CN118099939A - Semiconductor laser chip - Google Patents
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- CN118099939A CN118099939A CN202410217149.9A CN202410217149A CN118099939A CN 118099939 A CN118099939 A CN 118099939A CN 202410217149 A CN202410217149 A CN 202410217149A CN 118099939 A CN118099939 A CN 118099939A
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- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 15
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 15
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- Semiconductor Lasers (AREA)
Abstract
The invention provides a semiconductor laser chip, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top, and is characterized in that a hole injection layer is arranged between the active layer and the upper waveguide layer, and the hole injection layer has the characteristics of effective mass of electrons, thermal expansion coefficient, elastic coefficient, refractive index coefficient and lattice constant. The invention can regulate and control the polarization electric field of the active layer, reduce the hole injection potential barrier, regulate and control the air-space wave function distribution, reduce the hole overflow of the active layer, improve the quasi-fermi level pinning of the hole, ensure that the injected carrier is completely converted into laser photon output, improve the corresponding symmetry break away from the equilibrium state, and solve the problems of discontinuous or abrupt conductivity jump, junction voltage jump and series resistance sinking at the threshold value.
Description
Technical Field
The application relates to the field of semiconductor photoelectric devices, in particular to a semiconductor laser chip.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The laser has various types and various classification modes, and mainly comprises solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state gallium nitride-based semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like.
The laser is largely different from the nitride semiconductor light emitting diode:
1) The laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level;
2) The current density of the laser reaches KA/cm 2, which is higher than that of the nitride light-emitting diode by more than 2 orders of magnitude, so that stronger electron leakage, more serious Auger recombination, stronger polarization effect and more serious electron-hole mismatch are caused, and more serious efficiency attenuation Droop effect is caused;
3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated;
4) The principle is different: the light emitting diode generates radiation composite luminescence by transferring electron holes to an active layer or a p-n junction under the action of external voltage, and the laser can perform lasing only when the lasing condition is satisfied, the inversion distribution of carriers in an active area is necessarily satisfied, the stimulated radiation oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss when the threshold condition is satisfied, and finally laser is output.
The nitride semiconductor laser chip has the following problems: the quantum well polarized electric field improves the problems of hole injection barrier, hole overflow active layer and the like, and the holes are injected unevenly and with low efficiency, so that the electrons and holes in the quantum well are seriously and asymmetrically not matched, the electrons are leaked and carriers are delocalized, the holes are more difficult to transport in the quantum well, the carriers are injected unevenly, and the gains are uneven; according to the laser theory, after the laser emits stable laser light and is saturated, quasi-fermi energy levels of holes and electrons are pinned, injected carriers are completely converted into photon output, optical gain reaches saturation, junction voltage also reaches saturation, and carrier concentration in a cavity does not change along with current. The active layer is far away from symmetry break corresponding to equilibrium phase transition, so that discontinuous or abrupt change phenomenon of the laser occurs at the threshold, such as problems of conductivity jump, capacitance dip, junction voltage jump, series resistance dip, ideal factor jump and the like.
Disclosure of Invention
In order to solve one of the above technical problems, the present invention provides a semiconductor laser chip.
The embodiment of the invention provides a semiconductor laser chip, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top, and is characterized in that a hole injection layer is arranged between the active layer and the upper waveguide layer, and the hole injection layer has the characteristics of effective mass of electrons, thermal expansion coefficient, elastic coefficient, refractive index coefficient and lattice constant.
Preferably, the electron effective mass of the hole injection layer has a profile of the function y=ax 2 +bx+c (a < 0);
the thermal expansion coefficient of the hole injection layer has a curve distribution of a function y=dx 2 +ex+f (d < 0);
The elastic coefficient of the hole injection layer has a curve distribution of a function y=gx 2 +hx+i (g < 0);
The refractive index of the hole injection layer has a profile of a function y=kx 2 +lx+m (k > 0);
The lattice constant of the hole injection layer has a profile of the function y=rx 2 +sx+t (r > 0).
Preferably, the electron effective mass distribution, the thermal expansion coefficient distribution, the elastic coefficient distribution, the refractive index distribution, and the function coefficient of the lattice constant distribution of the hole injection layer have the following relationship: d is more than or equal to a and less than or equal to 0 and less than or equal to r and less than or equal to k.
Preferably, the hole injection layer further has distribution characteristics of an Al/Si element ratio, an H/Si element ratio, an O/Si element ratio, an Mg/Si element ratio and a C/Si element ratio, peak positions of the Al/Si element ratio, the O/Si element ratio, the Mg/Si element ratio and the C/Si element ratio in the hole injection layer all have a downward trend toward the lower limiting layer, and peak positions of the H/Si element ratio in the hole injection layer have a downward trend toward the upper limiting layer.
Preferably, the descending angle of the peak position of the Al/Si element proportion of the hole injection layer in the direction of the downward limiting layer is alpha;
The descending angle of the peak position of the H/Si element proportion of the hole injection layer in the upward limiting layer direction is beta;
the descending angle of the peak position of the O/Si element proportion of the hole injection layer in the direction of the downward limiting layer is gamma;
The descending angle of the peak position of the Mg/Si element proportion of the hole injection layer in the direction of the downward limiting layer is theta;
The descending angle of the peak position of the C/Si element proportion of the hole injection layer in the direction of the downward limiting layer is delta;
Wherein: gamma is less than or equal to delta is less than or equal to beta is less than or equal to theta and less than or equal to alpha.
Preferably, the hole injection layer is any one or any combination of GaN、InGaN、InN、AlInN、AlN、AlInGaN、AlGaN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN a/m to 5000 a/m thick.
Preferably, the active layer is a periodic structure consisting of a well layer and a barrier layer, and the period number is 3-1;
The well layer of the active layer is any one or any combination of GaN、InGaN、InN、AlInN、AlN、AlInGaN、AlGaN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN, and the thickness is 10 to 200 Emeter;
The barrier layer of the active layer is any one or any combination of GaN、InGaN、InN、AlInN、AlN、AlInGaN、AlGaN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN and has a thickness of 10 to 500 Emeter.
Preferably, the upper waveguide layer and the lower waveguide layer are any one or any combination of GaN、InGaN、InN、AlInN、AlN、AlInGaN、AlGaN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN, the thickness of the upper waveguide layer is 20 to 8000 a, and the thickness of the lower waveguide layer is 20 to 6000 a.
Preferably, the lower confinement layer and the upper confinement layer comprise any one or any combination of GaN、AlGaN、InGaN、AlInGaN、AlN、InN、AlInN、SiC、Ga2O3、BN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP a, the upper confinement layer has a thickness of 1nm to 8000nm, and the lower confinement layer has a thickness of 50nm to 90000nm.
Preferably, the substrate comprises any one of sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, sapphire/SiN x, diamond, magnesium aluminate spinel MgAl 2O4、MgO、ZnO、ZrB2、LiAlO2 and LiGaO 2 composite substrate.
The beneficial effects of the invention are as follows: the invention sets a hole injection layer between the active layer and the upper waveguide layer of the semiconductor laser chip, and designs electron effective mass, thermal expansion coefficient, elastic coefficient, refractive index coefficient and lattice constant characteristic in the hole injection layer, thereby regulating and controlling the polarization electric field of the active layer, reducing the hole injection potential barrier, regulating and controlling the air-space wave function distribution, reducing the hole overflow of the active layer, improving the quasi-fermi level pinning of the hole, completely converting the injected carrier into laser photon output, improving the corresponding symmetry break away from the equilibrium state, and solving the problems of discontinuous or abrupt conductivity jump, junction voltage jump and series resistance sinking at the threshold value.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute a limitation on the application. In the drawings:
fig. 1 is a schematic structural diagram of a semiconductor laser chip according to an embodiment of the present invention;
Fig. 2 is a SIMS secondary ion mass spectrum of a semiconductor laser chip according to an embodiment of the present invention.
Reference numerals:
100. a substrate, 101, a lower confinement layer, 102, a lower waveguide layer, 103, an active layer, 104, an upper waveguide layer, 105, a hole injection layer, 106, and an upper confinement layer.
Detailed Description
In order to make the technical solutions and advantages of the embodiments of the present application more apparent, the following detailed description of exemplary embodiments of the present application is provided in conjunction with the accompanying drawings, and it is apparent that the described embodiments are only some embodiments of the present application and not exhaustive of all embodiments. It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other.
As shown in fig. 1 and 2, the present embodiment proposes a semiconductor laser chip including a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 106 disposed in this order from bottom to top, wherein a hole injection layer 105 is disposed between the active layer 103 and the upper waveguide layer 104.
Specifically, in the present embodiment, the semiconductor laser chip is provided with a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 106 in this order from bottom to top. The hole injection layer 105 is disposed between the active layer 103 and the upper waveguide layer 104. The hole injection layer 105 has electron effective mass, thermal expansion coefficient, elastic coefficient, refractive index coefficient, and lattice constant characteristics therein to improve the performance of the semiconductor laser chip.
The effective mass of electrons is the effective mass of electrons, and when the electrons in the semiconductor are subjected to external force, the electrons are subjected to external force, and interaction with atoms and electrons in the semiconductor is performed, so that the relationship between solving force and speed becomes difficult. The introduction of effective mass can summarize the effect of the internal potential field of the semiconductor, so that the internal potential field effect may not be involved when solving the rule of the semiconductor under the action of external force.
Coefficient of thermal expansion: the object has a swelling phenomenon due to a temperature change. The change ability is expressed as a change in the length value, i.e., a thermal expansion coefficient, caused by a change in unit temperature under constant pressure (pq). The thermal expansion coefficients of the respective objects are different, and the thermal expansion coefficient unit of a general metal is 1/degree (celsius). Thermal expansion is the volumetric expansion caused by the aggravation of lattice vibrations after the solid material is heated, and the excitation of lattice vibrations is the increase of thermal motion energy. The increment of energy when the unit temperature is increased is the heat capacity. The coefficient of thermal expansion is thus closely related to the heat capacity and has a similar law to the heat capacity. The thermal expansion of the solid material is related to the potential of the particles in the lattice, which is determined by the binding characteristics between the particles. The stronger the force between the particles, the deeper the potential well in which the particles are located, the less the amplitude of the particles increases, and the lower the coefficient of thermal expansion, accordingly. When the crystal structure types are the same, the melting point of the material having a large binding energy is also high, that is, the coefficient of expansion of the material having a high melting point is small.
The modulus of elasticity is the ratio of stress to strain experienced by an object.
Refractive index, which is an important physical quantity of light propagating in a medium, describes the change in speed of light propagating in different media. In semiconductor materials, refractive index is a critical parameter that is of great importance for understanding and designing optoelectronic devices. The refractive index is the ratio of the propagation speed of a ray of light in a medium to the propagation speed in vacuum. When the light propagation medium changes, such as a vacuum, into the semiconductor material, the speed of the light changes, resulting in a change in the direction of propagation of the light. And the refractive index is a physical quantity describing such a change in speed. The refractive index of a semiconductor material is closely related to factors such as constituent elements, lattice structure, and band structure. In general, the refractive index of a semiconductor material varies with the wavelength of light. This is because the different wavelengths of light interact differently with matter in the semiconductor material, resulting in a difference in refractive index.
The lattice constant, the lattice constant (or lattice constant) refers to the side length of the unit cell, i.e., the side length of each parallelepiped element, which is an important fundamental parameter of the crystal structure. It has a direct relationship with the binding energy between atoms. The change in lattice constant reflects the change in the composition, stress state, and the like inside the crystal.
Based on the above-described electron effective mass, thermal expansion coefficient, elastic coefficient, refractive index coefficient, and lattice constant characteristics, the present embodiment sets specific electron effective mass, thermal expansion coefficient, elastic coefficient, refractive index coefficient, and lattice constant distribution characteristics in the hole injection layer 105, specifically expressed as:
Electron effective mass:
the electron effective mass of the hole injection layer 105 has a profile of the function y=ax 2 +bx+c (a < 0);
coefficient of thermal expansion:
The thermal expansion coefficient of the hole injection layer 105 has a profile of a function y=dx 2 +ex+f (d < 0);
Coefficient of elasticity:
The elastic coefficient of the hole injection layer 105 has a curve distribution of the function y=gx 2 +hx+i (g < 0);
Refractive index coefficient:
the refractive index of the hole injection layer 105 has a profile of the function y=kx 2 +lx+m (k > 0);
Lattice constant:
The lattice constant of the hole injection layer 105 has a profile of the function y=rx 2 +sx+t (r > 0);
wherein the functional coefficients of the electron effective mass distribution, the thermal expansion coefficient distribution, the elastic coefficient distribution, the refractive index coefficient distribution, and the lattice constant distribution of the hole injection layer 105 have the following relationship: d is more than or equal to a and less than or equal to 0 and less than or equal to r and less than or equal to k.
In this embodiment, a hole injection layer 105 is disposed between an active layer 103 and an upper waveguide layer 104 of a semiconductor laser chip, and electron effective mass, thermal expansion coefficient, elastic coefficient, refractive index coefficient and lattice constant characteristics are designed in the hole injection layer 105, so as to regulate and control a polarization electric field of the active layer 103, reduce a hole injection barrier, regulate and control air-space wave function distribution, reduce hole overflow of the active layer 103, improve hole quasi fermi level pinning, fully convert injected carriers into laser photon output, improve corresponding symmetry break away from an equilibrium state, and solve the problems of discontinuous or abrupt conductivity jump, junction voltage jump and series resistance dip at a threshold.
Further, in the present embodiment, in the hole injection layer 105, in addition to its electron effective mass distribution, thermal expansion coefficient distribution, elastic coefficient distribution, refractive index distribution, and lattice constant distribution characteristics, the hole injection layer 105 of the present embodiment has Al/Si element ratio, H/Si element ratio, O/Si element ratio, mg/Si element ratio, and C/Si element ratio distribution characteristics, and corresponding variation trends. The peak positions of the Al/Si element ratio, the O/Si element ratio, the Mg/Si element ratio, and the C/Si element ratio in the hole injection layer 105 all decrease in the direction of the lower confinement layer 101, and the peak position of the H/Si element ratio in the hole injection layer 105 decreases in the direction of the upper confinement layer 106.
The angle of decrease in the direction of the lower confinement layer 101 of the peak position of the Al/Si element ratio of the hole injection layer 105 is α, the angle of decrease in the direction of the upper confinement layer 106 of the peak position of the H/Si element ratio of the hole injection layer 105 is β, the angle of decrease in the direction of the lower confinement layer 101 of the peak position of the O/Si element ratio of the hole injection layer 105 is γ, the angle of decrease in the direction of the lower confinement layer 101 of the peak position of the Mg/Si element ratio of the hole injection layer 105 is θ, and the angle of decrease in the direction of the lower confinement layer 101 of the peak position of the C/Si element ratio of the hole injection layer 105 is δ, wherein: gamma is less than or equal to delta is less than or equal to beta is less than or equal to theta and less than or equal to alpha.
According to the embodiment, the relation of changing trends and limiting changing angles of the Al/Si element proportion, the H/Si element proportion, the O/Si element proportion, the Mg/Si element proportion and the C/Si element proportion in the hole injection layer 105 is set, so that the polarization electric field of the active layer 103 is further regulated and controlled, the hole injection potential barrier is reduced, the air-air wave function distribution is regulated and controlled, the hole overflow of the active layer 103 is reduced, meanwhile, the quasi-fermi level pinning of holes is improved, injected carriers are completely converted into laser photon output, the corresponding symmetry defect far from the equilibrium state is improved, and the problems of discontinuous or abrupt conductivity jump, junction voltage jump and series resistance sinking at the threshold value are solved.
Further, in this embodiment, the hole injection layer 105 is any one or any combination of GaN、InGaN、InN、AlInN、AlN、AlInGaN、AlGaN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN, and the thickness of the hole injection layer 105 is 5 to 5000 a.
The active layer 103 is a periodic structure formed by a well layer and a barrier layer, and the period number is 3-1. The well layer of the active layer 103 is any one or any combination of GaN、InGaN、InN、AlInN、AlN、AlInGaN、AlGaN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN a and has a thickness of 10 to 200 a. The barrier layer of the active layer 103 is any one or any combination of GaN、InGaN、InN、AlInN、AlN、AlInGaN、AlGaN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN a and has a thickness of 10 to 500 a.
The upper waveguide layer 104 and the lower waveguide layer 102 are any one or any combination of GaN、InGaN、InN、AlInN、AlN、AlInGaN、AlGaN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN, the thickness of the upper waveguide layer 104 is 20 to 8000 a, and the thickness of the lower waveguide layer 102 is 20 to 6000 a.
The lower confinement layer 101 and the upper confinement layer 106 comprise any one or any combination of GaN、AlGaN、InGaN、AlInGaN、AlN、InN、AlInN、SiC、Ga2O3、BN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP, the upper confinement layer 106 has a thickness of 1nm to 8000nm, and the lower confinement layer 101 has a thickness of 50nm to 90000nm.
The substrate 100 includes any one of a sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, a sapphire/SiN x, diamond, magnesium aluminate spinel MgAl 2O4、MgO、ZnO、ZrB2、LiAlO2, and a LiGaO 2 composite substrate.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present application without departing from the spirit or scope of the application. Thus, it is intended that the present application also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (10)
1. The semiconductor laser chip comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top, and is characterized in that a hole injection layer is arranged between the active layer and the upper waveguide layer, and the hole injection layer has the characteristics of effective electron mass, thermal expansion coefficient, elastic coefficient, refractive index coefficient and lattice constant.
2. The semiconductor laser chip of claim 1, wherein the electron effective mass of the hole injection layer has a profile of a function y = ax 2 + bx + c (a < 0);
the thermal expansion coefficient of the hole injection layer has a curve distribution of a function y=dx 2 +ex+f (d < 0);
The elastic coefficient of the hole injection layer has a curve distribution of a function y=gx 2 +hx+i (g < 0);
The refractive index of the hole injection layer has a profile of a function y=kx 2 +lx+m (k > 0);
The lattice constant of the hole injection layer has a profile of the function y=rx 2 +sx+t (r > 0).
3. The semiconductor laser chip according to claim 2, wherein a function coefficient of an electron effective mass distribution, a thermal expansion coefficient distribution, an elastic coefficient distribution, a refractive index coefficient distribution, and a lattice constant distribution of the hole injection layer has a relationship of: d is more than or equal to a and less than or equal to 0 and less than or equal to r and less than or equal to k.
4. The semiconductor laser chip according to claim 1, wherein the hole injection layer further has distribution characteristics of an Al/Si element ratio, an H/Si element ratio, an O/Si element ratio, an Mg/Si element ratio, and a C/Si element ratio therein, peak positions of the Al/Si element ratio, the O/Si element ratio, the Mg/Si element ratio, and the C/Si element ratio in the hole injection layer all have a downward trend toward the lower confinement layer, and peak positions of the H/Si element ratio in the hole injection layer have a downward trend toward the upper confinement layer.
5. The semiconductor laser chip according to claim 1, wherein a lowering angle of a peak position of an Al/Si element ratio of the hole injection layer toward a lower confinement layer direction is α;
The descending angle of the peak position of the H/Si element proportion of the hole injection layer in the upward limiting layer direction is beta;
the descending angle of the peak position of the O/Si element proportion of the hole injection layer in the direction of the downward limiting layer is gamma;
The descending angle of the peak position of the Mg/Si element proportion of the hole injection layer in the direction of the downward limiting layer is theta;
The descending angle of the peak position of the C/Si element proportion of the hole injection layer in the direction of the downward limiting layer is delta;
Wherein: gamma is less than or equal to delta is less than or equal to beta is less than or equal to theta and less than or equal to alpha.
6. The semiconductor laser chip of claim 1, wherein the hole injection layer is any one or any combination of GaN、InGaN、InN、AlInN、AlN、AlInGaN、AlGaN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN a to 5000 a thick.
7. The semiconductor laser chip according to claim 1, wherein the active layer is a periodic structure composed of a well layer and a barrier layer, and the number of periods is 3-1;
The well layer of the active layer is any one or any combination of GaN、InGaN、InN、AlInN、AlN、AlInGaN、AlGaN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN, and the thickness is 10 to 200 Emeter;
The barrier layer of the active layer is any one or any combination of GaN、InGaN、InN、AlInN、AlN、AlInGaN、AlGaN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN and has a thickness of 10 to 500 Emeter.
8. The semiconductor laser chip of claim 1, wherein the upper and lower waveguide layers are any one or any combination of GaN、InGaN、InN、AlInN、AlN、AlInGaN、AlGaN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN, the upper waveguide layer has a thickness of 20 to 8000 a, and the lower waveguide layer has a thickness of 20 to 6000 a.
9. The semiconductor laser chip of claim 1 wherein the lower confinement layer and the upper confinement layer comprise any one or any combination of GaN、AlGaN、InGaN、AlInGaN、AlN、InN、AlInN、SiC、Ga2O3、BN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP a, the upper confinement layer has a thickness of 1nm to 8000nm, and the lower confinement layer has a thickness of 50nm to 90000nm.
10. The semiconductor laser chip of claim 1 wherein the substrate comprises any one of sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, sapphire/SiN x, diamond, magnesium aluminate spinel MgAl 2O4、MgO、ZnO、ZrB2、LiAlO2, and a LiGaO 2 composite substrate.
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