CN116470386A - Semiconductor laser element with electron spin state layer - Google Patents

Semiconductor laser element with electron spin state layer Download PDF

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Publication number
CN116470386A
CN116470386A CN202310471580.1A CN202310471580A CN116470386A CN 116470386 A CN116470386 A CN 116470386A CN 202310471580 A CN202310471580 A CN 202310471580A CN 116470386 A CN116470386 A CN 116470386A
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layer
vse
hfo
gete
electron spin
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李水清
王星河
陈婉君
胡志勇
蔡鑫
刘紫涵
张江勇
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Anhui Geen Semiconductor Co ltd
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Anhui Geen Semiconductor Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention provides a semiconductor laser element with an electron spin state layer, which relates to the technical field of semiconductor photoelectric devices and sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer from bottom to top.

Description

Semiconductor laser element with electron spin state layer
Technical Field
The invention relates to the technical field of semiconductor photoelectric devices, in particular to a semiconductor laser element provided with an electron spin state layer.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The laser has various types and various classification modes, and mainly comprises solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like. The laser is greatly different from the nitride semiconductor light-emitting diode, 1) the laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level; 2) The current density of the laser reaches KA/cm2, which is more than 2 orders of magnitude higher than that of the nitride light-emitting diode, so that stronger electron leakage, more serious Auger recombination, stronger polarization effect and more serious electron-hole mismatch are caused, and more serious efficiency attenuation drop effect is caused; 3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated; 4) The principle is different: the light emitting diode generates radiation composite luminescence by electron hole transition to a quantum well or a p-n junction under the action of external voltage, and the laser can perform lasing under the condition that the lasing condition is satisfied, the inversion distribution of carriers in an active area is required to be satisfied, stimulated radiation light oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss by satisfying a threshold condition, and finally laser is output. The nitride semiconductor laser has the following problems: 1) The internal lattice mismatch is large, the strain is large, the polarization effect is strong, and the QCSE quantum confinement Stark effect is strong, so that the improvement of the electric lasing gain of the laser is limited; 2) The absorption loss of the optical waveguide is high, inherent carbon impurities compensate acceptors in a p-type semiconductor, damage p-type and the like, the ionization rate of p-type doping is low, a large amount of unionized Mg acceptors impurities can cause the increase of internal optical loss, the refractive index dispersion of the laser is reduced along with the increase of wavelength, and the mode gain of the laser is reduced; the method comprises the steps of carrying out a first treatment on the surface of the 3) The thickness of the lower limiting layer is increased, so that the refractive index of the limiting layer can be reduced, but the thickness of the lower limiting layer is increased, so that the component regulation range is limited, and the problems of cracking, bending, quality reduction and the like are easily caused; meanwhile, leakage of the optical field mode to the substrate to form standing waves can lead to low substrate mode suppression efficiency and poor FFP quality of far-field images. 3) The p-type semiconductor has the advantages of large Mg acceptor activation energy and low ionization efficiency, the hole concentration is far lower than the electron concentration, the hole mobility is far lower than the electron mobility, the serious asymmetry mismatch of electron holes in a quantum well, electron leakage and carrier delocalization are caused, the hole transportation in the quantum well is more difficult, the carrier injection is uneven, the gain spectrum of the laser is widened, and the peak gain is reduced. 4) The valence band step difference of the laser is increased, the hole is more difficult to transport in the quantum well, the carrier injection is uneven, and the gain is uneven; after the laser is excited, the carrier concentration of the active region of the multiple quantum well is saturated, the bipolar conductivity effect is weakened, the series resistance of the laser is increased, and the voltage of the laser is increased.
Disclosure of Invention
The invention aims to provide a semiconductor laser element provided with an electron spin state layer, which solves the problems existing in the prior art.
A semiconductor laser element with electron spin state layer comprises substrate, lower limit layer, lower waveguide layer, active layer, upper waveguide layer, electron blocking layer, upper limit layer, and electron spin state layer between the active layer and upper waveguide layer and between the active layer and lower waveguide layer.
As a preferable technical scheme of the invention, the electron spin state layer is Hf 5 Zr 0.5 O 2 、HfO 2 、VSe 2 、Pb 2 Ir 2 O 7 、Bi 2 Ru 2 O 7 、Fe 3 GeTe 2 Any one or any combination of the above.
As a preferred technical scheme of the invention, any combination of the electron spin state layers comprises the following binary combination of structures such as heterojunction, superlattice, quantum well, core-shell structure, quantum dot and the like, but is not limited to the following structures: hf (Hf) 5 Zr 0.5 O 2 /HfO 2 ,Hf 5 Zr 0.5 O 2 /VSe 2 ,Hf 5 Zr 0.5 O 2 /Pb 2 Ir 2 O 7 ,Hf 5 Zr 0.5 O 2 /Bi 2 Ru 2 O 7 ,Hf 5 Zr 0.5 O 2 /Fe 3 GeTe 2 ,HfO 2 /VSe 2 ,HfO 2 /Pb 2 Ir 2 O 7 ,HfO 2 /Bi 2 Ru 2 O 7 ,HfO 2 /Fe 3 GeTe 2 ,VSe 2 /Pb 2 Ir 2 O 7 ,VSe 2 /Bi 2 Ru 2 O 7 ,VSe 2 /Fe 3 GeTe 2 ,Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 ,Pb 2 Ir 2 O 7 /Fe 3 GeTe 2 ,Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 。
As a preferred technical scheme of the invention, any combination of the electron spin state layers comprises the following ternary combination heterojunction, superlattice, quantum well, core-shell structure, quantum dot, two-dimensional Mo Erchao lattice and other structures, but is not limited to the following structures: hf (Hf) 5 Zr 0.5 O 2 /HfO 2 /VSe 2 ,Hf 5 Zr 0.5 O 2 /HfO 2 /Pb 2 Ir 2 O 7 ,Hf 5 Zr 0.5 O 2 /HfO 2 /Bi 2 Ru 2 O 7 ,Hf 5 Zr 0.5 O 2 /HfO 2 /Fe 3 GeTe 2 ,Hf 5 Zr 0.5 O 2 /VSe 2 /Pb 2 Ir 2 O 7 ,Hf 5 Zr 0.5 O 2 /VSe 2 /Bi 2 Ru 2 O 7 ,Hf 5 Zr 0.5 O 2 /VSe 2 /Fe 3 GeTe 2 ,Hf 5 Zr 0.5 O 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 ,Hf 5 Zr 0.5 O 2 /Pb 2 Ir 2 O 7 /Fe 3 GeTe 2 ,Hf 5 Zr 0.5 O 2 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 ,HfO 2 /VSe 2 /Pb 2 Ir 2 O 7 ,HfO 2 /VSe 2 /Bi 2 Ru 2 O 7 ,HfO 2 /VSe 2 /Fe 3 GeTe 2 ,HfO 2 /Pb 2 Ir 2 O 7 /Fe 3 GeTe 2 ,VSe 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 ,VSe 2 /Pb 2 Ir 2 O 7 /Fe 3 GeTe 2 ,VSe 2 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 ,Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 。
As a preferred technical scheme of the invention, any combination of the electron spin state layers comprises the following four-element combined structures including heterojunction, superlattice, quantum well, core-shell structure, quantum dot, two-dimensional Mo Erchao lattice and the like, but is not limited to the following structures: hf (Hf) 5 Zr 0.5 O 2 /HfO 2 /VSe 2 /Pb 2 Ir 2 O 7 ,Hf 5 Zr 0.5 O 2 /HfO 2 /VSe 2 /Bi 2 Ru 2 O 7 ,Hf 5 Zr 0.5 O 2 /HfO 2 /VSe 2 /Fe 3 GeTe 2 ,HfO 2 /VSe 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 ,HfO 2 /VSe 2 /Pb 2 Ir 2 O 7 /Fe 3 GeTe 2 ,Hf 5 Zr 0.5 O 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 ,HfO 2 /VSe 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 ,HfO 2 /VSe 2 /Pb 2 Ir 2 O 7 /Fe 3 GeTe 2 ,HfO 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 ,VSe 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 。
As a preferable technical scheme of the invention, any combination of the electron spin state layers comprises structures such as a heterojunction, a superlattice, a quantum well, a core-shell structure, a quantum dot, a two-dimensional Mo Erchao lattice and the like of five-element and six-element combination, but is not limited to the following structures of Hf 5 Zr 0.5 O 2 /HfO 2 /VSe 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 ,Hf 5 Zr 0.5 O 2 /HfO 2 /VSe 2 /Pb 2 Ir 2 O 7 /Fe 3 GeTe 2 ,Hf 5 Zr 0.5 O 2 /HfO 2 /VSe 2 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 ,Hf 5 Zr 0.5 O 2 /HfO 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 ,Hf 5 Zr 0.5 O 2 /VSe 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 ,HfO 2 /VSe 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 ,Hf 5 Zr 0.5 O 2 /HfO 2 /VSe 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 。
As a preferable technical scheme of the invention, electron spin state layers are arranged between the active layer and the upper wave layer and between the active layer and the lower wave guide layer, the electron spin state layers can inhibit electron spin polarization degree, reduce the ratio of opposite polarization states generated by electrons and holes in the spin polarization process, enhance the spin direction probability of the same polarization of electrons and holes, enhance the photon-generated carrier recombination probability, reduce the excitation threshold of the laser element, enhance the limiting factor, and improve the optical power and slope efficiency of the laser element.
As a preferable technical scheme of the invention, the thickness of the electron spin state regulating layer is 5-500 nm.
As a preferable technical scheme of the invention, the lower limiting layer is any one or any combination of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, the thickness is 50-5000 nm, and the doping concentration of Si is 1E 18-1E 20cm -3 。
As a preferable technical scheme of the invention, the lower waveguide layer and the upper waveguide layer are any one or any combination of GaN, inGaN, alInGaN, the thickness is 50-1000 nm, and the doping concentration of Si is 1E 16-5E 19cm -3 。
As a preferable technical scheme of the invention, the electron blocking layer and the upper limiting layer are any one or any combination of GaN, alGaN, alInGaN, alN, alInN, the thickness is 20-1000 nm, and the doping concentration of Mg is 1E 18-1E 20cm -3 。
As a preferred technical scheme of the invention, the active layer is a periodic structure composed of a well layer and a barrier layer, the well layer is an InGaN well layer, the barrier layer is any one or any combination of GaN, alInGaN, alGaN, alInN, and the cycle number of the active layer is m: 4. and m is more than or equal to 1.
As a preferable technical scheme of the invention, the substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, a sapphire/SiNx, a sapphire/SiO 2/SiNx composite substrate and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
Compared with the prior art, the invention has the beneficial effects that:
in the scheme of the invention:
compared with the prior art, the electron spin state layers are arranged between the active layer and the upper wave layer and between the active layer and the lower wave guide layer, so that electron spin polarization degree can be restrained, the ratio of opposite polarization states generated by electrons and holes in spin polarization process is reduced, the probability of the same polarization spin direction of the electrons and the holes is enhanced, the polarization effect of the active layer and the quantum confinement Stark effect are reduced, the recombination probability of photo-generated carriers is enhanced, hole injection efficiency and carrier injection uniformity are enhanced, bipolar conductivity is reduced, the carrier saturation problem after laser is improved, gain uniformity is improved, the excitation threshold value of a laser element is reduced, the limiting factor and peak gain are enhanced, and the light power and slope efficiency of the laser element are improved.
Drawings
Fig. 1 is a schematic structural diagram of a semiconductor laser device with an electron spin state layer according to the present invention.
The figures indicate:
100: a substrate; 101: a lower confinement layer; 102: a lower waveguide layer; 103: an active layer; 104: upper waveguide layer, 105: electron blocking layer, 106: upper confinement layer, 107: an electron spin state layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. It will be apparent that the described embodiments are some, but not all, embodiments of the invention.
Thus, the following detailed description of the embodiments of the invention is not intended to limit the scope of the invention, as claimed, but is merely representative of some embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, under the condition of no conflict, the embodiments of the present invention and the features and technical solutions in the embodiments may be combined with each other.
Example 1
Referring to fig. 1, the present embodiment provides a technical solution: a semiconductor laser element provided with an electron spin state layer comprises a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 in this order from bottom to top, and electron spin state layers 107 are provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.
The electron spin state layer 107 is Hf 5 Zr 0.5 O 2 、HfO 2 、VSe 2 、Pb 2 Ir 2 O 7 、Bi 2 Ru 2 O 7 、Fe 3 GeTe 2 Any one of the following.
An electron spin state layer 107 is disposed between the active layer 103 and the upper wave layer 104 and between the active layer 103 and the lower wave guide layer 102, the electron spin state layer 107 can inhibit the electron spin polarization degree, reduce the ratio of the electron and the hole in opposite polarization states in the spin polarization process, enhance the spin direction probability of the electron and the hole with the same polarization, enhance the photon-generated carrier recombination probability, reduce the excitation threshold of the laser element, enhance the limiting factor, and improve the optical power and the slope efficiency of the laser element.
The thickness of the electron spin state layer 107 is 5 to 500nm.
The lower limiting layer 101 is any one or any combination of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, the thickness is 50-5000 nm, and the doping concentration of Si is 1E 18-1E 20cm -3 ；
The saidThe lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of GaN, inGaN, alInGaN, the thickness is 50-1000 nm, and the doping concentration of Si is 1E 16-5E 19cm -3 ；
The electron blocking layer 105 and the upper limiting layer 106 are any one or any combination of GaN, alGaN, alInGaN, alN, alInN, the thickness is 20-1000 nm, and the doping concentration of Mg is 1E 18-1E 20cm -3 ；
The active layer 103 is a periodic structure formed by a well layer and a barrier layer, the well layer is an InGaN well layer, and the barrier layer is any one or any combination of GaN, alInGaN, alGaN, alInN;
the number of cycles of the active layer 103 is m: 4. and m is more than or equal to 1.
The substrate 100 comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, a sapphire/SiNx, a sapphire/SiO 2/SiNx composite substrate, and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
Example 2
Referring to fig. 1, the present embodiment provides a technical solution: a semiconductor laser element provided with an electron spin state layer comprises a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 in this order from bottom to top, and electron spin state layers 107 are provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.
An electron spin state layer 107 is disposed between the active layer 103 and the upper wave layer 104 and between the active layer 103 and the lower wave guide layer 102, the electron spin state layer 107 can inhibit the electron spin polarization degree, reduce the ratio of the electron and the hole in opposite polarization states in the spin polarization process, enhance the spin direction probability of the electron and the hole with the same polarization, enhance the photon-generated carrier recombination probability, reduce the excitation threshold of the laser element, enhance the limiting factor, and improve the optical power and the slope efficiency of the laser element.
The electron spinAny combination of state layers includes the following binary combinations of heterojunction, superlattice, quantum well, core-shell structure, quantum dot, etc. structures but is not limited to the following structures: hf (Hf) 5 Zr 0.5 O 2 /HfO 2 ,Hf 5 Zr 0.5 O 2 /VSe 2 ,Hf 5 Zr 0.5 O 2 /Pb 2 Ir 2 O 7 ,Hf 5 Zr 0.5 O 2 /Bi 2 Ru 2 O 7 ,Hf 5 Zr 0.5 O 2 /Fe 3 GeTe 2 ,HfO 2 /VSe 2 ,HfO 2 /Pb 2 Ir 2 O 7 ,HfO 2 /Bi 2 Ru 2 O 7 ,HfO 2 /Fe 3 GeTe 2 ,VSe 2 /Pb 2 Ir 2 O 7 ,VSe 2 /Bi 2 Ru 2 O 7 ,VSe 2 /Fe 3 GeTe 2 ,Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 ,Pb 2 Ir 2 O 7 /Fe 3 GeTe 2 ,Bi 2 Ru 2 O 7 /Fe 3 GeTe。
The thickness of the electron spin state layer 107 is 5 to 500nm.
The lower limiting layer 101 is any one or any combination of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, the thickness is 50-5000 nm, and the doping concentration of Si is 1E 18-1E 20cm -3 ；
The lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of GaN, inGaN, alInGaN, the thickness is 50-1000 nm, and the doping concentration of Si is 1E 16-5E 19cm -3 ；
The electron blocking layer 105 and the upper limiting layer 106 are any one or any combination of GaN, alGaN, alInGaN, alN, alInN, the thickness is 20-1000 nm, and the doping concentration of Mg is 1E 18-1E 20cm -3 ；
The active layer 103 is a periodic structure formed by a well layer and a barrier layer, the well layer is an InGaN well layer, and the barrier layer is any one or any combination of GaN, alInGaN, alGaN, alInN;
the number of cycles of the active layer 103 is m: 4. and m is more than or equal to 1.
The substrate 100 comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, a sapphire/SiNx, a sapphire/SiO 2/SiNx composite substrate, and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
Example 3
Referring to fig. 1, the present embodiment provides a technical solution: a semiconductor laser element provided with an electron spin state layer comprises a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 in this order from bottom to top, and electron spin state layers 107 are provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.
An electron spin state layer 107 is disposed between the active layer 103 and the upper wave layer 104 and between the active layer 103 and the lower wave guide layer 102, the electron spin state layer 107 can inhibit the electron spin polarization degree, reduce the ratio of the electron and the hole in opposite polarization states in the spin polarization process, enhance the spin direction probability of the electron and the hole with the same polarization, enhance the photon-generated carrier recombination probability, reduce the excitation threshold of the laser element, enhance the limiting factor, and improve the optical power and the slope efficiency of the laser element.
Any combination of the electron spin state layers 107 includes the following ternary combinations of heterojunction, superlattice, quantum well, core-shell structure, quantum dot, two-dimensional Mo Erchao lattice, etc., but is not limited to the following: hf (Hf) 5 Zr 0.5 O 2 /HfO 2 /VSe 2 ,Hf 5 Zr 0.5 O 2 /HfO 2 /Pb 2 Ir 2 O 7 ,Hf 5 Zr 0.5 O 2 /HfO 2 /Bi 2 Ru 2 O 7 ,Hf 5 Zr 0.5 O 2 /HfO 2 /Fe 3 GeTe 2 ,Hf 5 Zr 0.5 O 2 /VSe 2 /Pb 2 Ir 2 O 7 ,Hf 5 Zr 0.5 O 2 /VSe 2 /Bi 2 Ru 2 O 7 ,Hf 5 Zr 0.5 O 2 /VSe 2 /Fe 3 GeTe 2 ,Hf 5 Zr 0.5 O 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 ,Hf 5 Zr 0.5 O 2 /Pb 2 Ir 2 O 7 /Fe 3 GeTe 2 ,Hf 5 Zr 0.5 O 2 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 ,HfO 2 /VSe 2 /Pb 2 Ir 2 O 7 ,HfO 2 /VSe 2 /Bi 2 Ru 2 O 7 ,HfO 2 /VSe 2 /Fe 3 GeTe 2 ,HfO 2 /Pb 2 Ir 2 O 7 /Fe 3 GeTe 2 ,VSe 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 ,VSe 2 /Pb 2 Ir 2 O 7 /Fe 3 GeTe 2 ,VSe 2 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 ,Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 。
The thickness of the electron spin state layer 107 is 5 to 500nm.
The lower limiting layer 101 is any one or any combination of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, the thickness is 50-5000 nm, and the doping concentration of Si is 1E 18-1E 20cm -3 ；
The lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of GaN, inGaN, alInGaN, the thickness is 50-1000 nm, and the doping concentration of Si is 1E 16-5E 19cm -3 ；
The electron blocking layer 105 and the upper limiting layer 106 are any one or any combination of GaN, alGaN, alInGaN, alN, alInN, the thickness is 20-1000 nm, and the doping concentration of Mg is 1E 18-1E 20cm -3 ；
The active layer 103 is a periodic structure formed by a well layer and a barrier layer, the well layer is an InGaN well layer, and the barrier layer is any one or any combination of GaN, alInGaN, alGaN, alInN;
the number of cycles of the active layer 103 is m: 4. and m is more than or equal to 1.
The substrate 100 comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, a sapphire/SiNx, a sapphire/SiO 2/SiNx composite substrate, and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
Example 4
Referring to fig. 1, the present embodiment provides a technical solution: a semiconductor laser element provided with an electron spin state layer comprises a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 in this order from bottom to top, and electron spin state layers 107 are provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.
An electron spin state layer 107 is disposed between the active layer 103 and the upper wave layer 104 and between the active layer 103 and the lower wave guide layer 102, the electron spin state layer 107 can inhibit the electron spin polarization degree, reduce the ratio of the electron and the hole in opposite polarization states in the spin polarization process, enhance the spin direction probability of the electron and the hole with the same polarization, enhance the photon-generated carrier recombination probability, reduce the excitation threshold of the laser element, enhance the limiting factor, and improve the optical power and the slope efficiency of the laser element.
Any combination of the electron spin state layers 107 includes the following four-element heterojunction, superlattice, quantum well, core-shell structure, quantum dot, two-dimensional Mo Erchao lattice, etc. structures but are not limited to the following: hf (Hf) 5 Zr 0.5 O 2 /HfO 2 /VSe 2 /Pb 2 Ir 2 O 7 ,Hf 5 Zr 0.5 O 2 /HfO 2 /VSe 2 /Bi 2 Ru 2 O 7 ,Hf 5 Zr 0.5 O 2 /HfO 2 /VSe 2 /Fe 3 GeTe 2 ,HfO 2 /VSe 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 ,HfO 2 /VSe 2 /Pb 2 Ir 2 O 7 /Fe 3 GeTe 2 ,Hf 5 Zr 0.5 O 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 ,HfO 2 /VSe 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 ,HfO 2 /VSe 2 /Pb 2 Ir 2 O 7 /Fe 3 GeTe 2 ,HfO 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 ,VSe 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 。
Example 5
Referring to fig. 1, the present embodiment provides a technical solution: a semiconductor laser element provided with an electron spin state layer comprises a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 in this order from bottom to top, and electron spin state layers 107 are provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.
An electron spin state layer 107 is disposed between the active layer 103 and the upper wave layer 104 and between the active layer 103 and the lower wave guide layer 102, the electron spin state layer 107 can inhibit the electron spin polarization degree, reduce the ratio of the electron and the hole in opposite polarization states in the spin polarization process, enhance the spin direction probability of the electron and the hole with the same polarization, enhance the photon-generated carrier recombination probability, reduce the excitation threshold of the laser element, enhance the limiting factor, and improve the optical power and the slope efficiency of the laser element.
Any combination of the electron spin state layers 107 includes the following five-membered and six-membered heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, two-dimensional Mo Erchao lattices, and the like, but is not limited to the following structures:
Hf 5 Zr 0.5 O 2 /HfO 2 /VSe 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 ,Hf 5 Zr 0.5 O 2 /HfO 2 /VSe 2 /Pb 2 Ir 2 O 7 /Fe 3 GeTe 2 ,Hf 5 Zr 0.5 O 2 /HfO 2 /VSe 2 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 ,Hf 5 Zr 0.5 O 2 /HfO 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 ,Hf 5 Zr 0.5 O 2 /VSe 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 ,HfO 2 /VSe 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 ,Hf 5 Zr 0.5 O 2 /HfO 2 /VSe 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 。
the thickness of the electron spin state layer 107 is 5 to 500nm.
The lower limiting layer 101 is any one or any combination of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, the thickness is 50-5000 nm, and the doping concentration of Si is 1E 18-1E 20cm -3 ；
The lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of GaN, inGaN, alInGaN, the thickness is 50-1000 nm, and the doping concentration of Si is 1E 16-5E 19cm -3 ；
The electron blocking layer 105 and the upper limiting layer 106 are any one or any combination of GaN, alGaN, alInGaN, alN, alInN, the thickness is 20-1000 nm, and the doping concentration of Mg is 1E 18-1E 20cm -3 ；
The active layer 103 is a periodic structure formed by a well layer and a barrier layer, the well layer is an InGaN well layer, and the barrier layer is any one or any combination of GaN, alInGaN, alGaN, alInN;
the number of cycles of the active layer 103 is m: 4. and m is more than or equal to 1.
The substrate 100 comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, a sapphire/SiNx, a sapphire/SiO 2/SiNx composite substrate, and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
Experimental example 1:
green laser experiments were performed using the technique of example 1, with the electron spin state layer using Hf 5 Zr 0.5 O 2 Performing an experiment;
experimental example 2:
green laser experiments were performed using the technique of example 2, with the electron spin state layer employing Hf 5 Zr 0.5 O 2 /HfO 2 Performing an experiment;
experimental example 3:
green laser experiments were performed using the technique of example 3, with the electron spin state layer using Hf 5 Zr 0.5 O 2 /HfO 2 /VSe 2 Performing an experiment;
experimental example 4:
the green laser experiment was performed using the technique of example 4, the electron spin state layer using Hf 5 Zr 0.5 O 2 /HfO 2 /VSe 2 /Pb 2 Ir 2 O 7 Performing an experiment;
experimental example 5:
a green laser experiment was performed using the technique of example 5, with the electron spin state layer using Hf 5 Zr 0.5 O 2 /HfO 2 /VSe 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 Performing an experiment;
each item of data of experimental examples 1 to 5 is as follows:
green laser-item Experimental example 1 Experimental example 2 Experimental example 3 Experimental example 4 Experimental example 5 Average value of
Slope efficiency (W/A) 0.49 0.48 0.47 0.50 0.46 0.48
Threshold current Density (kA/cm) 2 ) 2.2 2.1 2.4 2.3 2.0 2.2
Optical power (W) 0.72 0.7 0.68 0.69 0.71 0.7
Limiting factor 1.68 1.69 1.71 1.70 1.72 1.7
External quantum efficiency 14.5 14.4 14.4 14.6 14.6 14.5
The average value of each data of experimental examples 1 to 5 and the comparative data of the conventional laser element are as follows:
green laser-item Conventional laser element The laser element of the invention Amplitude of variation
Slope efficiency (W/A) 0.33 0.48 45％
Threshold current density (kA/cm 2) 3.6 2.2 -39％
Optical power (W) 0.5 0.7 40％
Limiting factor 1.20％ 1.70％ 42％
External quantum efficiency 10.20％ 14.50％ 42％
The slope efficiency of the green laser element is improved from 0.33/A to 0.48W/A by 45%; the threshold current density is from 3.6kA/cm 2 Reduced to 2.2kA/cm 2 The optical power is reduced by 39%, and the optical power is increased from 0.5W to 0.7W by 40%; the limiting factor is improved from 1.20% to 1.70%, and 42% is improved; the external quantum efficiency is improved from 10.20% to 14.50%, and is improved by 42%.
Compared with the prior art, the electron spin state layers are arranged between the active layer and the upper wave layer and between the active layer and the lower wave guide layer, so that electron spin polarization degree can be restrained, the ratio of opposite polarization states generated by electrons and holes in spin polarization process is reduced, the probability of the same polarization spin direction of the electrons and the holes is enhanced, the polarization effect of the active layer and the quantum confinement Stark effect are reduced, the recombination probability of photo-generated carriers is enhanced, hole injection efficiency and carrier injection uniformity are enhanced, bipolar conductivity is reduced, the carrier saturation problem after laser is improved, gain uniformity is improved, the excitation threshold value of a laser element is reduced, the limiting factor and peak gain are enhanced, and the light power and slope efficiency of the laser element are improved.
The above embodiments are only for illustrating the present invention and not for limiting the technical solutions described in the present invention, and although the present invention has been described in detail in the present specification with reference to the above embodiments, the present invention is not limited to the above specific embodiments, and thus any modifications or equivalent substitutions are made to the present invention; all technical solutions and modifications thereof that do not depart from the spirit and scope of the invention are intended to be included in the scope of the appended claims.

Claims (10)

1. A semiconductor laser element provided with an electron spin state layer, comprising, in order from bottom to top, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), an electron blocking layer (105), an upper confinement layer (106), characterized in that: an electron spin state layer (107) is provided between the active layer (103) and the upper wave layer (104) and between the active layer (103) and the lower wave guide layer (102).
2. A semiconductor laser element provided with an electron spin state layer as claimed in claim 1, wherein said electron spin state layer (107) is Hf 5 Zr 0.5 O 2 、HfO 2 、VSe 2 、Pb 2 Ir 2 O 7 、Bi 2 Ru 2 O 7 、Fe 3 GeTe 2 Any one or any combination of the above.
3. A semiconductor provided with an electron spin state layer as claimed in claim 2A bulk laser element, wherein any combination of the electron spin state layers (107) includes the following binary combinations of heterojunction, superlattice, quantum well, core-shell structure, quantum dot, two-dimensional Mo Erchao lattice, and the like, but is not limited to the following: hf (Hf) 5 Zr 0.5 O 2 /HfO 2 ,Hf 5 Zr 0.5 O 2 /VSe 2 ,
Hf 5 Zr 0.5 O 2 /Pb 2 Ir 2 O 7 ,Hf 5 Zr 0.5 O 2 /Bi 2 Ru 2 O 7 ,Hf 5 Zr 0.5 O 2 /Fe 3 GeTe 2 ,HfO 2 /VSe 2 ,HfO 2 /Pb 2 Ir 2 O 7 ,
HfO 2 /Bi 2 Ru 2 O 7 ,HfO 2 /Fe 3 GeTe 2 ,VSe 2 /Pb 2 Ir 2 O 7 ,VSe 2 /Bi 2 Ru 2 O 7 ,VSe 2 /Fe 3 GeTe 2 ,Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 ,Pb 2 Ir 2 O 7 /Fe 3 GeTe 2 ,Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 。
4. A semiconductor laser element provided with an electron spin state layer according to claim 2, characterized in that any combination of the electron spin state layers (107) comprises the following ternary combinations of heterojunction, superlattice, quantum well, core-shell structure, quantum dot, two-dimensional Mo Erchao lattice and the like but is not limited to the following structures: hf (Hf) 5 Zr 0.5 O 2 /HfO 2 /VSe 2 ,Hf 5 Zr 0.5 O 2 /HfO 2 /Pb 2 Ir 2 O 7 ,Hf 5 Zr 0.5 O 2 /HfO 2 /Bi 2 Ru 2 O 7 ,Hf 5 Zr 0.5 O 2 /HfO 2 /Fe 3 GeTe 2 ,Hf 5 Zr 0.5 O 2 /VSe 2 /Pb 2 Ir 2 O 7 ,
Hf 5 Zr 0.5 O 2 /VSe 2 /Bi 2 Ru 2 O 7 ,Hf 5 Zr 0.5 O 2 /VSe 2 /Fe 3 GeTe 2 ,Hf 5 Zr 0.5 O 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 ,
Hf 5 Zr 0.5 O 2 /Pb 2 Ir 2 O 7 /Fe 3 GeTe 2 ,Hf 5 Zr 0.5 O 2 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 ,HfO 2 /VSe 2 /Pb 2 Ir 2 O 7 ,
HfO 2 /VSe 2 /Bi 2 Ru 2 O 7 ,HfO 2 /VSe 2 /Fe 3 GeTe 2 ,HfO 2 /Pb 2 Ir 2 O 7 /Fe 3 GeTe 2 ,VSe 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 ,VSe 2 /Pb 2 Ir 2 O 7 /Fe 3 GeTe 2 ,VSe 2 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 ,Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 。
5. A semiconductor laser element provided with an electron spin state layer according to claim 2, characterized in that any combination of the electron spin state layers (107) comprises the following four-element combination of heterojunction, superlattice, quantum well, core-shell structure, quantum dot, two-dimensional Mo Erchao lattice and the like but is not limited to the following structures: hf (Hf) 5 Zr 0.5 O 2 /HfO 2 /VSe 2 /Pb 2 Ir 2 O 7 ,
Hf 5 Zr 0.5 O 2 /HfO 2 /VSe 2 /Bi 2 Ru 2 O 7 ,Hf 5 Zr 0.5 O 2 /HfO 2 /VSe 2 /Fe 3 GeTe 2 ,HfO 2 /VSe 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 ,
HfO 2 /VSe 2 /Pb 2 Ir 2 O 7 /Fe 3 GeTe 2 ,Hf 5 Zr 0.5 O 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 ,HfO 2 /VSe 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 ,HfO 2 /VSe 2 /Pb 2 Ir 2 O 7 /Fe 3 GeTe 2 ,HfO 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 ,
VSe 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 。
6. A semiconductor laser device provided with an electron spin state layer according to claim 2, wherein any combination of the electron spin state layers (107) includes the following structures of five-membered and six-membered heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, two-dimensional Mo Erchao lattices, and the like, but is not limited to the following structures of Hf 5 Zr 0.5 O 2 /HfO 2 /VSe 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 ,Hf 5 Zr 0.5 O 2 /HfO 2 /VSe 2 /Pb 2 Ir 2 O 7 /Fe 3 GeTe 2 ,Hf 5 Zr 0.5 O 2 /HfO 2 /VSe 2 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 ,
Hf 5 Zr 0.5 O 2 /HfO 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 ,Hf 5 Zr 0.5 O 2 /VSe 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 ,HfO 2 /VSe 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 ,Hf 5 Zr 0.5 O 2 /HfO 2 /VSe 2 /Pb 2 Ir 2 O 7 /Bi 2 Ru 2 O 7 /Fe 3 GeTe 2 。
7. A semiconductor laser device provided with an electron spin state layer according to claim 1, wherein the electron spin state layer (107) suppresses the electron spin polarization degree, reduces the ratio of the electron and hole to generate opposite polarization states during spin polarization, enhances the probability of the same polarization spin direction of the electron and hole, enhances the probability of photo-generated carrier recombination, lowers the threshold of excitation of the laser device, enhances the confinement factor, and improves the optical power and slope efficiency of the laser device.
8. A semiconductor laser element provided with an electron spin state layer as claimed in claim 1, wherein the electron spin state layer (107) has a thickness of 5 to 500nm.
9. The semiconductor laser device provided with the electron spin state layer according to claim 1, wherein the lower confinement layer (101) is any one or any combination of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, has a thickness of 50 to 5000nm, and has a Si doping concentration of 1E18 to 1E20cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The lower waveguide layer (102) and the upper waveguide layer (104) are any one or any combination of GaN, inGaN, alInGaN, the thickness is 50-1000 nm, and the doping concentration of Si is 1E 16-5E 19cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The electron blocking layer (105) and the upper limiting layer (106) are any one or any combination of GaN, alGaN, alInGaN, alN, alInN, the thickness is 20-1000 nm, and the doping concentration of Mg is 1E 18-1E 20cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The active layer (103) is of a periodic structure composed of a well layer and a barrier layer, the well layer is an InGaN well layer, the barrier layer is any one or any combination of GaN, alInGaN, alGaN, alInN, and the cycle number of the active layer (103) is m: 4. and m is more than or equal to 1.
10. A semiconductor laser element provided with an electron spin state layer as claimed in claim 1, wherein said substrate (100) comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, a sapphire/SiNx, a sapphire/SiO 2/SiNx composite substrate, a magnesium aluminate spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
CN202310471580.1A 2023-04-27 2023-04-27 Semiconductor laser element with electron spin state layer Pending CN116470386A (en)

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