CN108649427A - Efficient lasing output DFB semiconductor laser device and integreted phontonics transmitting chip - Google Patents
Efficient lasing output DFB semiconductor laser device and integreted phontonics transmitting chip Download PDFInfo
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- CN108649427A CN108649427A CN201810440908.2A CN201810440908A CN108649427A CN 108649427 A CN108649427 A CN 108649427A CN 201810440908 A CN201810440908 A CN 201810440908A CN 108649427 A CN108649427 A CN 108649427A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1209—Sampled grating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
Abstract
The invention discloses a kind of efficient lasing output DFB semiconductor laser device and integreted phontonics transmitting chips.The frequency-selecting grating of the laser device is common uniform grating or uniform sampling grating, and there are two the electrode being electrically isolated from each other, an end faces of laser to be plated with highly reflecting films for it, another end face is coated with anti-reflection film or takes other anti-reflection light extraction measures.The present invention improves the efficiency of the effective lasing output laser of laser while reducing laser threshold；By changing phase-shifted region, feedback area's Injection Current size or ratio, under the premise of elimination end face phase adversely affects single mode laser characteristic, continuously adjusts single mode laser lasing and excitation wavelength meets ITU-T standard requirement.If total working electric current and operating temperature remain unchanged, change laser phase-shifted region and feedback area's Injection Current ratio so that when the continuously adjustable variation of single mode laser lasing and wavelength, laser lasing output power will fluctuate very little.
Description
Technical field
The invention belongs to photoelectron technical fields, are related to fiber optic communication, integreted phontonics, photoelectric sensing and other optical telecommunications
Breath processing.The present invention is that a kind of wavelength can fine adjustable efficient lasing output DFB semiconductor laser dress in a certain range
It sets and its manufacturing method.
Background technology
As the core devices of optical fiber telecommunications system, distributed feedback (Distributed Feedback, DFB) semiconductor
Laser is paid close attention to due to small, simple in structure by common people.To ensure the single mode yield of DFB semiconductor laser, lead to
It often needs to introduce true phase shift or equivalent phase shift in its frequency-selecting grating.In true phase shift or equivalent phase shift semiconductor laser
In, in order to eliminate various enchancement factors and caused by excitation wavelength drift about, excitation wavelength is controlled using wavelength tuning measure
Meet ITU-T standard requirement.
If it is single laser, using additional semiconductor heat electric refrigerator (Thermoelectric Cooler, TEC),
Relatively better excitation wavelength regulating effect can be obtained by electric heating tuning.But this electric heating tuning is used in integreted phontonics
When the single-slice integrated semiconductor laser array of (Photonic integration circuit, PIC), it is necessary to be each unit
Separate thermoelectricity temperature regulating device is arranged in laser, could mark separately adjustable each unit laser alignment difference ITU-T simultaneously
Quasi wave is long.
With adjust each unit laser Injection Current method, also can simultaneously independent control each unit laser excitation wavelength
It is directed at different ITU-T standard wavelength.In this way the shortcomings that is that laser array output laser power can be caused uneven
Weighing apparatus problem.The method that excitation wavelength is directed at ITU-T standard is adjusted using electric calorifie installation or change Injection Current, it is each except that can cause
It is serious unbalanced outer that unit laser exports laser power, the problem of also causing laser array structures complex.
Zhou Yating, Chen Xiangfei disclose a kind of phase shift in the Chinese invention patent of Patent No. ZL201210370711.9
Electric control sampling grating semiconductor laser and its setting method, Zhou Yating, Wang Gang, bright red are in Patent No.
A kind of phase shift electric control DFB semiconductor laser device and its system are disclosed in the Chinese invention patent of ZL201310078726.2
Make method, above-mentioned two pieces patent proposes a kind of new distributed feedback type semiconductor laser structure, in this laser structure
In, frequency-selecting grating can be common uniform grating or uniform sampling grating, and semiconductor laser structure is by two feedback areas
It is formed with a phase-shifted region, the electrode in two feedback areas can be joined together to form the same feedback region electrode with conducting wire, control
The density in system injection feedback area and phase-shifted region Injection Current, so that it may to control the true phase shift introduced in laser frequency-selecting grating
Or the size of equivalent phase shift, make single mode laser lasing and to adjust laser excitation wavelength opposite in lasing channel wave arrestment band
Position, to continuously fine-tune the excitation wavelength of laser in a certain range.
To eliminate adverse effect of the laser end face phase to laser lasing performance, the phase shift electricity in above-mentioned two pieces patent
Two end faces of control distributed feedback laser are usually required to plate anti-reflection film.When such laser works, from one
The half of the total lasing power of the laser power that end face effectively exports, only laser, that is to say, that its actually active lasing efficiency
It is 50%, the threshold current of laser is also relatively high.
Invention content
For semiconductor laser above shortcomings in the prior art, the present invention proposes a kind of new distributed feedback
Semiconductor laser structure.
Technical scheme of the present invention：
A kind of efficient lasing output DFB semiconductor laser device, the efficient lasing output DFB semiconductor laser dress
The frequency-selecting grating set is continuous uniform grating or uniform sampling grating (one of its ± 1 grade of sub-gratings are selected as lasing channel),
There are two the electrode being electrically isolated from each other, an end faces of laser to have plated highly reflecting films for it, is referred to as reflecting end face, laser
Reflection end face is referred to as phase shift region electrode adjacent to electrode, and the corresponding laser component of phase shift region electrode is referred to as phase-shifted region；Separately
One end face has then plated anti-reflection film or has taken other anti-reflection light extraction measures, is referred to as being emitted end face, the neighbouring electricity in outgoing end face
Pole is referred to as feeding back region electrode, and the feedback corresponding laser component of region electrode is referred to as feeding back area；
As a further improvement on the present invention, between adjacent phase-shifted region and feedback region electrode by being separated by a certain distance or
Person is mutually electrically isolated by way of injecting helium ion or being electrically isolated ditch by etching；
As a further improvement on the present invention, the reflectivity ＞ 90% of end face coating is reflected, end face coating or anti-reflection is emitted
The reflectivity ＜ 10% of measure；
As a further improvement on the present invention, phase-shifted region and the length ratio in feedback area are 1：2.
The present invention also provides a kind of distributed feedback type semiconductor laser single-chip integration array, the distributed feedback is partly led
Body laser single-chip integration array is made of above-mentioned efficient lasing output DFB semiconductor laser device.
The present invention also provides a kind of integreted phontonics transmitting chips, by laser monitoring device array, above-mentioned semiconductor laser list
Piece integrated array, modulator array, power equalizer array and multiplexer, by selecting area's epitaxial growth or docking growth skill
Art, successively growth are integrated on same epitaxial wafer.
The beneficial effects of the invention are as follows：
When the laser normal work of the present invention, area and phase-shifted region Injection Current are fed back by change, so that it may swash to control
The distribution phase shift introduced in light device, thus end face phase can be regulated and controled and be distributed the collective effect effect of phase shift, make laser
Single mode emission simultaneously controls relative position of the excitation wavelength in lasing channel wave arrestment band, continuously fine-tunes the lasing of laser
Wavelength.If the total Injection Current of laser remains unchanged, as long as by change feedback area, the ratio of phase-shifted region Injection Current,
It is capable of the excitation wavelength of finely regulating laser, and laser keeps similar thresholding and lasing output power.
Since an end face of laser has plated highly reflecting films, another end face has plated anti-reflection film or has taken other
Anti-reflection light extraction measure, on the one hand, laser overwhelming majority lasing power can be exported effectively, and substantially increasing laser has
The efficiency of effect output laser；On the other hand, the laser self-feedback in lasing cavity significantly increases, compared with anti-reflection film is plated in both ends
The threshold current of laser is greatly reduced in the length that laser resonant cavity can be shortened.
If frequency-selecting grating uses generic homogeneous grating, in identical operating current, by adjusting Laser feedback
The ratio in area and phase-shifted region Injection Current, it is ensured that while single mode laser lasing, it can be continuous fine in a certain range
Ground adjusts the excitation wavelength of laser, inswept multiple adjacent ITU-T standard wavelength.It can thus use identical sharp
Light device makes laser array, to substantially reduce the manufacturing cost of laser array, and each unit laser in laser array
There are similar threshold current and balanced lasing power output.
If frequency-selecting grating uses uniform sampling grating, in the case of identical seed grating, by being selected for sampled-grating
Select the different sampling periods, so that it may tentatively to be controlled excitation wavelength, by changing laser feedback area and phase-shifted region
Injection Current size or ratio, so that it may to fine-tune laser excitation wavelength in turn.Make frequency-selecting with using generic homogeneous grating
Grating is compared, and the controllable range of excitation wavelength can be greatly improved.Laser array is manufactured with such laser, lasing can be manufactured
The more multi-wavelength laser arrays of number of wavelengths.
Description of the drawings
Fig. 1 is the structural schematic diagram of laser of the present invention；
Fig. 2 is the process schematic representation that double ultraviolet light beam interference make uniform grating；
Fig. 3 is that double ultraviolet light beams interfere the process schematic representation for making sampled-grating through sampling template.
Fig. 4 is multi-wavelength integreted phontonics transmitting chip illustrative view of functional configuration.
Specific implementation mode
Invention is further described in detail below in conjunction with the accompanying drawings.
Embodiment one
The present embodiment provides a kind of efficient lasings to export DFB semiconductor laser device, as shown in Figure 1, its frequency-selecting grating
For uniform grating or uniform sampling grating, entire laser is divided into phase-shifted region and feedback area's two parts, end face plating where phase-shifted region
Highly reflecting films are gone up, feedback area end face plates anti-reflection film or takes other anti-reflection light extraction measures.
In the present embodiment：It, can be by being separated by a certain distance or by injecting helium between phase-shifted region and the electrode for feeding back area
It ion or the modes such as ditch is electrically isolated by etching is mutually electrically isolated.
The realization principle that the efficient lasing output DFB semiconductor laser device excitation wavelength of the present invention fine-tunes is as follows：
We illustrate by taking Fig. 1 as an example, for simplicity, if the length of laser feedback area and phase-shifted region is respectivelyLP=L, then when different current densities are injected in laser feedback area and phase-shifted region, since heating effect of current (plays master
Act on) and carrier plasma effect collective effect effect, the effective refractive index n in laser feedback area and phase-shifted regionRWith
nPWill be different, thus in optical transport space, the uniform grating of lasing channel has reformed into chirped modulation grating, is obtained in lasing channel
The distribution phase shift theta obtainedDPSSize is represented by
Λ is the screen periods for feeding back area's lasing channel.At the same time, since the end face of phase-shifted region is coated with highly reflecting films, because
And there is the end face phase theta of arbitrary size in this end face of laserEFPS, it is distributed phase shift thetaDPSWith end face phase thetaEFPSJoint make
With effect, the lasing channel that can be regarded as in laser introduces a total phase shift thetaAlways, have
θAlways=θDPS+θEFPS (2)
θAlwaysDetermine relative position of the excitation wavelength in lasing channel forbidden band.Change IRAnd IPSize also just changes point
Cloth phase shift thetaDPSSize accordingly just changes total phase shift thetaAlwaysSize, this allows for relative position of the excitation wavelength in forbidden band and occurs
It changes, when laser lasing will back and forth change between single mode and dual-mode of operation state.
If the distribution phase shift theta introducedDPSSize is suitable, total phase shift thetaAlwaysLaser works will be made in single mode emission state.
Continuously change I at this timeRAnd IPSize, relative position of the excitation wavelength in forbidden band will recur variation, you can continuous fine
Adjust the excitation wavelength of laser.
If frequency-selecting grating is sampled-grating, we are typically that one of its ± 1 grade of sub-gratings is selected to be used as its lasing channel.
Assuming that seed screen periods are Λ0, sampling period P, then the screen periods of lasing channel be
Formula (1) stands good, and only grating period A is strained into Λ in formula (1)±1, change IRAnd IPWhen size, to swashing
The regulating effect of ejected wave length is still similar.
Embodiment two
The present embodiment provides a kind of distributed feedback type semiconductor laser single-chip integration arrays, and the integrated array is by embodiment
Efficient lasing output DFB semiconductor laser device described in one is constituted.
The present embodiment also provides a kind of integreted phontonics transmitting chip (as shown in Figure 4), the module by laser monitoring device array,
Above-mentioned distributed feedback type semiconductor laser single-chip integration array, modulator array, power equalizer array and multiplexer, pass through
Area's epitaxial growth or docking growing technology are selected, growth, which is integrated on same epitaxial wafer, successively is constituted.
Embodiment three
The present embodiment is by the production method of a kind of distributed feedback type semiconductor laser and its array, and its step are as follows：
(1) on N-shaped InP substrate material successively extension N-shaped InP buffer layers, 100nm thickness undoped Lattice Matching
InGaAsP lower limit layers, the p-type Lattice Matching InGaAsP upper limiting layers for straining InGaAsP multiple quantum wells and 100nm thickness；
(2) production method of grating：
1. the production method of uniform grating：The method exposed with double-beam holographic interference, arrives uniform grating pattern recording
On photoresist on upper limiting layer, material etch is then imposed, forms required uniform grating structure on upper limiting layer top.Figure
2 be the process schematic representation that double ultraviolet light beam interference make uniform grating.
2. the production method of uniform sampling grating, the side being exposed through sampling photolithography plate with double-beam holographic interference
Method is transferred to sampled-grating pattern on the photoresist on upper limiting layer, then imposes material etch, in upper limiting layer top shape
At required sampled-grating structure.Fig. 3 is that the technique that double ultraviolet light beams transmission sampling templates interfere making sampled-grating is shown
It is intended to.
(3) after preparing grating is good, then pass through secondary epitaxy growth p-type layer of InP and p-type InGaAs ohmic contact layers.
After epitaxial growth, using common photoetching combination selective wet chemical etching, the making of ridge waveguide is completed；
(4) plasma enhanced chemical vapor deposition method technique is used, one layer of 300nm thickness of deposition around ridge waveguide
SiO2Layer or organic matter BCB insulating layers；
(5) followed by photoetching and selective wet chemical etching, the SiO above laser ridge is removed2Layer or organic matter
BCB insulating layers expose its InGaAs ohmic contact layer；
(6) method for using magnetron sputtering, the Ti and 400nm of 100nm thickness are plated in the top of entire laser structure respectively
Thick Au forms Ti-Au metals in conjunction with photoetching process and selective wet chemical etching on the InGaAs ohmic contact layers above vallum
P electrode；
(7) after entire laser wafer being then thinned to 150 μm, the upper 500nm thickness of vapor deposition in the lower section of base material
Au-Ge-Ni alloys are as N electrode；
By the making for the multi-wavelength laser array chip that invention unit distributed feedback type semiconductor laser forms, with
The distributed feedback type semiconductor laser of single wavelength is compared, and except end face plates highly reflecting films, other end is plated anti-reflection film or adopted
With outside other anti-reflection light extraction measures, in addition to this remaining manufacturing process is identical.
In conclusion the grating of the efficient lasing output DFB semiconductor laser device of the present invention is generic homogeneous grating
Or uniform sampling grating；Highly reflecting films are plated in one end face of this laser, and the neighbouring electrode in plating highly reflecting films end face claims phase
Region electrode is moved, corresponding laser component claims phase-shifted region；Another end face plating anti-reflection film of this laser uses other
Anti-reflection light extraction measure is plated anti-reflection film or is claimed to feed back region electrode using the neighbouring electrode in other anti-reflection light extraction measure end faces, and institute is right
The laser component answered claims to feed back area；It is mutually electrically isolated by certain mode between adjacent phase-shifted region and feedback region electrode.By changing
Become feedback area, phase-shifted region Injection Current, so that it may to continuously adjust the common of the distribution phase shift and end face phase that are introduced in laser
Function and effect make laser obtain single mode emission and continuously fine-tune laser excitation wavelength and meet ITU-T standard requirement.
Under conditions of laser total working electric current remains unchanged, as long as by change feedback area, the ratio of phase-shifted region Injection Current,
It is capable of the excitation wavelength of finely regulating laser, and laser keeps similar thresholding and lasing output power.
The above is the preferred embodiment of the present invention, it should be pointed out that：Those skilled in the art are come
It says, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (7)
1. efficient lasing exports DFB semiconductor laser device, it is characterised in that：The frequency-selecting grating of described device is along laser cavity
Continuous uniform grating or uniform sampling grating, it is to be coated with there are two the electrode being electrically isolated from each other, an end face of laser
The reflection end face of highly reflecting films, it is phase shift region electrode, the corresponding laser of phase shift region electrode that laser, which reflects end face adjacent to electrode,
Device part is phase-shifted region；Another end face is the outgoing end face for being coated with anti-reflection film or taking anti-reflection light extraction measure, and outgoing end face is adjacent
Nearly electrode is feedback region electrode, and the feedback corresponding laser component of region electrode is feedback area.
2. efficient lasing according to claim 1 exports DFB semiconductor laser device, it is characterised in that：Adjacent phase
It moves between area and feedback region electrode by way of spacing is set or is electrically isolated ditch by injection helium ion or by etching
Mutually it is electrically isolated.
3. efficient lasing according to claim 1 exports DFB semiconductor laser device, it is characterised in that：Reflect end face
The reflectivity ＞ 90% of plated film is emitted end face coating or the reflectivity ＜ 10% of anti-reflection measure.
4. efficient lasing according to claim 1 exports DFB semiconductor laser device, it is characterised in that：Phase-shifted region and
The length ratio for feeding back area is 1：2.
5. a kind of distributed feedback type semiconductor laser single-chip integration array, it is characterised in that：Including several Claims 1-4
Any one of described in efficient lasing export DFB semiconductor laser device, each efficient lasing exports DFB semiconductor laser
The structure of device is identical, but the size and ratio injected phase-shifted region by adjusting, feed back area's electric current, finely controls each unit laser
Device excitation wavelength is directed at different ITU-T standards.
6. a kind of distributed feedback type semiconductor laser single-chip integration array, it is characterised in that：Including several Claims 1-4
Any one of described in efficient lasing export DFB semiconductor laser device, each efficient lasing exports DFB semiconductor laser
The grating of device is the identical sampled-grating of seed grating；By selecting the different sampling periods, carries out and each unit is swashed
The preliminary control of light device excitation wavelength, the size and ratio injected phase-shifted region by adjusting, feed back area's electric current, finely controls each list
First laser excitation wavelength is directed at different ITU-T standards.
7. a kind of integreted phontonics transmitting chip, it is characterised in that：By laser monitoring device array, distribution described in claim 5 or 6
Feedback type semiconductor laser single-chip integration array, modulator array, power equalizer array and multiplexer, by selecting outside area
Epitaxial growth or docking growth, growth, which is integrated on same epitaxial wafer, successively is constituted.
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| WO2020093189A1 (en) * | 2018-11-05 | 2020-05-14 | 华为技术有限公司 | Anti-reflection laser |
| CN112993753A (en) * | 2021-02-07 | 2021-06-18 | 桂林雷光科技有限公司 | Monolithic integrated waveguide device and integrated semiconductor chip thereof |
| CN113224638A (en) * | 2021-04-08 | 2021-08-06 | 常州工学院 | SBG semiconductor laser device for sampling by using electrode |
| CN113991423A (en) * | 2021-09-27 | 2022-01-28 | 南京华飞光电科技有限公司 | Semiconductor laser based on distributed phase compensation technology |
| CN114552390A (en) * | 2022-02-25 | 2022-05-27 | 常州工学院 | Semiconductor laser device for regulating and controlling lasing wavelength by intermittent energization of ridge |
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| CN114552390A (en) * | 2022-02-25 | 2022-05-27 | 常州工学院 | Semiconductor laser device for regulating and controlling lasing wavelength by intermittent energization of ridge |
| CN114552390B (en) * | 2022-02-25 | 2023-09-19 | 常州工学院 | Semiconductor laser device for regulating and controlling lasing wavelength by intermittent energization of ridge |
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