CN117691468A - GaN-based semiconductor ultraviolet laser diode - Google Patents
GaN-based semiconductor ultraviolet laser diode Download PDFInfo
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Abstract
The invention provides a GaN-based semiconductor ultraviolet laser diode, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top, wherein a substrate mode inhibiting layer is arranged between the substrate and the lower limiting layer, the substrate mode inhibiting layer is provided with Si doping concentration distribution, C element distribution, O element distribution, H element distribution and Al element distribution, the substrate is provided with Si doping concentration distribution, C element distribution, O element distribution and H element distribution, and the lower limiting layer is provided with C element distribution, O element distribution and H element distribution. The invention can inhibit the leakage of the substrate mode, eliminate the lobe in the far-field distribution image of the laser, prevent high kink, solve the standing wave formed by the leakage of the light field mode to the substrate, ensure that the main laser beam has no ripple, improve the quality factor of the beam, improve the quality of the far-field FFP, reduce the absorption loss of the optical waveguide, improve the refractive index dispersion and reduce the internal optical loss.
Description
Technical Field
The application relates to the field of semiconductor photoelectric devices, in particular to a GaN-based semiconductor ultraviolet laser diode.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The laser has various types and various classification modes, and mainly comprises solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like.
The laser is largely different from the nitride semiconductor light emitting diode:
1) The laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level;
2) Use of lasers current densities up to KA/cm 2 More than 2 orders of magnitude higher than nitride light emitting diodes, thereby causing stronger electron leakage, more severe auger recombination, stronger polarization effect, more severe electron-hole mismatch, resulting in more severe efficiency decay Droop effect;
3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated;
4) The principle is different: the light emitting diode generates radiation composite luminescence by transferring electron holes to an active layer or a p-n junction under the action of external voltage, and the laser can perform lasing only when the lasing condition is satisfied, the inversion distribution of carriers in an active area is necessarily satisfied, the stimulated radiation oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss when the threshold condition is satisfied, and finally laser is output.
The nitride semiconductor laser has the following problems:
1) The absorption loss of the optical waveguide is high, inherent carbon impurities compensate acceptors in a p-type semiconductor, damage p-type and the like, the ionization rate of p-type doping is low, a large amount of unionized Mg acceptors impurities can cause the increase of internal optical loss, the refractive index dispersion of the laser is realized, the fluctuation of the concentration of high-concentration carriers influences the refractive index of an active layer, the limiting factor is reduced along with the increase of wavelength, and the mode gain of the laser is reduced;
2) Refractive index dispersion of the laser, the limiting factor decreases with increasing wavelength, resulting in a decrease in mode gain of the laser;
3) The thickness of the lower limiting layer is increased, so that the refractive index of the limiting layer can be reduced, but the thickness of the lower limiting layer is increased, so that the component regulation range is limited, and the problems of cracking, bending, quality reduction and the like are easily caused; meanwhile, the optical field is dissipated, the optical field mode leaks to the substrate to form standing waves, so that the substrate mode suppression efficiency is low, and the FFP quality of the far-field image is poor.
Disclosure of Invention
In order to solve one of the technical problems, the invention provides a GaN-based semiconductor ultraviolet laser diode.
The embodiment of the invention provides a GaN-based semiconductor ultraviolet laser diode, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top, wherein a substrate mode inhibiting layer is arranged between the substrate and the lower limiting layer, the substrate mode inhibiting layer is provided with Si doping concentration distribution, C element distribution, O element distribution, H element distribution and Al element distribution, the substrate is provided with Si doping concentration distribution, C element distribution, O element distribution and H element distribution, and the lower limiting layer is provided with C element distribution, O element distribution and H element distribution.
Preferably, the Si doping concentration profile of the substrate mode suppression layer has a function y=cosx/e x Or y=e x A sinx curve distribution;
the C element distribution, O element distribution and H element distribution of the substrate mode suppression layer have a function y= (a) x -1)/(a x +1)(0<a<1) Curve distribution;
the Al element distribution of the substrate mode suppression layer has a function y=x/lnx or y=e x Fourth quadrant curve distribution of/lnx.
Preferably, the Al element distribution peak position of the substrate mode suppression layer is in a downward trend toward the substrate direction, and the downward angle is α: alpha is more than or equal to 90 degrees and more than or equal to 45 degrees;
the Si doping concentration distribution peak position of the substrate mode suppression layer is in a descending trend towards the substrate direction, and the descending angle is beta: beta is more than or equal to 90 degrees and more than or equal to 40 degrees;
the Si doping concentration distribution peak position of the substrate mode suppression layer is downward in the direction of the limiting layer, and the downward angle is gamma: the angle gamma is more than or equal to 90 degrees and more than or equal to 45 degrees;
the H element distribution of the substrate mode inhibiting layer is in a descending trend towards the substrate direction, wherein the descending angle is theta which is more than or equal to 70 degrees and more than or equal to 10 degrees;
the O element distribution of the substrate mode inhibiting layer is in a descending trend towards the substrate direction, and the descending angle is
C element of the substrate mode inhibiting layer is distributed in a descending trend towards the substrate direction, and the descending angle is psi: the angle phi is more than or equal to 80 degrees and is more than or equal to 20 degrees.
Preferably, the angles of variation of the Al element distribution, si doping concentration distribution, C element distribution, H element distribution, and O element distribution of the substrate mode suppression layer have the following relationship:
preferably, the Si doping concentration profile of the substrate has a profile with a function y=sinx/x, sine or cosine, the concentration range being 5E17cm -3 To 1E19cm -3 ；
The H element distribution of the substrate is distributed in a constant function, and the concentration range is 1E16cm -3 To 1E18cm -3 ；
The O element distribution of the substrate is distributed in a constant function, and the concentration range is 1E16cm -3 To 1E17cm -3 ；
The C element distribution of the substrate is distributed in a constant function, and the concentration range is 1E15cm -3 To 5E16cm -3 。
Preferably, the H element distribution of the lower limiting layer is distributed as a constant function, and the concentration range is 1E16cm -3 To 1E18cm -3 ；
The O element distribution of the lower limiting layer is distributed in a constant function, and the concentration range is 1E16cm -3 To 1E17cm -3 ；
The C element distribution of the lower limiting layer is distributed in a constant function, and the concentration range is 1E15cm -3 To 5E16cm -3 。
Preferably, the H element distribution concentration of the lower confinement layer is higher than the H element distribution concentration of the substrate, the C element distribution concentration of the lower confinement layer is higher than the C element distribution concentration of the substrate, and the O element distribution concentration of the lower confinement layer is higher than the O element distribution concentration of the substrate.
Preferably, the lower confinement layer, the lower waveguide layer, the active layer, the upper waveguide layer, the upper confinement layer comprise GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, the lower confinement layer has a thickness of 500nm to 10um and the upper and lower waveguide layers have thicknesses of 20 to 1000 a/m;
the substrate mode inhibiting layer is any one or any combination of AlInGaN, alGaN, alN, alInN, gaN, and the thickness of the substrate mode inhibiting layer is 2nm to 2000nm.
Preferably, the active layer is a periodic structure consisting of a well layer and a barrier layer, the period number is 3-1, the well layer is any one or any combination of InGaN, alInGaN, alGaN, gaN, alInN, the thickness is 50-200 a, the barrier layer is any one or any combination of GaN, alGaN, alInGaN, alN, alInN, and the thickness is 20-500 a; the laser wavelength emitted by the active layer is the ultraviolet and deep ultraviolet wavelength of 200nm to 420 nm.
Preferably, the substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 The thickness of the substrate is 50um to 1000um.
The beneficial effects of the invention are as follows: according to the invention, the substrate mode suppression layer is arranged between the substrate and the lower limiting layer, and the distribution of Si doping concentration, C element, O element, H element and Al element in the substrate mode suppression layer, the substrate and the lower limiting layer is specifically designed, so that the substrate mode leakage is suppressed, the lobe in a far-field distribution image of a laser is eliminated, high kink is prevented, standing waves formed when a light field mode leaks to the substrate are solved, a main laser beam is free of wave, the quality factor of the beam is improved, the quality of a far-field FFP is improved, the absorption loss of an optical waveguide is reduced, the refractive index dispersion is improved, and the internal optical loss is reduced.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute an undue limitation to the application. In the drawings:
FIG. 1 is a schematic diagram of a GaN-based semiconductor ultraviolet laser diode according to an embodiment of the invention;
fig. 2 is a SIMS secondary ion mass spectrum of a GaN-based semiconductor violet-ultraviolet laser diode according to an embodiment of the invention.
Reference numerals:
100. a substrate, 101, a lower confinement layer, 102, a lower waveguide layer, 103, an active layer, 104, an upper waveguide layer, 105, an upper confinement layer, 106, a substrate mode suppression layer.
Detailed Description
In order to make the technical solutions and advantages of the embodiments of the present application more apparent, the following detailed description of exemplary embodiments of the present application is given with reference to the accompanying drawings, and it is apparent that the described embodiments are only some of the embodiments of the present application and not exhaustive of all the embodiments. It should be noted that, in the case of no conflict, the embodiments and features in the embodiments may be combined with each other.
As shown in fig. 1 and 2, the present embodiment proposes a GaN-based semiconductor ultraviolet laser diode including a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105, which are disposed in this order from bottom to top. Wherein a substrate mode suppression layer 106 is provided between the substrate 100 and the lower confinement layer 101.
Specifically, in the present embodiment, the GaN-based semiconductor ultraviolet laser diode is provided with a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105 in this order from bottom to top. A substrate mode suppression layer 106 is provided between the substrate 100 and the lower confinement layer 101. The substrate mode suppression layer 106 is any one or any combination of AlInGaN, alGaN, alN, alInN, gaN and has a thickness of 2nm to 2000nm. There is some specific element distribution in the substrate 100, the lower confinement layer 101 and the substrate mode suppression layer 106. The substrate mode suppression layer 106 has a Si doping concentration distribution, a C element distribution, an O element distribution, an H element distribution, and an Al element distribution. The substrate 100 has a Si doping concentration profile, a C element profile, an O element profile, and an H element profile. The lower confinement layer 101 has a C element distribution, an O element distribution, and an H element distribution.
More specifically, in the substrate-mode suppression layer 106, the specific distribution forms of the Si doping concentration distribution, the C element distribution, the O element distribution, the H element distribution, and the Al element distribution are:
si doping concentration profile:
the Si doping concentration profile of the substrate mode suppression layer 106 has a function y=cosx/e x Or y=e x sinx curve distribution.
C element distribution:
the C-element distribution of the substrate mode suppression layer 106 has a function y= (a) x -1)/(a x +1)(0<a<1) A curve distribution.
Distribution of O element:
the O-element distribution of the substrate mode suppression layer 106 has a function y= (a) x -1)/(a x +1)(0<a<1) A curve distribution.
Distribution of H element:
the H element distribution of the substrate mode suppression layer 106 has a function y= (a) x -1)/(a x +1)(0<a<1) A curve distribution.
Distribution of Al element:
the Al element distribution of the substrate mode suppression layer 106 has a function y=x/lnx or y=e x Fourth quadrant curve distribution of/lnx.
On the basis of the characteristics of the Si doping concentration distribution, the C element distribution, the O element distribution, the H element distribution, and the Al element distribution in the above-described substrate mode suppression layer 106, in the present embodiment, in the substrate mode suppression layer 106, there is a specific trend of the Si doping concentration distribution, the C element distribution, the O element distribution, the H element distribution, and the Al element distribution:
distribution of Al element:
the Al element distribution peak position of the substrate mode suppression layer 106 is in a downward trend toward the substrate 100, and the downward angle is α: the angle alpha is more than or equal to 90 degrees and more than or equal to 45 degrees.
Si doping concentration profile:
the peak position of the Si doping concentration profile of the substrate mode confinement layer 106 is in a downward trend toward the substrate 100, and the downward angle is β: beta is more than or equal to 90 degrees and more than or equal to 40 degrees;
the peak position of the Si doping concentration profile of the substrate mode suppression layer 106 is in a downward trend toward the lower confinement layer 101, and the downward angle is γ: the angle gamma is more than or equal to 90 degrees and more than or equal to 45 degrees.
Distribution of H element:
the H element distribution of the substrate mode suppression layer 106 is in a descending trend towards the substrate 100, and the descending angle is theta, namely that the theta is more than or equal to 70 degrees and more than or equal to 10 degrees.
Distribution of O element:
the O element distribution of the substrate mode suppression layer 106 is in a decreasing trend toward the substrate 100, the decreasing angle is
C element distribution:
the C element distribution of the substrate mode suppression layer 106 is in a downward trend toward the substrate 100, and the downward angle is ψ: the angle phi is more than or equal to 80 degrees and is more than or equal to 20 degrees.
The angles of change of the Al element distribution, si doping concentration distribution, C element distribution, H element distribution, and O element distribution of the substrate mode suppression layer 106 have the following relationship:
in the substrate 100, the specific distribution forms of the Si doping concentration distribution, the C element distribution, the O element distribution, and the H element distribution are:
si doping concentration profile:
the Si doping concentration profile of the substrate 100 has a profile with a function y=sinx/x, sine or cosine function, with a concentration range of 5E17cm -3 To 1E19cm -3 。
C element distribution:
the C element distribution of the substrate 100 is distributed as a constant function, and the concentration range is 1E15cm -3 To 5E16cm -3 。
Distribution of H element:
the H element distribution of the substrate 100 is distributed as a constant function, and the concentration range is 1E16cm -3 To 1E18cm -3 。
Distribution of O element:
the O element distribution of the substrate 100 is distributed as a constant function, and the concentration range is 1E16cm -3 To 1E17cm -3 。
In the lower confinement layer 101, the C element distribution, the O element distribution, and the H element distribution are specifically distributed in the form of:
distribution of H element:
the H element distribution of the lower confinement layer 101 is distributed as a constant function, and the concentration range is 1E16cm -3 To 1E18cm -3 。
Distribution of O element:
the O element distribution of the lower confinement layer 101 is distributed as a constant function, and the concentration range is 1E16cm -3 To 1E17cm -3 。
C element distribution:
the C element distribution of the lower confinement layer 101 is distributed as a constant function, and the concentration range is 1E15cm -3 To 5E16cm -3 。
Wherein, the H element distribution concentration of the lower confinement layer 101 is higher than the H element distribution concentration of the substrate 100, the C element distribution concentration of the lower confinement layer 101 is higher than the C element distribution concentration of the substrate 100, and the O element distribution concentration of the lower confinement layer 101 is higher than the O element distribution concentration of the substrate 100.
In the embodiment, the substrate mode suppression layer is arranged between the substrate and the lower limiting layer, and the distribution of Si doping concentration, C element, O element, H element and Al element in the substrate mode suppression layer, the substrate and the lower limiting layer is specifically designed, so that substrate mode leakage is suppressed, lobes in a far-field distribution image of a laser are eliminated, high kinks are prevented, standing waves formed when light field modes leak to the substrate are solved, a main laser beam is free of waves, the quality factor of the beam is improved, the quality of far-field FFP is improved, the absorption loss of an optical waveguide is reduced, refractive index dispersion is improved, and internal optical loss is reduced.
Further, the lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, and the upper confinement layer 105 include GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP. The lower confinement layer 101 has a thickness of 500nm to 10um. The thickness of the upper waveguide layer 104 and the lower waveguide layer 102 is 20 to 1000 a.
The active layer 103 is a periodic structure consisting of a well layer and a barrier layer, the period number is 3-1, the well layer is any one or any combination of InGaN, alInGaN, alGaN, gaN, alInN, the thickness is 50-200A, the barrier layer is any one or any combination of GaN, alGaN, alInGaN, alN, alInN, and the thickness is 20-500A. The laser wavelength emitted by the active layer 103 is ultraviolet and deep ultraviolet wavelengths of 200nm to 420 nm.
The substrate 100 includes sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates. The substrate thickness is 50um to 1000um.
The following table shows the comparison of the performance parameters of the GaN-based semiconductor ultraviolet laser diode and the conventional semiconductor laser according to the present embodiment:
it can be seen that the beam quality factor of the GaN-based semiconductor ultraviolet laser diode proposed in this embodiment is improved from 3.7 to 1.89 by about 96%; the limiting factor is improved from 1.4% to 2.67%, and 91%; the internal optical loss is improved from 17.2% to 8.1%, and is improved by about 53%, so that the working performance of the GaN-based semiconductor ultraviolet laser diode is effectively improved.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present application without departing from the spirit or scope of the application. Thus, if such modifications and variations of the present application fall within the scope of the claims and the equivalents thereof, the present application is intended to cover such modifications and variations.
Claims (10)
1. The GaN-based semiconductor ultraviolet laser diode comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top, and is characterized in that a substrate mode inhibiting layer is arranged between the substrate and the lower limiting layer, the substrate mode inhibiting layer is provided with Si doping concentration distribution, C element distribution, O element distribution, H element distribution and Al element distribution, the substrate is provided with Si doping concentration distribution, C element distribution, O element distribution and H element distribution, and the lower limiting layer is provided with C element distribution, O element distribution and H element distribution.
2. The GaN based semiconductor violet ultraviolet laser diode of claim 1 wherein the Si doping concentration profile of the substrate mode suppression layer has a function y = cosx/e x Or y=e x A sinx curve distribution;
the C element distribution, O element distribution and H element distribution of the substrate mode suppression layer have a function y= (a) x -1)/(a x +1)(0<a<1) Curve distribution;
the Al element distribution of the substrate mode suppression layer has a function y=x/lnx or y=e x Fourth quadrant curve distribution of/lnx.
3. The GaN-based semiconductor ultraviolet laser diode according to claim 1 or 2, wherein the Al element distribution peak position of the substrate mode suppression layer is in a decreasing trend toward the substrate direction, and the decreasing angle is α: alpha is more than or equal to 90 degrees and more than or equal to 45 degrees;
the Si doping concentration distribution peak position of the substrate mode suppression layer is in a descending trend towards the substrate direction, and the descending angle is beta: beta is more than or equal to 90 degrees and more than or equal to 40 degrees;
the Si doping concentration distribution peak position of the substrate mode suppression layer is downward in the direction of the limiting layer, and the downward angle is gamma: the angle gamma is more than or equal to 90 degrees and more than or equal to 45 degrees;
the H element distribution of the substrate mode inhibiting layer is in a descending trend towards the substrate direction, wherein the descending angle is theta which is more than or equal to 70 degrees and more than or equal to 10 degrees;
the O element distribution of the substrate mode inhibiting layer is in a descending trend towards the substrate direction, and the descending angle is
C element of the substrate mode inhibiting layer is distributed in a descending trend towards the substrate direction, and the descending angle is psi: the angle phi is more than or equal to 80 degrees and is more than or equal to 20 degrees.
4. The GaN-based semiconductor ultraviolet violet laser diode of claim 3, wherein the angles of variation of Al element distribution, si doping concentration distribution, C element distribution, H element distribution and O element distribution of the substrate mode suppression layer have the following relationship:
5. the GaN based semiconductor violet ultraviolet laser diode of claim 1 wherein the Si doping concentration profile of the substrate has a profile with a function y = sinx/x, sine or cosine, a concentration range of 5E17cm -3 To 1E19cm -3 ；
The H element distribution of the substrate is distributed in a constant function, and the concentration range is 1E16cm -3 To 1E18cm -3 ；
The O element distribution of the substrate is distributed in a constant function, and the concentration range is 1E16cm -3 To 1E17cm -3 ；
The C element distribution of the substrate is distributed in a constant function, and the concentration range is 1E15cm -3 To 5E16cm -3 。
6. The GaN-based semiconductor ultraviolet laser diode according to claim 1, wherein the lower confinement layer has a H element distribution with a constant function distribution and a concentration range of 1E16cm -3 To 1E18cm -3 ；
The O element distribution of the lower limiting layer is distributed in a constant function, and the concentration range is 1E16cm -3 To 1E17cm -3 ；
Element C of the lower confinement layerThe distribution is a constant function distribution, the concentration range is 1E15cm -3 To 5E16cm -3 。
7. The GaN-based semiconductor ultraviolet laser diode according to claim 1 or 6, wherein the lower confinement layer has an H element distribution concentration higher than that of the substrate, a C element distribution concentration higher than that of the substrate, and an O element distribution concentration higher than that of the substrate.
8. The GaN based semiconductor ultraviolet laser diode of claim 1, wherein the lower confinement layer, lower waveguide layer, active layer, upper waveguide layer, upper confinement layer comprise GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, the lower confinement layer has a thickness of 500nm to 10um and the upper and lower waveguide layers have thicknesses of 20 to 1000 a/m;
the substrate mode inhibiting layer is any one or any combination of AlInGaN, alGaN, alN, alInN, gaN, and the thickness of the substrate mode inhibiting layer is 2nm to 2000nm.
9. The GaN-based semiconductor ultraviolet laser diode according to claim 1, wherein the active layer is a periodic structure composed of a well layer and a barrier layer, the period number is 3-1, the well layer is any one or any combination of InGaN, alInGaN, alGaN, gaN, alInN, the thickness is 50-200 a/m, the barrier layer is any one or any combination of GaN, alGaN, alInGaN, alN, alInN, and the thickness is 20-500 a/m; the laser wavelength emitted by the active layer is the ultraviolet and deep ultraviolet wavelength of 200nm to 420 nm.
10. The GaN based semiconductor violet ultraviolet laser diode of claim 1, wherein the substrate comprises sapphire, siliconGe, siC, alN, gaN, gaAs, inP sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 The thickness of the substrate is 50um to 1000um.
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2024
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