CN117856039A - Gallium nitride-based semiconductor laser with vortex light modulation layer - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 27
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000009826 distribution Methods 0.000 claims description 67
- 230000010287 polarization Effects 0.000 claims description 27
- 229910052594 sapphire Inorganic materials 0.000 claims description 15
- 239000010980 sapphire Substances 0.000 claims description 15
- 239000002131 composite material Substances 0.000 claims description 13
- 230000002269 spontaneous effect Effects 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 9
- 229910004205 SiNX Inorganic materials 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 229910010093 LiAlO Inorganic materials 0.000 claims description 3
- 229910020068 MgAl Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052596 spinel Inorganic materials 0.000 claims description 3
- 239000011029 spinel Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 12
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Abstract
The invention discloses a gallium nitride-based semiconductor laser with a vortex light modulation layer, and relates to the technical field of semiconductor photoelectric devices. The semiconductor laser comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially connected from bottom to top; the semiconductor laser breaks optical reciprocity through the vortex light modulation layer to form non-diffracted three-dimensional polarized characteristic laser, eliminates back scattering of the laser in the transmission process of the upper waveguide layer and the lower waveguide layer, isolates vortex light with specific topological numbers, isolates and reduces complex unstable multimode modes, absorbs stray light and leakage light, reduces the aspect ratio of a far-field image FFP, reduces the shape interference of the FFP, improves the beam quality factor, ensures that the laser has better illumination capability through the improvement of the beam quality, and provides better performance for the use of the laser.
Description
Technical Field
The invention belongs to the technical field of semiconductor photoelectric devices, and particularly relates to a gallium nitride-based semiconductor laser with a vortex light modulation layer.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The laser has various types and various classification modes, and mainly comprises solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like. The laser is greatly different from the nitride semiconductor light-emitting diode, 1) the laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level; 2) Use of lasers current densities up to KA/cm 2 More than 2 orders of magnitude higher than nitride light emitting diodes, thereby causing stronger electron leakage, more severe auger recombination, stronger polarization effect, more severe electron-hole mismatch, resulting in more severe efficiency decay Droop effect; 3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated; 4) The principle is different: the light emitting diode generates radiation composite luminescence by electron hole transition to a quantum well or a p-n junction under the action of external voltage, and the laser can perform lasing under the condition that the lasing condition is satisfied, the inversion distribution of carriers in an active area is required to be satisfied, stimulated radiation light oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss by satisfying a threshold condition, and finally laser is output.
The nitride semiconductor laser has the following problems: 1) The absorption loss of the optical waveguide is high, inherent carbon impurities compensate acceptors in a p-type semiconductor, damage p-type and the like, the ionization rate of p-type doping is low, a large amount of unionized Mg acceptors impurities can cause the increase of internal optical loss, the refractive index dispersion of the laser is realized, the fluctuation of the concentration of high-concentration carriers influences the refractive index of an active layer, the limiting factor is reduced along with the increase of wavelength, and the mode gain of the laser is reduced; 2) The laser wave patterns can be divided into transverse modes and longitudinal and transverse modes; the light intensity distribution of the transverse mode in the section vertical to the optical axis is determined by the waveguide structure of the semiconductor laser, if the transverse mode is complex and unstable, the coherence of the output light is poor; the longitudinal modes are distributed in standing waves in the propagation direction of the resonant cavity, and many longitudinal modes are simultaneously excited or have intermode changes, so that high time coherence cannot be obtained, and the FFP quality of far-field images is poor. 3) After the laser is excited, the carrier concentration of the active region of the multiple quantum well is saturated, the bipolar conductivity effect is weakened, the series resistance of the laser is increased, the voltage of the laser is increased, when the voltage is overlarge, the temperature of the laser can be increased, the optical performance of the laser is further influenced, electronic elements in the laser can be seriously burnt, and finally the laser is damaged.
Disclosure of Invention
The invention aims to solve the problems and provide the semiconductor laser with simple structure and reasonable design.
The invention realizes the above purpose through the following technical scheme:
the utility model provides a gallium nitride-based semiconductor laser with vortex light modulation layer, includes by supreme substrate, lower limit layer, lower waveguide layer, active layer, last waveguide layer, the last limit layer that links to each other in proper order down, the vortex light modulation layer has been add to the laser, the vortex light modulation layer includes first vortex light modulation layer and second vortex light modulation layer, first vortex light modulation layer locates between lower waveguide layer and the lower limit layer, the second vortex light modulation layer is located between last waveguide layer and the last limit layer.
As a further optimization scheme of the invention, the first vortex light modulation layer and the second vortex light modulation layer are provided with specific piezoelectric polarization coefficient distribution and spontaneous polarization coefficient distribution.
As a further refinement of the invention, the piezoelectric polarization coefficient distribution of the first vortex light modulation layer has a function y= (e) x +e -x )/(e x -e -x ) A third quadrant curve distribution, the piezoelectric polarization coefficient distribution of the second vortex light modulation layer having a function y=ax 3 +bx 2 A +cx+d curve distribution, wherein a > 0, and Δ= 4 (b 2 -3ac)≤0；
The spontaneous polarization coefficient distribution of the first vortex light modulation layer has a function y=e x /x 2 A third quadrant curve distribution, the spontaneous polarization coefficient distribution of the second vortex light modulation layer having y=ex 3 +fx 2 A +gx+h curve distribution, where e < 0, and Δ= 4 (f 2 -3eg)＞0。
As a further optimization scheme of the invention, the vortex light modulation layer contains Al/H element proportion distribution, in/H element proportion distribution and In/O element proportion distribution.
As a further optimization of the invention, the Al/H element proportion distribution of the vortex light modulation layer has a function y=e x A sinx curve distribution;
the In/H element ratio distribution of the vortex light modulation layer has a function y=ax 3 +bx 2 A +cx+d curve distribution, where a > 0, Δ= 4 (b 2 -3ac)≤0；
The In/O element proportion distribution of the first vortex light modulation layer has a function y=e x A third quadrant curve distribution; the In/O element proportion distribution of the second vortex light modulation layer has a function y=e x -e -x A curve distribution.
As a further optimization scheme of the invention, the vortex light modulation layer is InGaN, gaN, alGaN, alInN, alInGaN, alN, inN, BN, ga 2 O 3 Any one or any combination of the above; the thickness of the vortex light modulation layer is 5-5000 m.
As a further optimization scheme of the invention, the lower limiting layer and the upper limiting layer are any one or any combination of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, and the thickness of the lower limiting layer and the upper limiting layer is 10-80000A m.
As a further optimization scheme of the invention, the lower waveguide layer and the upper waveguide layer are any one or any combination of GaN, inGaN, alInGaN, alInN, inN, and the thicknesses of the lower waveguide layer and the upper waveguide layer are 5-20000 angstroms.
As a further optimization scheme of the invention, the light-emitting wavelength of the active layer is 200-420 nm, and the active layer is a periodic structure consisting of a well layer and a barrier layer;
the well layer is any one or any combination of InGaN, inN, alInN, gaN, alGaN, alInGaN, alN, and the thickness of the well layer is 10-100 angstroms;
the barrier layer is any one or any combination of GaN, alGaN, alInGaN, alN, alInN, and the thickness of the barrier layer is 10-200 angstroms.
As a further optimization scheme of the invention, the substrate is sapphire, silicon, ge, siC, alN, gaN, gaAs, inP or sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiNx, sapphire/SiO 2 SiNx composite substrate and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
The invention has the beneficial effects that:
the invention breaks the optical reciprocity through the vortex light modulation layer to form non-diffraction three-dimensional polarization characteristic laser, eliminates the back scattering of the laser in the transmission process of the upper waveguide layer and the lower waveguide layer, isolates vortex light with specific topological numbers, isolates and reduces complex unstable multimode modes, absorbs stray light and leakage light, reduces the aspect ratio of a far-field image FFP, reduces the shape interference of the FFP, improves the beam quality factor, ensures that the laser has better illumination capability through the improvement of the beam quality, and provides better performance for the use of the laser.
According to the invention, the vortex light modulation layer is used for carrying out multidimensional spiral phase and orbital angular momentum manipulation on laser, vortex light with almost no crosstalk and different topological numbers and different spin orders is formed between the upper waveguide layer and the lower waveguide layer, so that the absorption loss of the optical waveguide is reduced, and the mode gain of the laser element is improved.
Drawings
Fig. 1 is a schematic structural view of a gallium nitride-based semiconductor laser having a vortex light modulation layer according to the present invention;
fig. 2 is a SIMS secondary ion mass spectrum of a gallium nitride-based semiconductor laser with a vortex light modulation layer of the present invention.
In the figure: 100. a substrate; 101. a lower confinement layer; 102. a lower waveguide layer; 103. an active layer; 104. an upper waveguide layer; 105. an upper confinement layer; 106. a vortex light modulation layer; 106a, a first vortex light modulation layer; 106b, a second vortex light modulation layer.
Detailed Description
The following detailed description of the present application is provided in conjunction with the accompanying drawings, and it is to be understood that the following detailed description is merely illustrative of the application and is not to be construed as limiting the scope of the application, since numerous insubstantial modifications and adaptations of the application will be to those skilled in the art in light of the foregoing disclosure.
As shown in fig. 1 and 2, a gallium nitride-based semiconductor laser with a vortex light modulation layer includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105, which are sequentially connected from bottom to top, the laser is additionally provided with a vortex light modulation layer 106, the vortex light modulation layer 106 includes a first vortex light modulation layer 106a and a second vortex light modulation layer 106b, the first vortex light modulation layer 106a is disposed between the lower waveguide layer 102 and the lower confinement layer 101, and the second vortex light modulation layer 106b is disposed between the upper waveguide layer 104 and the upper confinement layer 105.
Further, the first vortex light modulation layer 106a and the second vortex light modulation layer 106b are each provided with a specific piezoelectric polarization coefficient distribution and a specific spontaneous polarization coefficient distribution.
It should be noted that spontaneous polarization refers to a phenomenon that a material spontaneously generates polarization in the absence of an external electric field, and is an electric polarization phenomenon inside the material, and specifically, charges inside the material are spontaneously distributed during spontaneous polarization to form an electric field, and this electric field affects physical properties of the material, such as a thermal expansion coefficient, a dielectric constant, and the like; piezoelectric polarization refers to a polarization phenomenon generated when a material is subjected to external pressure, specifically, when the material is subjected to external pressure, a non-uniform phenomenon of charge distribution is generated, so that an electric field is formed, and the electric field affects physical properties of the material, such as resistivity, dielectric constant and the like.
Further, the piezoelectric polarization coefficient distribution of the first vortex light modulation layer 106a has a function y= (e) x +e -x )/(e x -e -x ) The third quadrant curve distribution, the piezoelectric polarization coefficient distribution of the second vortex light modulation layer 106b has a function y=ax 3 +bx 2 A +cx+d curve distribution, wherein a > 0, and Δ= 4 (b 2 -3ac)≤0；
The spontaneous polarization coefficient distribution of the first vortex light modulation layer 106a has a function y=e x /x 2 The third quadrant curve distribution, the spontaneous polarization coefficient distribution of the second vortex light modulation layer 106b has y=ex 3 +fx 2 A +gx+h curve distribution, where e < 0, and Δ= 4 (f 2 -3eg)＞0。
Further, the vortex light modulation layer 106 contains Al/H element ratio distribution, in/H element ratio distribution, and In/O element ratio distribution.
Further, the Al/H element ratio distribution of the vortex light modulating layer 106 has a function y=e x A sinx curve distribution;
the In/H element proportional distribution of the vortex light modulating layer 106 has a function y=ax 3 +bx 2 A +cx+d curve distribution, where a > 0, Δ= 4 (b 2 -3ac)≤0；
The In/O element ratio distribution of the first vortex light modulation layer 106a has a function y=e x A third quadrant curve distribution; the In/O element ratio distribution of the second vortex light modulation layer 106b has a function y=e x -e -x A curve distribution.
Further, the vortex light modulation layer 106 is InGaN, gaN, alGaN, alInN, alInGaN,AlN、InN、BN、Ga 2 O 3 Any one or any combination of the above; the thickness of the vortex light modulation layer 106 is 5 to 5000 a/m.
Further, the lower confinement layer 101 and the upper confinement layer 105 are any one or any combination of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, and the thickness of the lower confinement layer 101 and the upper confinement layer 105 is 10 to 80000 a m.
Further, the lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of GaN, inGaN, alInGaN, alInN, inN, and the thicknesses of the lower waveguide layer 102 and the upper waveguide layer 104 are 5 to 20000 a.
Further, the light emitting wavelength of the active layer 103 is 200-420 nm, the active layer 103 is a periodic structure formed by a well layer and a barrier layer, and the number of periods is m, so that 3 is more than or equal to m is more than or equal to 1;
the well layer is any one or any combination of InGaN, inN, alInN, gaN, alGaN, alInGaN, alN, and the thickness of the well layer is 10-100 angstroms;
the barrier layer is any one or any combination of GaN, alGaN, alInGaN, alN, alInN, and the thickness of the barrier layer is 10-200 angstroms.
Further, the substrate 100 is sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiNx, sapphire/SiO 2 SiNx composite substrate and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
Further, the comparison data of the laser according to the embodiment of the present invention and the conventional laser are shown in the following table:
compared with the traditional laser, the laser of the inventionThe beam quality factor of the optical device is 3.7M 2 Reduced to 1.06M 2 249% is improved; the limiting factor is improved from 1.40% to 3.19%, and 128% is improved; the internal optical loss is from 17.2cm -1 Reduced to 6.7cm -1 The reduction of 61 percent; the threshold current density is 3.6kA/cm 2 Reduced to 0.67kA/cm 2 The reduction of 81 percent; the threshold voltage is reduced from 8.5V to 4.9V by 42%.
It should be noted that the beam quality affects the focusing effect of the laser and the far-field spot distribution, which are parameters for characterizing the quality of the laser beam, and that the closer the actual laser beam quality factor is 1, the closer the beam quality is to the ideal beam, so the beam quality factor M 2 Although by 3.7M 2 Reduced to 1.06M 2 But for lasers the performance is instead improved.
It should be further noted that, compared with the prior art, the laser of the present invention is additionally provided with the vortex light modulation layer 106, and the vortex light with different topological numbers and different spin orders and almost no crosstalk is formed between the upper waveguide layer 104 and the lower waveguide layer 102 by performing multidimensional spiral phase and orbital angular momentum manipulation on the laser through the vortex light modulation layer 106, so that the absorption loss of the optical waveguide is reduced, and the mode gain of the laser element is improved; meanwhile, the vortex light modulation layer 106 breaks the optical reciprocity to form non-diffracted three-dimensional polarization characteristic laser, eliminates back scattering of the laser in the transmission process of the upper waveguide layer 104 and the lower waveguide layer 102, isolates vortex light with specific topological numbers, isolates and reduces complex unstable multimode modes, absorbs stray light and leakage light, reduces the aspect ratio of a far-field image FFP, reduces the shape disturbance of the FFP, improves the beam quality factor (namely, the beam quality factor is closer to 1), and has the advantages that the beam quality factor takes a value closer to 1, the beam diffraction divergence is slower, the brightness is higher, and the beam quality is higher; when pumping power is increased, after carrier concentration of the active layer 103 is saturated, vortex light forms spiral wave front phase distribution and phase singular points, stokes light with opposite topological order and spin order is induced to generate and amplify pumping laser, backward propagation laser dissipates, forward propagation laser gain is increased, laser oscillation is improved, bipolar conductivity is reduced, threshold current and voltage of laser lasing are reduced, stability of the laser is enhanced, and elements in the laser cannot be burnt out due to the fact that the voltage is too high in use, and elements in the laser cannot be raised to too high temperature, so that service life of the laser is influenced.
The foregoing examples illustrate only a few embodiments of the invention and are described in detail herein without thereby limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention.
Claims (10)
1. The utility model provides a gallium nitride-based semiconductor laser with vortex light modulation layer, includes by supreme substrate, lower limit layer, lower waveguide layer, active layer, last waveguide layer, the limit layer that links to each other in proper order down, its characterized in that, the laser instrument has add vortex light modulation layer, vortex light modulation layer includes first vortex light modulation layer and second vortex light modulation layer, first vortex light modulation layer locates between lower waveguide layer and the lower limit layer, second vortex light modulation layer locates between last waveguide layer and the upper limit layer.
2. A gallium nitride-based semiconductor laser with a vortex light modulating layer according to claim 1, wherein: the first vortex light modulation layer and the second vortex light modulation layer are respectively provided with specific piezoelectric polarization coefficient distribution and spontaneous polarization coefficient distribution.
3. A gallium nitride-based semiconductor laser with a vortex light modulating layer according to claim 2, wherein: the piezoelectric polarization coefficient distribution of the first vortex light modulation layer has a function y= (e) x +e -x )/(e x -e -x ) A third quadrant curve distribution, the piezoelectric polarization coefficient distribution of the second vortex light modulation layer having a function y=ax 3 +bx 2 A +cx+d curve profile, whereina > 0, and Δ= 4 (b 2 -3ac)≤0；
The spontaneous polarization coefficient distribution of the first vortex light modulation layer has a function y=e x /x 2 A third quadrant curve distribution, the spontaneous polarization coefficient distribution of the second vortex light modulation layer having y=ex 3 +fx 2 A +gx+h curve distribution, where e < 0, and Δ= 4 (f 2 -3eg)＞0。
4. A gallium nitride-based semiconductor laser having a vortex light modulating layer according to claim 3, wherein: the vortex light modulation layer contains Al/H element proportion distribution, in/H element proportion distribution and In/O element proportion distribution.
5. A gallium nitride-based semiconductor laser with a vortex light modulating layer according to claim 4, wherein: the Al/H element proportion distribution of the vortex light modulation layer has a function y=e x A sinx curve distribution;
the In/H element ratio distribution of the vortex light modulation layer has a function y=ax 3 +bx 2 A +cx+d curve distribution, where a > 0, Δ= 4 (b 2 -3ac)≤0；
The In/O element proportion distribution of the first vortex light modulation layer has a function y=e x A third quadrant curve distribution; the In/O element proportion distribution of the second vortex light modulation layer has a function y=e x -e -x A curve distribution.
6. A gallium nitride-based semiconductor laser with a vortex light modulating layer according to claim 1, wherein: the vortex light modulation layer is InGaN, gaN, alGaN, alInN, alInGaN, alN, inN, BN, ga 2 O 3 Any one or any combination of the above; the thickness of the vortex light modulation layer is 5-5000 m.
7. A gallium nitride-based semiconductor laser with a vortex light modulating layer according to claim 1, wherein: the lower limiting layer and the upper limiting layer are any one or any combination of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, and the thickness of the lower limiting layer and the upper limiting layer is 10-80000 Emeter.
8. A gallium nitride-based semiconductor laser with a vortex light modulating layer according to claim 1, wherein: the lower waveguide layer and the upper waveguide layer are any one or any combination of GaN, inGaN, alInGaN, alInN, inN, and the thicknesses of the lower waveguide layer and the upper waveguide layer are 5-20000 angstroms.
9. A gallium nitride-based semiconductor laser with a vortex light modulating layer according to claim 1, wherein: the light-emitting wavelength of the active layer is 200-420 nm, and the active layer is a periodic structure consisting of a well layer and a barrier layer;
the well layer is any one or any combination of InGaN, inN, alInN, gaN, alGaN, alInGaN, alN, and the thickness of the well layer is 10-100 angstroms;
the barrier layer is any one or any combination of GaN, alGaN, alInGaN, alN, alInN, and the thickness of the barrier layer is 10-200 angstroms.
10. A gallium nitride-based semiconductor laser with a vortex light modulating layer according to claim 1, wherein: the substrate is sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiNx, sapphire/SiO 2 SiNx composite substrate and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
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