafer substrate is through being thinned to 100 μ m, and n electrode (Au/Ge/Ni) is steamed at the back side.
(17) sample is cleaved into the tube core of 250 μ m * 600 μ m through scribing, and light output end is [011] direction.So far, the technology of finishing entire device is made.
Claims (5)
1. the method that double waveguide technology is made semiconductor laser and spot-size converter is characterized in that, comprises following making step:
Step 1: epitaxial growth n type indium phosphide resilient coating, lower waveguide layer, space layer, active area and thickness are the indium phosphide intrinsic layer of 30nm successively on n type indium phosphide substrate, and this indium phosphide intrinsic layer can prevent the oxidation of active area;
Step 2: remove uppermost indium phosphide intrinsic layer, use SiO
2Laser is partly sheltered, adopted wet corrosion technique to carve the spot-size converter upper carinate shape;
Step 3: utilize self-registered technology to carve lower carinate shape then, this lower carinate shape comprises lower waveguide layer, space layer;
Step 4: for the second time growing p-type indium phosphide cap rock and highly doped p type indium gallium arsenic Ohmic electrode contact layer;
Step 5: use SiO
2Spot-size converter is partly sheltered, carved the upper and lower ridged shape of laser part again, this upper carinate shape includes source region, p type indium phosphide cap rock and highly doped p type indium gallium arsenic Ohmic electrode contact layer;
Step 6: epitaxial wafer substrate thinning to 100 μ m behind the making p/n electrode, is cleaved into the tube core of 250 μ m * 500 μ m through scribing.
2. double waveguide technology according to claim 1 is made the method for semiconductor laser and spot-size converter, it is characterized in that, wherein the thickness of the lower waveguide layer of the described growth of step 1 is between 45nm～50nm, band gap wavelength is 1.1 μ m or 1.2 μ m, and lower waveguide layer is necessary and the lattice constant match of InP substrate, and n type doping content is 10
18/ cm
3Magnitude; The thickness of space layer should be at 0.15 μ m～0.3 μ m, and n type doping content is 10
17/ cm
3Magnitude; Active area comprises the quantum well in 8 cycles; The thickness of each compressive strain InGaAsP quantum well is 9nm～10nm, and dependent variable is between 0.6%～0.7%; Building is the quaternary InGaAsP, and lattice constant and substrate indium phosphide coupling, and band gap wavelength is 1.1 μ m or 1.2 μ m, and building thick is between 5nm～7nm; The thickness of active area light limiting layer is at 70nm～100nm; Active area undopes.
3. double waveguide technology according to claim 1 is made the method for semiconductor laser and spot-size converter, it is characterized in that, in step 2, carve the spot-size converter upper carinate shape, must adopt the excessive erosion technology to make the terminal width of spot-size converter active area output less than 0.3 μ m.
4. double waveguide technology according to claim 1 is made the method for semiconductor laser and spot-size converter, it is characterized in that, during epitaxial growth for the second time, the long thicker p type indium phosphide cap rock of one of the main divisions of the male role in traditional opera, its thickness must be between 2 μ m～2.5 μ m, and doping content is from 10
17/ cm
3Be increased to 10 gradually
18/ cm
3Magnitude.
5. double waveguide technology according to claim 1 is made the method for semiconductor laser and spot-size converter, it is characterized in that, wherein when the top and bottom ridge shape strip structure of photoetching laser part and the alignment of ridge up and down of the spot-size converter of die sinking for the first time; Or spot-size converter part directly is carved into one the 3 wide single ridged shape of μ m, etching depth always from the Ohmic electrode contact layer above n type indium phosphide resilient coating.
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| CN105826815B (en) * | 2016-05-30 | 2019-04-30 | 中国科学院半导体研究所 | 980nm semiconductor laser structure and preparation method |
| CN108447954B (en) * | 2018-03-14 | 2020-03-17 | 中国科学院半导体研究所 | Low-divergence-angle super-radiation light-emitting diode structure |
| CN108616034B (en) * | 2018-04-24 | 2020-06-19 | 中国科学院半导体研究所 | Super-radiation light-emitting diode based on spot-size conversion structure |
| CN110970538B (en) * | 2019-11-22 | 2022-03-15 | 深圳市思坦科技有限公司 | Red light LED epitaxial wafer, LED epitaxial wafer segmentation method and LED epitaxial wafer structure |
| CN111352186A (en) * | 2020-03-12 | 2020-06-30 | 中国科学院半导体研究所 | Photoelectric detector and manufacturing method thereof |
| CN111244756B (en) * | 2020-03-12 | 2021-04-23 | 中国科学院半导体研究所 | Semiconductor laser and method for manufacturing the same |
| CN113093333B (en) * | 2021-04-23 | 2023-04-11 | 南京刻得不错光电科技有限公司 | Spot size converter and photonic device |
| CN114924362A (en) * | 2022-07-20 | 2022-08-19 | 日照市艾锐光电科技有限公司 | Transmitting-receiving bidirectional integrated chip and application thereof in optical bidirectional transmitting-receiving assembly |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000269587A (en) * | 1999-03-17 | 2000-09-29 | Fujitsu Ltd | Optical semiconductor device and manufacture thereof |
| JP2002026449A (en) * | 2000-07-06 | 2002-01-25 | Oki Electric Ind Co Ltd | Semiconductor laser with spot size converter and semiconductor laser array device |
| US6411764B1 (en) * | 1999-11-04 | 2002-06-25 | Samsung Electronics Co., Ltd. | Double core spot size converter using selective area growth and fabricating method thereof |
| CN1437289A (en) * | 2002-02-06 | 2003-08-20 | 中国科学院半导体研究所 | Integration of continuous self-aligning semiconductor photoelectronic device and mode spot converter |
| CN1482492A (en) * | 2002-09-09 | 2004-03-17 | 中国科学院半导体研究所 | Semiconductor photoelectronic device and hybrid wedge-shaped waveguide spot converter integrated component |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000269587A (en) * | 1999-03-17 | 2000-09-29 | Fujitsu Ltd | Optical semiconductor device and manufacture thereof |
| US6411764B1 (en) * | 1999-11-04 | 2002-06-25 | Samsung Electronics Co., Ltd. | Double core spot size converter using selective area growth and fabricating method thereof |
| JP2002026449A (en) * | 2000-07-06 | 2002-01-25 | Oki Electric Ind Co Ltd | Semiconductor laser with spot size converter and semiconductor laser array device |
| CN1437289A (en) * | 2002-02-06 | 2003-08-20 | 中国科学院半导体研究所 | Integration of continuous self-aligning semiconductor photoelectronic device and mode spot converter |
| CN1482492A (en) * | 2002-09-09 | 2004-03-17 | 中国科学院半导体研究所 | Semiconductor photoelectronic device and hybrid wedge-shaped waveguide spot converter integrated component |
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