WO2020093189A1

WO2020093189A1 - Anti-reflection laser

Info

Publication number: WO2020093189A1
Application number: PCT/CN2018/113927
Authority: WO
Inventors: 沈红明; 许奔波; 宋小鹿
Original assignee: 华为技术有限公司
Priority date: 2018-11-05
Filing date: 2018-11-05
Publication date: 2020-05-14
Also published as: JP2022506323A; CN112956091A

Abstract

Disclosed is an anti-reflection laser (300). According to the anti-reflection laser, a stable longitudinal mode optical field distribution is formed between a high-reflection end face (380) of an optical feedback control unit (OFC) (310) and an optical grating layer (322) of a distributed feedback laser (320); and a discrete electrode structure is used, whereby the effective refractive index of an OFC (310) region is changed by adjusting the injection current intensity of a direct-current power source of the OFC (310), so that the compensation of phase position fluctuation in a cavity caused by outer reflected light is carried out on the laser (300), and the anti-reflection capacity is improved. According to the anti-reflection laser, isolator-free packaging of a light source can be achieved, the packaging and device size is reduced, the high-capacity small-sized high-density packaging requirement is met, multi-channel integration of the light source is achieved, and the process complexity is simplified.

Description

An anti-reflection laser

Technical field

The present application relates to the field of optical devices, and in particular to an anti-reflection laser based on DFB (Distributed Feedback Laser).

Background technique

DFB laser is widely used in data because of its advantages of high power, high single-mode performance (ie, high-side mode rejection ratio SMSR), narrow linewidth, low cost, etc. In scenarios such as center, access network, and metro long-distance transmission. Figure 1 is a schematic diagram of a conventional DFB laser structure. The traditional DFB chip structure is composed of an electrode 101, a grating layer 102, an active MQW (Multiple Quantum Well) layer 103, an AR (Antireflection) end face 104, an HR (High-reflection) end face 105, etc. Composition, above the active MQW layer 103 is the grating layer 102. The traditional DFB laser is very sensitive to external reflected light. Strong external reflected light will cause changes in the optical field, carrier concentration, effective refractive index, etc. in the cavity, and the phase conditions of the laser will also change, thus changing The intra-cavity mode of the DFB laser causes the signal power to fluctuate, which is manifested by the sharp deterioration of the RIN index, multi-mode output, line width broadening, and poor eye pattern quality. Therefore, in the traditional light source packaging scheme, an optical isolator is usually necessary to limit the interference of reflected light. However, optical isolators are very expensive in light source packaging modules and are very bulky. Especially in multi-channel silicon optical integration applications, it is difficult to integrate an isolator between the laser and the optical waveguide. Therefore, eliminating the optical isolator is a very effective and feasible way to reduce the cost of the optical module and achieve a highly sealed light source. The low-cost miniaturized light source package without isolator and the single-mode laser with high anti-reflection capability are the current research hotspots in the field of optical fiber communication.

FIG. 2 is a schematic diagram of an existing partially etched grating PC-DFB laser. The PC-DFB laser is composed of an electrode 201, a local grating layer 202, an active MQW layer 203, an AR end surface 204, an HR end surface 205, etc. There is only a local grating layer 202 above the active MQW layer 203, as shown in FIG. 2, the local grating The layer 202 is a uniform refractive index grating. In this structure, there is only one electrode 201, and current is uniformly injected into the region with grating and the region without grating. From the principle of anti-reflection, by changing some physical parameters of the non-grating region, such as light field distribution, length of the non-grating region, carrier concentration, etc., the phase fluctuations in the cavity caused by the externally reflected light of the laser can be compensated, thereby Improve the anti-reflection capability of the laser. The PC-DFB laser's ability to resist externally emitted light mainly comes from the formation of a very flat light field distribution in the non-grating area, which is not easily affected by external reflected light, so that the laser can maintain a stable longitudinal mode output. Therefore, the anti-reflection capability of the PC-DFB laser is closely related to the design of the grating length. When the laser cavity length L is fixed, by changing the grating structure length L ₂ , that is, the relative length L _{1 of the} non-grating region is relatively changed (L ₁ = L﹣L ₂ ) to provide suitable phase conditions; the ratio of the length L _{2 of the} optimized local grating layer to the total cavity length L of the entire DFB laser is generally between 0.5 and 0.7. The disadvantage of this technical solution is that there is only one electrode, adopting a unified current injection method, and a long enough grating-free region is needed to meet certain phase conditions, so the length of the grating gain region is shortened and the luminous efficiency is reduced; in addition, the anti-reflection ability Due to the gain coefficient of the active quantum well, lasers with different cavity lengths and gain coefficients of quantum well design need to optimize the grating length design separately, which increases the design complexity to a certain extent, thereby reducing the technical feasibility.

Summary of the invention

In view of this, the embodiments of the present invention provide an anti-reflection laser and an optical transmitter, so as to improve the anti-reflection capability of the laser and achieve the purpose of encapsulating the light source without an isolator.

In a first aspect, an embodiment of the present invention provides an anti-reflection laser, the anti-reflection laser includes an optical feedback control unit OFC, a distributed feedback laser DFB, an n-type substrate, three electrodes, an electrical isolation region, and a highly reflective HR end face And anti-reflective AR end faces. Among them, OFC and DFB are integrated on the n-type substrate, DFB stimulates the light emission by the corresponding power injection current, OFC adjusts the anti-reflection capability of the anti-reflection laser by controlling the intensity of the corresponding power injection current; the anti-reflection laser uses discrete electrodes The structure is used to connect the power supply. The three electrodes are distributed above the OFC, above the DFB and below the n-type substrate; the electrical isolation area is distributed between the OFC and the DFB to ensure sufficient electrical isolation between the two.

In a specific design, the optical feedback control unit OFC includes an OFC active layer, and the distributed feedback laser DFB includes a DFB active layer, a p-type cladding layer, and a grating layer disposed above the DFB active layer, p-type cladding layer Cover the upper surface of the grating layer. The OFC active layer is connected to the DFB active layer, and no grating structure is provided above the OFC active layer.

In a possible design, the grating layer may be any one of the following grating structures: uniform refractive index grating, phase shift grating, and gain-coupled grating structure.

In a first possible implementation manner of the first aspect, the high-reflection HR end face includes a high-reflection film layer, which is plated on the outer side of the OFC away from the DFB, and its role is to obtain high luminescence Power output; the anti-reflection AR end face includes an anti-reflection film layer, which is plated on the outer side of the DFB away from the OFC, and its role is to reduce the reflected light on the end face.

In a specific design, the OFC and the DFB are respectively powered by corresponding power sources of the two power sources. The two power sources include two DC power sources, one of which supplies power to the OFC, and the other to supply power to the DFB; Alternatively, the two power supplies include a DC power supply and a high-frequency signal power supply, the DC power supply supplies power to the optical feedback control unit OFC, and the high-frequency signal power supply supplies power to the DFB, at which time the DFB outputs modulated light.

With reference to the first possible implementation manner of the first aspect, in a second possible implementation manner of the first aspect, the anti-reflection laser includes a modulator, another electrode than the three electrodes, and the electrical isolation Another electrically isolated region outside the region; wherein, the modulator is integrated on the n-type substrate, the modulator is located on the side of the anti-reflection laser away from the OFC, and the modulator pair The output light of the DFB is intensity-modulated; the other electrode section is above the modulator, and the modulator is powered by another power supply than the two power supplies; the other electrical isolation division Between the DFB and the modulator, for forming electrical isolation between the DFB and the modulator.

Further, the high-reflection HR end face includes a high-reflection film layer, which is plated on the outer side of the OFC away from the DFB, and its function is to obtain high luminous power output; the anti-reflection AR end face It includes an anti-reflection film layer, which is plated on the outer side of the modulator away from the DFB, and its role is to reduce the reflected light on the end surface.

In a possible design, the modulator is an electro-absorption modulator or a Mach-Zehnder modulator.

In a specific design, one DC power supply powers the OFC, another DC power supply powers the DFB, and a high-frequency signal power supply powers the modulator. The modulator is used to modulate the light intensity of the DFB output light.

In a second aspect, an embodiment of the present invention provides an optical transmitter. The optical transmitter includes the anti-reflection laser and the coupler in the first possible implementation manner of the first aspect and the second possible implementation manner. The coupler includes an optical fiber coupling device or a waveguide coupling device; the anti-reflection laser is coupled with the coupler. The optical transmitter can realize multi-channel integration.

In a specific design, the fiber coupling device includes a collimating lens and a coupling lens introduced between the DFB in the anti-reflection laser and an external fiber; or, the fiber coupling device includes a lens fiber, the A ball lens is made on the end face of the optical fiber for coupling; or, the optical fiber coupling device includes a collimating lens and two coupling lenses introduced between the DFB in the anti-reflection laser and the external optical fiber.

In a specific design, the waveguide coupling device is aligned with the DFB in the anti-reflection laser, and the waveguide coupling device includes a silicon-based waveguide or an InP-based waveguide.

With reference to the first aspect and the second aspect, the electrically isolated regions of the embodiments of the present invention are formed by etching or ion implantation.

With reference to the first aspect and the second aspect, the OFC and DFB of the embodiments of the present invention adopt the ridge waveguide structure or the buried waveguide structure.

The structure of the anti-reflection laser provided by the embodiment of the present invention is to introduce a section of the optical feedback control unit OFC in the conventional full-grating DFB laser, and at the HR end surface of the optical feedback control unit OFC and the full-grating layer of the distributed feedback laser DFB A stable light field distribution is formed between; on the other hand, unlike the prior art PC-DFB laser, its anti-reflection capability requires a long enough grating-free zone length in the laser cavity to provide phase compensation, the present invention uses a discrete electrode structure , By adjusting the DC power injection current intensity of the optical feedback control unit OFC, the effective refractive index of the OFC region of the optical feedback control unit is effectively changed, thereby effectively adjusting the phase of the OFC region of the optical feedback control unit, as Suitable phase conditions are provided between the high-reflection HR end face and the full grating layer, thereby compensating the laser's intra-cavity phase fluctuations caused by externally reflected light, improving the tolerance of the laser's external light feedback, that is, improving the resistance Reflective ability.

The optical transmitter structure provided by the embodiment of the present invention is coupled with the coupler on the basis of the anti-reflection laser structure provided by the embodiment of the present invention, and can realize on-chip multi-channel integration.

Based on the above, the anti-reflection laser and optical transmitter provided by the embodiments of the present invention significantly improve the anti-reflection capability of the laser, can realize the light source without isolator package, greatly reduce the package size and device size, and meet the needs of high-capacity miniaturization and high sealing , To achieve multi-channel light source integration, does not need to independently optimize the grating design, compatible with existing process platforms, greatly simplifying the process complexity.

BRIEF DESCRIPTION

In order to more clearly explain the embodiments of the present invention or the technical solutions in the prior art, the following will briefly introduce the drawings used in describing the background technology and the embodiments. Obviously, the following drawings describe only a part of the embodiments of the present invention. For those of ordinary skill in the art, without paying any creative labor, other drawings or Examples, and the present invention is intended to cover all these derived drawings or examples.

Figure 1 is a schematic diagram of the structure of a traditional DFB laser;

2 is a schematic diagram of the structure of a PC-DFB laser in the prior art;

3a is a schematic structural diagram of an anti-reflection laser according to a first embodiment of the present invention;

3b is a schematic diagram of the internal structure of OFC and DFB of an anti-reflection laser according to the first embodiment of the present invention;

4 is a schematic structural diagram of an anti-reflection laser according to a second embodiment of the present invention.

5 is a schematic structural diagram of an optical transmitter according to a third embodiment of the present invention;

6 is a schematic diagram of a multi-channel integrated structure of an optical transmitter according to a third embodiment of the present invention;

7a is a schematic diagram of a ridge waveguide provided by an embodiment of the present invention;

7b is a schematic diagram of a buried waveguide provided by an embodiment of the present invention.

detailed description

In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, and are not intended to limit the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by a person of ordinary skill in the art without making creative efforts fall within the protection scope of the present invention.

FIG. 3a is a schematic structural diagram of an anti-reflection laser according to the first embodiment of the present invention. The anti-reflection laser 300 shown in FIG. 3a includes an OFC (Optical Feedback Controller, optical feedback control unit) 310, DFB 320, n-type substrate 330, electrode 340, electrode 350, electrode 360, electrical isolation region 370, HR end face 380 and AR end face 390. Among them, OFC310 and DFB320 are integrated on n-type substrate 330, DFB320 stimulates light emission by corresponding power injection current, OFC310 adjusts the antireflection capability of antireflection laser 300 by controlling the intensity of the corresponding power injection current; antireflection laser 300 uses Discrete electrode structure, used to connect the power supply, electrode 340 is distributed above OFC310, electrode 350 is distributed above DFB320, electrode 360 is plated under n-type substrate 330; electrode 340 and electrode 350 are separated by electrical isolation area 370 The isolation region 370 can ensure that the electrode 340 and the electrode 350 are electrically isolated.

Specifically, the backlight direction of the anti-reflection laser 300 is the outer side surface of the HR end surface 380, and the light emitting direction is the outer side surface of the AR end surface 390.

Further, the HR end surface 380 includes a highly reflective film layer, which is plated on the outer side of the OFC 310 away from the DFB 320, and its function is to obtain high luminous power output; the AR end surface 390 includes an anti-reflection film layer and an anti-reflection film layer Plated on the outer side of DFB320 away from OFC310, its function is to reduce the reflected light on the end surface.

Specifically, the electrode 340 of this embodiment may be injected with a DC power supply to adjust the anti-reflection capability of the anti-reflection laser 300. The greater the injection current, the stronger the anti-reflection capability.

Alternatively, the electrode 350 may be injected with a DC power source to excite the anti-reflection laser 300 to emit light and output continuous light; or the electrode 350 may also be input with a high-frequency signal power source, and the DFB 320 may output an optical modulation signal at this time.

Due to the discrete electrode structure, OFC310 and DFB320 are independently controlled, which can effectively improve the injection efficiency of OFC310 current.

Specifically, the electrical isolation region 370 is formed by etching or ion implantation to ensure sufficient electrical isolation between the OFC310 and the DFB320.

FIG. 3b is a schematic diagram of the internal structure of OFC and DFB of an anti-reflection laser according to the first embodiment of the present invention. As shown in FIG. 3b, OFC 310 includes an OFC active region 311, and DFB 320 includes a DFB active region 321, a grating layer 322, and a p-type cladding layer 323. The grating layer 322 is disposed over the entire surface of the DFB active region 321. The p-type cladding layer 323 covers the upper surface of the grating layer 322.

Specifically, the OFC active area 311 and the DFB active area 321 are connected, and no grating structure is provided above the OFC active area 311.

Alternatively, the grating layer 322 may be any one of the following grating structures: uniform refractive index grating, phase shift grating, and gain coupling grating structure.

Specifically, the OFC active region 311 and the DFB active region 321 adopt the same or different multi-quantum well active layer structure, and the quantum well material may be InGaAsP or InGaAlAs.

Preferably, the OFC active region 311 and the DFB active region 321 use the same multi-quantum well structure, which only needs one epitaxial growth, which greatly reduces the complexity and cost of the chip manufacturing process, and at the same time, reduces the light from DFB-MQW321 to OFC -The light loss and light reflection of MQW311 transmission improve the anti-reflection performance to a certain extent.

Preferably, the cavity length of the DFB320 is set to 250-450 μm, the cavity length of the OFC310 is set to 50-150 μm, and the length of the electrical isolation region 370 is set to 20-50 μm.

4 is a schematic structural diagram of an anti-reflection laser according to a second embodiment of the present invention. The anti-reflection laser 400 shown in FIG. 4 includes OFC410, DFB420, modulator 430, n-type substrate 440, HR end face 450, AR end face 460, electrode 470, electrode 480, electrode 490, electrode 4100, electrical isolation region 4110 and Electrical isolation zone 4120. Among them, OFC410, DFB420 and modulator 430 are integrated on n-type substrate 440, modulator 430 is disposed on the side of DFB420 away from OFC410, and is coupled with DFB420; anti-reflection laser 400 uses a discrete electrode structure for connecting the power supply, and electrode 470 is distributed Above OFC 410, electrode 480 is distributed over DFB 420, electrode 490 is distributed over modulator 430, electrode 470 and electrode 480 are separated by electrical isolation zone 4110, and electrode 480 and electrode 490 are separated by electrical isolation zone 4120. The electrical isolation region 4110 and the electrical isolation region 4120 can ensure that the electrode 470, the electrode 480, and the electrode 490 form sufficient electrical isolation from each other, and the electrode 4100 is plated under the n-type substrate 440.

Specifically, the backlight direction of the anti-reflection laser 400 is the side surface of the HR end surface 450, and the light emitting direction is the side surface of the AR end surface 440.

Further, the HR end face 450 includes a highly reflective film layer, which is plated on the outer side of the OFC 410 away from the DFB 420, and its function is to obtain high luminous power output; the AR end face 460 includes an anti-reflection film layer and an anti-reflection film layer Plated on the outer side of the modulator 430 away from the DFB 420, its function is to reduce the reflected light on the end surface.

Specifically, the electrode 470 of this embodiment is injected with a DC power supply to adjust the anti-reflective capability of the anti-reflective laser 400. The greater the injection current, the stronger the anti-reflective capability; , Output continuous light; electrode 490 uses high frequency signal power input. Due to the discrete electrode structure, OFC410 and DFB420 are independently controlled, which can effectively improve the injection efficiency of OFC410 current.

Specifically, the electrical isolation region 4110 and the electrical isolation region 4120 are formed by etching or ion implantation to ensure that the OFC410, DFB420, and modulator 430 have sufficient electrical isolation from each other to prevent crosstalk during high-speed modulation and affect transmission performance.

Specifically, the internal structure of OFC410 and DFB420 is shown in the related description in FIG. 3b, and will not be repeated here.

Specifically, the modulator 430 may be an EAM (Electro Absorption Modulator) or an MZM (Mach-Zehnder Modulator), which is used to intensity-modulate the output light of the DFB 420.

5 is a schematic structural diagram of an optical transmitter according to a third embodiment of the present invention. The optical transmitter 500 shown in FIG. 5 includes OFC 510, DFB 520, n-type substrate 530, electrode 540, electrode 550, electrode 560, electrically isolated region 570, HR end face 580, AR end face 590, and coupler 5100. Among them, OFC510 and DFB520 are integrated on n-type substrate 530; optical transmitter 500 uses a discrete electrode structure for connecting to the power supply, electrode 540 is distributed above OFC510, electrode 550 is distributed above DFB520, electrode 560 is plated under n-type substrate Square; the electrode 540 and the electrode 550 are separated by an electrical isolation region 570, the electrical isolation region 570 can ensure that the electrode 540 and the electrode 550 form electrical isolation; the coupler 5100 is disposed on the outer side of the DFB520 away from the OFC510, and with the DFB520 coupling.

Specifically, the internal structure of OFC510 and DFB520 is shown in the related description in FIG. 3b, and will not be repeated here.

Specifically, the backlight direction of the optical transmitter 500 is the side surface of the HR end surface 580, and the light emitting direction is the side surface of the AR end surface 590.

Specifically, the electrode 540 of this embodiment may be injected with a DC power supply to adjust the anti-reflection capability of the optical transmitter 400. The larger the injection current, the stronger the anti-reflection capability.

Further, the HR end face 480 includes a highly reflective film layer, which is plated on the outer side of the OFC 510 away from the DFB 520, and its function is to obtain high luminous power output; the AR end face 590 includes an anti-reflection film layer and an anti-reflection film layer Plated on the outer side of the modulator 530 away from the DFB 520, its role is to reduce the reflected light on the end surface.

Alternatively, the electrode 550 may be injected with a DC power source to excite the optical transmitter 500 to emit light and output continuous light; or the electrode 550 may also be input with a high-frequency signal power source, and the DFB 520 may output an optical modulation signal at this time.

Due to the discrete electrode structure, OFC510 and DFB520 are independently controlled, which can effectively improve the injection efficiency of OFC510 current.

Specifically, the electrical isolation region 570 is formed by etching or ion implantation to ensure sufficient electrical isolation between the OFC510 and the DFB520 to prevent crosstalk during high-speed modulation and affect transmission performance.

Specifically, the coupler 5100 is an isolator-free optical coupling device, and transmits the light output from the optical transmitter to an optical receiver at a far end through an optical fiber. .

Optionally, the optical coupling device may be an optical fiber coupling device. Specifically, the fiber coupling device includes a collimating lens and a coupling lens introduced between the DFB520 and the external fiber; or, the fiber coupling device includes a lens fiber, and a ball lens is made on the end face of the fiber for coupling; Alternatively, the optical fiber coupling device includes a collimating lens and two coupling lenses introduced between the DFB520 and the external optical fiber.

Optionally, the optical coupling device may be a waveguide coupling device. The waveguide coupling device includes a silicon-based waveguide or an InP-based waveguide. The DFB520 is aligned and coupled with the silicon-based waveguide or the InP-based waveguide. The optical signal output by the DFB520 may be in the waveguide Transmission, can realize on-chip multi-channel light source integration.

6 is a schematic diagram of a multi-channel integrated structure of an optical transmitter according to a third embodiment of the present invention. Fig. 6 shows the structure of the optical transmitter on-chip multi-channel light source integrated 600 when the coupler 5100 is a waveguide coupling device, including 610 anti-reflection laser and 620 waveguide coupling device.

7a is a schematic diagram of a ridge waveguide provided by an embodiment of the present invention. The ridge waveguide 710 shown in FIG. 7a includes an n-type substrate 711, an active layer 712, and a p-type cladding layer 713.

7b is a schematic diagram of a buried waveguide provided by an embodiment of the present invention. The ridge waveguide 720 shown in FIG. 7b includes an n-type substrate 721, an active layer 722, and a p-type cladding layer 723.

Preferably, the OFC and DFB of the embodiment of the present invention adopt the ridge waveguide structure or the buried waveguide structure.

The anti-reflection laser structure provided by the embodiment of the present invention is to introduce a short optical feedback control unit OFC outside the traditional DFB laser without a grating to form a stable light between the HR end surface of the OFC and the grating layer of the DFB Field distribution; In addition, a discrete electrode structure is used to change the effective refractive index of the OFC region by adjusting the DC power injection intensity of the OFC, thereby effectively adjusting the phase of the OFC region, and providing suitable phase conditions between the HR end face and the DFB grating. Therefore, the phase fluctuations in the cavity caused by the external reflected light of the laser are compensated, and the tolerance of the external light feedback of the laser is improved, that is, the anti-reflection ability is improved.

Based on the above, the anti-reflection laser and the optical transmitter provided by the embodiments of the present invention greatly improve the anti-reflection capability of the laser, can realize the light source without isolator package, greatly reduce the package size and device size, and meet the high-capacity miniaturization and high-sealing requirements It realizes multi-channel integration of light source, does not need to independently optimize the grating design, is compatible with the existing process platform, and simplifies the process complexity.

Those of ordinary skill in the art may understand that the control unit that implements the above-mentioned embodiments may be completed by hardware, or by a program instructing related hardware. The program may be stored in a computer-readable storage medium. The storage medium can be read-only memory, random access memory, etc. Whether the above control unit functions are executed in hardware or software depends on the specific application of the technical solution and design constraints. Professional technicians can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

When the control unit is implemented using software, the method steps described in the above embodiments may be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions. When the computer program instructions are loaded and executed on the computer, the processes or functions according to the embodiments of the present application are generated in whole or in part. The computer may be a general-purpose computer, a dedicated computer, a computer network, or other programmable devices. The computer instructions may be stored in a computer-readable storage medium or transferred from one computer-readable storage medium to another computer-readable storage medium, for example, the computer instructions may be from a website site, computer, server or data center Transmit to another website, computer, server or data center via wired (such as coaxial cable, optical fiber, digital subscriber line (DSL)) or wireless (such as infrared, wireless, microwave, etc.). The computer-readable storage medium may be any available medium that can be accessed by a computer or a data storage device including a server, a data center, and the like integrated with one or more available media. The usable medium may be a magnetic medium (for example, a floppy disk, a hard disk, a magnetic tape), an optical medium (for example, a DVD), or a semiconductor medium (for example, Solid State Disk (SSD)) or the like.

Finally, it should be noted that the above are only specific implementations of the present application, but the scope of protection of the present application is not limited to this, and any person skilled in the art may easily within the technical scope disclosed in the present application Changes or replacements should be included in the scope of protection of this application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

An anti-reflection laser, characterized in that the anti-reflection laser includes: an optical feedback control unit OFC, a distributed feedback laser DFB, an n-type substrate, an electrical isolation region, a high-reflection HR end face, an anti-reflection AR end face and three Metal electrodes, where:

The optical feedback control unit OFC and the DFB are integrated on the semiconductor n-type substrate, and the three electrodes are respectively distributed above the OFC, above the DFB, and below the n-type substrate, the Three electrodes are used to connect the power supply;

The OFC and the DFB are respectively powered by corresponding power sources of the two power sources, the DFB stimulates light emission by the corresponding power source injection current, and the OFC adjusts the anti-reflection laser by controlling the intensity of the corresponding power source injection current Anti-reflective ability;

The electrical isolation area is distributed between the OFC and the DFB, and is used to form electrical isolation between the OFC and the DFB;

The OFC includes an OFC active layer, and the DFB includes a DFB active layer, a p-type cladding layer, and a grating layer disposed above the surface of the DFB active layer;

The p-type cover layer covers the upper surface of the grating layer.
The anti-reflection laser according to claim 1, wherein the OFC active layer and the DFB active layer are connected, and no grating layer is provided above the OFC active layer.
The anti-reflection laser of claim 1, wherein the high-reflection HR end face includes a high-reflection film layer, the high-reflection film layer is plated on the outer side of the OFC away from the DFB; the anti-reflection The AR end surface includes an anti-reflection film layer, and the anti-reflection film layer is plated on the outer side surface of the DFB away from the OFC.
The anti-reflection laser according to claim 1, wherein the two power supplies include two DC power supplies, one of which supplies power to the OFC and the other supplies power to the DFB.
The anti-reflection laser according to claim 1, wherein the two power supplies include a DC power supply and a high-frequency signal power supply, the DC power supply supplies power to the optical feedback control unit OFC, and the high-frequency signal power supply DFB power supply.
The anti-reflection laser of claim 1, further comprising a modulator, another electrode other than the three electrodes, and another electrically isolated region other than the electrically isolated region; wherein, the A modulator is integrated on the n-type substrate, the modulator is located on a side of the anti-reflection laser away from the OFC, and the modulator performs intensity modulation on the output light of the DFB; the other The electrode part is above the modulator, and the modulator is powered by another power source than the two power sources; the other electrical isolation division is between the DFB and the modulator for An electrical isolation is formed between the DFB and the modulator.
The anti-reflection laser according to claim 6, wherein the end face of the high reflection HR comprises a high reflection film layer, the high reflection film layer is plated on the outer side of the OFC away from the DFB; The reflective AR end face includes an anti-reflection film layer, and the anti-reflection film layer is plated on the outer side of the modulator away from the DFB.
The anti-reflection laser according to claim 6, wherein the modulator is an electro-absorption modulator or a Mach-Zehnder modulator.
The anti-reflection laser according to claim 6, wherein the two power supplies include two DC power supplies, one of which supplies power to the OFC and the other supplies to the DFB; the other power supply is a high frequency Signal power supply to power the modulator.
The anti-reflection laser according to claim 1 or 6, wherein the electrical isolation region is formed by etching or ion implantation.
The anti-reflection laser according to claim 1 or 6, wherein the grating layer includes any one of the following grating structures: a uniform refractive index grating, a phase shift grating, and a gain coupling grating structure.
An optical transmitter, characterized in that the optical transmitter comprises the anti-reflection laser and the coupler according to any one of claims 1-11, wherein;

The coupler transmits the light output from the optical transmitter to the remote optical receiver through the optical fiber.
12. The optical transmitter according to claim 12, wherein the coupler includes a collimating lens and a coupling lens introduced between the DFB and the external optical fiber in the anti-reflection laser; or, the coupling The optical fiber includes a lens fiber, and a spherical lens is made on the end face of the optical fiber for coupling; or, the optical fiber coupler includes a collimating lens and two coupling lenses introduced between the DFB in the anti-reflection laser and an external optical fiber.
12. The optical transmitter according to claim 12, wherein the coupler includes a waveguide coupling device, the waveguide coupling device is aligned and coupled with the DFB in the anti-reflection laser, and the waveguide coupling device includes a silicon-based Waveguide or InP-based waveguide.