CN117096731A - Semiconductor laser with magneto-electric coupling layer - Google Patents
Semiconductor laser with magneto-electric coupling layer Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims abstract description 20
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- 229910006404 SnO 2 Inorganic materials 0.000 claims description 58
- 229910052594 sapphire Inorganic materials 0.000 claims description 12
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- 229910004205 SiNX Inorganic materials 0.000 claims description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 2
- 229910010093 LiAlO Inorganic materials 0.000 claims description 2
- 229910020068 MgAl Inorganic materials 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
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- 229910002704 AlGaN Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/204—Strongly index guided structures
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Abstract
The invention relates to the technical field of semiconductor devices, in particular to a semiconductor laser with a magneto-electric coupling layer. The device comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer from bottom to top, wherein magneto-electric coupling layers are arranged between the active layer and the electron blocking layer and between the electron blocking layer and the upper limiting layer; the magneto-electricity coupling layer has geometrical magnetic resistance frustration property, generates phase change to enhance magneto-electricity coupling to induce an active layer region to generate magneto-electricity coupling effect, changes electric field distribution of the active layer through topological magnetic domain and topological electronic structure regulation and control, counteracts polarization effect of the active layer through the electric field, reduces hole injection potential barrier, improves injection efficiency of electrons and holes, improves carrier injection uniformity of a laser, enhances internal quantum efficiency of the active layer, enhances limiting factor and gain uniformity, reduces internal optical loss, reduces excitation threshold of the laser, and improves optical power and slope efficiency of the laser.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectric devices, in particular to a semiconductor laser with a magneto-electric coupling layer.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The laser has various types and various classification modes, and mainly comprises solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like.
The laser is greatly different from the nitride semiconductor light-emitting diode, 1) the laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level; 2) The current density of the laser reaches KA/cm2, which is more than 2 orders of magnitude higher than that of the nitride light-emitting diode, so that stronger electron leakage, more serious Auger recombination, stronger polarization effect and more serious electron-hole mismatch are caused, and more serious efficiency attenuation drop effect is caused; 3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated; 4) The principle is different: the light emitting diode generates radiation composite luminescence by electron hole transition to a quantum well or a p-n junction under the action of external voltage, and the laser can perform lasing under the condition that the lasing condition is satisfied, the inversion distribution of carriers in an active area is required to be satisfied, stimulated radiation light oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss by satisfying a threshold condition, and finally laser is output.
The nitride semiconductor laser has the following problems: 1) The internal lattice mismatch is large, the strain is large, the polarization effect is strong, and the QCSE quantum confinement Stark effect is strong, so that the improvement of the electric lasing gain of the laser is limited; 2) The p-type semiconductor has the advantages that the Mg acceptor activation energy is large, the ionization efficiency is low, the hole concentration is far lower than the electron concentration, the hole mobility is far lower than the electron mobility, the quantum well polarization electric field promotes the problems that a hole injection barrier, the hole overflows an active layer and the like, the hole injection is uneven and the efficiency is low, the serious asymmetry mismatch of electron holes in the quantum well, the electron leakage and the carrier de-localization are caused, the hole transportation in the quantum well is more difficult, the carrier injection is uneven, the gain is uneven, meanwhile, the gain spectrum of the laser is widened, the peak gain is reduced, the threshold current of the laser is increased, and the slope efficiency is reduced. 3) The valence band step of the laser is increased, the hole is more difficult to transport in the quantum well, the carrier injection is uneven, and the gain is uneven.
Disclosure of Invention
The invention aims to provide a semiconductor laser with a magneto-electric coupling layer, wherein the magneto-electric coupling layer arranged in the semiconductor laser can generate magneto-electric coupling effect in an active layer area, change electric field distribution of the active layer, improve injection efficiency of electrons and holes, improve transport efficiency of the holes, improve internal quantum efficiency of the active layer, enhance limiting factors, reduce internal loss, reduce valence band connection and excitation threshold of the laser, and improve optical power and slope efficiency of the laser.
In order to achieve the above purpose, the present invention adopts the following technical scheme: a semiconductor laser with magneto-electric coupling layer comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer from bottom to top, wherein a first magneto-electric coupling layer is arranged between the upper waveguide layer and the electron blocking layer, and the electron blocking layer and the upper limiting layer are arranged on the semiconductor laserA second magneto-electric coupling layer is arranged between the first magneto-electric coupling layer and the second magneto-electric coupling layer; the first magneto-electric coupling layer and the second magneto-electric coupling layer are the same or different and are Y 2 NiMnO 6 、SnO 2 、Mo 6 V 9 O 40 、NaMnO 2 :Ti、LaAlO 3 、KTaO 3 Any one or more than two of the three-dimensional cage-mesh magnet structures.
Further improvements as semiconductor lasers with magneto-electric coupling layers:
preferably, the thickness of the first magneto-electric coupling layer and the second magneto-electric coupling layer is 5-500nm.
Preferably, the substrate is sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiNx, sapphire/SiO 2 SiNx composite substrate and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
Preferably, the lower limiting layer is InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 One or more of BN, 50-5000nm thick and Si doping concentration of 1E18-1E20cm -3 。
Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, the period number is 3-1, the well layer is InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 One or more than two of BN with the thickness of 10-80 Emi; the barrier layer is InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 And BN, wherein the thickness is 10-120 m.
Preferably, the saidThe lower and upper waveguide layers are InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 One or more of BN, thickness of 50-1000nm, si doping concentration of 1E16-5E19cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The electron blocking layer and the upper limiting layer are InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 One or more of BN, with thickness of 20-1000nm and Mg doping concentration of 1E18-1E20cm -3 。
Preferably, the first magneto-electric coupling layer and the second magneto-electric coupling layer are three-dimensional cage-mesh magnet structures formed by binary combination of any one of the following: y is Y 2 NiMnO 6 /SnO 2 ，Y 2 NiMnO 6 /Mo 6 V 9 O 40 ，Y 2 NiMnO 6 /NaMnO 2 :Ti，Y 2 NiMnO 6 /LaAlO 3 ，Y 2 NiMnO 6 /KTaO 3 ，SnO 2 /Mo 6 V 9 O 40 ，SnO 2 /NaMnO 2 :Ti，SnO 2 /LaAlO 3 ，SnO 2 /KTaO 3 ，Mo 6 V 9 O 40 /NaMnO 2 :Ti，Mo 6 V 9 O 40 /LaAlO 3 ，Mo 6 V 9 O 40 /KTaO 3 ，NaMnO 2 :Ti/LaAlO 3 ，NaMnO 2 :Ti/KTaO 3 ，LaAlO 3 /KTaO 3 。
Preferably, the first magneto-electric coupling layer and the second magneto-electric coupling layer are three-dimensional cage-mesh magnet structures formed by ternary combination of any one of the following: y is Y 2 NiMnO 6 /SnO 2 /Mo 6 V 9 O 40 ，Y 2 NiMnO 6 /SnO 2 /NaMnO 2 :Ti ， Y 2 NiMnO 6 /SnO 2 /LaAlO 3 ，Y 2 NiMnO 6 /SnO 2 /KTaO 3 ， Y 2 NiMnO 6 /Mo 6 V 9 O 40 /NaMnO 2 :Ti ，Y 2 NiMnO 6 /Mo 6 V 9 O 40 /LaAlO 3 ， Y 2 NiMnO 6 /Mo 6 V 9 O 40 /KTaO 3 ，Y 2 NiMnO 6 /NaMnO 2 :Ti/LaAlO 3 ， Y 2 NiMnO 6 /NaMnO 2 :Ti/KTaO 3 ，Y 2 NiMnO 6 /LaAlO 3 /KTaO 3 ，SnO 2 /Mo 6 V 9 O 40 /NaMnO 2 :Ti，SnO 2 /Mo 6 V 9 O 40 /LaAlO 3 ，SnO 2 /Mo 6 V 9 O 40 /KTaO 3 ，SnO 2 /NaMnO 2 :Ti/LaAlO 3 ，SnO 2 /NaMnO 2 :Ti/KTaO 3 ，SnO 2 /LaAlO 3 /KTaO 3 ，Mo 6 V 9 O 40 /NaMnO 2 :Ti/LaAlO 3 ，Mo 6 V 9 O 40 /NaMnO 2 :Ti/KTaO 3 ，Mo 6 V 9 O 40 /LaAlO 3 /KTaO 3 ，NaMnO 2 :Ti/LaAlO 3 /KTaO 3 。
Preferably, the first magneto-electric coupling layer and the second magneto-electric coupling layer are three-dimensional cage-mesh magnet structures formed by any one of the following quaternary combinations: y is Y 2 NiMnO 6 /SnO 2 /Mo 6 V 9 O 40 /NaMnO 2 :Ti，Y 2 NiMnO 6 /SnO 2 /Mo 6 V 9 O 40 /LaAlO 3 ，Y 2 NiMnO 6 /SnO 2 /Mo 6 V 9 O 40 /KTaO 3 ，Y 2 NiMnO 6 /Mo 6 V 9 O 40 /NaMnO 2 :Ti/LaAlO 3 ，Y 2 NiMnO 6 /Mo 6 V 9 O 40 /NaMnO 2 :Ti/KTaO 3 ，Y 2 NiMnO 6 /NaMnO 2 :Ti/LaAlO 3 /KTaO 3 ，SnO 2 /Mo 6 V 9 O 40 /NaMnO 2 :Ti/LaAlO 3 ，SnO 2 /Mo 6 V 9 O 40 /NaMnO 2 :Ti/KTaO 3 ，SnO 2 /NaMnO 2 :Ti/LaAlO 3 /KTaO 3 ，Mo 6 V 9 O 40 /NaMnO 2 :Ti/LaAlO 3 /KTaO 3 。
Preferably, the first magneto-electric coupling layer and the second magneto-electric coupling layer are three-dimensional cage-mesh magnet structures formed by any one of five-membered or six-membered combination: y is Y 2 NiMnO 6 /SnO 2 /Mo 6 V 9 O 40 /NaMnO 2 :Ti/LaAlO 3 ，Y 2 NiMnO 6 /SnO 2 /Mo 6 V 9 O 40 /NaMnO 2 :Ti/KTaO 3 ，Y 2 NiMnO 6 /SnO 2 /Mo 6 V 9 O 40 /LaAlO 3 /KTaO 3 ，Y 2 NiMnO 6 /SnO 2 /NaMnO 2 :Ti/LaAlO 3 /KTaO 3 ，Y 2 NiMnO 6 /Mo 6 V 9 O 40 /NaMnO 2 :Ti/LaAlO 3 /KTaO 3 ，SnO 2 /Mo 6 V 9 O 40 /NaMnO 2 :Ti/LaAlO 3 /KTaO 3 ，Y 2 NiMnO 6 /SnO 2 /Mo 6 V 9 O 40 /NaMnO 2 :Ti/LaAlO 3 /KTaO 3 。
Compared with the prior art, the invention has the beneficial effects that:
the magneto-electricity coupling layer has geometrical magnetic resistance frustration property, generates phase change to enhance magneto-electricity coupling to induce an active layer region to generate magneto-electricity coupling effect, changes electric field distribution of the active layer through topological magnetic domain and topological electronic structure regulation and control, counteracts polarization effect of the active layer through electric field, reduces hole injection potential barrier, improves injection efficiency of electrons and holes, improves carrier injection uniformity of a laser, enhances internal quantum efficiency of the active layer, enhances limiting factor and gain uniformity, reduces internal optical loss, reduces excitation threshold of the laser, and improves optical power and slope efficiency of the laser.
Drawings
Fig. 1 is a schematic structural view of a semiconductor laser in comparative example 1;
FIG. 2 is a schematic diagram of a semiconductor laser having a magneto-electric coupling layer according to the present invention;
the meaning of the symbols in the drawings is as follows:
1. a substrate; 2. a lower confinement layer; 3. a lower waveguide layer; 4. an active layer; 5. an upper waveguide layer; 6. an electron blocking layer; 7. an upper confinement layer; 81. a first magneto-electric coupling layer; 82. a second magneto-electric coupling layer.
Detailed Description
The present invention will be further described in detail with reference to the following examples, in order to make the objects, technical solutions and advantages of the present invention more apparent, and all other examples obtained by those skilled in the art without making any inventive effort are within the scope of the present invention based on the examples in the present invention.
Comparative example 1
This comparative example provides a conventional laser having a structure as shown in fig. 1, which includes, in order from bottom to top, a substrate 1, a lower confinement layer 2, a lower waveguide layer 3, an active layer 4, an upper waveguide layer 5, an electron blocking layer 6, and an upper confinement layer 7, specifically:
the substrate 1 is a GaN substrate;
the lower limiting layer 2 is AlInP with the thickness of 100nm and the doping concentration of Si of 1E18 cm -3 ；
The lower waveguide layer 3 is a combination of GaN and AlGaP, the thickness is 100nm, and the doping concentration of Si is 1E18 cm -3 ；
The active layer 4 is a periodic structure formed by a well layer and a barrier layer, and the period number m is 3; the well layer is a combination of GaP and InP, and the thickness is 30 m; the barrier layer is GaN and has a thickness of 50 Emeter;
the upper waveguide layer 5 is a InGaAs, alInAs combination with a thickness of 100nm and a Si doping concentration of 1E18 cm -3 ；
The electron blocking layer 6 is a combination of InN and GaN, the thickness is 100nm, and the doping concentration of Mg1E19 cm -3 。
The upper confinement layer 7 is AlInGaN, the thickness is 100nm, and the doping concentration of Mg is 1E19 cm -3 。
Example 1
The present embodiment provides a semiconductor laser 1 having a magneto-electric coupling layer, with specific structure reference to comparative example 1, except that a first magneto-electric coupling layer 81 is provided between the upper waveguide layer 5 and the electron blocking layer 6;
the thickness of the first magneto-electric coupling layer 81 is 100nm and is LaAlO 3 The three-dimensional cage-mesh magnet structure is formed.
Example 2
The present embodiment provides a semiconductor laser 2 having a magneto-electric coupling layer, with specific structure reference to comparative example 1, except that a second magneto-electric coupling layer 82 is provided between the electron blocking layer 6 and the upper confinement layer 7;
the second magneto-electric coupling layer 82 has a thickness of 200nm and is Mo 6 V 9 O 40 /NaMnO 2 :Ti/KTaO 3 Three-dimensional cage mesh magnet structure formed by ternary combination.
Example 3
The present embodiment provides a semiconductor laser 3 with a magneto-electric coupling layer, the structure of which is shown in fig. 2, and the specific structure of which is as follows from bottom to top:
the substrate 1 is sapphire/SiO 2 A composite substrate;
the lower limiting layer 2 is a combination of AlInP and InGaP, the thickness is 100nm, and the doping concentration of Si is 1E18 cm -3 ；
The lower waveguide layer 3 is a combination of InGaN, alInGaN, inP, the thickness is 1000nm, and the doping concentration of Si is 1E19 cm -3 ；
The active layer 4 is a periodic structure formed by a well layer and a barrier layer, and the period number m is 2; the well layer is a combination of AlGaAs and SiC, and the thickness is 40 angstroms; the barrier layer is a combination of AlGaN and AlInN, and the thickness is 70 Emi;
the upper waveguide layer 5 is a InGaN, alInGaN combination with a thickness of 50nm and a Si doping concentration of 1E16 cm -3 ；
The thickness of the first magneto-electric coupling layer 81 is 200nm, snO 2 /Mo 6 V 9 O 40 /NaMnO 2 :Ti/KTaO 3 A three-dimensional cage-mesh magnet structure formed by quaternary combination;
the electron blocking layer 6 is a combination of GaN, alN, alInGaN, the thickness is 1000nm, and the doping concentration of Mg is 1E18 cm -3 ；
The thickness of the first magneto-electric coupling layer 82 is 200nm, snO 2 /Mo 6 V 9 O 40 /NaMnO 2 :Ti/KTaO 3 A three-dimensional cage-mesh magnet structure formed by quaternary combination;
the upper limiting layer 7 is a combination of InP, alN, BN, the thickness is 1000nm, and the doping concentration of Mg is 1E19 cm -3 。
Example 4
The present embodiment provides a semiconductor laser 4 with a magneto-electric coupling layer, the structure of which is shown in fig. 2, and the specific structure of which is as follows from bottom to top:
the substrate 1 is a sapphire substrate;
the lower limiting layer 2 is InGaN, siC, ga 2 O 3 Is 2000nm thick, and Si doping concentration is 1E20cm -3 。
The lower waveguide layer 3 is composed of BN and AlInGaN, has a thickness of 300nm and a Si doping concentration of 1E18 cm -3 ；
The active layer 4 is a periodic structure formed by a well layer and a barrier layer, and the period number m is 1; the well layer is a combination of InGaN and SiC, and the thickness is 50 angstroms; the barrier layer is a combination of GaN, alInGaN, alGaN and has a thickness of 100 angstroms;
the upper waveguide layer 5 is a combination of InGaN, alInGaN, inGaP, has a thickness of 1000nm and a Si doping concentration of 1E17 cm -3 ；
The thickness of the first magneto-electric coupling layer 81 is 200nm, Y 2 NiMnO 6 /SnO 2 /Mo 6 V 9 O 40 /NaMnO 2 :Ti/LaAlO 3 /KTaO 3 A three-dimensional cage-mesh magnet structure formed by five-membered combination;
the electron blocking layer6 is AlInGaN, alInN, the thickness is 200nm, and the doping concentration of Mg is 1E18 cm -3 ；
The thickness of the second magneto-electric coupling layer 82 is 400nm, Y 2 NiMnO 6 /SnO 2 /LaAlO 3 Three-dimensional cage-mesh magnet structure formed by ternary combination;
the upper limiting layer 7 is a AlInGaN, alN, alInN combination with the thickness of 100nm and the doping concentration of Mg of 1E19 cm -3 。
The semiconductor lasers in the above comparative examples, and the semiconductor lasers having magneto-electric coupling layers in examples 1 to 4 were subjected to performance tests, and the results are shown in the following table 1:
table 1 data of performance test of semiconductor lasers in comparative example 1 and examples 1 to 4
As can be seen from table 1 above, compared with the conventional lasers, the semiconductor lasers with magneto-electric coupling layers of the present invention in examples 1 to 4 have an average slope efficiency improved by 91%, an average threshold current density reduced by 50%, an average optical power improved by 93%, an average confinement factor improved by 80%, and an average internal optical loss reduced by 68%.
Those skilled in the art will appreciate that the foregoing is merely a few, but not all, embodiments of the invention. It should be noted that many variations and modifications can be made by those skilled in the art, and all variations and modifications which do not depart from the scope of the invention as defined in the appended claims are intended to be protected.
Claims (10)
1. Semiconductor laser with magneto-electric coupling layer comprising in order from bottom to top a substrate (1), a lower confinement layer (2), a lower waveguide layer (3), an active layer (4), an upper waveguide layer (5), an electron blocking layer (6), an upper confinement layer (7), characterized in that a first magneto-electric coupling layer (81) is arranged between the upper waveguide layer (5) and the electron blocking layer (6), between the electron blocking layer (6) and the upper confinement layer (7)A second magneto-electric coupling layer (82) is provided; the first magneto-electric coupling layer (81) and the second magneto-electric coupling layer (82) are the same or different and are Y 2 NiMnO 6 、SnO 2 、Mo 6 V 9 O 40 、NaMnO 2 :Ti、LaAlO 3 、KTaO 3 Any one or more than two of the three-dimensional cage-mesh magnet structures.
2. A semiconductor laser with a magneto-electric coupling layer according to claim 1, characterized in that the thickness of the first magneto-electric coupling layer (81) and the second magneto-electric coupling layer (82) is 5-500nm.
3. A semiconductor laser with magneto-electric coupling layer according to claim 1, characterized in that the substrate (1) is sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiNx, sapphire/SiO 2 SiNx composite substrate and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
4. A semiconductor laser with magneto-electric coupling layer according to claim 1 or 2, characterized in that the lower confinement layer (2) is InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 One or more of BN, 50-5000nm thick and Si doping concentration of 1E18-1E20cm -3 。
5. The semiconductor laser with magneto-electric coupling layer according to claim 1 or 2, characterized in that the active layer (4) is a periodic structure composed of a well layer and a barrier layer, the period number is 3.gtoreq.m.gtoreq.1, the well layer is InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga 2 O 3 One or more than two of BN with the thickness of 10-80 Emi; the barrier layer is InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 And BN, wherein the thickness is 10-120 m.
6. A semiconductor laser with magneto-electric coupling layer according to claim 1 or 2, characterized in that the lower waveguide layer (3) and the upper waveguide layer (5) are InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 One or more of BN, 50-1000nm thick and Si doping concentration of 1E16-5E19cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The electron blocking layer (6) and the upper limiting layer (7) are InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 One or more of BN, with thickness of 20-1000nm and Mg doping concentration of 1E18-1E20cm -3 。
7. A semiconductor laser with magneto-electric coupling layer according to claim 1 or 2, characterized in that the first magneto-electric coupling layer (81) and the second magneto-electric coupling layer (82) are three-dimensional cage-like magnet structures composed of any one of the following binary combinations: y is Y 2 NiMnO 6 /SnO 2 ，
Y 2 NiMnO 6 /Mo 6 V 9 O 40 ，Y 2 NiMnO 6 /NaMnO 2 :Ti，Y 2 NiMnO 6 /LaAlO 3 ，
Y 2 NiMnO 6 /KTaO 3 ，SnO 2 /Mo 6 V 9 O 40 ，SnO 2 /NaMnO 2 :Ti，SnO 2 /LaAlO 3 ，
SnO 2 /KTaO 3 ，Mo 6 V 9 O 40 /NaMnO 2 :Ti，Mo 6 V 9 O 40 /LaAlO 3 ，Mo 6 V 9 O 40 /KTaO 3 ，NaMnO 2 :Ti/LaAlO 3 ，NaMnO 2 :Ti/KTaO 3 ，LaAlO 3 /KTaO 3 。
8. A semiconductor laser with magneto-electric coupling layer according to claim 1 or 2, characterized in that the first magneto-electric coupling layer (81) and the second magneto-electric coupling layer (82) are three-dimensional cage-like magnet structures composed of a ternary combination of any one of the following:
Y 2 NiMnO 6 /SnO 2 /Mo 6 V 9 O 40 ，Y 2 NiMnO 6 /SnO 2 /NaMnO 2 :Ti，
Y 2 NiMnO 6 /SnO 2 /LaAlO 3 ，Y 2 NiMnO 6 /SnO 2 /KTaO 3 ，
Y 2 NiMnO 6 /Mo 6 V 9 O 40 /NaMnO 2 :Ti，Y 2 NiMnO 6 /Mo 6 V 9 O 40 /LaAlO 3 ，
Y 2 NiMnO 6 /Mo 6 V 9 O 40 /KTaO 3 ，Y 2 NiMnO 6 /NaMnO 2 :Ti/LaAlO 3 ，
Y 2 NiMnO 6 /NaMnO 2 :Ti/KTaO 3 ，Y 2 NiMnO 6 /LaAlO 3 /KTaO 3 ，
SnO 2 /Mo 6 V 9 O 40 /NaMnO 2 :Ti，SnO 2 /Mo 6 V 9 O 40 /LaAlO 3 ，SnO 2 /Mo 6 V 9 O 40 /KTaO 3 ，SnO 2 /NaMnO 2 :Ti/LaAlO 3 ，SnO 2 /NaMnO 2 :Ti/KTaO 3 ，SnO 2 /LaAlO 3 /KTaO 3 ，Mo 6 V 9 O 40 /NaMnO 2 :Ti/LaAlO 3 ，Mo 6 V 9 O 40 /NaMnO 2 :Ti/KTaO 3 ，Mo 6 V 9 O 40 /LaAlO 3 /KTaO 3 ，NaMnO 2 :Ti/LaAlO 3 /KTaO 3 。
9. the semiconductor laser with magneto-electric coupling layer according to claim 1 or 2, characterized in that the first magneto-electric coupling layer (81) and the second magneto-electric coupling layer (82) are three-dimensional cage-mesh magnet structures composed of any one of the following quaternary combinations:
Y 2 NiMnO 6 /SnO 2 /Mo 6 V 9 O 40 /NaMnO 2 :Ti，Y 2 NiMnO 6 /SnO 2 /Mo 6 V 9 O 40 /LaAlO 3 ，Y 2 NiMnO 6 /SnO 2 /Mo 6 V 9 O 40 /KTaO 3 ，Y 2 NiMnO 6 /Mo 6 V 9 O 40 /NaMnO 2 :Ti/LaAlO 3 ，Y 2 NiMnO 6 /Mo 6 V 9 O 40 /NaMnO 2 :Ti/KTaO 3 ，
Y 2 NiMnO 6 /NaMnO 2 :Ti/LaAlO 3 /KTaO 3 ，SnO 2 /Mo 6 V 9 O 40 /NaMnO 2 :Ti/LaAlO 3 ，SnO 2 /Mo 6 V 9 O 40 /NaMnO 2 :Ti/KTaO 3 ，SnO 2 /NaMnO 2 :Ti/LaAlO 3 /KTaO 3 ，Mo 6 V 9 O 40 /NaMnO 2 :Ti/LaAlO 3 /KTaO 3 。
10. the semiconductor laser with the magneto-electric coupling layer according to claim 1 or 2, characterized in that the first magneto-electric coupling layer (81) and the second magneto-electric coupling layer (82) are three-dimensional cage-mesh magnet structures formed by any one of five-membered or six-membered combination:
Y 2 NiMnO 6 /SnO 2 /Mo 6 V 9 O 40 /NaMnO 2 :Ti/LaAlO 3 ，
Y 2 NiMnO 6 /SnO 2 /Mo 6 V 9 O 40 /NaMnO 2 :Ti/KTaO 3 ，
Y 2 NiMnO 6 /SnO 2 /Mo 6 V 9 O 40 /LaAlO 3 /KTaO 3 ，
Y 2 NiMnO 6 /SnO 2 /NaMnO 2 :Ti/LaAlO 3 /KTaO 3 ，
Y 2 NiMnO 6 /Mo 6 V 9 O 40 /NaMnO 2 :Ti/LaAlO 3 /KTaO 3 ，
SnO 2 /Mo 6 V 9 O 40 /NaMnO 2 :Ti/LaAlO 3 /KTaO 3 ，
Y 2 NiMnO 6 /SnO 2 /Mo 6 V 9 O 40 /NaMnO 2 :Ti/LaAlO 3 /KTaO 3 。
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