CN117526089A - GaN-based semiconductor laser chip - Google Patents
GaN-based semiconductor laser chip Download PDFInfo
- Publication number
- CN117526089A CN117526089A CN202311461349.0A CN202311461349A CN117526089A CN 117526089 A CN117526089 A CN 117526089A CN 202311461349 A CN202311461349 A CN 202311461349A CN 117526089 A CN117526089 A CN 117526089A
- Authority
- CN
- China
- Prior art keywords
- waveguide layer
- layer
- gan
- equal
- sub
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000009826 distribution Methods 0.000 claims abstract description 22
- 229910052594 sapphire Inorganic materials 0.000 claims description 16
- 239000010980 sapphire Substances 0.000 claims description 16
- 239000002131 composite material Substances 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 8
- 238000012885 constant function Methods 0.000 claims description 6
- 229910010093 LiAlO Inorganic materials 0.000 claims description 4
- 229910020068 MgAl Inorganic materials 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052596 spinel Inorganic materials 0.000 claims description 4
- 239000011029 spinel Substances 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 abstract description 10
- 238000005336 cracking Methods 0.000 abstract description 4
- 230000009467 reduction Effects 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000000370 acceptor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000001819 mass spectrum Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 101100425816 Dictyostelium discoideum top2mt gene Proteins 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 101150082896 topA gene Proteins 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000005472 transition radiation Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention provides a GaN-based semiconductor laser chip, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top, wherein the upper waveguide layer and the lower waveguide layer have different refractive index distribution. According to the invention, by arranging different refractive index distributions on the upper waveguide layer and the lower waveguide layer, the internal optical loss of the semiconductor laser can be effectively restrained, the limiting factor is improved, the mode gain of the laser is further improved, the problems of cracking and quality reduction caused by the thickness of the lower limiting layer or the increase of Al components are reduced, the light field dissipation is restrained, the probability of leakage of a light field mode to a substrate is reduced, and the far field quality and the light beam quality factor are improved.
Description
Technical Field
The present application relates to the field of semiconductor optoelectronic devices, and in particular, to a GaN-based semiconductor laser chip.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The laser has various types and various classification modes, and mainly comprises solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like.
The laser is largely different from the nitride semiconductor light emitting diode:
1) The laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level;
2) Use of lasers current densities up to KA/cm 2 More than 2 orders of magnitude higher than nitride light emitting diodes, thereby causing stronger electron leakage, more severe auger recombination, stronger polarization effect, more severe electron-hole mismatch, resulting in more severe efficiency decay Droop effect;
3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated;
4) The principle is different: the light emitting diode generates radiation composite luminescence by transferring electron holes to an active layer or a p-n junction under the action of external voltage, and the laser can perform lasing only when the lasing condition is satisfied, the inversion distribution of carriers in an active area is necessarily satisfied, the stimulated radiation oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss when the threshold condition is satisfied, and finally laser is output.
The nitride semiconductor laser has the following problems:
1) The absorption loss of the optical waveguide is high, inherent carbon impurities compensate acceptors in a p-type semiconductor, damage p-type and the like, the ionization rate of p-type doping is low, a large amount of unionized Mg acceptors impurities can cause the increase of internal optical loss, the refractive index dispersion of the laser is realized, the fluctuation of the concentration of high-concentration carriers influences the refractive index of an active layer, the limiting factor is reduced along with the increase of wavelength, and the mode gain of the laser is reduced;
2) The thickness of the lower limiting layer is increased, so that the refractive index of the limiting layer can be reduced, but the thickness of the lower limiting layer is increased, so that the component regulation range is limited, and the problems of cracking, bending, quality reduction and the like are easily caused; meanwhile, the optical field is dissipated, the optical field mode leaks to the substrate to form standing waves, so that the substrate mode suppression efficiency is low, and the FFP quality of the far-field image is poor.
Disclosure of Invention
In order to solve one of the technical problems, the invention provides a GaN-based semiconductor laser chip.
The embodiment of the invention provides a GaN-based semiconductor laser chip, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top, wherein the upper waveguide layer and the lower waveguide layer have different refractive index distribution.
Preferably, the refractive index of the upper waveguide layer has a function y=log a x (1 < a) curve distribution.
Preferably, the lower waveguide layer includes a first sub lower waveguide layer, a second sub lower waveguide layer and a third sub lower waveguide layer sequentially disposed from bottom to top, and the first sub lower waveguide layer, the second sub lower waveguide layer and the third sub lower waveguide layer have different refractive index distributions.
Preferably, the refractive index of the first sub-lower waveguide layer has a constant function y=c1 distribution, the refractive index of the second sub-lower waveguide layer has a constant function y=c2 distribution, and the third sub-lower waveguide layer has a function y=dx 2 +fx+g distribution, where d < 0, C1 < C2.
Preferably, the upper waveguide layer is any one or any combination of GaN, inGaN, inN, and the thickness of the upper waveguide layer is l: l is more than or equal to 10 and less than or equal to 5000.
Preferably, the lower waveguide layer is any one or any combination of GaN, inGaN, inN, and the thickness of the first sub-lower waveguide layer is m: m is more than or equal to 40 and less than or equal to 9000, and the thickness of the second sub-lower waveguide layer is n: n is more than or equal to 20 and less than or equal to 6000, and the thickness of the third sub-lower waveguide layer is k: k is more than or equal to 5 and less than or equal to 500.
Preferably, the active layer is a quantum well formed by a well layer and a barrier layer, and the quantum well period is w: w is more than or equal to 1 and less than or equal to 2, and the active layer is any one or any combination of InGaN, gaN, alInN, alInGaN, alGaN, inN, alN; the thickness of the well layer of the active layer is p: p is more than or equal to 5 and less than or equal to 100, and the thickness of the barrier layer is equal to the thickness q: q is more than or equal to 10 and less than or equal to 200.
Preferably, the lower confinement layer is any one or any combination of AlInGaN, alInN, alGaN, inGaN and GaN, and has a thickness of 10 to 90000 angstroms.
Preferably, the upper confinement layer is any one or any combination of AlInGaN, alInN, alGaN and has a thickness of 10 to 9000 angstroms.
Preferably, the substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
The beneficial effects of the invention are as follows: according to the invention, by arranging different refractive index distributions on the upper waveguide layer and the lower waveguide layer, the internal optical loss of the semiconductor laser can be effectively restrained, the limiting factor is improved, the mode gain of the laser is further improved, the problems of cracking and quality reduction caused by the thickness of the lower limiting layer or the increase of Al components are reduced, the light field dissipation is restrained, the probability of leakage of a light field mode to a substrate is reduced, and the far field quality and the light beam quality factor are improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute an undue limitation to the application. In the drawings:
fig. 1 is a schematic diagram of a GaN-based semiconductor laser chip according to embodiment 1 of the invention;
fig. 2 is a schematic structural diagram of a GaN-based semiconductor laser chip according to embodiment 2 of the invention;
fig. 3 is a SIMS secondary ion mass spectrum of a GaN-based semiconductor laser chip according to example 2 of the present invention;
fig. 4 is a partial SIMS secondary ion mass spectrum of a GaN-based semiconductor laser chip according to example 2 of the present invention.
Reference numerals:
100. a substrate, 101, a lower confinement layer, 102, a lower waveguide layer, 103, an active layer, 104, an upper waveguide layer, 105, an upper confinement layer;
102a, first sub-lower waveguide layer, 102b, second sub-lower waveguide layer, 102c, third sub-lower waveguide layer.
Detailed Description
In order to make the technical solutions and advantages of the embodiments of the present application more apparent, the following detailed description of exemplary embodiments of the present application is given with reference to the accompanying drawings, and it is apparent that the described embodiments are only some of the embodiments of the present application and not exhaustive of all the embodiments. It should be noted that, in the case of no conflict, the embodiments and features in the embodiments may be combined with each other.
Example 1
As shown in fig. 1, the present embodiment proposes a GaN-based semiconductor laser chip including a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105, which are disposed in this order from bottom to top. Wherein a specific refractive index profile is designed in the upper waveguide layer 104.
Specifically, in the present embodiment, the GaN-based semiconductor laser chip is provided with the substrate 100, the lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, and the upper confinement layer 105 in this order from bottom to top. Refractive index profile with a specific design in the upper waveguide layer 104, in particular with a function y=log a x (1 < a) curve distribution.
Refractive index refers to the ratio of the propagation speed of light in vacuum to the propagation speed of light in the medium. The higher the refractive index of the material, the greater the ability to refract incident light. The specific refractive index distribution of the implementation can effectively inhibit internal optical loss, and improve the limiting factor, so that the mode gain of the laser is improved.
Further, the upper waveguide layer 104 is any one or any combination of GaN, inGaN, inN, and the thickness of the upper waveguide layer 104 is l: l is more than or equal to 10 and less than or equal to 5000.
The active layer 103 is a quantum well composed of a well layer and a barrier layer, and the quantum well period is w: w is more than or equal to 1 and less than or equal to 2. The active layer 103 is any one or any combination of InGaN, gaN, alInN, alInGaN, alGaN, inN, alN. The well layer thickness of the active layer 103 is p: p is more than or equal to 5 and less than or equal to 100. The thickness of the barrier layer is q: q is more than or equal to 10 and less than or equal to 200.
The lower confinement layer 101 is any one or any combination of AlInGaN, alInN, alGaN, inGaN and GaN, and has a thickness of 10 to 90000 a.
The upper confinement layer 105 is any one or any combination of AlInGaN, alInN, alGaN and has a thickness of 10 to 9000 angstroms.
The substrate 100 includes sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
Example 2
As shown in fig. 2 to 4, the present embodiment proposes a GaN-based semiconductor laser chip including a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105, which are disposed in this order from bottom to top. Wherein the upper waveguide layer 104 and the lower waveguide layer 102 have different refractive index profiles.
Specifically, in the present embodiment, the GaN-based semiconductor laser chip is provided with the substrate 100, the lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, and the upper waveguide layer in this order from bottom to topA confinement layer 105. The upper waveguide layer 104 is any one or any combination of GaN, inGaN, inN, and has a thickness l: l is more than or equal to 10 and less than or equal to 5000. The refractive index of the upper waveguide layer 104 has a function y=log a x (1 < a) curve distribution. The refractive index profile of the lower waveguide layer 102 is different from the refractive index profile of the upper waveguide layer 104.
More specifically, in the present embodiment, the lower waveguide layer 102 includes a first sub-lower waveguide layer 102a, a second sub-lower waveguide layer 102b, and a third sub-lower waveguide layer 102c that are disposed in this order from bottom to top. The refractive index profiles of the first sub-lower waveguide layer 102a, the second sub-lower waveguide layer 102b, and the third sub-lower waveguide layer 102c are each different from the refractive index profile of the upper waveguide layer 104, and the refractive index profiles of the first sub-lower waveguide layer 102a, the second sub-lower waveguide layer 102b, and the third sub-lower waveguide layer 102c are also different from each other. The refractive index distribution of the first sub-lower waveguide layer 102a, the second sub-lower waveguide layer 102b, and the third sub-lower waveguide layer 102c will be described in detail below.
The first sub-lower waveguide layer 102a is any one or any combination of GaN, inGaN, inN, and has a thickness m: m is more than or equal to 40 and less than or equal to 9000. The refractive index of the first sub-lower waveguide layer 102a has a constant function y=c1 distribution.
The second sub-lower waveguide layer 102b is any one or any combination of GaN, inGaN, inN, and has a thickness n: n is more than or equal to 20 and less than or equal to 6000. The refractive index of the second sub-lower waveguide layer 102b has a constant function y=c2 distribution, where C1 < C2.
The third sub-lower waveguide layer 102c is any one or any combination of GaN, inGaN, inN and has a thickness k: k is more than or equal to 5 and less than or equal to 500. The third sub-lower waveguide layer 102c has a function y=dx 2 +fx+g distribution, where d < 0.
According to the embodiment, by arranging the upper waveguide layer 104 and the lower waveguide layer 102 with different refractive index distributions, the internal optical loss of the semiconductor laser can be effectively restrained, the limiting factor is improved, the mode gain of the laser is further improved, the problems of cracking and quality degradation caused by the increase of the thickness of the lower limiting layer 101 or the Al component are reduced, the light field dissipation is restrained, the probability of light field mode leakage to the substrate 100 is reduced, and the far field quality and the light beam quality factor are improved.
Further, the active layer 103 is a quantum well formed by a well layer and a barrier layer, and the quantum well period is w: w is more than or equal to 1 and less than or equal to 2. The active layer 103 is any one or any combination of InGaN, gaN, alInN, alInGaN, alGaN, inN, alN. The well layer thickness of the active layer 103 is p: p is more than or equal to 5 and less than or equal to 100. The thickness of the barrier layer is q: q is more than or equal to 10 and less than or equal to 200.
The lower confinement layer 101 is any one or any combination of AlInGaN, alInN, alGaN, inGaN and GaN, and has a thickness of 10 to 90000 a.
The upper confinement layer 105 is any one or any combination of AlInGaN, alInN, alGaN and has a thickness of 10 to 9000 angstroms.
The substrate 100 includes sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
The following table shows the comparison of the performance parameters of the GaN-based semiconductor laser chip proposed in this embodiment and the conventional semiconductor laser chip:
it can be seen that the beam quality factor of the GaN-based semiconductor laser chip proposed in this embodiment is improved from 3.9 to 1.19 by 228%; the limiting factor is increased from 1.4% to 2.96% by 111%; the internal optical loss is reduced from 17.2% to 4.9%, the improvement is about 72%, and the working performance of the semiconductor laser is effectively improved.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present application without departing from the spirit or scope of the application. Thus, if such modifications and variations of the present application fall within the scope of the claims and the equivalents thereof, the present application is intended to cover such modifications and variations.
Claims (10)
1. A GaN-based semiconductor laser chip comprising a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper confinement layer disposed in this order from bottom to top, characterized in that the upper waveguide layer and the lower waveguide layer have different refractive index profiles.
2. The GaN-based semiconductor laser chip of claim 1 wherein the refractive index of the upper waveguide layer has a function y = log a x (1 < a) curve distribution.
3. The GaN-based semiconductor laser chip of claim 1, wherein the lower waveguide layer comprises a first sub-lower waveguide layer, a second sub-lower waveguide layer, and a third sub-lower waveguide layer disposed in order from bottom to top, the first sub-lower waveguide layer, the second sub-lower waveguide layer, and the third sub-lower waveguide layer having different refractive index profiles.
4. The GaN-based semiconductor laser chip of claim 3 wherein the refractive index of said first sub-lower waveguide layer has a constant function y=c1 distribution, the refractive index of said second sub-lower waveguide layer has a constant function y=c2 distribution, and the third sub-lower waveguide layer has a function y=dx 2 +fx+g distribution, where d < 0, C1 < C2.
5. The GaN-based semiconductor laser chip of claim 1, wherein the upper waveguide layer is any one or any combination of GaN, inGaN, inN, and the upper waveguide layer has a thickness of l: l is more than or equal to 10 and less than or equal to 5000.
6. The GaN-based semiconductor laser chip of claim 3 or 4, wherein the lower waveguide layer is any one or any combination of GaN, inGaN, inN, and the first sub-lower waveguide layer has a thickness m: m is more than or equal to 40 and less than or equal to 9000, and the thickness of the second sub-lower waveguide layer is n: n is more than or equal to 20 and less than or equal to 6000, and the thickness of the third sub-lower waveguide layer is k: k is more than or equal to 5 and less than or equal to 500.
7. The GaN-based semiconductor laser chip of claim 1, wherein the active layer is a quantum well composed of a well layer and a barrier layer, and the quantum well period is w: w is more than or equal to 1 and less than or equal to 2, and the active layer is any one or any combination of InGaN, gaN, alInN, alInGaN, alGaN, inN, alN; the thickness of the well layer of the active layer is p: p is more than or equal to 5 and less than or equal to 100, and the thickness of the barrier layer is equal to the thickness q: q is more than or equal to 10 and less than or equal to 200.
8. The GaN-based semiconductor laser chip of claim 1, wherein the lower confinement layer is any one or any combination of AlInGaN, alInN, alGaN, inGaN and GaN, and has a thickness of 10 to 90000 a.
9. The GaN-based semiconductor laser chip of claim 1, wherein the upper confinement layer is any one or any combination of AlInGaN, alInN, alGaN and has a thickness of 10 to 9000 angstroms.
10. The GaN-based semiconductor laser chip of claim 1 wherein the substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311461349.0A CN117526089A (en) | 2023-11-06 | 2023-11-06 | GaN-based semiconductor laser chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311461349.0A CN117526089A (en) | 2023-11-06 | 2023-11-06 | GaN-based semiconductor laser chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117526089A true CN117526089A (en) | 2024-02-06 |
Family
ID=89746846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311461349.0A Pending CN117526089A (en) | 2023-11-06 | 2023-11-06 | GaN-based semiconductor laser chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117526089A (en) |
-
2023
- 2023-11-06 CN CN202311461349.0A patent/CN117526089A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN116505377A (en) | Semiconductor ultraviolet laser | |
| CN117526089A (en) | GaN-based semiconductor laser chip | |
| CN116169558B (en) | Semiconductor laser with substrate mode suppression layer | |
| CN219677770U (en) | Semiconductor ultraviolet laser | |
| CN117691468A (en) | GaN-based semiconductor ultraviolet laser diode | |
| CN219659148U (en) | Semiconductor green light laser | |
| CN116526297A (en) | Semiconductor laser with double exciton quantum confinement layer | |
| CN117691466A (en) | Semiconductor ultraviolet laser diode | |
| CN219779408U (en) | Semiconductor ultraviolet laser | |
| CN117691467A (en) | Gallium nitride-based semiconductor ultraviolet laser chip | |
| CN117175351A (en) | Semiconductor laser element with nonreciprocal topological laser oscillation layer | |
| CN117394139A (en) | GaN-based semiconductor laser element | |
| CN116316065A (en) | Semiconductor laser with optical field loss control layer | |
| CN117175347B (en) | Semiconductor laser | |
| CN118099943A (en) | Gallium nitride-based semiconductor laser | |
| CN117526088A (en) | Semiconductor laser element with spin polarized electron layer | |
| CN117712833A (en) | Gallium nitride semiconductor blue light laser | |
| CN117712832A (en) | Semiconductor laser | |
| CN117410828A (en) | Semiconductor ultraviolet laser | |
| CN116914564A (en) | Semiconductor laser | |
| CN116207613A (en) | Semiconductor laser element provided with stimulated Brillouin scattering layer | |
| CN117595074A (en) | GaN-based semiconductor laser | |
| CN117691469A (en) | Semiconductor laser diode | |
| CN117613673A (en) | Gallium nitride-based semiconductor laser chip | |
| CN118054303A (en) | Semiconductor laser chip with light absorption loss suppression layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |