CN116826525A - Semiconductor laser - Google Patents
Semiconductor laser Download PDFInfo
- Publication number
- CN116826525A CN116826525A CN202310782569.7A CN202310782569A CN116826525A CN 116826525 A CN116826525 A CN 116826525A CN 202310782569 A CN202310782569 A CN 202310782569A CN 116826525 A CN116826525 A CN 116826525A
- Authority
- CN
- China
- Prior art keywords
- layer
- equal
- stark effect
- semiconductor
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 230000005699 Stark effect Effects 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 230000000903 blocking effect Effects 0.000 claims abstract description 8
- 230000003247 decreasing effect Effects 0.000 claims description 23
- 230000001629 suppression Effects 0.000 claims description 22
- 229910052594 sapphire Inorganic materials 0.000 claims description 12
- 239000010980 sapphire Substances 0.000 claims description 12
- 239000002131 composite material Substances 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 7
- 230000005764 inhibitory process Effects 0.000 claims description 6
- 229910010093 LiAlO Inorganic materials 0.000 claims description 3
- 229910020068 MgAl Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 230000007547 defect Effects 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 229910052596 spinel Inorganic materials 0.000 claims description 3
- 239000011029 spinel Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 7
- 238000002347 injection Methods 0.000 abstract description 5
- 239000007924 injection Substances 0.000 abstract description 5
- 230000010287 polarization Effects 0.000 abstract description 5
- 230000002401 inhibitory effect Effects 0.000 abstract 2
- 230000005855 radiation Effects 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000001819 mass spectrum Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000005701 quantum confined stark effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000005472 transition radiation Effects 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The application provides a semiconductor laser, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer which are sequentially arranged from bottom to top, wherein a quantum limiting Stark effect inhibiting layer is arranged between the active layer and the lower waveguide layer, the quantum limiting Stark effect inhibiting layer is provided with a Si doping concentration peak and an In element intensity valley, and the position of the Si doping concentration peak is the same as that of the In element intensity valley, or the position deviation is +/-5 nm. The application suppresses and relieves the quantum confinement Stark effect, reduces the piezoelectric polarization effect, reduces the energy band inclination of the active layer, reduces the valence band order, improves the efficiency and the transport capacity of hole injection into the active layer, improves the carrier uniformity and the lasing gain uniformity of the laser, and improves the lasing gain and the slope efficiency of the laser.
Description
Technical Field
The application relates to the field of semiconductor photoelectric devices, in particular to a semiconductor laser.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The laser has various types and various classification modes, and mainly comprises solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like.
The laser is largely different from the nitride semiconductor light emitting diode:
1) The laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level;
2) Use of lasers current densities up to KA/cm 2 More than 2 orders of magnitude higher than nitride light emitting diodes, thereby causing stronger electron leakage, more severe auger recombination, stronger polarization effect, more severe electron-hole mismatch, resulting in more severe efficiency decay Droop effect;
3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated;
4) The principle is different: the light emitting diode generates radiation composite luminescence by electron hole transition to a quantum well or a p-n junction under the action of external voltage, and the laser can perform lasing under the condition that the lasing condition is satisfied, the inversion distribution of carriers in an active area is required to be satisfied, stimulated radiation light oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss by satisfying a threshold condition, and finally laser is output.
The nitride semiconductor laser has the following problems: the lattice mismatch and strain of the active layer are greatly induced to generate a strong voltage electric polarization effect, a strong quantum confinement Stark effect QCSE is generated, the valence band step difference of the laser is increased, the injection and transportation of holes in a quantum well are more difficult, the overlapping probability of an electron-hole wave function is reduced, the carrier injection is uneven, the gain is uneven, the peak gain is reduced, the threshold current of the laser is increased, the slope efficiency is reduced, and the improvement of the electric lasing gain of the laser is limited.
Disclosure of Invention
In order to solve one of the above technical problems, the present application provides a semiconductor laser.
The embodiment of the application provides a semiconductor laser, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer which are sequentially arranged from bottom to top, wherein a quantum limiting Stark effect inhibition layer is arranged between the active layer and the lower waveguide layer, the quantum limiting Stark effect inhibition layer is provided with a Si doping concentration peak and an In element intensity valley, and the position of the Si doping concentration peak is the same as the position of the In element intensity valley, or the position deviation is +/-5 nm.
Preferably, the Si doping concentration of the Si doping concentration peak position of the quantum confinement Stark effect suppressing layer is 1E19cm -3 To 1E20 cm -3 The In element intensity at the In element intensity valley position is 1E17 (a.u.) to 1E18 (a.u.).
Preferably, the In element intensity In the direction of the active layer vector quantum confinement stark effect suppression layer is In a decreasing trend, and the decreasing angle of the In element intensity is alpha: alpha is more than or equal to 45 and less than or equal to 90 degrees; the lower waveguide layer has a decreasing trend towards the In element strength of the quantum confinement Stark effect inhibition layer direction, and the decreasing angle of the In element strength is beta: beta is more than or equal to 45 degrees and less than or equal to 90 degrees.
Preferably, the In/Al element ratio In the active layer vector quantum confinement stark effect suppression layer direction is In a decreasing trend, and the decreasing angle of the In/Al element ratio is gamma: gamma is more than or equal to 35 and less than or equal to 90 degrees; the lower waveguide layer has a decreasing trend towards the In/Al element proportion In the direction of the quantum confinement Stark effect inhibition layer, and the decreasing angle of the In/Al element proportion is theta: θ is more than or equal to 35 and less than or equal to 90 degrees.
Preferably, the In/Al element intensity ratio of the quantum confinement stark effect suppression layer is 10 to 100, the In/Al element intensity ratio of the active layer is 1E4 to 5E5, and the ratio of the In/Al element intensity ratio of the active layer to the In/Al element intensity ratio of the quantum confinement stark effect suppression layer is k: k is more than or equal to 1E3 and less than or equal to 5E4.
Preferably, the quantum confinement stark effect suppression layer is one or a combination of GaN and InGaN, and has a thickness of 20 to 500 a.
Preferably, the defect density of the quantum confinement Stark effect suppressing layer and the active layer is less than or equal to 1E6cm -2 。
Preferably, the active layer is formed by a well layer and a barrier layer and has a periodic structure, and the period is m: m is more than or equal to 1 and less than or equal to 3, and the well layer is In x Ga 1-x N, a thickness of 20 to 35 a; the barrier layer is GaN and has a thickness of 35 to 60 angstroms.
Preferably, the lower confinement layer, the lower waveguide layer, the upper waveguide layer, the electron blocking layer and the upper confinement layer comprise GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP;
the substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
Preferably, the semiconductor laser is one of a semiconductor deep ultraviolet laser with an emission wavelength of 200nm to 300nm, a semiconductor ultraviolet laser with an emission wavelength of 300nm to 420nm, a semiconductor blue laser with an emission wavelength of 420nm to 480nm, a semiconductor green laser with an emission wavelength of 500nm to 550nm, a semiconductor red and yellow laser with an emission wavelength of 550nm to 700nm, a semiconductor infrared laser with an emission wavelength of 800nm to 1000nm, or a semiconductor far infrared laser with an emission wavelength of 1000nm to 1600 nm.
The beneficial effects of the application are as follows: the quantum confinement Stark effect suppression layer is arranged between the active layer and the lower waveguide layer, is designed to have Si doping concentration peaks and In element intensity valleys, and limits the position relation of the Si doping concentration peaks and the In element intensity valleys so as to suppress and alleviate the quantum confinement Stark effect, reduce the piezoelectric polarization effect, reduce the energy band inclination of the active layer, reduce the valence band order, improve the efficiency and the transport capacity of hole injection into the active layer, improve the carrier uniformity and the laser excitation gain uniformity of the laser, and improve the laser excitation gain and slope efficiency of the laser.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute a limitation on the application. In the drawings:
fig. 1 is a schematic structural diagram of a semiconductor laser according to an embodiment of the present application;
FIG. 2 is a TEM transmission electron microscope of a semiconductor laser according to an embodiment of the present application;
FIG. 3 is a SIMS secondary ion mass spectrum of a semiconductor laser according to an embodiment of the present application;
fig. 4 is a partially amplified SIMS secondary ion mass spectrum of a semiconductor laser according to an embodiment of the present application.
Reference numerals:
100. a substrate, 101, a lower confinement layer, 102, a lower waveguide layer, 103, an active layer, 104, an upper waveguide layer, 105, an electron blocking layer, 106, an upper confinement layer, 107, a quantum confinement stark effect suppression layer; 103a, well layers, 103b, barrier layers.
Detailed Description
In order to make the technical solutions and advantages of the embodiments of the present application more apparent, the following detailed description of exemplary embodiments of the present application is provided in conjunction with the accompanying drawings, and it is apparent that the described embodiments are only some embodiments of the present application and not exhaustive of all embodiments. It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other.
As shown in fig. 1 to 4, the present embodiment proposes a semiconductor laser including a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106, which are disposed in this order from bottom to top. Wherein a quantum confinement stark effect suppressing layer 107 is provided between the active layer 103 and the lower waveguide layer 102.
Specifically, in this embodiment, a quantum confinement stark effect suppressing layer 107 is disposed between the active layer 103 and the lower waveguide layer 102. The quantum confinement stark effect suppression layer 107 is one or a combination of GaN and InGaN and has a thickness between 20 and 500 a. The quantum confinement stark effect suppressing layer 107 has a Si doping concentration peak and an In element intensity valley, and the Si doping concentration peak position is the same as the In element intensity valley position.
More specifically, as shown In fig. 3 and 4, in the present embodiment, the quantum confinement stark effect suppressing layer 107 has a Si doping concentration peak and an In element intensity valley. Wherein the Si doping concentration at the peak position of the Si doping concentration is 1E19cm -3 To 1E20 cm -3 The In element intensity at the In element intensity valley position is 1E17 (a.u.) to 1E18 (a.u.). Meanwhile, the Si doping concentration peak position of the quantum confinement stark effect suppressing layer 107 is the same as the In element intensity valley position, or the positional deviation is within ±5 nm. The characteristics and the positional relationship of the Si doping concentration peak and the In element intensity valley of the quantum confinement stark effect suppression layer 107 can suppress and alleviate the quantum confinement stark effect, reduce the piezoelectric polarization effect, reduce the energy band tilt of the active layer 103, reduce the valence band order, improve the efficiency and the transport capability of hole injection into the active layer 103, improve the carrier uniformity and the lasing gain uniformity of the laser, and improve the lasing gain and slope efficiency of the laser.
Further, in this embodiment, a steep In element intensity change interface exists at the quantum confinement stark effect suppressing layer 107. The concrete steps are as follows: the In element intensity In the direction of the quantum confinement stark effect suppression layer 107 is In a decreasing trend In the active layer 103, and the In element intensity In the direction of the quantum confinement stark effect suppression layer 107 is In a decreasing trend In the lower waveguide layer 102. Wherein, the In element intensity decreasing angle of the active layer 103 In the direction of the quantum confinement stark effect suppressing layer 107 is alpha: alpha is more than or equal to 45 and less than or equal to 90 degrees; the lower waveguide layer 102 has an In element intensity decreasing angle β In the direction of the quantum confinement stark effect suppressing layer 107: beta is more than or equal to 45 degrees and less than or equal to 90 degrees.
Since the quantum confinement stark effect suppressing layer 107 has a steep In element intensity change interface, the corresponding In/Al element ratio also shows a decreasing trend In the quantum confinement stark effect suppressing layer 107. The concrete steps are as follows: the In/Al element ratio In the direction of the quantum confinement stark effect suppressing layer 107In the active layer 103 tends to decrease, and the In/Al element ratio decreases by an angle γ: gamma is more than or equal to 35 and less than or equal to 90 degrees; the lower waveguide layer 102 has a decreasing trend of In/Al element ratio In the direction of the quantum confinement stark effect suppressing layer 107, and the decreasing angle of In/Al element ratio is θ: θ is more than or equal to 35 and less than or equal to 90 degrees. Wherein the quantum confinement stark effect suppression layer 107 has an In/Al element intensity ratio of 10 to 100, the active layer 103 has an In/Al element intensity ratio of 1E4 to 5E5, and the ratio of the In/Al element intensity ratio of the active layer 103 to the quantum confinement stark effect suppression layer 107 has an In/Al element intensity ratio of k: k is more than or equal to 1E3 and less than or equal to 5E4.
Further, in this embodiment, as shown in fig. 2, the active layer 103 is formed by a well layer 103a and a barrier layer 103b to form a periodic structure, and the period is m: m is 1-3, and well layer 103a is In x Ga 1-x N, a thickness of 20 to 35 a; the barrier layer 103b is GaN and has a thickness of 35 to 60 a. The defect density of the quantum confinement Stark effect suppressing layer 107 and the active layer 103 is less than or equal to 1E6cm -2 。
Lower confinement layer 101, lower waveguide layer 102, upper waveguide layer 104, electron blocking layer 105, and upper confinement layer 106 comprise GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP.
The substrate 100 comprises sapphire, siliconGe, siC, alN, gaN, gaAs, inP sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
The semiconductor laser proposed in the present embodiment may be one of a semiconductor deep ultraviolet laser having an emission wavelength of 200nm to 300nm, a semiconductor ultraviolet laser having an emission wavelength of 300nm to 420nm, a semiconductor blue laser having an emission wavelength of 420nm to 480nm, a semiconductor green laser having an emission wavelength of 500nm to 550nm, a semiconductor red and yellow laser having an emission wavelength of 550nm to 700nm, a semiconductor infrared laser having an emission wavelength of 800nm to 1000nm, or a semiconductor far infrared laser having an emission wavelength of 1000nm to 1600 nm.
The following table shows the performance comparison between the semiconductor laser proposed in this embodiment and the conventional laser, and it can be seen that the slope efficiency of the semiconductor laser proposed in this embodiment is improved from 1.25W/a to 1.75W/a by about 40% compared with the conventional laser, the optical power is improved from 3.5W to 5.1W by about 46%, and the external quantum efficiency is improved from 27.5% to 39.5% by about 44%.
| Conventional semiconductor laser | Semiconductor laser of this embodiment | Amplitude of variation | |
| Slope efficiency (W/A) | 1.25 | 1.75 | 40％ |
| Optical power (W) | 3.5 | 5.1 | 46％ |
| External quantum efficiency | 27.50％ | 39.50％ | 44％ |
It will be apparent to those skilled in the art that various modifications and variations can be made to the present application without departing from the spirit or scope of the application. Thus, it is intended that the present application also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (10)
1. The semiconductor laser is characterized by comprising a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer which are sequentially arranged from bottom to top, wherein a quantum limiting Stark effect suppression layer is arranged between the active layer and the lower waveguide layer, the quantum limiting Stark effect suppression layer is provided with a Si doping concentration peak and an In element intensity valley, and the position of the Si doping concentration peak is the same as that of the In element intensity valley, or the position deviation is +/-5 nm.
2. The semiconductor laser according to claim 1, wherein the Si doping concentration of the quantum confinement stark effect suppression layer at the Si doping concentration peak position is 1E19cm -3 To 1E20 cm -3 The In element intensity at the In element intensity valley position is 1E17 (a.u.) to 1E18 (a.u.).
3. The semiconductor laser according to claim 1, wherein the In element intensity In the direction of the active layer vector quantum confinement stark effect suppression layer is In a decreasing trend, and the In element intensity decreasing angle is α: alpha is more than or equal to 45 and less than or equal to 90 degrees; the lower waveguide layer has a decreasing trend towards the In element strength of the quantum confinement Stark effect inhibition layer direction, and the decreasing angle of the In element strength is beta: beta is more than or equal to 45 degrees and less than or equal to 90 degrees.
4. The semiconductor laser according to claim 1, wherein the active layer has a decreasing In/Al element ratio In the direction of the quantum confinement stark effect suppression layer, and the decreasing angle of the In/Al element ratio is γ: gamma is more than or equal to 35 and less than or equal to 90 degrees; the lower waveguide layer has a decreasing trend towards the In/Al element proportion In the direction of the quantum confinement Stark effect inhibition layer, and the decreasing angle of the In/Al element proportion is theta: θ is more than or equal to 35 and less than or equal to 90 degrees.
5. The semiconductor laser according to claim 1, wherein the quantum confinement stark effect suppression layer has an In/Al element intensity ratio of 10 to 100, the active layer has an In/Al element intensity ratio of 1E4 to 5E5, and a ratio of the In/Al element intensity ratio of the active layer to the quantum confinement stark effect suppression layer has an In/Al element intensity ratio of k: k is more than or equal to 1E3 and less than or equal to 5E4.
6. The semiconductor laser of claim 1, wherein the quantum confinement stark effect suppression layer is one or a combination of GaN and InGaN and has a thickness of 20 to 500 a.
7. The semiconductor laser of claim 1, wherein the quantum confinement stark effect suppression layer and the active layer each have a defect density of less than or equal to 1E6cm -2 。
8. The semiconductor laser according to claim 1, wherein the active layer is formed of a well layer and a barrier layer with a periodic structure, the period being m: m is more than or equal to 1 and less than or equal to 3, and a trap layerIs In x Ga 1-x N, a thickness of 20 to 35 a; the barrier layer is GaN and has a thickness of 35 to 60 angstroms.
9. The semiconductor laser of claim 1, wherein the lower confinement layer, lower waveguide layer, upper waveguide layer, electron blocking layer, and upper confinement layer comprise GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP;
the substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
10. The semiconductor laser according to claim 1, wherein the semiconductor laser is one of a semiconductor deep ultraviolet laser having an emission wavelength of 200nm to 300nm, a semiconductor ultraviolet laser having an emission wavelength of 300nm to 420nm, a semiconductor blue laser having an emission wavelength of 420nm to 480nm, a semiconductor green laser having an emission wavelength of 500nm to 550nm, a semiconductor red and yellow laser having an emission wavelength of 550nm to 700nm, a semiconductor infrared laser having an emission wavelength of 800nm to 1000nm, or a semiconductor far infrared laser having an emission wavelength of 1000nm to 1600 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310782569.7A CN116826525A (en) | 2023-06-29 | 2023-06-29 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310782569.7A CN116826525A (en) | 2023-06-29 | 2023-06-29 | Semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116826525A true CN116826525A (en) | 2023-09-29 |
Family
ID=88127098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310782569.7A Pending CN116826525A (en) | 2023-06-29 | 2023-06-29 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116826525A (en) |
-
2023
- 2023-06-29 CN CN202310782569.7A patent/CN116826525A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN118054303A (en) | Semiconductor laser chip with light absorption loss suppression layer | |
| CN116131102A (en) | Semiconductor laser element with quantum confinement Stark control layer | |
| CN116565693A (en) | Semiconductor laser element with strain polarity topological layer | |
| CN116759889A (en) | Semiconductor laser element with ion conjugated layer | |
| CN116345307A (en) | Semiconductor laser element with van der Waals gas nonlinear layer | |
| CN116191200A (en) | Semiconductor laser element with phonon scattering regulation and control layer | |
| CN116826525A (en) | Semiconductor laser | |
| CN116169558B (en) | Semiconductor laser with substrate mode suppression layer | |
| CN220272957U (en) | Semiconductor laser element with polarization regulating layer | |
| CN220272958U (en) | Semiconductor laser with InN phase separation inhibition layer | |
| CN219959682U (en) | Semiconductor laser element with optical polarization insertion layer | |
| CN116526297A (en) | Semiconductor laser with double exciton quantum confinement layer | |
| CN116154615A (en) | Semiconductor laser element with quantum spin electron layer | |
| CN116799620A (en) | Semiconductor laser with exciton resonance and Hall transport layer | |
| CN117498154A (en) | Gallium nitride-based semiconductor laser | |
| CN116598890A (en) | Semiconductor laser element with polarization regulating layer | |
| CN116598893A (en) | Semiconductor laser with InN phase separation inhibition layer | |
| CN116914564A (en) | Semiconductor laser | |
| CN117526088A (en) | Semiconductor laser element with spin polarized electron layer | |
| CN117691467A (en) | Gallium nitride-based semiconductor ultraviolet laser chip | |
| CN117175351A (en) | Semiconductor laser element with nonreciprocal topological laser oscillation layer | |
| CN116598891A (en) | Blue light laser | |
| CN116937329A (en) | Semiconductor laser element | |
| CN116470386A (en) | Semiconductor laser element with electron spin state layer | |
| CN117691466A (en) | Semiconductor ultraviolet laser diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |