CN108767656A - Coherent source component - Google Patents
Coherent source component Download PDFInfo
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- CN108767656A CN108767656A CN201810557860.3A CN201810557860A CN108767656A CN 108767656 A CN108767656 A CN 108767656A CN 201810557860 A CN201810557860 A CN 201810557860A CN 108767656 A CN108767656 A CN 108767656A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06821—Stabilising other output parameters than intensity or frequency, e.g. phase, polarisation or far-fields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The present invention discloses a kind of coherent source component, component setting：Beam splitter, from laser array and bundling device；Beam splitter will input light source and be divided into the laser output of the roads n；Make the output laser and input laser frequency having the same and fixed phase deviation of its roads n laser from laser array by injecting locking control；The roads n laser is synthesized into beam of laser output after recently entering bundling device；The component also sets up phase-modulator before the input terminal from laser array or after its output end；Phase-modulator will input its roads n Laser Modulation into the roads the n laser output with same phase；It is directly connected to phase-modulator from laser array or is connect using waveguide, the output end device adjacent thereto of beam splitter is connected using waveguide, and the input terminal device adjacent thereto of bundling device is connected using waveguide.So that the laser of output is provided simultaneously with stable power and low RIN characteristics by improving the structure of component based on the component of the present invention, meet its application demand.
Description
Technical field
The present invention relates to optical field, more particularly to a kind of coherent source component.
Background technology
Semiconductor laser has many advantages, such as that high reliability, small size, high power conversion efficiency, low cost, service life can
Up to 100,000 hours or more, the only several cubic centimetres of volume after encapsulation, power conversion efficiency was up to 50% or more, thus is used extensively
In fields such as imaging, communication, mechanical processings.
For example, the widely applied microwave optical fiber in the communications such as Microwave photonics, laser radar, electronic warfare, field of detecting
Link, output power and the RIN (Relativeintensity noise, relative intensity noise) of light source semiconductor laser
Characteristic has a major impact the indexs such as the spurious-free dynamic range (SFDR) of link, noise coefficient (NF).
However, semiconductor laser keeps high-power simultaneously has larger challenge with low RIN characteristics.Currently, carrying in the world
The main stream approach of its high power is to improve its output power under the premise of ensureing semiconductor laser single mode operation.Specific method packet
It includes：Reduce intra resonant cavity loss, improve modal gain, inhibits fuel factor etc..Based on above method, APIC companies Zhao Y G
Et al. developed to have obtained single output power in 200mW, while RIN is less than -165dB/Hz, and wavelength is near 1550nm
Single mode distributed feedback formula (DFB) laser.But continue improve laser output power, existing technological means without
Method overcomes the influence to single mode laser, RIN characteristics such as spatial hole burning, fuel factor.
Laser array can effectively expanding laser output power, reduction single laser output power is wanted
It asks.Laser technology based on optics coherence tomography is hot research problem in recent years, so that array laser locking phase is exported, to realize light
Beam is concerned with.
The annual meeting of directional energy system and solid that U.S. DEPS is held are led with diode laser technique annual meeting and laser science
The international conferences such as the CLEO and SPIE Photonics West in domain all specially set up optics coherence tomography technology special topic, and what is be related to swashs
Light device includes various types of lasers such as semiconductor laser, optical fiber laser, gas laser.
The optics coherence tomography technology of semiconductor laser, just occurred early in 1970, the U.S. laboratories Bell
Ripper J E et al. realize 2 road GaAs laser locking phases outputs by evanescent wave coupling.
With the development of optics coherence tomography technology, the implementation method of laser optics coherence tomography has also appeared leaky wave coupling,
Talbot exocoels coupling etc., above method use passive Phase Lock Technique, i.e., external need not control, and only lean on the phase between array element
Locking phase is realized in interaction.The difficulty of passive Phase Lock Technique is that the element number of array is limited, and optics coherence tomography effect is with battle array
Column unit quantity increases and weakens, and there is oscillation and multimode operation.In order to overcome problem above, and active locking phase is developed
Technology.
There are mainly two types of active Phase Lock Techniques, the first：First the light of laser is split, then with image intensifer to every
Road light amplification, i.e. MOPA structures；Second similar with the first, and carrying out light using laser after being split difference lies in light puts
Greatly, in order to ensure the coherence of each road light, injection locking technique can be used.
900 tunnels are realized using MOPA structures in nineteen ninety-five McDonnell Douglas companies Joseph Levy et al.
Array optics coherence tomography, near field output power reach 36W.But light new during light amplification, electrical noise, eventually lead to array
RIN characteristics deteriorate.
It is same using a main laser in Lars Bartelt-Berger of Stuttgart universities of Germany in 1999 et al.
When injection 15 discrete slave lasers (abbreviation Lars Bartelt-Berger laser arrays) of locking realize the relevant of array
Beam is closed, but closes the shortcomings of power existing for the laser exported after beam is unstable and RIN characteristics deteriorate.
Therefore, it is badly in need of developing a kind of reliable component at present, can realize the laser output of firm power and inhibits defeated
The RIN features for going out laser, meet its application demand.
Invention content
In view of this, the present invention provides a kind of coherent source component, it is unstable to solve power existing for semiconductor laser
The problem of fixed and noise penalty.
The present invention provides a kind of coherent source component, which sets gradually along the direction of propagation of light：Beam splitter, from laser
Device array and bundling device；
The seed light source of input is divided into the laser output of the roads n by beam splitter；The laser input of the roads n is from laser array, from laser
Device array makes the output laser from the roads the n laser in laser array with input laser with identical by injecting locking control
Frequency and fixed phase deviation；It is synthesized into beam of laser after the roads the n laser input bundling device that laser array exports
Output；
Component is between laser array and beam splitter or from also setting up phase tune between laser array and bundling device
Device processed；Phase-modulator will input its roads n Laser Modulation into the roads the n laser output with same phase；
It is directly connected to phase-modulator from laser array or is connect using waveguide, the output end of beam splitter is adjacent thereto
Device is connected using waveguide, and the input terminal device adjacent thereto of bundling device is connected using waveguide.
The present invention is by improving coherent source modular construction, it is ensured that enters each road laser frequency having the same of bundling device
With identical phase so that the laser of the application relevant source component output is provided simultaneously with stable power and low RIN characteristics, full
Its application demand of foot.
Description of the drawings
Fig. 1 is coherent source component first embodiment of the present invention；
Fig. 2 is coherent source component second embodiment of the present invention；
Fig. 3 a- Fig. 3 j are coherent optical source chip manufacturing process schematic diagram of the present invention.
Specific implementation mode
To make the objectives, technical solutions, and advantages of the present invention clearer, right in the following with reference to the drawings and specific embodiments
The present invention is described in detail.
Since Lars Bartelt-Berger laser arrays exist：Export laser power is unstable, RIN characteristics deteriorate etc.
Problem so that injection locking laser array techniques can not be generalized to always practical application area, seriously hinder the hair of the technology
Exhibition.
Lars Bartelt-Berger laser arrays are made of discrete device, are connected using optical fiber between discrete device,
The present invention analyzes to the system have been further investigations and positions and cause that " power of output is unstable and RIN characteristics are disliked repeatedly
Change " the reason of.It finally found that, the optical fiber for connecting discrete device is temperature sensitive, causes the phase fluctuation that laser is transmitted in optical fiber,
Lead to the array " power of output is unstable ", while phase of each laser itself causes array output to swash there is also difference
" deterioration of RIN characteristics " of light.
Based on this, the present invention improves the prior art, proposes a kind of coherent source component, as shown in Figure 1, the portion
Part includes successively along the direction of propagation of light：Beam splitter (3), from laser array (4) and bundling device (6)；
The seed light source for inputting it is divided into the laser output of the roads n by beam splitter (3)；The roads n laser is inputted from laser array
(4), the output laser for making its roads n laser is controlled with input laser with identical from laser array (4) by injecting to lock
Frequency and fixed phase deviation；From laser array export the roads n laser input again after bundling device (6) be synthesized into it is a branch of
Laser exports；
It is also wrapped in beam splitter (3) and between laser array (4) or between laser array (4) and bundling device (6)
Include phase-modulator (5)；It is defeated at the roads the n laser with same phase that phase-modulator (5) will input its roads n Laser Modulation
Go out；
It is directly connected to phase-modulator (5) from laser array (4) or is connect using waveguide, the output of beam splitter (3)
Device adjacent thereto is held to be connected using waveguide (3-1), the input terminal device adjacent thereto of bundling device (6) is connected using waveguide (6-1)
It connects.
The coherent source component of the present invention, first, ensuring that each road laser into bundling device has phase by injecting locking
Same frequency；It is directly connected to connect with waveguide second, beam splitter is used to the device between bundling device, be connected instead of optical fiber, it can
Avoid the phase fluctuation for causing each road laser, it is ensured that the phase stability of every laser avoids the power swing of synthetic laser；Its
Three, the roads n laser is adjusted by phase-modulator and makes it have identical phase, reduces the RIN features of synthetic laser；Based on above-mentioned
Three features solve the problems, such as that Lars Bartelt-Berger laser arrays exist so that coherent source component of the invention can
The synthetic laser with firm power and low RIN characteristics (good coherence property) of output, meets application demand.
In Fig. 1, multi-mode interference coupler (MMI, multimode can be selected in beam splitter (3) and/or bundling device (6)
Interference coupler), multi-mode interference coupler is miniaturized device, advantageously reduces the overall dimensions of component.Cause
Beam splitter and bundling device functionally have a mirror symmetry relationship, thus can structure having the same, to reduce design and fabrication hardly possible
Degree.
Optionally, beam splitter input terminal and/or bundling device output end configure spot-size converter, to enhance coupling efficiency,
Or the end face of beam splitter input terminal and/or bundling device output end uses inclined end face, to reduce the influence of end face reflection, or
The end face coating anti reflection film of beam splitter input terminal and/or bundling device output end, further to reduce the influence of end face reflection.
Arbitrary structures can be used in waveguide 3-1 and waveguide 6-1, and in Fig. 1, waveguide 3-1 and waveguide 6-1 are curved waveguide knot
Structure.
There are two types of common modulation systems for phase-modulator (5), and one is electrical modulation, another kind is hot modulation, electrical modulation tool
There are the advantages such as modulating speed is fast, thermal power is low, preferably the phase-modulator as the present invention.
Other than the device involved by the coherent source component in Fig. 1, as shown in Fig. 2, injection locking laser array is general
Further include sending out the main laser (1) of seed light source, and the isolator (2) between main laser and beam splitter, main laser
Device and isolator can be integrated on the coherent source component of the application；It can also be replaced by external individual devices, pass through optical fiber
Coupling is connect with the input terminal of beam splitter.It should be noted that the introduced phase fluctuation of optical fiber herein does not influence subsequent device
Output effect.
The laser of injection locking laser array output is typically all single mode, therefore main laser is typically also single-mode laser
Device.
Optionally, the outside of the coherent source component of the application further includes main laser and is connected with main laser output end
Isolator, isolator output end connection beam splitter input terminal；Under identical operating temperature, from laser array
The absolute value of the difference of the free operation wavelength of each laser and the free operation wavelength of main laser is not higher than the first preset value.
Close from the free operation wavelength of each activator appliance and main laser in laser array is to realize injection locking skill
The necessary condition of art after meeting the condition, makes to swash from the roads n in laser array from laser array by injecting locking control
The output laser of light device and input laser frequency having the same and fixed phase deviation.
Optionally, as shown in Fig. 2, further including external individual devices main laser (1) in the front of the input terminal of beam splitter,
And the external individual devices isolator (2) being arranged between main laser and beam splitter；Under identical operating temperature, from laser
The absolute value of the difference of the free operation wavelength of each laser in device array and the free operation wavelength of main laser is not higher than the
One preset value.
In order to enable from laser array output coherence, preferably each road laser, the first preset value of setting are 1nm.
Main laser and distributed feedback semiconductor laser, distributed feed-back can be used from each laser in laser array
Contain the grating of dielectric periodicity variation in the gain region of semiconductor laser.When the grating of distributed feedback semiconductor laser
Gain when being in periodic distribution, i.e. gain coupled mode grating, screen periods have good corresponding pass with laser wavelength
System, helps to improve each laser wavelength consistency, is easy to implement injection locking technique.
Or main laser and from each laser in laser array use distributed Bragg reflection laser, grating
Period also has good correspondence with laser wavelength, helps to improve each laser wavelength consistency.
The embodiment explanation using various lasers is given below.And in following embodiments, the coherent source portion of the application
Part is coherent optical source chip.
InP-base semi-conducting material manufacturing can be used in the coherent optical source chip of the present invention, such as InGaAsP, AlGaInAs, work
For wavelength near 1.3 μm or 1.55 μm, which is the common wavelengths of laser link.
(1) distributed feedback semiconductor laser
The main laser (1) of the present invention swashs with from each laser in laser array (4) using distributed feedback semiconductor
Light device.
It is main when main laser and isolator and when being integrated in same chip from laser array for the ease of making chip
Laser (1), beam splitter (3), from laser array (4), phase-modulator (5) and bundling device (6) epitaxy junction having the same
Structure；When main laser and isolator and when not being integrated in same chip from laser array, beam splitter (3), from laser array
(4), phase-modulator (5) and bundling device (6) epitaxial structure having the same.
Meanwhile the Injection Current of beam splitter (3), phase-modulator (5) and bundling device (6) is not less than each self-induced transparency carrier
The corresponding electric current of concentration reduces transmission consumption to improve efficiency of transmission of the laser in beam splitter, phase-modulator and bundling device
Damage improves the power that bundling device (6) exports laser.
Fig. 3 by main laser and isolator with for laser array is integrated in same chip, provide the present invention is based on
The coherent optical source chip production method of distributed feedback semiconductor laser, includes the following steps：
Step 11：A chip substrate (7) is selected, the extension successively in chip substrate (7)：It is wrapped under N-shaped cache layer (8), N-shaped
Layer (9), unintentional doping lower waveguide layer (10), unintentional doped quantum well layer (11), ducting layer (12), portion in unintentional doping
Divide p-type top covering (13), p-type etch stop layer (14), p-type lower protective layer (15), p-type grating layer (16), p-type up-protective layer
(17), as shown in Figure 3a.
For example, using metal organic chemical deposition (MOCVD, Metal Organic Chemical Vapor
Deposition) the growth such as lower structure successively in highly doped N-shaped InP substrate (7)：
(1), N-shaped InP buffer layers (8), thickness 700nm, doping concentration are 2 × 1018cm-3；
(2), N-shaped under-clad layer (9), thickness 600nm, doping concentration are 1 × 1018cm-3；
(3), unintentional doping InGaAsP lower waveguide layers (10), the gradually changed refractive index of the lower waveguide layer, thickness 200nm,
Wavelength of the fluorescence peak is from the first preset wavelength gradual change to the second preset wavelength, such as from 1.05 μm of gradual changes to 1.2 μm；
(4), InGaAsP strain compensations multiple quantum well layer (11), including 6 pairs of Quantum Well and base, trap width are 6nm, and 1% pressure is answered
Become, 1.74 μm of wavelength of the fluorescence peak, builds width 12nm, 0.2% stretching strain, 1.25 μm of wavelength of the fluorescence peak；
(5), ducting layer (12) on unintentional doping InGaAsP, thickness 400nm, wavelength of the fluorescence peak are default from first
Wavelength gradual change is to the second preset wavelength, such as from 1.05 μm of gradual changes to 1.2 μm；
(6), part of p-type InP top coverings (13), thickness 100nm, doping concentration is from 2 × 1017cm-3It is gradient to 5 ×
1017cm-3；
(7), p-type InGaAsP etch stop layers (14), thickness 70nm, doping concentration 5 × 1017cm-3；
(8), p-type InP lower protective layers (15), thickness 70nm, doping concentration 5 × 1017cm-3；
(9), p-type InGaAsP grating layers (16), thickness 35nm, doping concentration 1 × 1018cm-3；
(10), p-type InP up-protective layers (17), thickness 20nm, doping concentration about 1.2 × 1018cm-3。
Step 12：In the main laser of p-type up-protective layer (17) and p-type grating layer (16) and from laser array region system
Make the optical grating construction with same period, as shown in Figure 3b.
For example, using plasma enhancing chemical vapor deposition (PECVD, Plasma Enhanced Chemical
Vapor Deposition) deposition thickness is the SiNx of 50nm on p-type InP up-protective layers (17), using electron beam exposure, system
Make main laser and the raster graphic from laser array region, optical grating diffraction series is 1 rank, and screen periods are wavelength and 2 times
The quotient of effective refractive index, about 240nm, grating section length consistent with laser lengths is 400 μm, and grating region width is slightly larger than battle array
Column width, at least n+1 times from each filters center spacing of laser array, n are array element number.
Grating pattern is turned using reactive ion etching (RIE, Reactive Ion Etching) using photoresist as mask
It moves on on SiNx, is corroded on p-type InP up-protective layers (17) and p-type InGaAsP grating layers (16) using Br water, HBr acid wet method
Go out grating, then removes SiNx with buffered HF acid wet etching.
Step 13：Secondary epitaxy residue p-type top covering (18) and heavily-doped p-type ohm connect on p-type up-protective layer (17)
Contact layer (19) so far completes the epitaxial structure of chip as shown in Figure 3c.
As shown in Figure 3c, MOCVD depositional remanent p-type top coverings (18) and heavily-doped p-type Europe are used on an epitaxial structure
Nurse contact layer (19)：
(11), remaining p-type top covering (18), thickness are 1.3 μm, and doping concentration is from 1 × 1018cm-3It is gradient to 1.5 ×
1018cm-3；
(12) heavily-doped p-type ohmic contact layer (19) include mainly two parts：P-type InGaAsP (thickness 50nm, doping
Concentration is more than 3 × 1018cm-3, wavelength of the fluorescence peak is gradient to 1.55 μm from 1.3 μm), (thickness 200nm, mixes p-type InGaAs
Miscellaneous concentration is more than 1.5 × 1019cm-3)。
Step 14：Low ridge waveguide structure is etched downwards to p-type etch stop layer (14), and waveguiding structure includes main laser
First wave guide structure and integrally formed beam splitter, the second waveguide knot from laser array, phase-modulator and bundling device
Structure, as shown in Figure 3d.
For example, the SiNx of 300nm is deposited on heavily-doped p-type ohmic contact layer (19) with PECVD, using contact exposure
The waveguiding structure of making devices.Main laser (1), the duct width of each laser is about 3 μm from laser array (3)；Phase
Position modulator width is about 3 μm；Beam splitter MMI width is Weμm, wherein WeIndicate that effective width, MMI inputs, output waveguide are wide
About 2 μm of degree, wherein input waveguide center is located at MMI axis, and output waveguide is equidistantly symmetrically distributed in the other end of MMI, output wave
Guiding center spacing is WeThe length of/n, MMI are 3 π Lπ/ 4n, wherein Lπ=4nrWe 2/3λ0, nrFor the equivalent refractive index of MMI, λ0For
1.55μm；Curved waveguide coupled with laser place's width be 3 μm, with the mmi waveguide place of coupling be 2 μm, between duct width it is gradual
Change.Bundling device and beam splitter dimensional structure having the same, mirror image setting.
In Fig. 3 d, main laser and from each laser in laser array use identical ridge waveguide structure, simultaneously
The center spacing of adjoining laser is wide not less than 5 times of ridges from laser array.
Using identical waveguiding structure can ensure that the feature of main laser and from the work between each laser of laser it is special
Sign is close, and then ensures close from the free operation wavelength of each activator appliance and main laser in laser array.
The center spacing of adjoining laser is wide not less than 5 times of ridges from laser array (4), can avoid from laser array
In between each laser light field transverse coupling, reduce coupling loss when laser transmission, be conducive to improve bundling device (6) and export
The power of laser.
In pattern transfer to SiNx using photoresist as mask with RIE device waveguiding structure, ICP dry etchings is used in combination to go out
Near low ridge waveguide structure to p-type etch stop layer (14), as shown in Figure 3d.
Step 15：Maintain the low ridge waveguide structure of first wave guide structure and the slave laser array in second waveguide structure not
Become, continues etching second waveguide structure downwards and form the high ridge of phase-modulator, beam splitter and bundling device to N-shaped under-clad layer (9)
Waveguiding structure, as shown in Figure 3 e.
For example, using contact exposure, main laser is protected, from the low ridge structure of laser array with photoresist, is used
ICP continues dry etching to N-shaped under-clad layer (9), to form the high ridge of phase-modulator (5), beam splitter (3) and bundling device (4)
Structure, as shown in Figure 3 e.
Residual photoresist is removed using acetone, HF acid removes the SiNx of crestal culmination remnants.
Step 16：In chip surface depositing insulating layer, and leak out main laser, from laser array, phase-modulator, point
The electrode window through ray of beam device and bundling device, as shown in Fig. 3 f and 3g.
For example, after cleaning, use the SiNx of PECVD depositions 200nm as insulating layer in chip surface, as illustrated in figure 3f.
Crestal culmination SiNx (there is photoresist protection in other regions) is leaked out using self-aligned exposure method, with the crestal culmination SiNx of RIE etching removals
Electrode window through ray is leaked out, as shown in figure 3g.
Step 17：P-electrode is made in electrode window through ray, and ensures to insulate between each p-electrode；The second wave of etching removal downwards
P-type ohmic contact layer (19) in guide structure between adjacent p-electrode forms electrode isolation, as shown in Fig. 3 h, 3i and 3j.
For example, making top electrodes figure using contact exposure, magnetron sputtering Ti, Pt, Au, is lifted away from by ultrasound successively
Method forms preliminary p-electrode (21), as illustrated in figure 3h.
The SiNx that 100nm is deposited with PECVD produces the isolation of the projected electrode between array by ultrasonic lift-off method
(22), as shown in figure 3i.
It is contacted again formula exposure and makes extraction electrode figure, magnetron sputtering Au completes final p by the method that ultrasound is lifted away from
Electrode fabrication, as shown in Fig. 3 j.
The p-type ohmic contact layer (19) between each p-electrode is removed with ICP etchings, to realize the electricity of the recess between each device
Pole is isolated.
Include 4 lasers from laser array, in the array, the laser of both sides all directly leads out p in Fig. 3 j
Electrode is to table top, and intermediate laser needs that p-electrode is led to table top across electrode isolation (22), and electrode isolation (22) are set
Set is to form access between the laser electrode in order to avoid causing side and adjoining laser electrode.
In Fig. 3 j, every sub- device in single device (such as main laser) or device array (such as from laser array) is all
Provided with independent p-electrode, peripheral control unit can be convenient for accurately control the working condition of each device, keep bundling device output power maximum
Change.
Only illustrate it should be noted that the slave laser array in Fig. 3 includes 4 lasers, it in practical applications, can
According to the requirement to exporting laser power, the slave laser array of other quantity is set.
Step 18：Chip substrate (7) is thinned, polishing；
Step 19：The public poles n electrode is made at the back side of chip substrate (7)；
Step 20：The output end of cleavage main laser and the output end of bundling device, and isolator is encapsulated in main laser
Reserved location between beam splitter completes chip manufacturing.
So far, the explanation of Fig. 3 chip manufacture methods is completed.
It, only need to be by the making side of Fig. 3 when main laser and isolator from laser array with same chip is not integrated in
Corresponding main laser part is removed in method.
Epitaxial structure in the application Fig. 3 is improved on the basis of conventional epitaxial structure, optimizes and use gradually
The upper and lower unintentional doping ducting layer unsymmetric structure of variable refractivity, makes the light field of laser move down, to reduce light field and p-type
Covering is overlapped, and reduces modal loss, and light field moves down while advantageously ensure that lateral single mode, realizes broader ridge waveguide structure,
Increase light field area, improves laser output power.
(2) distributed feedback semiconductor laser
The main laser (1) of the present invention swashs with from each laser in laser array (4) using distributed Blatt reflective
The production method of light device, chip can refer to the prior art.
Optionally, beam splitter, phase-modulator and bundling device use selective epitaxial, make beam splitter, phase-modulator and
The energy gap of bundling device energy gap each laser more than main laser and/or from laser array, thus phase-modulator,
Beam splitter, bundling device are negligible to the absorption of transmission laser in it, improve the efficiency of transmission of laser, reduce transmission consume.
The foregoing is merely illustrative of the preferred embodiments of the present invention, not to limit the present invention scope, it is all
Within the spirit and principle of technical solution of the present invention, any modification, equivalent substitution, improvement and etc. done should be included in this hair
Within bright protection domain.
Claims (16)
1. a kind of coherent source component, which is characterized in that the component includes successively along the direction of propagation of light：Beam splitter, from swash
Light device array and bundling device；
The seed light source of input is divided into the laser output of the roads n by the beam splitter；The roads n laser input is described from laser battle array
Row, it is described to make the output laser from the roads the n laser in laser array by injecting locking control from laser array
With input laser frequency having the same and fixed phase deviation；The roads the n laser exported from laser array inputs institute
It is synthesized into beam of laser output after stating bundling device；
The component is described between laser array and the beam splitter or described from laser array and the bundling device
Between also set up phase-modulator；The phase-modulator swashs the roads the n Laser Modulation for inputting it at the roads n with same phase
Light output；
It is described to be directly connected to or connect using waveguide, the output end of the beam splitter with the phase-modulator from laser array
Device adjacent thereto is connected using waveguide, and the input terminal device adjacent thereto of the bundling device is connected using waveguide.
2. component according to claim 1, which is characterized in that the component the front of the input terminal of the beam splitter also
Including main laser, and the isolator that is arranged between the main laser and the beam splitter；
Under identical operating temperature, the free operation wavelength from each laser in laser array and the main laser
The absolute value of the difference of the free operation wavelength of device is not higher than the first preset value.
3. component according to claim 1, which is characterized in that the outside of the component further include main laser and with it is described
The connected isolator of main laser output end, the output end of the isolator connect the input terminal of the beam splitter；
Under identical operating temperature, the free operation wavelength from each laser in laser array and the main laser
The absolute value of the difference of the free operation wavelength of device is not higher than the first preset value.
4. according to any components of claim 2-3, which is characterized in that first preset value is 1nm.
5. according to any components of claim 2-3, which is characterized in that the main laser and described from laser array
In each laser be distributed feedback semiconductor laser.
6. component according to claim 5, which is characterized in that the component is chip；
When the main laser and isolator with it is described be integrated in same chip from laser array when, the main laser, point
Beam device, phase-modulator, from laser array and bundling device epitaxial structure having the same；
When the main laser and isolator with it is described be not integrated in same chip from laser array when, the beam splitter, phase
Position modulator, from laser array and bundling device epitaxial structure having the same；
The Injection Current of the beam splitter, phase-modulator and bundling device is not less than the corresponding electricity of each self-induced transparency carrier concentration
Stream.
7. component according to claim 6, which is characterized in that the epitaxial structure includes：Under N-shaped cache layer (8), N-shaped
Covering (9), unintentional doping lower waveguide layer (10), unintentional doped quantum well layer (11), ducting layer (12) in unintentional doping,
Part of p-type top covering (13), p-type etch stop layer (14), p-type lower protective layer (15), p-type grating layer (16), p-type up-protective layer
(17), remaining p-type top covering (18) and heavily-doped p-type ohmic contact layer (19).
8. component according to claim 7, which is characterized in that the unintentional doping lower waveguide layer (10) and the non-event
It anticipates and adulterates the wavelength of the fluorescence peak for going up ducting layer (12) from the first preset wavelength gradual change to the second preset wavelength.
9. component according to claim 7, which is characterized in that described to be from laser array and/or the main laser
Low ridge waveguide structure, the etching depth of the low ridge waveguide structure is from the heavily-doped p-type ohmic contact layer (19) to the p-type
The center spacing of lower protective layer (15), the adjoining laser from laser array is wide not less than 5 times of ridges；
The phase-modulator, beam splitter and bundling device are high ridge waveguide structure, the etching depth of the high ridge waveguide structure from
The heavily-doped p-type ohmic contact layer (19) the extremely unintentional doping lower waveguide layer (10).
10. component according to claim 7, which is characterized in that when the main laser with it is described from laser array collection
At when the same chip, the grating layer has same period described from laser array and main laser region setting
Optical grating construction；When the main laser with it is described be not integrated in same chip from laser array when, the grating layer is in institute
It states from optical grating construction of the laser array region setting with same period；
The diffraction progression of the optical grating construction is 1 rank, and the length of the optical grating construction is identical as the laser lengths of corresponding region,
For the width of the optical grating construction not less than n+1 times of each filters center spacing from laser array, n is described from laser
The number of laser in array.
11. according to any components of claim 2-3, which is characterized in that the main laser and described from laser battle array
Each laser in row is distributed Bragg reflection laser.
12. component according to claim 11, which is characterized in that the beam splitter, phase-modulator and bundling device taboo
Bandwidth is more than the energy gap of the main laser and/or the laser each from laser array.
13. according to the component described in claim 1-3, which is characterized in that the beam splitter and/or the bundling device are dry for multimode
Relate to coupler.
14. according to the component described in claim 1-3, which is characterized in that the waveguide is curved waveguide.
15. according to the component described in claim 1-3, which is characterized in that the phase-modulator is electrical modulation phase-modulator.
16. according to the component described in claim 1-3, which is characterized in that the input terminal of the beam splitter and/or the bundling device
The end face of output end be that spot-size converter is arranged in inclined end face and/or the end face coating anti reflection film and/or the end face.
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| CN201810557860.3A CN108767656A (en) | 2018-06-01 | 2018-06-01 | Coherent source component |
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