CN117954966A - Epitaxial structure of gallium nitride-based semiconductor laser - Google Patents
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 46
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 230000004888 barrier function Effects 0.000 claims abstract description 18
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- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 18
- 229910005542 GaSb Inorganic materials 0.000 claims description 18
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 18
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 18
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 18
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 18
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 18
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052594 sapphire Inorganic materials 0.000 claims description 12
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- 229910020068 MgAl Inorganic materials 0.000 claims description 3
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Abstract
The invention provides an epitaxial structure of a gallium nitride-based semiconductor laser, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top, wherein the active layer is a periodic quantum well structure with rich In clusters, and the periodic quantum well structure consists of a well layer and a barrier layer. The invention can inhibit the two-dimensional island or three-dimensional island growth mode of the active layer growth process of the laser, promote the step flow growth mode, further inhibit the aggregation of In-rich clusters at the defect position dislocation, promote the thermal stability, crystal quality, interface quality and interface roughness of the active layer, reduce the non-radiative recombination center, reduce the nonuniform broadening of the laser spectrum, inhibit the optical catastrophe of the laser, and promote the aging life of the laser; meanwhile, the thermal mismatch and quantum confinement stark effect are reduced, the energy band inclination is reduced, the overlapping and recombination probability of electron hole wave functions is improved, the threshold current density of the laser is reduced, and the quantum efficiency is improved.
Description
Technical Field
The application relates to the field of semiconductor photoelectric devices, in particular to an epitaxial structure of a gallium nitride-based semiconductor laser.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, atomic clock, ranging, spectrum analysis, cutting, submarine communication, precision welding, quantum sensor, high-density optical storage and the like. The laser has various types and various classification modes, and mainly comprises solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state gallium nitride-based semiconductor laser has the advantages of good monochromaticity, good directivity, small volume, high brightness, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like.
The laser is largely different from the nitride semiconductor light emitting diode:
1) The laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level;
2) The current density of the laser reaches KA/cm 2, which is higher than that of the nitride light-emitting diode by more than 2 orders of magnitude, so that stronger electron leakage, more serious Auger recombination, stronger polarization effect and more serious electron-hole mismatch are caused, and more serious efficiency attenuation Droop effect is caused;
3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated;
4) The principle is different: the light emitting diode generates radiation composite luminescence by transferring electron holes to an active layer or a p-n junction under the action of external voltage, and the laser can perform lasing only when the lasing condition is satisfied, the inversion distribution of carriers in an active area is necessarily satisfied, the stimulated radiation oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss when the threshold condition is satisfied, and finally laser is output.
The nitride gallium nitride-based semiconductor laser has the following problems: the lattice mismatch and strain of the active layer are greatly induced to generate a strong voltage electric polarization effect, a strong QCSE quantum confinement Stark effect is generated, the energy band of a quantum well is inclined, the valence band difference of a laser is increased, hole injection is inhibited, holes are more difficult to transport in the quantum well, carrier injection is uneven, the overlapping probability of an electron-hole wave function is reduced, so that uneven gain of the laser is caused, the radiation recombination efficiency is reduced, and the improvement of the electric lasing gain of the laser is limited; the increase of the In component of the quantum well can generate fluctuation and strain of the In component, the gain spectrum of the laser is widened, and the peak gain is reduced; the In-N bond energy is lower, the InGaN with a high In component needs lower temperature In the growth process to ensure In incorporation, but under the low-temperature growth condition, the atomic mobility is low, the low-temperature NH3 cracking efficiency is low, the intersolubility gap between InN and GaN is larger, the lattice mismatch is large, the In-N segregation occurs at the dislocation, a two-dimensional island structure or a three-dimensional island structure occurs, the defect density In the active layer is high, the InN phase separation segregation, the thermal degradation, the component fluctuation and the crystal quality are not ideal, the quantum well quality is poor, the interface is rough, the interface quality is low and a large number of In clusters are rich, the laser spectrum is unevenly widened, and the non-radiative recombination center or the optical catastrophe are increased. The In component of the quantum well is increased, the thermal stability is deteriorated, the high-temperature p-type semiconductor and the growth of the limiting layer can cause thermal degradation and lattice thermal mismatch of the active layer, the quality and interface quality of the active layer are reduced, the radiation efficiency is reduced, and the service life of the laser is shortened.
Disclosure of Invention
In order to solve one of the above technical problems, the present invention provides an epitaxial structure of a gallium nitride-based semiconductor laser.
The embodiment of the invention provides an epitaxial structure of a gallium nitride-based semiconductor laser, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top, wherein the active layer is a periodic quantum well structure which consists of a well layer and a barrier layer and is provided with In clusters, and the active layer is provided with thermal conductivity distribution, phillips ionization degree distribution and conduction band effective state density distribution characteristics.
Preferably, the cycle number of the active layer is m.ltoreq.m.ltoreq.5, and the In-rich cluster density of the active layer is less than or equal to 5E8cm -2.
Preferably, the thermal conductivity profile of the active layer has a profile of the function y=acos (bx+c);
The philips ionization degree distribution of the active layer has a profile of a function y= Dcos (ex+f);
The conduction band effective state density distribution of the active layer has a curve distribution of a function y=gcos (hx+i);
Wherein D is more than or equal to A is more than or equal to G.
Preferably, the thermal conductivity a of the well layer of the active layer is less than or equal to the thermal conductivity b of the barrier layer;
The Philips ionization degree c of the well layer of the active layer is larger than or equal to the Philips ionization degree d of the barrier layer;
And the effective state density e of the conduction band of the well layer of the active layer is smaller than or equal to the effective state density f of the conduction band of the barrier layer.
Preferably, the thermal conductivity of the upper waveguide layer is n, the thermal conductivity of the lower waveguide layer is p, the thermal conductivity of the upper confinement layer is q, and the thermal conductivities of the active layer, the upper waveguide layer, the lower waveguide layer and the upper confinement layer have the following relationship: q is more than or equal to p is more than or equal to n is more than or equal to b is more than or equal to a.
Preferably, the philips ionization degree of the upper waveguide layer is r, the philips ionization degree of the lower waveguide layer is s, the philips ionization degree of the lower confinement layer is t, and the philips ionization degrees of the active layer, the upper waveguide layer, the lower waveguide layer and the lower confinement layer have the following relationship: t is more than or equal to d is more than or equal to r is more than or equal to s is more than or equal to c.
Preferably, the effective state density of the conduction band of the upper waveguide layer is u, the effective state density of the conduction band of the lower waveguide layer is v, the effective state density of the conduction band of the upper confinement layer is w, and the effective state densities of the conduction bands of the active layer, the upper waveguide layer, the lower waveguide layer and the upper confinement layer have the following relationship: and e is not less than u and not more than v and not less than w and not more than f.
Preferably, the well layer of the active layer is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN, the thickness is g, g is more than or equal to 5 and less than or equal to 100 angstroms, and the light-emitting wavelength is 200nm to 2000nm;
the barrier layer of the active layer is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN, and the thickness h is more than or equal to 10 and less than or equal to 200.
Preferably, the lower waveguide layer is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN, and the thickness is i is more than or equal to 10 and less than or equal to 9000;
The upper waveguide layer is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN, and the thickness j is more than or equal to 10 and less than or equal to 9000;
The lower limiting layer is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN, and the thickness is k, wherein k is more than or equal to 10 and less than or equal to 90000;
The upper limiting layer is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN, and the thickness is l, i is more than or equal to 10 and less than or equal to 80000.
Preferably, the substrate comprises any one of sapphire, silicon, ge, siC, alN, gaN, gaAs, gaSb, inSb, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, sapphire/SiN x, magnesium aluminate spinel MgAl 2O4, mgO, znO, mgO, spinel, zrB 2、LiAlO2, and LiGaO 2 composite substrate.
The beneficial effects of the invention are as follows: according to the invention, in-rich clusters are added into an active layer of an epitaxial structure of a gallium nitride-based semiconductor laser, and the characteristics of thermal conductivity distribution, phillips ionization degree distribution and effective state density distribution of a conduction band of the active layer are set, so that a two-dimensional island or three-dimensional island growth mode of the active layer of the laser In the growth process is inhibited, a step flow growth mode is promoted, the In-rich clusters are further inhibited from gathering at defect positions, the thermal stability, crystal quality, interface quality and interface roughness of the active layer are improved, the non-radiative recombination center is reduced, the non-uniform broadening of a laser spectrum is reduced, the optical catastrophe of the laser is inhibited, the ageing life of the laser is prolonged, and the ageing life is prolonged from 1 kilohour to 5 kilo hours; meanwhile, the thermal mismatch and quantum confinement stark effect are reduced, the energy band inclination is reduced, the overlapping and recombination probability of electron hole wave functions is improved, the threshold current density of the laser is reduced, and the quantum efficiency is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute a limitation on the application. In the drawings:
Fig. 1 is a schematic structural diagram of an epitaxial structure of a gallium nitride-based semiconductor laser according to an embodiment of the present invention;
fig. 2 is a TEM transmission electron microscope image of an epitaxial structure of a gallium nitride-based semiconductor laser according to an embodiment of the present invention.
Reference numerals:
100. Substrate, 101, lower confinement layer, 102, lower waveguide layer, 103, active layer, 104, upper waveguide layer, 105, upper confinement layer.
Detailed Description
In order to make the technical solutions and advantages of the embodiments of the present application more apparent, the following detailed description of exemplary embodiments of the present application is provided in conjunction with the accompanying drawings, and it is apparent that the described embodiments are only some embodiments of the present application and not exhaustive of all embodiments. It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other.
As shown In fig. 1 and 2, the present embodiment proposes an epitaxial structure of a gallium nitride-based semiconductor laser, including a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105, which are sequentially disposed from bottom to top, wherein the active layer 103 has In-rich clusters therein.
Specifically, in the present embodiment, the epitaxial structure of the gallium nitride-based semiconductor laser is provided with the substrate 100, the lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, and the upper confinement layer 105 in this order from bottom to top. The active layer 103 is a periodic quantum well structure composed of a well layer and a barrier layer, and the period number is m < 1 > m < 5. In this quantum well structure has In-rich clusters, and In this embodiment, the In-rich clusters In the active layer 103 are low-density In-rich clusters, and the In-rich cluster density is less than or equal to 5E8cm -2, so as to improve the performance of the semiconductor laser. In this embodiment, the active layer 103 also has a thermal conductivity distribution, a phillips ionization degree distribution, and a conduction band effective state density distribution characteristic.
Thermal conductivity, also known as thermal conductivity or thermal conductivity (Thermal Conductivity), is a physical quantity that characterizes a material's ability to conduct heat. It is defined as the amount of heat per unit section, length of material that is directly conducted per unit temperature difference and per unit time. For example, materials with higher thermal conductivity can conduct heat more efficiently, while materials with lower thermal conductivity can cause more energy loss during heat transfer.
Phillips ionization degree (Philips ionicity) is one of the basic physical parameters of GaN materials, which characterizes the ionization degree characteristics and the electronic characteristic parameters of the materials. Specific related concepts of Phillips ionization degree are described in more detail in "J.A.VanVechten.Quantum Dielectric Theory ofElectronegativity in CovalentSyst ems.III.Pressure-Temperature Phase Diagrams,Heats ofMixing,andDistribution Co efficients[J].Phys.Rev.B,1973,7:1479-1507.".
Conduction band is an important concept in solid physics, and it represents the valence electron of some atoms in a solid that is excited to a high energy state, so that the detached atom becomes a free electron, and can freely move in the solid to form a current. The effective state density is then a description of the number of states in the conduction band that can be occupied. In the conduction band, the effective state density represents the number of all occupied energy states.
Based on the characteristics of the thermal conductivity, the phillips ionization degree, and the effective state density of the conduction band, the thermal conductivity distribution, the phillips ionization degree distribution, and the effective state density distribution characteristics of the conduction band in the active layer 103 are designed to improve the performance of the semiconductor laser, which is specifically expressed as follows:
Thermal conductivity distribution:
the thermal conductivity distribution of the active layer 103 has a function y=acos (bx+c) curve distribution;
phillips ionization degree distribution:
the philips ionization degree distribution of the active layer 103 has a function y= Dcos (ex+f) curve distribution;
Conduction band effective state density distribution:
The conduction band effective state density distribution of the active layer 103 has a function y=gcos (hx+i) curve distribution;
Wherein D is more than or equal to A is more than or equal to G.
For the active layer 103 of the present embodiment, the active layer 103 is a periodic structure formed by a well layer and a barrier layer, and there is also a certain relationship among the well layer and the barrier layer, the thermal conductivity, the phillips ionization degree, and the effective state density of the conduction band, specifically:
Thermal conductivity:
The thermal conductivity a of the well layer of the active layer 103 is equal to or less than the thermal conductivity b of the barrier layer;
Phillips ionization degree:
The Phillips ionization degree c of the well layer of the active layer 103 is equal to or greater than the Phillips ionization degree d of the barrier layer;
conduction band effective state density:
The conduction band effective state density e of the well layer of the active layer 103 is smaller than or equal to the conduction band effective state density f of the barrier layer.
In the embodiment, an In-rich cluster is added into an active layer 103 of an epitaxial structure of a gallium nitride-based semiconductor laser, and the characteristics of thermal conductivity distribution, phillips ionization degree distribution and conduction band effective state density distribution of the active layer 103 are set, so that a two-dimensional island or three-dimensional island growth mode of the active layer 103 of the laser In the growth process is inhibited, a step flow growth mode is promoted, the In-rich cluster is further inhibited from being gathered at a defect position error, the thermal stability, crystal quality, interface quality and interface roughness of the active layer 103 are improved, a non-radiative recombination center is reduced, the non-uniform broadening of a laser spectrum is reduced, the optical catastrophe of the laser is inhibited, the ageing life of the laser is prolonged, and the ageing life is prolonged from 1 kilohour to 5 kilo hours; meanwhile, the thermal mismatch and quantum confinement stark effect are reduced, the energy band inclination is reduced, the overlapping and recombination probability of electron hole wave functions is improved, the threshold current density of the laser is reduced, and the quantum efficiency is improved.
Further, in the epitaxial structure of the gallium nitride-based semiconductor laser of the present embodiment, the upper waveguide layer 104, the lower waveguide layer 102 and the upper confinement layer 105 all have the characteristics of thermal conductivity, phillips ionization degree and effective state density of conduction band, and the relationship between the characteristics of thermal conductivity, phillips ionization degree and effective state density of conduction band of the active layer 103 is as follows:
Thermal conductivity:
the upper waveguide layer 104 has a thermal conductivity n;
The thermal conductivity of the lower waveguide layer 102 is p;
The thermal conductivity of the upper confinement layer 105 is q;
the thermal conductivities of the active layer 103, the upper waveguide layer 104, the lower waveguide layer 102, and the upper confinement layer 105 have the following relationship: q is more than or equal to p is more than or equal to n is more than or equal to b is more than or equal to a;
Philips ionization degree:
The Philips ionization degree of the upper waveguide layer 104 is r;
The philips ionization degree of the lower waveguide layer 102 is s;
The philips ionization degree of the lower confinement layer 101 is t;
The philips ionization degree of the active layer 103, the upper waveguide layer 104, the lower waveguide layer 102, and the lower confinement layer 101 has the following relationship: t is more than or equal to d is more than or equal to r is more than or equal to s is more than or equal to c;
conduction band effective state density:
The effective state density of the conduction band of the upper waveguide layer 104 is u;
The effective density of states of the conduction band of lower waveguide layer 102 is v;
The upper confinement layer 105 has a conduction band effective state density w;
The conduction band effective state densities of the active layer 103, the upper waveguide layer 104, the lower waveguide layer 102, and the upper confinement layer 105 have the following relationship: and e is not less than u and not more than v and not less than w and not more than f.
The relationship among the thermal conductivity, the Phillips ionization degree and the effective state density of the conduction band of the active layer 103, the upper waveguide layer 104, the lower waveguide layer 102 and the upper limiting layer 105 is limited, so that the two-dimensional island or three-dimensional island growth mode of the active layer 103 In the growth process of the laser can be further restrained, the step flow growth mode is promoted, in clusters are further restrained from being gathered at the defect position, the thermal stability, the crystal quality, the interface quality and the interface roughness of the active layer 103 are promoted, the non-radiative recombination center is reduced, the non-uniform broadening of the laser spectrum is reduced, the optical catastrophe of the laser is restrained, the aging life of the laser is prolonged, the thermal mismatch and the quantum limiting stark effect are reduced, the energy band inclination is reduced, the overlapping and recombination probability of electron hole wave functions is improved, the threshold current density of the laser is reduced, and the quantum efficiency is improved.
Further, in this embodiment, the well layer of the active layer 103 is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN a and g.ltoreq.100 a, and the light-emitting wavelength is 200nm to 2000nm. The barrier layer of the active layer 103 is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN, and the thickness h is 10-200 m.
The lower waveguide layer 102 is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN, and the thickness is i, i is more than or equal to 10 and less than or equal to 9000;
The upper waveguide layer 104 is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN and has a thickness j of 10 Emi.ltoreq.j.ltoreq.9000 Emi.
The lower limiting layer 101 is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN and has a thickness k of 10 Emi.ltoreq.k.ltoreq.90000 Emi.
The upper limiting layer 105 is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN and has a thickness l of 10-80000 Emeter.
The substrate 100 includes any one of sapphire, silicon, ge, siC, alN, gaN, gaAs, gaSb, inSb, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, sapphire/SiN x, magnesium aluminate spinel MgAl 2O4, mgO, znO, mgO, spinel, zrB 2、LiAlO2, and LiGaO 2 composite substrate.
The following table shows the comparison of the epitaxial structure of the gallium nitride-based semiconductor laser proposed in this embodiment with the parameters of the conventional semiconductor laser:
It can be seen that the threshold current density of the epitaxial structure of the gallium nitride-based semiconductor laser of the present embodiment is reduced from 2.4kA/cm 2 to 0.67kA/cm 2, compared to the conventional semiconductor laser. The external quantum efficiency is improved from 31.50% to 46.70%. The aging life is raised from 1000 hours to 50000 hours, and it is apparent that the performance of the epitaxial structure of the gallium nitride-based semiconductor laser of the present embodiment is better than that of the conventional semiconductor laser.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present application without departing from the spirit or scope of the application. Thus, it is intended that the present application also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (10)
1. The epitaxial structure of the gallium nitride-based semiconductor laser comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top, and is characterized In that the active layer is a periodic quantum well structure which consists of a well layer and a barrier layer and is provided with In clusters, and the active layer is provided with thermal conductivity distribution, phillips ionization degree distribution and conduction band effective state density distribution characteristics.
2. The epitaxial structure of the gallium nitride-based semiconductor laser according to claim 1, wherein the number of periods of the active layer is m.ltoreq.m.ltoreq.5, and the In-rich cluster density of the active layer is 5E8cm -2 or less.
3. The epitaxial structure of a gallium nitride-based semiconductor laser according to claim 1, characterized in that the thermal conductivity profile of the active layer has a profile of function y = Acos (bx+c);
The philips ionization degree distribution of the active layer has a profile of a function y= Dcos (ex+f);
The conduction band effective state density distribution of the active layer has a curve distribution of a function y=gcos (hx+i);
Wherein D is more than or equal to A is more than or equal to G.
4. The epitaxial structure of the gallium nitride-based semiconductor laser according to claim 1, wherein a thermal conductivity a of a well layer of the active layer is equal to or less than a thermal conductivity b of a barrier layer;
The Philips ionization degree c of the well layer of the active layer is larger than or equal to the Philips ionization degree d of the barrier layer;
And the effective state density e of the conduction band of the well layer of the active layer is smaller than or equal to the effective state density f of the conduction band of the barrier layer.
5. The epitaxial structure of gallium nitride-based semiconductor laser according to claim 4, wherein the upper waveguide layer has a thermal conductivity of n, the lower waveguide layer has a thermal conductivity of p, and the upper confinement layer has a thermal conductivity of q, and the thermal conductivities of the active layer, the upper waveguide layer, the lower waveguide layer, and the upper confinement layer have the following relationship: q is more than or equal to p is more than or equal to n is more than or equal to b is more than or equal to a.
6. The epitaxial structure of claim 4, wherein the upper waveguide layer has a philips ionization degree r, the lower waveguide layer has a philips ionization degree s, the lower confinement layer has a philips ionization degree t, and the active layer, the upper waveguide layer, the lower waveguide layer, and the lower confinement layer have the following relationship: t is more than or equal to d is more than or equal to r is more than or equal to s is more than or equal to c.
7. The epitaxial structure of claim 4, wherein the upper waveguide layer has a conduction band effective state density u, the lower waveguide layer has a conduction band effective state density v, and the upper confinement layer has a conduction band effective state density w, and the active layer, the upper waveguide layer, the lower waveguide layer, and the upper confinement layer have the following relationship: and e is not less than u and not more than v and not less than w and not more than f.
8. The epitaxial structure of the gallium nitride-based semiconductor laser according to claim 1, wherein the well layer of the active layer is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN a and g is less than or equal to 100 a m, and the light-emitting wavelength is 200nm to 2000nm;
the barrier layer of the active layer is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN, and the thickness h is more than or equal to 10 and less than or equal to 200.
9. The epitaxial structure of the gallium nitride-based semiconductor laser according to claim 1, wherein the lower waveguide layer is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN a and has a thickness i of 10 a/m.ltoreq.i.ltoreq.9000 a/m;
The upper waveguide layer is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN, and the thickness j is more than or equal to 10 and less than or equal to 9000;
The lower limiting layer is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN, and the thickness is k, wherein k is more than or equal to 10 and less than or equal to 90000;
The upper limiting layer is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN, and the thickness is l, i is more than or equal to 10 and less than or equal to 80000.
10. The epitaxial structure of gallium nitride-based semiconductor laser according to claim 1, wherein the substrate comprises any one of sapphire, silicon, ge, siC, alN, gaN, gaAs, gaSb, inSb, inP, sapphire/SiO 2 composite substrate, sapphire/AlN composite substrate, sapphire/SiN x, magnesium aluminate spinel MgAl 2O4, mgO, znO, mgO, spinel, zrB 2、LiAlO2, and LiGaO 2 composite substrate.
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