CN117937242A - Semiconductor laser chip - Google Patents
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- CN117937242A CN117937242A CN202410053998.5A CN202410053998A CN117937242A CN 117937242 A CN117937242 A CN 117937242A CN 202410053998 A CN202410053998 A CN 202410053998A CN 117937242 A CN117937242 A CN 117937242A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 18
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- 239000010980 sapphire Substances 0.000 claims description 12
- 239000002131 composite material Substances 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 6
- 229910010092 LiAlO2 Inorganic materials 0.000 claims description 3
- 229910020068 MgAl Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910007948 ZrB2 Inorganic materials 0.000 claims description 3
- VWZIXVXBCBBRGP-UHFFFAOYSA-N boron;zirconium Chemical compound B#[Zr]#B VWZIXVXBCBBRGP-UHFFFAOYSA-N 0.000 claims description 3
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- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
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Abstract
The invention provides a semiconductor laser chip, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top, wherein the active layer has the characteristics of elasticity coefficient distribution, dielectric constant distribution and forbidden bandwidth distribution. The active layer in the semiconductor laser chip is designed to have specific elasticity coefficient distribution, dielectric constant distribution and forbidden bandwidth distribution characteristics, so that the bipolar conductivity effect of the active region carrier after saturation is improved, the series resistance of the active layer is reduced, and the voltage and threshold current density of the laser are reduced.
Description
Technical Field
The application relates to the field of semiconductor photoelectric devices, in particular to a semiconductor laser chip.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The laser has various types and various classification modes, and mainly comprises solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state semiconductor laser chip has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like.
The laser is largely different from the nitride semiconductor light emitting diode:
1) The laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level;
2) The current density of the laser reaches KA/cm 2, which is higher than that of the nitride light-emitting diode by more than 2 orders of magnitude, so that stronger electron leakage, more serious Auger recombination, stronger polarization effect and more serious electron-hole mismatch are caused, and more serious efficiency attenuation Droop effect is caused;
3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated;
4) The principle is different: the light emitting diode generates radiation composite luminescence by transferring electron holes to an active layer or a p-n junction under the action of external voltage, and the laser can perform lasing only when the lasing condition is satisfied, the inversion distribution of carriers in an active area is necessarily satisfied, the stimulated radiation oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss when the threshold condition is satisfied, and finally laser is output.
The nitride semiconductor ultraviolet laser has the following problems: after the laser is excited, the carrier concentration of the active region of the multiple quantum well is saturated, the bipolar conductivity effect is weakened, the series resistance of the laser is increased, and the voltage of the laser is increased.
Disclosure of Invention
In order to solve one of the above technical problems, the present invention provides a semiconductor laser chip.
The embodiment of the invention provides a semiconductor laser chip, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top, wherein the active layer has the characteristics of elasticity coefficient distribution, dielectric constant distribution and forbidden bandwidth distribution.
Preferably, the elastic coefficient distribution of the active layer has an approximate quadratic function y=ax 2 +bx+c (a < 0) curve distribution.
Preferably, the dielectric constant profile of the active layer has a profile of the function y=dx 2 +ex+f (d > 0).
Preferably, the forbidden bandwidth distribution of the active layer has a curve distribution of a function y=gx 2 +hx+i (g < 0).
Preferably, the function coefficients of the elastic coefficient distribution, the dielectric constant distribution and the forbidden bandwidth distribution of the active layer have the following relationship: g is more than or equal to a and less than 0 and less than d.
Preferably, the downward angle of the peak position of the In/C element ratio distribution of the active layer In the downward confinement layer direction is α, the upward angle of the peak position of the In/C element ratio distribution of the active layer In the upward confinement layer direction is β, the downward angle of the peak position of the In/O element ratio distribution of the active layer In the downward confinement layer direction is γ, the downward angle of the peak position of the In/O element ratio distribution of the active layer In the upward confinement layer direction is θ, the downward angle of the peak position of the In/H element ratio distribution of the active layer In the downward confinement layer direction is δ, the downward angle of the peak position of the In/H element ratio distribution of the active layer In the upward confinement layer direction is σ, wherein: and the sigma is more than or equal to 25 degrees and less than or equal to delta is more than or equal to delta and less than or equal to theta and less than or equal to beta and less than or equal to alpha and less than or equal to 90 degrees.
Preferably, the peak position of the In/Si element proportion distribution of the active layer is reduced downwards by an angle of the direction of the limiting layerThe descending angle of the peak position of the In/Si element proportion distribution of the active layer In the upward limiting layer direction is psi, the descending angle of the peak position of the In/Mg element proportion distribution of the active layer In the downward limiting layer direction is mu, and the descending angle of the peak position of the In/Mg element proportion distribution of the active layer In the upward limiting layer direction is rho, wherein:
Preferably, the active layer is a quantum well formed by a well layer and a barrier layer, and the cycle number is 3-1;
the well layer of the active layer is any one or any combination of InGaN, gaN, alInN, inN, alInGaN, and the thickness is 10 to 120 Emeter;
the barrier layer of the active layer is any one or any combination of GaN, alGaN, alInGaN, alN, alInN and has a thickness of 10 to 200 Emeter.
Preferably, the upper waveguide layer is any one or any combination of GaN, alGaN, alInGaN, inN, inGaN, alInN and has a thickness of 10 to 5000 angstroms;
The lower waveguide layer is any one or any combination of GaN, alGaN, alInGaN, inN, inGaN, alInN and has a thickness of 10 to 5000 angstroms;
The upper limiting layer is any one or any combination of GaN, alGaN, alInGaN, alN, inGaN, alInN and has the thickness of 10 to 50000 angstroms;
the lower limiting layer is any one or any combination of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga O3 and BN.
Preferably, the substrate comprises any one of sapphire, silicon, ge, ga 2O3, BN, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 composite substrate, sapphire/AlN composite substrate, sapphire/SiN x, diamond, magnesium aluminate spinel MgAl 2O4、MgO、ZnO、ZrB2、LiAlO2 and LiGaO 2 composite substrate.
The beneficial effects of the invention are as follows: the active layer in the semiconductor laser chip is designed to have specific elasticity coefficient distribution, dielectric constant distribution and forbidden bandwidth distribution characteristics, so that the bipolar conductivity effect of the active region carrier after saturation is improved, the series resistance of the active layer is reduced, and the voltage and threshold current density of the laser are reduced.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute a limitation on the application. In the drawings:
fig. 1 is a schematic structural diagram of a semiconductor laser chip according to an embodiment of the present invention;
FIG. 2 is a SIMS secondary ion mass spectrum of a semiconductor laser chip according to an embodiment of the present invention;
fig. 3 is a partially amplified SIMS secondary ion mass spectrum of a semiconductor laser chip according to an embodiment of the present invention.
Reference numerals:
100. Substrate, 101, lower confinement layer, 102, lower waveguide layer, 103, active layer, 104, upper waveguide layer, 105, upper confinement layer.
Detailed Description
In order to make the technical solutions and advantages of the embodiments of the present application more apparent, the following detailed description of exemplary embodiments of the present application is provided in conjunction with the accompanying drawings, and it is apparent that the described embodiments are only some embodiments of the present application and not exhaustive of all embodiments. It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other.
As shown in fig. 1 to 3, the present embodiment proposes a semiconductor laser chip including a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105, which are disposed in this order from bottom to top. Wherein the active layer 103 has a distribution characteristic of a specific parameter.
Specifically, in the present embodiment, the semiconductor laser chip is provided with a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105 in this order from bottom to top. The active layer 103 is a quantum well formed by a well layer and a barrier layer, and the cycle number is 3-1. The active layer 103 has a distribution characteristic of a specific parameter. Specifically, the characteristics of the elastic coefficient distribution, the dielectric constant distribution and the forbidden bandwidth distribution are described.
The elastic modulus refers to the ratio of stress to strain experienced by an object.
The dielectric constant is a major parameter reflecting the dielectric or polarization properties of a piezoelectric material dielectric under the influence of an electrostatic field, and is generally denoted by epsilon. Piezoelectric elements for different applications have different dielectric constants for piezoelectric materials. When the shape and size of the piezoelectric material are fixed, the dielectric constant epsilon is determined by measuring the inherent capacitance CP of the piezoelectric material.
The forbidden band refers to an energy interval in which the energy state density is zero in the energy band structure. Is commonly used to represent an energy interval where the density of energy states between the valence and conduction bands is zero. The size of the forbidden band width determines whether the material has semiconducting or insulating properties. The semiconductor has a small forbidden band width, and when the temperature rises, electrons can be excited to be transferred to a conduction band, so that the material has conductivity. The forbidden bandwidth of the insulator is large and even at higher temperatures, it is still an electrically poor conductor.
Based on the characteristics of the above-mentioned elastic coefficient, dielectric constant, and forbidden bandwidth, the present embodiment designs the elastic coefficient distribution, dielectric constant distribution, and forbidden bandwidth distribution in the active layer 103 as follows:
Distribution of elastic coefficient:
the elastic coefficient distribution of the active layer 103 has an approximate quadratic function y=ax 2 +bx+c (a < 0) curve distribution;
Dielectric constant distribution:
The dielectric constant profile of the active layer 103 has a profile of a function y=dx 2 +ex+f (d > 0);
Forbidden band width distribution:
The forbidden bandwidth distribution of the active layer 103 has a curve distribution of a function y=gx 2 +hx+i (g < 0);
wherein the function coefficients of the elastic coefficient distribution, the dielectric constant distribution, and the forbidden bandwidth distribution of the active layer 103 have the following relationship: g is more than or equal to a and less than 0 and less than d.
In the embodiment, the active layer 103 in the semiconductor laser chip is designed to have specific elasticity coefficient distribution, dielectric constant distribution and forbidden bandwidth distribution characteristics, so that bipolar conductivity effect of the active region after carriers are saturated is improved, series resistance of the active layer 103 is reduced, and voltage and threshold current density of the laser are reduced.
Further, in this embodiment, the active layer 103 further has In/C element ratio distribution, in/O element ratio distribution, in/H element ratio distribution, in/Si element ratio distribution, and In/Mg element ratio distribution characteristics, and peak positions of the above In/C element ratio distribution, in/O element ratio distribution, in/H element ratio distribution, in/Si element ratio distribution, and In/Mg element ratio distribution are In a certain distribution trend In the upward confinement layer 105 or the lower confinement layer 101 direction, specifically:
In/C element ratio distribution:
the peak position of the In/C element proportion distribution of the active layer 103 tends to decrease toward the lower confinement layer 101;
the peak position of the In/C element proportion distribution of the active layer 103 tends to decrease toward the upper confinement layer 105;
In/O element ratio distribution:
the peak position of the In/O element ratio distribution of the active layer 103 tends to decrease toward the lower confinement layer 101;
the peak position of the In/O element ratio distribution of the active layer 103 tends to decrease toward the upper confinement layer 105;
In/H element ratio distribution:
The peak position of the In/H element proportion distribution of the active layer 103 tends to decrease toward the lower confinement layer 101;
the peak position of the In/H element ratio distribution of the active layer 103 tends to decrease toward the upper confinement layer 105;
In/Si element ratio distribution:
the peak position of the In/Si element ratio distribution of the active layer 103 tends to decrease toward the lower confinement layer 101;
the peak position of the In/Si element ratio distribution of the active layer 103 tends to decrease toward the upper confinement layer 105;
In/Mg element ratio distribution:
the peak position of the In/Mg element proportion distribution of the active layer 103 tends to decrease toward the lower confinement layer 101;
the peak position of the In/Mg element proportion distribution of the active layer 103 tends to decrease toward the upper confinement layer 105;
Wherein, the lowering angle of the peak position of the In/C element ratio distribution of the active layer 103 In the direction of the lower confinement layer 101 is α, the lowering angle of the peak position of the In/C element ratio distribution of the active layer 103 In the direction of the upper confinement layer 105 is β, the lowering angle of the peak position of the In/O element ratio distribution of the active layer 103 In the direction of the lower confinement layer 101 is γ, the lowering angle of the peak position of the In/O element ratio distribution of the active layer 103 In the direction of the upper confinement layer 105 is θ, the lowering angle of the peak position of the In/H element ratio distribution of the active layer 103 In the direction of the lower confinement layer 101 is δ, the lowering angle of the peak position of the In/H element ratio distribution of the active layer 103 In the direction of the upper confinement layer 105 is σ, and the lowering angle has the following relationship: and the sigma is more than or equal to 25 degrees and less than or equal to delta is more than or equal to delta and less than or equal to theta and less than or equal to beta and less than or equal to alpha and less than or equal to 90 degrees.
In addition, the peak position of the In/Si element ratio distribution of the active layer 103 is lowered by an angle toward the lower confinement layer 101The falling angle In the direction of the upper confinement layer 105 of the peak position of the In/Si element ratio distribution of the active layer 103 is ψ, the falling angle In the direction of the lower confinement layer 101 of the peak position of the In/Mg element ratio distribution of the active layer 103 is μ, the falling angle In the direction of the upper confinement layer 105 of the peak position of the In/Mg element ratio distribution of the active layer 103 is ρ, and the above falling angle has the following relationship: /(I)
According to the embodiment, through designing the In/C element proportion distribution, the In/O element proportion distribution, the In/H element proportion distribution, the In/Si element proportion distribution and the In/Mg element proportion distribution characteristics of the active layer 103, the bipolar conductivity effect after saturation of carriers In an active region can be further improved, the series resistance of the active layer 103 is reduced, and the voltage and the threshold current density of a laser are reduced.
Further, the well layer of the active layer 103 is any one or any combination of InGaN, gaN, alInN, inN, alInGaN a and has a thickness of 10 to 120 a. The barrier layer of the active layer 103 is any one or any combination of GaN, alGaN, alInGaN, alN, alInN and has a thickness of 10 to 200 a.
The upper waveguide layer 104 is any one or any combination of GaN, alGaN, alInGaN, inN, inGaN, alInN a to 5000 a thick.
The lower waveguide layer 102 is any one or any combination of GaN, alGaN, alInGaN, inN, inGaN, alInN a to 5000 a thick.
The upper confinement layer 105 is any one or any combination of GaN, alGaN, alInGaN, alN, inGaN, alInN a with a thickness of 10 a to 50000 a.
The lower confinement layer 101 is any one or any combination of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga O3 and BN.
The substrate 100 includes any one of sapphire, silicon, ge, ga 2O3, BN, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, sapphire/SiN x, diamond, magnesium aluminate spinel MgAl 2O4、MgO、ZnO、ZrB2、LiAlO2, and a LiGaO 2 composite substrate.
The following table shows the comparison of the main performance parameters of the semiconductor laser chip proposed in this embodiment with those of the conventional laser chip:
As shown in the above table, the series resistance of the semiconductor laser chip of the present embodiment was reduced from 29 Ω to 9 Ω by about 69%; the threshold voltage drops from 8.5V to 5.3V by about 38%; the threshold current density was reduced from 3.6kA/cm 2 to 0.96kA/cm 2 by about 73%. Therefore, the performance of the semiconductor laser chip of the embodiment is significantly improved compared with that of the conventional semiconductor laser chip.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present application without departing from the spirit or scope of the application. Thus, it is intended that the present application also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (10)
1. A semiconductor laser chip comprising a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper confinement layer, which are sequentially arranged from bottom to top, wherein the active layer has an elastic coefficient distribution, a dielectric constant distribution and a forbidden bandwidth distribution characteristic.
2. The semiconductor laser chip of claim 1, wherein the elastic coefficient distribution of the active layer has an approximate quadratic function y = ax 2 + bx + c (a < 0) curve distribution.
3. The semiconductor laser chip of claim 2, wherein the dielectric constant profile of the active layer has a profile of a function y = dx 2 +ex+f (d > 0).
4. A semiconductor laser chip according to claim 3, characterized in that the forbidden bandwidth distribution of the active layer has a profile of the function y = gx 2 + hx + i (g < 0).
5. The semiconductor laser chip of claim 4, wherein the functional coefficients of the elastic coefficient distribution, the dielectric constant distribution, and the forbidden bandwidth distribution of the active layer have the following relationship: g is more than or equal to a and less than 0 and less than d.
6. The semiconductor laser chip according to claim 1, wherein a falling angle of a peak position of the In/C element proportional distribution of the active layer In a downward confinement layer direction is α, a falling angle of a peak position of the In/C element proportional distribution of the active layer In an upward confinement layer direction is β, a falling angle of a peak position of the In/O element proportional distribution of the active layer In a downward confinement layer direction is γ, a falling angle of a peak position of the In/O element proportional distribution of the active layer In an upward confinement layer direction is θ, a falling angle of a peak position of the In/H element proportional distribution of the active layer In a downward confinement layer direction is δ, a falling angle of a peak position of the In/H element proportional distribution of the active layer In an upward confinement layer direction is σ, wherein: and the sigma is more than or equal to 25 degrees and less than or equal to delta is more than or equal to delta and less than or equal to theta and less than or equal to beta and less than or equal to alpha and less than or equal to 90 degrees.
7. The semiconductor laser chip of claim 1, wherein a peak position of the In/Si element ratio distribution of the active layer is lowered by an angle toward the lower confinement layerThe descending angle of the peak position of the In/Si element proportion distribution of the active layer In the upward limiting layer direction is psi, the descending angle of the peak position of the In/Mg element proportion distribution of the active layer In the downward limiting layer direction is mu, and the descending angle of the peak position of the In/Mg element proportion distribution of the active layer In the upward limiting layer direction is rho, wherein: /(I)
8. The semiconductor laser chip according to claim 1, wherein the active layer is a quantum well composed of a well layer and a barrier layer, and the number of periods is 3-1;
the well layer of the active layer is any one or any combination of InGaN, gaN, alInN, inN, alInGaN, and the thickness is 10 to 120 Emeter;
the barrier layer of the active layer is any one or any combination of GaN, alGaN, alInGaN, alN, alInN and has a thickness of 10 to 200 Emeter.
9. The semiconductor laser chip of claim 1, wherein the upper waveguide layer is any one or any combination of GaN, alGaN, alInGaN, inN, inGaN, alInN a to 5000 a thick;
The lower waveguide layer is any one or any combination of GaN, alGaN, alInGaN, inN, inGaN, alInN and has a thickness of 10 to 5000 angstroms;
The upper limiting layer is any one or any combination of GaN, alGaN, alInGaN, alN, inGaN, alInN and has the thickness of 10 to 50000 angstroms;
the lower limiting layer is any one or any combination of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga O3 and BN.
10. The semiconductor laser chip of claim 1 wherein the substrate comprises any one of sapphire, silicon, ge, ga 2O3, BN, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 composite substrate, sapphire/AlN composite substrate, sapphire/SiN x, diamond, magnesium aluminate spinel MgAl 2O4、MgO、ZnO、ZrB2、LiAlO2, and LiGaO 2 composite substrate.
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| CN202410053998.5A CN117937242A (en) | 2024-01-15 | 2024-01-15 | Semiconductor laser chip |
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