CN118099940A - Semiconductor ultraviolet laser - Google Patents
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Abstract
The invention provides a semiconductor ultraviolet laser, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top, wherein the peak position of an Al element and the peak position of an Al/Si element ratio of the lower limiting layer are in descending trend towards the direction of the substrate and the direction of the active layer. According to the invention, through designing the change trend of the ratio of Al element and Al/Si element in the lower limiting layer in the semiconductor laser towards the substrate direction and the active layer direction, the refractive index difference of the lower limiting layer is increased, the light field dissipation is reduced, the internal optical loss is reduced, the light field mode is inhibited from leaking to the substrate, and the FFP quality of a far-field image is improved.
Description
Technical Field
The application relates to the field of semiconductor photoelectric devices, in particular to a semiconductor ultraviolet laser.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The laser has various types and various classification modes, and mainly comprises solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state semiconductor ultraviolet laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like.
The laser is largely different from the nitride semiconductor light emitting diode:
1) The laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level;
2) The current density of the laser reaches KA/cm 2, which is higher than that of the nitride light-emitting diode by more than 2 orders of magnitude, so that stronger electron leakage, more serious Auger recombination, stronger polarization effect and more serious electron-hole mismatch are caused, and more serious efficiency attenuation Droop effect is caused;
3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated;
4) The principle is different: the light emitting diode generates radiation composite luminescence by transferring electron holes to an active layer or a p-n junction under the action of external voltage, and the laser can perform lasing only when the lasing condition is satisfied, the inversion distribution of carriers in an active area is necessarily satisfied, the stimulated radiation oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss when the threshold condition is satisfied, and finally laser is output.
The nitride semiconductor ultraviolet laser has the following problems: the thickness of the lower limiting layer is increased, so that the refractive index of the limiting layer can be reduced, but the thickness of the lower limiting layer is increased, so that the component regulation range is limited, and the problems of cracking, bending, quality reduction and the like are easily caused; meanwhile, the optical field is dissipated, the optical field mode leaks to the substrate to form standing waves, so that the substrate mode suppression efficiency is low, and the FFP quality of the far-field image is poor.
Disclosure of Invention
In order to solve one of the technical problems, the invention provides a semiconductor ultraviolet laser.
The embodiment of the invention provides a semiconductor ultraviolet laser, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top, wherein the peak position of an Al element and the peak position of an Al/Si element ratio of the lower limiting layer are in a descending trend towards the direction of the substrate and the direction of the active layer.
Preferably, the peak position of the Al element of the lower confinement layer is lowered by an angle α toward the substrate;
the descending angle of the peak position of the Al element of the lower limiting layer towards the direction of the active layer is beta;
The descending angle of the peak position of the Al/Si element proportion of the lower limiting layer towards the substrate direction is gamma;
The descending angle of the peak position of the Al/Si element proportion of the lower limiting layer to the direction of the active layer is theta;
Wherein: gamma is more than or equal to 20 degrees and less than or equal to theta is more than or equal to 20 degrees and less than or equal to alpha is more than or equal to beta is more than or equal to 90 degrees.
Preferably, the peak position of the Al/C element ratio, the peak position of the Al/O element ratio, and the peak position of the Al/H element ratio of the lower confinement layer have a decreasing trend toward the substrate direction and the active layer direction.
Preferably, the decreasing angle of the peak position of the Al/C element proportion of the lower limiting layer to the substrate direction is delta;
The descending angle of the peak position of the Al/C element proportion of the lower limiting layer to the direction of the active layer is sigma;
The descending angle of the peak position of the Al/O element proportion of the lower limiting layer towards the substrate direction is
The descending angle of the peak position of the Al/O element proportion of the lower limiting layer to the direction of the active layer is phi;
The descending angle of the peak position of the Al/H element proportion of the lower limiting layer towards the substrate direction is mu;
The descending angle of the peak position of the Al/H element proportion of the lower limiting layer to the direction of the active layer is rho;
Wherein:
Preferably, the decreasing angles of the peak positions of the Al element, the Al/Si element ratio, the Al/C element ratio, the Al/O element ratio, and the Al/H element ratio of the lower confinement layer toward the substrate direction and the active layer direction have the following relationship:
preferably, the Al/C element ratio of the lower confinement layer has a curve distribution of the function y= secx.
Preferably, the lower confinement layer further has refractive index profile, lattice constant profile, and forbidden bandwidth profile characteristics;
the refractive index coefficient of the lower limiting layer has a first and second quadrant curve distribution of a function y=x/sinx;
the lattice constant of the lower limiting layer has a first and second quadrant curve distribution of a function y=x/sinx;
The forbidden bandwidth of the lower limiting layer has a curve distribution of a function y= secx.
Preferably, the lower confinement layer is any one or any combination of GaN、InGaN、InN、AlInN、AlN、AlInGaN、AlGaN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN a, and the thickness of the lower confinement layer is 10 to 90000 a.
Preferably, the active layer is a periodic structure formed by a well layer and a barrier layer, and the period is m is more than or equal to 1 and less than or equal to 3;
The well layer of the active layer is any one or any combination of GaN、InGaN、InN、AlInN、AlN、AlInGaN、AlGaN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN and the thickness is p is more than or equal to 5 and less than or equal to 100;
The barrier layer of the active layer is any one or any combination of GaN、InGaN、InN、AlInN、AlN、AlInGaN、AlGaN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN, and the thickness q is more than or equal to 10 and less than or equal to 200.
Preferably, the lower waveguide layer and the upper waveguide layer are any one or any combination of GaN、InGaN、InN、AlInN、AlN、AlInGaN、AlGaN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN and have a thickness of 10 to 20000 a;
the upper limiting layer comprises any one or any combination of GaN、AlGaN、InGaN、AlInGaN、AlN、InN、AlInN、SiC、Ga2O3、BN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP and has a thickness of 10 to 80000 angstroms;
The substrate comprises any one of a sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, a sapphire/SiN x, diamond, magnesia-alumina spinel MgAl 2O4、MgO、ZnO、ZrB2、LiAlO2 and LiGaO 2 composite substrate.
The beneficial effects of the invention are as follows: according to the invention, through designing the change trend of the ratio of Al element and Al/Si element in the lower limiting layer in the semiconductor laser towards the substrate direction and the active layer direction, the refractive index difference of the lower limiting layer is increased, the light field dissipation is reduced, the internal optical loss is reduced, the light field mode is inhibited from leaking to the substrate, and the FFP quality of a far-field image is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute a limitation on the application. In the drawings:
FIG. 1 is a schematic diagram of a semiconductor ultraviolet laser according to an embodiment of the present invention;
FIG. 2 is a SIMS secondary ion mass spectrum of a semiconductor ultraviolet laser according to an embodiment of the present invention;
fig. 3 is a partial amplified SIMS secondary ion mass spectrum of a semiconductor violet ultraviolet laser according to an embodiment of the present invention.
Reference numerals:
100. substrate, 101, lower confinement layer, 102, lower waveguide layer, 103, active layer, 104, upper waveguide layer, 105, upper confinement layer.
Detailed Description
In order to make the technical solutions and advantages of the embodiments of the present application more apparent, the following detailed description of exemplary embodiments of the present application is provided in conjunction with the accompanying drawings, and it is apparent that the described embodiments are only some embodiments of the present application and not exhaustive of all embodiments. It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other.
As shown in fig. 1 to 3, the present embodiment proposes a semiconductor ultraviolet laser including a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105 disposed in this order from bottom to top, wherein the lower confinement layer 101 has a distribution of Al element and Al/Si element ratio therein.
Specifically, in this embodiment, the semiconductor ultraviolet laser is provided with a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105 in this order from bottom to top. The lower confinement layer 101 has a distribution of Al element and Al/Si element ratio, and the Al element and Al/Si element ratio in the lower confinement layer 101 show a certain trend of variation in both the substrate 100 direction and the active layer 103 direction, specifically expressed as:
Al element:
the peak position of Al element of the lower confinement layer 101 tends to decrease toward the substrate 100;
the peak position of the Al element of the lower confinement layer 101 tends to decrease toward the active layer 103;
Al/Si element ratio:
The peak position of the Al/Si element ratio of the lower confinement layer 101 tends to decrease toward the substrate 100;
The peak position of the Al/Si element ratio of the lower confinement layer 101 tends to decrease toward the active layer 103;
Wherein, the lowering angle of the peak position of the Al element of the lower confinement layer 101 toward the substrate 100 is α, the lowering angle of the peak position of the Al element of the lower confinement layer 101 toward the active layer 103 is β, the lowering angle of the peak position of the Al/Si element ratio of the lower confinement layer 101 toward the substrate 100 is γ, the lowering angle of the peak position of the Al/Si element ratio of the lower confinement layer 101 toward the active layer 103 is θ, and the relationship between the lowering angles is: gamma is more than or equal to 20 degrees and less than or equal to theta is more than or equal to 20 degrees and less than or equal to alpha is more than or equal to beta is more than or equal to 90 degrees.
According to the embodiment, through designing the change trend of the ratio of Al element and Al/Si element in the lower limiting layer 101 to the direction of the substrate 100 and the direction of the active layer 103 in the semiconductor laser, the refractive index difference of the lower limiting layer 101 is increased, the light field dissipation is reduced, the internal optical loss is reduced, the light field mode is inhibited from leaking to the substrate 100, and the FFP quality of a far-field image is improved.
Further, the lower confinement layer 101 of the present embodiment has a distribution of Al/C element ratio, al/O element ratio, and Al/H element ratio in addition to a specific distribution of Al element and Al/Si element ratio and a trend of variation, wherein the Al/C element ratio of the lower confinement layer 101 has a curve distribution of function y= secx. The Al/C element ratio, al/O element ratio, and Al/H element ratio in the lower confinement layer 101 also have a specific tendency to change in the direction toward the substrate 100 and the active layer 103, specifically expressed as:
Al/C element ratio:
The peak position of the Al/C element ratio of the lower confinement layer 101 tends to decrease toward the substrate 100;
the peak position of the Al/C element ratio of the lower confinement layer 101 tends to decrease toward the active layer 103;
Al/O element ratio:
the peak position of the Al/O element ratio of the lower confinement layer 101 tends to decrease toward the substrate 100;
the peak position of the Al/O element ratio of the lower confinement layer 101 tends to decrease toward the active layer 103;
Al/H element ratio:
the peak position of the Al/H element ratio of the lower confinement layer 101 tends to decrease toward the substrate 100;
the peak position of the Al/H element ratio of the lower confinement layer 101 tends to decrease toward the active layer 103;
Wherein the lowering angle of the peak position of the Al/C element ratio of the lower confinement layer 101 toward the substrate 100 is delta, the lowering angle of the peak position of the Al/C element ratio of the lower confinement layer 101 toward the active layer 103 is sigma, and the lowering angle of the peak position of the Al/O element ratio of the lower confinement layer 101 toward the substrate 100 is delta The angle of decrease in the peak position of the Al/O element ratio of the lower confinement layer 101 toward the active layer 103 is ψ, the angle of decrease in the peak position of the Al/H element ratio of the lower confinement layer 101 toward the substrate 100 is μ, the angle of decrease in the peak position of the Al/H element ratio of the lower confinement layer 101 toward the active layer 103 is ρ, and the relationship between the above-mentioned angles of decrease is: /(I)
More specifically, the lowering angles of the peak positions of the Al element, the Al/Si element ratio, the Al/C element ratio, the Al/O element ratio, and the Al/H element ratio of the lower confinement layer 101 toward the substrate 100 and the active layer 103 have the following relationship:
In the embodiment, by designing the variation trend of the Al/C element proportion, the Al/O element proportion and the Al/H element proportion in the lower limiting layer 101 in the semiconductor laser towards the direction of the substrate 100 and the direction of the active layer 103, the refractive index difference of the lower limiting layer 101 is further increased, the light field dissipation is reduced, the internal optical loss is reduced, the light field mode leakage to the substrate 100 is inhibited, and the FFP quality of a far-field image is improved.
Further, the lower confinement layer 101 of the present embodiment has refractive index distribution, lattice constant distribution, and forbidden bandwidth distribution characteristics in addition to the above-described element distribution characteristics.
Refractive index, which is an important physical quantity of light propagating in a medium, describes the change in speed of light propagating in different media. In semiconductor materials, refractive index is a critical parameter that is of great importance for understanding and designing optoelectronic devices. The refractive index is the ratio of the propagation speed of a ray of light in a medium to the propagation speed in vacuum. When the light propagation medium changes, such as a vacuum, into the semiconductor material, the speed of the light changes, resulting in a change in the direction of propagation of the light. And the refractive index is a physical quantity describing such a change in speed. The refractive index of a semiconductor material is closely related to factors such as constituent elements, lattice structure, and band structure. In general, the refractive index of a semiconductor material varies with the wavelength of light. This is because the different wavelengths of light interact differently with matter in the semiconductor material, resulting in a difference in refractive index.
The lattice constant, the lattice constant (or lattice constant) refers to the side length of the unit cell, i.e., the side length of each parallelepiped element, which is an important fundamental parameter of the crystal structure. It has a direct relationship with the binding energy between atoms. The change in lattice constant reflects the change in the composition, stress state, and the like inside the crystal.
The forbidden band width refers to a band gap width (the unit is electron volt (ev)), and the energy of electrons in the solid is not continuously valued, but is a discontinuous energy band, free electrons or holes exist in the solid, the energy band where the free electrons exist is called conduction band (energy conduction), and the energy band where the free holes exist is called valence band (energy conduction). To be a free electron or hole, the bound electron must acquire enough energy to transition from the valence band to the conduction band, the minimum of which is the forbidden bandwidth. The effect of forbidden band width on the performance of semiconductor devices is self-evident, which directly determines the withstand voltage and the maximum operating temperature of the device; for bipolar transistors, when the emission region has a narrow bandgap due to high doping, the current gain will be greatly reduced.
Based on the refractive index, lattice constant, and forbidden bandwidth characteristics described above, the present embodiment designs specific refractive index distribution, lattice constant distribution, and forbidden bandwidth distribution characteristics in the lower confinement layer 101, specifically expressed as:
Refractive index coefficient distribution:
the refractive index coefficient of the lower confinement layer 101 has a first, two-quadrant curve distribution of the function y=x/sinx;
lattice constant distribution:
the lattice constant of the lower confinement layer 101 has a first, second quadrant curve distribution of the function y=x/sinx;
forbidden band width distribution:
the forbidden bandwidth of the lower confinement layer 101 has a curve profile with a function y= secx.
In this embodiment, by designing the refractive index distribution, lattice constant distribution and forbidden bandwidth distribution characteristics of the lower confinement layer 101 in the semiconductor laser, the refractive index difference of the lower confinement layer 101 is further increased, the optical field dissipation is reduced, the internal optical loss is reduced, the optical field mode is inhibited from leaking to the substrate 100, and the quality of the far-field image FFP is improved.
Further, in this embodiment, the lower limiting layer 101 is any one or any combination of GaN、InGaN、InN、AlInN、AlN、AlInGaN、AlGaN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN. The thickness of the lower confinement layer 101 is 10 to 90000 a.
The active layer 103 is a periodic structure formed by a well layer and a barrier layer, and the period is m is more than or equal to 1 and less than or equal to 3. The well layer of the active layer 103 is any one or any combination of GaN、InGaN、InN、AlInN、AlN、AlInGaN、AlGaN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN and the thickness p is more than or equal to 5 and less than or equal to 100. The barrier layer of the active layer 103 is any one or any combination of GaN、InGaN、InN、AlInN、AlN、AlInGaN、AlGaN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN, and the thickness q is 10 Emeter or more and q is not more than 200 Emeter or less.
The lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of GaN、InGaN、InN、AlInN、AlN、AlInGaN、AlGaN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN and have a thickness of 10 to 20000 a.
The upper confinement layer 105 comprises any one or any combination of GaN、AlGaN、InGaN、AlInGaN、AlN、InN、AlInN、SiC、Ga2O3、BN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP a thickness of 10 to 80000 a;
The substrate 100 includes any one of a sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, a sapphire/SiN x, diamond, magnesium aluminate spinel MgAl 2O4、MgO、ZnO、ZrB2、LiAlO2, and a LiGaO 2 composite substrate.
The following table shows the parameter comparison between the semiconductor ultraviolet laser proposed in this embodiment and the conventional semiconductor laser:
It can be seen that, compared with the traditional semiconductor laser, the beam quality factor of the semiconductor ultraviolet laser of the embodiment is improved from 3.7 to 1.47, and is improved by 152%; the internal optical loss was reduced from 17.2cm -1 to 7.6cm -1 by 56%. Obviously, the performance of the semiconductor ultraviolet laser of the embodiment is better than that of the traditional semiconductor laser.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present application without departing from the spirit or scope of the application. Thus, it is intended that the present application also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (10)
1. The semiconductor ultraviolet laser comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top, and is characterized in that the peak position of an Al element and the peak position of an Al/Si element ratio of the lower limiting layer are in descending trend towards the direction of the substrate and the direction of the active layer.
2. The semiconductor ultraviolet laser according to claim 1, wherein the peak position of the Al element of the lower confinement layer is lowered by an angle α toward the substrate;
the descending angle of the peak position of the Al element of the lower limiting layer towards the direction of the active layer is beta;
The descending angle of the peak position of the Al/Si element proportion of the lower limiting layer towards the substrate direction is gamma;
The descending angle of the peak position of the Al/Si element proportion of the lower limiting layer to the direction of the active layer is theta;
Wherein: gamma is more than or equal to 20 degrees and less than or equal to theta is more than or equal to 20 degrees and less than or equal to alpha is more than or equal to beta is more than or equal to 90 degrees.
3. The semiconductor ultraviolet violet laser of claim 2, wherein peak positions of the Al/C element ratio, the Al/O element ratio, and the Al/H element ratio of the lower confinement layer have a decreasing trend toward the substrate and the active layer.
4. The semiconductor ultraviolet laser according to claim 3, wherein the peak position of the Al/C element ratio of the lower confinement layer is lowered by an angle δ toward the substrate;
The descending angle of the peak position of the Al/C element proportion of the lower limiting layer to the direction of the active layer is sigma;
The descending angle of the peak position of the Al/O element proportion of the lower limiting layer towards the substrate direction is
The descending angle of the peak position of the Al/O element proportion of the lower limiting layer to the direction of the active layer is phi;
The descending angle of the peak position of the Al/H element proportion of the lower limiting layer towards the substrate direction is mu;
The descending angle of the peak position of the Al/H element proportion of the lower limiting layer to the direction of the active layer is rho;
Wherein:
5. the semiconductor ultraviolet violet laser of claim 4, wherein a decreasing angle of a peak position of the Al element, the Al/Si element ratio, the Al/C element ratio, the Al/O element ratio, the Al/H element ratio of the lower confinement layer toward the substrate direction and the active layer direction has a relationship of:
6. the semiconductor violet ultraviolet laser of claim 4 wherein the Al/C element ratio of the lower confinement layer has a curve distribution of function y = secx.
7. The semiconductor violet ultraviolet laser of claim 1, wherein the lower confinement layer further has refractive index profile, lattice constant profile, and forbidden bandwidth profile characteristics;
the refractive index coefficient of the lower limiting layer has a first and second quadrant curve distribution of a function y=x/sinx;
the lattice constant of the lower limiting layer has a first and second quadrant curve distribution of a function y=x/sinx;
The forbidden bandwidth of the lower limiting layer has a curve distribution of a function y= secx.
8. The semiconductor violet ultraviolet laser of claim 1, wherein the lower confinement layer is any one or any combination of GaN、InGaN、InN、AlInN、AlN、AlInGaN、AlGaN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN, and the thickness of the lower confinement layer is 10 to 90000 a.
9. The semiconductor ultraviolet laser according to claim 1, wherein the active layer is a periodic structure consisting of a well layer and a barrier layer, and the period is m is 1-3;
The well layer of the active layer is any one or any combination of GaN、InGaN、InN、AlInN、AlN、AlInGaN、AlGaN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN and the thickness is p is more than or equal to 5 and less than or equal to 100;
The barrier layer of the active layer is any one or any combination of GaN、InGaN、InN、AlInN、AlN、AlInGaN、AlGaN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN, and the thickness q is more than or equal to 10 and less than or equal to 200.
10. The semiconductor violet ultraviolet laser of claim 1, wherein the lower waveguide layer and the upper waveguide layer are any one or any combination of GaN、InGaN、InN、AlInN、AlN、AlInGaN、AlGaN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN a thickness of 10 to 20000 a;
the upper limiting layer comprises any one or any combination of GaN、AlGaN、InGaN、AlInGaN、AlN、InN、AlInN、SiC、Ga2O3、BN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP and has a thickness of 10 to 80000 angstroms;
The substrate comprises any one of a sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, a sapphire/SiN x, diamond, magnesia-alumina spinel MgAl 2O4、MgO、ZnO、ZrB2、LiAlO2 and LiGaO 2 composite substrate.
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