CN116316065A - Semiconductor laser with optical field loss control layer - Google Patents

Semiconductor laser with optical field loss control layer Download PDF

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Publication number
CN116316065A
CN116316065A CN202310319900.1A CN202310319900A CN116316065A CN 116316065 A CN116316065 A CN 116316065A CN 202310319900 A CN202310319900 A CN 202310319900A CN 116316065 A CN116316065 A CN 116316065A
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layer
waveguide layer
equal
optical field
concentration ratio
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李水清
阚宏柱
请求不公布姓名
王星河
黄军
胡志勇
张江勇
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Anhui Geen Semiconductor Co ltd
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Anhui Geen Semiconductor Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement

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  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention provides a semiconductor laser with an optical field loss control layer, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electronic blocking layer and an upper limiting layer which are sequentially arranged from bottom to top, wherein the upper waveguide layer and the lower waveguide layer form the optical field loss control layer; the upper waveguide layer and the lower waveguide layer contain In, and the content of In components is smaller than that of In components In the active layer; the Si/0 concentration ratio in the lower waveguide layer is more than or equal to the Si/0 concentration ratio of the upper waveguide layer; the Si/C concentration ratio in the lower waveguide layer is larger than or equal to that in the upper waveguide layer. The invention reduces the internal optical loss of the upper waveguide layer and the lower waveguide layer, enhances the limiting factor of the laser, limits more light in the active layer, reduces the internal loss of the laser, reduces the light absorption loss of the unionized Mg impurity of the electron blocking layer, improves the hole transportation and refractive index dispersion of the active layer of the laser, and improves the peak gain and the mode gain of the laser, thereby reducing the threshold value and improving the optical power and the quantum efficiency of the laser.

Description

Semiconductor laser with optical field loss control layer
Technical Field
The present application relates to the field of semiconductor optoelectronic devices, and in particular, to a semiconductor laser having a light field loss control layer.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The laser has various types and various classification modes, and mainly comprises solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like.
The laser is largely different from the nitride semiconductor light emitting diode:
1) The laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level;
2) Use of lasers current densities up to KA/cm 2 More than 2 orders of magnitude higher than nitride light emitting diodes, thereby causing stronger electron leakage, more severe auger recombination, stronger polarization effect, more severe electron-hole mismatch, resulting in more severe efficiency decay Droop effect;
3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated;
4) The principle is different: the light emitting diode generates radiation composite luminescence by electron hole transition to a quantum well or a p-n junction under the action of external voltage, and the laser can perform lasing under the condition that the lasing condition is satisfied, the inversion distribution of carriers in an active area is required to be satisfied, stimulated radiation light oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss by satisfying a threshold condition, and finally laser is output.
The nitride semiconductor laser has the following problems:
1) The absorption loss of the optical waveguide is high;
2) The increase of the In component of the quantum well can generate fluctuation and strain of the In component, the gain spectrum of the laser is widened, and the peak gain is reduced;
3) The In component of the quantum well is increased, and the thermal stability is deteriorated;
4) The valence band step difference of the laser is increased, the hole is more difficult to transport in the quantum well, the carrier injection is uneven, and the gain is uneven;
5) Refractive index dispersion of the laser, the limiting factor decreases with increasing wavelength, resulting in a decrease in mode gain of the laser;
6) Intrinsic carbon impurities compensate acceptors in p-type semiconductors, destroy p-type, etc.; the ionization rate of p-type doping is low and a large amount of non-ionized Mg acceptor impurities are one of the main sources of internal optical losses.
Disclosure of Invention
In order to solve one of the above technical problems, the present invention provides a semiconductor laser having an optical field loss control layer.
The embodiment of the invention provides a semiconductor laser with an optical field loss control layer, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electronic blocking layer and an upper limiting layer which are sequentially arranged from bottom to top, wherein the upper waveguide layer and the lower waveguide layer form the optical field loss control layer;
in is contained In the upper waveguide layer and the lower waveguide layer of the optical field loss control layer, and the content of In components In the upper waveguide layer and the lower waveguide layer is smaller than that In the active layer;
the Si/0 concentration ratio in the lower waveguide layer of the optical field loss control layer is more than or equal to the Si/0 concentration ratio of the upper waveguide layer;
the Si/C concentration ratio in the lower waveguide layer of the optical field loss control layer is more than or equal to that of the upper waveguide layer.
Preferably, the In component content In the upper confinement layer from the active layer, the upper waveguide layer, the electron blocking layer is In an arc decreasing trend.
Preferably, the In composition content In the active layer, the lower waveguide layer, and the lower confinement layer decreases In an arc.
Preferably, the maximum value of the Si/0 concentration ratio in the lower waveguide layer of the optical field loss control layer is more than 10 times of the minimum value of the Si/0 concentration ratio in the upper waveguide layer.
Preferably, the maximum value of the Si/C concentration ratio in the lower waveguide layer of the optical field loss control layer is more than 10 times of the minimum value of the Si/C concentration ratio in the upper waveguide layer.
Preferably, the Si/0 concentration ratio in the active layer is larger than or equal to that in the lower waveguide layer, and the Si/0 concentration ratio in the upper waveguide layer.
Preferably, the maximum value of the Si/0 concentration ratio in the active layer is more than 5 times of the minimum value of the Si/0 concentration ratio in the lower waveguide layer.
Preferably, the maximum value of the Si/0 concentration ratio in the active layer is more than 10 times of the minimum value of the Si/0 concentration ratio in the upper waveguide layer.
Preferably, the active layer is a periodic structure formed by a well layer and a barrier layer, and the period is m is more than or equal to 1 and less than or equal to 3; the well layer of the active layer is any one or any combination of GaN, inGaN, inN, alInN, alInGaN, alGaN, and the thickness p is more than or equal to 5 and less than or equal to 100 angstroms; the barrier layer of the active layer is any one or any combination of GaN, inGaN, inN, alInN, alInGaN, alN, and the thickness q is more than or equal to 10 and less than or equal to 200 angstroms; the thickness of the lower waveguide layer is x, x is more than or equal to 10 and less than or equal to 9000 angstroms; the thickness of the upper waveguide layer is y, wherein y is more than or equal to 10 and less than or equal to 9000 angstroms; the thickness of the lower limiting layer is z, wherein z is more than or equal to 10 and less than or equal to 90000 angstroms; the thickness of the upper limiting layer and the electron blocking layer is n, n is more than or equal to 10 and less than or equal to 80000.
Preferably, the lower confinement layer, lower waveguide layer, upper waveguide layer, electron blocking layer, upper confinement layer comprises GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaPAny one or any combination; the substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
The beneficial effects of the invention are as follows: the invention combines the upper waveguide layer and the lower waveguide layer into the optical field loss control layer, and adds In into the upper waveguide layer and the lower waveguide layer, and simultaneously regulates and controls the Si/0 concentration ratio and the Si/C concentration ratio In the upper waveguide layer and the lower waveguide layer, reduces the internal optical loss of the upper waveguide layer and the lower waveguide layer, enhances the limiting factor of the laser, limits more light In the active layer, reduces the internal loss of the laser, reduces the light absorption loss of unionized Mg impurity of the electron blocking layer, improves the hole transportation and the refractive index dispersion of the active layer of the laser, and improves the peak gain and the mode gain of the laser, thereby reducing the threshold value of the laser and improving the light power and the quantum efficiency.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute an undue limitation to the application. In the drawings:
FIG. 1 is a schematic diagram of a semiconductor laser with an optical field loss control layer according to an embodiment of the present invention;
fig. 2 is a SIMS secondary ion mass spectrum of a semiconductor laser with an optical field loss control layer according to an embodiment of the present invention.
Reference numerals:
100. a substrate, 101, a lower confinement layer, 102, a lower waveguide layer, 103, an active layer, 104, an upper waveguide layer, 105, an electron blocking layer, 106, an upper confinement layer, 107, and a light field loss control layer.
Detailed Description
In order to make the technical solutions and advantages of the embodiments of the present application more apparent, the following detailed description of exemplary embodiments of the present application is given with reference to the accompanying drawings, and it is apparent that the described embodiments are only some of the embodiments of the present application and not exhaustive of all the embodiments. It should be noted that, in the case of no conflict, the embodiments and features in the embodiments may be combined with each other.
As shown in fig. 1, the present embodiment proposes a semiconductor laser having an optical field loss control layer, including a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 disposed in this order from bottom to top, wherein the upper waveguide layer 104 and the lower waveguide layer 102 form an optical field loss control layer 107.
Specifically, as shown In fig. 2, in is contained In the upper waveguide layer 104 and the lower waveguide layer 102 of the optical field loss control layer 107, and the In component content In the upper waveguide layer 104 and the lower waveguide layer 102 is smaller than the In component content In the active layer 103, which is specifically expressed as follows:
the In component content In the upper limiting layer 106 from the active layer 103, the upper waveguide layer 104, the electron blocking layer 105 is In an arc decreasing trend; the In composition content In the active layer 103, the lower waveguide layer 102, and the lower confinement layer 101 tends to decrease In an arc.
Further, the concentration ratio of Si/0 in the lower waveguide layer 102 of the optical field loss control layer 107 is greater than or equal to the concentration ratio of Si/0 in the upper waveguide layer 104, specifically expressed as:
the maximum value of the Si/0 concentration ratio in the lower waveguide layer 102 of the optical field loss control layer 107 is 10 times or more the minimum value of the Si/0 concentration ratio in the upper waveguide layer 104.
Meanwhile, in this embodiment, the Si/0 concentration ratio of the active layer 103 and the Si/0 concentration ratio of the upper waveguide layer 104 and the lower waveguide layer 102 in the optical field loss control layer 107 form a Si/0 concentration ratio interface, and are steeper Si/0 concentration ratio interfaces. Specifically, the concentration ratio of Si/0 in the active layer 103 is equal to or greater than the concentration ratio of Si/0 in the lower waveguide layer 102 is equal to or greater than the concentration ratio of Si/0 in the upper waveguide layer 104, and the maximum value of the concentration ratio of Si/0 in the active layer 103 is 5 times or more than the minimum value of the concentration ratio of Si/0 in the lower waveguide layer 102, and the maximum value of the concentration ratio of Si/0 in the active layer 103 is 10 times or more than the minimum value of the concentration ratio of Si/0 in the upper waveguide layer 104.
Furthermore, the Si/C concentration ratio in the lower waveguide layer 102 of the optical field loss control layer 107 is greater than or equal to the Si/C concentration ratio in the upper waveguide layer 104, which is specifically expressed as follows:
the maximum value of the Si/C concentration ratio in the lower waveguide layer 102 of the optical field loss control layer 107 is 10 times or more the minimum value of the Si/C concentration ratio in the upper waveguide layer 104.
In the present embodiment, the optical field loss control layer 107 is formed by the upper waveguide layer 104 and the lower waveguide layer 102 doped with In, and the upper waveguide layer 104 and the lower waveguide layer 102 have a specific In composition arc decreasing trend, a specific Si/0 concentration ratio, and a specific Si/C concentration ratio. Wherein the Si/0 concentration ratio of the optical field loss control layer 107 and the Si/0 concentration ratio of the active layer 103 form two steep Si/0 concentration ratio interfaces. By controlling the self components of the optical field loss control layer 107 and acting together with the Si/0 concentration ratio interface formed by the active layer 103, the internal optical loss of the upper waveguide layer 104 and the lower waveguide layer 102 is reduced, the internal optical loss is reduced by 83%, the limiting factor of the laser is enhanced, the limiting factor is increased from 1.5% to 2.2% by about 47%, more light is limited in the active layer 103, the internal loss of the laser is reduced, the light absorption loss of unionized Mg impurity of the electron blocking layer 105 is reduced, the internal optical loss of the laser is reduced from 60cm < -1 > to 10cm < -1 >, the internal optical loss of 83% is reduced, the hole transport and refractive index dispersion of the active layer 103 of the laser are improved, the peak gain and the mode gain of the laser are improved, the threshold value and the optical power and the quantum efficiency of the laser are reduced, the optical power is increased from 3.5W to about 49%, and the external quantum efficiency is increased from 24.5% to about 39.5%, as shown in the following table:
traditional laser Laser of this embodiment Amplitude of variation
Threshold current Density (kA/cm) 2 ) 2.4 0.8 -67％
Optical power (W) 3.5 5.2 49％
Threshold voltage (V) 6.8 5 -26％
Limiting factor 1.50％ 2.20％ 47％
Internal optical loss (cm) -1 ) 60 10 -83％
External quantum efficiency 24.50％ 39.50％ 61％
Further, the active layer 103 is a periodic structure formed by a well layer and a barrier layer, and the period is m is more than or equal to 1 and less than or equal to 3; the well layer of the active layer 103 is any one or any combination of GaN, inGaN, inN, alInN, alInGaN, alGaN, and the thickness p is more than or equal to 5 and less than or equal to 100 angstroms; the barrier layer of the active layer 103 is any one or any combination of GaN, inGaN, inN, alInN, alInGaN, alN, and the thickness q is more than or equal to 10 and less than or equal to 200.
The thickness of the lower waveguide layer 102 is x, x is more than or equal to 10 and less than or equal to 9000 angstroms; the thickness of the upper waveguide layer 104 is y, which is more than or equal to 10 and less than or equal to 9000 angstroms; the thickness of the lower limiting layer 101 is z, wherein z is more than or equal to 10 and less than or equal to 90000 Emeter; the thickness of the upper confinement layer 107 and the electron blocking layer 105 is n.10.ltoreq.n.ltoreq.80000. Mu.m.
Further, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 107 include GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP.
The substrate 100 includes any one of sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, sapphire/SiNx, magnesium aluminate spinel MgAl2O4, mgO, znO, zrB2, liAlO2, and LiGaO2 composite substrates.
In this embodiment, the upper waveguide layer 104 and the lower waveguide layer 102 are combined into the optical field loss control layer 107, in is added into the upper waveguide layer 104 and the lower waveguide layer 102, and simultaneously the Si/0 concentration ratio and the Si/C concentration ratio In the upper waveguide layer 104 and the lower waveguide layer 102 are regulated and controlled, so that the internal optical loss of the upper waveguide layer 104 and the lower waveguide layer 102 is reduced, the limiting factor of the laser is enhanced, more light is limited In the active layer 103, the internal loss of the laser is reduced, the light absorption loss of unionized Mg impurities of the electron blocking layer 105 is reduced, the hole transport and refractive index dispersion of the active layer 103 of the laser are improved, and the peak gain and the mode gain of the laser are improved, thereby reducing the threshold value of the laser and improving the optical power and the quantum efficiency.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present application without departing from the spirit or scope of the application. Thus, if such modifications and variations of the present application fall within the scope of the claims and the equivalents thereof, the present application is intended to cover such modifications and variations.

Claims (10)

1. The semiconductor laser with optical field loss control layer comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer which are sequentially arranged from bottom to top, and is characterized in that the upper waveguide layer and the lower waveguide layer form the optical field loss control layer;
in is contained In the upper waveguide layer and the lower waveguide layer of the optical field loss control layer, and the content of In components In the upper waveguide layer and the lower waveguide layer is smaller than that In the active layer;
the Si/0 concentration ratio in the lower waveguide layer of the optical field loss control layer is more than or equal to the Si/0 concentration ratio of the upper waveguide layer;
the Si/C concentration ratio in the lower waveguide layer of the optical field loss control layer is more than or equal to that of the upper waveguide layer.
2. The semiconductor laser with optical field loss control layer according to claim 1, wherein the In composition content In the upper confinement layer from the active layer, the upper waveguide layer, and the electron blocking layer is In an arc decreasing trend.
3. The semiconductor laser with optical field loss control layer according to claim 1, wherein the In composition content In the active layer, the lower waveguide layer, and the lower confinement layer decreases In an arc.
4. The semiconductor laser with an optical field loss control layer according to claim 1, wherein a maximum value of a Si/0 concentration ratio in a lower waveguide layer of the optical field loss control layer is 10 times or more than a minimum value of a Si/0 concentration ratio in an upper waveguide layer.
5. The semiconductor laser with an optical field loss control layer according to claim 1, wherein a maximum value of the Si/C concentration ratio in the lower waveguide layer of the optical field loss control layer is 10 times or more than a minimum value of the Si/C concentration ratio in the upper waveguide layer.
6. The semiconductor laser with optical field loss control layer according to claim 1, wherein the Si/0 concentration ratio in the active layer is equal to or greater than the Si/0 concentration ratio in the lower waveguide layer.
7. The semiconductor laser with optical field loss control layer according to claim 6, wherein the maximum value of the Si/0 concentration ratio in the active layer is 5 times or more than the minimum value of the Si/0 concentration ratio in the lower waveguide layer.
8. The semiconductor laser with optical field loss control layer according to claim 6, wherein the maximum value of the Si/0 concentration ratio in the active layer is 10 times or more than the minimum value of the Si/0 concentration ratio in the upper waveguide layer.
9. The semiconductor laser with the optical field loss control layer according to claim 1, wherein the active layer is a periodic structure consisting of a well layer and a barrier layer, and the period is m is 1-3; the well layer of the active layer is any one or any combination of GaN, inGaN, inN, alInN, alInGaN, alGaN, and the thickness p is more than or equal to 5 and less than or equal to 100 angstroms; the barrier layer of the active layer is any one or any combination of GaN, inGaN, inN, alInN, alInGaN, alN, and the thickness q is more than or equal to 10 and less than or equal to 200 angstroms; the thickness of the lower waveguide layer is x, x is more than or equal to 10 and less than or equal to 9000 angstroms; the thickness of the upper waveguide layer is y, wherein y is more than or equal to 10 and less than or equal to 9000 angstroms; the thickness of the lower limiting layer is z, wherein z is more than or equal to 10 and less than or equal to 90000 angstroms; the thickness of the upper limiting layer and the electron blocking layer is n, n is more than or equal to 10 and less than or equal to 80000.
10. The semiconductor laser with optical field loss control layer according to claim 1, wherein the lower confinement layer, lower waveguide layer,An upper waveguide layer, an electron blocking layer, and an upper confinement layer including GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP; the substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
CN202310319900.1A 2023-03-29 2023-03-29 Semiconductor laser with optical field loss control layer Pending CN116316065A (en)

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CN202310319900.1A CN116316065A (en) 2023-03-29 2023-03-29 Semiconductor laser with optical field loss control layer

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Application Number Priority Date Filing Date Title
CN202310319900.1A CN116316065A (en) 2023-03-29 2023-03-29 Semiconductor laser with optical field loss control layer

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CN116316065A true CN116316065A (en) 2023-06-23

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