JP6588851B2 - External cavity laser light source - Google Patents

Description

  The present invention relates to a light source used for optical communication, and more particularly to an external resonator type laser light source.

  In order to cope with the rapid increase in the amount of optical communication, studies for increasing the capacity of communication networks are being actively conducted. In particular, the introduction of wavelength division multiplexing and multi-level modulation is advancing, and optical communication lasers are increasingly required to have wavelength tunability and narrow linewidth. In order to satisfy this requirement, studies on an external resonator type laser light source in which an external resonator manufactured using an optical waveguide and a semiconductor optical amplifier are connected in a hybrid manner have been actively conducted.

  On the other hand, optical transceivers are required to be miniaturized and functionally integrated, and in recent years, interest in optical transceivers using silicon photonics (SiPh) has increased. Therefore, it is expected that an external resonator type laser light source composed of a Si optical waveguide and a semiconductor optical amplifier is hybrid-integrated with a SiPh transceiver, and studies are in progress (Non-Patent Document 1).

  Specifically, it is required to hybridly integrate a semiconductor optical amplifier usually composed of a compound semiconductor such as InP and a Si waveguide chip (SiPh chip) including an optical modulator, a photodetector, an optical filter, and the like. ing. At this time, when long-distance optical transmission (for example, transmission of 500 km or more) is assumed, it is necessary to increase the output of the laser light source (for example, on-chip output of 16 dBm or more). As a method for increasing the output of the laser light source, a method of using two individual semiconductor optical amplifiers (SOA) for one laser is conceivable. In this study, two SOAs having substantially the same gain band are used as components of the external resonator type laser light source in order to increase the output.

Japanese Patent No. 569388

T.A. Kita, et al. "Silicon Photonic Wavelength-Tunable Laser Diode with Asymmetric Mach-Zehnder Interferometer", IEEE J. Sel. Top. Quant. Electron. , 20, 8201806, 2014.

  However, when two or more SOAs are used in the laser resonator, the amplification factor of the external resonator type laser light source can be increased and the output can be increased, but the wavelength tunable filter used in the external resonator unit ( For example, there is a problem that high output light is input to a ring resonator and the transmission characteristics of the wavelength tunable filter are changed.

  FIG. 1 shows a schematic diagram of a conventional external resonator type laser light source. The external resonator type laser light source shown in FIG. 1 is a ring resonator type formed on a first semiconductor optical amplifier (SOA) 10, a second semiconductor optical amplifier (SOA) 20, and a Si optical waveguide chip 40. It is comprised with the wavelength tunable filter 30 comprised by these optical filters.

  The first SOA 10 and the first input / output port 31 of the wavelength tunable filter 30 are optically connected by the Si optical waveguide 41 on the Si optical waveguide chip 40, and the second SOA 20 and the wavelength tunable filter 30 are connected to each other. The second input / output port 32 is optically connected by a Si optical waveguide 42 on the Si optical waveguide chip 40.

  The optical output is obtained from the left (outer) end face 11 of the first SOA 10, the left (outer) end face 21 of the second SOA 20, and the right output port 33 of the wavelength tunable filter 30. Since the end surfaces 12 and 22 on the Si optical waveguide chip 40 side of the first and second SOAs 10 and 20 are optically connected to the Si optical waveguides 41 and 42 of the Si optical waveguide chip 40, a non-reflective coating is applied. .

  Here, the laser resonator of the external resonator type laser light source is a laser beam which is formed by the outer end face 11 of the first SOA having a predetermined reflectance and the outer end face 12 of the second SOA and resonates. Are amplified by reciprocating via the SOAs 10 and 20, the Si optical waveguides 41 and 42, and the wavelength tunable filter 30. At this time, high-power light amplified by the first and second SOAs 10 and 20 is directly input to the Si optical waveguides 41 and 42.

  This high output light is input to the first and second input / output ports 31 and 32 of the wavelength tunable filter 30 with only a small waveguide loss in the Si optical waveguides 41 and 42 and almost no attenuation. That is, the high-power light that is the sum of the inputs of the two ports is directly input to the wavelength tunable filter 30.

  As described in Non-Patent Document 1, such high output light causes non-linear light absorption peculiar to the Si optical waveguide constituting the wavelength tunable filter, and causes an unintended refractive index change due to heat and carriers. For example, when a ring resonator type optical filter is used as a component of the wavelength tunable filter 30, the resonance wavelength of the ring resonator changes depending on the input light intensity, which is not preferable from the viewpoint of oscillation wavelength control. .

  The present invention has been made in view of such problems, and an object of the present invention is to reduce the optical input power to the wavelength tunable filter in an external resonator laser including a semiconductor optical amplifier and a wavelength tunable filter. Another object of the present invention is to provide an external resonator type laser light source which can reduce the characteristic change due to the light intensity of the wavelength tunable filter and can stably control the oscillation wavelength while having a high optical power output.

  In order to achieve such an object, the present invention is characterized by having the following configuration.

(Structure 1 of the invention)
A first optical amplifier, a second optical amplifier,
A tunable filter that is formed in a single Si optical waveguide chip and optically connects the first optical amplifier and the second optical amplifier ;
The first optical amplifier and the second optical amplifier have substantially the same gain characteristics, and the end surfaces at both ends have the same configuration. The outer end surface of the first optical amplifier and the outer surface of the second optical amplifier An external resonator type laser light source in which a resonator is configured with an end face,
A first optical tap structure formed in the Si optical waveguide chip between the first optical amplifier and the wavelength tunable filter;
A second optical tap structure formed in the Si optical waveguide chip between the second optical amplifier and the tunable filter,
An external resonator type laser light source , wherein laser light is output from at least one of the optical output ports of the optical tap structure to reduce optical input power to the wavelength tunable filter .

(Structure 2 of the invention)
The external resonator type laser light source according to Configuration 1 of the invention, wherein the first optical amplifier and the second optical amplifier are constituted by a single 2ch integrated semiconductor optical amplifier.

(Structure 3 of the invention)
The external resonator type laser light source according to Configuration 1 or 2 , wherein the wavelength tunable filter is a ring resonator filter having a phase shifter on a ring optical waveguide.

(Structure 4 of the invention)
4. The external resonator type laser light source according to any one of configurations 1 to 3 , wherein the wavelength tunable filter is an optical filter in which two or more ring resonators are optically connected.

(Structure 5 of the invention)
5. The external resonance according to any one of configurations 1 to 4 , wherein the first optical tap structure and the second optical tap structure are 2 × 2 optical couplers each having an arbitrary coupling efficiency. Type laser light source.

(Structure 6 of the invention)
Any one of configurations 1 to 5 of the invention, wherein a wavelength locker is optically connected to one optical output port of the first optical tap structure and the second optical tap structure to constitute a wavelength control mechanism. An external resonator type laser light source described in 1.

(Structure 7 of the invention)
Configurations 1 to 5 of the invention, comprising: an optical modulator formed in the Si optical waveguide chip and having an input connected to an optical output port of the first optical tap structure and the second optical tap structure. The external resonator type laser light source according to any one of the above.

  With the present invention, in an external cavity laser that operates using a semiconductor optical amplifier and a wavelength tunable filter, the optical input power to the wavelength tunable filter is reduced, the characteristic change of the wavelength tunable filter is reduced, and the high optical power output However, stable oscillation wavelength control is possible.

It is a block diagram which shows the conventional external resonator type laser light source. It is a block diagram which shows the external resonator type laser light source which concerns on Example 1 of this invention. It is a figure which shows another structure of the external resonator type laser light source which concerns on Example 1 of this invention. It is a section lineblock diagram of Si optical waveguide chip of the present invention. It is a block diagram which shows the external resonator type laser light source which concerns on Example 2 of this invention. It is a block diagram which shows the external resonator type laser light source which concerns on Example 3 of this invention. It is a block diagram which shows the external resonator type laser light source which concerns on Example 3 of this invention. It is a block diagram which shows the external resonator type laser light source which concerns on Example 4 of this invention. It is a block diagram which shows the external resonator type laser light source which concerns on the comparative example with Example 4 of this invention.

Example 1
FIG. 2 is a configuration diagram illustrating the external resonator type laser light source according to the first embodiment of the present invention. As shown in FIG. 2, the external resonator type laser light source of Example 1 includes two semiconductor optical amplifiers (SOA) 10 and 20 and a phase shifter 133 and functions as a wavelength tunable filter. The filter 130 includes 2 × 2 optical couplers 150 and 160 and optical phase shifters 141 and 142 provided on two paths of the optical waveguide connecting them.

  The optical phase shifters 133, 141, 142, 2 × 2 optical couplers 150 and 160, and ring resonator filter 130 are formed in a single Si optical waveguide chip 40. Each of the 2 × 2 optical couplers 150 and 160 has first to fourth four ports (151 to 154 and 161 to 164).

  The second port 152 of the 2 × 2 optical coupler 150 is optically connected to the first SOA 10 through a Si optical waveguide via the optical phase shifter 141, and the fourth port 154 is a ring resonator through the Si optical waveguide. Optically connected to the first input / output port 131 of the filter 130. The first port 151 and the third port 153 of the 2 × 2 optical coupler 150 are connected to the outside of the Si optical waveguide chip 40 by Si optical waveguides, and can be used as output ports.

  Similarly, the second port 162 of the 2 × 2 optical coupler 160 is optically connected to the second SOA 20 via the optical phase shifter 142 via the Si optical waveguide, and the fourth port 164 is an Si optical waveguide. Optically connected to the second input / output port 132 of the ring resonator filter 130. The first port 161 and the third port 163 of the 2 × 2 optical coupler 160 are also connected to the outside of the Si optical waveguide chip 40 by optical Si optical waveguides, and can be used as output ports.

  These two 2 × 2 optical couplers 150 and 160 optically connect the two optical amplifiers (SOA), the ring resonator filter 130 (wavelength tunable filter), and the output port, and from inside the laser resonator to outside the resonator. 1st and 2nd optical tap structure for performing light extraction to the right is comprised.

  In the external resonator type laser light source of the first embodiment, by providing such an optical tap structure, laser light is output from at least one optical output port of the first optical tap structure or the second optical tap structure. As a result, the optical input power to the wavelength tunable filter is reduced, the characteristic change due to the light intensity of the wavelength tunable filter is reduced, and stable oscillation wavelength control is possible while maintaining a high optical power output.

  In the first embodiment, the laser resonator includes an outer end face 11 of the first SOA and an outer end face 21 of the second SOA. The gain spectrum of the SOA and the ring resonator in the resonator. The oscillation wavelength is selected by the transmission spectrum of the filter 130. By adjusting the phase shifters 133, 141, and 142 on the ring of the ring resonator filter 130, the laser oscillation wavelength can be made variable.

(Semiconductor optical amplifier)
A first semiconductor optical amplifier (SOA) 10 in FIG. 2 includes an end face 11, an end face 12 connected to the Si optical waveguide chip, a spot size converter (SSC) 13, and an optical amplifying unit 14. Is done. For example, an InP-based waveguide optical amplifier is used as the SOA.

  The end face 11 on the outside (left side) of the SOA 10 can be used as a half mirror having a reflectivity of about 0.3 if no thin film coating or the like is performed. However, in this configuration, light is not extracted from the end face 11. Therefore, by performing thin film coating, the reflectance can be set to a value close to 1 as a high reflection (HR) surface.

  An end surface 12 of the SOA 10 on the Si optical waveguide chip 40 side (right side) is a connection surface with the Si optical waveguide, and an anti-reflection (AR) coating can be applied to prevent reflection. Similarly, in order to prevent reflection, for example, an oblique waveguide inclined by 6 ° from a perpendicular to the end face can be introduced.

  An optical spot size converter (SSC) 13 is introduced to match the mode field diameter of the Si optical waveguide with the mode field diameter at the exit end of the SOA. For example, a flare taper SSC having a tip width of 3.5 μm can be used as the SSC 13.

  Further, the SOA 10 and the Si optical waveguide chip 40 fix the relative positions of the chips at the positions where the emitted light from the respective elements is optically coupled. For example, it can be fixed by a flip chip mounting method or the like.

  The second SOA 20 is manufactured to have substantially the same gain characteristics as the first SOA 10, and the end surfaces 21 and 22 at both ends have the same configuration as the end surfaces 11 and 12 of the SOA 10.

  As shown in FIG. 3, instead of using SOAs 10 and 20 of separate chips, a single 2ch integrated semiconductor optical amplifier (SOA) 50 may be used to realize the optical amplification function. By using the 2ch integrated SOA 50, the SOA mounting process can be reduced and the manufacturing process can be simplified as compared with the case of mounting two individual SOAs.

(Si optical waveguide, optical phase shifter)
FIG. 4 shows a cross-sectional configuration diagram of a Si optical waveguide used in the Si optical waveguide chip 40 of FIG. 4 is formed with a buried structure in the SiO ₂ film 910 on the Si substrate 900.

Further, as shown in FIG. 4 upper (133,141,142 addition Figure 2) optical phase shifter is composed of the heater 930 and the TaN and Al TiN on SiO ₂ film 910 on the Si wire waveguide 920 electrode 940 This can be realized by forming a heater that is heated by energization. The optical phase of the waveguide can be adjusted by applying electric power to the heater to generate heat and changing the refractive index using thermal expansion caused by the temperature change of the waveguide. A similar optical phase shifter can also be used to adjust the longitudinal mode position of laser oscillation.

  Exemplary cross-sectional dimensions of each part of the Si wire waveguide 920 and the optical phase shifter are as shown in FIG. Hereinafter, the term “optical phase shifter” refers to a cross-sectional structure similar to that of the heater 930.

(2 × 2 optical coupler)
As the 2 × 2 optical couplers 150 and 160 having the optical tap structure realized by the Si optical waveguide shown in FIG. 2, there is a method realized by using, for example, a directional coupler. At this time, a 2 × 2 optical coupler having an arbitrary optical coupling ratio (coupling efficiency) can be realized by changing the coupling length of the directional coupler. In addition to the directional coupler, the functions of the 2 × 2 optical couplers 150 and 160 may be realized by using a 2 × 2 optical coupler using a multimode interference optical coupler or other 2 × 2 filters. .

  In the first embodiment, it is assumed that the first and second 2 × 2 optical couplers 150 and 160 have power coupling ratios (coupling efficiency) of κ1 and κ2. These values of κ are specifically determined in consideration of the SOA and can be set to κ: 0.8, for example.

  Here, it is assumed that 0 <κ1 and κ2 <1. At this time, when light is input to the second port 152 of the first 2 × 2 optical coupler 150, (κ1) × 100% power light is transmitted to the third port 153 to the fourth port 154 (1−κ1). X100% power light is branched and output.

  Similarly, when light is input to the second port 162 of the second 2 × 2 optical coupler 160, light of (κ2) × 100% power is input to the third port 163 (1− κ2) × 100% power light is branched and output.

  By providing such 2 × 2 optical couplers 150 and 160 as two optical tap structures, the amount of optical power input to the ring resonator filter 130 that is a wavelength tunable filter can be reduced.

(Ring resonator filter)
The ring resonator filter 130 of FIG. 2 has a periodic transmission peak (resonance peak) in transmission from the first input / output port 131 to the second input / output port 132. Therefore, laser oscillation can be performed at a wavelength near the resonance peak position with the highest gain of the SOAs 10 and 20. Here, it is assumed that the resonance peak is designed so sharp that the adjacent longitudinal mode can be sufficiently suppressed.

  The resonance peak position of the ring resonator filter 130 can be made variable by adjusting the power applied to the heater provided in the optical phase shifter 133 provided in the ring-shaped optical waveguide in the filter.

  In this embodiment, the ring resonator filter 130 is used as the wavelength tunable laser. However, a Mach-Zehnder interferometer type filter or a black grating filter having a variable transmission wavelength may be used as the wavelength tunable filter. .

(Suppression of optical power input to ring resonator filter)
The optical power input to the wavelength tunable filter 30 and the ring resonator filter 130 is compared between the conventional configuration of FIG. 1 and the configuration of the first embodiment of FIG. First, the amount of light amplified by the SOA 10 is compared with the amount of light input from the first input / output ports 31 and 131 to the wavelength tunable filter 30 and the ring resonator filter 130.

  In the conventional configuration of FIG. 1, the light amplified and output by the SOA 10 is only subjected to a small waveguide loss, and is input to the first input / output port 31 of the wavelength tunable filter 30 with almost no attenuation. . On the other hand, in the configuration of the first embodiment shown in FIG. 2, the light amplified and output by the SOA 10 is output from the resonator by the first 2 × 2 optical coupler 150 in addition to the minute waveguide loss. After receiving the loss due to light extraction, it is input to the ring resonator filter 130.

  Specifically, (1-κ1) × 100% of the light input to the second port 152 of the first 2 × 2 optical coupler is output to the fourth port 154. Therefore, the light input to the first input / output port 131 of the ring resonator filter 130 is reduced by (1−κ1) × 100% in the present configuration compared to the conventional configuration.

  Similarly, the amount of light amplified by the SOA 20 is input to the wavelength tunable filter 30 and the ring resonator filter 130 from the second input / output ports 32 and 132. Based on the same discussion as described above, in the configuration of the first embodiment in FIG. 2 in comparison with the conventional configuration in FIG. 1, the ring resonance occurs in consideration of the loss due to the light extraction in the second 2 × 2 optical coupler 160. The optical power input to the second input / output port 132 of the filter 130 is reduced by (1−κ2) × 100% in this configuration compared to the conventional configuration.

  As described above, in the configuration of the first embodiment, the amount of optical power input to the ring resonator filter 130 can be reduced, the change in the resonance wavelength due to the light intensity of the ring resonator is reduced, and the stable oscillation wavelength Control becomes possible.

(Example 2)
FIG. 5 is a configuration diagram showing an external resonator type laser light source according to the second embodiment of the present invention. In the second embodiment, with respect to the features described in the first embodiment, portions having the same function are denoted by the same reference numerals, and redundant description is omitted. Also, in the embodiments after the second embodiment, portions having the same functions as those of the previous embodiments are denoted by the same reference numerals, and redundant description is omitted.

(Difference from Example 1 and its effect)
As shown in FIG. 5, the external resonator type laser light source of the second embodiment has a ring resonator filter 130 instead of the ring resonator filter 130 using the single ring resonator of the external resonator type laser light source of the first embodiment. A double ring filter 230 is used in which two ring resonators having different circulation lengths are optically coupled in series.

  As described in Non-Patent Document 1, the double ring filter 230 can form a vernier type filter using the periodicity of two different ring resonators. In this vernier filter, the period of the transmission spectrum of the filter can be substantially expanded as compared with the case where one ring resonator is used. Since the period of the transmission spectrum of the filter limits the wavelength tunable region at the time of single wavelength oscillation, in Example 2, a laser having a wider wavelength tunable region can be realized compared to Example 1.

(Double ring filter)
The double ring filter 230 has a transmission spectrum with a period expanded by the vernier effect of two ring resonators in the transmission from the first input / output port 231 to the second input / output port 232. Therefore, laser oscillation can be performed at a wavelength near the transmission peak having the highest gain of the SOAs 10 and 20. Here, it is assumed that the transmission peak of each ring resonator is designed to be sharp enough to sufficiently suppress the adjacent longitudinal mode in laser oscillation. The transmission peak position of the double ring filter 230 can be made variable by adjusting the power applied to the heaters provided in the first optical phase shifter 233 and the second optical phase shifter 234.

  Further, the number of ring resonators used is not limited to two, and the wavelength variable region can be further expanded by using an optical filter in which three or more ring resonators are optically connected.

(Example 3)
FIG. 6 is a block diagram showing an external resonator type laser light source according to Embodiment 3 of the present invention. The external resonator type laser light source of Example 3 in FIG. 6 is a laser light source that also has a light modulation function by the optical modulator 370, and specifically, is an output port of the laser light source of Example 2 in FIG. The first input port 371 and the second input port 372 of the optical modulator 370 are connected to the third port 153 of the first 2 × 2 optical coupler 150 and the third port 163 of the second 2 × 2 optical coupler 160. This is a laser light source having the configuration described above.

(Difference from Example 2 and its effect)
In the silicon photonics platform, it is possible to form and integrate an optical modulation unit capable of modulating the optical phase with an electric modulation signal of several tens of GHz on a Si optical waveguide chip. In the third embodiment shown in FIG. 6, a Mach-Zehnder type optical modulator is integrated as the optical modulator 370. By forming the optical modulator 370 in the same Si optical waveguide chip 40 as the external resonator part of the external resonator laser, compared to the case where the wavelength tunable laser and the optical modulator are formed by separate modules, more A small optical transmitter can be realized.

(Light modulator)
The optical modulator 370 of FIG. 6 is a Mach-Zehnder optical modulator in which the first input port 371 and the second input port 372 are connected to the laser light source output ports 153 and 163. Each arm of the Mach-Zehnder modulator includes first and second optical modulation units 373 and 374 and first and second phase shifters 375 and 376 which are optical phase adjustment units.

  In this configuration, it is assumed that the optical power coupling ratios of the first 2 × 2 optical coupler 150 and the second 2 × 2 optical coupler 160 are the same. In addition, the optical power input to the first input port 371 and the second input port 372 can be made substantially equal by designing the optical waveguide symmetrically with respect to the double ring filter 230. Furthermore, by using the phase shifter 380 to adjust the input phase to the Mach-Zehnder optical modulator, it is possible to input light without loss of principle.

  In the third embodiment shown in FIG. 6, the two input ports 371 and 372 of one Mach-Zehnder modulator are connected to the two output ports 153 and 163 of the external resonator laser. Any optical modulator formed on the substrate may be connected to any output port.

  In FIG. 6, the configuration in which a single Mach-Zehnder modulator is connected is described as the third embodiment. However, as shown in FIG. 7, an optical modulator configured using a plurality of Mach-Zehnder modulators is connected. Also good.

  In the third embodiment of FIG. 6, the configuration as a single polarization transmitter has been described. However, as shown in FIG. 7, two output ports (for example, port 153 and port 163) each have an optical modulator. It is also possible to configure a polarization multiplexed optical transmitter by connecting 391 and 392, connecting a polarization rotator 393 to the subsequent stage of one modulator 392, and rotating and multiplexing the polarization by 90 degrees. .

  At that time, a variable optical attenuator can be integrated for each polarization channel in order to correct the difference in output power between the polarizations. In FIG. 6, a BPSK (Binary phase-shift keying) modulator is integrated for each polarization, but other formats such as QPSK (Quadrature phase-shift keying) and 16QAM (Quadrature amplitude modulation) are supported. It is also possible to use an optical modulator.

(Example 4)
FIG. 8 is a block diagram showing an external resonator type laser light source according to Embodiment 4 of the present invention.

  The external resonator type laser light source of Example 4 has a wavelength adjustment mechanism in the first port 161 of the second 2 × 2 optical coupler which is one optical output port of the external resonator type laser light source of Example 2. This is a laser light source for an optical transceiver having a configuration including a wavelength locker 470.

(Difference from Example 2 and its effect)
In the configuration of the fourth embodiment, the laser oscillation wavelength can be precisely controlled by monitoring the oscillation wavelength of the laser light source using a wavelength locker and performing feedback control using a wavelength control mechanism.

(Wavelength locker)
Specifically, by using a wavelength control mechanism configured by the wavelength locker 470 of FIG. 8 and a control electronic circuit (not shown), the oscillation wavelength of the laser light source is monitored, and the internal cavity of the laser light source By controlling the power applied to the optical phase shifters 141, 142, 233, and 234 installed in, the oscillation wavelength can be precisely controlled.

(Advantages over using two external cavity lasers)
Here, it will be explained that the configuration of the fourth embodiment in FIG. 8 is superior to the case of securing equivalent optical output using two external resonator lasers as shown in FIG. 9 as a comparative example. .

  In an integrated coherent optical transmitter / receiver laser that integrates a light source, an optical modulator, and a light receiving circuit, light used as signal light in an optical transmission circuit of a transmitter and intradyne reception in a light receiving circuit of a receiver Two light sources to be used as light used as local light in the case of performing the above are required, and high output is required for the laser. Therefore, as shown in the comparative example of FIG. 9, it is assumed that two independent external resonator lasers are used, for example, the optical output of one external resonator laser is used as signal light and the remaining one is used as local light. Is done.

  At this time, each external cavity laser is independent, and two wavelength lockers are required in order to control the oscillation wavelength while having the same wavelength (471, 472). Furthermore, two wavelength control electronic circuits are required.

  On the other hand, in the configuration of the fourth embodiment shown in FIG. 8, since one external resonator laser is configured using two SOAs, only one mechanism for wavelength control is required, which is more than the case shown in FIG. The configuration can be simplified, and only one wavelength control electronic circuit is required, and the power required for control can be reduced.

  Here, if the light extraction efficiency in the coupler is the same, and the optical waveguide loss in the waveguide and the loss in the wavelength tunable filter 30 are ignored, the total optical output of the four output ports 151, 153, 161, and 163 in FIG. Is the same as the sum of the optical outputs of the two independent external cavity lasers in FIG. Therefore, by using this configuration, it can be said that an equivalent output can be obtained with a wavelength control configuration simpler than two independent external resonator lasers.

(Matters that expand the possibility of implementation)
In the fourth embodiment, the wavelength locker 470 is connected to the light output port 161 of the laser light source. However, it is obvious that the wavelength locker 470 may be connected to another light output port. In the fourth embodiment, the wavelength locker 470 is installed outside the Si optical waveguide chip 40. However, an equivalent function may be integrated in the Si optical waveguide chip 40.

  As described above, according to the present invention, in an external cavity laser that operates using two semiconductor optical amplifiers, the input power to the wavelength tunable filter is reduced, and stable oscillation wavelength control is achieved with high optical power output. Is possible.

10, 20 Semiconductor optical amplifier (SOA)
11, 12, 21, 22 End faces 13, 23 of a semiconductor optical amplifier (SOA) Optical spot size converter (SSC)
14, 24 Optical amplification unit 30 Wavelength tunable filters 31, 32, 33 Input / output ports of wavelength tunable filter 40 Si optical waveguide chip 41, 42 Si optical waveguide 50 2ch integrated semiconductor optical amplifier (SOA)
130 Ring resonator filter 131, 132 Ring resonator filter input / output ports 133, 141, 142, 233, 234, 380 Optical phase shifter 150, 160 2 × 2 optical coupler 151, 152, 153, 154, 161, 162, 163, 164
2 × 2 optical coupler first port to fourth port 230 Double ring filters 231 and 232 Double ring filter input / output ports 370, 391, 392 Optical modulator
371, 372 Optical modulator input ports 373, 374 Optical modulators 375, 376 Optical phase shifter 393 of optical modulator Polarization rotators 470, 471, 472 Wavelength locker 900 Si substrate 910 SiO ₂ film 920 Si wire waveguide 930 Heater 940 Electrode

Claims (7)

A first optical amplifier, a second optical amplifier,
A tunable filter that is formed in a single Si optical waveguide chip and optically connects the first optical amplifier and the second optical amplifier ;
The first optical amplifier and the second optical amplifier have substantially the same gain characteristics, and the end surfaces at both ends have the same configuration. The outer end surface of the first optical amplifier and the outer surface of the second optical amplifier An external resonator type laser light source in which a resonator is configured with an end face,
A first optical tap structure formed in the Si optical waveguide chip between the first optical amplifier and the wavelength tunable filter;
A second optical tap structure formed in the Si optical waveguide chip between the second optical amplifier and the tunable filter,
An external resonator type laser light source , wherein laser light is output from at least one of the optical output ports of the optical tap structure to reduce optical input power to the wavelength tunable filter . It said first optical amplifier and said second optical amplifier, single 2ch integrated external cavity laser source according to claim 1, characterized in that it is constituted by a semiconductor optical amplifier. 3. The external resonator type laser light source according to claim 1, wherein the tunable filter is a ring resonator filter having a phase shifter on a ring optical waveguide. It said tunable filter comprises two or more external cavity laser source according to any one of claims 1 to 3, characterized in that the ring resonator is an optical filter optically connected. Said first optical tap structure, the second optical tap structure, each external resonator according to any one of claims 1 to 4, characterized in that the 2 × 2 optical coupler having an arbitrary coupling efficiency Type laser light source. One of the optical output port of said second optical tap structure as the first optical tap structure, to any one of claims 1 to 5 wavelength locker is optically connected to characterized in that it constitutes a wavelength control mechanism The external resonator type laser light source described. Any said Si is formed on the optical waveguide chip of claim 1 to 5 input to the optical output port of the first optical tap structure and the second optical tap structure is characterized by having a connected optical modulators An external resonator type laser light source according to claim 1.

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