CN107994459A - Export the laser array of coherent laser - Google Patents
Export the laser array of coherent laser Download PDFInfo
- Publication number
- CN107994459A CN107994459A CN201711489418.3A CN201711489418A CN107994459A CN 107994459 A CN107994459 A CN 107994459A CN 201711489418 A CN201711489418 A CN 201711489418A CN 107994459 A CN107994459 A CN 107994459A
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- CN
- China
- Prior art keywords
- laser
- array
- seed
- optical
- waveguide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4006—Injection locking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Optical Couplings Of Light Guides (AREA)
- Semiconductor Lasers (AREA)
- Optical Communication System (AREA)
Abstract
Description
Claims (10)
- A kind of 1. laser array for exporting coherent laser, it is characterised in that including:Seed laser, optical waveguide structure, optics Aerial array, collimator lens array and vertical cavity surface emitting laser VCSEL array;The seed laser is used to provide seed light for the laser array;The optical waveguide structure includes first wave guide and second waveguide group, and the first wave guide is used for transmission seed light, and will kind Sub-light is coupled to each second waveguide in the second waveguide group;Optical antenna in the optical antenna array and the collimation lens in the collimator lens array, and with it is described The quantity of VCSEL units in VCSEL array is equal and corresponds;The optical antenna includes:Coupling unit, phase modulation unit and transmitter unit;The coupling unit, phase-modulation list Member and transmitter unit are sequentially connected;The coupling unit is used to obtain the seed light in a second waveguide, the phase-modulation list The phase that member is used for the seed light to getting is modulated, so that the seed light in the second waveguide group is through the optics day It is changed into the seed light that phase difference is definite value after linear array;The transmitter unit is used for the transmission side for changing modulated seed light To making optical axis direction of the transmission direction of modulated seed light along corresponding collimation lens;The collimation lens is used to connect Received seed light is collimated to corresponding VCSEL units;The VCSEL units are used to dock the seed light progress light amplification after received collimation, and launch amplified formation Laser.
- 2. laser array according to claim 1, it is characterised in that further include:Optical waveguide substrates;The fiber waveguide knot Structure, the collimator lens array and the VCSEL array are stacked gradually to the optical waveguide substrates.
- 3. laser array according to claim 2, it is characterised in that the optical axis of the collimation lens with it is corresponding The optical axis of VCSEL units is conllinear, and the luminous point of the optical antenna is on the optical axis of corresponding collimation lens.
- 4. laser array according to claim 2, it is characterised in that the collimation lens is planoconvex lens, the plano-convex The lower minute surface of mirror is plane, and the upper minute surface of the planoconvex lens is convex surface.
- 5. laser array according to claim 1, it is characterised in that each second waveguide is equal in the second waveguide group For L-type structure, the first side of the L-type structure is parallel with the first wave guide and contacts, the second side of the L-type structure with it is more Coupling unit in a optical antenna is parallel and contacts, and the second of the L-type structure is vertical while with described first.
- 6. laser array according to claim 5, it is characterised in that the transmitter unit is grating.
- 7. laser array according to claim 5, it is characterised in that first length of side of each L-type structure and the light The length for learning the coupling unit in antenna is adjustable.
- 8. according to the laser array any one of claim 1-7, it is characterised in that the definite value swashs for the seed The integral multiple for the seed optical wavelength that light device provides.
- 9. laser array according to claim 8, it is characterised in that the seed optical wavelength that the seed laser provides Scope is infrared band.
- 10. laser array according to claim 8, it is characterised in that the size of the optical waveguide structure and the light Seed optical wavelength of the size of antenna with seed laser offer is learned on the same order of magnitude.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201711489418.3A CN107994459B (en) | 2017-12-30 | 2017-12-30 | Export the laser array of coherent laser |
Applications Claiming Priority (1)
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CN201711489418.3A CN107994459B (en) | 2017-12-30 | 2017-12-30 | Export the laser array of coherent laser |
Publications (2)
Publication Number | Publication Date |
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CN107994459A true CN107994459A (en) | 2018-05-04 |
CN107994459B CN107994459B (en) | 2019-08-16 |
Family
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Family Applications (1)
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CN201711489418.3A Active CN107994459B (en) | 2017-12-30 | 2017-12-30 | Export the laser array of coherent laser |
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CN (1) | CN107994459B (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108680929A (en) * | 2018-07-18 | 2018-10-19 | 度亘激光技术(苏州)有限公司 | A kind of three-dimensional sensing system based on vertical cavity surface emitting laser arrays |
CN108767656A (en) * | 2018-06-01 | 2018-11-06 | 清华大学 | Coherent source component |
CN109343025A (en) * | 2018-08-14 | 2019-02-15 | 清华大学 | A kind of emission system of laser radar, detection system and detection method |
WO2020057856A1 (en) * | 2018-09-21 | 2020-03-26 | Osram Oled Gmbh | Phase-coupled laser assembly and method for producing a phase-coupled laser assembly |
CN114172023A (en) * | 2020-09-11 | 2022-03-11 | 朗美通经营有限责任公司 | Integrated flood and spot lighting |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002089272A1 (en) * | 2001-04-27 | 2002-11-07 | Photodigm | High-powered coherent arrays of vertical cavity surface-emitting semiconducting lasers |
CN102709808A (en) * | 2012-05-29 | 2012-10-03 | 中国科学院长春光学精密机械与物理研究所 | Coherent control array structure of micro lens integrated VCSELs (Vertical-Cavity Surface-Emitting Lasers) |
CN102714396A (en) * | 2010-01-29 | 2012-10-03 | 惠普发展公司,有限责任合伙企业 | Multimode vertical-cavity surface-emitting laser arrays |
US8615028B1 (en) * | 2010-10-12 | 2013-12-24 | Hrl Laboratories, Llc | Vertically integrated optical phased array with pseudo-random array architecture |
CN104393485A (en) * | 2014-09-26 | 2015-03-04 | 中国科学院长春光学精密机械与物理研究所 | Laser array coherent device and preparation method thereof |
CN106410607A (en) * | 2016-11-17 | 2017-02-15 | 清华大学 | Active optical phased array photon integration chip and manufacturing method thereof |
-
2017
- 2017-12-30 CN CN201711489418.3A patent/CN107994459B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002089272A1 (en) * | 2001-04-27 | 2002-11-07 | Photodigm | High-powered coherent arrays of vertical cavity surface-emitting semiconducting lasers |
CN102714396A (en) * | 2010-01-29 | 2012-10-03 | 惠普发展公司,有限责任合伙企业 | Multimode vertical-cavity surface-emitting laser arrays |
US8615028B1 (en) * | 2010-10-12 | 2013-12-24 | Hrl Laboratories, Llc | Vertically integrated optical phased array with pseudo-random array architecture |
CN102709808A (en) * | 2012-05-29 | 2012-10-03 | 中国科学院长春光学精密机械与物理研究所 | Coherent control array structure of micro lens integrated VCSELs (Vertical-Cavity Surface-Emitting Lasers) |
CN104393485A (en) * | 2014-09-26 | 2015-03-04 | 中国科学院长春光学精密机械与物理研究所 | Laser array coherent device and preparation method thereof |
CN106410607A (en) * | 2016-11-17 | 2017-02-15 | 清华大学 | Active optical phased array photon integration chip and manufacturing method thereof |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108767656A (en) * | 2018-06-01 | 2018-11-06 | 清华大学 | Coherent source component |
CN108680929A (en) * | 2018-07-18 | 2018-10-19 | 度亘激光技术(苏州)有限公司 | A kind of three-dimensional sensing system based on vertical cavity surface emitting laser arrays |
CN108680929B (en) * | 2018-07-18 | 2024-05-31 | 度亘激光技术(苏州)有限公司 | Three-dimensional sensing system based on vertical cavity surface emitting laser array |
CN109343025A (en) * | 2018-08-14 | 2019-02-15 | 清华大学 | A kind of emission system of laser radar, detection system and detection method |
CN109343025B (en) * | 2018-08-14 | 2023-06-27 | 清华大学 | Laser radar transmitting system, laser radar detecting system and laser radar detecting method |
WO2020057856A1 (en) * | 2018-09-21 | 2020-03-26 | Osram Oled Gmbh | Phase-coupled laser assembly and method for producing a phase-coupled laser assembly |
DE102018123320A1 (en) * | 2018-09-21 | 2020-03-26 | Osram Opto Semiconductors Gmbh | Phase-coupled laser arrangement and method for producing a phase-coupled laser arrangement |
DE102018123320B4 (en) | 2018-09-21 | 2023-01-26 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Phase-locked laser assembly and method of manufacturing a phase-locked laser assembly |
US11923656B2 (en) | 2018-09-21 | 2024-03-05 | Osram Oled Gmbh | Phase-coupled laser assembly and method for producing a phase-coupled laser assembly |
CN114172023A (en) * | 2020-09-11 | 2022-03-11 | 朗美通经营有限责任公司 | Integrated flood and spot lighting |
CN114172023B (en) * | 2020-09-11 | 2024-04-09 | 朗美通经营有限责任公司 | Integrated floodlight and spot illuminator |
Also Published As
Publication number | Publication date |
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Effective date of registration: 20211011 Address after: No. 100, Pingyuan Park, Chaoyang District, Beijing 100022 Patentee after: Beijing University of Technology Patentee after: Cao Yinhua Patentee after: Wang Zhiyong Address before: No. 100, Pingyuan Park, Chaoyang District, Beijing 100022 Patentee before: Beijing University of Technology |
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Effective date of registration: 20211130 Address after: 101111 buildings 28 and 29, No. 1 courtyard, Jinghai fifth road, economic and Technological Development Zone, Daxing District, Beijing Patentee after: Beijing Yaxin Photoelectric Technology Co.,Ltd. Address before: 100022 No. 100 Chaoyang District Ping Tian Park, Beijing Patentee before: Beijing University of Technology Patentee before: Cao Yinhua Patentee before: Wang Zhiyong |