CN116780339A - Semiconductor laser element - Google Patents

Semiconductor laser element Download PDF

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Publication number
CN116780339A
CN116780339A CN202310631210.XA CN202310631210A CN116780339A CN 116780339 A CN116780339 A CN 116780339A CN 202310631210 A CN202310631210 A CN 202310631210A CN 116780339 A CN116780339 A CN 116780339A
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layer
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李水清
王星河
陈婉君
张会康
黄军
胡志勇
蔡鑫
刘紫涵
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Anhui Geen Semiconductor Co ltd
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Anhui Geen Semiconductor Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention provides a semiconductor laser element, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer from bottom to top in sequence; a topological dirac electron point layer is arranged between the upper waveguide layer and the electron blocking layer, and a topological dirac electron point layer is arranged between the electron blocking layer and the upper limiting layer. The active layer is a periodic structure formed by a well layer and a barrier layer, and the period number is 3-1; the well layer is any one or any combination of InGaN, inN, alInN, gaN, and the thickness is 10-80 angstroms; the barrier layer is any one or any combination of GaN, alGaN, alInGaN, alN, alInN and has the thickness of 10-120 m. According to the semiconductor laser element provided by the invention, the arranged cage lattice structure of the topological Dirac electron dot layer can generate a non-local effect between electrons, so that the charge density wave and the quantum confinement Stark effect are inhibited.

Description

Semiconductor laser element
Technical Field
The invention relates to the technical field of semiconductor photoelectric devices, in particular to a semiconductor laser element.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, metal processing cutting, precision welding, high-density optical storage, submarine communication, atomic clock, quantum sensor and the like. The laser has various types and various classification modes, and mainly comprises solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state semiconductor laser has the advantages of small volume, high efficiency, high brightness, good directivity, light weight, good stability, long service life, simple and compact structure, miniaturization and the like.
The laser is greatly different from the nitride semiconductor light-emitting diode, 1) the laser is the stimulated radiation principle, and the light-emitting diode is the spontaneous radiation principle; the laser is generated by stimulated radiation generated by carriers, the spectrum is half-width and narrow, the monochromaticity is excellent, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, the spectrum is half-width and large, the monochromaticity is not generated, and the output power of the single light-emitting diode is in mW level; 2) The current density of the laser reaches KA/cm2, which is more than 2 orders of magnitude higher than that of the nitride light-emitting diode, so that stronger electron leakage, more serious Auger recombination, stronger polarization effect and more serious electron-hole mismatch are caused, and more serious efficiency attenuation drop effect is caused; 3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated; 4) The principle is different: the light emitting diode generates radiation composite luminescence by electron hole transition to a quantum well or a p-n junction under the action of external voltage, and the laser can perform lasing under the condition that the lasing condition is satisfied, the inversion distribution of carriers in an active area is required to be satisfied, stimulated radiation light oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss by satisfying a threshold condition, and finally laser is output.
The nitride semiconductor laser has the following problems: 1) The internal lattice mismatch is large, the strain is large, the polarization effect is strong, and the QCSE quantum confinement Stark effect is strong, so that the improvement of the electric lasing gain of the laser is limited; 2) The absorption loss of the optical waveguide is high, inherent carbon impurities compensate acceptors in a p-type semiconductor, damage p-type and the like, the ionization rate of p-type doping is low, a large amount of unionized Mg acceptors impurities can cause the increase of internal optical loss, the refractive index dispersion of the laser is reduced along with the increase of wavelength, and the mode gain of the laser is reduced; 3) The p-type semiconductor has the advantages that the Mg acceptor activation energy is large, the ionization efficiency is low, the hole concentration is far lower than the electron concentration, the hole mobility is far lower than the electron mobility, the quantum well polarization electric field promotes the problems that a hole injection barrier, the hole overflows an active layer and the like, the hole injection is uneven and the efficiency is low, the serious asymmetry mismatch of electron holes in the quantum well, the electron leakage and the carrier de-localization are caused, the hole transportation in the quantum well is more difficult, the carrier injection is uneven, the gain is uneven, meanwhile, the gain spectrum of the laser is widened, the peak gain is reduced, the threshold current of the laser is increased, and the slope efficiency is reduced. 4) The valence band step difference of the laser is increased, the hole is more difficult to transport in the quantum well, the carrier injection is uneven, and the gain is uneven; after the laser is excited, the carrier concentration of the active region of the multiple quantum well is saturated, the bipolar conductivity effect is weakened, the series resistance of the laser is increased, and the voltage of the laser is increased.
Disclosure of Invention
The present invention is directed to a semiconductor laser device, and is directed to solve the above-mentioned technical problems, by forming a slope efficiency enhancing structure on an active layer, so as to reduce stress mismatch of the active layer, reduce quantum confinement Stark effect, further enhance carrier injection efficiency and uniformity of the laser device, narrow gain spectrum of the laser device, enhance thermal stability, and further enhance slope efficiency.
In order to solve the technical problems, the invention provides a semiconductor laser element, which sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer from bottom to top; a topological dirac electron point layer is arranged between the upper waveguide layer and the electron blocking layer, and a topological dirac electron point layer is arranged between the electron blocking layer and the upper limiting layer.
In the scheme, the arranged cage lattice structure of the topological Dirac electron dot layer can generate a non-local effect between electrons, so that the charge density wave and the quantum confinement Stark effect are inhibited.
Further, the active layer is a periodic structure formed by a well layer and a barrier layer, wherein the number of periods is more than or equal to 3 and more than or equal to 1; the well layer is any one or any combination of InGaN, inN, alInN, gaN, and the thickness is 10-80 m; the barrier layer is any one or any combination of GaN, alGaN, alInGaN, alN, alInN and has the thickness of 10-120 m.
Further, the topological dirac electronic dot layer is CsV 3 Sb 5 @BAs、KV 3 Sb 5 @BAs、RbV 3 Sb 5 @BAs、LaFe 4 Sb 12 @BAs、AsP@MoS 2 、PbSe@MoS 2 Any one or any combination of two-dimensional cage superlattice.
In the above scheme, any combination of the topological dirac electron point layers includes a two-dimensional cage superlattice of the following binary combination: csV (CsV) 3 Sb 5 @BAs/KV 3 Sb 5 @BAs，CsV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs，CsV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs，CsV 3 Sb 5 @BAs/AsP@MoS 2 ，CsV 3 Sb 5 @BAs/PbSe@MoS 2 ，KV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs，KV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs，KV 3 Sb 5 @BAs/AsP@MoS 2 ，KV 3 Sb 5 @BAs/PbSe@MoS 2 ，RbV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs，RbV 3 Sb 5 @BAs/AsP@MoS 2 ，RbV 3 Sb 5 @BAs/PbSe@MoS 2 ，LaFe 4 Sb 12 @BAs/AsP@MoS 2 ，LaFe 4 Sb 12 @BAs/PbSe@MoS 2 ，AsP@MoS 2 /PbSe@MoS 2 。
In the above scheme, the following arrangement may be further performed, where any combination of the topological dirac electron dot layers 107 includes a two-dimensional cage superlattice of the following ternary combination: csV (CsV) 3 Sb 5 @BAs/KV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs，CsV 3 Sb 5 @BAs/KV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs，CsV 3 Sb 5 @BAs/KV 3 Sb 5 @BAs/AsP@MoS 2 ，CsV 3 Sb 5 @BAs/KV 3 Sb 5 @BAs/PbSe@MoS 2 ，CsV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs，CsV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/AsP@MoS 2 ，CsV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/PbSe@MoS 2 ，CsV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/AsP@MoS 2 ，CsV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/PbSe@MoS 2 ，CsV 3 Sb 5 @BAs/AsP@MoS 2 /PbSe@MoS 2 ，KV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs，KV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/AsP@MoS 2 ，KV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/PbSe@MoS 2 ，KV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/AsP@MoS 2 ，KV 3 Sb 5 @BAs/LaFe4Sb 12 @BAs/PbSe@MoS 2 ，KV 3 Sb 5 @BAs/AsP@MoS 2 /PbSe@MoS 2 ，RbV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/AsP@MoS 2 ，RbV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/PbSe@MoS 2 ，RbV 3 Sb 5 @BAs/AsP@MoS 2 /PbSe@MoS 2 。
In the above scheme, the two-dimensional cage superlattice of the topological dirac electron dot layer can be set as follows: csV (CsV) 3 Sb 5 @BAs/KV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/AsP@MoS 2 ，CsV 3 Sb 5 @BAs/KV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/PbSe@MoS 2 ，CsV 3 Sb 5 @BAs/KV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/AsP@MoS 2 /PbSe@MoS 2 ，CsV 3 Sb 5 @BAs/KV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/AsP@MoS 2 /PbSe@MoS 2 ，CsV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/AsP@MoS 2 /PbSe@MoS 2 ，KV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/AsP@MoS 2 /PbSe@MoS 2 ，CsV 3 Sb 5 @BAs/KV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/AsP@MoS 2 /PbSe@MoS 2 。
Further, the thickness of the topological dirac electron dot layer is 5-5000 angstroms.
In the scheme, the lower limiting layer is any one or any combination of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, the thickness is 50-5000 nm, and the doping concentration of Si is 1E 18-1E 20cm -3 。
In the scheme, the lower waveguide layer and the upper waveguide layer are any one or any combination of GaN, inGaN, alInGaN, the thickness is 50-1000 nm, and the doping concentration of Si is 1E 16-5E 19cm -3 。
Further, the electron blocking layer and the upper limiting layer are any one or any combination of GaN, alGaN, alInGaN, alN, alInN, the thickness is 20-1000 nm, and the doping concentration of Mg is 1E 18-1E 20cm -3 。
Further, the substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiNx, sapphire/SiO 2 SiNx composite substrate and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
In the scheme, the topological Dirac electron point layers are arranged between the upper waveguide layer and the electron blocking layer and between the electron blocking layer and the upper limiting layer, so that strong charge fluctuation caused by electron flat band can be induced to generate, the injection efficiency of holes is enhanced, the radiation recombination efficiency of electron-hole wave functions in the active layer is enhanced, the limiting factor is improved, the internal loss is reduced, the excitation threshold of the laser element is reduced, and the light power and slope efficiency of the laser element are improved.
Drawings
FIG. 1 is a schematic diagram of a semiconductor laser device according to an embodiment of the present invention;
wherein: 100. a substrate; 101. a lower confinement layer; 102. lower waveguide layer by layer; 103. an active layer; 104. an upper waveguide layer; 105. an electron blocking layer; 106. an upper confinement layer; 107. topological dirac electron dot layer.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1, the present embodiment provides a semiconductor laser device, which includes, in order from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106; a topological dirac electron dot layer 107 is disposed between the upper waveguide layer 104 and the electron blocking layer 105, and a topological dirac electron dot layer 107 is disposed between the electron blocking layer 105 and the upper confinement layer 106.
In this embodiment, the non-localized effect between electrons can be generated by the arranged cage lattice structure of the topological dirac electron dot layer 107, and the charge density wave and quantum confinement Stark effect can be suppressed.
It should be further noted that, the active layer 103 is a periodic structure formed by a well layer and a barrier layer, where the number of periods is 3 not less than m not less than 1; the well layer is any one or any combination of InGaN, inN, alInN, gaN, and the thickness is 10-80 m; the barrier layer is any one or any combination of GaN, alGaN, alInGaN, alN, alInN and has the thickness of 10-120 m.
It should be further noted that the topological dirac electronic dot layer 107 is CsV 3 Sb 5 @BAs、KV 3 Sb 5 @BAs、RbV 3 Sb 5 @BAs、LaFe 4 Sb 12 @BAs、AsP@MoS 2 、PbSe@MoS 2 Any one or any combination of two-dimensional cage superlattice.
Specifically, any combination of the topological dirac electron dot layers 107 includes a two-dimensional cage superlattice of the following binary combination: csV (CsV) 3 Sb 5 @BAs/KV 3 Sb 5 @BAs，CsV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs，CsV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs ， CsV 3 Sb 5 @BAs/AsP@MoS 2 ，CsV 3 Sb 5 @BAs/PbSe@MoS 2 ，KV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs，KV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs，KV 3 Sb 5 @BAs/AsP@MoS 2 ，KV 3 Sb 5 @BAs/PbSe@MoS 2 ，RbV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs，RbV 3 Sb 5 @BAs/AsP@MoS 2 ，RbV 3 Sb 5 @BAs/PbSe@MoS 2 ，LaFe 4 Sb 12 @BAs/AsP@MoS 2 ，LaFe 4 Sb 12 @BAs/PbSe@MoS 2 ，AsP@MoS 2 /PbSe@MoS 2 。
Specifically, the following arrangement may be further made, where any combination of the topological dirac electron dot layers 107 includes a two-dimensional cage superlattice of the following ternary combination: csV (CsV) 3 Sb 5 @BAs/KV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs，CsV 3 Sb 5 @BAs/KV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs，CsV 3 Sb 5 @BAs/KV 3 Sb 5 @BAs/AsP@MoS 2 ，CsV 3 Sb 5 @BAs/KV 3 Sb 5 @BAs/PbSe@MoS 2 ，CsV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs，CsV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/AsP@MoS 2 ，CsV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/PbSe@MoS 2 ，CsV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/AsP@MoS 2 ，CsV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/PbSe@MoS 2 ，CsV 3 Sb 5 @BAs/AsP@MoS 2 /PbSe@MoS 2 ，KV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs，KV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/AsP@MoS 2 ，KV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/PbSe@MoS 2 ，KV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/AsP@MoS 2 ，KV 3 Sb 5 @BAs/LaFe4Sb 12 @BAs/PbSe@MoS 2 ，KV 3 Sb 5 @BAs/AsP@MoS 2 /PbSe@MoS 2 ，RbV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/AsP@MoS 2 ，RbV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/PbSe@MoS 2 ，RbV 3 Sb 5 @BAs/AsP@MoS 2 /PbSe@MoS 2 。
Specifically, the two-dimensional cage superlattice of the topological dirac electron dot layer 107 may be set as follows: csV (CsV) 3 Sb 5 @BAs/KV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/AsP@MoS 2 ，CsV 3 Sb 5 @BAs/KV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/PbSe@MoS 2 ，CsV 3 Sb 5 @BAs/KV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/AsP@MoS 2 /PbSe@MoS 2 ，CsV 3 Sb 5 @BAs/KV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/AsP@MoS 2 /PbSe@MoS 2 ，CsV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/AsP@MoS 2 /PbSe@MoS 2 ，KV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/AsP@MoS 2 /PbSe@MoS 2 ，CsV 3 Sb 5 @BAs/KV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/AsP@MoS 2 /PbSe@MoS 2 。
Further defined, the thickness of the topological dirac electron dot layer 107 is 5 to 5000 a/m.
Specifically, the lower limiting layer is any one or any combination of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, the thickness is 50-5000 nm, and the doping concentration of Si is 1E 18-1E 20cm -3 。
Specifically, the lower waveguide layer and the upper waveguide layer are any one or any combination of GaN, inGaN, alInGaN, the thickness is 50-1000 nm, and the doping concentration of Si is 1E 16-5E 19cm -3 。
The electron blocking layer and the upper limiting layer are any one or any combination of GaN, alGaN, alInGaN, alN, alInN, the thickness is 20-1000 nm, and the doping concentration of Mg is 1E 18-1E 20cm -3 。
It is also desirable that the substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiNx, sapphire/SiO 2 SiNx composite substrate and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
In this embodiment, by disposing the dirac electron dot layer 107 between the upper waveguide layer 104 and the electron blocking layer 105 and between the electron blocking layer 105 and the upper confinement layer 106, it is possible to induce the generation of electron flat bands to cause strong charge fluctuation, enhance hole injection efficiency, enhance radiation recombination efficiency of electron hole wave functions in the active layer, and introduce dirac electron dots with band topology, raise confinement factors, reduce internal loss, thereby reducing the excitation threshold of the laser element, and improve optical power and slope efficiency of the laser element.
Further, in order to highlight the technical advantages of the present technical solution, the performance of each item of the laser element provided by the present invention is compared with that of the conventional laser element in the lateral direction, and the comparison result can be seen in table 1.
Table 1 performance comparison table of the laser device of the present invention and the conventional laser device
Through comparison, the laser element provided by the invention can effectively improve the optical power and slope efficiency of the laser element, ninety percent of the slope efficiency, ninety percent of the optical power and the limit factor are simultaneously improved, and the internal loss is reduced, so that the excitation threshold of the laser element is reduced, the charge density wave and quantum limit Stark effect are inhibited, the beneficial performances are greatly improved, the losses are effectively improved, and the laser element is convenient to popularize and use in industry.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that changes and modifications may be made without departing from the principles of the invention, such changes and modifications are also intended to be within the scope of the invention.

Claims (10)

1. The semiconductor laser element comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer from bottom to top; the structure is characterized in that a topological dirac electron point layer is arranged between the upper waveguide layer and the electron blocking layer, and a topological dirac electron point layer is arranged between the electron blocking layer and the upper limiting layer.
2. The semiconductor laser device according to claim 1, wherein the active layer has a periodic structure comprising a well layer and a barrier layer, and the number of periods is 3 to 1; the well layer is any one or any combination of InGaN, inN, alInN, gaN, and the thickness is 10-80 angstroms; the barrier layer is any one or any combination of GaN, alGaN, alInGaN, alN, alInN and has the thickness of 10-120 m.
3. The semiconductor laser device as claimed in claim 2, wherein the topological dirac electron spot layer is CsV 3 Sb 5 @BAs、KV 3 Sb 5 @BAs、RbV 3 Sb 5 @BAs、LaFe 4 Sb 12 @BAs、AsP@MoS 2 、PbSe@MoS 2 Any one or any combination of the above.
4. A semiconductor laser device as claimed in claim 3, wherein the topological dirac electron dot layer is a two-dimensional cage superlattice.
5. A semiconductor laser element according to claim 3 or 4The method is characterized in that any combination of topological dirac electron point layers comprises a two-dimensional cage superlattice of the following binary combination: csV (CsV) 3 Sb 5 @BAs/KV 3 Sb 5 @BAs，CsV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs，CsV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs，CsV 3 Sb 5 @BAs/AsP@MoS 2 ，CsV 3 Sb 5 @BAs/PbSe@MoS 2 ，KV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs，KV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs，KV 3 Sb 5 @BAs/AsP@MoS 2 ，KV 3 Sb 5 @BAs/PbSe@MoS 2 ，RbV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs，RbV 3 Sb 5 @BAs/AsP@MoS 2 ，RbV 3 Sb 5 @BAs/PbSe@MoS 2 ，LaFe 4 Sb 12 @BAs/AsP@MoS 2 ，LaFe 4 Sb 12 @BAs/PbSe@MoS 2 ，AsP@MoS 2 /PbSe@MoS 2 。
6. A semiconductor laser device as claimed in claim 3 or 4, wherein any combination of topological dirac electron spot layers comprises a two-dimensional cage superlattice of the ternary combination of: csV (CsV) 3 Sb 5 @BAs/KV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs，CsV 3 Sb 5 @BAs/KV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs，CsV 3 Sb 5 @BAs/KV 3 Sb 5 @BAs/AsP@MoS 2 ，CsV 3 Sb 5 @BAs/KV 3 Sb 5 @BAs/PbSe@MoS 2 ，CsV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs，CsV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/AsP@MoS 2 ，CsV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/PbSe@MoS 2 ，CsV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/AsP@MoS 2 ，CsV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/PbSe@MoS 2 ，CsV 3 Sb 5 @BAs/AsP@MoS 2 /PbSe@MoS 2 ，KV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs，KV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/AsP@MoS 2 ，KV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/PbSe@MoS 2 ，KV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/AsP@MoS 2 ，KV 3 Sb 5 @BAs/LaFe4Sb 12 @BAs/PbSe@MoS 2 ，KV 3 Sb 5 @BAs/AsP@MoS 2 /PbSe@MoS 2 ，RbV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/AsP@MoS 2 ，RbV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/PbSe@MoS 2 ，RbV 3 Sb 5 @BAs/AsP@MoS 2 /PbSe@MoS 2 。
7. A semiconductor laser device as claimed in claim 3, wherein the topological dirac electron dot layer comprises a two-dimensional cage superlattice: csV (CsV) 3 Sb 5 @BAs/KV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/AsP@MoS 2 ，CsV 3 Sb 5 @BAs/KV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/PbSe@MoS 2 ，CsV 3 Sb 5 @BAs/KV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/AsP@MoS 2 /PbSe@MoS 2 ，CsV 3 Sb 5 @BAs/KV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/AsP@MoS 2 /PbSe@MoS 2 ，CsV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/AsP@MoS 2 /PbSe@MoS 2 ，KV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/AsP@MoS 2 /PbSe@MoS 2 ，CsV 3 Sb 5 @BAs/KV 3 Sb 5 @BAs/RbV 3 Sb 5 @BAs/LaFe 4 Sb 12 @BAs/AsP@MoS 2 /PbSe@MoS 2 。
8. The semiconductor laser device according to claim 2, wherein the lower confinement layer is one or a combination of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, has a thickness of 50 to 5000nm, and has a Si doping concentration of 1E18 to 1E20cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The lower waveguide layer and the upper waveguide layer are GaN, inGaN, alInGaN or any combination thereof, the thickness is 50-1000 nm, and the doping concentration of Si is 1E 16-5E 19cm -3 。
9. The semiconductor laser device according to claim 2, wherein the electron blocking layer and the upper confinement layer are formed of any one or any combination of GaN, alGaN, alInGaN, alN, alInN, have a thickness of 20 to 1000nm, and have a mg doping concentration of 1E18 to 1E20cm -3 。
10. A semiconductor laser device as claimed in claim 2, wherein the substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiNx, sapphire/SiO 2 SiNx composite substrate and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
CN202310631210.XA 2023-05-31 2023-05-31 Semiconductor laser element Pending CN116780339A (en)

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