CN118099942A - Semiconductor laser with quantum well of quantum finite field effect - Google Patents
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Abstract
The invention provides a semiconductor laser with quantum wells of quantum finite field effect, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer which are sequentially arranged from bottom to top, wherein the active layer is a quantum well with quantum finite field effect, and the quantum well has conduction band effective state density distribution characteristics, electron affinity energy distribution characteristics and Phillips ionization degree distribution characteristics. According to the invention, a quantum well with quantum confinement effect is formed on the active layer, carrier delocalization is inhibited, confinement effect of the active layer on electron and hole wave functions is improved, spontaneous radiation and stimulated radiation efficiency of the laser are improved, slope efficiency and confinement factor are further improved, and threshold current is reduced.
Description
Technical Field
The application relates to the field of semiconductor photoelectric devices, in particular to a semiconductor laser with quantum wells of quantum confinement effect.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The laser has various types and various classification modes, and mainly comprises solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state semiconductor ultraviolet laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like.
The laser is largely different from the nitride semiconductor light emitting diode:
1) The laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level;
2) The current density of the laser reaches KA/cm2, which is more than 2 orders of magnitude higher than that of the nitride light-emitting diode, so that stronger electron leakage, more serious Auger recombination, stronger polarization effect and more serious electron-hole mismatch are caused, and more serious efficiency attenuation drop effect is caused;
3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated;
4) The principle is different: the light emitting diode generates radiation composite luminescence by transferring electron holes to an active layer or a p-n junction under the action of external voltage, and the laser can perform lasing only when the lasing condition is satisfied, the inversion distribution of carriers in an active area is necessarily satisfied, the stimulated radiation oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss when the threshold condition is satisfied, and finally laser is output.
The nitride semiconductor ultraviolet laser has the following problems: the p-type semiconductor has the advantages that the Mg acceptor activation energy is large (more than 160 meV), the ionization efficiency is low (less than 10%), the hole concentration is far lower than the electron concentration, the hole mobility is far lower than the electron mobility, the quantum well polarization electric field promotes the hole injection barrier, the hole overflows the active layer and the like, the hole injection is uneven and the efficiency is low, the serious asymmetry mismatch of electron holes in the quantum well is caused, the electron leakage and the carrier are delocalized, the hole is more difficult to transport in the quantum well, the carrier injection is uneven, the gain is uneven, meanwhile, the gain spectrum of the laser is widened, the peak gain is reduced, the threshold current of the laser is increased, and the slope efficiency is reduced.
Disclosure of Invention
In order to solve one of the technical problems, the invention provides a semiconductor laser with quantum wells with quantum confinement effect.
The embodiment of the invention provides a semiconductor laser with a quantum well with a quantum finite field effect, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer which are sequentially arranged from bottom to top, wherein the active layer is a quantum well with the quantum finite field effect, and the quantum well with the quantum finite field effect has a conduction band effective state density distribution characteristic, an electron affinity energy distribution characteristic and a Philips ionization degree distribution characteristic.
Preferably, the effective state density of conduction band of the quantum well of the quantum finite field effect is in U-shaped distribution, and the number of the U-shaped distribution is 1 to 3.
Preferably, the electron affinity of the quantum well of the quantum confinement effect is in an inverted U-shaped distribution, and the number of the inverted U-shaped distributions is 1 to 3.
Preferably, the Philips ionization degree of the quantum well of the quantum finite field effect is in an inverted U-shaped distribution, and the number of the inverted U-shaped distributions is 1 to 3.
Preferably, the quantum well of the quantum confinement effect is a periodic structure consisting of a well layer and a barrier layer, and the period number is more than or equal to 1 and less than or equal to 3;
The well layer of the quantum well with the quantum confinement effect is any one or any combination of InGaN、InN、GaN、AlInGaN、AlN、AlGaN、AlInN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN, the thickness of the well layer is 10-200 meter, and the light-emitting wavelength is 200-2000 nm;
The barrier layer of the quantum well with the quantum confinement effect is any one or any combination of InGaN、InN、GaN、AlInGaN、AlN、AlGaN、AlInN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN and the thickness of the barrier layer is 5 to 500.
Preferably, the conduction band effective state density distribution of the well layer of the quantum confinement effect quantum well has a curve distribution of a function y=ax 2 +bx+c (a > 0);
the electron affinity energy distribution of the well layer of the quantum well of the quantum confinement effect has a curve distribution of a function y=dx 2 +ex+f (D < 0);
the Philips ionization degree distribution of the well layer of the quantum well with the quantum confinement effect has a curve distribution of a function y=Gx 2 +Hx+I (G < 0);
Wherein, D is more than or equal to G and less than 0 and less than A.
Preferably, the quantum well with the quantum confinement effect further has In/Al element proportion distribution characteristic, the In/Al element proportion of the quantum well with the quantum confinement effect is In inverted U-shaped distribution, and the number of the inverted U-shaped distributions is 1 to 3.
Preferably, the lower waveguide layer is any one or any combination of InGaN、InN、GaN、AlInGaN、AlN、AlGaN、AlInN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN, and the thickness of the lower waveguide layer is 10 to 5000 a;
the upper waveguide layer is any one or any combination of InGaN、InN、GaN、AlInGaN、AlN、AlGaN、AlInN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN, and the thickness of the upper waveguide layer is 20 to 6000.
Preferably, the upper limiting layer is any one or any combination of InGaN、InN、GaN、AlInGaN、AlN、AlGaN、AlInN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN, and the thickness of the upper limiting layer is 20 to 50000 a;
the lower limiting layer is any one or any combination of InGaN、InN、GaN、AlInGaN、AlN、AlGaN、AlInN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN, and the thickness of the lower limiting layer is 50 to 90000.
Preferably, the substrate comprises any one of sapphire, silicon, ge, siC, alN, gaN, gaAs, gaSb, inSb, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, sapphire/SiN x, magnesium aluminate spinel MgAl 2O4, mgO, znO, mgO, spinel, zrB 2、LiAlO2, and LiGaO 2 composite substrate.
The beneficial effects of the invention are as follows: the invention designs an active layer in a semiconductor laser to have a quantum well with quantum finite field effect, designs specific conduction band effective state density distribution characteristic, electron affinity energy distribution characteristic and Philips ionization degree distribution characteristic in the quantum well with quantum finite field effect, thereby forming the quantum well with quantum finite field effect in the active layer, inhibiting carrier delocalization, improving finite field effect of the active layer on electron and hole wave functions, improving spontaneous radiation and stimulated radiation efficiency of the laser, further improving slope efficiency and limiting factor and reducing threshold current.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute a limitation on the application. In the drawings:
Fig. 1 is a schematic structural diagram of a semiconductor laser with quantum wells having quantum confinement effect according to an embodiment of the present invention;
Fig. 2 is a SIMS secondary ion mass spectrum of a semiconductor laser with quantum wells having quantum confinement effect according to an embodiment of the present invention.
Reference numerals:
100. A substrate, 101, a lower confinement layer, 102, a lower waveguide layer, 103, an active layer, 104, an upper waveguide layer, 105, an electron blocking layer, 106, an upper confinement layer.
Detailed Description
In order to make the technical solutions and advantages of the embodiments of the present application more apparent, the following detailed description of exemplary embodiments of the present application is provided in conjunction with the accompanying drawings, and it is apparent that the described embodiments are only some embodiments of the present application and not exhaustive of all embodiments. It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other.
As shown in fig. 1 and 2, the present embodiment proposes a semiconductor laser with quantum wells having quantum confinement effect, which includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 disposed in this order from bottom to top, wherein the active layer 103 in the present embodiment is a quantum well having quantum confinement effect.
Specifically, in the present embodiment, the semiconductor laser having quantum wells of quantum confinement effect is provided with a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 in this order from bottom to top. The active layer 103 is a quantum well structure, and the quantum well has a quantum confinement effect, that is, the active layer 103 in the present embodiment is a quantum well having a quantum confinement effect. In the quantum well of the quantum confinement effect, the present embodiment specifically designs some performance distributions inside the quantum well, including a conduction band effective state density distribution, an electron affinity distribution, and a philips ionization degree distribution.
Conduction band effective state density is an important concept in semiconductor physics, representing the energy state of electrons. The conduction band is the lowest unoccupied energy band. In semiconductors, electrons can transition from the valence band to the conduction band, forming a current. The effective density is very important for the electrical properties of semiconductors. In the conduction band, the effective state density of electrons is low because the conduction band is the occupied band in which there are few electrons.
Electron affinity, also known as electron affinity, is the energy of the affinity between electrons. The electron affinity energy is the energy released by the gaseous atoms in the ground state from electrons to gaseous anions. The electron affinity of an element can reflect the difficulty of an atom of the element to obtain electrons. The larger the value of the first electron affinity of an element atom, the more energy that is released when a gaseous atom of one ground state of the element gets an electron to form a-1 valent gaseous anion, the greater the tendency of the element atom to get an electron, and the stronger the nonmetallic nature of the element. The size of electron affinity depends on the effective nuclear charge of the atom, the atomic radius and the atomic electron configuration. The larger the effective nuclear charge, the smaller the atomic radius, the larger the electron attractive force is checked, the more energy is released after the electrons are combined, and the larger the electron affinity is. The outer electron configuration of the atoms is in a half-full state and a full-full state, the system is stable, the electron combination is relatively difficult, the energy is sometimes not released, the energy is absorbed, and the electron affinity energy is even negative. When negative monovalent ions reacquire electrons, repulsive forces between negative charges are overcome and energy is absorbed.
Philips ionization degree (Philips ionicity) is one of the basic physical parameters of GaN materials, which characterizes the ionization degree characteristics and the electrical characteristics of the materials. Specific related concepts of Phillips ionization degree are described in more detail in "J.A.VanVechten.Quantum Dielectric Theory ofElectronegativity in CovalentSyst ems.III.Pressure-Temperature Phase Diagrams,Heats ofMixing,andDistribution Co efficients[J].Phys.Rev.B,1973,7:1479-1507.".
Based on the characteristics of the effective state density of the conduction band, the electron affinity and the philips ionization degree, the design of the effective state density distribution, the electron affinity distribution and the philips ionization degree distribution of the conduction band in the quantum well with the quantum confinement effect is specifically as follows:
(1) Conduction band effective state density distribution
The effective state density of the conduction band of the quantum well of the quantum finite field effect is distributed in a U shape, and the number of the U-shaped distributions is 1 to 3;
(2) Electron affinity energy distribution
The electron affinity of the quantum well of the quantum confinement effect is in inverted U-shaped distribution, and the number of the inverted U-shaped distribution is 1 to 3;
(3) Philips ionization degree distribution
The Philips ionization degree of the quantum well of the quantum finite field effect is distributed in an inverted U shape, and the number of the inverted U-shaped distributions is 1 to 3.
The active layer 103 in the semiconductor laser is designed to have a quantum well with quantum confinement effect, and specific conduction band effective state density distribution characteristic, electron affinity energy distribution characteristic and Phillips ionization degree distribution characteristic are designed in the quantum well with quantum confinement effect, so that the quantum well with quantum confinement effect is formed in the active layer 103, carrier delocalization is inhibited, confinement effect of the active layer 103 on electron and hole wave functions is improved, spontaneous radiation and stimulated radiation efficiency of the laser are improved, slope efficiency and confinement factor are further improved, and threshold current is reduced.
Further, in this embodiment, the quantum well of the quantum confinement effect is a periodic structure composed of a well layer and a barrier layer, and the number of periods is 1-3.
The quantum well has any one or any combination of InGaN、InN、GaN、AlInGaN、AlN、AlGaN、AlInN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN of well layers with thickness of 10-200A/m and light-emitting wavelength of 200-2000 nm.
The barrier layer of the quantum well of the quantum confinement effect is any one or any combination of InGaN、InN、GaN、AlInGaN、AlN、AlGaN、AlInN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN and the thickness of the barrier layer is 5 to 500.
In this embodiment, the effective state density distribution of conduction band, electron affinity distribution and philips ionization degree distribution in the well layer of the quantum well of the quantum confinement effect are specifically expressed as:
(1) Conduction band effective state density distribution
The conduction band effective state density distribution of the well layer of the quantum finite field effect quantum well has a curve distribution of a function y=ax 2 +bx+c (A > 0);
(2) Electron affinity energy distribution
The electron affinity distribution of the well layer of the quantum well of the quantum confinement effect has a curve distribution of a function y=dx 2 +ex+f (D < 0);
(3) Philips ionization degree distribution
The philips ionization profile of the well layer of the quantum confinement effect quantum well has a profile of the function y=gx 2 +hx+i (G < 0);
Wherein, D is more than or equal to G and less than 0 and less than A.
Meanwhile, the quantum well of the quantum confinement effect In the embodiment also has In/Al element proportion distribution characteristics, and the specific expression is as follows:
The In/Al element proportion of the quantum well of the quantum confinement effect is In inverted U-shaped distribution, and the number of the inverted U-shaped distribution is 1 to 3.
According to the embodiment, through designing the In/Al element proportion distribution characteristic In the quantum finite field effect quantum well, carriers can be further restrained from being delocalized, the finite field effect of the active layer 103 on electron and hole wave functions is improved, the spontaneous radiation and stimulated radiation efficiency of the laser is improved, and then the slope efficiency and limiting factor are improved, and the threshold current is reduced.
Further, the lower waveguide layer 102 is any one or any combination of InGaN、InN、GaN、AlInGaN、AlN、AlGaN、AlInN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN, and the thickness of the lower waveguide layer 102 is 10 to 5000 a.
The upper waveguide layer 104 is any one or any combination of InGaN、InN、GaN、AlInGaN、AlN、AlGaN、AlInN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN, and the thickness of the upper waveguide layer 104 is 20 to 6000 a.
The upper confinement layer 106 is any one or any combination of InGaN、InN、GaN、AlInGaN、AlN、AlGaN、AlInN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN and the upper confinement layer 106 has a thickness of 20 to 50000 angstroms.
The lower confinement layer 101 is any one or any combination of InGaN、InN、GaN、AlInGaN、AlN、AlGaN、AlInN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN, and the thickness of the lower confinement layer 101 is 50 to 90000 angstroms.
The substrate 100 includes any one of sapphire, silicon, ge, siC, alN, gaN, gaAs, gaSb, inSb, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, sapphire/SiN x, magnesium aluminate spinel MgAl 2O4, mgO, znO, mgO, spinel, zrB 2、LiAlO2, and LiGaO 2 composite substrate.
The following table shows the parameter comparison between the semiconductor laser with quantum well of quantum finite field effect and the conventional semiconductor laser according to the present embodiment:
It can be seen that compared with the conventional semiconductor laser, the slope efficiency of the semiconductor laser with quantum well of quantum confinement effect of the present embodiment is improved from 0.43 to 1.53, which is improved by 256%; the limiting factor is increased from 1.40% to 3.97%, and 184% is increased; the threshold current density was reduced from 3.6 to 0.64 by 82%. Obviously, the performance of the semiconductor laser with quantum well with quantum confinement effect of the present embodiment is better than that of the conventional semiconductor laser.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present application without departing from the spirit or scope of the application. Thus, it is intended that the present application also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (10)
1. The semiconductor laser with the quantum well with the quantum finite field effect comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer which are sequentially arranged from bottom to top, and is characterized in that the active layer is a quantum well with the quantum finite field effect, and the quantum well with the quantum finite field effect has a conduction band effective state density distribution characteristic, an electron affinity energy distribution characteristic and a Phillips ionization degree distribution characteristic.
2. The semiconductor laser with quantum confinement effect quantum well of claim 1, wherein the quantum confinement effect quantum well has a U-shaped distribution of conduction band effective state density and the number of U-shaped distributions is 1 to 3.
3. The semiconductor laser with quantum confinement effect quantum well of claim 1, wherein the electron affinity of the quantum confinement effect quantum well is in an inverted U-shaped distribution and the number of the inverted U-shaped distributions is 1 to 3.
4. The semiconductor laser with quantum confinement effect quantum well of claim 1, wherein the philips ionization degree of the quantum confinement effect quantum well is in an inverted U-shaped distribution, and the number of the inverted U-shaped distributions is 1 to 3.
5. The semiconductor laser with quantum well of claim 1, wherein the quantum well is a periodic structure consisting of a well layer and a barrier layer, and the number of periods is 1-3;
The well layer of the quantum well with the quantum confinement effect is any one or any combination of InGaN、InN、GaN、AlInGaN、AlN、AlGaN、AlInN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN, the thickness of the well layer is 10-200 meter, and the light-emitting wavelength is 200-2000 nm;
The barrier layer of the quantum well with the quantum confinement effect is any one or any combination of InGaN、InN、GaN、AlInGaN、AlN、AlGaN、AlInN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN and the thickness of the barrier layer is 5 to 500.
6. The semiconductor laser with quantum confinement effect quantum well of claim 5, wherein the conduction band effective state density profile of the well layer of the quantum confinement effect quantum well has a profile of a function y = Ax 2 + Bx + c (a > 0);
the electron affinity energy distribution of the well layer of the quantum well of the quantum confinement effect has a curve distribution of a function y=dx 2 +ex+f (D < 0);
the Philips ionization degree distribution of the well layer of the quantum well with the quantum confinement effect has a curve distribution of a function y=Gx 2 +Hx+I (G < 0);
Wherein, D is more than or equal to G and less than 0 and less than A.
7. The semiconductor laser with quantum well of claim 1, wherein the quantum well further has In/Al element ratio distribution characteristics, the In/Al element ratio of the quantum well is In an inverted U-shaped distribution, and the number of the inverted U-shaped distributions is 1 to 3.
8. The semiconductor laser with quantum confinement effect quantum well of claim 1, wherein the lower waveguide layer is any one or any combination of InGaN、InN、GaN、AlInGaN、AlN、AlGaN、AlInN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN a, the thickness of the lower waveguide layer is 10 to 5000 a;
the upper waveguide layer is any one or any combination of InGaN、InN、GaN、AlInGaN、AlN、AlGaN、AlInN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN, and the thickness of the upper waveguide layer is 20 to 6000.
9. The semiconductor laser with quantum confinement effect quantum well of claim 1, wherein the upper confinement layer is any one or any combination of InGaN、InN、GaN、AlInGaN、AlN、AlGaN、AlInN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN a, the upper confinement layer having a thickness of 20 to 50000 a;
the lower limiting layer is any one or any combination of InGaN、InN、GaN、AlInGaN、AlN、AlGaN、AlInN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga2O3、BN, and the thickness of the lower limiting layer is 50 to 90000.
10. The semiconductor laser with quantum confinement effect quantum well of claim 1, wherein the substrate comprises any one of sapphire, silicon, ge, siC, alN, gaN, gaAs, gaSb, inSb, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, sapphire/SiN x, magnesium aluminate spinel MgAl 2O4, mgO, znO, mgO, spinel, zrB 2、LiAlO2, and LiGaO 2 composite substrate.
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