CN118054305A - Semiconductor laser - Google Patents

Semiconductor laser Download PDF

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Publication number
CN118054305A
CN118054305A CN202410150558.1A CN202410150558A CN118054305A CN 118054305 A CN118054305 A CN 118054305A CN 202410150558 A CN202410150558 A CN 202410150558A CN 118054305 A CN118054305 A CN 118054305A
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waveguide layer
layer
lower waveguide
smaller
distributed
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Inventor
郑锦坚
陈婉君
李晓琴
刘紫涵
胡志勇
季徐芳
陈三喜
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Anhui Geen Semiconductor Co ltd
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Anhui Geen Semiconductor Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H01S5/2013—MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2031—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention discloses a semiconductor laser, which is sequentially provided with a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer from bottom to top; the active layer includes a plurality of quantum wells; the lower waveguide layer comprises a first lower waveguide layer and a second lower waveguide layer; wherein the Phillips ionization degree of the first lower waveguide layer is smaller than the Phillips ionization degree of the second lower waveguide layer. The semiconductor laser is formed by the connection, and the Phillips ionization degree of the first lower waveguide layer is smaller than that of the second lower waveguide layer, so that the divergence angle and the horizontal expansion angle of laser spots are increased, far-field images are distributed in an elliptical shape and meet Gaussian distribution, FFP with low aspect ratio is realized, the light spots and the light beam quality are improved, and the light beam quality factor and the limiting factor of the laser are improved.

Description

Semiconductor laser
Technical Field
The invention relates to the technical field of semiconductor photoelectric devices, in particular to a semiconductor laser.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, guidance, distance measurement, spectral analysis, cutting, precise welding, high-density optical storage and the like. The laser has various types and various classification modes, and mainly comprises solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like.
The laser is largely different from the nitride semiconductor light emitting diode: 1) The laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level; 2) The current density of the laser reaches KA/cm 2, which is higher than that of the nitride light-emitting diode by more than 2 orders of magnitude, so that stronger electron leakage, more serious Auger recombination, stronger polarization effect and more serious electron-hole mismatch are caused, and more serious efficiency attenuation Droop effect is caused; 3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated; 4) The light emitting diode generates radiation composite luminescence by transferring electron holes to an active layer or a p-n junction under the action of external voltage, and the laser can perform lasing only when the lasing condition is satisfied, the inversion distribution of carriers in an active area is necessarily satisfied, the stimulated radiation oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss when the threshold condition is satisfied, and finally laser is output.
The existing nitride semiconductor laser has the problems that the substrate mode is expressed as small divergence angle of laser spots, the far-field image does not meet the Gaussian pattern in the c-axis direction of the laser epitaxial layer, the spot quality is poor, and beam focusing is impossible.
Disclosure of Invention
In order to increase the divergence angle and the horizontal expansion angle of a laser spot, the present invention provides a semiconductor laser including:
a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer are sequentially arranged from bottom to top;
the active layer includes a plurality of quantum wells;
the lower waveguide layer comprises a first lower waveguide layer and a second lower waveguide layer;
Wherein the Phillips ionization degree of the first lower waveguide layer is smaller than the Phillips ionization degree of the second lower waveguide layer.
The semiconductor laser is formed by the connection, and the Phillips ionization degree of the first lower waveguide layer is smaller than that of the second lower waveguide layer, so that the divergence angle and the horizontal expansion angle of laser spots are increased, far-field images are distributed in an elliptical shape and meet Gaussian distribution, FFP with low aspect ratio is realized, the light spots and the light beam quality are improved, and the light beam quality factor and the limiting factor of the laser are improved.
In a possible implementation manner of the aspect, the lower waveguide layer is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN.
In a possible implementation manner of the aspect, the lower waveguide layer includes a first lower waveguide layer and a second lower waveguide layer, specifically:
the Ga element of the first lower waveguide layer is distributed in a linear function;
the In element of the second lower waveguide layer is distributed as a linear function.
In one possible implementation manner of the aspect, the phillips ionization degree of the first lower waveguide layer is smaller than the phillips ionization degree of the second lower waveguide layer, specifically:
the Philips ionization degree of the first lower waveguide layer is distributed in a linear function;
the Philips ionization degree of the second lower waveguide layer is distributed in a linear function;
The Phillips ionization degree of the first lower waveguide layer is larger than a first preset value and smaller than that of the second lower waveguide layer, and the Phillips ionization degree of the second lower waveguide layer is smaller than a second preset value.
In a possible implementation manner of the aspect, the lower waveguide layer includes a first lower waveguide layer and a second lower waveguide layer, specifically:
the electron mobility of the first lower waveguide layer is distributed in a linear function;
the electron mobility of the second lower waveguide layer is distributed in a linear function;
the electron mobility of the first lower waveguide layer is larger than a third preset value and smaller than that of the second lower waveguide layer, and the electron mobility of the second lower waveguide layer is smaller than a fourth preset value.
In a possible implementation manner of the aspect, the lower waveguide layer includes a first lower waveguide layer and a second lower waveguide layer, and further includes:
the thermal conductivity of the first lower waveguide layer is distributed in a linear function;
the thermal conductivity of the second lower waveguide layer is distributed in a linear function;
the thermal conductivity of the second lower waveguide layer is larger than a fifth preset value and smaller than that of the first lower waveguide layer, and the thermal conductivity of the first lower waveguide layer is smaller than a sixth preset value.
In a possible implementation manner of the aspect, the active layer includes a plurality of quantum wells, specifically:
the quantum well is a periodic structure consisting of a well layer and a barrier layer;
the cycle number of the quantum well is more than or equal to one and less than or equal to five;
The well layer is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN;
The barrier layer is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN.
In a possible implementation manner of the aspect, the quantum well is a periodic structure composed of a well layer and a barrier layer, and further includes:
The Philips ionization degree of the lower limiting layer is distributed in a linear function;
The Philips ionization degree of the well layer in the quantum well is distributed in a linear function;
The Phillips ionization degree of the lower limiting layer is larger than a seventh preset value and smaller than that of the first lower waveguide layer, the Phillips ionization degree of the first lower waveguide layer is smaller than that of the second lower waveguide layer, and the Phillips ionization degree of the well layer in the quantum well is larger than that of the second lower waveguide layer and smaller than that of the second preset value.
In a possible implementation manner of the aspect, the quantum well is a periodic structure composed of a well layer and a barrier layer, and further includes:
The electron mobility of the lower limiting layer is distributed in a linear function;
The electron mobility of the well layer in the quantum well is distributed in a linear function;
The electron mobility of the lower limiting layer is larger than an eighth preset value and smaller than the electron mobility of the first lower waveguide layer, the electron mobility of the second lower waveguide layer is larger than the electron mobility of the first lower waveguide layer and smaller than the electron mobility of the well layer in the quantum well, and the electron mobility of the well layer in the quantum well is smaller than a fourth preset value.
In a possible implementation manner of the aspect, the quantum well is a periodic structure composed of a well layer and a barrier layer, and further includes:
the thermal conductivity of the lower limiting layer is distributed in a linear function;
The thermal conductivity of the well layer in the quantum well is distributed in a linear function;
The thermal conductivity of the well layer in the quantum well is larger than a fifth preset value and smaller than that of the second lower waveguide layer, the thermal conductivity of the first lower waveguide layer is larger than that of the second lower waveguide layer and smaller than that of the lower limiting layer, and the thermal conductivity of the lower limiting layer is smaller than a ninth preset value.
In a possible implementation manner of the aspect, the upper waveguide layer is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN;
the upper limiting layer is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN;
The lower limiting layer is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN;
The substrate comprises any one of a sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, a sapphire/SiNx, a magnesia-alumina spinel MgAl 2O4、MgO、ZnO、ZrB2、LiAlO2 and a LiGaO 2 composite substrate.
Compared with the prior art, the invention provides a semiconductor laser, which is formed by sequentially arranging a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer from bottom to top, wherein the Philips ionization degree of the first lower waveguide layer is smaller than that of the second lower waveguide layer, so that the divergence angle and the horizontal expansion angle of a laser spot are increased, far-field images are distributed in an elliptical shape and meet Gaussian distribution, FFP with low aspect ratio is realized, the spot and beam quality are improved, and the beam quality factor and the limiting factor of the laser are improved.
Drawings
Fig. 1 is a schematic structural diagram of a semiconductor laser according to an embodiment of the present invention;
Fig. 2 is a structural SIMS secondary ion mass spectrum of a semiconductor laser according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The semiconductor laser provided by the embodiment of the invention can increase the divergence angle and the horizontal diffusion angle of the laser spots, and further improve the beam quality factor and the limiting factor of the laser.
Referring to fig. 1, in an embodiment of the present invention, a schematic structural diagram of a semiconductor laser shown in fig. 1 is provided, where a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104 and an upper confinement layer 105 are sequentially disposed from bottom to top;
The active layer 103 includes a plurality of quantum wells;
The lower waveguide layer 102 includes a first lower waveguide layer 102a and a second lower waveguide layer 102b;
wherein the Phillips ionization degree of the first lower waveguide layer 102a is smaller than the Phillips ionization degree of the second lower waveguide layer 102 b.
In this embodiment, the first lower waveguide layer 102a and the second lower waveguide layer 102b are introduced, where the phillips ionization degree of the first lower waveguide layer 102a is smaller than that of the second lower waveguide layer 102b, so as to increase the divergence angle and the horizontal expansion angle of the laser spot, make the far-field image in elliptical distribution and meet gaussian distribution, realize FFP with low aspect ratio, improve the quality of the spot and the beam, and improve the beam quality factor and the limiting factor of the laser.
Illustratively, the lower waveguide layer is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN. In practical application, the thickness is generally 10 to 50000 angstroms.
Illustratively, the lower waveguide layer includes a first lower waveguide layer and a second lower waveguide layer, specifically:
the Ga element of the first lower waveguide layer is distributed in a linear function;
the In element of the second lower waveguide layer is distributed as a linear function.
Illustratively, the phillips ionization degree of the first lower waveguide layer is smaller than the phillips ionization degree of the second lower waveguide layer, specifically:
the Philips ionization degree of the first lower waveguide layer is distributed in a linear function;
the Philips ionization degree of the second lower waveguide layer is distributed in a linear function;
The Phillips ionization degree of the first lower waveguide layer is larger than a first preset value and smaller than that of a second lower waveguide layer, and the Phillips ionization degree of the second lower waveguide layer is smaller than a second preset value; in practical application, the first preset value is 0.4, and the second preset value is 0.8.
Illustratively, the lower waveguide layer includes a first lower waveguide layer and a second lower waveguide layer, specifically:
the electron mobility of the first lower waveguide layer is distributed in a linear function;
the electron mobility of the second lower waveguide layer is distributed in a linear function;
The electron mobility of the first lower waveguide layer is larger than a third preset value and smaller than that of the second lower waveguide layer, and the electron mobility of the second lower waveguide layer is smaller than a fourth preset value; in practical application, the third preset value is 500cm 2/v s, and the fourth preset value is 3500cm 2/v s.
Illustratively, the lower waveguide layer includes a first lower waveguide layer and a second lower waveguide layer, further comprising:
the thermal conductivity of the first lower waveguide layer is distributed in a linear function;
the thermal conductivity of the second lower waveguide layer is distributed in a linear function;
The thermal conductivity of the second lower waveguide layer is larger than a fifth preset value and smaller than that of the first lower waveguide layer, and the thermal conductivity of the first lower waveguide layer is smaller than a sixth preset value; in practical application, the fifth preset value is 0.2W/cm -1 s, and the sixth preset value is 1.5W/cm -1 s.
Illustratively, the active layer includes a plurality of quantum wells, specifically:
the quantum well is a periodic structure consisting of a well layer and a barrier layer;
the cycle number of the quantum well is more than or equal to one and less than or equal to five;
the well layer is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN; in practical application, the thickness is generally 10 to 100 angstroms.
The barrier layer is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN; in practical application, the thickness is generally 10 to 200 a.
Illustratively, the quantum well is a periodic structure composed of a well layer and a barrier layer, further comprising:
The Philips ionization degree of the lower limiting layer is distributed in a linear function;
The Philips ionization degree of the well layer in the quantum well is distributed in a linear function;
The Phillips ionization degree of the lower limiting layer is larger than a seventh preset value and smaller than that of the first lower waveguide layer, the Phillips ionization degree of the first lower waveguide layer is smaller than that of the second lower waveguide layer, and the Phillips ionization degree of the well layer in the quantum well is larger than that of the second lower waveguide layer and smaller than that of the second preset value; in practical application, the seventh preset value is 0.2.
Illustratively, the quantum well is a periodic structure composed of a well layer and a barrier layer, further comprising:
The electron mobility of the lower limiting layer is distributed in a linear function;
The electron mobility of the well layer in the quantum well is distributed in a linear function;
The electron mobility of the lower limiting layer is larger than an eighth preset value and smaller than the electron mobility of the first lower waveguide layer, the electron mobility of the second lower waveguide layer is larger than the electron mobility of the first lower waveguide layer and smaller than the electron mobility of the well layer in the quantum well, and the electron mobility of the well layer in the quantum well is smaller than a fourth preset value; in practical application, the eighth preset value is 10cm 2/v s.
Illustratively, the quantum well is a periodic structure composed of a well layer and a barrier layer, further comprising:
the thermal conductivity of the lower limiting layer is distributed in a linear function;
The thermal conductivity of the well layer in the quantum well is distributed in a linear function;
The thermal conductivity of the well layer in the quantum well is larger than a fifth preset value and smaller than that of the second lower waveguide layer, the thermal conductivity of the first lower waveguide layer is larger than that of the second lower waveguide layer and smaller than that of the lower limiting layer, and the thermal conductivity of the lower limiting layer is smaller than a ninth preset value; in practical application, the ninth preset value is 3.5W/cm -1 s.
Illustratively, the upper waveguide layer is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN; in practical application, the thickness is generally 10 to 9000 angstroms.
The upper limiting layer is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN; in practical application, the thickness is generally 10 to 8000 a.
The lower limiting layer is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN.
The substrate comprises any one of a sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, a sapphire/SiNx, a magnesia-alumina spinel MgAl 2O4、MgO、ZnO、ZrB2、LiAlO2 and a LiGaO 2 composite substrate.
Table 1 can be obtained by comparing experimental data of the semiconductor laser element in the above-described embodiments with that of a conventional laser.
Table 1 comparison table of laser element parameters
Blue laser-item Traditional laser The laser of the invention Amplitude of variation
Beam quality factor M 2 3.8 1.07 255％
Limiting factor 1.40％ 5.21％ 272％
Referring to fig. 2, in an embodiment of the present invention, a SIMS secondary ion mass spectrum of a semiconductor laser structure according to an embodiment shown in fig. 2 is provided, so as to obtain actual ion mass spectrum data of the semiconductor laser according to the embodiment of the present invention.
The first lower waveguide layer 102a and the second lower waveguide layer 102b are introduced, wherein the Phillips ionization degree of the first lower waveguide layer 102a is smaller than that of the second lower waveguide layer 102b, so that the divergence angle and the horizontal expansion angle of a laser spot are increased, far-field images are distributed in an elliptical shape and meet Gaussian distribution, FFP with a low aspect ratio is realized, the quality of the spot and a light beam is improved, and the light beam quality factor and the limiting factor of the laser are improved.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that changes and modifications may be made without departing from the principles of the invention, such changes and modifications are also intended to be within the scope of the invention.

Claims (10)

1. A semiconductor laser, comprising:
a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer are sequentially arranged from bottom to top;
the active layer includes a plurality of quantum wells;
the lower waveguide layer comprises a first lower waveguide layer and a second lower waveguide layer;
Wherein the Phillips ionization degree of the first lower waveguide layer is smaller than the Phillips ionization degree of the second lower waveguide layer.
2. A semiconductor laser as claimed in claim 1 wherein the lower waveguide layer is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN.
3. A semiconductor laser according to claim 1, characterized in that the lower waveguide layer comprises a first lower waveguide layer and a second lower waveguide layer, in particular:
the Ga element of the first lower waveguide layer is distributed in a linear function;
the In element of the second lower waveguide layer is distributed as a linear function.
4. A semiconductor laser according to claim 1, characterized in that the phillips ionization degree of the first lower waveguide layer is smaller than the phillips ionization degree of the second lower waveguide layer, in particular:
the Philips ionization degree of the first lower waveguide layer is distributed in a linear function;
the Philips ionization degree of the second lower waveguide layer is distributed in a linear function;
The Phillips ionization degree of the first lower waveguide layer is larger than a first preset value and smaller than that of the second lower waveguide layer, and the Phillips ionization degree of the second lower waveguide layer is smaller than a second preset value.
5. A semiconductor laser according to claim 1, characterized in that the lower waveguide layer comprises a first lower waveguide layer and a second lower waveguide layer, in particular:
the electron mobility of the first lower waveguide layer is distributed in a linear function;
the electron mobility of the second lower waveguide layer is distributed in a linear function;
the electron mobility of the first lower waveguide layer is larger than a third preset value and smaller than that of the second lower waveguide layer, and the electron mobility of the second lower waveguide layer is smaller than a fourth preset value.
6. The semiconductor laser of claim 1, wherein the lower waveguide layer comprises a first lower waveguide layer and a second lower waveguide layer, further comprising:
the thermal conductivity of the first lower waveguide layer is distributed in a linear function;
the thermal conductivity of the second lower waveguide layer is distributed in a linear function;
the thermal conductivity of the second lower waveguide layer is larger than a fifth preset value and smaller than that of the first lower waveguide layer, and the thermal conductivity of the first lower waveguide layer is smaller than a sixth preset value.
7. A semiconductor laser according to claim 1, characterized in that the active layer comprises a plurality of quantum wells, in particular:
the quantum well is a periodic structure consisting of a well layer and a barrier layer;
the cycle number of the quantum well is more than or equal to one and less than or equal to five;
The well layer is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN;
the barrier layer is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN;
the upper waveguide layer is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN;
the upper limiting layer is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN;
The lower limiting layer is any one or any combination of GaN、InGaN、InN、AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga2O3、BN;
The substrate comprises any one of a sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, a sapphire/SiNx, a magnesia-alumina spinel MgAl 2O4、MgO、ZnO、ZrB2、LiAlO2 and a LiGaO 2 composite substrate.
8. The semiconductor laser of claim 4, wherein the quantum well is a periodic structure comprised of a well layer and a barrier layer, further comprising:
The Philips ionization degree of the lower limiting layer is distributed in a linear function;
The Philips ionization degree of the well layer in the quantum well is distributed in a linear function;
The Phillips ionization degree of the lower limiting layer is larger than a seventh preset value and smaller than that of the first lower waveguide layer, the Phillips ionization degree of the first lower waveguide layer is smaller than that of the second lower waveguide layer, and the Phillips ionization degree of the well layer in the quantum well is larger than that of the second lower waveguide layer and smaller than that of the second preset value.
9. The semiconductor laser of claim 5, wherein the quantum well is a periodic structure comprised of a well layer and a barrier layer, further comprising:
The electron mobility of the lower limiting layer is distributed in a linear function;
The electron mobility of the well layer in the quantum well is distributed in a linear function;
The electron mobility of the lower limiting layer is larger than an eighth preset value and smaller than the electron mobility of the first lower waveguide layer, the electron mobility of the second lower waveguide layer is larger than the electron mobility of the first lower waveguide layer and smaller than the electron mobility of the well layer in the quantum well, and the electron mobility of the well layer in the quantum well is smaller than a fourth preset value.
10. The semiconductor laser of claim 6, wherein the quantum well is a periodic structure comprised of a well layer and a barrier layer, further comprising:
the thermal conductivity of the lower limiting layer is distributed in a linear function;
The thermal conductivity of the well layer in the quantum well is distributed in a linear function;
The thermal conductivity of the well layer in the quantum well is larger than a fifth preset value and smaller than that of the second lower waveguide layer, the thermal conductivity of the first lower waveguide layer is larger than that of the second lower waveguide layer and smaller than that of the lower limiting layer, and the thermal conductivity of the lower limiting layer is smaller than a ninth preset value.
CN202410150558.1A 2024-02-02 2024-02-02 Semiconductor laser Pending CN118054305A (en)

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