CN220272958U - Semiconductor laser with InN phase separation inhibition layer - Google Patents
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Abstract
The utility model discloses a semiconductor laser with an InN phase separation inhibition layer, which sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer from bottom to top, wherein the InN phase separation inhibition layer is arranged between the active layer and the lower waveguide layer. The upper waveguide layer, the active layer, the InN phase separation inhibition layer and the lower waveguide layer are designed to form In/Al element strength proportion gradients, si/Mg concentration proportion gradients and Si concentration reduction angles are designed to form the upper waveguide layer, the active layer, the InN phase separation inhibition layer and the lower waveguide layer, in segregation of the active layer is further inhibited, non-radiative recombination is reduced, and slope efficiency, external quantum efficiency and beam quality factors are improved.
Description
Technical Field
The utility model relates to the technical field of semiconductor photoelectrons, in particular to a semiconductor laser with an InN phase separation inhibition layer.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The laser has various types and various classification modes, and mainly comprises solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like. The laser is greatly different from the nitride semiconductor light-emitting diode, 1) the laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level; 2) The current density of the laser reaches KA/cm2, which is more than 2 orders of magnitude higher than that of the nitride light-emitting diode, so that stronger electron leakage, more serious Auger recombination, stronger polarization effect and more serious electron-hole mismatch are caused, and more serious efficiency attenuation drop effect is caused; 3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated; 4) The principle is different: the light emitting diode generates radiation composite luminescence by electron hole transition to a quantum well or a p-n junction under the action of external voltage, and the laser can perform lasing under the condition that the lasing condition is satisfied, the inversion distribution of carriers in an active area is required to be satisfied, stimulated radiation light oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss by satisfying a threshold condition, and finally laser is output. The nitride semiconductor laser has the following problems: the increase of the In component of the quantum well can generate fluctuation and strain of the In component, the gain spectrum of the laser is widened, and the peak gain is reduced; the In component of the quantum well is increased, the thermal stability is deteriorated, the high-temperature p-type semiconductor and the growth of the limiting layer can cause thermal degradation of the active layer, and the quality of the active layer and the interface quality are reduced; the internal defect density of the active layer is high, the intersolubility gap between InN and GaN is large, inN phase separation segregation, thermal degradation and non-ideal crystal quality are caused, so that the quality of a quantum well and the quality of an interface are non-ideal, and a non-radiative recombination center or optical catastrophe is increased.
Disclosure of Invention
The utility model provides a semiconductor laser with an InN phase separation inhibition layer, which aims to solve the problems that In component fluctuation and strain are generated due to the increase of In component of a quantum well In the existing nitride semiconductor laser, the gain spectrum of the laser is widened, and the peak gain is reduced; the In component of the quantum well is increased, the thermal stability is deteriorated, the high-temperature p-type semiconductor and the growth of the limiting layer can cause thermal degradation of the active layer, and the quality of the active layer and the interface quality are reduced; the technical problems of non-radiative recombination center increase or optical catastrophe are caused by the non-ideal quantum well quality and interface quality due to the high defect density in the active layer, larger intersolubility gap between InN and GaN, separation segregation of InN phase, thermal degradation and non-ideal crystal quality.
In order to solve the technical problems, the embodiment of the utility model provides a semiconductor laser, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer of an electron blocking layer, wherein the substrate, the lower limiting layer, the lower waveguide layer, the active layer, the upper waveguide layer and the upper limiting layer of the electron blocking layer are sequentially stacked from bottom to top, and an InN phase separation inhibiting layer is arranged between the active layer and the lower waveguide layer.
Further, the active layer consists of a well layer and a barrier layer, wherein the period is m is more than or equal to 1 and less than or equal to 3, and the well layer is I n x Ga 1-x N (103 a), barrier layer is GaN (103 b), well layer (103 a) thickness is 10-100 a m, and barrier layer (103 b) thickness is 10-150 a m.
Further, the InN phase separation inhibition layer is composed of I n y Ga 1-y N (107 a) and GaN (107 b) of InN phase separation inhibition layer I N y Ga 1-y N thickness (107 a) is less than or equal to I N of the active layer x Ga 1-x The N well layer (103 a) has a thickness I N component y < x, and the GaN (107 b) of the InN phase separation inhibiting layer has a thickness greater than the barrier layer GaN (103 b) of the active layer.
Further, I n of the InN phase separation inhibiting layer y Ga 1-y The thickness of N (107 a) is 10-50 a, and the thickness of GaN (107 b) is 20-200 a.
Further, the InN phase separation inhibiting layer has a defect density of 1E6 cm or less -2 The I n segregation of the defect-induced active layer is suppressed.
Further, the intensity ratio of I n/Al element of the InN phase separation inhibiting layer is smaller than the intensity ratio of I n/Al element of the active layer.
Further, the intensity ratio of I n/Al element of the InN phase separation inhibiting layer is 1E 4-6E 4, the intensity ratio of I n/Al element of the active layer 103 is 6E 4-5E 5, and the ratio of I n/Al element of the active layer 103 to I n/Al element of the InN phase separation inhibiting layer is k.1 < k < 50.
Further, the intensity ratio of I n/Al elements of the upper waveguide layer is 1-6E 4, and the intensity ratio gradually decreases from the active layer to the upper waveguide layer and is distributed in an arc shape; the intensity ratio of I n/Al elements of the lower waveguide layer is 2E 2-6E 4, and the lower waveguide layer gradually descends from the active layer to the lower waveguide direction and is distributed in an arc shape.
Further, the upper waveguide layer, the active layer, the InN phase separation suppression layer and the lower waveguide layer form a I n/Al element strength ratio gradient, so that I n segregation of the active layer is further suppressed.
Further, the concentration ratio of Si/Mg in the InN phase separation suppressing layer 107 is 150 to 500, the concentration ratio of Si/Mg in the active layer is 1 to 150, and the concentration ratio of Si/Mg in the InN phase separation suppressing layer 107 is larger than that in the active layer.
Further, the Si/Mg concentration ratio of the lower waveguide layer is 0.5-200, and gradually decreases from the InN phase separation suppression layer to the lower waveguide layer; the Si/Mg concentration ratio of the upper waveguide layer is 0.0001 to 10, and gradually decreases from the active layer 103 toward the upper waveguide layer.
Further, the concentration of Si in the inn phase separation suppression layer is highest, the concentration of S I in the direction of the downward waveguide layer 102 tends to decrease, and the decreasing angle of S I concentration is α: alpha is more than or equal to 30 and less than or equal to 70; the Si concentration of the InN phase separation inhibiting layer in the direction of the active layer tends to decrease, and the Si concentration decreasing angle is beta: beta is more than or equal to 45 and less than or equal to 90; s i concentration decrease angle β is greater than α.
Further, the upper waveguide layer, the active layer, the InN phase separation suppression layer and the lower waveguide layer form a S I/Mg concentration ratio gradient and S I concentration falling angle, and I n segregation of the active layer is further suppressed.
Further, the lower confinement layer and the lower waveguide layer, the upper waveguide layer, the electron blocking layer, the upper confinement layer include GaN, al GaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGa InP, inGaAs, alInAs, alInP, alGaP, inGaP; the semiconductor laser element comprises a semiconductor deep ultraviolet laser with the light emitting wavelength of 200-300 nm, a semiconductor ultraviolet laser with the light emitting wavelength of 300-420 nm, a semiconductor blue laser with the light emitting wavelength of 420-480 nm, a semiconductor green laser with the light emitting wavelength of 500-550 nm, a semiconductor red light and yellow light laser with the light emitting wavelength of 550-700 nm, a semiconductor infrared laser with the light emitting wavelength of 800-1000 nm and a semiconductor far infrared laser with the light emitting wavelength of 1000-1600 nm.
In this embodiment, the substrate comprises sapphire, silicon, ge, si C, al N, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/Al N composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
Compared with the prior art: i n by designing an InN phase separation inhibiting layer y Ga 1-y N thickness (107 a) is less than or equal to I N of the active layer x Ga 1-x The thickness of the N well layer (103 a), the thickness of I N component y < x, the thickness of GaN (107 b) of the InN phase separation inhibiting layer is larger than that of the barrier layer GaN (103 b) of the active layer, the cycle number of the active layer is designed to be less than or equal to 3, and the intensity ratio of InN phase separation inhibiting layer I N/Al element (from SI M)S secondary ion mass spectrometer test) is smaller than I n/Al element intensity ratio of the active layer to inhibit I n segregation of the active layer, and simultaneously, the defect density of the InN phase separation inhibiting layer is controlled to be less than or equal to 1E6 cm -2 The upper waveguide layer, the active layer, the InN phase separation inhibition layer and the lower waveguide layer are designed to form a I n/Al element strength proportion gradient, the upper waveguide layer, the active layer, the InN phase separation inhibition layer and the lower waveguide layer are designed to form a Si/Mg concentration proportion gradient and a Si concentration reduction angle, I n segregation of the active layer is further inhibited, non-radiative recombination is reduced, and slope efficiency, external quantum efficiency and a beam quality factor are improved.
Drawings
Fig. 1 is a schematic structural view of a semiconductor laser having an InN phase separation suppression layer according to an embodiment of the present utility model;
FIG. 2 is a TEM transmission electron microscope image of a slope efficiency enhancement structure of a semiconductor laser having an InN phase separation suppression layer according to an embodiment of the present utility model;
FIG. 3 is a SIMS secondary ion mass spectrum of a semiconductor laser having an InN phase separation suppression layer according to an embodiment of the present utility model;
FIG. 4 is a SIMS secondary ion mass spectrum (identifying the Si concentration decrease angle) of a semiconductor laser having an InN phase separation suppression layer according to an embodiment of the present utility model;
wherein, the reference numerals of the specification drawings are as follows:
100: a substrate; 101: a lower confinement layer; 102: lower waveguide layer by layer; 103: an active layer; 104: upper waveguide layer, 105: electron blocking layer, 106: upper confinement layer, 107: inN phase separation inhibition layer.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
Referring to fig. 1 and fig. 2, a schematic structural diagram of an embodiment of a semiconductor laser according to the present utility model includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 106 of an electron blocking layer 105 stacked in order from bottom to top, wherein an InN phase separation suppression layer 107 is disposed between the active layer 103 and the lower waveguide layer 102.
In the present embodiment, the active layer 103 comprises a periodic structure of a well layer and a barrier layer, the period is m.ltoreq.m.ltoreq.3, and the well layer is I n x Ga 1-x N (103 a), barrier layer is GaN (103 b), well layer (103 a) thickness is 10-100 a m, and barrier layer (103 b) thickness is 10-150 a m.
In the present embodiment, the InN phase separation suppression layer 107 is formed of I n y Ga 1-y N (107 a) and GaN (107 b) of InN phase separation inhibition layer I N y Ga 1-y N thickness (107 a) is less than or equal to I N of the active layer x Ga 1-x The N well layer (103 a) has a thickness I N component y < x, and the GaN (107 b) of the InN phase separation inhibiting layer has a thickness greater than the barrier layer GaN (103 b) of the active layer.
In the present embodiment, I n of the InN phase separation suppression layer 107 y Ga 1-y The thickness of N (107 a) is 10-50 a, and the thickness of GaN (107 b) is 20-200 a.
In the present embodiment, the InN phase separation suppression layer 107 has a defect density of 1E6 cm or less -2 The I n segregation of the defect-induced active layer is suppressed.
The conventional nitride semiconductor laser has the following problems: the increase of the In component of the quantum well can generate fluctuation and strain of the In component, the gain spectrum of the laser is widened, and the peak gain is reduced; the In component of the quantum well is increased, the thermal stability is deteriorated, the high-temperature p-type semiconductor and the growth of the limiting layer can cause thermal degradation of the active layer, and the quality of the active layer and the interface quality are reduced; the internal defect density of the active layer is high, the intersolubility gap between InN and GaN is large, inN phase separation segregation, thermal degradation and non-ideal crystal quality are caused, so that the quality of a quantum well and the quality of an interface are non-ideal, and a non-radiative recombination center or optical catastrophe is increased. By designing an InN phase separation inhibition layerIn of (a) y Ga 1-y N thickness (107 a) is less than or equal to I N of the active layer x Ga 1-x The N well layer (103 a) thickness, I N component y < x, gaN (107 b) thickness of InN phase separation inhibiting layer is larger than barrier layer GaN (103 b) thickness of active layer, the number of periods of the active layer is less than or equal to 3, inN phase separation inhibiting layer I N/Al element strength ratio (tested by SIMS secondary ion mass spectrometer) is less than I N/Al element strength ratio of active layer to inhibit In segregation of active layer, and meanwhile, defect density of InN phase separation inhibiting layer is controlled to be less than or equal to 1E6 cm -2 The upper waveguide layer, the active layer, the InN phase separation inhibition layer and the lower waveguide layer are designed to form I n/Al element strength proportion gradients, S I/Mg concentration proportion gradients and Si concentration decreasing angles are designed to form the upper waveguide layer, the active layer, the InN phase separation inhibition layer and the lower waveguide layer, I n segregation of the active layer is further inhibited, non-radiative recombination is reduced, and slope efficiency, external quantum efficiency and beam quality factors are improved.
Referring to figures 3 and 4 of the drawings,
in this embodiment, the I nN phase separation suppression layer 107 has a I n/Al element intensity ratio (as measured by an S IMS secondary ion mass spectrometer) that is less than the I n/Al element intensity ratio of the active layer.
In this embodiment, the ratio of I n/Al element intensity of the InN phase separation suppression layer 107 (measured by an S IMS secondary ion mass spectrometer) is 1E 4-6E 4, the ratio of I n/Al element intensity of the active layer 103 is 6E 4-5E 5, and the ratio of In/Al element intensity of the active layer 103 to that of InN phase separation suppression layer I n/Al element intensity is k 1 < k < 50.
In this embodiment, the intensity ratio of I n/Al element of the upper waveguide layer 104 (tested by the SI MS secondary ion mass spectrometer) is 1-6E 4, and gradually decreases from the active layer to the upper waveguide layer, and is distributed in an arc shape; the In/Al element intensity ratio of the lower waveguide layer is 2E 2-6E 4, and the lower waveguide layer gradually descends from the active layer to the lower waveguide direction and is distributed In an arc shape.
In this embodiment, the upper waveguide layer 104, the active layer 103, the inn phase separation suppression layer 107, and the lower waveguide layer 102 constitute a I n/Al element strength ratio gradient, which collectively suppresses I n segregation of the active layer.
In this embodiment, the InN phase separation suppression layer 107 has a S I/Mg concentration ratio (as measured by SIMS secondary ion mass spectrometry) of 150 to 500, the active layer 103 has a S I/Mg concentration ratio of 1 to 150, and the InN phase separation suppression layer 107 has a S I/Mg concentration ratio greater than the active layer's Si/Mg concentration ratio.
In this embodiment, the ratio of S I/Mg concentration of the lower waveguide layer 102 (measured by S IMS secondary ion mass spectrometry) is 0.5 to 200, and gradually decreases from the inn phase separation suppression layer 107 toward the lower waveguide layer 102; the Si/Mg concentration ratio of the upper waveguide layer is 0.0001 to 10, and gradually decreases from the active layer 103 toward the upper waveguide layer.
In this embodiment, the concentration of S I in the I nN phase separation suppression layer 107 is highest, the concentration of Si in the direction of the downward waveguide layer 102 tends to decrease, and the Si concentration decreasing angle is α: alpha is more than or equal to 30 and less than or equal to 70; the concentration of S I in the direction of the active layer 103 in the inn phase separation suppression layer 107 tends to decrease, and the decreasing angle of S I concentration is β: beta is more than or equal to 45 and less than or equal to 90; s i concentration decrease angle β is greater than α.
In this embodiment, the upper waveguide layer 104, the active layer 103, the inn phase separation suppression layer 107, and the lower waveguide layer 102 constitute a S I/Mg concentration ratio gradient and an Si concentration decrease angle, further suppressing In segregation of the active layer.
In the present embodiment, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 include GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, si C, ga 2 O 3 Any one or any combination of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGa InP, inGaAs, alInAs, alInP, alGaP, inGaP; the semiconductor laser element comprises a semiconductor deep ultraviolet laser with the light emitting wavelength of 200-300 nm, a semiconductor ultraviolet laser with the light emitting wavelength of 300-420 nm, a semiconductor blue laser with the light emitting wavelength of 420-480 nm, a semiconductor green laser with the light emitting wavelength of 500-550 nm, a semiconductor red light and yellow light laser with the light emitting wavelength of 550-700 nm, a semiconductor infrared laser with the light emitting wavelength of 800-1000 nm and a semiconductor far infrared laser with the light emitting wavelength of 1000-1600 nm.
In the present embodiment, the substrate 100 comprises sapphire, silicon, ge, siC, al N, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/Al N composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
By adopting the embodiment of the utility model, the gains of the semiconductor laser are shown in the following table:
| blue laser-item | Traditional laser | The laser of the utility model | Amplitude of variation |
| Beam quality factor M 2 | 3.7 | 2.1 | 76％ |
| Slope efficiency (W/A) | 1.25 | 1.85 | 48％ |
| Optical power (W) | 3.5 | 5.1 | 46％ |
| External quantum efficiency | 28.50％ | 40.10％ | 41％ |
The beam quality factor of the semiconductor laser is improved from 3.7 to 2.1, the slope efficiency is improved from 1.25 to 1.85W/A, the optical power is improved from 3.5W to 5.1W to 46%, the external quantum efficiency is improved from 28.5% to 40.1%, and the external quantum efficiency is improved by about 41%, so that the existing nitride semiconductor laser has the following problems: the increase of the In component of the quantum well can generate fluctuation and strain of the In component, the gain spectrum of the laser is widened, and the peak gain is reduced; the In component of the quantum well is increased, the thermal stability is deteriorated, the high-temperature p-type semiconductor and the growth of the limiting layer can cause thermal degradation of the active layer, and the quality of the active layer and the interface quality are reduced; the internal defect density of the active layer is high, the intersolubility gap between InN and GaN is large, inN phase separation segregation, thermal degradation and non-ideal crystal quality are caused, so that the quality of a quantum well and the quality of an interface are non-ideal, and a non-radiative recombination center or optical catastrophe is increased. I n by designing an InN phase separation inhibiting layer y Ga 1-y N thickness (107 a) is less than or equal to I N of the active layer x Ga 1-x The N-well layer (103 a) thickness, I N component y < x, gaN (107 b) thickness of the InN phase separation inhibiting layer is larger than the barrier layer GaN (103 b) thickness of the active layer, the period number of the active layer is less than or equal to 3, the InN phase separation inhibiting layer I N/Al element strength ratio (tested by SIMS secondary ion mass spectrometer) is less than I N/Al element strength ratio of the active layer to inhibit I N segregation of the active layer, and meanwhile, the defect density of the InN phase separation inhibiting layer is controlled to be less than or equal to 1E6 cm -2 The upper waveguide layer, the active layer, the InN phase separation inhibition layer and the lower waveguide layer are designed to form In/Al element strength proportion gradients, the upper waveguide layer, the active layer, the InN phase separation inhibition layer and the lower waveguide layer are designed to form S I/Mg concentration proportion gradients and S I concentration decreasing angles, I n segregation of the active layer is further inhibited, non-radiative recombination is reduced, and slope efficiency, external quantum efficiency and beam quality factors are improved.
The foregoing embodiments have been provided for the purpose of illustrating the general principles of the present utility model, and are not to be construed as limiting the scope of the utility model. It should be noted that any modifications, equivalent substitutions, improvements, etc. made by those skilled in the art without departing from the spirit and principles of the present utility model are intended to be included in the scope of the present utility model.
Claims (8)
1. The semiconductor laser with InN phase separation inhibiting layer includes substrate, lower limiting layer, lower waveguide layer, active layer, upper waveguide layer, electron blocking layer and upper limiting layer successively from bottom to top, and features that: the active layer and the lower waveguide layer are provided with InN phase separation inhibition layers, and the InN phase separation inhibition layers are formed by In y Ga 1-y N (107 a) and GaN (107 b) In the InN phase separation suppression layer y Ga 1-y An N thickness (107 a) is less than or equal to In of the active layer x Ga 1-x The thickness of the N well layer (103 a), the In component y < x, the GaN (107 b) thickness of the InN phase separation inhibiting layer is larger than the barrier layer GaN (103 b) thickness of the active layer, the InN phase separation inhibiting layer has an In y Ga 1-y The N (107 a) has a thickness of 10 to 50 a, the GaN (107 b) has a thickness of 20 to 200 a, and the InN phase separation suppressing layer has a defect density of 1E6 cm or less -2 。
2. A semiconductor laser having an InN phase separation suppression layer according to claim 1, wherein the InN phase separation suppression layer has an In/Al element intensity ratio (as tested by SIMS secondary ion mass spectrometry) that is less than that of the active layer.
3. A semiconductor laser having an InN phase separation suppression layer according to claim 1, wherein the InN phase separation suppression layer has an In/Al element intensity ratio (as measured by SIMS secondary ion mass spectrometry) of 1E4 to 6E4, the active layer has an In/Al element intensity ratio of 6E4 to 5E5, and the ratio of the In/Al element intensity ratio of the active layer to the In/Al element intensity ratio of the InN phase separation suppression layer is k 1 < k < 50.
4. The semiconductor laser with InN phase separation suppression layer according to claim 1, wherein the In/Al element intensity ratio (as tested by SIMS secondary ion mass spectrometry) of the upper waveguide layer is 1-6E 4, gradually decreasing from the active layer toward the upper waveguide layer, and being distributed In an arc shape; the In/Al element intensity ratio of the lower waveguide layer is 2E 2-6E 4, and the lower waveguide layer gradually descends from the active layer to the lower waveguide direction and is distributed In an arc shape.
5. A semiconductor laser having an InN phase separation suppression layer as claimed In claim 1 wherein said upper, active, inN phase separation suppression layers and lower waveguide layers comprise an In/Al elemental intensity ratio gradient.
6. The semiconductor laser having an InN phase separation suppression layer according to claim 1, wherein the InN phase separation suppression layer has a Si/Mg concentration ratio of 150 to 500, the active layer has a Si/Mg concentration ratio of 1 to 150, and the InN phase separation suppression layer has a Si/Mg concentration ratio greater than that of the active layer; the Si/Mg concentration ratio of the lower waveguide layer is 0.5-200, and the lower waveguide layer gradually descends from the InN phase separation inhibition layer to the lower waveguide layer; the Si/Mg concentration ratio of the upper waveguide layer is 0.0001-10, and gradually decreases from the active layer to the upper waveguide layer; the InN phase separation inhibition layer has the highest Si concentration, the Si concentration in the direction of the downward waveguide layer is in a descending trend, and the Si concentration descending angle is alpha: alpha is more than or equal to 30 and less than or equal to 70; the Si concentration of the InN phase separation inhibiting layer in the direction of the active layer tends to decrease, and the Si concentration decreasing angle is beta: beta is more than or equal to 45 and less than or equal to 90; the Si concentration decrease angle beta is larger than alpha; the upper waveguide layer, the active layer, the InN phase separation suppression layer and the lower waveguide layer form a Si/Mg concentration proportion gradient and a Si concentration decreasing angle, so that In segregation of the active layer is further suppressed.
7. The semiconductor laser having an InN phase separation suppression layer according to claim 1, wherein said active layer is composed of a well layer and a barrier layerThe periodic structure is composed, the period is m is more than or equal to 1 and less than or equal to 3, and the well layer is In x Ga 1-x N (103 a), the barrier layer is GaN (103 b), the thickness of the well layer (103 a) is 10-100 m, and the thickness of the barrier layer (103 b) is 10-150 m; the lower confinement layer and the lower waveguide layer, the upper waveguide layer, the electron blocking layer and the upper confinement layer comprise GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP; the semiconductor laser element comprises a semiconductor deep ultraviolet laser with the light emitting wavelength of 200-300 nm, a semiconductor ultraviolet laser with the light emitting wavelength of 300-420 nm, a semiconductor blue laser with the light emitting wavelength of 420-480 nm, a semiconductor green laser with the light emitting wavelength of 500-550 nm, a semiconductor red light and yellow light laser with the light emitting wavelength of 550-700 nm, a semiconductor infrared laser with the light emitting wavelength of 800-1000 nm and a semiconductor far infrared laser with the light emitting wavelength of 1000-1600 nm.
8. The semiconductor laser with InN phase separation suppression layer of claim 1, wherein the substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
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