CN117856041A - Semiconductor laser chip with phonon topology quantum state and photon topology edge state layers - Google Patents
Semiconductor laser chip with phonon topology quantum state and photon topology edge state layers Download PDFInfo
- Publication number
- CN117856041A CN117856041A CN202311779734.XA CN202311779734A CN117856041A CN 117856041 A CN117856041 A CN 117856041A CN 202311779734 A CN202311779734 A CN 202311779734A CN 117856041 A CN117856041 A CN 117856041A
- Authority
- CN
- China
- Prior art keywords
- topology
- photon
- layer
- phonon
- state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000009826 distribution Methods 0.000 claims description 44
- 229910052594 sapphire Inorganic materials 0.000 claims description 15
- 239000010980 sapphire Substances 0.000 claims description 15
- 239000002131 composite material Substances 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 8
- 229910004205 SiNX Inorganic materials 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 229910010093 LiAlO Inorganic materials 0.000 claims description 3
- 229910020068 MgAl Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052596 spinel Inorganic materials 0.000 claims description 3
- 239000011029 spinel Substances 0.000 claims description 3
- 230000008859 change Effects 0.000 abstract description 6
- 239000012535 impurity Substances 0.000 abstract description 6
- 230000009191 jumping Effects 0.000 abstract 1
- 238000005457 optimization Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 239000000370 acceptor Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000001819 mass spectrum Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005472 transition radiation Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a semiconductor laser chip with phonon topology quantum state and photon topology edge state layers, and relates to the technical field of semiconductor photoelectric devices. The semiconductor laser chip comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially connected from bottom to top, and is characterized in that a phonon topology quantum state and a photon topology edge state layer are arranged between the upper waveguide layer and the upper limiting layer; according to the semiconductor laser chip, the phonon topology quantum state and the photon topology edge state layer are additionally arranged between the upper waveguide layer and the upper limiting layer, so that surface electrons in the laser are not scattered by impurities, photon topology edge states in adiabatic transportation are generated, the surface states and the edge states have extremely low series resistance, voltage rise after laser irradiation can be reduced, the problem of abrupt change of series resistance sinking and junction voltage jumping is solved, the stability of the laser chip in use is enhanced, and the laser chip is not easy to damage.
Description
Technical Field
The invention belongs to the technical field of semiconductor photoelectric devices, and particularly relates to a semiconductor laser chip with phonon topology quantum state and photon topology edge state layers.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The laser has various types, such as solid, gas, liquid, semiconductor, dye and the like, and compared with other types of lasers, the all-solid-state semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like, and has larger difference with nitride semiconductor light-emitting diodes: 1) The laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level; 2) Use of lasers current densities up to KA/cm 2 More than 2 orders of magnitude higher than nitride light emitting diodes, thereby causing stronger electron leakage, more severe auger recombination, stronger polarization effect, more severe electron-hole mismatch, resulting in more severe efficiency decay Droop effect; 3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated; 4) The principle is different: the light emitting diode generates radiation composite luminescence by electron hole transition to a quantum well or a p-n junction under the action of external voltage, and the laser can be excited only when the excitation condition is satisfied, and the inversion distribution of carriers in an active area is necessarily satisfied, and stimulated radiation light is in resonanceThe vibration cavity oscillates back and forth, the propagation in the gain medium amplifies the light, the threshold condition is met to make the gain larger than the loss, and finally the laser is output.
The nitride semiconductor laser has the following problems: 1) After the laser is excited, the carrier concentration of the active region of the multiple quantum well is saturated, the bipolar conductivity effect is weakened, the series resistance of the laser is increased, the voltage of the laser is increased, and the excessive voltage of the laser can cause burning of a device to influence the use of the laser; 2) The multi-quantum well laser has the discontinuous or abrupt change phenomenon at the threshold value, such as the problems of conductivity jump, capacitance dip, junction voltage jump, series resistance dip, ideal factor jump and the like, and is actually a symmetry break corresponding to the phase change of a far-away equilibrium state, and the factors of the trapping effect, the surface condition, the edge effect, the deep energy level trap, the insulating interface layer, the series resistance and the like of a depletion region all influence the discontinuous phenomenon at the threshold value, and the phenomenon seriously influences the power and the efficiency of the laser, so that the stability of the laser is reduced, and the service life of the laser is shortened; 3) The optical waveguide has high absorption loss, intrinsic carbon impurities compensate acceptors in a p-type semiconductor, damage p-type and the like, the ionization rate of the p-type doping is low, a large amount of unionized Mg acceptor impurities can cause the increase of internal optical loss, the refractive index dispersion of the laser is influenced by high-concentration carrier concentration fluctuation, the refractive index of an active layer is influenced by high-concentration carrier concentration fluctuation, a limiting factor is reduced along with the increase of wavelength, the mode gain of the laser is reduced, the light absorption loss is too high, the energy of light is gradually weakened, and the transmission quality and the transmission distance of an optical signal are easily influenced.
Disclosure of Invention
The invention aims to solve the problems and provide a semiconductor laser chip with simple structure and reasonable design.
The invention realizes the above purpose through the following technical scheme:
the semiconductor laser chip with the phonon topology quantum state and photon topology edge state layers comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially connected from bottom to top.
As a further optimization scheme of the invention, the phonon topology quantum state and photon topology edge state layers are provided with specific dielectric constant distribution, refractive index coefficient distribution and elastic coefficient distribution.
As a further optimization of the invention, the dielectric constant distribution of the phonon topological quantum state and photon topological edge state layers has the function y=e x Cosx profile;
the refractive index coefficient distribution of the phonon topology quantum state and photon topology edge state layer has a function y=e x +sinx curve distribution;
the elastic coefficient distribution of the phonon topology quantum state and photon topology edge state layer has a function y=e x +cosx curve distribution.
As a further optimization scheme of the invention, the phonon topological quantum state and photon topological edge state layers have specific Al/C element proportion distribution and In/C element proportion distribution.
As a further optimization of the invention, the Al/C element proportion distribution of the phonon topological quantum state and photon topological edge state layers has a function y=e x A sinx curve distribution;
the In/C element proportion distribution of the phonon topology quantum state and photon topology edge state layers has a function of y=x 2 A sinx curve distribution.
As a further optimization scheme of the invention, the phonon topology quantum state and photon topology edge state layers are InGaN, gaN, alGaN, alInN, alInGaN, alN, inN, BN, ga 2 O 3 The thickness of the phonon topological quantum state and photon topological edge state layers is 5-5000 angstroms.
As a further optimization scheme of the invention, the lower limiting layer and the upper limiting layer are any one or any combination of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, and the thickness of the lower limiting layer and the upper limiting layer is 10-80000A m.
As a further optimization scheme of the invention, the lower waveguide layer and the upper waveguide layer are any one or any combination of GaN, inGaN, alInGaN, alInN, inN, and the thicknesses of the lower waveguide layer and the upper waveguide layer are 5-20000 angstroms.
As a further optimization scheme of the invention, the light-emitting wavelength of the active layer is 200-420 nm, and the active layer is a periodic structure consisting of a well layer and a barrier layer;
the well layer is any one or any combination of InGaN, inN, alInN, gaN, alGaN, alInGaN, alN, and the thickness of the well layer is 10-100 angstroms;
the barrier layer is any one or any combination of GaN, alGaN, alInGaN, alN, alInN, and the thickness of the barrier layer is 10-200 angstroms.
As a further optimization scheme of the invention, the substrate is sapphire, silicon, ge, siC, alN, gaN, gaAs, inP or sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiNx, sapphire/SiO 2 SiNx composite substrate and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
The invention has the beneficial effects that: according to the invention, the phonon topology quantum state and photon topology edge state layer is additionally arranged between the upper waveguide layer and the upper limiting layer, so that surface electrons in the laser are not scattered by impurities, photon topology edge states in adiabatic transportation are generated, the surface states and the edge states have extremely low series resistance, the voltage rise after the laser is excited can be reduced, the problems of sinking of the series resistance and abrupt change of junction voltage jump are solved, the stability of the laser chip in use is enhanced, and the laser chip is not easy to damage.
Drawings
FIG. 1 is a schematic diagram of a semiconductor laser chip with phonon topology quantum state and photon topology edge state layers according to an embodiment of the present invention;
fig. 2 is a SIMS secondary ion mass spectrum of a semiconductor laser chip having phonon topology quantum states and photon topology edge state layers in accordance with an embodiment of the present invention.
In the figure: 100. a substrate; 101. a lower confinement layer; 102. a lower waveguide layer; 103. an active layer; 104. an upper waveguide layer; 105. an upper confinement layer; 106. phonon topology quantum states and photon topology edge state layers.
Detailed Description
The following detailed description of the present application is provided in conjunction with the accompanying drawings, and it is to be understood that the following detailed description is merely illustrative of the application and is not to be construed as limiting the scope of the application, since numerous insubstantial modifications and adaptations of the application will be to those skilled in the art in light of the foregoing disclosure.
As shown in fig. 1 and 2, a semiconductor laser chip with phonon topology quantum state and photon topology edge state layers comprises a substrate 100, a lower limiting layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104 and an upper limiting layer 105 which are sequentially connected from bottom to top, wherein the phonon topology quantum state and photon topology edge state layers 106 are arranged between the upper waveguide layer 104 and the upper limiting layer 105.
Further, the phonon topology quantum state and photon topology edge state layer 106 is provided with specific dielectric constant distribution, refractive index distribution and elastic coefficient distribution, and the phonon topology quantum state and photon topology edge state layer 106 constructs a time inversion symmetry break and a space inversion symmetry break.
Further, the dielectric constant distribution of the phonon topology quantum state and photon topology edge state layer 106 has a function y=e x Cosx profile;
the dielectric constant of a semiconductor has a great influence on the device characteristics, and determines the distribution and speed of charges in the semiconductor, and therefore the speed and response capability of the semiconductor device, and determines the capacitance value of the semiconductor device, and the larger the dielectric constant of a material in a capacitor is, the larger the capacitance is, and the carrier density, resistance, conductivity and the like of the material are affected.
The refractive index coefficient distribution of phonon topology quantum states and photon topology edge state layer 106 has a function y=e x +sinx curve distribution;
it should be noted that, when the light propagation medium changes, such as from vacuum to semiconductor material, the speed of light changes, and the propagation direction of light changes, the refractive index is a physical quantity describing the speed change.
It should be further noted that, the refractive index of the semiconductor material is closely related to factors such as constituent elements, lattice structures and energy band structures thereof, in general, the refractive index of the semiconductor material varies with the wavelength of light, because the modes of interaction between light of different wavelengths and substances in the semiconductor material are different, so as to cause refractive index differences, in the semiconductor material, the refractive index variation has an important influence on the design and performance of the optoelectronic device, the refractive index is also closely related to the working principle of the optoelectronic device, specifically, the working principle of the laser is that stimulated radiation is generated in the semiconductor material, so that light can be amplified and focused, and in the design of the laser, the refractive index variation affects the propagation and emission of light, so as to affect the working effect of the laser, thereby achieving the purpose of improving the performance of the laser.
The elastic coefficient distribution of phonon topology quantum state and photon topology edge state layer 106 has a function y=e x +cosx curve distribution.
The elastic coefficient is the ratio of stress to strain to which the object is subjected.
Further, the phonon topology quantum state and photon topology edge state layer 106 has a specific Al/C element ratio distribution, in/C element ratio distribution.
Further, the Al/C element ratio distribution of the phonon topology quantum state and photon topology edge state layer 106 has a function y=e x A sinx curve distribution;
the In/C element proportional distribution of the phonon topology quantum state and photon topology edge state layer 106 has a function y=x 2 A sinx curve distribution.
Further, the phonon topology quantum state and photon topology edge state layer 106 is InGaN, gaN, alGaN, alInN, alInGaN, alN, inN, BN, ga 2 O 3 The phonon topology quantum state and photon topology edge state layer 106 has a thickness of 5 to 5000 angstroms, or any combination thereof.
Further, the lower confinement layer 101 and the upper confinement layer 105 are any one or any combination of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, and the thickness of the lower confinement layer 101 and the upper confinement layer 105 is 10 to 80000 a m.
Further, the lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of GaN, inGaN, alInGaN, alInN, inN, and the thicknesses of the lower waveguide layer 102 and the upper waveguide layer 104 are 5 to 20000 a.
Further, the light emitting wavelength of the active layer 103 is 200-420 nm, the active layer 103 is a periodic structure formed by a well layer and a barrier layer, and the number of periods is m, so that 3 is more than or equal to m is more than or equal to 1;
the well layer is any one or any combination of InGaN, inN, alInN, gaN, alGaN, alInGaN, alN, and the thickness of the well layer is 10-100 angstroms;
the barrier layer is any one or any combination of GaN, alGaN, alInGaN, alN, alInN, and the thickness of the well layer is 10-200A/m.
Further, the substrate 100 includes sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiNx, sapphire/SiO 2 SiNx composite substrate and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
Further, the comparative data of the experimental items of the ultraviolet laser chip of the present embodiment and the conventional laser chip are shown in the following table:
| ultraviolet laser-item | Traditional laser chip | The laser chip of the invention | Amplitude of variation |
| Limiting factor | 1.40％ | 3.16％ | 126％ |
| Internal optical loss (cm) -1 ) | 17.2 | 6.19 | -64％ |
Compared with the traditional laser chip, the limiting factor of the laser chip is improved from 1.40% to 3.16%, and is improved by 126%; the internal optical loss is from 17.2cm -1 Reduced to 6.19cm -1 The data shows that the laser chip of the invention improves the limiting factor, reduces the internal optical loss, improves the mode gain of the laser and is more stable in use, thereby prolonging the service life of the laser.
It should be further noted that, compared with the prior art, by adding the phonon topology quantum state and photon topology edge state layer 106 between the upper waveguide layer 104 and the upper confinement layer 105, the phonon topology quantum state and photon topology edge state layer 106 are used to construct a time inversion symmetry break and a space inversion symmetry break, so as to form a unidirectional conduction phonon boundary mode which is not scattered and regulate phonon transport, thereby further forming a topology phase transition and deriving the phonon topology quantum state, so that the laser generates a low-dissipation phonon transport channel, reduces the symmetry break far from the equilibrium phase transition, solves the problems of conductivity jump and capacitance drop of the laser at the threshold, meanwhile, the surface electrons in the laser are not scattered by impurities, the photon topology edge state of adiabatic transport is generated, and the surface state and the edge state have extremely low series resistance, can reduce the voltage rise after laser lasing, solve the problems of series resistance drop and abrupt change on junction voltage jump, reduce the light absorption loss caused by impurities in the upper waveguide layer 104, and solve the discontinuous problem of the ideal factor jump.
The foregoing examples illustrate only a few embodiments of the invention and are described in detail herein without thereby limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention.
Claims (10)
1. The semiconductor laser chip with the phonon topology quantum state and photon topology edge state layers comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially connected from bottom to top.
2. A semiconductor laser chip having phonon topology quantum state and photon topology edge state layers as recited in claim 1, wherein: the phonon topology quantum state and photon topology edge state layer is provided with specific dielectric constant distribution, refractive index coefficient distribution and elastic coefficient distribution.
3. A semiconductor laser chip having phonon topology quantum state and photon topology edge state layers as recited in claim 2, wherein: the dielectric constant distribution of the phonon topology quantum state and photon topology edge state layers has a function y=e x Cosx profile;
the refractive index coefficient distribution of the phonon topology quantum state and photon topology edge state layer has a function y=e x +sinx curve distribution;
the elastic coefficient distribution of the phonon topology quantum state and photon topology edge state layer has a function y=e x +cosx curve distribution.
4. A semiconductor laser chip having phonon topology quantum state and photon topology edge state layers as recited in claim 3, wherein: the phonon topology quantum state and photon topology edge state layer has specific Al/C element proportion distribution and In/C element proportion distribution.
5. A semiconductor laser chip having phonon topology quantum state and photon topology edge state layers as recited in claim 4, wherein: the Al/C element proportion distribution of the phonon topological quantum state and photon topological edge state layers has a function y=e x A sinx curve distribution;
the In/C element proportion distribution of the phonon topology quantum state and photon topology edge state layers has a function of y=x 2 A sinx curve distribution.
6. A semiconductor laser chip having phonon topology quantum state and photon topology edge state layers as recited in claim 1, wherein: the phonon topology quantum state and photon topology edge state layer is InGaN, gaN, alGaN, alInN, alInGaN, alN, inN, BN, ga 2 O 3 The thickness of the phonon topological quantum state and photon topological edge state layers is 5-5000 angstroms.
7. A semiconductor laser chip having phonon topology quantum state and photon topology edge state layers as recited in claim 1, wherein: the lower limiting layer and the upper limiting layer are any one or any combination of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, and the thickness of the lower limiting layer and the upper limiting layer is 10-80000 Emeter.
8. A semiconductor laser chip having phonon topology quantum state and photon topology edge state layers as recited in claim 1, wherein: the lower waveguide layer and the upper waveguide layer are any one or any combination of GaN, inGaN, alInGaN, alInN, inN, and the thicknesses of the lower waveguide layer and the upper waveguide layer are 5-20000 angstroms.
9. A semiconductor laser chip having phonon topology quantum state and photon topology edge state layers as recited in claim 1, wherein: the light-emitting wavelength of the active layer is 200-420 nm, and the active layer is a periodic structure consisting of a well layer and a barrier layer;
the well layer is any one or any combination of InGaN, inN, alInN, gaN, alGaN, alInGaN, alN, and the thickness of the well layer is 10-100 angstroms;
the barrier layer is any one or any combination of GaN, alGaN, alInGaN, alN, alInN, and the thickness of the barrier layer is 10-200 angstroms.
10. A semiconductor laser chip having phonon topology quantum state and photon topology edge state layers as recited in claim 1, wherein: the substrate is sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiNx, sapphire/SiO 2 SiNx composite substrate and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311779734.XA CN117856041A (en) | 2023-12-22 | 2023-12-22 | Semiconductor laser chip with phonon topology quantum state and photon topology edge state layers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311779734.XA CN117856041A (en) | 2023-12-22 | 2023-12-22 | Semiconductor laser chip with phonon topology quantum state and photon topology edge state layers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117856041A true CN117856041A (en) | 2024-04-09 |
Family
ID=90532258
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311779734.XA Pending CN117856041A (en) | 2023-12-22 | 2023-12-22 | Semiconductor laser chip with phonon topology quantum state and photon topology edge state layers |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117856041A (en) |
-
2023
- 2023-12-22 CN CN202311779734.XA patent/CN117856041A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN118054303A (en) | Semiconductor laser chip with light absorption loss suppression layer | |
| CN116581643A (en) | Semiconductor ultraviolet laser | |
| CN116191200A (en) | Semiconductor laser element with phonon scattering regulation and control layer | |
| CN116759889A (en) | Semiconductor laser element with ion conjugated layer | |
| CN117856041A (en) | Semiconductor laser chip with phonon topology quantum state and photon topology edge state layers | |
| CN219779408U (en) | Semiconductor ultraviolet laser | |
| CN220066405U (en) | Semiconductor laser element with topological phonon state layer | |
| CN219677770U (en) | Semiconductor ultraviolet laser | |
| CN220066403U (en) | Semiconductor laser element with plasmon coupling layer | |
| CN117175347B (en) | Semiconductor laser | |
| CN117996564A (en) | Laser chip with phonon topology quantum state and photon topology edge state layers | |
| CN117691466A (en) | Semiconductor ultraviolet laser diode | |
| CN118508232A (en) | Semiconductor laser element with resonance tunneling layer | |
| CN117175351A (en) | Semiconductor laser element with nonreciprocal topological laser oscillation layer | |
| CN116316065A (en) | Semiconductor laser with optical field loss control layer | |
| CN116646822A (en) | Semiconductor laser element with fermi surface topological layer | |
| CN117913663A (en) | Semiconductor ultraviolet laser element with topological linear dispersion layer | |
| CN117526088A (en) | Semiconductor laser element with spin polarized electron layer | |
| CN116526297A (en) | Semiconductor laser with double exciton quantum confinement layer | |
| CN116780339A (en) | Semiconductor laser element | |
| CN117691465A (en) | Semiconductor laser element | |
| CN117239544A (en) | Semiconductor laser element with discrete barrier layer | |
| CN117856039A (en) | Gallium nitride-based semiconductor laser with vortex light modulation layer | |
| CN117317799A (en) | Semiconductor ultraviolet laser | |
| CN116667145A (en) | Semiconductor laser element with topological phonon state layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |