CN116565693A - Semiconductor laser element with strain polarity topological layer - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- 229910002367 SrTiO Inorganic materials 0.000 claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 230000000903 blocking effect Effects 0.000 claims description 19
- 230000004888 barrier function Effects 0.000 claims description 14
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- 239000002131 composite material Substances 0.000 claims description 11
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- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 229910004205 SiNX Inorganic materials 0.000 claims description 4
- 229910010093 LiAlO Inorganic materials 0.000 claims description 2
- 229910020068 MgAl Inorganic materials 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910052596 spinel Inorganic materials 0.000 claims description 2
- 239000011029 spinel Substances 0.000 claims description 2
- 229910052582 BN Inorganic materials 0.000 claims 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 20
- 230000000694 effects Effects 0.000 abstract description 7
- 238000002347 injection Methods 0.000 abstract description 5
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- 229910002704 AlGaN Inorganic materials 0.000 description 4
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- 150000004767 nitrides Chemical class 0.000 description 4
- 239000000370 acceptor Substances 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
- H01S5/3404—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation influencing the polarisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
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Abstract
The invention relates to the technical field of semiconductor devices, in particular to a semiconductor laser element with a strain polarity topological layer. Strain polarity topological layers are arranged between the upper limiting layer and the upper waveguide layer and between the lower limiting layer and the lower waveguide layer of the laser element; the layer is SrZnSO, pbTiO 3 、Ta 2 PdS 5 、CdPS 3 、SrTiO 3 The hBN has more than one three-dimensional high-order topological superlattice structure; the strain polarity topological layer generates polarity reverse vortex and polarity topological characteristics, reduces polarization effect of an active layer, improves carrier injection uniformity, enhances tunable second harmonic and nonlinear optical properties, enables laser to propagate along the direction of the active layer, prevents light from leaking to a substrate, inhibits a substrate mode, improves far-field image quality, limits an internal light field between an upper waveguide layer and a lower waveguide layer more, reduces optical loss, improves mode gain of a laser, and enhances a limiting factor and gain uniformityThe excitation threshold of the laser element is reduced, and the optical power and slope efficiency of the laser element are improved.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectric devices, in particular to a semiconductor laser element with a strain polarity topological layer.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The laser has various types and various classification modes, and mainly comprises solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like.
The laser is greatly different from the nitride semiconductor light-emitting diode, 1) the laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level; 2) The current density of the laser reaches KA/cm2, which is more than 2 orders of magnitude higher than that of the nitride light-emitting diode, so that stronger electron leakage, more serious Auger recombination, stronger polarization effect and more serious electron-hole mismatch are caused, and more serious efficiency attenuation drop effect is caused; 3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated; 4) The principle is different: the light emitting diode generates radiation composite luminescence by electron hole transition to a quantum well or a p-n junction under the action of external voltage, and the laser can perform lasing under the condition that the lasing condition is satisfied, the inversion distribution of carriers in an active area is required to be satisfied, stimulated radiation light oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss by satisfying a threshold condition, and finally laser is output.
The nitride semiconductor laser has the following problems: 1) The internal lattice mismatch is large, the strain is large, the polarization effect is strong, and the QCSE quantum confinement Stark effect is strong, so that the improvement of the electric lasing gain of the laser is limited; 2) The absorption loss of the optical waveguide is high, inherent carbon impurities compensate acceptors in a p-type semiconductor, damage p-type and the like, the ionization rate of p-type doping is low, a large amount of unionized Mg acceptors impurities can cause the increase of internal optical loss, the refractive index dispersion of the laser is reduced along with the increase of wavelength, and the mode gain of the laser is reduced; 3) The thickness of the lower limiting layer is increased, so that the refractive index of the limiting layer can be reduced, but the thickness of the lower limiting layer is increased, so that the component regulation range is limited, and the problems of cracking, bending, quality reduction and the like are easily caused; meanwhile, leakage of the optical field mode to the substrate to form standing waves can lead to low substrate mode suppression efficiency and poor FFP quality of far-field images. 4) The p-type semiconductor has the advantages of large Mg acceptor activation energy and low ionization efficiency, the hole concentration is far lower than the electron concentration, the hole mobility is far lower than the electron mobility, the serious asymmetry mismatch of electron holes in a quantum well, electron leakage and carrier delocalization are caused, the hole transportation in the quantum well is more difficult, the carrier injection is uneven, the gain spectrum of the laser is widened, and the peak gain is reduced. 5) The valence band step of the laser is increased, the hole is more difficult to transport in the quantum well, the carrier injection is uneven, and the gain is uneven.
Disclosure of Invention
One of the objects of the present invention is to provide a semiconductor laser device having a strained polar topology layer that generates polar anti-vortex and polar topology characteristics, reduces polarization effects of an active layer, improves carrier injection uniformity, and enhances tunable second harmonic and nonlinear optical properties, allowing laser light to propagate along the active layer, preventing light leakage to a substrate, suppressing substrate modes, improving far-field image quality, improving beam quality factors, confining an internal optical field more between an upper waveguide layer and a lower waveguide layer, reducing optical loss, improving mode gain of a laser, enhancing confinement factor and gain uniformity, reducing an excitation threshold of the laser device, and improving optical power and slope efficiency of the laser device.
In order to achieve the above purpose, the present invention adopts the following technical scheme: the semiconductor laser element structurally comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electronic blocking layer and an upper limiting layer from bottom to top in sequence, wherein a first strain polarity topological layer is arranged between the lower limiting layer and the lower waveguide layer, a second strain polarity topological layer is arranged between the upper waveguide layer and the electronic blocking layer, and the first strain polarity topological layer and the second strain polarity topological layer are the same or different and are SrZnSO and PbTiO 3 、Ta 2 PdS 5 、CdPS 3 、SrTiO 3 Three-dimensional high-order topological superlattice structures in hBN.
Further improvements as semiconductor laser elements with strained polar topology layers:
preferably, the substrate is sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiNx, sapphire/SiO 2 SiNx composite substrate and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
Preferably, the lower limiting layer is one or more than two of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, has a thickness of 50-5000nm and a Si doping concentration of 1E18-1E20cm -3 。
Preferably, the lower waveguide layer and the upper waveguide layer are any one or more than two of GaN, inGaN, alInGaN, the thickness is 50-1000nm, and the Si doping concentration is 1E16-5E19 cm -3 。
Preferably, the active layer is a periodic structure consisting of a well layer and a barrier layer, the period number is 3-m-1, the well layer is any one or the combination of more than two of InGaN, inN, alInN, gaN, the thickness is 10-80A m, the barrier layer is any one or the combination of more than two of GaN, alGaN, alInGaN, alN, alInN, and the thickness is 10-120A m.
Preferably, the electron blocking layer and the upper limiting layer are any one or more than two of GaN, alGaN, alInGaN, alN, alInN, the thickness is 20-1000nm, and the doping concentration of Mg is 1E18-1E20cm -3 。
Preferably, the thicknesses of the first strain polarity topological layer and the second strain polarity topological layer are 5-500nm.
Preferably, the first strained polar topological layer and the second strained polar topological layer are three-dimensional high-order topological superlattice structures formed by binary combination of: srZnSO/PbTiO 3 ，SrZnSO/Ta 2 PdS 5 ，SrZnSO/CdPS 3 ，SrZnSO/SrTiO 3 ，SrZnSO/hBN，PbTiO 3 /Ta 2 PdS 5 ，PbTiO 3 /CdPS 3 ，PbTiO 3 /SrTiO 3 ，PbTiO 3 /hBN，Ta 2 PdS 5 /CdPS 3 ，Ta 2 PdS 5 /SrTiO 3 ，Ta 2 PdS 5 /hBN，CdPS 3 /SrTiO 3 ，CdPS 3 /hBN，SrTiO 3 /hBN。
Preferably, the first strained polar topological layer and the second strained polar topological layer are three-dimensional high-order topological superlattice structures formed by the following ternary combination: srZnSO/PbTiO 3 /Ta 2 PdS 5 ，SrZnSO/PbTiO 3 /CdPS 3 ，SrZnSO/PbTiO 3 /SrTiO 3 ，SrZnSO/PbTiO 3 /hBN，SrZnSO/Ta 2 PdS 5 /CdPS 3 ，SrZnSO/Ta 2 PdS 5 /SrTiO 3 ，SrZnSO/Ta 2 PdS 5 /hBN，SrZnSO/CdPS 3 /SrTiO 3 ，SrZnSO/CdPS 3 /hBN，SrZnSO/SrTiO 3 /hBN，PbTiO 3 /Ta 2 PdS 5 /CdPS 3 ，PbTiO 3 /Ta 2 PdS 5 /SrTiO 3 ，PbTiO 3 /Ta 2 PdS 5 /hBN，PbTiO 3 /CdPS 3 /SrTiO 3 ，PbTiO 3 /CdPS 3 /hBN，PbTiO 3 /SrTiO 3 /hBN，Ta 2 PdS 5 /CdPS 3 /SrTiO 3 ，Ta 2 PdS 5 /CdPS 3 /hBN，Ta 2 PdS 5 /SrTiO 3 /hBN，CdPS 3 /SrTiO 3 /hBN。
Preferably, the first strained polar topological layer and the second strained polar topological layer are three-dimensional high-order topological superlattice structures formed by the following quaternary combinations or five-element combinations or six-element combinations: srZnSO/PbTiO 3 /Ta 2 PdS 5 /CdPS 3 ，SrZnSO/PbTiO 3 /Ta 2 PdS 5 /SrTiO 3 ，SrZnSO/PbTiO 3 /Ta 2 PdS 5 /hBN，SrZnSO/Ta 2 PdS 5 /CdPS 3 /SrTiO 3 ，SrZnSO/Ta 2 PdS 5 /CdPS 3 /hBN，SrZnSO/CdPS 3 /SrTiO 3 /hBN，PbTiO 3 /Ta 2 PdS 5 /CdPS 3 /SrTiO 3 ，PbTiO 3 /Ta 2 PdS 5 /CdPS 3 /hBN，PbTiO 3 /CdPS 3 /SrTiO 3 /hBN，Ta 2 PdS 5 /CdPS 3 /SrTiO 3 /hBN，SrZnSO/PbTiO 3 /Ta 2 PdS 5 /CdPS 3 /SrTiO 3 ，SrZnSO/PbTiO 3 /Ta 2 PdS 5 /CdPS 3 /hBN，SrZnSO/PbTiO 3 /Ta 2 PdS 5 /SrTiO 3 /hBN，SrZnSO/PbTiO 3 /CdPS 3 /SrTiO 3 /hBN，SrZnSO/Ta 2 PdS 5 /CdPS 3 /SrTiO 3 /hBN，PbTiO 3 /Ta 2 PdS 5 /CdPS 3 /SrTiO 3 /hBN，SrZnSO/PbTiO 3 /Ta 2 PdS 5 /CdPS 3 /SrTiO 3 /hBN。
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a semiconductor laser element with a strain polarity topological layer, wherein a first strain polarity topological layer is arranged between a lower limiting layer and a lower waveguide layer, and a second strain polarity topological layer is arranged between an upper waveguide layer and an electron blocking layer; the strain polarity topological layer generates polarity reverse vortex and polarity topological characteristics, so that the polarization effect of the active layer is reduced, the carrier injection uniformity is improved, the mode gain and gain uniformity of the laser are improved, the excitation threshold of the laser element is reduced, and the optical power and slope efficiency of the laser element are improved; the strain polarity topology layer can enhance tunable second harmonic and nonlinear optical properties, enables laser to propagate along the direction of the active layer, prevents light from leaking to the substrate, inhibits a substrate mode, improves far-field image quality, improves beam quality factors, limits an internal optical field between the upper waveguide layer and the lower waveguide layer more, reduces optical loss, and enhances limiting factors.
Drawings
FIG. 1 is a schematic diagram of a semiconductor laser device with a strained polar topology layer according to an embodiment of the present invention;
reference numerals: 100. a substrate; 101. a lower confinement layer; 102. a lower waveguide layer; 103. an active layer; 104. an upper waveguide layer; 105. an electron blocking layer; 106. an upper confinement layer; 1071. a first strained polar topology layer; 1072. a second strained polar topology layer.
Detailed Description
The present invention will be further described in detail with reference to the following examples, in order to make the objects, technical solutions and advantages of the present invention more apparent, and all other examples obtained by those skilled in the art without making any inventive effort are within the scope of the present invention based on the examples in the present invention.
Comparative example 1
The present embodiment provides a conventional laser element, which structurally includes, in order from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106; specific:
the substrate 100 is a GaN substrate;
the lower confinement layer 101 is AlGaN, the thickness is 100nm, and the doping concentration of Si is 1E18cm -3 ；
The lower waveguide layer 102 is GaN with a thickness of 100nm and a Si doping concentration of 1E18cm -3 ；
The active layer 103 is a periodic structure composed of a well layer and a barrier layer, the well layer is an InGaN well layer, the thickness is 10 Emeter, the barrier layer is GaN, the thickness is 10 Emeter, and the cycle number m is 3;
the upper waveguide layer 104 is InGaN with thickness of 100nm and Si doping concentration of 1E18cm -3 ；
The electron blocking layer 105 is AlGaN, the thickness is 100nm, and the doping concentration of Mg is 1E19cm -3 。
The upper confinement layer 106 is AlInGaN, has a thickness of 100nm, and a doping concentration of 1E19cm -3 。
Example 1
The present embodiment provides a semiconductor laser element 1 having a strained polar topology layer, the structure of which is shown in fig. 1, and the specific structure of which is referred to comparative example 1, except that:
a first strain polarity topology layer 1071 is arranged between the lower confinement layer 101 and the lower waveguide layer 102, and the first strain polarity topology layer 1071 is PbTiO 3 /Ta 2 PdS 5 The thickness of the three-dimensional high-order topological superlattice structure of the binary combination is 100nm;
a second strain polarity topology layer 1072 is arranged between the upper waveguide layer 104 and the electron blocking layer 105, and the second strain polarity topology layer 1072 is PbTiO 3 /SrTiO 3 The three-dimensional high-order topological superlattice structure of binary combination has the thickness of 100nm.
Example 2
The present embodiment provides a semiconductor laser device 3 with a strained polar topology layer, the structure of which is shown in fig. 1, and includes, in order from bottom to top, a substrate 100, a lower confinement layer 101, a first strained polar topology layer 1071, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, a second strained polar topology layer 1072, an electron blocking layer 105, and an upper confinement layer 106; specific:
the substrate 100 is a sapphire/AlN composite substrate;
the lower confinement layer 101 is composed of GaN and AlGaN, and has a thickness of 50nm and a Si doping concentration of 1E19cm -3 ；
The first strained polar topology layer 1071 is SrZnSO/PbTiO 3 /SrTiO 3 Three-dimensional high-order topological superlattice structure formed by ternary combination has thickness of 50nm;
the lower waveguide layer 102 is InGaN with a thickness of 50nm and a Si doping concentration of 1E16 cm -3 ；
The active layer 103 is a periodic structure formed by a well layer and a barrier layer, the well layer is an InGaN well layer, and the thickness is 80 Emeter; the barrier layer is AlInGaN, the thickness is 120 Emi, and the cycle number m is 4;
the upper waveguide layer 104 is AlInGaN, has a thickness of 50nm and a Si doping concentration of 1E16 cm -3 ；
The second strained polar topology layer 1072 is PbTiO 3 /CdPS 3 /SrTiO 3 Three-dimensional high-order topological superlattice structure formed by ternary combination has thickness of 500nm;
the electron blocking layer 105 is AlInGaN, the thickness is 20nm, and the doping concentration of Mg is 1E18cm -3 ；
The upper confinement layer 106 is composed of AlGaN and InGaN, and has a thickness of 50nm and a doping concentration of 1E19cm -3 。
Example 3
The present embodiment provides a semiconductor laser device 3 with a strained polar topology layer, the structure of which is shown in fig. 1, and includes, in order from bottom to top, a substrate 100, a lower confinement layer 101, a first strained polar topology layer 1071, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, a second strained polar topology layer 1072, an electron blocking layer 105, and an upper confinement layer 106; specific:
the substrate 100 is a GaN substrate;
the lower limiting layer 101 is a combination of InGaN, alInGaN, has a thickness of 5000nm and a Si doping concentration of 1E19cm -3 ；
The first strained polar topology layer 1071 is SrZnSO/PbTiO 3 /Ta 2 PdS 5 /SrTiO 3 The thickness of the quaternary combined three-dimensional high-order topological superlattice structure is 100nm;
the lower waveguide layer 102 is AlInGaN with thickness of 1000nm and Si doping concentration of 1E19cm -3 ；
The active layer 103 is a periodic structure composed of a well layer and a barrier layer, the well layer is an InGaN well layer, the thickness is 30 Emeter, the barrier layer is a combination of GaN and AlInGaN, the thickness is 50 Emeter, and the cycle number m is 1;
the upper waveguide layer 104 is composed of GaN and InGaN, and has a thickness of 1000nm and a Si doping concentration of 1E19cm -3 ；
The second strained polar topology layer 1072 is SrZnSO/PbTiO 3 /Ta 2 PdS 5 /SrTiO 3 The three-dimensional high-order topological superlattice structure formed by quaternary combination has the thickness of 400nm;
the electron blocking layer 105 is composed of AlInGaN and AlN, and has a thickness of 1000nm and a doping concentration of 1E20cm -3 ；
The upper limiting layer 106 is a combination of AlN and InN, the thickness is 5000nm, and the doping concentration of Mg is 1E19cm -3 。
Example 4
The present embodiment provides a semiconductor laser device 4 with a strained polar topology layer, the structure of which is shown in fig. 1, and includes, in order from bottom to top, a substrate 100, a lower confinement layer 101, a first strained polar topology layer 1071, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, a second strained polar topology layer 1072, and an upper confinement layer 106; specific:
the substrate 100 is sapphire/SiO 2 A composite substrate;
the lower limiting layer 101 is a combination of GaN, alGaN, inGaN, has a thickness of 1000nm and a Si doping concentration of 1E18cm -3 ；
The first and second strained polar topology layers 1071 and 1072 are the same and are PbTiO 3 /CdPS 3 The thickness of the heterojunction structure of the hBN ternary combination is 300nm;
the lower waveguide layer 102GaN, inGaN, alInGaN, 500nm thick, si doping concentration of 1E17 cm -3 ；
The active layer 103 is a periodic structure formed by a well layer and a barrier layer, the well layer is an InGaN well layer, the thickness is 50 Emi, the barrier layer is a combination of GaN and AlInN, the thickness is 50 Emi, and the cycle number m is 2;
the upper waveguide layer 104 is GaN, has a thickness of 500nm and a Si doping concentration of 1E17 cm -3 ；
The electron blocking layer 105 is a combination of AlN and AlInN, the thickness is 500nm, and the doping concentration of Mg is 1E19cm -3 ；
The upper confinement layer 106 is a combination of AlN, inN, alInN, has a thickness of 1000nm and a Mg doping concentration of 1E19cm -3 。
Example 5
The present embodiment provides a semiconductor laser device 5 with a strained polar topology layer, the structure of which is shown in fig. 1, and includes, in order from bottom to top, a substrate 100, a lower confinement layer 101, a first strained polar topology layer 1071, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, a second strained polar topology layer 1072, an electron blocking layer 105, and an upper confinement layer 106; specific:
the substrate 100 is a GaAs substrate;
the lower limiting layer 101 is a combination of InGaN, alInGaN, alN, 500nm in thickness and 1E18cm in Si doping concentration -3 ；
The first strained polar topology layer 1071 is SrZnSO/PbTiO 3 /Ta 2 PdS 5 /CdPS 3 /SrTiO 3 Five-membered combined three-dimensional high-order topological superlattice structure with thickness of 100nm;
the lower waveguide layer 102 is a combination of GaN and AlInGaN, has a thickness of 700nm and a Si doping concentration of 1E18cm -3 ；
The active layer 103 is a periodic structure formed by a well layer and a barrier layer, the well layer is an InGaN well layer, the thickness is 50 Emi, the barrier layer is a GaN, alGaN, alInN combination, the thickness is 70 Emi, and the cycle number m is 3;
the upper waveguide layer 104 is composed of GaN and AlInGaN, and has a thickness of 700nm, siDoping concentration of 1E18cm -3 ；
The second strained polar topology layer 1072 is
SrZnSO/PbTiO 3 /Ta 2 PdS 5 /CdPS 3 /SrTiO 3 The superlattice structure of the hBN six-element combination is 100nm thick;
the electron blocking layer 105 is a combination of AlInGaN, alN, alInN, has a thickness of 600nm and a Mg doping concentration of 1E19cm -3 ；
The upper confinement layer 106 is a combination of InGaN, alN, alInN, has a thickness of 500nm and a Mg doping concentration of 1E19cm -3 。
The performance test was conducted on the semiconductor laser element in the above comparative example, and the semiconductor laser elements having the strained polar topology layer in examples 1 to 6, and the results are shown in table 1 below:
table 1 data of performance test of semiconductor laser elements in comparative examples and examples 1 to 6
As can be seen from table 1, compared with the conventional laser element, the beam quality factor of the semiconductor laser element with the strained polar topological layer of the present invention is reduced by 45% or more, the slope efficiency is improved by 60% or more, the threshold current density is reduced by 70% or more, the optical power is improved by 50% or more, the confinement factor is improved by 40% or more, and the internal optical loss is reduced by 60% or more. The strain polarity topological layer of the semiconductor laser element generates polarity anti-vortex and polarity topological characteristics, and enhances tunable second harmonic and nonlinear optical properties, so that laser propagates along the direction of an active layer, light leakage is prevented, an internal light field is limited between an upper waveguide layer and a lower waveguide layer more, optical loss is reduced, a limiting factor is enhanced, the excitation threshold of the laser element is reduced, and the optical power and slope efficiency of the laser element are improved.
Those skilled in the art will appreciate that the foregoing is merely a few, but not all, embodiments of the invention. It should be noted that many variations and modifications can be made by those skilled in the art, and all variations and modifications which do not depart from the scope of the invention as defined in the appended claims are intended to be protected.
Claims (10)
1. The semiconductor laser element with the strain polarity topological layer structurally comprises a substrate (100), a lower limiting layer (101) and a lower waveguide layer (102) from bottom to top, an active layer (103), an upper waveguide layer (104), an electron blocking layer (105) and an upper limiting layer (106), and is characterized in that: a first strain polarity topology layer (1071) is arranged between the lower limiting layer (101) and the lower waveguide layer (102), a second strain polarity topology layer (1072) is arranged between the upper waveguide layer (104) and the electron blocking layer (105), and the first strain polarity topology layer (1071) and the second strain polarity topology layer (1072) are the same or different and are SrZnSO and PbTiO 3 、Ta 2 PdS 5 、CdPS 3 、SrTiO 3 Any one or more than two of hexagonal boron nitride hBN to form a three-dimensional high-order topological superlattice structure.
2. A semiconductor laser element with a strained polar topology layer as recited in claim 1, characterized in that the substrate (100) is sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiNx, sapphire/SiO 2 SiNx composite substrate and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
3. The semiconductor laser device having a strained polar topology according to claim 1, wherein the lower confinement layer (101) is any one or a combination of two or more of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, has a thickness of 50-5000nm, and has a Si doping concentration of 1E18-1E20cm -3 。
4. A topological layer with strain polarity as recited in claim 1The semiconductor laser device of (2) is characterized in that the lower waveguide layer (102) and the upper waveguide layer (104) are any one or a combination of more than two of GaN, inGaN, alInGaN, the thickness is 50-1000nm, and the doping concentration of Si is 1E16-5E19cm -3 。
5. The semiconductor laser device according to claim 1, wherein the active layer (103) has a periodic structure comprising a well layer and a barrier layer, the number of periods is 3 to or more than 1, the well layer is a combination of any one or two or more of InGaN, inN, alInN, gaN, the thickness is 10 to 80 a/m, and the barrier layer is a combination of any one or two or more of GaN, alGaN, alInGaN, alN, alInN, and the thickness is 10 to 120 a/m.
6. The semiconductor laser device having a strained polar topology layer as recited in claim 1, wherein the electron blocking layer (105) and the upper confinement layer (106) are a combination of any one or more of GaN, alGaN, alInGaN, alN, alInN, have a thickness of 20-1000nm, and a mg doping concentration of 1E18-1E20cm -3 。
7. The semiconductor laser device with the strained polar topology layer according to claim 1, wherein the thickness of the first strained polar topology layer (1071) and the second strained polar topology layer (1072) are each 5-500nm.
8. A semiconductor laser element with a strained polar topology layer according to claim 1 or 7, characterized in that the first strained polar topology layer (1071) and the second strained polar topology layer (1072) are three-dimensional high order topology superlattice structures formed by binary combinations of: srZnSO/PbTiO 3 ，SrZnSO/Ta 2 PdS 5 ，SrZnSO/CdPS 3 ，SrZnSO/SrTiO 3 ，SrZnSO/hBN，PbTiO 3 /Ta 2 PdS 5 ，PbTiO 3 /CdPS 3 ，PbTiO 3 /SrTiO 3 ，PbTiO 3 /hBN，Ta 2 PdS 5 /CdPS 3 ，Ta 2 PdS 5 /SrTiO 3 ，Ta 2 PdS 5 /hBN，CdPS 3 /SrTiO 3 ，CdPS 3 /hBN，SrTiO 3 /hBN。
9. A semiconductor laser element with a strained polar topology layer according to claim 1 or 7, characterized in that the first strained polar topology layer (1071) and the second strained polar topology layer (1072) are three-dimensional high order topology superlattice structures formed by a ternary combination of: srZnSO/PbTiO 3 /Ta 2 PdS 5 ，SrZnSO/PbTiO 3 /CdPS 3 ，SrZnSO/PbTiO 3 /SrTiO 3 ，SrZnSO/PbTiO 3 /hBN，SrZnSO/Ta 2 PdS 5 /CdPS 3 ，SrZnSO/Ta 2 PdS 5 /SrTiO 3 ，SrZnSO/Ta 2 PdS 5 /hBN，SrZnSO/CdPS 3 /SrTiO 3 ，SrZnSO/CdPS 3 /hBN，SrZnSO/SrTiO 3 /hBN，PbTiO 3 /Ta 2 PdS 5 /CdPS 3 ，PbTiO 3 /Ta 2 PdS 5 /SrTiO 3 ，PbTiO 3 /Ta 2 PdS 5 /hBN，PbTiO 3 /CdPS 3 /SrTiO 3 ，PbTiO 3 /CdPS 3 /hBN，PbTiO 3 /SrTiO 3 /hBN，Ta 2 PdS 5 /CdPS 3 /SrTiO 3 ，Ta 2 PdS 5 /CdPS 3 /hBN，Ta 2 PdS 5 /SrTiO 3 /hBN，CdPS 3 /SrTiO 3 /hBN。
10. A semiconductor laser element with a strained polar topology layer according to claim 1 or 7, characterized in that the first strained polar topology layer (1071) and the second strained polar topology layer (1072) are three-dimensional high-order topology superlattice structures formed by a quaternary combination or a penta-or hexa-combination of: srZnSO/PbTiO 3 /Ta 2 PdS 5 /CdPS 3 ，SrZnSO/PbTiO 3 /Ta 2 PdS 5 /SrTiO 3 ，SrZnSO/PbTiO 3 /Ta 2 PdS 5 /hBN，SrZnSO/Ta 2 PdS 5 /CdPS 3 /SrTiO 3 ，SrZnSO/Ta 2 PdS 5 /CdPS 3 /hBN，SrZnSO/CdPS 3 /SrTiO 3 /hBN，PbTiO 3 /Ta 2 PdS 5 /CdPS 3 /SrTiO 3 ，PbTiO 3 /Ta 2 PdS 5 /CdPS 3 /hBN，PbTiO 3 /CdPS 3 /SrTiO 3 /hBN，Ta 2 PdS 5 /CdPS 3 /SrTiO 3 /hBN，SrZnSO/PbTiO 3 /Ta 2 PdS 5 /CdPS 3 /SrTiO 3 ，SrZnSO/PbTiO 3 /Ta 2 PdS 5 /CdPS 3 /hBN，SrZnSO/PbTiO 3 /Ta 2 PdS 5 /SrTiO 3 /hBN，SrZnSO/PbTiO 3 /CdPS 3 /SrTiO 3 /hBN，SrZnSO/Ta 2 PdS 5 /CdPS 3 /SrTiO 3 /hBN，PbTiO 3 /Ta 2 PdS 5 /CdPS 3 /SrTiO 3 /hBN，SrZnSO/PbTiO 3 /Ta 2 PdS 5 /CdPS 3 /SrTiO 3 /hBN。
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