CN117175351A - Semiconductor laser element with nonreciprocal topological laser oscillation layer - Google Patents
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- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims abstract description 118
- 229910004262 HgTe Inorganic materials 0.000 claims abstract description 96
- 229910005543 GaSe Inorganic materials 0.000 claims abstract description 93
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims abstract description 93
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Abstract
The application provides a semiconductor laser element with a non-reciprocal topological laser oscillation layer, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electronic blocking layer and an upper limiting layer which are sequentially arranged from bottom to top, wherein the non-reciprocal topological laser oscillation layer is arranged between the lower limiting layer and the lower waveguide layer and/or between the upper limiting layer and the upper waveguide layer, and is a multidimensional second order Mo Erchao lattice structure of any one or any combination of 2D-HfO2@3D-ZnO, 2D-Fe2O3@3D-ZnSe, 2D-SnO2@3D-PbS, 2D-V2O5@3D-ZnTeO, 2D-GaSe@3D-PbSe and 2D-CeO3@3D-HgTe. The application can improve the radiation recombination efficiency of the active layer of the laser element, reduce the excitation threshold of the laser element and improve the light power and slope efficiency of the laser element.
Description
Technical Field
The application relates to the field of semiconductor photoelectric devices, in particular to a semiconductor laser element with a non-reciprocal topological laser oscillation layer.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The laser has various types and various classification modes, and mainly comprises solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like.
The laser is largely different from the nitride semiconductor light emitting diode:
1) The laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level;
2) Use of lasers current densities up to KA/cm 2 More than 2 orders of magnitude higher than nitride light emitting diodes, thereby causing stronger electron leakage, more severe auger recombination, stronger polarization effect, more severe electron-hole mismatch, resulting in more severe efficiency decay Droop effect;
3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated;
4) The principle is different: the light emitting diode generates radiation composite luminescence by transferring electron holes to an active layer or a p-n junction under the action of external voltage, and the laser can perform lasing only when the lasing condition is satisfied, the inversion distribution of carriers in an active area is necessarily satisfied, the stimulated radiation oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss when the threshold condition is satisfied, and finally laser is output.
The nitride semiconductor laser has the following problems:
1) The absorption loss of the optical waveguide is high, inherent carbon impurities compensate acceptors in a p-type semiconductor, damage p-type and the like, the ionization rate of p-type doping is low, a large amount of unionized Mg acceptors impurities can cause the increase of internal optical loss, the refractive index dispersion of the laser is reduced along with the increase of wavelength, and the mode gain of the laser is reduced;
2) The thickness of the lower limiting layer is increased, so that the refractive index of the limiting layer can be reduced, but the thickness of the lower limiting layer is increased, so that the component regulation range is limited, and the problems of cracking, bending, quality reduction and the like are easily caused; meanwhile, standing waves formed by leakage of the light field mode to the substrate can cause low substrate mode suppression efficiency and poor FFP quality of far-field images;
3) The p-type semiconductor has the advantages that the Mg acceptor activation energy is large, the ionization efficiency is low, the hole concentration is far lower than the electron concentration, the hole mobility is far lower than the electron mobility, the quantum well polarization electric field promotes the problems that a hole injection barrier, the hole overflows an active layer and the like, the hole injection is uneven and the efficiency is low, the serious asymmetry mismatch of electron holes in the quantum well, the electron leakage and the carrier de-localization are caused, the hole transportation in the quantum well is more difficult, the carrier injection is uneven, the gain is uneven, meanwhile, the gain spectrum of the laser is widened, the peak gain is reduced, the threshold current of the laser is increased, and the slope efficiency is reduced.
Disclosure of Invention
In order to solve one of the technical problems, the application provides a semiconductor laser element with a non-reciprocal topology laser oscillation layer.
The embodiment of the application provides a semiconductor laser element with a non-reciprocal topological laser oscillation layer, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electronic blocking layer and an upper limiting layer which are sequentially arranged from bottom to top, wherein the non-reciprocal topological laser oscillation layer is arranged between the lower limiting layer and the lower waveguide layer and/or between the upper limiting layer and the upper waveguide layer, and the non-reciprocal topological laser oscillation layer is a multidimensional second order topological Mo Erchao lattice structure of any one or any combination of 2D-HfO2@3D-ZnO, 2D-Fe2O3@3D-ZnSe, 2D-SnO2@3D-PbS, 2D-V2O5@3D-ZnTeO, 2D-GaSe@3D-PbSe and 2D-CeO3@3D-HgTe.
Preferably, the non-reciprocal topological laser oscillation layer comprises a multidimensional second order topological Mo Erchao lattice structure of the following binary combination:
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe,
2D-HfO2@3D-ZnO/2D-SnO2@3D-PbS,
2D-HfO2@3D-ZnO/2D-V2O5@3D-ZnTeO,
2D-HfO2@3D-ZnO/2D-GaSe@3D-PbSe,
2D-HfO2@3D-ZnO/2D-CeO3@3D-HgTe,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS,
2D-Fe2O3@3D-ZnSe/2D-V2O5@3D-ZnTeO,
2D-Fe2O3@3D-ZnSe/2D-GaSe@3D-PbSe,
2D-Fe2O3@3D-ZnSe/2D-CeO3@3D-HgTe,
2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO,
2D-SnO2@3D-PbS/2D-GaSe@3D-PbSe,
2D-SnO2@3D-PbS/2D-CeO3@3D-HgTe,
2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe,
2D-V2O5@3D-ZnTeO/2D-CeO3@3D-HgTe,
2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe。
preferably, the non-reciprocal topological laser oscillation layer comprises a multidimensional second order topological Mo Erchao lattice structure of the following ternary combination:
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-V2O5@3D-ZnTeO,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-GaSe@3D-PbSe,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-CeO3@3D-HgTe,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-GaSe@3D-PbSe,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-CeO3@3D-HgTe,
2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe,
2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-CeO3@3D-HgTe,
2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe。
preferably, the non-reciprocal topological laser oscillation layer comprises a multidimensional second order topological Mo Erchao lattice structure with the following quaternary combination:
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-GaSe@3D-PbSe,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-CeO3@3D-HgTe,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-CeO3@3D-HgTe,
2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe。
preferably, the non-reciprocal topological laser oscillation layer comprises a multidimensional second-order topological Mo Erchao lattice structure of the following five-membered combination:
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-CeO3@3D-HgTe,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe,
2D-HfO2@3D-ZnO/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe。
preferably, the non-reciprocal topological laser oscillation layer comprises a multidimensional second-order topological Mo Erchao lattice structure of the following six-element combination:
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe。
preferably, the thickness of the non-reciprocal topology laser oscillation layer is 5nm to 500nm.
Preferably, the active layer is a periodic structure consisting of a well layer and a barrier layer, the period number is 3-1, the well layer is any one or any combination of InGaN, inN, alInN, gaN, the thickness is 10-80A, the barrier layer is any one or any combination of GaN, alGaN, alInGaN, alN, alInN, and the thickness is 10-120A.
Preferably, the lower limiting layer is any one or any combination of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, has a thickness of 50nm to 5000nm and a Si doping concentration of 1E18cm -3 To 1E20cm -3 ；
The lower waveguide layer and the upper waveguide layer are any one or any combination of GaN, inGaN, alInGaN, the thickness is 50nm to 1000nm, and the doping concentration of Si is 1E16cm -3 To 5E19 cm -3 ；
The electron blocking layer and the upper limiting layer are any one or any combination of GaN, alGaN, alInGaN, alN, alInN, the thickness is 20nm to 1000nm, and the doping concentration of Mg is 1E18cm -3 To 1E20cm -3 。
Preferably, the substrate comprises sapphire, silicon, ge, siC, alN, gaN, mo, cu, cuW, tiW, diamond, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiNx, sapphire/SiO 2 SiNx composite substrate and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
The beneficial effects of the application are as follows: the application sets the nonreciprocal topological oscillation layer in the semiconductor laser element, so that the nonreciprocal topological oscillation layer forms a photon structure and a unidirectional photon band gap edge state between specific topological invariants between the interfaces of the nonreciprocal topological oscillation layer and the upper limiting layer, the upper waveguide layer and/or the lower limiting layer and the lower waveguide layer. The nonreciprocal property of photons and phonons is enhanced through the non-diagonal dielectric tensor regulation and control, stimulated radiation laser of an active layer is coupled to specific waveguide output, internal optical loss is restrained, and the mode gain of a laser element is improved. Meanwhile, the coupling intensity of laser is regulated and controlled, the polarization intensity is improved through exciton emission, hole ionization and hybridization are induced, a polaron pumping laser effect is formed, the laser pumping efficiency is improved, the light field mode leakage is restrained, the FFP quality of far-field images is improved, the quality factor of light beams is improved, the radiation recombination efficiency of an active layer of a laser element is improved, the excitation threshold value of the laser element is reduced, and the light power and slope efficiency of the laser element are improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute a limitation on the application. In the drawings:
fig. 1 is a schematic structural diagram of a semiconductor laser device with a non-reciprocal topology laser oscillation layer according to embodiment 1 of the present application;
fig. 2 is a schematic structural diagram of a semiconductor laser device with a non-reciprocal topology laser oscillation layer according to embodiment 2 of the present application;
fig. 3 is a schematic structural diagram of a semiconductor laser device with a non-reciprocal topology laser oscillation layer according to embodiment 3 of the present application.
Reference numerals:
100. a substrate, 101, a lower confinement layer, 102, a lower waveguide layer, 103, an active layer, 104, an upper waveguide layer, 105, an electron blocking layer, 106, an upper confinement layer, 107, and a non-reciprocal topology laser oscillation layer.
Detailed Description
In order to make the technical solutions and advantages of the embodiments of the present application more apparent, the following detailed description of exemplary embodiments of the present application is provided in conjunction with the accompanying drawings, and it is apparent that the described embodiments are only some embodiments of the present application and not exhaustive of all embodiments. It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other.
Example 1
As shown in fig. 1, the present embodiment proposes a semiconductor laser element having a non-reciprocal topology laser oscillation layer, including a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106, which are disposed in this order from bottom to top. Wherein a non-reciprocal topology laser oscillation layer 107 is provided between the lower confinement layer 101 and the lower waveguide layer 102.
Specifically, in the present embodiment, the semiconductor laser element is provided with a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 in this order from bottom to top. A non-reciprocal topology laser oscillation layer 107 is disposed between the lower confinement layer 101 and the lower waveguide layer 102. The thickness of the non-reciprocal topology laser oscillation layer 107 is 5nm to 500nm. The nonreciprocal topology laser oscillation layer 107 may form a photonic structure with the interface of the lower confinement layer 101 and the lower waveguide layer 102 and a unidirectional photonic bandgap edge state between specific topology invariants.
More specifically, in this embodiment, the non-reciprocal topology laser oscillation layer 107 has a multi-dimensional second-order topology Mo Erchao lattice structure, which is any one or any combination of 2D-hfo2@3d-ZnO, 2D-fe2o3@3d-ZnSe, 2D-sno2@3d-PbS, 2D-v2o5@3d-ZnTeO, 2D-gase@3d-PbSe, and 2D-ceo3@3d-HgTe, and the specific structural combination of the non-reciprocal topology laser oscillation layer 107 in this embodiment is described in detail below.
The non-reciprocal topology laser oscillation layer 107 of the present embodiment may be a multidimensional second-order topology Mo Erchao lattice structure formed by binary combination, and specifically may be one of the following multidimensional second-order topology Mo Erchao lattice structures formed by binary combination:
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe,
2D-HfO2@3D-ZnO/2D-SnO2@3D-PbS,
2D-HfO2@3D-ZnO/2D-V2O5@3D-ZnTeO,
2D-HfO2@3D-ZnO/2D-GaSe@3D-PbSe,
2D-HfO2@3D-ZnO/2D-CeO3@3D-HgTe,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS,
2D-Fe2O3@3D-ZnSe/2D-V2O5@3D-ZnTeO,
2D-Fe2O3@3D-ZnSe/2D-GaSe@3D-PbSe,
2D-Fe2O3@3D-ZnSe/2D-CeO3@3D-HgTe,
2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO,
2D-SnO2@3D-PbS/2D-GaSe@3D-PbSe,
2D-SnO2@3D-PbS/2D-CeO3@3D-HgTe,
2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe,
2D-V2O5@3D-ZnTeO/2D-CeO3@3D-HgTe,
2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe。
the non-reciprocal topology laser oscillation layer 107 of the present embodiment may be a multi-dimensional second-order topology Mo Erchao lattice structure composed of three-dimensional combinations, and specifically may be one of the following multi-dimensional second-order topology Mo Erchao lattice structures composed of three-dimensional combinations:
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-V2O5@3D-ZnTeO,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-GaSe@3D-PbSe,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-CeO3@3D-HgTe,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-GaSe@3D-PbSe,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-CeO3@3D-HgTe,
2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe,
2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-CeO3@3D-HgTe,
2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe。
the non-reciprocal topology laser oscillation layer 107 of the present embodiment may be a multi-dimensional second-order topology Mo Erchao lattice structure formed by quaternary combination, and specifically may be one of the following multi-dimensional second-order topology Mo Erchao lattice structures formed by quaternary combination:
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-GaSe@3D-PbSe,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-CeO3@3D-HgTe,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-CeO3@3D-HgTe,
2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe。
the non-reciprocal topological laser oscillation layer 107 of the present embodiment may be a multi-dimensional second-order topological Mo Erchao lattice structure composed of five-elements, and specifically may be one of the following multi-dimensional second-order topological Mo Erchao lattice structures composed of five elements:
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-CeO3@3D-HgTe,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe,
2D-HfO2@3D-ZnO/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe。
the non-reciprocal topological laser oscillation layer 107 of the present embodiment may have a multidimensional second-order topological Mo Erchao lattice structure composed of six elements, and specifically may be:
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe。
in the embodiment, the nonreciprocal property of photons and phonons is enhanced through the non-diagonal dielectric tensor regulation magneto-optical effect, stimulated radiation laser of the active layer 103 is coupled to specific waveguide output, internal optical loss is restrained, and the mode gain of the laser element is improved. Meanwhile, the coupling strength of laser is regulated and controlled, the polarization strength is improved through exciton emission, hole ionization and hybridization are induced, a polaron pumping laser effect is formed, the laser pumping efficiency is improved, the light field mode leakage is restrained, the FFP quality of far-field images is improved, the beam quality factor is improved, the radiation recombination efficiency of the active layer 103 of the laser element is improved, the excitation threshold of the laser element is reduced, and the light power and slope efficiency of the laser element are improved.
Further, the active layer 103 in this embodiment is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3 not less than m not less than 1, the well layer is any one or any combination of InGaN, inN, alInN, gaN, the thickness is 10 to 80 a, the barrier layer is any one or any combination of GaN, alGaN, alInGaN, alN, alInN, and the thickness is 10 to 120 a.
The lower confinement layer 101 is GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, has a thickness of 50nm to 5000nm, and has a Si doping concentration of 1E18cm -3 To 1E20cm -3 。
The lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of GaN, inGaN, alInGaN, have a thickness of 50nm to 1000nm and a Si doping concentration of 1E16cm -3 To 5E19 cm -3 。
The electron blocking layer 105 and the upper confinement layer 106 are GaN, alGaN, alInGaN, alN, alInN, and have a thickness of 20nm to 1000nm and a Mg doping concentration of 1E18cm -3 To 1E20cm -3 。
The substrate 100 includes sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiNx, sapphire/SiO 2 SiNx composite substrate and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
Example 2
As shown in fig. 2, the present embodiment proposes a semiconductor laser element having a non-reciprocal topology laser oscillation layer, including a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106, which are disposed in this order from bottom to top. Wherein a non-reciprocal topology laser oscillation layer 107 is provided between the upper confinement layer 106 and the upper waveguide layer 104.
Specifically, in the present embodiment, the semiconductor laser element is provided with a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 in this order from bottom to top. A non-reciprocal topology laser oscillation layer 107 is disposed between the upper confinement layer 106 and the upper waveguide layer 104. The thickness of the non-reciprocal topology laser oscillation layer 107 is 5nm to 500nm. The nonreciprocal topology laser oscillation layer 107 may form a photonic structure with the interface of the upper confinement layer 106 and the upper waveguide layer 104 and a unidirectional photonic bandgap edge state between specific topology invariants.
More specifically, in this embodiment, the non-reciprocal topology laser oscillation layer 107 has a multi-dimensional second-order topology Mo Erchao lattice structure, which is any one or any combination of 2D-hfo2@3d-ZnO, 2D-fe2o3@3d-ZnSe, 2D-sno2@3d-PbS, 2D-v2o5@3d-ZnTeO, 2D-gase@3d-PbSe, and 2D-ceo3@3d-HgTe, and the specific structural combination of the non-reciprocal topology laser oscillation layer 107 in this embodiment is described in detail below.
The non-reciprocal topology laser oscillation layer 107 of the present embodiment may be a multidimensional second-order topology Mo Erchao lattice structure formed by binary combination, and specifically may be one of the following multidimensional second-order topology Mo Erchao lattice structures formed by binary combination:
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe,
2D-HfO2@3D-ZnO/2D-SnO2@3D-PbS,
2D-HfO2@3D-ZnO/2D-V2O5@3D-ZnTeO,
2D-HfO2@3D-ZnO/2D-GaSe@3D-PbSe,
2D-HfO2@3D-ZnO/2D-CeO3@3D-HgTe,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS,
2D-Fe2O3@3D-ZnSe/2D-V2O5@3D-ZnTeO,
2D-Fe2O3@3D-ZnSe/2D-GaSe@3D-PbSe,
2D-Fe2O3@3D-ZnSe/2D-CeO3@3D-HgTe,
2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO,
2D-SnO2@3D-PbS/2D-GaSe@3D-PbSe,
2D-SnO2@3D-PbS/2D-CeO3@3D-HgTe,
2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe,
2D-V2O5@3D-ZnTeO/2D-CeO3@3D-HgTe,
2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe。
the non-reciprocal topology laser oscillation layer 107 of the present embodiment may be a multi-dimensional second-order topology Mo Erchao lattice structure composed of three-dimensional combinations, and specifically may be one of the following multi-dimensional second-order topology Mo Erchao lattice structures composed of three-dimensional combinations:
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-V2O5@3D-ZnTeO,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-GaSe@3D-PbSe,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-CeO3@3D-HgTe,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-GaSe@3D-PbSe,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-CeO3@3D-HgTe,
2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe,
2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-CeO3@3D-HgTe,
2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe。
the non-reciprocal topology laser oscillation layer 107 of the present embodiment may be a multi-dimensional second-order topology Mo Erchao lattice structure formed by quaternary combination, and specifically may be one of the following multi-dimensional second-order topology Mo Erchao lattice structures formed by quaternary combination:
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-GaSe@3D-PbSe,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-CeO3@3D-HgTe,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-CeO3@3D-HgTe,
2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe。
the non-reciprocal topological laser oscillation layer 107 of the present embodiment may be a multi-dimensional second-order topological Mo Erchao lattice structure composed of five-elements, and specifically may be one of the following multi-dimensional second-order topological Mo Erchao lattice structures composed of five elements:
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-CeO3@3D-HgTe,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe,
2D-HfO2@3D-ZnO/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe。
the non-reciprocal topological laser oscillation layer 107 of the present embodiment may have a multidimensional second-order topological Mo Erchao lattice structure composed of six elements, and specifically may be:
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe。
in the embodiment, the nonreciprocal property of photons and phonons is enhanced through the non-diagonal dielectric tensor regulation magneto-optical effect, stimulated radiation laser of the active layer 103 is coupled to specific waveguide output, internal optical loss is restrained, and the mode gain of the laser element is improved. Meanwhile, the coupling strength of laser is regulated and controlled, the polarization strength is improved through exciton emission, hole ionization and hybridization are induced, a polaron pumping laser effect is formed, the laser pumping efficiency is improved, the light field mode leakage is restrained, the FFP quality of far-field images is improved, the beam quality factor is improved, the radiation recombination efficiency of the active layer 103 of the laser element is improved, the excitation threshold of the laser element is reduced, and the light power and slope efficiency of the laser element are improved.
Further, the active layer 103 in this embodiment is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3 not less than m not less than 1, the well layer is any one or any combination of InGaN, inN, alInN, gaN, the thickness is 10 to 80 a, the barrier layer is any one or any combination of GaN, alGaN, alInGaN, alN, alInN, and the thickness is 10 to 120 a.
The lower confinement layer 101 is GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, has a thickness of 50nm to 5000nm, and has a Si doping concentration of 1E18cm -3 To 1E20cm -3 。
The lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of GaN, inGaN, alInGaN, have a thickness of 50nm to 1000nm and a Si doping concentration of 1E16cm -3 To 5E19 cm -3 。
The electron blocking layer 105 and the upper confinement layer 106 are GaN, alGaN, alInGaN, alN, alInN, and have a thickness of 20nm to 1000nm and a Mg doping concentration of 1E18cm -3 To 1E20cm -3 。
The substrate 100 includes sapphire, silicon, ge, siC, alN, gaN, gaAs, mo, cu, cuW, tiW, diamond, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiNx, sapphire/SiO 2 SiNx composite substrate and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
Example 3
As shown in fig. 1, the present embodiment proposes a semiconductor laser element having a non-reciprocal topology laser oscillation layer, including a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106, which are disposed in this order from bottom to top. A non-reciprocal topology laser oscillation layer 107 is disposed between the lower confinement layer 101 and the lower waveguide layer 102, and between the upper confinement layer 106 and the upper waveguide layer 104.
Specifically, in the present embodiment, the semiconductor laser element is provided with a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106 in this order from bottom to top. A non-reciprocal topology laser oscillation layer 107 is disposed between the lower confinement layer 101 and the lower waveguide layer 102 and between the upper confinement layer 106 and the upper waveguide layer 104. The thickness of the non-reciprocal topology laser oscillation layer 107 is 5nm to 500nm. The nonreciprocal topology laser oscillation layer 107 may form a photonic structure with the interfaces of the lower confinement layer 101 and the lower waveguide layer 102, and the upper confinement layer 106 and the upper waveguide layer 104, as well as unidirectional photonic bandgap edge states between specific topology invariants.
More specifically, in this embodiment, the non-reciprocal topology laser oscillation layer 107 has a multi-dimensional second-order topology Mo Erchao lattice structure, which is any one or any combination of 2D-hfo2@3d-ZnO, 2D-fe2o3@3d-ZnSe, 2D-sno2@3d-PbS, 2D-v2o5@3d-ZnTeO, 2D-gase@3d-PbSe, and 2D-ceo3@3d-HgTe, and the specific structural combination of the non-reciprocal topology laser oscillation layer 107 in this embodiment is described in detail below.
The non-reciprocal topology laser oscillation layer 107 of the present embodiment may be a multidimensional second-order topology Mo Erchao lattice structure formed by binary combination, and specifically may be one of the following multidimensional second-order topology Mo Erchao lattice structures formed by binary combination:
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe,
2D-HfO2@3D-ZnO/2D-SnO2@3D-PbS,
2D-HfO2@3D-ZnO/2D-V2O5@3D-ZnTeO,
2D-HfO2@3D-ZnO/2D-GaSe@3D-PbSe,
2D-HfO2@3D-ZnO/2D-CeO3@3D-HgTe,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS,
2D-Fe2O3@3D-ZnSe/2D-V2O5@3D-ZnTeO,
2D-Fe2O3@3D-ZnSe/2D-GaSe@3D-PbSe,
2D-Fe2O3@3D-ZnSe/2D-CeO3@3D-HgTe,
2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO,
2D-SnO2@3D-PbS/2D-GaSe@3D-PbSe,
2D-SnO2@3D-PbS/2D-CeO3@3D-HgTe,
2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe,
2D-V2O5@3D-ZnTeO/2D-CeO3@3D-HgTe,
2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe。
the non-reciprocal topology laser oscillation layer 107 of the present embodiment may be a multi-dimensional second-order topology Mo Erchao lattice structure composed of three-dimensional combinations, and specifically may be one of the following multi-dimensional second-order topology Mo Erchao lattice structures composed of three-dimensional combinations:
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-V2O5@3D-ZnTeO,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-GaSe@3D-PbSe,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-CeO3@3D-HgTe,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-GaSe@3D-PbSe,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-CeO3@3D-HgTe,
2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe,
2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-CeO3@3D-HgTe,
2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe。
the non-reciprocal topology laser oscillation layer 107 of the present embodiment may be a multi-dimensional second-order topology Mo Erchao lattice structure formed by quaternary combination, and specifically may be one of the following multi-dimensional second-order topology Mo Erchao lattice structures formed by quaternary combination:
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-GaSe@3D-PbSe,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-CeO3@3D-HgTe,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-CeO3@3D-HgTe,
2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe。
the non-reciprocal topological laser oscillation layer 107 of the present embodiment may be a multi-dimensional second-order topological Mo Erchao lattice structure composed of five-elements, and specifically may be one of the following multi-dimensional second-order topological Mo Erchao lattice structures composed of five elements:
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-CeO3@3D-HgTe,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe,
2D-HfO2@3D-ZnO/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe。
the non-reciprocal topological laser oscillation layer 107 of the present embodiment may have a multidimensional second-order topological Mo Erchao lattice structure composed of six elements, and specifically may be:
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe。
in the embodiment, the nonreciprocal property of photons and phonons is enhanced through the non-diagonal dielectric tensor regulation magneto-optical effect, stimulated radiation laser of the active layer 103 is coupled to specific waveguide output, internal optical loss is restrained, and the mode gain of the laser element is improved. Meanwhile, the coupling strength of laser is regulated and controlled, the polarization strength is improved through exciton emission, hole ionization and hybridization are induced, a polaron pumping laser effect is formed, the laser pumping efficiency is improved, the light field mode leakage is restrained, the FFP quality of far-field images is improved, the beam quality factor is improved, the radiation recombination efficiency of the active layer 103 of the laser element is improved, the excitation threshold of the laser element is reduced, and the light power and slope efficiency of the laser element are improved.
Further, the active layer 103 in this embodiment is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3 not less than m not less than 1, the well layer is any one or any combination of InGaN, inN, alInN, gaN, the thickness is 10 to 80 a, the barrier layer is any one or any combination of GaN, alGaN, alInGaN, alN, alInN, and the thickness is 10 to 120 a.
The lower confinement layer 101 is GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, has a thickness of 50nm to 5000nm, and has a Si doping concentration of 1E18cm -3 To 1E20cm -3 。
The lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of GaN, inGaN, alInGaN, have a thickness of 50nm to 1000nm and a Si doping concentration of 1E16cm -3 To 5E19 cm -3 。
The electron blocking layer 105 and the upper confinement layer 106 are GaN, alGaN, alInGaN, alN, alInN, and have a thickness of 20nm to 1000nm and a Mg doping concentration of 1E18cm -3 To 1E20cm -3 。
The substrate 100 includes sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiNx, sapphire/SiO 2 SiNx composite substrate and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
The following table shows the comparison of the performance parameters of the semiconductor laser device proposed in this embodiment and the conventional semiconductor laser device:
it can be seen that the semiconductor laser device according to the present embodiment can improve the radiation recombination efficiency of the active layer 103 of the laser device, reduce the excitation threshold of the laser device, and improve the optical power and slope efficiency of the laser device.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present application without departing from the spirit or scope of the application. Thus, it is intended that the present application also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (10)
1. The semiconductor laser element with the non-reciprocal topological laser oscillation layer comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer which are sequentially arranged from bottom to top, and is characterized in that the non-reciprocal topological laser oscillation layer is arranged between the lower limiting layer and the lower waveguide layer and/or between the upper limiting layer and the upper waveguide layer, and the non-reciprocal topological laser oscillation layer is a multidimensional second-order Mo Erchao lattice structure of any one or any combination of 2D-HfO2@3D-ZnO, 2D-Fe2O3@3D-ZnSe, 2D-SnO2@3D-PbS, 2D-V2O5@3D-ZnTeO, 2D-GaSe@3D-PbSe and 2D-CeO3@3D-HgTe.
2. The semiconductor laser device of claim 1, wherein the non-reciprocal topological laser oscillation layer comprises a multidimensional second order topological Mo Erchao lattice structure of the binary combination of:
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe,
2D-HfO2@3D-ZnO/2D-SnO2@3D-PbS,
2D-HfO2@3D-ZnO/2D-V2O5@3D-ZnTeO,
2D-HfO2@3D-ZnO/2D-GaSe@3D-PbSe,
2D-HfO2@3D-ZnO/2D-CeO3@3D-HgTe,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS,
2D-Fe2O3@3D-ZnSe/2D-V2O5@3D-ZnTeO,
2D-Fe2O3@3D-ZnSe/2D-GaSe@3D-PbSe,
2D-Fe2O3@3D-ZnSe/2D-CeO3@3D-HgTe,
2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO,
2D-SnO2@3D-PbS/2D-GaSe@3D-PbSe,
2D-SnO2@3D-PbS/2D-CeO3@3D-HgTe,
2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe,
2D-V2O5@3D-ZnTeO/2D-CeO3@3D-HgTe,
2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe。
3. the semiconductor laser element of claim 1, wherein the non-reciprocal topological laser oscillation layer comprises a multidimensional second order topological Mo Erchao lattice structure of the following ternary combination:
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-V2O5@3D-ZnTeO,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-GaSe@3D-PbSe,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-CeO3@3D-HgTe,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-GaSe@3D-PbSe,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-CeO3@3D-HgTe,
2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe,
2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-CeO3@3D-HgTe,
2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe。
4. the semiconductor laser element of claim 1, wherein the non-reciprocal topological laser oscillation layer comprises a multi-dimensional second order topological Mo Erchao lattice structure of the quaternary combination of:
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-GaSe@3D-PbSe,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-CeO3@3D-HgTe,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-CeO3@3D-HgTe,
2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe。
5. the semiconductor laser device according to claim 1, wherein the nonreciprocal topological laser oscillation layer includes a multidimensional second-order topological Mo Erchao lattice structure of a five-membered combination of:
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-CeO3@3D-HgTe,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe,
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe,
2D-HfO2@3D-ZnO/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe,
2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe。
6. the semiconductor laser device of claim 1, wherein the non-reciprocal topological laser oscillation layer comprises a multi-dimensional second order topological Mo Erchao lattice structure of a six-dimensional combination of:
2D-HfO2@3D-ZnO/2D-Fe2O3@3D-ZnSe/2D-SnO2@3D-PbS/2D-V2O5@3D-ZnTeO/2D-GaSe@3D-PbSe/2D-CeO3@3D-HgTe。
7. the semiconductor laser element according to claim 1, wherein a thickness of the non-reciprocal topology laser oscillation layer is 5nm to 500nm.
8. The semiconductor laser device according to claim 1, wherein the active layer has a periodic structure comprising a well layer and a barrier layer, the number of periods is 3.gtoreq.m.gtoreq.1, the well layer is any one or any combination of InGaN, inN, alInN, gaN, the thickness is 10 to 80 a/m, the barrier layer is any one or any combination of GaN, alGaN, alInGaN, alN, alInN, and the thickness is 10 to 120 a/m.
9. The semiconductor laser device according to claim 1, wherein the lower confinement layer is one or a combination of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, has a thickness of 50nm to 5000nm, and has a Si doping concentration of 1E18cm -3 To 1E20cm -3 ；
The lower waveguide layer and the upper waveguide layer are any one or any combination of GaN, inGaN, alInGaN, the thickness is 50nm to 1000nm, and the doping concentration of Si is 1E16cm -3 To 5E19 cm -3 ；
The electron blocking layer and the upper limiting layer are any one or any combination of GaN, alGaN, alInGaN, alN, alInN, the thickness is 20nm to 1000nm, and the doping concentration of Mg is 1E18cm -3 To 1E20cm -3 。
10. The semiconductor laser device as claimed in claim 1, wherein the substrate comprises sapphire, silicon, ge, mo, cu, cuW, tiW, diamond, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiNx, sapphire/SiO 2 SiNx composite substrate and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
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