CN117175352A - Semiconductor laser element - Google Patents
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- CN117175352A CN117175352A CN202311121065.7A CN202311121065A CN117175352A CN 117175352 A CN117175352 A CN 117175352A CN 202311121065 A CN202311121065 A CN 202311121065A CN 117175352 A CN117175352 A CN 117175352A
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Abstract
The application provides a semiconductor laser element, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer and an upper limiting layer which are sequentially arranged from bottom to top, wherein an upper waveguide layer for eliminating a mode hopping effect is arranged between the active layer and the upper limiting layer, and the upper waveguide layer for eliminating the mode hopping effect has Phillips ionization degree, electron mobility and thermal conductivity characteristics. The application can inhibit and eliminate the trapping effect and the edge effect of the waveguide layer on the mode jump effect, reduce the deep energy level defect, regulate and control the symmetry break of the laser away from the equilibrium state, and eliminate the mode jump mutation phenomena such as junction voltage jump, conductance jump, capacitance dip and the like.
Description
Technical Field
The application relates to the field of semiconductor photoelectric devices, in particular to a semiconductor laser element.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The laser has various types and various classification modes, and mainly comprises solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state semiconductor laser element has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like.
The laser is largely different from the nitride semiconductor light emitting diode:
1) The laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level;
2) Use of lasers current densities up to KA/cm 2 More than 2 orders of magnitude higher than nitride light emitting diodes, thereby causing stronger electron leakage, more severe auger recombination, stronger polarization effect, more severe electron-hole mismatch, resulting in more severe efficiency decay Droop effect;
3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated;
4) The principle is different: the light emitting diode generates radiation composite luminescence by transferring electron holes to an active layer or a p-n junction under the action of external voltage, and the laser can perform lasing only when the lasing condition is satisfied, the inversion distribution of carriers in an active area is necessarily satisfied, the stimulated radiation oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss when the threshold condition is satisfied, and finally laser is output.
The nitride semiconductor laser element has the following problems: according to the laser theory, after the laser emits stable laser light and is saturated, quasi-fermi energy levels of holes and electrons are pinned, stimulated radiation is dominant, injected carriers are completely converted into photon output, carrier concentration reaches saturation, optical gain reaches saturation, junction voltage also reaches saturation, and carrier concentration in a cavity does not change along with current. The laser is far away from symmetry break corresponding to equilibrium phase transition, so that discontinuous or abrupt change phenomenon of the laser occurs at the threshold, such as problems of conductivity jump, capacitance dip, junction voltage jump, series resistance dip, ideal factor jump and the like. The discontinuity is mainly affected by factors such as trapping effect, surface condition, edge effect, deep level trap, insulating interface layer and series resistance of the depletion region.
Disclosure of Invention
In order to solve one of the above technical problems, the present application provides a semiconductor laser device.
The embodiment of the application provides a semiconductor laser element, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer and an upper limiting layer which are sequentially arranged from bottom to top, wherein an upper waveguide layer for eliminating the mode hopping effect is arranged between the active layer and the upper limiting layer, and the upper waveguide layer for eliminating the mode hopping effect has the characteristics of Phillips ionization degree, electron mobility and thermal conductivity.
Preferably, the Phillips ionization degree of the waveguide layer on the mode-hop eliminating effect is distributed in an arc shape.
Preferably, the Phillips ionization degree distribution of the waveguide layer on the mode-hop cancellation effect has a function y=log a x (a > 1) profile.
Preferably, the electron mobility of the waveguide layer on the mode-hopping cancellation effect is distributed in an arc shape.
Preferably, the electron mobility profile of the waveguide layer on the mode-hop cancellation effect has a function y=log b x (b > 1) profile.
Preferably, the thermal conductivity of the waveguide layer on the mode-hopping elimination effect is distributed in an arc shape.
Preferably, the thermal conductivity profile of the waveguide layer on the mode-hop cancellation effect has a function y=log c x (0 < c < 1) curve distribution.
Preferably, the function base of the Phillips ionization degree distribution, the electron mobility distribution and the thermal conductivity distribution of the waveguide layer on the mode-hopping elimination effect has the following relationship: c is more than 0 and less than 1, b is more than or equal to a.
Preferably, the In element proportion and the Al element proportion of the waveguide layer on the mode-hopping elimination effect are distributed In an arc shape.
Preferably, the upper waveguide layer for eliminating the mode-hopping effect is GaN, inGaN, inN, alInN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 BN, and the thickness is 10 to 50000 a m.
Preferably, the active layer is a periodic structure formed by a well layer and a barrier layer, and the period is m is more than or equal to 1 and less than or equal to 3; the well layer of the active layer is GaN, inGaN, inN, alInN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 The thickness of the BN is p, p is more than or equal to 5 and less than or equal to 100, and the luminous wavelength is 200nm to 2000nm; the barrier layer of the active layer is GaN, inGaN, inN, alInN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 The thickness q of any one or any combination of BN and diamond is more than or equal to 10 and less than or equal to 200;
the lower waveguide layer is GaN, inGaN, inN, alInN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 The thickness of any one or any combination of BN and diamond is x, x is more than or equal to 10 and less than or equal to 50000;
the upper limiting layer is GaN, inGaN, inN, alInN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 The thickness of y is more than or equal to 10 and less than or equal to 80000 meters;
the lower limiting layer is GaN, inGaN, inN, alInN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 The thickness of any one or any combination of BN and diamond is z which is more than or equal to 10 and less than or equal to 90000 meters;
the substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, cu, W, mo, tiW, gaSb, inSb, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 MgO, znO, mgO, spinel, zrB 2 Diamond, liAlO 2 And LiGaO 2 Any one of the composite substrates.
The beneficial effects of the application are as follows: the application sets the upper waveguide layer for eliminating the mode jump effect between the active layer and the upper limiting layer of the semiconductor laser element, and designs Phillips ionization degree, electron mobility and heat conductivity characteristics in the upper waveguide layer for eliminating the mode jump effect, thereby inhibiting the trapping effect and edge effect of the upper waveguide layer for eliminating the mode jump effect, reducing the deep energy level defect, regulating and controlling the symmetry defect of the laser far away from the equilibrium state, and eliminating the mode jump phenomena such as junction voltage jump, electric conduction jump and electric capacity sinking.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute a limitation on the application. In the drawings:
fig. 1 is a schematic structural diagram of a semiconductor laser device according to an embodiment of the present application;
fig. 2 is a SIMS secondary ion mass spectrum of a semiconductor laser device according to an embodiment of the present application.
Reference numerals:
100. a substrate 101, a lower confinement layer 102, a lower waveguide layer 103, an active layer 104, an upper waveguide layer eliminating the mode-hopping effect 105, and an upper confinement layer.
Detailed Description
In order to make the technical solutions and advantages of the embodiments of the present application more apparent, the following detailed description of exemplary embodiments of the present application is provided in conjunction with the accompanying drawings, and it is apparent that the described embodiments are only some embodiments of the present application and not exhaustive of all embodiments. It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other.
As shown in fig. 1 and 2, the present embodiment proposes a semiconductor laser element including a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, and an upper confinement layer 105, which are disposed in this order from bottom to top. Wherein an upper waveguide layer 104 for eliminating the mode-hopping effect is provided between the active layer 103 and the upper confinement layer 105.
Specifically, in the present embodiment, the semiconductor laser element is provided with the substrate 100, the lower confinement layer 101, the lower waveguide layer 102, the active layer 103, and the upper confinement layer 105 in this order from bottom to top. An upper waveguide layer is provided between the active layer 103 and the upper confinement layer 105. The upper waveguide layer has the effect of eliminating the mode-hopping effect, namely, the upper waveguide layer 104 eliminates the mode-hopping effect. The mode-hopping-effect-eliminating upper waveguide layer 104 is designed with phillips ionization degree, electron mobility, and thermal conductivity characteristics in the mode-hopping-effect-eliminating upper waveguide layer 104 in order to enable the mode hopping effect to be eliminated.
Philips ionization degree (Philips ionicity) is one of the basic physical parameters of GaN materials, which characterizes the ionization degree characteristics and the electronic characteristic parameters of the materials. Specific relevant concepts for Phillips ionization degree are described in more detail in "J.A. Van Vechten. Quantum Dielectric Theory ofElectronegativity in Covalent systems.III.pressure-Temperature Phase Diagrams, heats of Mixing, and Distribution Coefficients [ J ]. Phys. Rev. B,1973,7:1479-1507 ].
Electron mobility is an important physical parameter used to describe the ability of electrons in a solid to migrate under an applied electric field. The method reflects the characteristic of electronic conductivity in the material and has important significance for the design and performance optimization of electronic devices. The electron mobility directly affects the conductivity of the material and the performance of the electronic device. Materials with high electron mobility are better able to conduct current and are therefore widely used in electronic devices for conducting layers, electrodes, etc. High electron mobility means that electrons move more easily in the material, thereby reducing the generation of electrical resistance. In an optoelectronic device, the level of electron mobility determines the response speed of a material to an optical signal. The high mobility material can more quickly convert photoelectric energy into a current or voltage signal, thereby improving the response speed and efficiency of the photoelectric device. In an optoelectronic device, the level of electron mobility determines the response speed of a material to an optical signal. The high mobility material can more quickly convert photoelectric energy into a current or voltage signal, thereby improving the response speed and efficiency of the photoelectric device. By selecting materials with high mobility and optimizing device structure, performance and efficiency of the electronic device can be improved.
Thermal conductivity, also known as thermal conductivity, reflects the thermal conductivity of a substance, which is defined by the fourier law (see thermal conduction) as the amount of heat transferred per unit of time per unit of thermal conduction surface per unit of temperature gradient (1K temperature decrease over a length of 1 m). The object with high heat conductivity is an excellent heat conductor; while the thermal conductivity is small is a poor conductor of heat or a thermal insulator. The thermal conductivity is affected by temperature and increases slightly with increasing temperature. If the temperature difference between the parts of the material is not very large, the thermal conductivity is practically constant for the whole material. When the crystal cools, its thermal conductivity increases very rapidly.
Based on the characteristics of Phillips ionization degree, electron mobility and thermal conductivity, the distribution characteristics of Phillips ionization degree, electron mobility and thermal conductivity are designed on the basis, and the specific expression is as follows:
phillips ionization degree:
the Phillips ionization degree of the upper waveguide layer 104 is arcuately distributed and may be embodied as having a function y=log a x (a > 1) profile.
Electron mobility:
the electron mobility of the waveguide layer 104 on the mode-hop cancellation effect is arcuately distributed and may be embodied as having a function y=log b x (b > 1) profile.
Thermal conductivity:
the thermal conductivity of the upper waveguide layer 104 is arcuately distributed, and may be embodied as having a function y=log c x (0 < c < 1) curve distribution.
Wherein, the function base of Phillips ionization degree distribution, electron mobility distribution and thermal conductivity distribution of the waveguide layer on the elimination mode hopping effect has the following relation: c is more than 0 and less than 1, b is more than or equal to a. In addition, in element proportion and Al element proportion of the waveguide layer 104 on the mode-hop effect elimination of the present embodiment are also distributed In an arc shape, in addition to the above-described distribution characteristics of phillips ionization degree, electron mobility, and thermal conductivity.
The present embodiment is achieved by providing the mode-hopping-elimination upper waveguide layer 104 between the active layer 103 and the upper confinement layer 105 of the semiconductor laser element, and designing phillips ionization degree, electron mobility, and thermal conductivity characteristics in the mode-hopping-elimination upper waveguide layer 104. Wherein, the distribution characteristics of Phillips ionization degree, electron mobility and thermal conductivity are all distributed in arc shape, thus inhibiting and eliminating the trapping effect and edge effect of the upper waveguide layer 104 of the mode jump effect, reducing the deep energy level defect, regulating and controlling the symmetry defect of the laser far away from the equilibrium state, and eliminating the mode jump mutation phenomena such as junction voltage jump, conductivity jump and capacitance sinking.
Further, the upper waveguide layer 104 with mode-hopping cancellation effect is GaN, inGaN, inN, alInN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 BN, and the thickness is 10 to 50000 a m.
Further, in this embodiment, the active layer 103 has a periodic structure composed of a well layer and a barrier layer, and the period is m 1-3; the well layer of the active layer 103 is GaN, inGaN, inN, alInN, alInGaN, alN, gaAs, gaP,InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga 2 O 3 The thickness of the BN is p, p is more than or equal to 5 and less than or equal to 100, and the luminous wavelength is 200nm to 2000nm; the barrier layer of the active layer 103 is GaN, inGaN, inN, alInN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 The thickness q of any one or any combination of BN and diamond is more than or equal to 10 and less than or equal to 200;
the lower waveguide layer 102 is GaN, inGaN, inN, alInN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 The thickness of any one or any combination of BN and diamond is x, x is more than or equal to 10 and less than or equal to 50000;
the upper confinement layer 105 is GaN, inGaN, inN, alInN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 The thickness of y is more than or equal to 10 and less than or equal to 80000 meters;
the lower confinement layer 101 is GaN, inGaN, inN, alInN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 The thickness of any one or any combination of BN and diamond is z which is more than or equal to 10 and less than or equal to 90000 meters;
the substrate 100 includes sapphire, silicon, ge, siC, alN, gaN, gaAs, cu, W, mo, tiW, gaSb, inSb, inP, sapphire/SiO 2 Composite substrate 100, sapphire/AlN composite substrate 100, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 MgO, znO, mgO, spinel, zrB 2 Diamond, liAlO 2 And LiGaO 2 Any of the composite substrates 100.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present application without departing from the spirit or scope of the application. Thus, it is intended that the present application also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (10)
1. The semiconductor laser element comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer and an upper limiting layer which are sequentially arranged from bottom to top, and is characterized in that an upper waveguide layer for eliminating the mode hopping effect is arranged between the active layer and the upper limiting layer, and the upper waveguide layer for eliminating the mode hopping effect has Phillips ionization degree, electron mobility and thermal conductivity characteristics.
2. The semiconductor laser device as claimed in claim 1, wherein the phillips ionization degree of the waveguide layer on the mode-hop cancellation effect is distributed in an arc shape.
3. The semiconductor laser device as claimed in claim 2, wherein the phillips ionization degree distribution of the waveguide layer on the mode-hop cancellation effect has a function y=log a x (a > 1) profile.
4. A semiconductor laser device as claimed in claim 3, wherein the electron mobility of the waveguide layer is distributed in an arc shape in response to the mode-hopping cancellation effect.
5. The semiconductor laser device as claimed in claim 4, wherein the electron mobility profile of the waveguide layer on the mode-hop cancellation effect has a function y = log b x (b > 1) profile.
6. A semiconductor laser device as claimed in claim 5, wherein the thermal conductivity of the waveguide layer is arcuately distributed in response to the mode-hopping cancellation effect.
7. A semiconductor laser device as claimed in claim 6, wherein the thermal conductivity profile of the waveguide layer on the mode-hop cancellation effect has a function y = log c x (0 < c < 1) curve distribution.
8. The semiconductor laser device as claimed in claim 7, wherein the function base of the phillips ionization degree distribution, the electron mobility distribution, and the thermal conductivity distribution of the waveguide layer on the mode-hop cancellation effect has the following relationship: c is more than 0 and less than 1, b is more than or equal to a.
9. The semiconductor laser device according to claim 1, wherein the In element proportion and the Al element proportion of the waveguide layer on the mode-jump cancellation effect are each distributed In an arc shape.
10. The semiconductor laser device as claimed in claim 1, wherein the mode-hop-eliminating upper waveguide layer is GaN, inGaN, inN, alInN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 BN, 10 to 50000 a m thick;
the active layer is a periodic structure formed by a well layer and a barrier layer, and the period is m is more than or equal to 1 and less than or equal to 3; the well layer of the active layer is GaN, inGaN, inN, alInN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 The thickness of the BN is p, p is more than or equal to 5 and less than or equal to 100, and the luminous wavelength is 200nm to 2000nm; the barrier layer of the active layer is GaN, inGaN, inN, alInN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga 2 O 3 The thickness q of any one or any combination of BN and diamond is more than or equal to 10 and less than or equal to 200;
the lower waveguide layer is GaN, inGaN, inN, alInN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 The thickness of any one or any combination of BN and diamond is x, x is more than or equal to 10 and less than or equal to 50000;
the upper limiting layer is GaN, inGaN, inN, alInN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 The thickness of y is more than or equal to 10 and less than or equal to 80000 meters;
the lower limiting layer is GaN, inGaN, inN, alInN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 The thickness of any one or any combination of BN and diamond is z which is more than or equal to 10 and less than or equal to 90000 meters;
the substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, cu, W, mo, tiW, gaSb, inSb, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 MgO, znO, mgO, spinel, zrB 2 Diamond, liAlO 2 And LiGaO 2 Any one of the composite substrates.
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| CN202311121065.7A CN117175352A (en) | 2023-09-01 | 2023-09-01 | Semiconductor laser element |
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| CN202311121065.7A Pending CN117175352A (en) | 2023-09-01 | 2023-09-01 | Semiconductor laser element |
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| CN1532590A (en) * | 2003-03-24 | 2004-09-29 | 伊斯曼柯达公司 | Electric imaging system using organic laser matrix radiation area light valve |
| US20060153253A1 (en) * | 2002-12-20 | 2006-07-13 | Technologies Limited | Frequency setting of a multisection laser diode taking into account thermal effects |
| CN1838492A (en) * | 2006-04-24 | 2006-09-27 | 何建军 | Q-modulation semiconductor laser |
| CN101034788A (en) * | 2006-03-09 | 2007-09-12 | 南京大学 | Method and device for making the semiconductor laser based on reconstruction-equivalent chirp technology |
| CA3004645A1 (en) * | 2017-05-17 | 2018-11-17 | National Research Council Of Canada | Speckle reduced broadband visible quantum dot lasers |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060153253A1 (en) * | 2002-12-20 | 2006-07-13 | Technologies Limited | Frequency setting of a multisection laser diode taking into account thermal effects |
| CN1532590A (en) * | 2003-03-24 | 2004-09-29 | 伊斯曼柯达公司 | Electric imaging system using organic laser matrix radiation area light valve |
| CN101034788A (en) * | 2006-03-09 | 2007-09-12 | 南京大学 | Method and device for making the semiconductor laser based on reconstruction-equivalent chirp technology |
| CN1838492A (en) * | 2006-04-24 | 2006-09-27 | 何建军 | Q-modulation semiconductor laser |
| CA3004645A1 (en) * | 2017-05-17 | 2018-11-17 | National Research Council Of Canada | Speckle reduced broadband visible quantum dot lasers |
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