CN116799620A - Semiconductor laser with exciton resonance and Hall transport layer - Google Patents
Semiconductor laser with exciton resonance and Hall transport layer Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 56
- 239000012535 impurity Substances 0.000 claims abstract description 110
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- 229910052799 carbon Inorganic materials 0.000 claims abstract description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 16
- 239000001257 hydrogen Substances 0.000 claims abstract description 16
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 16
- 239000001301 oxygen Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims description 19
- 230000000903 blocking effect Effects 0.000 claims description 9
- 229910052594 sapphire Inorganic materials 0.000 claims description 8
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- 239000002131 composite material Substances 0.000 claims description 7
- 229910010093 LiAlO Inorganic materials 0.000 claims description 2
- 229910020068 MgAl Inorganic materials 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910052596 spinel Inorganic materials 0.000 claims description 2
- 239000011029 spinel Substances 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 abstract description 8
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- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/204—Strongly index guided structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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Abstract
The invention relates to the technical field of semiconductor devices, in particular to a semiconductor laser with exciton resonance and Hall transport layers. The first lower limiting layer, the second lower limiting layer, the third lower limiting layer, the fourth lower limiting layer and the fifth lower limiting layer of the lower limiting layer have Al strength, in strength, si doping concentration, thickness, carbon impurity concentration, hydrogen impurity concentration and oxygen impurity concentration gradient structural design, an exciton resonance and Hall transport structure is formed, the number of pseudo spin windings of the exciton is more than 1, the energy valley exciton is caused to split, exciton resonance is generated, hall transport and valley selective transport of the exciton are enhanced, multiplication and radiation recombination efficiency of carriers is improved, transmission loss and absorption of an optical waveguide are reduced, mode gain of a laser is improved, refractive index of the limiting layer is increased under the condition that crystal quality is not reduced, light field mode leakage is reduced, quality of a far-field light field FFP is improved, threshold value of the laser is reduced, and laser power and slope efficiency are improved.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectric devices, in particular to a semiconductor laser with exciton resonance and Hall transport layers.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The laser has various types and various classification modes, and mainly comprises solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like.
The laser is greatly different from the nitride semiconductor light-emitting diode, 1) the laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level; 2) Use of lasers current densities up to KA/cm 2 More than 2 orders of magnitude higher than nitride light emitting diodes, thereby causing stronger electron leakage, more severe auger recombination, stronger polarization effect, more severe electron-hole mismatch, resulting in more severe efficiency decay Droop effect; 3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated; 4) The principle is different: the light emitting diode generates radiation composite luminescence by electron hole transition to quantum well or p-n junction under the action of external voltage, and the laser can be excited only when the excitation condition is satisfied, and the inversion distribution of carriers in the active region must be satisfied, and the excited radiation is in resonanceThe cavity oscillates back and forth, propagation in the gain medium amplifies the light, satisfies a threshold condition to make the gain greater than the loss, and finally outputs the laser.
The nitride semiconductor laser has the following problems: 2) The absorption loss of the optical waveguide is high, inherent carbon impurities compensate acceptors in a p-type semiconductor, damage p-type and the like, the ionization rate of p-type doping is low, a large amount of unionized Mg acceptors impurities can cause the increase of internal optical loss, the refractive index dispersion of the laser is reduced along with the increase of wavelength, and the mode gain of the laser is reduced; 3) The thickness of the lower limiting layer is increased, so that the refractive index of the limiting layer can be reduced, but the thickness of the lower limiting layer is increased, so that the component regulation range is limited, and the problems of cracking, bending, quality reduction and the like are easily caused; meanwhile, leakage of the optical field mode to the substrate to form standing waves can lead to low substrate mode suppression efficiency and poor FFP quality of far-field images. 4) The p-type semiconductor has the advantages that the Mg acceptor activation energy is large, the ionization efficiency is low, the hole concentration is far lower than the electron concentration, the hole mobility is far lower than the electron mobility, the quantum well polarization electric field promotes the problems that a hole injection barrier, the hole overflows an active layer and the like, the hole injection is uneven and the efficiency is low, the serious asymmetry mismatch of electron holes in the quantum well, the electron leakage and the carrier de-localization are caused, the hole transportation in the quantum well is more difficult, the carrier injection is uneven, the gain is uneven, meanwhile, the gain spectrum of the laser is widened, the peak gain is reduced, the threshold current of the laser is increased, and the slope efficiency is reduced. 5) The valence band step difference of the laser is increased, the hole is more difficult to transport in the quantum well, the carrier injection is uneven, and the gain is uneven;
disclosure of Invention
The invention aims to provide a semiconductor laser with an exciton resonance and Hall transport layer, wherein the exciton resonance and Hall transport layer arranged in the semiconductor laser can improve the ionization efficiency and mobility of Mg, reduce the valence band connection of the laser, improve the injection and transport efficiency of holes, reduce the threshold value of the laser, improve the laser power and slope efficiency, and improve the gain uniformity and peak gain; meanwhile, refractive index dispersion of the laser is reduced, light field mode leakage is restrained, quality of far-field light field FFP is improved, and beam quality factor is improved.
In order to achieve the above purpose, the present invention adopts the following technical scheme: the semiconductor laser with the exciton resonance and Hall transport layers sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer from bottom to top, wherein the lower limiting layer sequentially comprises a first lower limiting layer, a second lower limiting layer, a third lower limiting layer, a fourth lower limiting layer and a fifth lower limiting layer from bottom to top, the thicknesses of the first lower limiting layer, the second lower limiting layer, the third lower limiting layer, the fourth lower limiting layer and the fifth lower limiting layer, the Al intensity, the In intensity, the Si doping concentration, the carbon impurity concentration, the hydrogen impurity concentration and the oxygen impurity concentration are all different and are designed In a gradient manner according to a certain sequence, the exciton resonance and Hall transport structure is jointly formed, the Al intensity is the relative value of any unit of an Al component tested by a SIMS secondary ion mass spectrometer, and the In intensity is the relative value of any unit of the In component tested by the SIMS secondary ion mass spectrometer.
Further improvements as a semiconductor laser with exciton resonance and hall transport layers:
preferably, the exciton resonance of the lower limiting layer is designed In a gradient manner with the Al intensity and the In intensity of each layer In the Hall transport structure, and the Al intensity of each layer meets the requirements of the fourth lower limiting layer, the second lower limiting layer, the first lower limiting layer, the fifth lower limiting layer and the third lower limiting layer; the In strength of each layer satisfies the third lower confinement layer > the second lower confinement layer > the first lower confinement layer > the fifth lower confinement layer > the fourth lower confinement layer.
Preferably, the exciton resonance of the lower limiting layer and the thickness of each layer in the Hall transport structure are designed in a gradient manner, the thickness of the first lower limiting layer is T1, the thickness of the second lower limiting layer is T2, the thickness of the third lower limiting layer is T3, the thickness of the fourth lower limiting layer is T4, and the thickness of the fifth lower limiting layer is T5, wherein T1 is more than or equal to 10nm and less than T3 is more than or equal to 5, T4 is more than or equal to 4 and less than or equal to 5000nm.
Preferably, the exciton resonance of the lower limiting layer and the Si doping concentration of each layer in the Hall transport structure are designed in a gradient way, the Si doping concentration of the first lower limiting layer is S1,the second lower limiting layer has a Si doping concentration of S2, the third lower limiting layer has a Si doping concentration of S3, the fourth lower limiting layer has a Si doping concentration of S4, and the fifth lower limiting layer has a Si doping concentration of S5, wherein 1E20cm -3 ≥S1>S3>S2>S5>S4≥1E17cm -3 。
Preferably, the exciton resonance of the lower confinement layer and the carbon impurity concentration of each layer in the Hall transport structure are designed in a gradient manner, the carbon impurity concentration of the first lower confinement layer is C1, the carbon impurity concentration of the second lower confinement layer is C2, the carbon impurity concentration of the third lower confinement layer is C3, the carbon impurity concentration of the fourth lower confinement layer is C4, and the carbon impurity concentration of the fifth lower confinement layer is C5, wherein 1E18cm -3 ≥C4>C2>C3>C1>C5≥1E15cm -3 。
Preferably, the exciton resonance of the lower confinement layer and the oxygen impurity concentration of each layer in the Hall transport structure are designed in a gradient manner, the oxygen impurity concentration of the first lower confinement layer is O1, the oxygen impurity concentration of the second lower confinement layer is O2, the oxygen impurity concentration of the third lower confinement layer is O3, the oxygen impurity concentration of the fourth lower confinement layer is O4, and the oxygen impurity concentration of the fifth lower confinement layer is O5, wherein 5E17cm -3 ≥O4>O5>O2>O1>O3≥1E15cm -3 。
Preferably, the exciton resonance of the lower confinement layer and the hydrogen impurity concentration of each layer in the Hall transport structure are designed in a gradient manner, the hydrogen impurity concentration of the first lower confinement layer is H1, the hydrogen impurity concentration of the second lower confinement layer is H2, the hydrogen impurity concentration of the third lower confinement layer is H3, the hydrogen impurity concentration of the fourth lower confinement layer is H4, and the hydrogen impurity concentration of the fifth lower confinement layer is H5, wherein 1E19cm -3 ≥H4>H5>H3>H2>H1≥1E16cm -3 。
Preferably, the lower confinement layer, the lower waveguide layer, the active layer, the upper waveguide layer, the electron blocking layer, and the upper confinement layer are GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or a combination of two or more of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP.
Preferably, the semiconductor laser is a semiconductor deep ultraviolet laser with an emission wavelength of 200nm-300nm, or a semiconductor ultraviolet laser with an emission wavelength of 300nm-420nm, or a semiconductor blue laser with an emission wavelength of 420nm-480nm, or a semiconductor green laser with an emission wavelength of 500nm-550nm, or semiconductor red and yellow lasers with an emission wavelength of 550nm-700nm, or a semiconductor infrared laser with an emission wavelength of 800nm-1000nm, or a semiconductor far infrared laser with an emission wavelength of 1000nm-1600 nm.
Preferably, the substrate is sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a semiconductor laser with exciton resonance and Hall transport layers. The invention selects the components of the active layer to form a quantum well structure of the corresponding components, thereby realizing the light emission of the laser in different wavelength ranges. The lower limiting layer comprises a first lower limiting layer, a second lower limiting layer, a third lower limiting layer, a fourth lower limiting layer and a fifth lower limiting layer, and has gradient structural designs such as Al strength gradient, in strength gradient, si doping concentration gradient, thickness gradient, carbon impurity concentration gradient, hydrogen impurity concentration gradient, oxygen impurity concentration gradient and the like, so that an exciton resonance and Hall transport structure is formed; the number of the pseudo spin windings of the excitons is more than 1, which causes the splitting of the energy valley excitons, generates exciton resonance, enhances the Hall transport and valley selective transport of the excitons, improves the multiplication and radiation recombination efficiency of carriers, reduces the transmission loss and absorption of the optical waveguide, improves the mode gain of the laser, increases the refractive index of the limiting layer under the condition of not reducing the crystal quality, reduces the light field mode leakage, improves the quality of the far field light field FFP, improves the quality factor of the light beam, reduces the threshold value of the laser, and improves the laser power and slope efficiency.
Drawings
Fig. 1 is a schematic structural view of a semiconductor laser of comparative example 1;
fig. 2 is a schematic structural view of the semiconductor laser having exciton resonance and hall transport layers of examples 1-4;
fig. 3 is a structural SIMS secondary ion mass spectrum of a semiconductor laser having exciton resonance and hall transport layers of example 1 of the present invention;
the meaning of the symbols in the drawings is as follows:
1. a substrate; 2. a lower confinement layer; 21. a first lower confinement layer; 22. a second lower confinement layer; 23. a third lower confinement layer; 24. a fourth lower confinement layer; 25. a fifth lower confinement layer; 3. a lower waveguide layer; 4. an active layer; 5. an upper waveguide layer; 6. an electron blocking layer; 7. and (5) an upper limiting layer.
Detailed Description
The present invention will be further described in detail with reference to the following examples, in order to make the objects, technical solutions and advantages of the present invention more apparent, and all other examples obtained by those skilled in the art without making any inventive effort are within the scope of the present invention based on the examples in the present invention.
The Al intensity is the relative value of a.u. of an Al component tested by an SIMS secondary ion mass spectrometer, and the absolute limitation of the value is not carried out; the In intensity is a relative value of the In component a.u. measured by the SIMS secondary ion mass spectrometer, and is not absolutely limited In numerical value.
Comparative example 1
This comparative example provides a conventional laser having a structure as shown in fig. 1, which includes, in order from bottom to top, a substrate 1, a lower confinement layer 2, a lower waveguide layer 3, an active layer 4, an upper waveguide layer 5, an electron blocking layer 6, and an upper confinement layer 7, specifically:
the substrate 1 is a GaN substrate;
the lower limiting layer 2 is AlGaN, the thickness is 100nm, and the doping concentration of Si is 1E18cm -3 ；
The lower waveguide layer3 is GaN, the thickness is 100nm, and the doping concentration of Si is 1E18cm -3 ；
The active layer 4 is a periodic structure formed by a well layer and a barrier layer, the well layer is an InGaN well layer, the barrier layer is GaN, and the period number m is 3;
the upper waveguide layer 5 is InGaN with the thickness of 100nm and the doping concentration of Si of 1E18cm -3 ；
The electron blocking layer 6 is AlGaN, the thickness is 100nm, and the doping concentration of Mg is 1E19cm -3 。
The upper confinement layer 7 is AlInGaN, the thickness is 100nm, and the doping concentration of Mg is 1E19cm -3 。
Example 1
The present embodiment provides a semiconductor laser 1 having exciton resonance and hall transport layers, the structure of which is shown in fig. 2, and the specific structure of which is referred to comparative example 1, except that:
the lower limiting layer 2 structurally comprises a first lower limiting layer 21, a second lower limiting layer 22, a third lower limiting layer 23, a fourth lower limiting layer 24 and a fifth lower limiting layer 25 from bottom to top in sequence;
the material of the first lower limiting layer 21 is Al x Ga 1-x N, al strength 1.2, in strength 1.2, si doping concentration 1E20, thickness 10nm, C impurity concentration 1E16, H impurity concentration 1E16, O impurity concentration 6E15;
the material of the second lower limiting layer 22 is Al y Ga 1-y N, al intensity of 1.25, in intensity of 1.3, si doping concentration of 1E18, thickness of 1000nm, C impurity concentration of 1E17, H impurity concentration of 5E16, O impurity concentration of 8E15;
the material of the third lower confinement layer 23 is In a Ga 1-a N, al intensity is 1, in intensity is 1.5, si doping concentration is 2E19, thickness is 50nm, C impurity concentration is 5E16, H impurity concentration is 7E16, O impurity concentration is 1E15;
the material of the fourth lower limiting layer 24 is Al z Ga 1-z N, al intensity is 1.3, in intensity is 1, si doping concentration is 1E17, thickness is 500nm, C impurity concentration is 5E17, H impurity concentration is 1E18, O impurity concentration is 1E17;
the fifth lower confinement layer 25 is made of GaN, and has an Al strength of 1.1, an in strength of 1.1, a si doping concentration of 5E17, a thickness of 100nm, a c impurity concentration of 1E15, an h impurity concentration of 2E17, and an o impurity concentration of 1E16.
Example 2
The present embodiment provides a semiconductor laser 2 having exciton resonance and hall transport layers, the structure of which is shown in fig. 2, and the specific structure of which is referred to comparative example 1, except that:
the lower limiting layer comprises a first lower limiting layer 21, a second lower limiting layer 22, a third lower limiting layer 23, a fourth lower limiting layer 24 and a fifth lower limiting layer 25 in sequence from bottom to top;
the material of the first lower limiting layer 21 is Al x Ga 1-x N, al intensity of 1.12, in intensity of 1.25, si doping concentration of 8E19, thickness of 50nm, C impurity concentration of 8E15, H impurity concentration of 3E16, O impurity concentration of 7E15;
the material of the second lower limiting layer 22 is Al y Ga 1-y N, al strength 1.2, in strength 1.3, si doping concentration 1E18, thickness 4000nm, C impurity concentration 3E16, H impurity concentration 9E16, O impurity concentration 1E16;
the material of the third lower confinement layer 23 is In a Ga 1-a N, al intensity is 1, in intensity is 1.5, si doping concentration is 1E19, thickness is 200nm, C impurity concentration is 1E16, H impurity concentration is 3E17, O impurity concentration is 3E15;
the material of the fourth lower limiting layer 24 is Al z Ga 1-z N, al intensity of 1.26, in intensity of 1, si doping concentration of 5E17, thickness of 2000nm, C impurity concentration of 7E17, H impurity concentration of 5E18, O impurity concentration of 2E17;
the fifth lower confinement layer 25 is made of GaN, and has an Al strength of 1.05, an in strength of 1.2, a si doping concentration of 8E17, a thickness of 500nm, a c impurity concentration of 3E15, an h impurity concentration of 8E17, and an o impurity concentration of 8E16.
Example 3
The present embodiment provides a semiconductor laser 3 having exciton resonance and hall transport layers, the structure is as shown in fig. 2, and the specific structure is as follows in order from bottom to top:
the substrate 1 is a GaAs substrate;
the lower limiting layer 2 comprises a first lower limiting layer 21, a second lower limiting layer 22, a third lower limiting layer 23, a fourth lower limiting layer 24 and a fifth lower limiting layer 25 in sequence from bottom to top;
the material of the first lower limiting layer 21 is Al x Ga 1-x N, al intensity of 1.15, in intensity of 1.2, si doping concentration of 6E19, thickness of 50nm, C impurity concentration of 9E15, H impurity concentration of 5E16, O impurity concentration of 6E15;
the material of the second lower limiting layer 22 is Al y Ga 1-y N, al intensity of 1.3, in intensity of 1.3, si doping concentration of 1E18, thickness of 3000nm, C impurity concentration of 4E16, H impurity concentration of 5E17, O impurity concentration of 1E16;
the material of the third lower confinement layer 23 is In a Ga 1-a N, al intensity is 1, in intensity is 1.5, si doping concentration is 1E19, thickness is 500nm, C impurity concentration is 1E16, H impurity concentration is 8E17, O impurity concentration is 1E15;
the material of the fourth lower limiting layer 24 is Al z Ga 1-z N, al intensity of 1.6, in intensity of 1, si doping concentration of 3E17, thickness of 2000nm, C impurity concentration of 7E17, H impurity concentration of 1E19, O impurity concentration of 3E17;
the fifth lower confinement layer 25 is made of GaN, and has an Al strength of 1.05, an in strength of 1.05, a si doping concentration of 8E17, a thickness of 1000nm, a c impurity concentration of 3E15, an h impurity concentration of 4E18, and an o impurity concentration of 6E16.
The lower waveguide layer 3 is a combination of InGaN, alInGaN, the thickness is 1000nm, and the doping concentration of Si is 1E19cm -3 ；
The active layer 4 is a periodic structure formed by a well layer and a barrier layer, the well layer is an InGaN well layer, the barrier layer is a combination of AlGaN and AlInN, and the cycle number m is 4;
the upper waveguide layer 5 is a InGaN, alInGaN combination with a thickness of 50nm and a Si doping concentration of 1E18cm -3 ；
The electron blocking layer 6 is a combination of GaN, alN, alInGaN, the thickness is 1000nm, and the doping concentration of Mg is 1E18cm -3 ；
The upper limiting layer 7 is a combination of AlN and AlInN, the thickness is 1000nm, and the doping concentration of Mg is 1E19cm -3 。
Example 4
The present embodiment provides a semiconductor laser 4 having exciton resonance and hall transport layers, the structure is as shown in fig. 2, and the specific structure is as follows in order from bottom to top:
the substrate 1 is a sapphire substrate;
the lower limiting layer 2 comprises a first lower limiting layer 21, a second lower limiting layer 22, a third lower limiting layer 23, a fourth lower limiting layer 24 and a fifth lower limiting layer 25 in sequence from bottom to top;
the material of the first lower limiting layer 21 is Al x Ga 1-x N, al intensity is 1.3, in intensity is 1.3, si doping concentration is 1E19, thickness is 100nm, C impurity concentration is 7E15, H impurity concentration is 5E16, O impurity concentration is 9E15;
the material of the second lower limiting layer 22 is Al y Ga 1-y N, al strength 1.5, in strength 1.4, si doping concentration 1E18, thickness 2000nm, C impurity concentration 8E16, H impurity concentration 7E16, O impurity concentration 1E16;
the material of the third lower confinement layer 23 is In a Ga 1-a N, al intensity 1, in intensity 1.6, si doping concentration 5E18, thickness 200nm, C impurity concentration 3E16, H impurity concentration 1E17, O impurity concentration 2E15;
the material of the fourth lower limiting layer 24 is Al z Ga 1-z N, al intensity of 1.6, in intensity of 1, si doping concentration of 3E17, thickness of 1000nm, C impurity concentration of 1E17, H impurity concentration of 8E18, O impurity concentration of 3E17;
the fifth lower confinement layer 25 is made of GaN, and has an Al strength of 1.2, an in strength of 1.2, a si doping concentration of 6E17, a thickness of 500nm, a c impurity concentration of 4E15, an h impurity concentration of 7E17, and an o impurity concentration of 7E16.
The lower waveguide layer 3 is AlInGaN,thickness is 500nm, si doping concentration is 1E17 cm -3 ；
The active layer 4 is a periodic structure formed by a well layer and a barrier layer, the well layer is an InGaN well layer, the barrier layer is a GaN, alInGaN, alGaN combination, and the period number m is 1;
the upper waveguide layer 5 is a InGaN, alInGaN combination with a thickness of 100nm and a Si doping concentration of 1E17 cm -3 ；
The electron blocking layer 6 is a AlInGaN, alN, alInN combination, the thickness is 100nm, and the doping concentration of Mg is 1E18cm -3 ；
The upper limiting layer 7 is a AlInGaN, alN, alInN combination with the thickness of 100nm and the doping concentration of Mg of 1E19cm -3 。
The performance test was performed on the semiconductor lasers in the above comparative examples, and the semiconductor lasers having exciton resonance and hall transport layers in examples 1 to 4, and the results are shown in table 1 below:
table 1 data of performance test of semiconductor lasers in comparative example 1 and examples 1 to 4
Fig. 3 is a structural SIMS secondary ion mass spectrum of a semiconductor laser having exciton resonance and hall transport layers of embodiment 1 of the present invention; as can be seen from the test results of table 1 and fig. 3, the semiconductor lasers with exciton resonance and hall transport layers of the present invention in examples 1-4 have an average beam quality factor of 65%, an average slope efficiency of 73%, an average threshold current density of 58%, an average optical power of 57%, and an average internal optical loss of 54% as compared to the conventional lasers.
Those skilled in the art will appreciate that the foregoing is merely a few, but not all, embodiments of the invention. It should be noted that many variations and modifications can be made by those skilled in the art, and all variations and modifications which do not depart from the scope of the invention as defined in the appended claims are intended to be protected.
Claims (10)
1. A semiconductor laser with exciton resonance and hall transport layers, comprising a substrate (1), a lower limiting layer (2), a lower waveguide layer (3), an active layer (4), an upper waveguide layer (5), an electron blocking layer (6) and an upper limiting layer (7) sequentially from bottom to top, wherein the lower limiting layer (2) sequentially comprises a first lower limiting layer (21), a second lower limiting layer (22), a third lower limiting layer (23), a fourth lower limiting layer (24) and a fifth lower limiting layer (25) from bottom to top, the thicknesses, al intensities, in intensities, si doping concentrations, carbon impurity concentrations, hydrogen impurity concentrations and oxygen impurity concentrations of the first lower limiting layer (21), the second lower limiting layer (22), the third lower limiting layer (23), the fourth lower limiting layer (24) and the fifth lower limiting layer (25) are all different and are designed In a gradient according to a certain sequence, the exciton resonance and hall transport structure is jointly composed, the Al intensities are the relative values of any unit of an Al component tested by an S secondary ion mass spectrometer, and the In which is the relative value of any unit of an In component tested by the SIMS secondary ion mass spectrometer.
2. The semiconductor laser with the exciton resonance and hall transport layer according to claim 1, characterized In that the exciton resonance of the lower confinement layer (2) is designed In a gradient with Al intensity and In intensity of each layer In the hall transport structure, the Al intensity of each layer satisfying the fourth lower confinement layer (24) > the second lower confinement layer (22) > the first lower confinement layer (21) > the fifth lower confinement layer (25) > the third lower confinement layer (23); the In strength of each layer satisfies the third lower limit layer (23) > the second lower limit layer (22) > the first lower limit layer (21) > the fifth lower limit layer (25) > the fourth lower limit layer (24).
3. The semiconductor laser with exciton resonance and hall transport layer according to claim 1, characterized in that the exciton resonance of the lower confinement layer (2) and the thickness of each layer in the hall transport structure are designed in a gradient, the thickness of the first lower confinement layer (21) is T1, the thickness of the second lower confinement layer (22) is T2, the thickness of the third lower confinement layer (23) is T3, the thickness of the fourth lower confinement layer (24) is T4, the thickness of the fifth lower confinement layer (25) is T5, wherein 10 nm.ltoreq.t1 < T3 < T5 < T4 < T2.ltoreq.5000 nm.
4. The semiconductor laser with exciton resonance and hall transport layer according to claim 1, wherein the exciton resonance of the lower confinement layer (2) and the Si doping concentration of each layer in the hall transport structure are designed in a gradient, the Si doping concentration of the first lower confinement layer (21) is S1, the Si doping concentration of the second lower confinement layer (22) is S2, the Si doping concentration of the third lower confinement layer (23) is S3, the Si doping concentration of the fourth lower confinement layer (24) is S4, the Si doping concentration of the fifth lower confinement layer (25) is S5, wherein 1E20cm -3 ≥S1>S3>S2>S5>S4≥1E17cm -3 。
5. The semiconductor laser with exciton resonance and hall transport layer according to claim 1, wherein the exciton resonance of the lower confinement layer (2) and the carbon impurity concentration contained in each layer in the hall transport structure are designed in a gradient, the carbon impurity concentration of the first lower confinement layer (21) is C1, the carbon impurity concentration of the second lower confinement layer (22) is C2, the carbon impurity concentration of the third lower confinement layer (23) is C3, the carbon impurity concentration of the fourth lower confinement layer (24) is C4, the carbon impurity concentration of the fifth lower confinement layer (25) is C5, wherein 1E18cm -3 ≥C4>C2>C3>C1>C5≥1E15cm -3 。
6. The semiconductor laser with exciton resonance and hall transport layer according to claim 1, wherein the exciton resonance of the lower confinement layer (2) and the oxygen impurity concentration contained in each layer in the hall transport structure are designed in a gradient, the oxygen impurity concentration of the first lower confinement layer (21) is O1, the oxygen impurity concentration of the second lower confinement layer (22) is O2, the oxygen impurity concentration of the third lower confinement layer (23) is O3, the oxygen impurity concentration of the fourth lower confinement layer (24) is O4, the oxygen impurity concentration of the fifth lower confinement layer (25) is O5, wherein 5E17cm -3 ≥O4>O5>O2>O1>O3≥1E15cm -3 。
7. According to claim 1The semiconductor laser with the exciton resonance and Hall transport layers is characterized in that the exciton resonance and Hall transport structure of the lower limiting layer (2) has gradient design of hydrogen impurity concentration contained in each layer, the hydrogen impurity concentration of the first lower limiting layer (21) is H1, the hydrogen impurity concentration of the second lower limiting layer (22) is H2, the hydrogen impurity concentration of the third lower limiting layer (23) is H3, the hydrogen impurity concentration of the fourth lower limiting layer (24) is H4, the hydrogen impurity concentration of the fifth lower limiting layer (25) is H5, wherein 1E19cm -3 ≥H4>H5>H3>H2>H1≥1E16cm -3 。
8. The semiconductor laser with exciton resonance and hall transport layer according to claim 1 or 2, characterized in that the lower confinement layer (2), lower waveguide layer (3), active layer (4), upper waveguide layer (5), electron blocking layer (6), upper confinement layer (7) is GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or a combination of two or more of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP.
9. The semiconductor laser with exciton resonance and hall transport layer according to claim 8, wherein the semiconductor laser is a semiconductor deep ultraviolet laser with an emission wavelength of 200nm to 300nm, or a semiconductor violet ultraviolet laser with an emission wavelength of 300nm to 420nm, or a semiconductor blue laser with an emission wavelength of 420nm to 480nm, or a semiconductor green laser with an emission wavelength of 500nm to 550nm, or a semiconductor red and yellow laser with an emission wavelength of 550nm to 700nm, or a semiconductor infrared laser with an emission wavelength of 800nm to 1000nm, or a semiconductor far infrared laser with an emission wavelength of 1000nm to 1600 nm.
10. The semiconductor laser with exciton resonance and hall transport layer as claimed in claim 1, characterized in that the substrate (1) is sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire-AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
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