CN117613671A - Semiconductor laser chip with quantum Hall electric conduction layer - Google Patents
Semiconductor laser chip with quantum Hall electric conduction layer Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 229910004247 CaCu Inorganic materials 0.000 claims abstract description 40
- 229910002367 SrTiO Inorganic materials 0.000 claims abstract description 39
- 230000000903 blocking effect Effects 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000002096 quantum dot Substances 0.000 claims abstract description 16
- 229910052594 sapphire Inorganic materials 0.000 claims description 15
- 239000010980 sapphire Substances 0.000 claims description 15
- 239000002131 composite material Substances 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 9
- 229910004205 SiNX Inorganic materials 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 3
- 229910010093 LiAlO Inorganic materials 0.000 claims description 3
- 229910020068 MgAl Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052596 spinel Inorganic materials 0.000 claims description 3
- 239000011029 spinel Substances 0.000 claims description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims 1
- 238000002347 injection Methods 0.000 abstract description 16
- 239000007924 injection Substances 0.000 abstract description 16
- 230000005855 radiation Effects 0.000 abstract description 11
- 230000006798 recombination Effects 0.000 abstract description 7
- 238000005215 recombination Methods 0.000 abstract description 7
- 230000005284 excitation Effects 0.000 abstract description 6
- 230000010287 polarization Effects 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 description 7
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000000370 acceptor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000005472 transition radiation Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
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Abstract
The invention provides a semiconductor laser chip with a quantum Hall electric conduction layer, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electronic blocking layer and an upper limiting layer which are sequentially connected from bottom to top, wherein the quantum Hall electric conduction layer is arranged between the upper waveguide layer and the electronic blocking layer, and is FeSe@SrTiO 3 、MoGe@LaAlO 3 、La 2 CuO 4 @LaSrCuO、Bi 2 Te 3 @FeTe or Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 The multi-dimensional topological quantum dot structure is formed. The semiconductor laser chip provided by the invention has the advantages that the quantum Hall electric conduction layer is arranged between the upper waveguide layer and the electron blocking layer to form a topological edge state polarization interface, so that the hole mobility can be accelerated, the transverse expansion and longitudinal injection efficiency of holes of the electron blocking layer are enhanced, the hole injection efficiency and transportation of an active layer are improved, the radiation recombination efficiency of the active layer of the laser chip is improved, the excitation threshold value of the laser chip is reduced, and the laser core is improvedOptical power and slope efficiency of the patch.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectric devices, in particular to a semiconductor laser chip with a quantum Hall electric conduction layer.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precision welding, density optical storage and the like. The laser has various types and various classification modes, and mainly comprises solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like.
The existing laser has great difference from nitride semiconductor light emitting diode, including:
1) The laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level;
2) Use of lasers current densities up to KA/cm 2 More than 2 orders of magnitude higher than nitride semiconductor light emitting diodes, thereby causing stronger electron leakage, more severe auger recombination, stronger polarization effects, more severe electron hole mismatch and more severe efficiency decay Droop effects;
3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated;
4) The principle is different: the light emitting diode generates radiation composite luminescence by electron hole transition to a quantum well or a p-n junction under the action of external voltage, and the laser can perform lasing under the condition that the lasing condition is satisfied, the inversion distribution of carriers in an active area is required to be satisfied, stimulated radiation light oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss by satisfying a threshold condition, and finally laser is output.
Based on the above-described difference, the conventional nitride semiconductor laser has the following problems:
1) The absorption loss of the optical waveguide is high, inherent carbon impurities compensate acceptors in a p-type semiconductor, damage p-type and the like, the ionization rate of p-type doping is low, a large amount of unionized Mg acceptors impurities can cause the increase of internal optical loss, the refractive index dispersion of the laser is reduced along with the increase of wavelength, and the mode gain of the laser is reduced;
2) The p-type semiconductor has the advantages that the Mg acceptor activation energy is large, the ionization efficiency is low, the hole concentration is far lower than the electron concentration, the hole mobility is far lower than the electron mobility, the problems that a hole injection barrier is promoted by a quantum well polarized electric field, the hole overflows an active layer and the like are solved, the hole injection is uneven and the efficiency is low, the serious asymmetry mismatch of electron holes in the quantum well, the electron leakage and the carrier de-localization are caused, the hole transportation in the quantum well is more difficult, the carrier injection is uneven, the gain is uneven, meanwhile, the gain spectrum of the laser is widened, the peak gain is reduced, the threshold current of the laser is increased, and the slope efficiency is reduced;
3) The valence band step of the laser is increased, the hole is more difficult to transport in the quantum well, the carrier injection is uneven, and the gain is uneven.
Disclosure of Invention
The invention aims to provide a semiconductor laser chip with a quantum Hall electric conduction layer, so as to solve the technical problems, and the quantum Hall electric conduction layer is arranged between an upper waveguide layer and an electron blocking layer to form a topological edge state polarization interface, so that the hole mobility can be accelerated, the transverse expansion and longitudinal injection efficiency of holes of the electron blocking layer can be enhanced, the hole injection efficiency and the transportation of an active layer can be improved, the radiation recombination efficiency of the active layer of the laser chip can be improved, the excitation threshold of the laser chip can be reduced, and the optical power and the slope efficiency of the laser chip can be improved.
In order to solve the technical problems, the invention provides a semiconductor laser with a quantum Hall electric conduction layerThe chip comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electronic barrier layer and an upper limiting layer which are sequentially connected from bottom to top, wherein a quantum Hall electric conduction layer is arranged between the upper waveguide layer and the electronic barrier layer, and the quantum Hall electric conduction layer is FeSe@SrTiO 3 、MoGe@LaAlO 3 、La 2 CuO 4 @LaSrCuO、Bi 2 Te 3 @FeTe or Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 The multi-dimensional topological quantum dot structure is formed.
According to the semiconductor laser chip provided by the scheme, the quantum Hall electric conduction layer is arranged between the upper waveguide layer and the electron blocking layer to form a topological edge state polarization interface, so that hole mobility can be accelerated, transverse expansion and longitudinal injection efficiency of holes of the electron blocking layer are enhanced, hole injection efficiency and transportation of an active layer are improved, radiation recombination efficiency of the active layer of the laser chip is improved, an excitation threshold of the laser chip is reduced, and optical power and slope efficiency of the laser chip are improved.
Further, the quantum hall conductive layer is a multidimensional topological quantum dot structure formed by binary combination, and the binary combination comprises:
FeSe@SrTiO 3 /MoGe@LaAlO 3 、
FeSe@SrTiO 3 /La 2 CuO 4 @LaSrCuO、
FeSe@SrTiO 3 /Bi 2 Te 3 @FeTe、
FeSe@SrTiO 3 /Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 、
MoGe@LaAlO 3 /La 2 CuO 4 @LaSrCuO、
MoGe@LaAlO 3 /Bi 2 Te 3 @FeTe、
MoGe@LaAlO 3 /Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 、
La 2 CuO 4 @LaSrCuO/Bi 2 Te 3 @FeTe、
La 2 CuO 4 @LaSrCuO/Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 or (b)
Bi 2 Te 3 @FeTe/Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 。
Further, the quantum hall conductive layer is a multidimensional topological quantum dot structure formed by ternary combination, and the ternary combination comprises:
FeSe@SrTiO 3 /MoGe@LaAlO 3 /La 2 CuO 4 @LaSrCuO、
FeSe@SrTiO 3 /MoGe@LaAlO 3 /Bi 2 Te 3 @FeTe、
FeSe@SrTiO 3 /MoGe@LaAlO 3 /Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 、
MoGe@LaAlO 3 /La 2 CuO 4 @LaSrCuO/Bi 2 Te 3 @FeTe、
MoGe@LaAlO 3 /La 2 CuO 4 @LaSrCuO/Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 or (b)
La 2 CuO 4 @LaSrCuO/Bi 2 Te 3 @FeTe/Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 。
Further, the quantum hall conductive layer is a multidimensional topological quantum dot structure formed by quaternary combination, and the quaternary combination comprises:
FeSe@SrTiO 3 /MoGe@LaAlO 3 /La 2 CuO 4 @LaSrCuO/Bi 2 Te 3 @FeTe、
FeSe@SrTiO 3 /MoGe@LaAlO 3 /La 2 CuO 4 @LaSrCuO/Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 、
FeSe@SrTiO 3 /MoGe@LaAlO 3 /Bi2Te 3 @FeTe/Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 、
FeSe@SrTiO 3 /La 2 CuO 4 @LaSrCuO/Bi 2 Te 3 @FeTe/Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 or (b)
MoGe@LaAlO 3 /La 2 CuO 4 @LaSrCuO/Bi 2 Te 3 @FeTe/Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 。
Further, the quantum Hall electric conduction layer is a multidimensional topological quantum dot structure formed by five-membered combination, and the five-membered combination is as follows:
FeSe@SrTiO 3 /MoGe@LaAlO 3 /La 2 CuO 4 @LaSrCuO/Bi 2 Te 3 @FeTe/Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 。
further, the thickness of the quantum Hall electric conduction layer is 5-5000 angstroms.
Further, the active layer is a periodic structure formed by a well layer and a barrier layer, and the period number m satisfies: 3. and m is more than or equal to 1.
Further, the well layer is InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Or BN, the thickness of which is 10 to 80 Emi; the barrier layer is InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Or BN, and the thickness of the BN is 10 to 120 angstroms.
Further, the lower limiting layer is InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Or BN with a thickness of 50-5000 nm and a Si doping concentration of 1E 18-1E 20cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The lower and upper waveguide layers are InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs、AlInP、AlGaP、InGaP、SiC、Ga 2 O 3 Or BN with a thickness of 50-1000 nm and a Si doping concentration of 1E 16-5E 19cm -3 。
Further, the electron blocking layer and the upper confinement layer are InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Or BN with thickness of 20-1000 nm and Mg doping concentration of 1E 18-1E 20cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiNx, sapphire/SiO 2 SiNx composite substrate and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 Or LiGaO 2 Any one of the composite substrates.
In the scheme, the interface electron structure of the quantum Hall electric conduction layer, the upper waveguide layer and the electron blocking layer forms a topological edge state polarization interface, so that the hole mobility can be accelerated, the transverse expansion and longitudinal injection efficiency of holes of the electron blocking layer are enhanced, the hole injection efficiency and transportation of the active layer are improved, meanwhile, strong spin orbit scattering can be formed, the conduction band generates spin splitting at a K energy valley, the Brillouin limit is enhanced, unpaired quantum tunneling vortex-anti-spin vortex motion is induced, the quantum Hall electric conduction is improved, the transportation of holes in the active layer is further improved, the gain uniformity and peak gain are further improved, the radiation recombination efficiency of the active layer of the laser element is improved, the excitation threshold value of the laser element is reduced, and the light power and slope efficiency of the laser element are improved.
Drawings
Fig. 1 is a schematic diagram of a semiconductor laser chip with a quantum hall conductive layer according to an embodiment of the present invention;
wherein: 100. a substrate; 101. a lower confinement layer; 102. a lower waveguide layer; 103. an active layer; 104. an upper waveguide layer; 105. an electron blocking layer; 106. an upper confinement layer; 107. a quantum hall conductive layer.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1, the present embodiment provides a semiconductor laser chip with a quantum hall electric conduction layer 107, which includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105 and an upper confinement layer 106 sequentially connected from bottom to top, wherein the quantum hall electric conduction layer 107 is disposed between the upper waveguide layer 104 and the electron blocking layer 105, and the quantum hall electric conduction layer 107 is fese@srtio 3 、MoGe@LaAlO 3 、La 2 CuO 4 @LaSrCuO、Bi 2 Te 3 @FeTe or Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 The multi-dimensional topological quantum dot structure is formed.
According to the semiconductor laser chip provided by the embodiment, the quantum Hall electric conduction layer 107 is arranged between the upper waveguide layer 104 and the electron blocking layer 105 to form a topological edge state polarization interface, so that hole mobility can be accelerated, transverse expansion and longitudinal injection efficiency of holes of the electron blocking layer 105 are enhanced, hole injection efficiency and transportation of the active layer 103 are improved, radiation recombination efficiency of the active layer 103 of the laser chip is improved, an excitation threshold of the laser chip is reduced, and optical power and slope efficiency of the laser chip are improved.
Further, the quantum hall conductive layer 107 is a multidimensional topological quantum dot structure formed by binary combination, and the binary combination comprises:
FeSe@SrTiO 3 /MoGe@LaAlO 3 、
FeSe@SrTiO 3 /La 2 CuO 4 @LaSrCuO、
FeSe@SrTiO 3 /Bi 2 Te 3 @FeTe、
FeSe@SrTiO 3 /Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 、
MoGe@LaAlO 3 /La 2 CuO 4 @LaSrCuO、
MoGe@LaAlO 3 /Bi 2 Te 3 @FeTe、
MoGe@LaAlO 3 /Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 、
La 2 CuO 4 @LaSrCuO/Bi 2 Te 3 @FeTe、
La 2 CuO 4 @LaSrCuO/Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 or (b)
Bi 2 Te 3 @FeTe/Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 。
Further, the quantum hall conductive layer 107 is a multidimensional topological quantum dot structure formed by a ternary combination, and the ternary combination comprises:
FeSe@SrTiO 3 /MoGe@LaAlO 3 /La 2 CuO 4 @LaSrCuO、
FeSe@SrTiO 3 /MoGe@LaAlO 3 /Bi 2 Te 3 @FeTe、
FeSe@SrTiO 3 /MoGe@LaAlO 3 /Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 、
MoGe@LaAlO 3 /La 2 CuO 4 @LaSrCuO/Bi 2 Te 3 @FeTe、
MoGe@LaAlO 3 /La 2 CuO 4 @LaSrCuO/Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 or (b)
La 2 CuO 4 @LaSrCuO/Bi 2 Te 3 @FeTe/Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 。
Further, the quantum hall conductive layer 107 is a multi-dimensional topological quantum dot structure formed by quaternary combination, and the quaternary combination comprises:
FeSe@SrTiO 3 /MoGe@LaAlO 3 /La 2 CuO 4 @LaSrCuO/Bi 2 Te 3 @FeTe、
FeSe@SrTiO 3 /MoGe@LaAlO 3 /La 2 CuO 4 @LaSrCuO/Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 、
FeSe@SrTiO 3 /MoGe@LaAlO 3 /Bi2Te 3 @FeTe/Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 、
FeSe@SrTiO 3 /La 2 CuO 4 @LaSrCuO/Bi 2 Te 3 @FeTe/Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 or (b)
MoGe@LaAlO 3 /La 2 CuO 4 @LaSrCuO/Bi 2 Te 3 @FeTe/Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 。
Further, the quantum hall conductive layer 107 is a multidimensional topological quantum dot structure formed by five-membered combinations, and the five-membered combinations are:
FeSe@SrTiO 3 /MoGe@LaAlO 3 /La 2 CuO 4 @LaSrCuO/Bi 2 Te 3 @FeTe/Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 。
further, the thickness of the quantum hall conductive layer 107 is 5 to 5000 a.
Further, the active layer 103 is a periodic structure formed by a well layer and a barrier layer, and the number m of periods satisfies: 3. and m is more than or equal to 1.
Further, the well layer is InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Or BN, the thickness of which is 10 to 80 Emi; the barrier layer is InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga 2 O 3 Or BN, and the thickness of the BN is 10 to 120 angstroms.
Further, the lower confinement layer 101 is InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Or BN with a thickness of 50-5000 nm and a Si doping concentration of 1E 18-1E 20cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The lower waveguide layer 102 and the upper waveguide layer 104 are InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Or BN with a thickness of 50-1000 nm and a Si doping concentration of 1E 16-5E 19cm -3 。
Further, the electron blocking layer 105 and the upper confinement layer 106 are InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Or BN with thickness of 20-1000 nm and Mg doping concentration of 1E 18-1E 20cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The substrate 100 includes sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate 100, sapphire/AlN composite substrate 100, sapphire/SiNx, sapphire/SiO 2 Composite SiNx substrate 100, magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 Or LiGaO 2 Any of the composite substrates 100.
In this embodiment, the interfacial electron reconstruction of the quantum hall conductive layer 107 and the upper waveguide layer 104 and the electron blocking layer 105 forms a topological edge state polarized interface, which can accelerate hole mobility, enhance the transverse expansion and longitudinal injection efficiency of holes of the electron blocking layer 105, improve the hole injection efficiency and transportation of the active layer 103, and simultaneously can form strong spin orbit scattering, so that the conduction band generates spin splitting at the K-energy valley, enhance the bubble limit, induce unpaired quantum tunneling vortex-antispun vortex motion, improve quantum hall conductivity, further improve the transportation of holes at the active layer 103, and improve gain uniformity and peak gain, thereby improving the radiation recombination efficiency of the active layer 103 of the laser element, reducing the excitation threshold of the laser element, and improving the light power and slope efficiency of the laser element.
To further illustrate the technical advantages of the present invention, the performance of a laser fabricated by a semiconductor laser chip with a quantum hall conducting layer 107 provided by the present invention is compared with the performance of a conventional laser, and the specific data comparison is shown in the following table:
obviously, compared with the traditional laser, the slope of the laser prepared by the semiconductor laser chip provided by the invention is greatly improved, the threshold current density of the laser can be effectively reduced, and the optical power of the laser element is obviously improved.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that changes and modifications may be made without departing from the principles of the invention, such changes and modifications are also intended to be within the scope of the invention.
Claims (10)
1. A semiconductor laser chip with quantum Hall electric conduction layer comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electronic blocking layer and an upper limiting layer which are sequentially connected from bottom to top, and is characterized in that a quantum Hall electric conduction layer is arranged between the upper waveguide layer and the electronic blocking layer, and is FeSe@SrTiO 3 、MoGe@LaAlO 3 、La 2 CuO 4 @LaSrCuO、Bi 2 Te 3 @FeTe or Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 The multi-dimensional topological quantum dot structure is formed.
2. The semiconductor laser chip with quantum hall conducting layer according to claim 1, wherein the quantum hall conducting layer is a multi-dimensional topological quantum dot structure formed by binary combination, and the binary combination comprises:
FeSe@SrTiO 3 /MoGe@LaAlO 3 、
FeSe@SrTiO 3 /La 2 CuO 4 @LaSrCuO、
FeSe@SrTiO 3 /Bi 2 Te 3 @FeTe、
FeSe@SrTiO 3 /Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 、
MoGe@LaAlO 3 /La 2 CuO 4 @LaSrCuO、
MoGe@LaAlO 3 /Bi 2 Te 3 @FeTe、
MoGe@LaAlO 3 /Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 、
La 2 CuO 4 @LaSrCuO/Bi 2 Te 3 @FeTe、
La 2 CuO 4 @LaSrCuO/Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 or (b)
Bi 2 Te 3 @FeTe/Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 。
3. The semiconductor laser chip with quantum hall conducting layer according to claim 1, wherein the quantum hall conducting layer is a multi-dimensional topological quantum dot structure formed by ternary combination, and the ternary combination comprises:
FeSe@SrTiO 3 /MoGe@LaAlO 3 /La 2 CuO 4 @LaSrCuO、
FeSe@SrTiO 3 /MoGe@LaAlO 3 /Bi 2 Te 3 @FeTe、
FeSe@SrTiO 3 /MoGe@LaAlO 3 /Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 、
MoGe@LaAlO 3 /La 2 CuO 4 @LaSrCuO/Bi 2 Te 3 @FeTe、
MoGe@LaAlO 3 /La 2 CuO 4 @LaSrCuO/Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 or (b)
La 2 CuO 4 @LaSrCuO/Bi 2 Te 3 @FeTe/Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 。
4. The semiconductor laser chip with quantum hall conducting layer according to claim 1, wherein the quantum hall conducting layer is a multi-dimensional topological quantum dot structure formed by quaternary combination, and the quaternary combination comprises:
FeSe@SrTiO 3 /MoGe@LaAlO 3 /La 2 CuO 4 @LaSrCuO/Bi 2 Te 3 @FeTe、
FeSe@SrTiO 3 /MoGe@LaAlO 3 /La 2 CuO 4 @LaSrCuO/Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 、
FeSe@SrTiO 3 /MoGe@LaAlO 3 /Bi2Te 3 @FeTe/Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 、
FeSe@SrTiO 3 /La 2 CuO 4 @LaSrCuO/Bi 2 Te 3 @FeTe/Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 or (b)
MoGe@LaAlO 3 /La 2 CuO 4 @LaSrCuO/Bi 2 Te 3 @FeTe/Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 。
5. The semiconductor laser chip with the quantum hall electric conduction layer according to claim 1, wherein the quantum hall electric conduction layer is a multidimensional topological quantum dot structure formed by five-element combination, and the five-element combination is:
FeSe@SrTiO 3 /MoGe@LaAlO 3 /La 2 CuO 4 @LaSrCuO/Bi 2 Te 3 @FeTe/Bi 2 Sr 2 CaCu 2 O 8 @NbSe 2 。
6. a semiconductor laser chip having a quantum hall conducting layer according to any one of claims 1 to 5, wherein the quantum hall conducting layer has a thickness of 5 to 5000 a.
7. The semiconductor laser chip with the quantum hall conductive layer according to claim 6, wherein the active layer is a periodic structure formed by a well layer and a barrier layer, and the period number m is as follows: 3. and m is more than or equal to 1.
8. The semiconductor laser chip of claim 7, wherein the well layer is InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Or BN, the thickness of which is 10 to 80 Emi; the barrier layer is InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Or BN, and the thickness of the BN is 10 to 120 angstroms.
9. The semiconductor laser chip as claimed in claim 6, wherein the lower confinement layer is InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Or BN with a thickness of 50-5000 nm and a Si doping concentration of 1E 18-1E 20cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The lower and upper waveguide layers are InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga 2 O 3 Or BN with a thickness of 50-1000 nm and a Si doping concentration of 1E 16-5E 19cm -3 。
10. The semiconductor laser chip as claimed in claim 6, wherein the electron blocking layer and the upper confinement layer are InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Or BN with thickness of 20-1000 nm and Mg doping concentration of 1E 18-1E 20cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiNx, sapphire/SiO 2 SiNx composite substrate and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 Or LiGaO 2 Any one of the composite substrates.
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