CN220272957U - Semiconductor laser element with polarization regulating layer - Google Patents
Semiconductor laser element with polarization regulating layer Download PDFInfo
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Abstract
The utility model provides a semiconductor laser element with a polarization regulation layer, which relates to the technical field of semiconductor photoelectric devices, and comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer from bottom to top, wherein the polarization regulation layer is arranged between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer; the polarization regulating layer can regulate and control the polarization field intensity of the active layer, reduce energy band bending, reduce QCSE quantum confinement Stark effect, reduce valence band order and hole potential barrier of the active layer, improve efficiency and injection uniformity of hole injection into the active layer, and improve gain and gain uniformity of the laser; meanwhile, current expansion and electron injection efficiency of the lower limiting layer and the lower waveguide layer are improved, electron leakage and carrier delocalization are reduced, limiting factors of the laser element are enhanced, internal loss of the laser element is reduced, lasing threshold is reduced, continuous oscillation is realized, and lasing power and slope efficiency of the laser element are improved.
Description
Technical Field
The utility model relates to the technical field of semiconductor photoelectric devices, in particular to a semiconductor laser element provided with a polarization regulating layer.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The laser has various types and various classification modes, and mainly comprises solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like. The laser is greatly different from the nitride semiconductor light-emitting diode, 1) the laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level; 2) The current density of the laser reaches KA/cm2, which is more than 2 orders of magnitude higher than that of the nitride light-emitting diode, so that stronger electron leakage, more serious Auger recombination, stronger polarization effect and more serious electron-hole mismatch are caused, and more serious efficiency attenuation drop effect is caused; 3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated; 4) The principle is different: the light emitting diode generates radiation composite luminescence by electron hole transition to a quantum well or a p-n junction under the action of external voltage, and the laser can perform lasing under the condition that the lasing condition is satisfied, the inversion distribution of carriers in an active area is required to be satisfied, stimulated radiation light oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss by satisfying a threshold condition, and finally laser is output. The nitride semiconductor laser has the following problems: 1) The lattice mismatch and strain of the active layer are greatly induced to generate a strong voltage electric polarization effect, a strong QCSE quantum confinement Stark effect is generated, the band-gap of the laser is increased, hole injection is inhibited, the hole is more difficult to transport in a quantum well, the carrier injection is uneven, the gain is uneven, and the improvement of the laser electric lasing gain is limited; 2) The quantum well polarization electric field promotes problems such as hole injection potential barrier, hole overflows an active layer, hole injection is uneven and efficiency is low, so that electron holes in the quantum well are seriously asymmetric and unmatched, electron leakage and carrier localization are caused, hole transportation in the quantum well is more difficult, carrier injection is uneven, gain is uneven, meanwhile, a laser gain spectrum is widened, peak gain is reduced, and laser threshold current is increased and slope efficiency is reduced.
Disclosure of Invention
The utility model aims to provide a semiconductor laser element provided with a polarization regulating layer, which solves the problems existing in the prior art.
The semiconductor laser element comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer from bottom to top, wherein the polarization regulating layer is arranged between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer.
As a preferable technical scheme of the utility model, the polarization regulating layer is CuCoP and Co 3 O 4 、LiClO 4 、Li 2 S 6 、CuMo 6 S 8 Any two or any combination of two or more cops.
As a preferred technical scheme of the utility model, any combination of the polarization control layers comprises the following binary heterojunction, superlattice, quantum well, core-shell structure, quantum dot and other structures, but is not limited to the following structures: cuCoP/Co 3 O 4 ,CuCoP/LiClO 4 ,CuCoP/Li 2 S 6 ,CuCoP/CuMo 6 S 8 ,CuCoP/CoP,Co 3 O 4 /LiClO 4 ,Co 3 O 4 /Li 2 S 6 ,Co 3 O 4 /CuMo 6 S 8 ,Co 3 O 4 /CoP,LiClO 4 /Li 2 S 6 ,LiClO 4 /CuMo 6 S 8 ,LiClO 4 /CoP,Li 2 S 6 /CuMo 6 S 8 ,Li 2 S 6 /CoP,CuMo 6 S 8 /CoP。
As a preferred technical scheme of the utility model, any combination of the polarization regulating layers comprises the structures of heterojunction, superlattice, quantum well, core-shell structure, quantum dot and the like of the following ternary combination, but is not limited to the following structures: cuCoP/Co 3 O 4 /LiClO 4 ,CuCoP/Co 3 O 4 /Li 2 S 6 ,CuCoP/Co 3 O 4 /CuMo 6 S 8 ,CuCoP/Co 3 O 4 /CoP,CuCoP/LiClO 4 /Li 2 S 6 ,CuCoP/LiClO 4 /CuMo 6 S 8 ,CuCoP/LiClO 4 /CoP,CuCoP/Li 2 S 6 /CuMo 6 S 8 ,CuCoP/Li 2 S 6 /CoP,CuCoP/CuMo 6 S 8 /CoP,Co 3 O 4 /LiClO 4 /Li 2 S 6 ,Co 3 O 4 /LiClO 4 /CuMo 6 S 8 ,Co 3 O 4 /LiClO 4 /CoP,Co 3 O 4 /Li 2 S 6 /CuMo 6 S 8 ,Co 3 O 4 /Li 2 S 6 /CoP,Co 3 O 4 /CuMo 6 S 8 /CoP,LiClO 4 /Li 2 S 6 /CuMo 6 S 8 ,LiClO 4 /Li 2 S 6 /CoP,LiClO 4 /CuMo 6 S 8 /CoP,Li 2 S 6 /CuMo 6 S 8 /CoP。
As a preferred technical scheme of the utility model, any combination of the polarization control layers comprises the following structures of heterojunction, superlattice, quantum well, core-shell structure, quantum dot and the like with quaternary combination, but is not limited to the following structures: cuCoP/Co 3 O 4 /LiClO 4 /Li 2 S 6 ,CuCoP/Co 3 O 4 /LiClO 4 /CuMo 6 S 8 ,CuCoP/Co 3 O 4 /LiClO 4 /CoP,CuCoP/LiClO 4 /Li 2 S 6 /CuMo 6 S 8 ,CuCoP/LiClO 4 /Li 2 S 6 /CoP,CuCoP/Li 2 S 6 /CuMo 6 S 8 /CoP,Co 3 O 4 /LiClO 4 /Li 2 S 6 /CuMo 6 S 8 ,Co 3 O 4 /LiClO 4 /Li 2 S 6 /CoP,Co 3 O 4 /Li 2 S 6 /CuMo 6 S 8 /CoP,LiClO 4 /Li 2 S 6 /CuMo 6 S 8 /CoP。
As a preferable technical scheme of the utility model, any combination of the polarization regulating layers comprises the following structures including, but not limited to, five-membered and six-membered heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots and the like
CuCoP/Co 3 O 4 /LiClO 4 /Li 2 S 6 /CuMo 6 S 8 ,CuCoP/Co 3 O 4 /LiClO 4 /Li 2 S 6 /CoP,
CuCoP/Co 3 O 4 /LiClO 4 /CuMo 6 S 8 /CoP,CuCoP/Co 3 O 4 /Li 2 S 6 /CuMo 6 S 8 /CoP,
CuCoP/LiClO 4 /Li 2 S 6 /CuMo 6 S 8 /CoP,Co 3 O 4 /LiClO 4 /Li 2 S 6 /CuMo 6 S 8 /CoP,
CuCoP/Co 3 O 4 /LiClO 4 /Li 2 S 6 /CuMo 6 S 8 /CoP。
As a preferable technical scheme of the utility model, a polarization regulating layer is arranged between the active layer and the upper wave layer and between the active layer and the lower wave guide layer, the polarization regulating layer can regulate the polarization field intensity, reduce energy band bending, reduce QCSE quantum confinement Stark effect, improve current expansion and electron injection efficiency of the lower confinement layer and the lower wave guide layer, enhance confinement factors of the laser element, reduce internal loss of the laser element, reduce lasing threshold, realize continuous oscillation, and improve lasing power and slope efficiency of the laser element.
As a preferable technical scheme of the utility model, the thickness of the polarization control layer (107) is 5-500 nm.
As a preferable technical scheme of the utility model, the lower limiting layer (101), the lower waveguide layer (102), the active layer (103), the upper waveguide layer (104), the electron blocking layer (105) and the upper limiting layer (106) comprise GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of multiple elements of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP; the semiconductor laser element comprises a semiconductor deep ultraviolet laser with the light emitting wavelength of 200 nm-300 nm, a semiconductor ultraviolet laser with the light emitting wavelength of 300 nm-420 nm, a semiconductor blue laser with the light emitting wavelength of 420 nm-480 nm, a semiconductor green laser with the light emitting wavelength of 500 nm-550 nm, a semiconductor red light and yellow light laser with the light emitting wavelength of 550 nm-700 nm,a semiconductor infrared laser with the light-emitting wavelength of 800 nm-1000 nm and a semiconductor far infrared laser with the light-emitting wavelength of 1000 nm-1600 nm.
As a preferable technical scheme of the utility model, the substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, a sapphire/SiNx, a sapphire/SiO 2/SiNx composite substrate and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
Compared with the prior art, the utility model has the beneficial effects that:
in the scheme of the utility model:
compared with the prior art, the polarization regulating layers are arranged between the active layer and the upper wave layer and between the active layer and the lower wave guide layer, the polarization field intensity of the active layer can be regulated and controlled by the polarization regulating layers, the energy band bending is reduced, the Stark effect limited by QCSE quantum is reduced, the valence band order and the hole potential barrier of the active layer are reduced, the efficiency and the injection uniformity of hole injection into the active layer are improved, and the gain uniformity of a laser are improved; meanwhile, current expansion and electron injection efficiency of the lower limiting layer and the lower waveguide layer are improved, electron leakage and carrier delocalization are reduced, limiting factors of the laser element are enhanced, internal loss of the laser element is reduced, lasing threshold is reduced, continuous oscillation is realized, and lasing power and slope efficiency of the laser element are improved.
Drawings
Fig. 1 is a schematic structural diagram of a semiconductor laser device with a polarization adjustment layer according to the present utility model.
The figures indicate:
100: a substrate; 101: a lower confinement layer; 102: a lower waveguide layer; 103: an active layer; 104: upper waveguide layer, 105: electron blocking layer, 106: upper confinement layer, 107: and a polarization control layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present utility model more clear, the technical solutions of the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings. It will be apparent that the described embodiments are some, but not all, embodiments of the utility model.
Thus, the following detailed description of the embodiments of the utility model is not intended to limit the scope of the utility model, as claimed, but is merely representative of some embodiments of the utility model. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
It should be noted that, under the condition of no conflict, the embodiments of the present utility model and the features and technical solutions in the embodiments may be combined with each other.
Example 1
Referring to fig. 1, the present embodiment provides a technical solution: a semiconductor laser element provided with a polarization control layer comprises a substrate 100, a lower limiting layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper limiting layer 106 in this order from bottom to top, and a polarization control layer 107 is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.
The polarization control layer 107 is CuCoP, co 3 O 4 、LiClO 4 、Li 2 S 6 、CuMo 6 S 8 Any two of CoP.
A polarization regulating layer 107 is arranged between the active layer 103 and the upper wave layer 104 and between the active layer 103 and the lower wave guide layer 102, the polarization regulating layer 107 can regulate the polarization field intensity of the active layer, reduce energy band bending, reduce QCSE quantum confinement Stark effect, reduce valence band step and hole barrier of the active layer, improve the efficiency and injection uniformity of hole injection into the active layer, and improve the gain and gain uniformity of the laser; meanwhile, current expansion and electron injection efficiency of the lower limiting layer and the lower waveguide layer are improved, electron leakage and carrier delocalization are reduced, limiting factors of the laser element are enhanced, internal loss of the laser element is reduced, lasing threshold is reduced, continuous oscillation is realized, and lasing power and slope efficiency of the laser element are improved.
The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 comprise GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of multiple elements of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP.
The substrate 100 comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, a sapphire/SiNx, a sapphire/SiO 2/SiNx composite substrate, and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
Example 2
Referring to fig. 1, the present embodiment provides a technical solution: a semiconductor laser element provided with a polarization control layer comprises a substrate 100, a lower limiting layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper limiting layer 106 in this order from bottom to top, and a polarization control layer 107 is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.
A polarization regulating layer 107 is arranged between the active layer 103 and the upper wave layer 104 and between the active layer 103 and the lower wave guide layer 102, the polarization regulating layer 107 can regulate the polarization field intensity of the active layer, reduce energy band bending, reduce QCSE quantum confinement Stark effect, reduce valence band step and hole barrier of the active layer, improve the efficiency and injection uniformity of hole injection into the active layer, and improve the gain and gain uniformity of the laser; meanwhile, current expansion and electron injection efficiency of the lower limiting layer and the lower waveguide layer are improved, electron leakage and carrier delocalization are reduced, limiting factors of the laser element are enhanced, internal loss of the laser element is reduced, lasing threshold is reduced, continuous oscillation is realized, and lasing power and slope efficiency of the laser element are improved.
Any combination of the polarization regulating layers comprises the following binary combination of structures such as heterojunction, superlattice, quantum well, core-shell structure, quantum dot and the like, but is not limited to the following structures: cuCoP/Co 3 O 4 ,CuCoP/LiClO 4 ,CuCoP/Li 2 S 6 ,CuCoP/CuMo 6 S 8 ,CuCoP/CoP,Co 3 O 4 /LiClO 4 ,Co 3 O 4 /Li 2 S 6 ,Co 3 O 4 /CuMo 6 S 8 ,Co 3 O 4 /CoP,LiClO 4 /Li 2 S 6 ,LiClO 4 /CuMo 6 S 8 ,LiClO 4 /CoP,Li 2 S 6 /CuMo 6 S 8 ,Li 2 S 6 /CoP,CuMo 6 S 8 /CoP。
The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 comprise GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of multiple elements of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP.
The substrate 100 comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, a sapphire/SiNx, a sapphire/SiO 2/SiNx composite substrate, and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
Example 3
Referring to fig. 1, the present embodiment provides a technical solution: a semiconductor laser element with polarization regulating layer comprises substrate 100, lower confinement layer 101, lower waveguide layer 102, active layer 103, upper waveguide layer 104, electron blocking layer 105, upper confinement layer 106 sequentially from bottom to top, and polarization regulating layers are arranged between active layer 103 and upper waveguide layer 104 and between active layer 103 and lower waveguide layer 102.
A polarization regulating layer 107 is arranged between the active layer 103 and the upper wave layer 104 and between the active layer 103 and the lower wave guide layer 102, the polarization regulating layer 107 can regulate the polarization field intensity of the active layer, reduce energy band bending, reduce QCSE quantum confinement Stark effect, reduce valence band step and hole barrier of the active layer, improve the efficiency and injection uniformity of hole injection into the active layer, and improve the gain and gain uniformity of the laser; meanwhile, current expansion and electron injection efficiency of the lower limiting layer and the lower waveguide layer are improved, electron leakage and carrier delocalization are reduced, limiting factors of the laser element are enhanced, internal loss of the laser element is reduced, lasing threshold is reduced, continuous oscillation is realized, and lasing power and slope efficiency of the laser element are improved.
Any combination of polarization modulating layers 107 includes the following ternary combinations of heterojunction, superlattice, quantum well, core-shell structure, quantum dot, etc., but is not limited to the following: cuCoP/Co 3 O 4 /LiClO 4 ,CuCoP/Co 3 O 4 /Li 2 S 6 ,CuCoP/Co 3 O 4 /CuMo 6 S 8 ,CuCoP/Co 3 O 4 /CoP,CuCoP/LiClO 4 /Li 2 S 6 ,CuCoP/LiClO 4 /CuMo 6 S 8 ,CuCoP/LiClO 4 /CoP,CuCoP/Li 2 S 6 /CuMo 6 S 8 ,CuCoP/Li 2 S 6 /CoP,CuCoP/CuMo 6 S 8 /CoP,Co 3 O 4 /LiClO 4 /Li 2 S 6 ,Co 3 O 4 /LiClO 4 /CuMo 6 S 8 ,Co 3 O 4 /LiClO 4 /CoP,Co 3 O 4 /Li 2 S 6 /CuMo 6 S 8 ,Co 3 O 4 /Li 2 S 6 /CoP,Co 3 O 4 /CuMo 6 S 8 /CoP,LiClO 4 /Li 2 S 6 /CuMo 6 S 8 ,LiClO 4 /Li 2 S 6 /CoP,LiClO 4 /CuMo 6 S 8 /CoP,Li 2 S 6 /CuMo 6 S 8 /CoP。
The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 comprise GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Arbitrary of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaPOr any combination of multiple elements.
The substrate 100 comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, a sapphire/SiNx, a sapphire/SiO 2/SiNx composite substrate, and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
Example 4
Referring to fig. 1, the present embodiment provides a technical solution: a semiconductor laser element provided with a polarization control layer comprises a substrate 100, a lower limiting layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper limiting layer 106 in this order from bottom to top, and a polarization control layer 107 is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.
A polarization regulating layer 107 is arranged between the active layer 103 and the upper wave layer 104 and between the active layer 103 and the lower wave guide layer 102, the polarization regulating layer 107 can regulate the polarization field intensity of the active layer, reduce energy band bending, reduce QCSE quantum confinement Stark effect, reduce valence band step and hole barrier of the active layer, improve the efficiency and injection uniformity of hole injection into the active layer, and improve the gain and gain uniformity of the laser; meanwhile, current expansion and electron injection efficiency of the lower limiting layer and the lower waveguide layer are improved, electron leakage and carrier delocalization are reduced, limiting factors of the laser element are enhanced, internal loss of the laser element is reduced, lasing threshold is reduced, continuous oscillation is realized, and lasing power and slope efficiency of the laser element are improved.
Any combination of polarization modulating layers 107 includes the following four-element heterojunction, superlattice, quantum well, core-shell structure, quantum dot, etc. structures but is not limited to the following: cuCoP/Co 3 O 4 /LiClO 4 /Li 2 S 6 ,CuCoP/Co 3 O 4 /LiClO 4 /CuMo 6 S 8 ,CuCoP/Co 3 O 4 /LiClO 4 /CoP,CuCoP/LiClO 4 /Li 2 S 6 /CuMo 6 S 8 ,CuCoP/LiClO 4 /Li 2 S 6 /CoP,CuCoP/Li 2 S 6 /CuMo 6 S 8 /CoP,Co 3 O 4 /LiClO 4 /Li 2 S 6 /CuMo 6 S 8 ,Co 3 O 4 /LiClO 4 /Li 2 S 6 /CoP,Co 3 O 4 /Li 2 S 6 /CuMo 6 S 8 /CoP,LiClO 4 /Li 2 S 6 /CuMo 6 S 8 /CoP。
Example 5
Referring to fig. 1, the present embodiment provides a technical solution: a semiconductor laser element provided with a polarization control layer comprises a substrate 100, a lower limiting layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper limiting layer 106 in this order from bottom to top, and a polarization control layer 107 is provided between the active layer 103 and the upper waveguide layer 104 and between the active layer 103 and the lower waveguide layer 102.
A polarization regulating layer 107 is arranged between the active layer 103 and the upper wave layer 104 and between the active layer 103 and the lower wave guide layer 102, the polarization regulating layer 107 can regulate the polarization field intensity of the active layer, reduce energy band bending, reduce QCSE quantum confinement Stark effect, reduce valence band step and hole barrier of the active layer, improve the efficiency and injection uniformity of hole injection into the active layer, and improve the gain and gain uniformity of the laser; meanwhile, current expansion and electron injection efficiency of the lower limiting layer and the lower waveguide layer are improved, electron leakage and carrier delocalization are reduced, limiting factors of the laser element are enhanced, internal loss of the laser element is reduced, lasing threshold is reduced, continuous oscillation is realized, and lasing power and slope efficiency of the laser element are improved.
Any combination of the polarization control layers 107 includes the following structures of five-membered and six-membered heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots and the like, but is not limited to the following structures CuCoP/Co 3 O 4 /LiClO 4 /Li 2 S 6 /CuMo 6 S 8 ,CuCoP/Co 3 O 4 /LiClO 4 /Li 2 S 6 /CoP,CuCoP/Co 3 O 4 /LiClO 4 /CuMo 6 S 8 /CoP,
CuCoP/Co 3 O 4 /Li 2 S 6 /CuMo 6 S 8 /CoP,CuCoP/LiClO 4 /Li 2 S 6 /CuMo 6 S 8 /CoP,
Co 3 O 4 /LiClO 4 /Li 2 S 6 /CuMo 6 S 8 /CoP,CuCoP/Co 3 O 4 /LiClO 4 /Li 2 S 6 /CuMo 6 S 8 /CoP。
The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 comprise GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of multiple elements of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP.
The substrate 100 comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, a sapphire/SiNx, a sapphire/SiO 2/SiNx composite substrate, and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
Experimental example 1:
the green laser experiment was performed using the technical scheme of example 1, and the polarization control layer was performed using CuCoP;
experimental example 2:
green laser experiments were performed using the technical scheme of example 2, with a polarization controlling layer of CuCoP/Co 3 O 4 Performing an experiment;
experimental example 3:
green laser experiments were performed using the technical scheme of example 3, with a polarization controlling layer of CuCoP/Co 3 O 4 /LiClO 48 Performing an experiment;
experimental example 4:
green laser experiments were performed using the technical scheme of example 4, with a polarization controlling layer of CuCoP/Co 3 O 4 /LiClO 4 /Li 2 S 6 Performing an experiment;
experimental example 5:
green laser experiments were performed using the technical scheme of example 5, with a polarization controlling layer of CuCoP/Co 3 O 4 /LiClO 4 /Li 2 S 6 /CuMo 6 S 8 Performing an experiment;
each item of data of experimental examples 1 to 5 is as follows:
the average value of each data of experimental examples 1 to 5 and the comparative data of the conventional laser element are as follows:
the slope efficiency of the green laser element is improved from 0.64/A to 0.98W/A by 53%; the threshold current density is from 1.53kA/cm 2 Reduced to 1.09kA/cm 2 The optical power is increased from 0.71W to 1.08W and the limiting factor is increased from 1.78% to 2.54%.
Compared with the prior art, the polarization regulating layers are arranged between the active layer and the upper wave layer and between the active layer and the lower wave guide layer, the polarization field intensity of the active layer can be regulated and controlled by the polarization regulating layers, the energy band bending is reduced, the Stark effect limited by QCSE quantum is reduced, the valence band order and the hole potential barrier of the active layer are reduced, the efficiency and the injection uniformity of hole injection into the active layer are improved, and the gain uniformity of a laser are improved; meanwhile, current expansion and electron injection efficiency of the lower limiting layer and the lower waveguide layer are improved, electron leakage and carrier delocalization are reduced, limiting factors of the laser element are enhanced, internal loss of the laser element is reduced, lasing threshold is reduced, continuous oscillation is realized, and lasing power and slope efficiency of the laser element are improved.
The above embodiments are only for illustrating the present utility model and not for limiting the technical solutions described in the present utility model, and although the present utility model has been described in detail in the present specification with reference to the above embodiments, the present utility model is not limited to the above specific embodiments, and thus any modifications or equivalent substitutions are made to the present utility model; all technical solutions and modifications thereof that do not depart from the spirit and scope of the utility model are intended to be included in the scope of the appended claims.
Claims (2)
1. The utility model provides a semiconductor laser element with polarization regulation and control layer, includes substrate (100), lower limiting layer (101), lower waveguide layer (102) from bottom to top in proper order, active layer (103), upper waveguide layer (104), electron blocking layer (105), upper limiting layer (106), its characterized in that: a polarization regulating layer (107) is arranged between the active layer (103) and the upper wave layer (104) and between the active layer (103) and the lower wave guide layer (102).
2. A semiconductor laser element provided with a polarization controlling layer as claimed in claim 1, wherein the thickness of the polarization controlling layer (107) is 5 to 500nm.
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