WO2024000612A1

WO2024000612A1 - Semiconductor laser

Info

Publication number: WO2024000612A1
Application number: PCT/CN2022/104196
Authority: WO
Inventors: 刘敬伟; 刘建; 张岭梓
Original assignee: 国科光芯(海宁)科技股份有限公司
Priority date: 2022-06-30
Filing date: 2022-07-06
Publication date: 2024-01-04
Also published as: CN117374722A

Abstract

Disclosed in the present invention is a semiconductor laser, comprising: a light source module for outputting a single-mode seed light source; an optical wave beam-splitting waveguide chip for splitting the seed light source into a single-mode array; an optical gain module for amplifying each single-mode light beam in the single-mode array; and an optical wave beam-combining waveguide chip for performing phase modulation on the amplified single-mode light beams and then combining the single-mode light beams to form at least one laser beam to be output, wherein the light transmission loss of each of the two selected chips is less than a first preset value. By implementing the present invention, the light source module and the optical gain module are connected by means of the optical wave beam-splitting waveguide chip in an inter-chip integration mode, such that the structure of an original seed light source is not damaged, and the seed light source does not need to be specially customized and has large selectivity; meanwhile, beam combination processing is performed on the amplified light, and a chip having low light transmission loss is selected, such that high-power laser can be borne, a single mode is maintained, and the occurrence of the phenomenon that the laser performance is reduced and even the laser is burnt out because the temperature is too high is avoided.

Description

a semiconductor laser

Technical field

The present invention relates to the technical field of lasers, and in particular to a semiconductor laser.

Background technique

With the development of society, the demand for information has become larger and larger, and integrated optoelectronic chips have become the focus of people's attention. Integrated optoelectronics technology can integrate multiple different types of optoelectronic chips. It has the advantages of high integration, good performance, and low cost. It has been widely used in communications, sensing, intelligence and other fields. In the fields of optical communications, lidar, laser ranging, etc., people have proven the good performance of optoelectronic integrated devices. For example, OPA lidar can achieve high collimation scanning and ranging in the far field.

However, although integrated optoelectronic chips have powerful functions, there are still many applications that are difficult to develop due to the low power and weak energy of integrated devices. For example, silicon-optical integrated optical phase array (OPA) all-solid-state lidar requires the use of pulsed high-power single-mode lasers. However, the output power of existing semiconductor lasers is relatively limited in the single-mode output light mode. At high power, the temperature of the laser emission area will be too high, resulting in performance degradation or even burnout.

Contents of the invention

In view of this, embodiments of the present invention provide a semiconductor laser to solve the technical problem in the prior art that when the power of a high-power single-mode output laser is increased, the light emission performance of the laser emitting area will be reduced or even burned.

The technical solutions provided by the embodiments of the present invention are as follows:

The first aspect of the embodiment of the present invention is a semiconductor laser, including: a light source module for outputting a single-mode seed light source; a light-wave splitting waveguide chip for splitting the seed light source into a single-mode array. The optical transmission loss of the beam waveguide chip is less than the first preset value; the optical gain module is used to gain each single-mode beam in the single-mode array; the optical wave combining waveguide chip is used to phase the gain single-mode beam After modulation, the beam is combined to form at least one laser beam output, and the optical transmission loss of the light wave combining waveguide chip is less than the first preset value.

Optionally, the first preset value is 2dB/cm.

Optionally, the light beam splitting waveguide chip includes: a light coupling area and a light splitting area. One end of the light coupling area is connected to one end of the light emitted from the light source module, and the other end of the light coupling area is connected to the light source module. One end of the beam splitting area is connected to the incident light, and the other end of the light splitting area is connected to one end of the optical gain module where the incident light is incident. The optical coupling area is used to couple the seed light source output from the light source chip into the light splitting area. In Including one of MMI, Y-Branch, DC or star coupler.

Optionally, the light source module and the optical gain module are packaged on the same substrate, or the light source module and the optical gain module are integrated on the same substrate, or the light source module and the optical gain module are integrated on the same substrate. The gain modules are respectively arranged on different substrates.

Optionally, the light source module and the optical gain module are located on different sides of the optical beam splitting waveguide chip, or the light source module and the optical gain module are located on the same side of the optical beam splitting waveguide chip. When the light source When the module and the optical gain module are located on the same side of the optical beam splitting waveguide chip, the optical beam splitting waveguide chip further includes a curved waveguide structure, and the curved waveguide structure is connected between the optical beam splitting waveguide chip and the optical gain module. between gain modules.

Optionally, the optical gain module has an array structure, and the optical gain module performs one-to-one vertical end-face coupling with the waveguides in the optical beam splitting waveguide chip.

Optionally, the optical gain module is an array structure, and the optical gain module performs one-to-one horizontal oblique end-face coupling with the waveguides in the optical beam splitting waveguide chip.

Optionally, the optical gain module is an MMI planar waveguide structure, and the optical gain module is directly coupled to the waveguide in the optical beam splitting waveguide chip.

Optionally, the optical gain module is a taper waveguide array structure, and the optical gain module is directly coupled to the waveguide in the optical beam splitting waveguide chip.

Optionally, the optical wave combining waveguide chip includes: a phase modulator and an optical wave combining waveguide, one end of the phase modulator is connected to one end of the light emitted from the optical gain module, and the other end of the phase modulator is connected to all The optical wave combining waveguide is one end of the incident light, and the phase modulator includes a thermal modulator or a piezoelectric modulator, which is used to phase modulate the gain single-mode beam; the optical wave combining waveguide includes MMI, Y-Branch , DC or star coupler, used to combine the phase-modulated beams.

The technical solution of the present invention has the following advantages:

The semiconductor laser provided by the embodiment of the present invention utilizes inter-chip integration to connect the light source module and the optical gain module through a passive light splitting waveguide chip, without destroying the original seed light source. The structure of the seed light source does not require special customization and has greater selectivity; at the same time, a passive light wave combining waveguide chip is used to combine the gain light, and a chip with low optical transmission loss is used. While ensuring single-mode waveguide conditions, it can withstand high-power lasers and avoid light extraction performance degradation or even burnout caused by excessive temperature in the laser emission area. Finally, high power, narrow linewidth, single transverse mode high beam quality output is achieved, which improves the beam quality and brightness of the output beam. It also has the advantages of commercialization, high yield and low production cost.

Description of drawings

In order to more clearly explain the specific embodiments of the present invention or the technical solutions in the prior art, the accompanying drawings that need to be used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings in the following description The drawings illustrate some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without exerting any creative effort.

Figure 1 is a structural block diagram of a semiconductor laser in an embodiment of the present invention;

Figure 2 is a structural block diagram of the light source module and gain module of the semiconductor laser in the embodiment of the present invention;

Figure 3 is a structural block diagram of a light source module and a gain module of a semiconductor laser in another embodiment of the present invention;

Figure 4 is a structural block diagram of a light source module and a gain module of a semiconductor laser in another embodiment of the present invention;

Figure 5 is a structural block diagram of a semiconductor laser in another embodiment of the present invention;

Figure 6 is a structural block diagram of a semiconductor laser in another embodiment of the present invention;

Figure 7 is a structural block diagram of a semiconductor laser in another embodiment of the present invention;

Figure 8 is a structural block diagram of a semiconductor laser in another embodiment of the present invention;

Figure 9 is a structural block diagram of a semiconductor laser in another embodiment of the present invention.

Detailed ways

The technical solution of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts fall within the scope of protection of the present invention.

In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description. It does not indicate or imply that the device or element referred to must have a specific orientation or a specific orientation. construction and operation, and therefore should not be construed as limitations of the invention. Furthermore, the terms “first”, “second” and “third” are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

In the description of the present invention, it should be noted that, unless otherwise clearly stated and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense. For example, it can be a fixed connection or a detachable connection. Connection, or integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediary; it can also be an internal connection between two components; it can be a wireless connection or a wired connection connect. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood on a case-by-case basis.

In addition, the technical features involved in different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

Example 1

As mentioned in the background art, current semiconductor lasers have broader application prospects in industry, military, medical and other aspects. Manufacturing semiconductor lasers with high power, high beam quality, and narrow linewidth has always been a goal pursued by people. The traditional monolithic integrated high-beam-quality semiconductor laser structure has made great progress in improving output power and optimizing beam quality.

Currently, in the semiconductor laser structure, in order to achieve high power output, the tapered amplifier of the master oscillator power amplifier (MOPA, Master Oscillator Power-Amplifier) is used to achieve beam amplification. However, MOPA cannot provide feedback beam to the seed light source, which will cause carrier accumulation in the conical amplification area, causing the temperature of the laser emission area to be too high, excitating high-order transverse modes, and reducing the quality of the output beam. Another way is to use a monolithic integrated gain array waveguide based on all III-VI materials. However, this solution cannot achieve single-mode beam combining. When the beam combining power is large, it is easy to cause the laser emission area to be burned, and the quality of the output beam is still not high. .

In view of this, an embodiment of the present invention provides a semiconductor laser, as shown in Figure 1 . The semiconductor laser includes: a light source module 10 for outputting a single-mode seed light source; and a light-wave splitting waveguide chip 20 for dividing the The seed light source is split into a single-mode array, and the optical transmission loss of the light-wave splitting waveguide chip is less than the first preset value; an optical (SOA, Semi-conductor Optical Amplifier) gain module 30 is used to convert each channel in the single-mode array The single-mode beam is gain; the optical beam combining waveguide chip 40 is used to phase-modulate the gain single-mode beam and combine it to form at least one laser output; the optical transmission loss of the optical beam combining waveguide chip is less than the first predetermined beam; Set value. Among them, the single-mode array after splitting includes M beams, and the combined beams are N (0<N≦M) outputs.

Among them, the light source module 10 and the optical gain module 30 are both made of active materials, such as III-V group materials. At this time, although the optical gain module 30 is an active material, the beam combining waveguide connected after the optical gain module 30 The chip is a passive optical wave combining waveguide chip 40. Since the optical transmission loss of the selected optical wave splitting waveguide chip and the optical wave combining waveguide chip is less than the first preset value, the optical power that can be tolerated is relatively large, thus avoiding the use of The burning phenomenon of the laser emission area of the combined beam of all III-VI waveguide materials.

Specifically, the first preset value is 2dB/cm, that is, the optical transmission losses of the light-wave splitting waveguide chip and the light-wave combining waveguide chip are both lower than 2dB/cm. Accordingly, in practical applications, the light-wave splitting waveguide chip and the light-wave combining waveguide chip The optical beam combining waveguide chip can all be made of SiN, SiON, or SiO ₂ materials. In addition, other materials that meet the conditions can also be selected according to actual needs. This is not limited in the embodiment of the present invention. In a specific implementation, you can choose a light-wave splitting waveguide chip and a light-wave combining waveguide chip with a light transmission loss of 0.5dB/cm, 1dB/cm, etc. lower than 2dB/cm. When the light-wave splitting waveguide chip and the light-wave combining waveguide chip When the optical transmission loss of the waveguide chip is low, it is easier to avoid the degradation of light extraction performance or even burnout caused by excessive temperature in the laser emission area.

The semiconductor laser provided by the embodiment of the present invention uses inter-chip integration to connect the light source module 10 and the optical gain module 30 through the passive light beam splitting waveguide chip 20, without destroying the structure of the original seed light source, so that the seed light source No special customization is required, and it has greater selectivity; at the same time, a passive optical wave combining waveguide chip 40 is used to combine the gain light, and the chip with lower optical transmission loss is selected to ensure that it is single mode. While maintaining waveguide conditions, it can withstand high-power lasers and avoid degradation in light extraction performance or even burnout caused by excessive temperature in the laser emission area. Finally, high power, narrow linewidth, single transverse mode high beam quality output is achieved, which improves the beam quality and brightness of the output beam. It also has the advantages of commercialization, high yield and low production cost.

In one embodiment, the light beam splitting waveguide chip 20 includes: a light coupling area and a light splitting area. One end of the light coupling area is connected to one end of the light source module 10 emitting light, and the other end of the light coupling area One end of the light splitting area is connected to the incident light, and the other end of the light splitting area is connected to one end of the optical gain module 30 where the incident light is. The optical coupling area includes a forward cone structure, an inverted cone structure or a multilayer waveguide. One of the coupling structures, used to couple the seed light source output from the light source chip into the light splitting area; the light splitting area includes MMI (Multi Mode Interference), Y-Branch (Y branch) ), DC (Directional Coupler) or star coupler, used to split the seed light source into a single-mode array. Wherein, the single-mode array is a standard single-mode array. The optical coupling area is designed according to the characteristics of the coupled light to achieve the best coupling efficiency.

In one embodiment, since both the light source module 10 and the optical gain module 30 can be made of active materials, the light source module 10 and the optical gain module 30 can be packaged on the same substrate, or can be integrated on-chip on the same substrate, that is, The light source module 10 and the optical gain module 30 are provided on the same chip. In specific settings, as shown in Figure 2, the optical gain modules 30 can be set on both sides of the substrate, and the light source module 10 can be set in the middle of the substrate. Ultimately, the same chip can realize both the beam emission function and the beam gain. Function.

Wherein, when the light source module 10 and the gain module are arranged on the same substrate, the light source module and the optical gain module are located on the same side of the optical beam splitting waveguide chip. At this time, in order to realize the input of the split single-mode array to In the optical gain module 30, a curved waveguide structure is provided in the optical beam splitting waveguide chip 20. Therefore, the light beam output by the light source module 10 is first coupled into the optical beam splitting waveguide chip 20, and then transmitted to the optical gain module 30 through the curved waveguide structure for beam gain. The curved waveguide structure may be a SiN curved waveguide structure or a curved waveguide structure of other materials, which is not limited in the embodiments of the present invention.

In one embodiment, the light source module 10 and the optical gain module 30 can also be disposed on different substrates, that is, the light source module 10 and the optical gain module 30 constitute two different chips. At this time, the light source module 10 can use a finished, commercial, or customized semiconductor single-mode output laser. When the light source module 10 and the optical gain module 30 are disposed on different substrates, the light source module 10 and the optical gain module 30 may be located on different sides of the optical beam splitting waveguide chip 20, or may be located on the optical beam splitting waveguide chip 20. 20 on the same side.

When the light source module 10 and the optical gain module 30 are located on the same side of the optical beam splitting waveguide chip 20, the light source module 10 and the optical gain module 30 can also be arranged in such a manner that the light source module 10 is arranged in the middle and the optical gain modules 30 are arranged on both sides. , at this time, as shown in Figure 3, two optical gain modules 30 can be used to be arranged on both sides of the light source module 10. As shown in Figure 4, one optical gain module 30 can also be used, and the middle part of the optical gain module 30 can be The light source module 10 is installed by hollowing it out. The embodiment of the present invention does not limit the specific positions of the light source module 10 and the optical gain module 30 .

When the light source module 10 and the optical gain module 30 are located on different sides of the optical beam splitting waveguide chip 20, the semiconductor laser can be sequentially structured according to the structure of the light source module 10, the optical beam splitting waveguide chip 20, the optical gain module 30 and the optical beam combining waveguide chip 40. The arrangement means that the light source module 10, the optical wave splitting waveguide chip 20, the optical gain module 30 and the optical combining waveguide chip 40 are arranged in sequence from left to right.

In one embodiment, the optical gain module 30 has an array structure, and the optical gain module 30 performs one-to-one vertical end-face coupling with the waveguides in the optical beam splitting waveguide chip 20 . Alternatively, the optical gain module 30 has an array structure, and the optical gain module 30 performs one-to-one horizontal oblique end-face coupling with the waveguides in the optical beam splitting waveguide chip 20 . Among them, the reflection of the light beam can be prevented through the horizontal direction oblique end surface coupling. In addition, in these two coupling modes, the optical gain module 30 may adopt a taper conversion structure, or may not provide a taper conversion structure, which is not limited in the embodiment of the present invention.

In one embodiment, the optical gain module 30 is an MMI planar waveguide structure, and the optical gain module 30 is directly coupled to the waveguide in the optical beam splitting waveguide chip 20 . Alternatively, the optical gain module 30 has a taper waveguide array structure, and the optical gain module 30 is directly coupled to the waveguide in the optical beam splitting waveguide chip 20 .

In one embodiment, the optical wave combining waveguide chip 40 includes: a phase modulator and an optical wave combining waveguide. One end of the phase modulator is connected to one end of the light emitted from the optical gain module 30. The phase modulator has The other end is connected to one end of the optical wave combining waveguide that injects light. The phase modulator includes a thermal modulator or a piezoelectric modulator for phase modulating the gain single-mode beam; the optical wave combining waveguide includes an MMI. , Y-Branch, DC or star coupler, used to combine the phase modulated beams.

Example 2

An embodiment of the present invention provides a semiconductor laser. As shown in FIG. 5 , the semiconductor laser includes a light source module 10, an optical beam splitting waveguide chip 20, an optical gain module 30, and an optical beam combining waveguide chip 40. Among them, the light source module 10 and the optical gain module 30 are packaged on the same substrate, or can be integrated on-chip on the same substrate. The light source module 10 emits laser light to the left and is coupled into the optical coupling area of the light beam splitting waveguide chip 20, and then passes through the light beam splitting. area (the optical beam splitting area includes but is not limited to MMI, Y-Branch and DC structures) is divided into the required number of paths, and then is coupled again into the optical gain module 30 through the bending structure. The optical gain module 30 performs on each single-mode beam. The optical power is amplified, and finally the optical beam combining waveguide chip 40 performs reasonable phase modulation (such as thermal adjustment or voltage modulation) on each path of light, and then is converted into the required number of channels through the optical beam combining waveguide for single-mode light output.

Example 3

An embodiment of the present invention provides a semiconductor laser. As shown in FIG. 6 , the semiconductor laser includes a light source module 10 , an optical beam splitting waveguide chip 20 , an optical gain module 30 and an optical beam combining waveguide chip 40 arranged in sequence from left to right. The seed light source emitted by the light source module 10 is directly coupled into the optical beam splitting waveguide chip 20. The optical gain module 30 and the waveguide of the optical beam splitting waveguide chip 20 perform one-to-one vertical end-face coupling. There is no taper conversion structure in the optical gain module 30. The single-mode array after splitting by the light wave splitting waveguide chip 20 is input to the optical gain module 30 for optical power amplification, and finally reasonable phase modulation is performed on each path of light through the light wave combining waveguide chip 40 (the phase modulator can be a thermally adjusted , it can also be piezoelectric modulation), which is converted into the required number of channels through the light wave combining waveguide for single-mode light output.

Example 4

An embodiment of the present invention provides a semiconductor laser. As shown in FIG. 7 , the semiconductor laser includes a light source module 10 , an optical beam splitting waveguide chip 20 , an optical gain module 30 and an optical beam combining waveguide chip 40 arranged in sequence from left to right. The seed light source emitted by the light source module 10 is directly coupled into the optical beam splitting waveguide chip 20. The optical gain module 30 and the waveguide of the optical beam splitting waveguide chip 20 perform one-to-one horizontal oblique end-face coupling. There is no taper conversion structure in the optical gain module 30. , the single-mode array after being split by the light wave splitting waveguide chip 20 is input to the optical gain module 30 for optical power amplification, and finally reasonable phase modulation is performed on each path of light through the light wave combining waveguide chip 40 (the phase modulator can be Thermal modulation, or piezoelectric modulation) is used to convert the light waves into the required number of channels through a beam combining waveguide for single-mode light output.

Example 5

An embodiment of the present invention provides a semiconductor laser. As shown in FIG. 8 , the semiconductor laser includes a light source module 10 , an optical splitting waveguide chip 20 , an optical gain module 30 and an optical combining waveguide chip 40 arranged in sequence from left to right. The seed light source emitted by the light source module 10 is directly coupled into the optical beam splitting waveguide chip 20. The optical gain module 30 uses an MMI planar waveguide and the waveguide of the optical beam splitting waveguide chip 20 for direct coupling. There is no taper conversion structure in the optical gain module 30. After the light wave The single-mode array after splitting by the beam splitting waveguide chip 20 is input to the optical gain module 30 for optical power amplification, and finally reasonable phase modulation is performed on each path of light through the optical beam combining waveguide chip 40 (the phase modulator can be thermally adjusted, It can also be piezoelectric modulation), which is converted into the required number of channels through the light wave combining waveguide for single-mode light output.

Example 6

An embodiment of the present invention provides a semiconductor laser. As shown in FIG. 9 , the semiconductor laser includes a light source module 10, an optical beam splitting waveguide chip 20, an optical gain module 30 and an optical beam combining waveguide chip 40 arranged in sequence from left to right. The seed light source emitted by the light source module 10 is directly coupled into the optical beam splitting waveguide chip 20. The optical gain module 30 uses a taper waveguide array to directly couple with the waveguide of the optical beam splitting waveguide chip 20. After being split by the optical beam splitting waveguide chip 20, The single-mode array is input to the optical gain module 30 for optical power amplification. Finally, the optical beam combining waveguide chip 40 performs reasonable phase modulation on each light path (the phase modulator can be thermal modulation or piezoelectric modulation). After The light wave combining waveguide converts it into the required number of channels for light output.

Among them, it should be noted that the optical transmission losses of the light-wave splitting waveguide chip and the light-wave combining waveguide chip in the above-mentioned Embodiment 2 to Embodiment 6 are less than the first preset value.

Although the exemplary embodiments and their advantages have been described in detail, those skilled in the art can make various changes, substitutions and modifications to these embodiments without departing from the spirit of the invention and the scope of protection defined by the appended claims. Such modifications and variations are within the scope defined by the appended claims. For other examples, one of ordinary skill in the art will readily appreciate that the order of process steps may be varied while remaining within the scope of the present invention.

In addition, the application scope of the present invention is not limited to the process, mechanism, manufacture, material composition, means, methods and steps of the specific embodiments described in the specification. From the disclosure of the present invention, those of ordinary skill in the art will easily understand that there are processes, mechanisms, manufacturing, material compositions, means, methods or steps that currently exist or will be developed in the future, which perform the same functions as the present invention. Corresponding embodiments are described that function substantially the same or achieve substantially the same results, and may be applied in accordance with the present invention. Therefore, the appended claims of the present invention are intended to include these processes, mechanisms, manufactures, material compositions, means, methods or steps within the scope of protection thereof.

Claims

A semiconductor laser, characterized by including:

Light source module, used to output single-mode seed light source;

A light-wave splitting waveguide chip, used to split the seed light source into a single-mode array, and the optical transmission loss of the light-wave splitting waveguide chip is less than a first preset value;

Optical gain module, used to gain each single-mode beam in the single-mode array;

The optical wave combining waveguide chip is used to phase-modulate the gain single-mode beam and combine it to form at least one single-mode high-power laser output. The optical transmission loss of the optical wave combining waveguide chip is less than the first preset value.
The semiconductor laser according to claim 1, wherein the first preset value is 2dB/cm.
The semiconductor laser according to claim 1, wherein the light beam splitting waveguide chip includes: an optical coupling area and an optical beam splitting area, one end of the optical coupling area is connected to one end of the light source module emitting light, and the The other end of the optical coupling area is connected to one end of the incident light in the light splitting area, and the other end of the optical beam splitting area is connected to one end of the incident light in the optical gain module,

The optical coupling area is used to couple the seed light source output from the light source chip into the light splitting area, and the optical coupling area includes one of a forward cone structure, an inverted cone structure or a multi-layer waveguide coupling structure;

The light splitting area is used to split the seed light source into a single-mode array, and the light splitting area includes one of MMI, Y-Branch, DC or star coupler.
The semiconductor laser according to claim 1, wherein the light source module and the optical gain module are packaged on the same substrate, or the light source module and the optical gain module are integrated on-chip on the same substrate, Alternatively, the light source module and the optical gain module are respectively provided on different substrates.
The semiconductor laser according to claim 1, wherein the light source module and the optical gain module are located on different sides of the optical beam splitting waveguide chip, or the light source module and the optical gain module are located on different sides of the optical beam splitting waveguide chip. On the same side of the light-wave splitting waveguide chip, when the light source module and the optical gain module are located on the same side of the light-wave splitting waveguide chip, the light-wave splitting waveguide chip also includes a curved waveguide structure, the A curved waveguide structure is connected between the light wave splitting waveguide chip and the optical gain module.
The semiconductor laser according to claim 1, wherein the optical gain module has an array structure, and the optical gain module performs one-to-one vertical end-face coupling with the waveguides in the optical beam splitting waveguide chip.
The semiconductor laser according to claim 1, wherein the optical gain module has an array structure, and the optical gain module performs one-to-one horizontal oblique end-face coupling with the waveguides in the optical beam splitting waveguide chip.
The semiconductor laser according to claim 1, wherein the optical gain module is an MMI planar waveguide structure, and the optical gain module is directly coupled to the waveguide in the optical beam splitting waveguide chip.
The semiconductor laser according to claim 1, wherein the optical gain module is a taper waveguide array structure, and the optical gain module is directly coupled to the waveguide in the optical beam splitting waveguide chip.
The semiconductor laser according to claim 1, wherein the optical wave combining waveguide chip includes: a phase modulator and an optical wave combining waveguide, one end of the phase modulator is connected to one end of the light emitted from the optical gain module, The other end of the phase modulator is connected to one end of the light combining waveguide and the incident light,

The phase modulator includes a thermal modulator or a piezoelectric modulator, which is used to phase modulate the gain single-mode beam;

The optical wave combining waveguide includes an MMI, Y-Branch, DC or star coupler, and is used to combine the phase-modulated light beams.