CN104332825A - Asymmetric inverse waveguide large optical cavity semiconductor laser structure - Google Patents
Asymmetric inverse waveguide large optical cavity semiconductor laser structure Download PDFInfo
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- CN104332825A CN104332825A CN201410674431.6A CN201410674431A CN104332825A CN 104332825 A CN104332825 A CN 104332825A CN 201410674431 A CN201410674431 A CN 201410674431A CN 104332825 A CN104332825 A CN 104332825A
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Abstract
The invention discloses an asymmetric inverse waveguide large optical cavity semiconductor laser structure, belonging to the technical field of semiconductor photo-electronic devices. Electro-optic efficiency and output power of the laser are limited as the known technology in the field is difficult to reduce series resistance and carrier leakage while reducing optical limiting factors of a laser waveguide, increasing effective waveguide width and reducing waveguide loss. The waveguide layer of the asymmetric inverse waveguide large optical cavity semiconductor laser adopts an asymmetric inverse linear graduated refractive index structure, so that the optical limiting factor of the laser waveguide is decreased efficiently, effective waveguide width is increased, carrier absorption loss and series resistance of the waveguide are reduced, and meanwhile the leakage of quantum well carriers is avoided. The technical scheme can be applied to manufacturing of various types of high-power semiconductor lasers.
Description
Technical field
The present invention relates to a kind of asymmetric inverse wave-guide large optical cavity semiconductor laser device structure, belong to laser technology field.
Background technology
Asymmetric large optical cavity semiconductor laser device has the advantage that duct width is large, waveguide absorption is little, be the exemplary epitaxial structure mode improving high power semiconductor lasers, be conducive to reducing the power density in laser waveguide district, improving the peak power output level of semiconductor laser.Existing asymmetric large optical cavity semiconductor laser device, its waveguiding structure mainly adopts the uniform refractive index distribution structure of each layer, the increase of effective duct width is restricted, and its effective duct width increases the main increase of lower waveguide layer thickness and the refractive index of relying on and improves.Increasing waveguide layer thickness causes laser series resistance to increase, and improves the Carrier Leakage that ducting layer refractive index then adds laser quantum well region, all affects the raising of laser performance.
Summary of the invention
The present invention is achieved in that and sees shown in accompanying drawing, and asymmetric inverse wave-guide large optical cavity semiconductor laser device structure comprises substrate 1, lower limit layer 2, lower waveguide layer 3, multiple quantum well active layer 4, upper ducting layer 5, upper limiting layer 6 and ohmic contact layer 7.The material component of lower waveguide layer 3 is reverse linear gradual change, and the Refractive Index of Material near the lower waveguide layer 3 of multiple quantum well active layer 4 is low, and the Refractive Index of Material near the lower waveguide layer 3 of lower limit layer 2 is high.Lower waveguide layer 3 is N-type doped region, and upper ducting layer 5 is P type doped region.
Technique effect of the present invention is, the duct width of N-type doped region is effectively increased by the material component reverse linear gradual change of lower waveguide layer 3, light field in ducting layer 5 and multiple quantum well active layer 4 is weakened, suppress on ducting layer 5 carrier absorption loss while, keep lower waveguide layer 3 and the barrier height at multiple quantum well active layer 4 interface, avoid the Carrier Leakage in multiple quantum well active layer 4.Meanwhile, keep the thickness of lower waveguide layer 3 substantially constant, the series resistance properties deteriorate of laser can not be caused.
Accompanying drawing explanation
Appended Fig. 1 is asymmetric inverse wave-guide large optical cavity semiconductor laser device structural representation, and 1 is substrate, and 2 is lower limit layer, and 3 is lower waveguide layer, and 4 is multiple quantum well active layer, and 5 is upper ducting layer, and 6 is upper limiting layer, and 7 is ohmic contact layer.
Embodiment
As shown in Figure 1, a kind of asymmetric inverse wave-guide large optical cavity semiconductor laser device epitaxial structure comprises substrate 1, lower limit layer 2, lower waveguide layer 3, multiple quantum well active layer 4, upper ducting layer 5, upper limiting layer 6 and ohmic contact layer 7.The substrate that substrate 1 grows for laser epitaxial; The material component of upper limiting layer 6 and lower limit layer 2 is even, and its Main Function is the some optical confinement of laser waveguide; The material component of upper ducting layer 5 is even, and thickness is 0.1-0.3 micron, is P type doped region, mainly provides light field waveguide and the charge carrier potential barrier of laser p type island region; The material component of lower waveguide layer 3 is reverse linear gradual change, thickness is 0.1-0.8 micron, Refractive Index of Material near the lower waveguide layer 3 of multiple quantum well active layer 4 is low, and the Refractive Index of Material near the lower waveguide layer 3 of lower limit layer 2 is high, mainly provides light field waveguide and the charge carrier potential barrier of laser N-type region; Multiple quantum well active layer 4 is laser luminous zone, and material component is even, according to the threshold value of laser, quantum well quantity is 1 ~ 4, the thickness of single quantum well is 5 ~ 12 nanometers, and multiple quantum well active layer can optimize the threshold current level of laser, makes laser have lower lasing threshold.
Below in conjunction with example, the present invention is described, substrate 1 is (100) orientation, Si doping content 1 ~ 2 × 10
18cm
-3gaAs crystalline material; Lower limit layer 2 is thickness 0.8 micron, Si doping content 1 × 10
18cm
-3n-type Al
0.35ga
0.65as; Lower waveguide layer 3 is thickness 0.6 micron, Si-0.5 × 10
18cm
-3low-doped linear gradient component Al
0.18 ~ 0.25ga
0.82 ~ 0.75as, Al, Ga constituent content linear gradient, make this ducting layer have reverse linear graded index structure; Multiple quantum well active layer 4 comprises 2 Al that thickness in monolayer is 8 nanometers
0.07ga
0.93as quantum well and adjacent with quantum well 3 thickness are the Al of 12 nanometers
0.25ga
0.75as barrier layer; Upper ducting layer 5 is thickness 0.15 micron, Zn-0.5 × 10
18cm
-3low-doped Al
0.35-0.19ga
0.65-0.81as; Upper limiting layer 6 is thickness 0.6 micron, Zn doping content 1 × 10
18cm
-3p type Al
0.45ga
0.55as; Ohmic contact layer 7 is thickness 0.1 micron, Zn doping content 2 × 10
19cm
-3p type GaAs.The duct width of said structure laser is obviously increased, and vertical divergence angle is below 35 degree, and waveguide loss reduces, and adopts the threshold current density of the 808nm long wavelength laser material of MOCVD epitaxy growth at 300A/cm
2below, laser sloep efficiency efficiency is greater than 1.2W/A, and electrical efficiency is greater than 55%.
Claims (1)
1. an asymmetric inverse wave-guide large optical cavity semiconductor laser device structure, comprise substrate (1), lower limit layer (2), lower waveguide layer (3), multiple quantum well active layer (4), upper ducting layer (5), upper limiting layer (6) and ohmic contact layer (7), it is characterized in that, the material component of lower waveguide layer (3) is reverse linear gradual change, Refractive Index of Material near the lower waveguide layer (3) of multiple quantum well active layer (4) is low, and the Refractive Index of Material near the lower waveguide layer (3) of lower limit layer (2) is high; Lower waveguide layer (3) is N-type doped region, upper ducting layer (5) is P type doped region, the duct width of N-type doped region is effectively increased, the carrier absorption loss of ducting layer in suppression by the material component reverse linear gradual change of lower waveguide layer (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410674431.6A CN104332825A (en) | 2014-11-20 | 2014-11-20 | Asymmetric inverse waveguide large optical cavity semiconductor laser structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410674431.6A CN104332825A (en) | 2014-11-20 | 2014-11-20 | Asymmetric inverse waveguide large optical cavity semiconductor laser structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104332825A true CN104332825A (en) | 2015-02-04 |
Family
ID=52407505
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| CN201410674431.6A Pending CN104332825A (en) | 2014-11-20 | 2014-11-20 | Asymmetric inverse waveguide large optical cavity semiconductor laser structure |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107069429A (en) * | 2017-07-05 | 2017-08-18 | 长春理工大学 | A kind of composite waveguide epitaxial structure based on semiconductor laser |
| CN107579431A (en) * | 2017-10-23 | 2018-01-12 | 海南师范大学 | A kind of M types tapered waveguide semiconductor laser structure |
| DE102016122147A1 (en) * | 2016-11-17 | 2018-05-17 | Osram Opto Semiconductors Gmbh | Semiconductor laser |
| CN108767656A (en) * | 2018-06-01 | 2018-11-06 | 清华大学 | Coherent source component |
| CN109193344A (en) * | 2018-10-30 | 2019-01-11 | 中国工程物理研究院应用电子学研究所 | A kind of semiconductor laser and its manufacturing method with anti-ducting layer structure |
| CN111108657A (en) * | 2017-06-30 | 2020-05-05 | 奥卢大学 | Optical semiconductor device and manufacturing method thereof |
| CN112398002A (en) * | 2019-08-16 | 2021-02-23 | 山东华光光电子股份有限公司 | Low-power laser based on gradient waveguide layer and preparation method thereof |
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2014
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| CN101820136A (en) * | 2010-04-21 | 2010-09-01 | 中国科学院半导体研究所 | Asymmetrical 980nm semiconductor laser structure with high power and wide waveguide |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102016122147A1 (en) * | 2016-11-17 | 2018-05-17 | Osram Opto Semiconductors Gmbh | Semiconductor laser |
| CN109964375A (en) * | 2016-11-17 | 2019-07-02 | 欧司朗光电半导体有限公司 | Semiconductor laser |
| US10826276B2 (en) | 2016-11-17 | 2020-11-03 | Osram Oled Gmbh | Semiconductor laser |
| DE102016122147B4 (en) | 2016-11-17 | 2022-06-23 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | semiconductor laser |
| CN109964375B (en) * | 2016-11-17 | 2023-02-28 | 欧司朗光电半导体有限公司 | Semiconductor laser device |
| CN111108657A (en) * | 2017-06-30 | 2020-05-05 | 奥卢大学 | Optical semiconductor device and manufacturing method thereof |
| CN107069429A (en) * | 2017-07-05 | 2017-08-18 | 长春理工大学 | A kind of composite waveguide epitaxial structure based on semiconductor laser |
| CN107579431A (en) * | 2017-10-23 | 2018-01-12 | 海南师范大学 | A kind of M types tapered waveguide semiconductor laser structure |
| CN108767656A (en) * | 2018-06-01 | 2018-11-06 | 清华大学 | Coherent source component |
| CN109193344A (en) * | 2018-10-30 | 2019-01-11 | 中国工程物理研究院应用电子学研究所 | A kind of semiconductor laser and its manufacturing method with anti-ducting layer structure |
| CN112398002A (en) * | 2019-08-16 | 2021-02-23 | 山东华光光电子股份有限公司 | Low-power laser based on gradient waveguide layer and preparation method thereof |
| CN112398002B (en) * | 2019-08-16 | 2021-10-01 | 山东华光光电子股份有限公司 | Low-power laser based on gradient waveguide layer and preparation method thereof |
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Application publication date: 20150204 |