CN118099943A - Gallium nitride-based semiconductor laser - Google Patents
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- CN118099943A CN118099943A CN202410217058.5A CN202410217058A CN118099943A CN 118099943 A CN118099943 A CN 118099943A CN 202410217058 A CN202410217058 A CN 202410217058A CN 118099943 A CN118099943 A CN 118099943A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 39
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000009826 distribution Methods 0.000 claims description 61
- 238000012885 constant function Methods 0.000 claims description 15
- 229910052594 sapphire Inorganic materials 0.000 claims description 12
- 239000010980 sapphire Substances 0.000 claims description 12
- 239000002131 composite material Substances 0.000 claims description 10
- 239000011777 magnesium Substances 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 6
- -1 magnesium aluminate Chemical class 0.000 claims description 4
- 229910002704 AlGaN Inorganic materials 0.000 claims description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 3
- 229910010092 LiAlO2 Inorganic materials 0.000 claims description 3
- 229910020068 MgAl Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910007948 ZrB2 Inorganic materials 0.000 claims description 3
- VWZIXVXBCBBRGP-UHFFFAOYSA-N boron;zirconium Chemical compound B#[Zr]#B VWZIXVXBCBBRGP-UHFFFAOYSA-N 0.000 claims description 3
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 230000000630 rising effect Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052596 spinel Inorganic materials 0.000 claims description 3
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- 230000000694 effects Effects 0.000 abstract description 11
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- 238000005086 pumping Methods 0.000 abstract description 5
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Abstract
The invention provides a gallium nitride-based semiconductor laser which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top. The invention can reduce Stokes frequency shift heat loss caused by energy difference between pumping light and oscillating light, reduce waste heat generation rate of a laser, reduce thermal expansion and thermal mismatch stress, inhibit temperature quenching and thermal mismatch fracture of the laser, inhibit thermal lens and stress birefringence effect, reduce depolarization and distortion of laser beams, and improve beam quality factors.
Description
Technical Field
The application relates to the field of semiconductor photoelectric devices, in particular to a gallium nitride-based semiconductor laser.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The laser has various types and various classification modes, and mainly comprises solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state gallium nitride-based semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like.
The laser is largely different from the nitride semiconductor light emitting diode:
1) The laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level;
2) The current density of the laser reaches KA/cm 2, which is higher than that of the nitride light-emitting diode by more than 2 orders of magnitude, so that stronger electron leakage, more serious Auger recombination, stronger polarization effect and more serious electron-hole mismatch are caused, and more serious efficiency attenuation Droop effect is caused;
3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated;
4) The principle is different: the light emitting diode generates radiation composite luminescence by transferring electron holes to an active layer or a p-n junction under the action of external voltage, and the laser can perform lasing only when the lasing condition is satisfied, the inversion distribution of carriers in an active area is necessarily satisfied, the stimulated radiation oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss when the threshold condition is satisfied, and finally laser is output.
The nitride gallium nitride-based semiconductor laser has the following problems: the heat loss, namely Stokes shift loss formed by photon energy difference between pump light and oscillation light is converted into heat, and the energy loss of the coupling ratio of the pump energy level to the upper energy level of laser is not 1 is converted into heat, and the pump energy level and the upper energy level of laser jointly generate a large amount of waste heat, so that the temperature distribution of the laser is uneven, the thermal expansion and the thermal stress distribution are caused to be uneven, and the temperature quenching, the laser fracture, the thermal lens effect and the stress birefringence effect are generated; thermal lenses create lens-like phenomena in space, while stress birefringence effects change the polarization state of incident light, depolarizing and distorting the laser beam.
Disclosure of Invention
In order to solve one of the technical problems, the invention provides a gallium nitride-based semiconductor laser.
The embodiment of the invention provides a gallium nitride-based semiconductor laser which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top.
Preferably, the Al/H element proportion of the active layer is distributed in a constant function;
the In/H element proportion of the active layer is distributed In a curve of a function y= xsinx;
The Si/H element proportion of the active layer is distributed in a curve of y=ax 2 (a < 0);
the Mg/H element proportion of the active layer is distributed in a constant function;
The proportion of the C/O elements of the active layer is distributed in a constant function.
Preferably, the lower waveguide layer has In/H element ratio distribution, si/H element ratio distribution, al/H element ratio distribution, and C/O element ratio distribution characteristics.
Preferably, the In/H element ratio of the lower waveguide layer is distributed In a third quadrant curve of a function y=sinx/x 2;
The Si/H element proportion of the lower waveguide layer is distributed in a curve of a function y= lnx/e x;
The Al/H element proportion of the lower waveguide layer is distributed in a constant function;
the proportion of the C/O elements of the lower waveguide layer is distributed in a constant function.
Preferably, the upper waveguide layer has an In/H element ratio distribution characteristic, and the In/H element ratio of the upper waveguide layer is distributed In a curve of a function y=x 1/2.
Preferably, the decreasing angle of the peak position of the In/H element proportion of the active layer In the downward limiting layer direction is alpha;
the rising angle of the valley value position of the In/H element proportion of the active layer In the direction of the downward limiting layer is beta;
the descending angle of the peak position of the In/H element proportion of the upper waveguide layer In the upward limiting layer direction is gamma;
the descending angle of the peak position of the In/H element proportion of the lower waveguide layer to the direction of the lower limiting layer is delta;
The descending angle of the peak position of the Si/H element proportion of the active layer in the direction of the downward limiting layer is theta;
Wherein: gamma is more than or equal to 10 degrees and less than or equal to theta is more than or equal to beta is more than or equal to alpha is more than or equal to delta and less than or equal to 90 degrees.
Preferably, the active layer is a periodic structure consisting of a well layer and a barrier layer, and the period number is 3-1;
The well layer of the active layer is any one or any combination of InGaN and GaN, and the thickness of the well layer is 10-60 angstroms;
the barrier layer of the active layer is any one or any combination of GaN, alGaN, alInGaN, alN, alInN and has a thickness of 10 to 60 angstroms.
Preferably, the upper waveguide layer and the lower waveguide layer are any one or any combination of GaN, alGaN, alInGaN, inGaN and have a thickness of 10 to 500 a.
Preferably, the lower confinement layer and the upper confinement layer comprise any one or any combination of GaN、AlGaN、InGaN、AlInGaN、AlN、InN、AlInN、SiC、Ga2O3、BN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP.
Preferably, the substrate comprises any one of sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, sapphire/SiN x, magnesium aluminate spinel MgAl 2O4、MgO、ZnO、ZrB2、LiAlO2 and LiGaO 2 composite substrate.
The beneficial effects of the invention are as follows: according to the invention, al/H element proportion distribution, in/H element proportion distribution, si/H element proportion distribution, mg/H element proportion distribution and C/O element proportion distribution characteristics are set In the active layer of the semiconductor laser, so that Stokes frequency shift heat loss caused by energy difference between pumping light and oscillating light can be reduced, waste heat generation rate of the laser is reduced, thermal expansion and thermal mismatch stress are reduced, temperature quenching and thermal mismatch fracture of the laser are suppressed, meanwhile, thermal lens and stress birefringence effect are suppressed, depolarization and distortion of laser beams are reduced, and beam quality factors are improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute a limitation on the application. In the drawings:
fig. 1 is a schematic structural diagram of a gallium nitride-based semiconductor laser according to an embodiment of the present invention;
FIG. 2 is a SIMS secondary ion mass spectrum of a gallium nitride-based semiconductor laser according to an embodiment of the present invention;
FIG. 3 is a partially amplified SIMS secondary ion mass spectrum of a gallium nitride-based semiconductor laser according to an embodiment of the present invention;
Fig. 4 is a TEM transmission electron microscope of a gallium nitride-based semiconductor laser according to an embodiment of the present invention.
Reference numerals:
100. substrate, 101, lower confinement layer, 102, lower waveguide layer, 103, active layer, 104, upper waveguide layer, 105, upper confinement layer.
Detailed Description
In order to make the technical solutions and advantages of the embodiments of the present application more apparent, the following detailed description of exemplary embodiments of the present application is provided in conjunction with the accompanying drawings, and it is apparent that the described embodiments are only some embodiments of the present application and not exhaustive of all embodiments. It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other.
As shown in fig. 1 to 4, the present embodiment proposes a gallium nitride-based semiconductor laser including a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105 disposed in this order from bottom to top, wherein in the active layer 103, the present embodiment sets a specific element ratio distribution characteristic inside.
Specifically, in the present embodiment, the gallium nitride-based semiconductor laser is provided with a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105 in this order from bottom to top. In this active layer 103, it has a specific element ratio distribution characteristic, specifically including Al/H element ratio distribution, in/H element ratio distribution, si/H element ratio distribution, mg/H element ratio distribution, and C/O element ratio distribution characteristic. The Al/H element proportion distribution, in/H element proportion distribution, si/H element proportion distribution, mg/H element proportion distribution and C/O element proportion distribution characteristics are specifically expressed as follows:
Al/H element ratio distribution:
the Al/H element proportion of the active layer 103 is distributed in a constant function;
In/H element ratio distribution:
the In/H element ratio of the active layer 103 is distributed In a curve of the function y= xsinx;
Si/H element ratio distribution:
the Si/H element ratio of the active layer 103 is distributed in a y=ax 2 (a < 0) curve;
Mg/H element ratio distribution:
the Mg/H element proportion of the active layer 103 is distributed as a constant function;
C/O element ratio distribution:
the C/O element ratio of the active layer 103 is distributed as a constant function.
The embodiment sets the characteristics of Al/H element proportion distribution, in/H element proportion distribution, si/H element proportion distribution, mg/H element proportion distribution and C/O element proportion distribution In the active layer 103 of the semiconductor laser, so that Stokes frequency shift heat loss caused by energy difference between pumping light and oscillating light can be reduced, waste heat generation rate of the laser is reduced, thermal expansion and thermal mismatch stress are reduced, temperature quenching and thermal mismatch fracture of the laser are suppressed, meanwhile, thermal lens and stress birefringence effect are suppressed, depolarization and distortion of laser beams are reduced, and beam quality factors are improved.
In this embodiment, in addition to the specific element ratio distribution characteristics designed in the active layer 103, the specific element ratio distribution characteristics are also set in the lower waveguide layer 102 and the upper waveguide layer 104. Among them, the specific element ratio distribution In the lower waveguide layer 102 includes an In/H element ratio distribution, a Si/H element ratio distribution, an Al/H element ratio distribution, and a C/O element ratio distribution. The specific element ratio distribution In the upper waveguide layer 104 is an In/H element ratio distribution. The concrete steps are as follows:
Lower waveguide layer 102:
In/H element ratio distribution:
The In/H element ratio of lower waveguide layer 102 is distributed In a third quadrant curve of function y=sinx/x 2;
Si/H element ratio distribution:
The Si/H element ratio of lower waveguide layer 102 is plotted as a function y= lnx/e x;
Al/H element ratio distribution:
the Al/H element proportion of the lower waveguide layer 102 is distributed in a constant function;
C/O element ratio distribution
The ratio of the C/O elements of lower waveguide layer 102 is distributed as a constant function.
Upper waveguide layer 104:
In/H element ratio distribution:
The In/H element ratio of the upper waveguide layer 104 is plotted as a function y=x 1/2.
The element proportion distribution in the lower waveguide layer 102 and the upper waveguide layer 104 is designed, so that stokes shift heat loss caused by energy difference between pumping light and oscillating light can be further reduced, waste heat generation rate of a laser is reduced, thermal expansion and thermal mismatch stress are reduced, temperature quenching and thermal mismatch fracture problems of the laser are suppressed, meanwhile, thermal lens and stress birefringence effect are suppressed, depolarization and distortion of laser beams are reduced, and beam quality factors are improved.
Further, in this embodiment, on the basis of setting the element proportion distribution characteristics in the active layer 103, the lower waveguide layer 102 and the upper waveguide layer 104, a part of the element proportions in the active layer 103, the lower waveguide layer 102 and the upper waveguide layer 104 have a certain trend of change, including a trend of rising or falling in the direction of the lower confinement layer 101 and the direction of the upper confinement layer 105, specifically expressed as:
the peak position of the In/H element ratio of the active layer 103 tends to decrease toward the lower confinement layer 101;
The valley position of the In/H element ratio of the active layer 103 is In an upward trend toward the lower confinement layer 101;
the peak position of the In/H element ratio of the upper waveguide layer 104 tends to decrease toward the upper confinement layer 105;
The peak position of the In/H element ratio of the lower waveguide layer 102 tends to decrease toward the lower confinement layer 101;
The peak position of the Si/H element ratio of the active layer 103 tends to decrease toward the lower confinement layer 101;
Wherein, the downward angle of the peak position of the In/H element ratio of the active layer 103 In the direction of the downward confinement layer 101 is α, the upward angle of the valley position of the In/H element ratio of the active layer 103 In the direction of the downward confinement layer 101 is β, the downward angle of the peak position of the In/H element ratio of the upper waveguide layer 104 In the direction of the upward confinement layer 105 is γ, the downward angle of the peak position of the In/H element ratio of the lower waveguide layer 102 In the direction of the downward confinement layer 101 is δ, the downward angle of the peak position of the Si/H element ratio of the active layer 103 In the direction of the downward confinement layer 101 is θ, and the relationship between the above angles is: gamma is more than or equal to 10 degrees and less than or equal to theta is more than or equal to beta is more than or equal to alpha is more than or equal to delta and less than or equal to 90 degrees.
In this embodiment, by designing the variation trend of the proportion of a part of elements in the active layer 103, the lower waveguide layer 102 and the upper waveguide layer 104 and limiting the range of the variation angle, stokes shift heat loss caused by the energy difference between the pumping light and the oscillating light can be further reduced, the waste heat generation rate of the laser is reduced, the thermal expansion and thermal mismatch stress are reduced, the temperature quenching and the thermal mismatch fracture problem of the laser are suppressed, meanwhile, the thermal lens and the stress birefringence effect are suppressed, the depolarization and distortion of the laser beam are reduced, and the beam quality factor is improved.
Further, in this embodiment, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, and the number of periods is 3.gtoreq.m.gtoreq.1. The well layer of the active layer 103 is any one or any combination of InGaN and GaN, and has a thickness of 10 to 60 a. The barrier layer of the active layer 103 is any one or any combination of GaN, alGaN, alInGaN, alN, alInN and has a thickness of 10 to 60 a.
The upper waveguide layer 104 and the lower waveguide layer 102 are any one or any combination of GaN, alGaN, alInGaN, inGaN a and have a thickness of 10a to 500 a.
The lower confinement layer 101 and the upper confinement layer 105 comprise any one or any combination of GaN、AlGaN、InGaN、AlInGaN、AlN、InN、AlInN、SiC、Ga2O3、BN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP.
The substrate 100 includes any one of sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, sapphire/SiN x, magnesium aluminate spinel MgAl 2O4、MgO、ZnO、ZrB2、LiAlO2, and a LiGaO 2 composite substrate.
The following table shows the parameter comparison between the gallium nitride-based semiconductor laser device proposed in this embodiment and the conventional semiconductor laser device:
it can be seen that the beam quality factor of the gallium nitride-based semiconductor laser of the present embodiment is improved from 3.9 to 2.1, 86% improvement, compared with the conventional semiconductor laser; the temperature quenching ratio is reduced from 109PPM to 13PPM by 88%. Obviously, the gallium nitride-based semiconductor laser of the present embodiment has better performance than the conventional semiconductor laser.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present application without departing from the spirit or scope of the application. Thus, it is intended that the present application also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (10)
1. The gallium nitride-based semiconductor laser comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top, and is characterized In that the active layer has Al/H element proportion distribution, in/H element proportion distribution, si/H element proportion distribution, mg/H element proportion distribution and C/O element proportion distribution characteristics.
2. The gallium nitride-based semiconductor laser according to claim 1, wherein the Al/H element ratio of the active layer is distributed as a constant function;
the In/H element proportion of the active layer is distributed In a curve of a function y= xsinx;
The Si/H element proportion of the active layer is distributed in a curve of y=ax 2 (a < 0);
the Mg/H element proportion of the active layer is distributed in a constant function;
The proportion of the C/O elements of the active layer is distributed in a constant function.
3. The gallium nitride-based semiconductor laser according to claim 1, wherein the lower waveguide layer has In/H element ratio distribution, si/H element ratio distribution, al/H element ratio distribution, and C/O element ratio distribution characteristics.
4. A gallium nitride-based semiconductor laser according to claim 3, wherein the In/H element ratio of the lower waveguide layer is distributed as a function of y = sinx/x 2 third quadrant curve;
The Si/H element proportion of the lower waveguide layer is distributed in a curve of a function y= lnx/e x;
The Al/H element proportion of the lower waveguide layer is distributed in a constant function;
the proportion of the C/O elements of the lower waveguide layer is distributed in a constant function.
5. A gallium nitride-based semiconductor laser according to claim 3, wherein the upper waveguide layer has an In/H element ratio distribution characteristic, and the In/H element ratio of the upper waveguide layer is distributed as a function y=x 1/2 curve.
6. The gallium nitride-based semiconductor laser according to claim 5, wherein a peak position of In/H element ratio of the active layer is lowered by an angle α toward the lower confinement layer;
the rising angle of the valley value position of the In/H element proportion of the active layer In the direction of the downward limiting layer is beta;
the descending angle of the peak position of the In/H element proportion of the upper waveguide layer In the upward limiting layer direction is gamma;
the descending angle of the peak position of the In/H element proportion of the lower waveguide layer to the direction of the lower limiting layer is delta;
The descending angle of the peak position of the Si/H element proportion of the active layer in the direction of the downward limiting layer is theta;
Wherein: gamma is more than or equal to 10 degrees and less than or equal to theta is more than or equal to beta is more than or equal to alpha is more than or equal to delta and less than or equal to 90 degrees.
7. The gallium nitride-based semiconductor laser according to claim 1, wherein the active layer is a periodic structure consisting of a well layer and a barrier layer, and the number of periods is 3-1;
The well layer of the active layer is any one or any combination of InGaN and GaN, and the thickness of the well layer is 10-60 angstroms;
the barrier layer of the active layer is any one or any combination of GaN, alGaN, alInGaN, alN, alInN and has a thickness of 10 to 60 angstroms.
8. The gallium nitride-based semiconductor laser according to claim 1, wherein the upper and lower waveguide layers are any one or any combination of GaN, alGaN, alInGaN, inGaN a and have a thickness of 10 to 500 a.
9. The gallium nitride-based semiconductor laser according to claim 1, wherein the lower confinement layer and the upper confinement layer comprise any one or any combination of GaN、AlGaN、InGaN、AlInGaN、AlN、InN、AlInN、SiC、Ga2O3、BN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP.
10. The gallium nitride-based semiconductor laser according to claim 1, wherein the substrate comprises any one of sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, sapphire/SiN x, magnesium aluminate spinel MgAl 2O4、MgO、ZnO、ZrB2、LiAlO2, and a LiGaO 2 composite substrate.
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