WO2024000612A1 - Laser à semi-conducteur - Google Patents

Laser à semi-conducteur Download PDF

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Publication number
WO2024000612A1
WO2024000612A1 PCT/CN2022/104196 CN2022104196W WO2024000612A1 WO 2024000612 A1 WO2024000612 A1 WO 2024000612A1 CN 2022104196 W CN2022104196 W CN 2022104196W WO 2024000612 A1 WO2024000612 A1 WO 2024000612A1
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WIPO (PCT)
Prior art keywords
optical
light
light source
waveguide
gain module
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Application number
PCT/CN2022/104196
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English (en)
Chinese (zh)
Inventor
刘敬伟
刘建
张岭梓
Original Assignee
国科光芯(海宁)科技股份有限公司
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Publication of WO2024000612A1 publication Critical patent/WO2024000612A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0085—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for modulating the output, i.e. the laser beam is modulated outside the laser cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers

Definitions

  • the present invention relates to the technical field of lasers, and in particular to a semiconductor laser.
  • OPA lidar can achieve high collimation scanning and ranging in the far field.
  • silicon-optical integrated optical phase array (OPA) all-solid-state lidar requires the use of pulsed high-power single-mode lasers.
  • OPA integrated optical phase array
  • the output power of existing semiconductor lasers is relatively limited in the single-mode output light mode. At high power, the temperature of the laser emission area will be too high, resulting in performance degradation or even burnout.
  • embodiments of the present invention provide a semiconductor laser to solve the technical problem in the prior art that when the power of a high-power single-mode output laser is increased, the light emission performance of the laser emitting area will be reduced or even burned.
  • the first aspect of the embodiment of the present invention is a semiconductor laser, including: a light source module for outputting a single-mode seed light source; a light-wave splitting waveguide chip for splitting the seed light source into a single-mode array.
  • the optical transmission loss of the beam waveguide chip is less than the first preset value; the optical gain module is used to gain each single-mode beam in the single-mode array; the optical wave combining waveguide chip is used to phase the gain single-mode beam After modulation, the beam is combined to form at least one laser beam output, and the optical transmission loss of the light wave combining waveguide chip is less than the first preset value.
  • the first preset value is 2dB/cm.
  • the light beam splitting waveguide chip includes: a light coupling area and a light splitting area.
  • One end of the light coupling area is connected to one end of the light emitted from the light source module, and the other end of the light coupling area is connected to the light source module.
  • One end of the beam splitting area is connected to the incident light, and the other end of the light splitting area is connected to one end of the optical gain module where the incident light is incident.
  • the optical coupling area is used to couple the seed light source output from the light source chip into the light splitting area. In Including one of MMI, Y-Branch, DC or star coupler.
  • the light source module and the optical gain module are packaged on the same substrate, or the light source module and the optical gain module are integrated on the same substrate, or the light source module and the optical gain module are integrated on the same substrate.
  • the gain modules are respectively arranged on different substrates.
  • the light source module and the optical gain module are located on different sides of the optical beam splitting waveguide chip, or the light source module and the optical gain module are located on the same side of the optical beam splitting waveguide chip.
  • the optical beam splitting waveguide chip further includes a curved waveguide structure, and the curved waveguide structure is connected between the optical beam splitting waveguide chip and the optical gain module. between gain modules.
  • the optical gain module has an array structure, and the optical gain module performs one-to-one vertical end-face coupling with the waveguides in the optical beam splitting waveguide chip.
  • the optical gain module is an array structure, and the optical gain module performs one-to-one horizontal oblique end-face coupling with the waveguides in the optical beam splitting waveguide chip.
  • the optical gain module is an MMI planar waveguide structure, and the optical gain module is directly coupled to the waveguide in the optical beam splitting waveguide chip.
  • the optical gain module is a taper waveguide array structure, and the optical gain module is directly coupled to the waveguide in the optical beam splitting waveguide chip.
  • the optical wave combining waveguide chip includes: a phase modulator and an optical wave combining waveguide, one end of the phase modulator is connected to one end of the light emitted from the optical gain module, and the other end of the phase modulator is connected to all
  • the optical wave combining waveguide is one end of the incident light
  • the phase modulator includes a thermal modulator or a piezoelectric modulator, which is used to phase modulate the gain single-mode beam
  • the optical wave combining waveguide includes MMI, Y-Branch , DC or star coupler, used to combine the phase-modulated beams.
  • the semiconductor laser provided by the embodiment of the present invention utilizes inter-chip integration to connect the light source module and the optical gain module through a passive light splitting waveguide chip, without destroying the original seed light source.
  • the structure of the seed light source does not require special customization and has greater selectivity; at the same time, a passive light wave combining waveguide chip is used to combine the gain light, and a chip with low optical transmission loss is used. While ensuring single-mode waveguide conditions, it can withstand high-power lasers and avoid light extraction performance degradation or even burnout caused by excessive temperature in the laser emission area. Finally, high power, narrow linewidth, single transverse mode high beam quality output is achieved, which improves the beam quality and brightness of the output beam. It also has the advantages of commercialization, high yield and low production cost.
  • Figure 1 is a structural block diagram of a semiconductor laser in an embodiment of the present invention
  • Figure 2 is a structural block diagram of the light source module and gain module of the semiconductor laser in the embodiment of the present invention
  • Figure 3 is a structural block diagram of a light source module and a gain module of a semiconductor laser in another embodiment of the present invention
  • Figure 4 is a structural block diagram of a light source module and a gain module of a semiconductor laser in another embodiment of the present invention.
  • Figure 5 is a structural block diagram of a semiconductor laser in another embodiment of the present invention.
  • Figure 6 is a structural block diagram of a semiconductor laser in another embodiment of the present invention.
  • Figure 7 is a structural block diagram of a semiconductor laser in another embodiment of the present invention.
  • Figure 8 is a structural block diagram of a semiconductor laser in another embodiment of the present invention.
  • Figure 9 is a structural block diagram of a semiconductor laser in another embodiment of the present invention.
  • connection should be understood in a broad sense.
  • connection or integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediary; it can also be an internal connection between two components; it can be a wireless connection or a wired connection connect.
  • connection or integral connection
  • connection or integral connection
  • connection can be a mechanical connection or an electrical connection
  • it can be a direct connection or an indirect connection through an intermediary
  • it can also be an internal connection between two components
  • it can be a wireless connection or a wired connection connect.
  • MOPA Master Oscillator Power-Amplifier
  • MOPA cannot provide feedback beam to the seed light source, which will cause carrier accumulation in the conical amplification area, causing the temperature of the laser emission area to be too high, excitating high-order transverse modes, and reducing the quality of the output beam.
  • Another way is to use a monolithic integrated gain array waveguide based on all III-VI materials.
  • this solution cannot achieve single-mode beam combining. When the beam combining power is large, it is easy to cause the laser emission area to be burned, and the quality of the output beam is still not high. .
  • an embodiment of the present invention provides a semiconductor laser, as shown in Figure 1 .
  • the semiconductor laser includes: a light source module 10 for outputting a single-mode seed light source; and a light-wave splitting waveguide chip 20 for dividing the The seed light source is split into a single-mode array, and the optical transmission loss of the light-wave splitting waveguide chip is less than the first preset value; an optical (SOA, Semi-conductor Optical Amplifier) gain module 30 is used to convert each channel in the single-mode array
  • the single-mode beam is gain;
  • the optical beam combining waveguide chip 40 is used to phase-modulate the gain single-mode beam and combine it to form at least one laser output; the optical transmission loss of the optical beam combining waveguide chip is less than the first predetermined beam; Set value.
  • the single-mode array after splitting includes M beams, and the combined beams are N (0 ⁇ N ⁇ M) outputs.
  • the light source module 10 and the optical gain module 30 are both made of active materials, such as III-V group materials.
  • the optical gain module 30 is an active material
  • the chip is a passive optical wave combining waveguide chip 40. Since the optical transmission loss of the selected optical wave splitting waveguide chip and the optical wave combining waveguide chip is less than the first preset value, the optical power that can be tolerated is relatively large, thus avoiding the use of The burning phenomenon of the laser emission area of the combined beam of all III-VI waveguide materials.
  • the first preset value is 2dB/cm, that is, the optical transmission losses of the light-wave splitting waveguide chip and the light-wave combining waveguide chip are both lower than 2dB/cm.
  • the light-wave splitting waveguide chip and the light-wave combining waveguide chip can all be made of SiN, SiON, or SiO 2 materials.
  • other materials that meet the conditions can also be selected according to actual needs. This is not limited in the embodiment of the present invention. In a specific implementation, you can choose a light-wave splitting waveguide chip and a light-wave combining waveguide chip with a light transmission loss of 0.5dB/cm, 1dB/cm, etc.
  • the semiconductor laser provided by the embodiment of the present invention uses inter-chip integration to connect the light source module 10 and the optical gain module 30 through the passive light beam splitting waveguide chip 20, without destroying the structure of the original seed light source, so that the seed light source No special customization is required, and it has greater selectivity; at the same time, a passive optical wave combining waveguide chip 40 is used to combine the gain light, and the chip with lower optical transmission loss is selected to ensure that it is single mode. While maintaining waveguide conditions, it can withstand high-power lasers and avoid degradation in light extraction performance or even burnout caused by excessive temperature in the laser emission area. Finally, high power, narrow linewidth, single transverse mode high beam quality output is achieved, which improves the beam quality and brightness of the output beam. It also has the advantages of commercialization, high yield and low production cost.
  • the light beam splitting waveguide chip 20 includes: a light coupling area and a light splitting area. One end of the light coupling area is connected to one end of the light source module 10 emitting light, and the other end of the light coupling area One end of the light splitting area is connected to the incident light, and the other end of the light splitting area is connected to one end of the optical gain module 30 where the incident light is.
  • the optical coupling area includes a forward cone structure, an inverted cone structure or a multilayer waveguide.
  • the light splitting area includes MMI (Multi Mode Interference), Y-Branch (Y branch) ), DC (Directional Coupler) or star coupler, used to split the seed light source into a single-mode array.
  • MMI Multi Mode Interference
  • Y-Branch Y branch
  • DC Directional Coupler
  • star coupler used to split the seed light source into a single-mode array.
  • the single-mode array is a standard single-mode array.
  • the optical coupling area is designed according to the characteristics of the coupled light to achieve the best coupling efficiency.
  • both the light source module 10 and the optical gain module 30 can be made of active materials
  • the light source module 10 and the optical gain module 30 can be packaged on the same substrate, or can be integrated on-chip on the same substrate, that is, The light source module 10 and the optical gain module 30 are provided on the same chip.
  • the optical gain modules 30 can be set on both sides of the substrate, and the light source module 10 can be set in the middle of the substrate.
  • the same chip can realize both the beam emission function and the beam gain. Function.
  • the light source module 10 and the gain module are arranged on the same substrate, the light source module and the optical gain module are located on the same side of the optical beam splitting waveguide chip.
  • a curved waveguide structure is provided in the optical beam splitting waveguide chip 20. Therefore, the light beam output by the light source module 10 is first coupled into the optical beam splitting waveguide chip 20, and then transmitted to the optical gain module 30 through the curved waveguide structure for beam gain.
  • the curved waveguide structure may be a SiN curved waveguide structure or a curved waveguide structure of other materials, which is not limited in the embodiments of the present invention.
  • the light source module 10 and the optical gain module 30 can also be disposed on different substrates, that is, the light source module 10 and the optical gain module 30 constitute two different chips. At this time, the light source module 10 can use a finished, commercial, or customized semiconductor single-mode output laser.
  • the light source module 10 and the optical gain module 30 may be located on different sides of the optical beam splitting waveguide chip 20, or may be located on the optical beam splitting waveguide chip 20. 20 on the same side.
  • the light source module 10 and the optical gain module 30 can also be arranged in such a manner that the light source module 10 is arranged in the middle and the optical gain modules 30 are arranged on both sides.
  • two optical gain modules 30 can be used to be arranged on both sides of the light source module 10.
  • one optical gain module 30 can also be used, and the middle part of the optical gain module 30 can be
  • the light source module 10 is installed by hollowing it out. The embodiment of the present invention does not limit the specific positions of the light source module 10 and the optical gain module 30 .
  • the semiconductor laser can be sequentially structured according to the structure of the light source module 10, the optical beam splitting waveguide chip 20, the optical gain module 30 and the optical beam combining waveguide chip 40.
  • the arrangement means that the light source module 10, the optical wave splitting waveguide chip 20, the optical gain module 30 and the optical combining waveguide chip 40 are arranged in sequence from left to right.
  • the optical gain module 30 has an array structure, and the optical gain module 30 performs one-to-one vertical end-face coupling with the waveguides in the optical beam splitting waveguide chip 20 .
  • the optical gain module 30 has an array structure, and the optical gain module 30 performs one-to-one horizontal oblique end-face coupling with the waveguides in the optical beam splitting waveguide chip 20 .
  • the reflection of the light beam can be prevented through the horizontal direction oblique end surface coupling.
  • the optical gain module 30 may adopt a taper conversion structure, or may not provide a taper conversion structure, which is not limited in the embodiment of the present invention.
  • the optical gain module 30 is an MMI planar waveguide structure, and the optical gain module 30 is directly coupled to the waveguide in the optical beam splitting waveguide chip 20 .
  • the optical gain module 30 has a taper waveguide array structure, and the optical gain module 30 is directly coupled to the waveguide in the optical beam splitting waveguide chip 20 .
  • the optical wave combining waveguide chip 40 includes: a phase modulator and an optical wave combining waveguide.
  • One end of the phase modulator is connected to one end of the light emitted from the optical gain module 30.
  • the phase modulator has The other end is connected to one end of the optical wave combining waveguide that injects light.
  • the phase modulator includes a thermal modulator or a piezoelectric modulator for phase modulating the gain single-mode beam;
  • the optical wave combining waveguide includes an MMI. , Y-Branch, DC or star coupler, used to combine the phase modulated beams.
  • the semiconductor laser includes a light source module 10, an optical beam splitting waveguide chip 20, an optical gain module 30, and an optical beam combining waveguide chip 40.
  • the light source module 10 and the optical gain module 30 are packaged on the same substrate, or can be integrated on-chip on the same substrate.
  • the light source module 10 emits laser light to the left and is coupled into the optical coupling area of the light beam splitting waveguide chip 20, and then passes through the light beam splitting.
  • area (the optical beam splitting area includes but is not limited to MMI, Y-Branch and DC structures) is divided into the required number of paths, and then is coupled again into the optical gain module 30 through the bending structure.
  • the optical gain module 30 performs on each single-mode beam.
  • the optical power is amplified, and finally the optical beam combining waveguide chip 40 performs reasonable phase modulation (such as thermal adjustment or voltage modulation) on each path of light, and then is converted into the required number of channels through the optical beam combining waveguide for single-mode light output.
  • reasonable phase modulation such as thermal adjustment or voltage modulation
  • the semiconductor laser includes a light source module 10 , an optical beam splitting waveguide chip 20 , an optical gain module 30 and an optical beam combining waveguide chip 40 arranged in sequence from left to right.
  • the seed light source emitted by the light source module 10 is directly coupled into the optical beam splitting waveguide chip 20.
  • the optical gain module 30 and the waveguide of the optical beam splitting waveguide chip 20 perform one-to-one vertical end-face coupling. There is no taper conversion structure in the optical gain module 30.
  • the single-mode array after splitting by the light wave splitting waveguide chip 20 is input to the optical gain module 30 for optical power amplification, and finally reasonable phase modulation is performed on each path of light through the light wave combining waveguide chip 40 (the phase modulator can be a thermally adjusted , it can also be piezoelectric modulation), which is converted into the required number of channels through the light wave combining waveguide for single-mode light output.
  • the phase modulator can be a thermally adjusted , it can also be piezoelectric modulation
  • the semiconductor laser includes a light source module 10 , an optical beam splitting waveguide chip 20 , an optical gain module 30 and an optical beam combining waveguide chip 40 arranged in sequence from left to right.
  • the seed light source emitted by the light source module 10 is directly coupled into the optical beam splitting waveguide chip 20.
  • the optical gain module 30 and the waveguide of the optical beam splitting waveguide chip 20 perform one-to-one horizontal oblique end-face coupling. There is no taper conversion structure in the optical gain module 30.
  • the single-mode array after being split by the light wave splitting waveguide chip 20 is input to the optical gain module 30 for optical power amplification, and finally reasonable phase modulation is performed on each path of light through the light wave combining waveguide chip 40 (the phase modulator can be Thermal modulation, or piezoelectric modulation) is used to convert the light waves into the required number of channels through a beam combining waveguide for single-mode light output.
  • the phase modulator can be Thermal modulation, or piezoelectric modulation
  • the semiconductor laser includes a light source module 10 , an optical splitting waveguide chip 20 , an optical gain module 30 and an optical combining waveguide chip 40 arranged in sequence from left to right.
  • the seed light source emitted by the light source module 10 is directly coupled into the optical beam splitting waveguide chip 20.
  • the optical gain module 30 uses an MMI planar waveguide and the waveguide of the optical beam splitting waveguide chip 20 for direct coupling. There is no taper conversion structure in the optical gain module 30.
  • the single-mode array after splitting by the beam splitting waveguide chip 20 is input to the optical gain module 30 for optical power amplification, and finally reasonable phase modulation is performed on each path of light through the optical beam combining waveguide chip 40 (the phase modulator can be thermally adjusted, It can also be piezoelectric modulation), which is converted into the required number of channels through the light wave combining waveguide for single-mode light output.
  • the phase modulator can be thermally adjusted, It can also be piezoelectric modulation
  • the semiconductor laser includes a light source module 10, an optical beam splitting waveguide chip 20, an optical gain module 30 and an optical beam combining waveguide chip 40 arranged in sequence from left to right.
  • the seed light source emitted by the light source module 10 is directly coupled into the optical beam splitting waveguide chip 20.
  • the optical gain module 30 uses a taper waveguide array to directly couple with the waveguide of the optical beam splitting waveguide chip 20. After being split by the optical beam splitting waveguide chip 20, The single-mode array is input to the optical gain module 30 for optical power amplification.
  • the optical beam combining waveguide chip 40 performs reasonable phase modulation on each light path (the phase modulator can be thermal modulation or piezoelectric modulation). After The light wave combining waveguide converts it into the required number of channels for light output.
  • the optical transmission losses of the light-wave splitting waveguide chip and the light-wave combining waveguide chip in the above-mentioned Embodiment 2 to Embodiment 6 are less than the first preset value.
  • the application scope of the present invention is not limited to the process, mechanism, manufacture, material composition, means, methods and steps of the specific embodiments described in the specification. From the disclosure of the present invention, those of ordinary skill in the art will easily understand that there are processes, mechanisms, manufacturing, material compositions, means, methods or steps that currently exist or will be developed in the future, which perform the same functions as the present invention. Corresponding embodiments are described that function substantially the same or achieve substantially the same results, and may be applied in accordance with the present invention. Therefore, the appended claims of the present invention are intended to include these processes, mechanisms, manufactures, material compositions, means, methods or steps within the scope of protection thereof.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

La présente invention concerne un laser à semi-conducteur, comprenant: un module de source de lumière pour l'émission en sortie d'une source de lumière d'ensemencement monomode; une puce de guide d'ondes de division de faisceau d'onde optique pour diviser la source de lumière d'ensemencement en un réseau monomode; un module de gain optique pour l'amplification de chaque faisceau lumineux monomode dans le réseau monomode; et une puce de guide d'ondes de combinaison de faisceaux d'ondes optiques pour effectuer une modulation de phase sur les faisceaux lumineux monomodes amplifiés et ensuite une combinaison des faisceaux lumineux monomodes pour former au moins un faisceau laser à émettre, la perte de transmission de lumière de chacune des deux puces sélectionnées étant inférieure à une première valeur prédéfinie. Grâce à la mise en oeuvre de la présente invention, le module de source de lumière et le module de gain optique sont connectés au moyen de la puce de guide d'ondes de division de faisceau d'ondes optiques dans un mode d'intégration inter-puces, de sorte que la structure d'une source de lumière d'ensemencement d'origine n'est pas endommagée, et la source de lumière d'ensemencement n'a pas besoin d'être spécialement personnalisée et présente une grande sélectivité; d'autre part, un traitement de combinaison de faisceaux est effectué sur la lumière amplifiée, et une puce ayant une faible perte de transmission de lumière est sélectionnée, de sorte qu'un laser haute puissance peut être porté, un mode unique est maintenu, et l'apparition du phénomène selon lequel la performance laser est réduite est évitée et même si le laser est grillé parce que la température est trop élevée.
PCT/CN2022/104196 2022-06-30 2022-07-06 Laser à semi-conducteur WO2024000612A1 (fr)

Applications Claiming Priority (2)

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CN202210771369.7A CN117374722A (zh) 2022-06-30 2022-06-30 一种半导体激光器
CN202210771369.7 2022-06-30

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WO2024000612A1 true WO2024000612A1 (fr) 2024-01-04

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