CN116131100A - Semiconductor laser element with strain-induced exciton response layer - Google Patents

Abstract

The invention belongs to the technical field of semiconductor photoelectric devices, and particularly relates to a semiconductor laser element with a strain-induced exciton response layer, which sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer from bottom to top, wherein the strain-induced exciton response layer is arranged between the upper waveguide layer and the electron blocking layer; the strain-induced exciton response layer is KV ₃ Sb ₅ 、WSe ₂ 、ReO ₃ 、RbV ₃ Sb ₅ 、CsV ₃ Sb ₅ 、KSbO ₃ One or a combination of two or more of the above; the strain-induced exciton response layer is used for creating a strain field by applying local strain on the interface between the active layer and the upper waveguide layer or the interface between the active layer and the lower waveguide layer, changing the electronic nematic property, eliminating the sub-bandgap emission state of spectrum overlapping of the strain-induced exciton response layer, inhibiting mode jump in the vertical direction, generating single-mode laser, obtaining good FFP far-field pattern, enhancing the exciton response of the active layer, reducing the driving voltage and the excitation threshold of a laser element, and enhancing the limitationAnd the factor improves the optical power and slope efficiency of the laser element.

Description

Semiconductor laser element with strain-induced exciton response layer

Technical Field

The invention relates to the technical field of semiconductor photoelectric devices, in particular to a semiconductor laser element with a strain-induced exciton response layer.

Background

The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The laser has various types and various classification modes, and mainly comprises solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like.

The laser is greatly different from the nitride semiconductor light-emitting diode, 1) the laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level; 2) The current density of the laser reaches KA/cm2, which is more than 2 orders of magnitude higher than that of the nitride light-emitting diode, so that stronger electron leakage, more serious Auger recombination, stronger polarization effect and more serious electron-hole mismatch are caused, and more serious efficiency attenuation drop effect is caused; 3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated; 4) The principle is different: the light emitting diode generates radiation composite luminescence by electron hole transition to a quantum well or a p-n junction under the action of external voltage, and the laser can perform lasing under the condition that the lasing condition is satisfied, the inversion distribution of carriers in an active area is required to be satisfied, stimulated radiation light oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss by satisfying a threshold condition, and finally laser is output.

The nitride semiconductor laser has the following problems: 1) The internal lattice mismatch is large, the strain is large, the polarization effect is strong, and the QCSE quantum confinement Stark effect is strong, so that the improvement of the electric lasing gain of the laser is limited; 2) The quantum well polarized electric field improves the problems of hole injection barrier, hole overflow active layer and the like, and the holes are injected unevenly and with low efficiency, so that the electrons and holes in the quantum well are seriously and asymmetrically not matched, the electrons are leaked and carriers are delocalized, the holes are more difficult to transport in the quantum well, the carriers are injected unevenly, and the gains are uneven; 3) Leakage of the optical field pattern to the substrate to form standing waves may result in low substrate mode suppression efficiency, resulting in poor far field pattern FFP.

Disclosure of Invention

The object of the present invention is to provide a semiconductor laser device having a strain-inducing exciton response layer of KV ₃ Sb ₅ 、WSe ₂ 、ReO ₃ 、RbV ₃ Sb ₅ 、CsV ₃ Sb ₅ 、KSbO ₃ One or a combination of two or more of the above; the strain-induced exciton response layer creates a strain field by applying local strain to the interface of the electron blocking layer and the upper waveguide layer, reduces the quantum well polarized electric field and the quantum confinement stark effect, reduces the hole injection barrier, improves the overlapping ratio of the electron and hole wave functions of the active layer, and improves the electric excitation gain; meanwhile, the strain-induced exciton response layer can change electron nematic property, so that the strain-induced exciton response layer eliminates sub-bandgap emission state with overlapped spectrums, suppresses mode jump in the vertical direction, generates single-mode laser, obtains good FFP far-field patterns, enhances exciton response of an active layer, reduces driving voltage and excitation threshold of a laser element, enhances limiting factors, and improves optical power and slope efficiency of the laser element.

In order to achieve the above purpose, the present invention adopts the following technical scheme: a semiconductor laser element with strain-induced exciton response layer comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer from bottom to top, wherein the strain-induced exciton response layer is arranged between the upper waveguide layer and the electron blocking layer, and is KV ₃ Sb ₅ 、WSe ₂ 、ReO ₃ 、RbV ₃ Sb ₅ 、CsV ₃ Sb ₅ 、KSbO ₃ The specific structure is any one or more than two of a heterojunction structure, a superlattice structure, a quantum well structure, a core-shell structure and a quantum dot structure.

Further improvements as semiconductor laser elements with strain-induced exciton response layers:

preferably, the strain-induced exciton response layer has a thickness of from 5 to 500nm.

Preferably, the lower limiting layer and the upper limiting layer are one or more than two of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, the thickness is 50-5000nm, and the Si doping concentration is 1E18-1E20cm ^-3 。

Preferably, the lower waveguide layer and the upper waveguide layer are one or more than two of GaN, inGaN, alInGaN, and the thickness is 50-1000nm.

Preferably, the active layer is a periodic structure consisting of a well layer and a barrier layer, the well layer is an InGaN well layer, the barrier layer is one or a combination of more than two of GaN, alInGaN, alGaN, alInN, and the cycle number m is more than or equal to 4 and more than or equal to 1.

Preferably, the electron blocking layer is one or more than two of GaN, alGaN, alInGaN, alN, alInN, and the thickness is 20-1000nm.

Preferably, the substrate is sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire-SiO 2 composite substrate, sapphire-AlN composite substrate, sapphire-SiNx, sapphire-SiO 2-SiNx composite substrate, magnesia-alumina spinel MgAl ₂ O ₄ 、MgO、ZnO、ZrB ₂ 、LiAlO ₂ And LiGaO ₂ Any one of the composite substrates.

Preferably, the lower limiting layer is an AlGaN layer with a thickness of 50-5000nm and a Si doping concentration of 1E18-1E20cm ^-3 The method comprises the steps of carrying out a first treatment on the surface of the The upper confinement layer is AlInGaN layer with thickness of 50-5000nm and Si doping concentration of 1E18-1E20cm ^-3 The method comprises the steps of carrying out a first treatment on the surface of the The lower waveguide layer is a GaN layer and has the thickness of 50-1000nm; the upper waveguide layer is an InGaN layer and has the thickness of 50-1000nm; the active layer is a periodic structure consisting of a well layer and a barrier layer, the well layer is an InGaN well layer, and the period number m is more than or equal to 4 and more than or equal to 1.

Preferably, the strain-induced exciton response layer is a specific structure formed by the following binary combination: KV (kilovolt) ₃ Sb ₅ /WSe ₂ ，KV ₃ Sb ₅ /ReO ₃ ，KV ₃ Sb ₅ /RbV ₃ Sb ₅ ，KV ₃ Sb ₅ /CsV ₃ Sb ₅ ，KV ₃ Sb ₅ /KSbO ₃ ，WSe ₂ /ReO ₃ ，WSe ₂ /RbV ₃ Sb ₅ ，WSe ₂ /CsV ₃ Sb ₅ ，WSe ₂ /KSbO ₃ ，ReO ₃ /RbV ₃ Sb ₅ ，ReO ₃ /CsV ₃ Sb ₅ ，ReO ₃ /KSbO ₃ ，RbV ₃ Sb ₅ /CsV ₃ Sb ₅ ，RbV ₃ Sb ₅ /KSbO ₃ ，CsV ₃ Sb ₅ /KSbO ₃ 。

Preferably, the strain-induced exciton response layer is a specific structure formed by the following ternary combination: KV (kilovolt) ₃ Sb ₅ /WSe ₂ /ReO ₃ ，KV ₃ Sb ₅ /WSe ₂ /RbV ₃ Sb ₅ ，KV ₃ Sb ₅ /WSe ₂ /CsV ₃ Sb ₅ ，KV ₃ Sb ₅ /WSe ₂ /KSbO ₃ ，KV ₃ Sb ₅ /ReO ₃ /RbV ₃ Sb ₅ ，KV ₃ Sb ₅ /ReO ₃ /CsV ₃ Sb ₅ ，KV ₃ Sb ₅ /ReO ₃ /KSbO ₃ ，KV ₃ Sb ₅ /RbV ₃ Sb ₅ /CsV ₃ Sb ₅ ，KV ₃ Sb ₅ /RbV ₃ Sb ₅ /KSbO ₃ ，KV ₃ Sb ₅ /CsV ₃ Sb ₅ /KSbO ₃ ，WSe ₂ /ReO ₃ /RbV ₃ Sb ₅ ，WSe ₂ /ReO ₃ /CsV ₃ Sb ₅ ，WSe ₂ /ReO ₃ /KSbO ₃ ，WSe ₂ /RbV ₃ Sb ₅ /CsV ₃ Sb ₅ ，WSe ₂ /RbV ₃ Sb ₅ /KSbO ₃ ，WSe ₂ /CsV ₃ Sb ₅ /KSbO ₃ ，ReO ₃ /RbV ₃ Sb ₅ /CsV ₃ Sb ₅ ，ReO ₃ /RbV ₃ Sb ₅ /KSbO ₃ ，ReO ₃ /CsV ₃ Sb ₅ /KSbO ₃ ，RbV ₃ Sb ₅ /CsV ₃ Sb ₅ /KSbO ₃ 。

Preferably, the strain-induced exciton response layer is a specific structure formed by the following quaternary combination: KV (kilovolt) ₃ Sb ₅ /WSe ₂ /ReO ₃ /RbV ₃ Sb ₅ ，KV ₃ Sb ₅ /WSe ₂ /ReO ₃ /CsV ₃ Sb ₅ ，KV ₃ Sb ₅ /WSe ₂ /ReO ₃ /KSbO ₃ ，KV ₃ Sb ₅ /ReO ₃ /RbV ₃ Sb ₅ /CsV ₃ Sb ₅ ，KV ₃ Sb ₅ /ReO ₃ /RbV ₃ Sb ₅ /KSbO ₃ ，KV ₃ Sb ₅ /RbV ₃ Sb ₅ /CsV ₃ Sb ₅ /KSbO ₃ ，WSe ₂ /ReO ₃ /RbV ₃ Sb ₅ /CsV ₃ Sb ₅ ，WSe ₂ /ReO ₃ /RbV ₃ Sb ₅ /KSbO ₃ ，WSe ₂ /RbV ₃ Sb ₅ /CsV ₃ Sb ₅ /KSbO ₃ ，ReO ₃ /RbV ₃ Sb ₅ /CsV ₃ Sb ₅ /KSbO ₃ 。

Preferably, the strain-induced exciton response layer is a specific structure formed by the following five-membered or six-membered combination: KV (kilovolt) ₃ Sb ₅ /WSe ₂ /ReO ₃ /RbV ₃ Sb ₅ /CsV ₃ Sb ₅ ，

KV ₃ Sb ₅ /WSe ₂ /ReO ₃ /RbV ₃ Sb ₅ /KSbO ₃ ，KV ₃ Sb ₅ /WSe ₂ /ReO ₃ /CsV ₃ Sb ₅ /KSbO ₃ ，KV ₃ Sb ₅ /ReO ₃ /RbV ₃ Sb ₅ /CsV ₃ Sb ₅ /KSbO ₃ ，WSe ₂ /ReO ₃ /RbV ₃ Sb ₅ /CsV ₃ Sb ₅ /KSbO ₃ ，KV ₃ Sb ₅ /WSe ₂ /ReO ₃ /RbV ₃ Sb ₅ /CsV ₃ Sb ₅ /KSbO ₃ 。

Compared with the prior art, the invention has the beneficial effects that:

1) The invention provides a semiconductor laser element with strain-induced exciton response layer, which structurally comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer from bottom to top, wherein the strain-induced exciton response layer is arranged between the lower limiting layer and the lower waveguide layerThe strain-induced exciton response layer of the optical element is KV ₃ Sb ₅ 、WSe ₂ 、ReO ₃ 、RbV ₃ Sb ₅ 、CsV ₃ Sb ₅ 、KSbO ₃ One or a combination of two or more of them; the strain-induced exciton response layer creates a strain field by applying local strain to the interface of the electron blocking layer and the upper waveguide layer, reduces the quantum well polarized electric field and the quantum confinement stark effect, reduces the hole injection barrier, improves the overlapping ratio of the electron and hole wave functions of the active layer, and improves the electric excitation gain; meanwhile, the strain-induced exciton response layer can change electron nematic property, so that the strain-induced exciton response layer eliminates sub-bandgap emission state with overlapped spectrums, suppresses mode jump in the vertical direction, generates single-mode laser, obtains good FFP far-field patterns, enhances exciton response of an active layer, reduces driving voltage and excitation threshold of a laser element, enhances limiting factors, and improves optical power and slope efficiency of the laser element.

2) The semiconductor laser element with the strain-induced exciton response layer has slope efficiency improved to be more than 1.4W/A and optical power improved to be 4.7W from 3.5W in blue laser application, so that the semiconductor laser element reaches the commercial application level.

Drawings

Fig. 1 is a schematic structural diagram of a semiconductor laser device having a strain-induced exciton response layer according to an embodiment of the present invention;

reference numerals: 100: a substrate; 101: a lower confinement layer; 102: a lower waveguide layer; 103: an active layer; 104: upper waveguide layer, 105: electron blocking layer, 106: upper confinement layer, 107: strain-induced exciton response layers.

Detailed Description

The present invention will be further described in detail with reference to the following examples, in order to make the objects, technical solutions and advantages of the present invention more apparent, and all other examples obtained by those skilled in the art without making any inventive effort are within the scope of the present invention based on the examples in the present invention.

Comparative example 1

The present comparative example provides a semiconductor laser element comprising, in order from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, an upper confinement layer 106; specific:

the substrate 100 is a GaN substrate;

the lower confinement layer 101 is an AlGaN layer with a thickness of 100nm and a Si doping concentration of 1E18cm ^-3 ；

The lower waveguide layer 102 is a GaN layer, and the thickness is 100nm;

the active layer 103 is a periodic structure formed by a well layer and a barrier layer, the well layer is an InGaN well layer, the barrier layer is GaN, and the period number m is 3;

the upper waveguide layer 104 is an InGaN layer, and the thickness is 100nm;

the electron blocking layer 105 is an AlInGaN layer with the thickness of 30nm;

the upper confinement layer 106 is an AlGaN layer with a thickness of 100nm and a Si doping concentration of 1E18cm ^-3 。

Example 1

The present embodiment provides a semiconductor laser element 1 having a strain-induced exciton response layer, the structure of which is shown in fig. 1, and which includes, in order from bottom to top, a substrate 100, a lower confinement layer 101, a strain-induced exciton response layer 107, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106; specific:

the substrate 100 is a GaN substrate;

the lower limiting layer 101 is an AlGaN layer, the thickness is 100nm, and the doping concentration of Si is 1E18cm < -3 >;

the lower waveguide layer 102 is a GaN layer, and the thickness is 100nm;

the active layer 103 is a periodic structure formed by a well layer and a barrier layer, the well layer is an InGaN well layer, the barrier layer is GaN, and the period number m is 3;

the upper waveguide layer 104 is an InGaN layer, and the thickness is 100nm;

the strain-induced exciton response layer 107 is KV ₃ Sb ₅ /RbV ₃ Sb ₅ A binary combined superlattice structure with the thickness of 100nm;

the electron blocking layer 105 is an AlInGaN layer with the thickness of 30nm;

the upper confinement layer 106 is an AlGaN layer with a thickness of 100nm and a Si doping concentration of 1E18cm ^-3 。

Example 2

The present embodiment provides a semiconductor laser element 2 having a strain-induced exciton response layer, the structure of which is shown in fig. 1, and which includes, in order from bottom to top, a substrate 100, a lower confinement layer 101, a strain-induced exciton response layer 107, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106; specific:

the substrate 100 is a GaN substrate;

the lower confinement layer 101 is a GaN layer with a thickness of 50nm and a Si doping concentration of 1E18cm ^-3 ；

The lower waveguide layer 102 is an InGaN layer, and the thickness is 50nm;

the active layer 103 is a periodic structure formed by a well layer and a barrier layer, the well layer is an InGaN well layer, the barrier layer is an AlInGaN layer, and the number m of periods satisfies m as 1;

the upper waveguide layer 104 is an AlInGaN layer with the thickness of 1000nm;

the strain-induced exciton response layer 107 is KV ₃ Sb ₅ /WSe ₂ /KSbO ₃ A ternary combined heterojunction structure with the thickness of 50nm;

the electron blocking layer 105 is a combination of GaN and AlGaN, and has a thickness of 20nm;

the upper confinement layer 106 is a combination of AlInGaN and AlN, and has a thickness of 20nm.

Example 3

The present embodiment provides a semiconductor laser element 3 having a strain-induced exciton response layer, the structure of which is shown in fig. 1, and which includes, in order from bottom to top, a substrate 100, a lower confinement layer 101, a strain-induced exciton response layer 107, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106; specific:

the substrate 100 is a GaN substrate;

the lower confinement layer 101 is an InGaN layer with a thickness of 5000nm and a Si doping concentration of 1E20cm ^-3 ；

The lower waveguide layer 102 is a combination of InGaN, alInGaN and has a thickness of 1000nm;

the active layer 103 is a periodic structure formed by a well layer and a barrier layer, the well layer is an InGaN well layer, the barrier layer is a combination of AlGaN and AlInN, and the cycle number m is 4;

the upper waveguide layer 104 is a combination of InGaN, alInGaN and has a thickness of 50nm;

the strain-induced exciton response layer 107 is KV ₃ Sb ₅ /ReO ₃ /RbV ₃ Sb ₅ /CsV ₃ Sb ₅ The quaternary combined quantum well structure has the thickness of 500nm;

the electron blocking layer 105 is a combination of GaN, alGaN, alInGaN and has a thickness of 1000nm;

the upper confinement layer 106 is a combination of AlN and AlInN, and has a thickness of 1000nm.

Example 4

The present embodiment provides a semiconductor laser element 4 having a strain-induced exciton response layer, the structure of which is shown in fig. 1, and which includes, in order from bottom to top, a substrate 100, a lower confinement layer 101, a strain-induced exciton response layer 107, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106; specific:

the substrate 100 is a GaN substrate;

the lower limiting layer 101 is a combination of AlInGaN, alN, inN, the thickness is 100nm, and the doping concentration of Si is 1E19cm ^-3 ；

The lower waveguide layer 102 is AlInGaN, and the thickness is 100nm;

the active layer 103 is a periodic structure formed by a well layer and a barrier layer, the well layer is an InGaN well layer, the barrier layer is a GaN, alInGaN, alGaN combination, and the period number m is 3;

the upper waveguide layer 104 is a combination of InGaN, alInGaN and has a thickness of 100nm;

the strain-induced exciton response layer 107 is KV ₃ Sb ₅ /ReO ₃ /RbV ₃ Sb ₅ /CsV ₃ Sb ₅ /KSbO ₃ Five-membered combined core-shell structure；

The electron blocking layer 105 is a combination of AlInGaN, alN, alInN and has a thickness of 100nm;

the upper confinement layer 106 is a combination of AlInGaN, alN, alInN and has a thickness of 100nm; example 5

The present embodiment provides a semiconductor laser element 5 with a strain-induced exciton response layer, the structure of which is shown in fig. 1, and which includes, from bottom to top, a substrate 100, a lower confinement layer 101, a strain-induced exciton response layer 107, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106; specific:

the substrate 100 is a GaN substrate;

the lower confinement layer 101 is composed of InGaN and AlInN, and has a thickness of 100nm and a Si doping concentration of 1E19cm ^-3 ；

The lower waveguide layer 102 is a combination of InGaN, alInGaN and has a thickness of 100nm;

the active layer 103 is a periodic structure formed by a well layer and a barrier layer, the well layer is an InGaN well layer, the barrier layer is a combination of GaN and AlInN, and the cycle number m is 3;

the upper waveguide layer 104 is a combination of GaN and AlInGaN, and has a thickness of 500nm;

the strain-induced exciton response layer 107 is KV ₃ Sb ₅ /WSe ₂ /ReO ₃ /RbV ₃ Sb ₅ /CsV ₃ Sb ₅ /KSbO ₃ The thickness of the six-element combined quantum dot structure and the heterojunction structure is 100nm;

the electron blocking layer 105 is a combination of GaN, alN, alInN and has a thickness of 500nm;

the upper confinement layer 106 is a combination of GaN, alGaN, alN and has a thickness of 500nm.

The performance test was performed on the semiconductor laser element in the above comparative example, and the semiconductor laser elements having the strain-induced exciton response layers in examples 1 to 5, and the results are shown in table 1 below:

table 1 data of performance test of semiconductor laser elements in comparative examples and examples 1 to 5

Project	Comparative example 1	Example 1	Example 2	Example 3	Example 4	Example 5
							Beam quality factor M2	6.7	3.6	3.4	3.5	3.3	3.7
Slope efficiency (W/A)	0.8	1.5	1.6	1.6	1.5	1.4
							Threshold current Density (kA/cm) 2 )	2.4	1.2	1.3	1.4	1.3	1.2
Optical power (W)	3.5	4.8	4.9	4.8	5.0	4.7

As can be seen from Table 1, the semiconductor laser device with strain-induced exciton response layer of the present invention has a beam quality factor M2 of less than 4, a slope efficiency of 1.4W/A or more, and a threshold current density of 2kA/cm ² In the following, the optical power was increased from 3.5W to 4.7W or more, reaching the commercial application level.

Those skilled in the art will appreciate that the foregoing is merely a few, but not all, embodiments of the invention. It should be noted that many variations and modifications can be made by those skilled in the art, and all variations and modifications which do not depart from the scope of the invention as defined in the appended claims are intended to be protected.

Claims (10)

1. A semiconductor laser device with strain-induced exciton response layer comprises a substrate (100), a lower limiting layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), an electron blocking layer (105) and an upper limiting layer (106) from bottom to top, wherein a strain-induced exciton response layer (107) is arranged between the upper waveguide layer (104) and the electron blocking layer (105), and the strain-induced exciton response layer (107) is KV ₃ Sb ₅ 、WSe ₂ 、ReO ₃ 、RbV ₃ Sb ₅ 、CsV ₃ Sb ₅ 、KSbO ₃ The specific structure is any one or more than two of a heterojunction structure, a superlattice structure, a quantum well structure, a core-shell structure and a quantum dot structure.

2. The semiconductor laser element with the strain-induced exciton response layer according to claim 1, characterized in that the thickness of the strain-induced exciton response layer (107) is 5-500nm.

3. The semiconductor laser device having a strain-induced exciton response layer as claimed in claim 1, wherein the lower confinement layer (101) and the upper confinement layer (106) are a combination of one or more than two of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, a thickness of 50 to 5000nm, and a si doping concentration of 1E18 to 1E20cm ^-3 。

4. The semiconductor laser element having the strain-induced exciton response layer according to claim 1, wherein the lower waveguide layer (102) and the upper waveguide layer (104) are a combination of one or two or more of GaN, inGaN, alInGaN and have a thickness of 50 to 1000nm.

5. The semiconductor laser device with the strain-induced exciton response layer according to claim 1, wherein the active layer (103) has a periodic structure composed of a well layer and a barrier layer, the well layer is an InGaN well layer, the barrier layer is a combination of one or two or more of GaN, alInGaN, alGaN, alInN, and the number of periods m satisfies that 4.gtoreq.m.gtoreq.1.

6. The semiconductor laser element having the strain-induced exciton response layer according to claim 1, wherein the electron blocking layer (105) is one or a combination of two or more of GaN, alGaN, alInGaN, alN, alInN, and has a thickness of 20 to 1000nm.

7. The semiconductor with strain-induced exciton response layer of claim 1The laser element is characterized in that the substrate (100) is sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire-SiO 2 composite substrate, a sapphire-AlN composite substrate, a sapphire-SiNx, a sapphire-SiO 2-SiNx composite substrate, or magnesia-alumina spinel MgAl ₂ O ₄ 、MgO、ZnO、ZrB ₂ 、LiAlO ₂ And LiGaO ₂ Any one of the composite substrates.

8. The semiconductor laser device having the strain-induced exciton response layer as claimed in claim 1, wherein the lower confinement layer (101) is an AlGaN layer having a thickness of 50 to 5000nm and a si doping concentration of 1E18 to 1E20cm ^-3 The method comprises the steps of carrying out a first treatment on the surface of the The upper confinement layer (106) is AlInGaN layer with thickness of 50-5000nm and Si doping concentration of 1E18-1E20cm ^-3 The method comprises the steps of carrying out a first treatment on the surface of the The lower waveguide layer (102) is a GaN layer with the thickness of 50-1000nm; the upper waveguide layer (104) is an InGaN layer with the thickness of 50-1000nm; the active layer (103) is of a periodic structure consisting of a well layer and a barrier layer, the well layer is an InGaN well layer, the barrier layer is GaN, and the cycle number m is more than or equal to 4 and more than or equal to 1.

9. The semiconductor laser element with strain-inducing exciton response layer of claim 1, wherein the strain-inducing exciton response layer (107) is a specific structure formed by the following binary combination: KV (kilovolt) ₃ Sb ₅ /WSe ₂ ，KV ₃ Sb ₅ /ReO ₃ ，KV ₃ Sb ₅ /RbV ₃ Sb ₅ ，KV ₃ Sb ₅ /CsV ₃ Sb ₅ ，KV ₃ Sb ₅ /KSbO ₃ ，WSe ₂ /ReO ₃ ，WSe ₂ /RbV ₃ Sb ₅ ，WSe ₂ /CsV ₃ Sb ₅ ，WSe ₂ /KSbO ₃ ，ReO ₃ /RbV ₃ Sb ₅ ，ReO ₃ /CsV ₃ Sb ₅ ，ReO ₃ /KSbO ₃ ，RbV ₃ Sb ₅ /CsV ₃ Sb ₅ ，RbV ₃ Sb ₅ /KSbO ₃ ，CsV ₃ Sb ₅ /KSbO ₃ 。

10. The semiconductor laser element with strain-inducing exciton response layer of claim 1, wherein the strain-inducing exciton response layer (107) is a specific structure formed by the following ternary combination: KV (kilovolt) ₃ Sb ₅ /WSe ₂ /ReO ₃ ，KV ₃ Sb ₅ /WSe ₂ /RbV ₃ Sb ₅ ，KV ₃ Sb ₅ /WSe ₂ /CsV ₃ Sb ₅ ，KV ₃ Sb ₅ /WSe ₂ /KSbO ₃ ，KV ₃ Sb ₅ /ReO ₃ /RbV ₃ Sb ₅ ，KV ₃ Sb ₅ /ReO ₃ /CsV ₃ Sb ₅ ，

KV ₃ Sb ₅ /ReO ₃ /KSbO ₃ ，KV ₃ Sb ₅ /RbV ₃ Sb ₅ /CsV ₃ Sb ₅ ，KV ₃ Sb ₅ /RbV ₃ Sb ₅ /KSbO ₃ ，KV ₃ Sb ₅ /CsV ₃ Sb ₅ /KSbO ₃ ，WSe ₂ /ReO ₃ /RbV ₃ Sb ₅ ，WSe ₂ /ReO ₃ /CsV ₃ Sb ₅ ，

WSe ₂ /ReO ₃ /KSbO ₃ ，WSe ₂ /RbV ₃ Sb ₅ /CsV ₃ Sb ₅ ，WSe ₂ /RbV ₃ Sb ₅ /KSbO ₃ ，

WSe ₂ /CsV ₃ Sb ₅ /KSbO ₃ ，ReO ₃ /RbV ₃ Sb ₅ /CsV ₃ Sb ₅ ，ReO ₃ /RbV ₃ Sb ₅ /KSbO ₃ ，ReO ₃ /CsV ₃ Sb ₅ /KSbO ₃ ，RbV ₃ Sb ₅ /CsV ₃ Sb ₅ /KSbO ₃ 。

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