CN117613673A - Gallium nitride-based semiconductor laser chip - Google Patents
Gallium nitride-based semiconductor laser chip Download PDFInfo
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- CN117613673A CN117613673A CN202311471644.4A CN202311471644A CN117613673A CN 117613673 A CN117613673 A CN 117613673A CN 202311471644 A CN202311471644 A CN 202311471644A CN 117613673 A CN117613673 A CN 117613673A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 33
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 238000009826 distribution Methods 0.000 claims abstract description 95
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000002131 composite material Substances 0.000 claims description 12
- 229910052594 sapphire Inorganic materials 0.000 claims description 12
- 239000010980 sapphire Substances 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 6
- 229910010093 LiAlO Inorganic materials 0.000 claims description 3
- 229910020068 MgAl Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 238000012886 linear function Methods 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052596 spinel Inorganic materials 0.000 claims description 3
- 239000011029 spinel Substances 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 9
- 238000009825 accumulation Methods 0.000 abstract description 7
- 230000006798 recombination Effects 0.000 abstract description 7
- 238000005215 recombination Methods 0.000 abstract description 7
- 230000003287 optical effect Effects 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000001819 mass spectrum Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000012885 constant function Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000005472 transition radiation Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/3013—AIIIBV compounds
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention provides a gallium nitride-based semiconductor laser chip, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially connected from bottom to top, wherein the In/H element proportion distribution of the active layer is distributed In a curve of y=xsinx function, and the Si/C element proportion distribution is distributed In a curve of y=e x A sinx function curve distribution. The gallium nitride-based semiconductor laser chip provided by the invention can reduce the resistance of the active layer, reduce the non-radiative recombination loss and the heat generated by free carrier absorption through setting the In/H element proportion distribution and the Si/C element proportion distribution of the active layer, improve the temperature rise amplitude of the active layer of the chip during laser operation, reduce the heat accumulation of the active layer, improve the quantum efficiency and the slope efficiency of the laser chip and improve the resolution of focusing light spots.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectric devices, in particular to a gallium nitride-based semiconductor laser chip.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The laser has various types and various classification modes, and mainly comprises solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like. While the laser is largely different from the nitride semiconductor light emitting diode:
1) The laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level;
2) Use of lasers current densities up to KA/cm 2 Is more than 2 orders of magnitude higher than nitride light emitting diodes, thereby easily causing stronger electron leakage, more serious auger recombination, stronger polarization effect and more serious electron hole mismatch, resulting in more serious efficiency attenuation Droop effect;
3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated;
4) The principle is different: the light emitting diode generates radiation composite luminescence by transferring electron holes to an active layer or a p-n junction under the action of external voltage, and the laser can perform lasing only when the lasing condition is satisfied, the inversion distribution of carriers in an active area is necessarily satisfied, the stimulated radiation oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss when the threshold condition is satisfied, and finally laser is output.
Based on the above-described difference, a semiconductor laser fabricated using nitride has the following problems: the non-radiative composite loss and free carrier absorption exist in the active area of the laser chip, so that a large amount of heat is generated by the chip, meanwhile, joule heat loss and carrier absorption loss can be generated by epitaxy and chip materials with resistance under current injection, the thermal conductivity of the chip materials is low, the heat dissipation performance is poor, the temperature of an active layer is increased, and the problems of red shift of lasing wavelength, reduction of quantum efficiency, reduction of power, increase of threshold current, shortening of service life, deterioration of reliability and the like occur.
Disclosure of Invention
The invention aims to provide a gallium nitride-based semiconductor laser chip, which solves the technical problems, reduces the resistance of an active layer, reduces the non-radiative recombination loss and the heat generated by free carrier absorption through setting the element proportion distribution of the active layer, improves the temperature rise amplitude of the active layer during laser operation, reduces the heat accumulation of the active layer, improves the quantum efficiency and the slope efficiency of the laser chip, and improves the resolution of focusing light spots.
In order to solve the technical problems, the invention provides a gallium nitride-based semiconductor laser chip, which comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially connected from bottom to top, wherein the In/H element proportion distribution of the active layer is distributed In a curve of y=xsinx function, and the Si/C element proportion distribution is distributed In a curve of y=e x A sinx function curve distribution.
In the scheme, through setting the In/H element proportion distribution and the Si/C element proportion distribution of the active layer, the resistance of the active layer can be reduced, the heat generated by non-radiative recombination loss and free carrier absorption is reduced, the temperature heating amplitude of the chip active layer during laser operation is improved, the heat accumulation of the active layer is reduced, the quantum efficiency and slope efficiency of the laser chip are improved, and the focusing light spot resolution is improved.
Further, the In/H element proportion distribution of the lower waveguide layer is y=sinx/x 2 The curve distribution of the third quadrant of the function, and the In/H element proportion distribution of the upper waveguide layer is In the curve distribution of the first and fourth quadrants of the function of y=x-1/2 x.
Further, si ∈ of the lower waveguide layerThe proportion distribution of C element is sinx/e x The function curve is distributed.
In the scheme, the element proportion distribution matched with the active layer is set, and the In/H element proportion distribution and the Si/C element proportion distribution of adjacent layers are set to have corresponding curve distribution types, so that the non-radiative composite loss and the heat generated by free carrier absorption can be further reduced, the temperature rise amplitude of the chip active layer during laser operation is improved, the heat accumulation of the active layer is reduced, the quantum efficiency and the slope efficiency of the laser chip are improved, and the resolution of focusing light spots is improved.
Further, the C/O element proportion distribution and the C/H element proportion distribution of the interface of the lower limiting layer and the lower waveguide layer are distributed in an approximate linear function curve.
Further, the Al/O element proportion distribution of the interface of the lower limiting layer and the lower waveguide layer is y= lnx/e x Curve distribution of the function; the Al/O element proportion distribution and the Mg/O element proportion distribution of the interface of the upper waveguide layer and the upper limiting layer are y=e 2 sinx function curve distribution.
Further, the C/O element proportion distribution of the interface of the upper waveguide layer and the upper limiting layer is y= (a) x -1)/(a x +1) function curve distribution, 0<a<1, a step of; the C/O element proportion distribution of the interface of the upper waveguide layer and the upper limiting layer is y= (a) x -1)/(a x +1) function curve distribution, 0<a<1。
Further, the active layer is a periodic structure formed by a well layer and a barrier layer, and the period number m is more than or equal to 3 and more than or equal to 1.
Further, the well layer is any one or any combination of InGaN and GaN, and the thickness is 10-60 angstroms; the barrier layer is any one or any combination of GaN, alGaN, alInGaN, alN, alInN, and the thickness is 10-60 angstroms.
Further, the lower confinement layer, the lower waveguide layer, the active layer, the upper waveguide layer and/or the upper confinement layer comprise GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 、BN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGany one or any combination of aP.
Further, the substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
Drawings
FIG. 1 is a schematic diagram of a GaN-based semiconductor laser chip according to an embodiment of the invention;
FIG. 2 is a schematic diagram of a SIMS secondary ion mass spectrum of a GaN-based semiconductor laser chip according to an embodiment of the present invention;
FIG. 3 is a second SIMS secondary ion mass spectrum of a GaN-based semiconductor laser chip according to an embodiment of the present invention;
FIG. 4 is a structural TEM lens electron microscope of a GaN-based semiconductor laser chip according to an embodiment of the invention;
wherein: 1. a substrate; 2. a lower confinement layer; 3. a lower waveguide layer; 4. an active layer; 5. an upper waveguide layer; 6. and (5) an upper limiting layer.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1, the present embodiment provides a gallium nitride-based semiconductor laser chip, which includes a substrate 1, a lower confinement layer 2, a lower waveguide layer 3, an active layer 4, an upper waveguide layer 5 and an upper confinement layer 6 sequentially connected from bottom to top, wherein the In/H element proportion distribution of the active layer 4 is In a y=xsnx function curve distribution, and the Si/C element proportion distribution is In a y=e x A sinx function curve distribution.
In this embodiment, by setting the In/H element proportion distribution and the Si/C element proportion distribution of the active layer 4, the resistance of the active layer 4 can be reduced, the non-radiative recombination loss and the heat generated by free carrier absorption can be reduced, the temperature rise amplitude of the chip active layer 4 during laser operation can be improved, the heat accumulation of the active layer 4 can be reduced, the quantum efficiency and slope efficiency of the laser chip can be improved, and the focusing light spot resolution can be improved.
As shown In fig. 2 and 3, the In element distribution of the active layer 4 is a y=4/3pi×sin (3 x) function distribution, and the Si doping concentration distribution is y=cosx/e x The function curve distribution is adopted, so that In component fluctuation and segregation of the active layer 4 are inhibited, the crystal quality and interface quality of the active layer 4 are improved, defects are reduced, thermal degradation is reduced, the peak gain and service life of the laser are improved, optical catastrophe is inhibited, meanwhile, the polarization electric field of the active layer 4 can be effectively regulated, the potential barrier of hole injection into the active layer 4 is reduced, the symmetry and matching property of electron holes of the active layer 4 are improved, electron leakage is reduced, the peak gain and gain uniformity of the laser are improved, the threshold current of the laser is reduced, and the optical power and slope efficiency of the laser are improved.
Further, the Mg/C element proportion distribution, the C/O element proportion distribution, and the C/H element proportion distribution of the active layer 4 have approximately constant function distributions.
Further, the In/H element ratio distribution of the lower waveguide layer 3 is y=sinx/x 2 The curve distribution of the third quadrant of the function, the In/H element proportion distribution of the upper waveguide layer 5 is In the first and four quadrant curve distribution of the y=x-1/2 x function.
Further, the Si/C element proportion distribution of the lower waveguide layer 3 is sinx/e x The function curve is distributed.
In this embodiment, the element proportion distribution matched with the active layer 4 is set, and the In/H element proportion distribution and the Si/C element proportion distribution of adjacent layers are set to have corresponding curve distribution types, so that the non-radiative recombination loss and the heat generated by free carrier absorption can be further reduced, the temperature rise amplitude of the chip active layer 4 during laser operation is improved, the heat accumulation of the active layer 4 is reduced, the quantum efficiency and the slope efficiency of the laser chip are improved, and the focusing light spot resolution is improved.
Further, the C/O element proportion distribution and the C/H element proportion distribution of the interface of the lower limiting layer 2 and the lower waveguide layer 3 are distributed in an approximate linear function curve.
Further, the Al/O element proportion distribution of the interface of the lower limiting layer 2 and the lower waveguide layer 3 is y= lnx/e x Curve distribution of the function; the Al/O element proportion distribution and the Mg/O element proportion distribution of the interface of the upper waveguide layer 5 and the upper limiting layer 6 are y=e 2 sinx function curve distribution.
Further, the C/O element ratio distribution at the interface between the upper waveguide layer 5 and the upper confinement layer 6 is y= (a) x -1)/(a x +1) function curve distribution, 0<a<1, a step of; the C/O element proportion distribution of the interface of the upper waveguide layer 5 and the upper limiting layer 6 is y= (a) x -1)/(a x +1) function curve distribution, 0<a<1。
Further, referring to fig. 4, the active layer 4 is a periodic structure formed by a well layer and a barrier layer, and the period number m is 3 not less than m not less than 1.
Further, the well layer is any one or any combination of InGaN and GaN, and the thickness is 10-60 angstroms; the barrier layer is any one or any combination of GaN, alGaN, alInGaN, alN, alInN, and the thickness is 10-60 angstroms.
Further, the lower confinement layer 2, the lower waveguide layer 3, the active layer 4, the upper waveguide layer 5 and/or the upper confinement layer 6 comprise GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP.
Further, the substrate 1 comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
In the present embodiment, the laser chip active layer 4 is subjected to specific Al/O element ratio distribution, in/H element ratio distribution, si/C element ratio distribution, and Mg/C element ratio distribution set for the laser, wherein the In/H element ratio distribution is a y=xsnx function curve distribution, and the Si/C element ratio distribution is a y=e x The distribution of the sinx function curve can effectively reduce the resistance of the active layer 4, reduce the non-radiative recombination loss and the heat generated by free carrier absorption, improve the temperature rise amplitude of the active layer 4 during laser operation, reduce the heat accumulation of the active layer 4, improve the quantum efficiency and slope efficiency of the laser, and improve the resolution of focused spots.
To further illustrate the technical effects of the present invention, in this embodiment, a blue laser is taken as an example, and the threshold current density of the blue laser using the gallium nitride-based semiconductor laser chip provided in this embodiment is from 1.54kA/cm 2 Down to 0.73kA/cm 2 The slope efficiency increases from 0.64W/a to 0.97W/a and the focused spot resolution decreases from greater than 250nm to less than 30nm. The performance of the laser in the conventional laser is compared with the following table:
as can be seen from the table, in the blue laser manufactured by the gallium nitride-based semiconductor laser chip provided In this embodiment, because of the specific element distribution arrangement In the chip active layer 4, the In component fluctuation and segregation of the active layer 4 are effectively inhibited, the crystal quality and interface quality of the active layer 4 are also improved, defects are reduced, thermal degradation is reduced, the peak gain and service life of the laser can be effectively improved, and optical catastrophe is inhibited; meanwhile, effective regulation and control of a polarized electric field of the active layer 4 can be realized, potential barriers of hole injection into the active layer are reduced, symmetry and matching of electron holes of the active layer 4 are improved, and electron leakage is reduced, so that peak gain and gain uniformity of the laser are improved, threshold current of the laser is reduced, and optical power and slope efficiency of the laser are improved.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that changes and modifications may be made without departing from the principles of the invention, such changes and modifications are also intended to be within the scope of the invention.
Claims (10)
1. The gallium nitride-based semiconductor laser chip comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially connected from bottom to top, and is characterized In that the In/H element proportion distribution of the active layer is distributed In a y=xsinx function curve, and the Si/C element proportion distribution is distributed In a y=e x A sinx function curve distribution.
2. The gallium nitride-based semiconductor laser chip according to claim 1, wherein the In/H element ratio distribution of the lower waveguide layer is y=sinx/x 2 The curve distribution of the third quadrant of the function, and the In/H element proportion distribution of the upper waveguide layer is In the curve distribution of the first and fourth quadrants of the function of y=x-1/2 x.
3. The gallium nitride-based semiconductor laser chip according to claim 1, wherein the Si/C element ratio distribution of the lower waveguide layer is sinx/e x The function curve is distributed.
4. A gallium nitride-based semiconductor laser chip according to claim 1, wherein the C/O element ratio distribution and the C/H element ratio distribution at the interface of the lower confinement layer and the lower waveguide layer each have an approximately linear function curve distribution.
5. The gallium nitride-based semiconductor laser chip according to claim 1, wherein the Al/O element ratio distribution at the interface of the lower confinement layer and the lower waveguide layer is y= lnx/e x Curve distribution of the function; the Al/O element proportion distribution and the Mg/O element proportion distribution of the interface of the upper waveguide layer and the upper limiting layer are y=e 2 sinx function curve distribution.
6. The gallium nitride-based semiconductor laser chip according to claim 1, wherein the C/O element ratio distribution at the interface of the upper waveguide layer and the upper confinement layer is y= (a) x -1)/(a x +1) function curve distribution, 0<a<1, a step of; the C/O element proportion distribution of the interface of the upper waveguide layer and the upper limiting layer is y= (a) x -1)/(a x +1) function curve distribution, 0<a<1。
7. The gallium nitride-based semiconductor laser chip according to any one of claims 1 to 6, wherein the active layer has a periodic structure comprising a well layer and a barrier layer, and the period number m is 3.gtoreq.m.gtoreq.1.
8. The gallium nitride-based semiconductor laser chip according to claim 7, wherein the well layer is any one or any combination of InGaN and GaN, and has a thickness of 10 to 60 a; the barrier layer is any one or any combination of GaN, alGaN, alInGaN, alN, alInN, and the thickness is 10-60 angstroms.
9. A gallium nitride-based semiconductor laser chip according to claim 1, wherein the lower confinement layer, lower waveguide layer, active layer, upper waveguide layer and/or upper confinement layer comprises GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP.
10. A gallium nitride-based semiconductor laser chip according to claim 1, wherein the substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
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