CN116207613A - Semiconductor laser element provided with stimulated Brillouin scattering layer - Google Patents

Semiconductor laser element provided with stimulated Brillouin scattering layer Download PDF

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Publication number
CN116207613A
CN116207613A CN202310111854.6A CN202310111854A CN116207613A CN 116207613 A CN116207613 A CN 116207613A CN 202310111854 A CN202310111854 A CN 202310111854A CN 116207613 A CN116207613 A CN 116207613A
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China
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layer
brillouin scattering
stimulated brillouin
scattering layer
confinement layer
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CN202310111854.6A
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Inventor
李水清
阚宏柱
请求不公布姓名
王星河
张江勇
马斯特
白怀铭
陆恩
周进泽
牧立一
徐浩翔
韩霖
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Anhui Geen Semiconductor Co ltd
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Anhui Geen Semiconductor Co ltd
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Priority to CN202310111854.6A priority Critical patent/CN116207613A/en
Publication of CN116207613A publication Critical patent/CN116207613A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers

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  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention provides a semiconductor laser element provided with an stimulated Brillouin scattering layer, which relates to the technical field of semiconductor photoelectric devices, and comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer from bottom to top, wherein the upper limiting layer and the lower limiting layer are provided with the stimulated Brillouin scattering layer; the stimulated Brillouin scattering layer is formed by structurally designing differences of an upper limiting layer and a lower limiting layer, such as an Mg/C concentration proportion, an Mg/O concentration proportion, an Mg/H concentration proportion, an Al concentration proportion and the like, so that photon and phonon propagation are limited, phonons in a Brillouin area are limited in a laser, phonon leakage is inhibited, phonon is utilized to manipulate a spectrum of stimulated Brillouin scattering reflection specific wavelength, a Brillouin scattering gain coefficient is improved, optical waveguide absorption loss and internal optical loss are reduced, laser power and slope efficiency are improved, meanwhile, laser modulus is reduced, photon degeneracy is improved, and output laser coherence is improved.

Description

Semiconductor laser element provided with stimulated Brillouin scattering layer
Technical Field
The invention relates to the technical field of semiconductor photoelectric devices, in particular to a semiconductor laser element provided with a stimulated Brillouin scattering layer.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The laser has various types and various classification modes, and mainly comprises solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like. The laser is greatly different from the nitride semiconductor light-emitting diode, 1) the laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level; 2) The current density of the laser reaches KA/cm2, which is more than 2 orders of magnitude higher than that of the nitride light-emitting diode, so that stronger electron leakage, more serious Auger recombination, stronger polarization effect and more serious electron-hole mismatch are caused, and more serious efficiency attenuation drop effect is caused; 3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated; 4) The principle is different: the light emitting diode generates radiation composite luminescence by electron hole transition to a quantum well or a p-n junction under the action of external voltage, and the laser can perform lasing under the condition that the lasing condition is satisfied, the inversion distribution of carriers in an active area is required to be satisfied, stimulated radiation light oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss by satisfying a threshold condition, and finally laser is output. The nitride semiconductor laser has the following problems: 1. the absorption loss of the optical waveguide is high, inherent carbon impurities compensate acceptors in a p-type semiconductor, damage p-type and the like, the ionization rate of p-type doping is low, a large amount of unionized Mg acceptors impurities can cause the increase of internal optical loss, the refractive index dispersion of the laser is realized, the fluctuation of the concentration of high-concentration carriers influences the refractive index of an active layer, the limiting factor is reduced along with the increase of wavelength, and the mode gain of the laser is reduced; 2. the laser wave patterns can be divided into transverse modes and longitudinal and transverse modes; the light intensity distribution of the transverse mode in the section vertical to the optical axis is determined by the waveguide structure of the semiconductor laser, if the transverse mode is complex and unstable, the coherence of the output light is poor; the longitudinal modes are distributed in standing waves in the propagation direction of the resonant cavity, and many longitudinal modes are simultaneously excited or have inter-mode changes, so that high time coherence cannot be obtained.
Disclosure of Invention
The invention aims to provide a semiconductor laser element provided with an stimulated Brillouin scattering layer, which solves the problems existing in the prior art.
A semiconductor laser element provided with an stimulated Brillouin scattering layer comprises a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer in this order from bottom to top, wherein the lower confinement layer (101) and the upper confinement layer (106) form a stimulated Brillouin scattering layer (107).
As a preferable technical scheme of the invention, the concentration ratio of Mg/C of the upper limit layer of the stimulated Brillouin scattering layer, which is tested by a SIMS secondary ion mass spectrometer, is larger than or equal to the concentration ratio of Si/C of the lower limit layer.
As a preferable technical scheme of the invention, the ratio of the Mg/O concentration of the upper limiting layer of the stimulated Brillouin scattering layer, which is tested by the SIMS secondary ion mass spectrometer, is larger than or equal to the ratio of the Si/O concentration of the lower limiting layer.
As a preferable technical scheme of the invention, the concentration ratio of Mg/H of the upper limiting layer of the stimulated Brillouin scattering layer, which is tested by the SIMS secondary ion mass spectrometer, is smaller than or equal to the concentration ratio of Si/H of the lower limiting layer.
As a preferable technical scheme of the invention, the concentration of Al in the upper limiting layer of the stimulated brillouin scattering layer, which is tested by the SIMS secondary ion mass spectrometer, is less than or equal to the concentration of Al in the lower limiting layer.
As a preferable technical scheme of the invention, the stimulated Brillouin scattering layer is formed by structurally designing the upper limiting layer and the lower limiting layer to form differences of Mg/C concentration ratio, mg/O concentration ratio, mg/H concentration ratio, al concentration and the like, so that photon and phonon propagation are limited, phonons in a Brillouin zone are limited in a laser, phonon leakage is inhibited, phonon is utilized to manipulate a spectrum of stimulated Brillouin scattering reflection specific wavelength, a Brillouin scattering gain coefficient is improved, optical waveguide absorption loss and internal optical loss are reduced, laser power and slope efficiency are improved, and meanwhile, laser modulus is reduced, photon degeneracy is improved, and output laser coherence is improved.
As a preferable technical scheme of the invention, the concentration ratio of Mg/C, mg/O and Mg/H of the upper limiting layer of the stimulated Brillouin scattering layer is 10-500, and the concentration ratio of Si/C, si/O and Si/H of the lower limiting layer is 5-100.
As a preferable technical scheme of the invention, the lower limiting layer, the lower waveguide layer, the active layer, the upper waveguide layer, the electron blocking layer and the upper limiting layer comprise GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of multiple elements of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP.
As a preferred technique of the present inventionThe substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, a sapphire/SiNx, a sapphire/SiO 2/SiNx composite substrate and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
Compared with the prior art, the invention has the beneficial effects that:
in the scheme of the invention:
the upper limiting layer and the lower limiting layer are provided with stimulated Brillouin scattering layers; the stimulated Brillouin scattering layer is formed by structurally designing differences of an upper limiting layer and a lower limiting layer, such as an Mg/C concentration proportion, an Mg/O concentration proportion, an Mg/H concentration proportion, an Al concentration proportion and the like, so that photon and phonon propagation are limited, phonons in a Brillouin area are limited in a laser, phonon leakage is inhibited, phonon is utilized to manipulate a spectrum of stimulated Brillouin scattering reflection specific wavelength, a Brillouin scattering gain coefficient is improved, optical waveguide absorption loss and internal optical loss are reduced, laser power and slope efficiency are improved, meanwhile, laser modulus is reduced, photon degeneracy is improved, and output laser coherence is improved.
Drawings
Fig. 1 is a schematic structural diagram of a semiconductor laser device provided with an stimulated brillouin scattering layer according to the present invention.
Fig. 2 is a schematic diagram of SIMS secondary ion mass spectrometry in a semiconductor laser device provided with an stimulated brillouin scattering layer according to the present invention.
The figures indicate:
100: a substrate; 101: a lower confinement layer; 102: a lower waveguide layer; 103: an active layer; 104: upper waveguide layer, 105: electron blocking layer, 106: upper confinement layer, 107: stimulated brillouin scattering layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. It will be apparent that the described embodiments are some, but not all, embodiments of the invention.
Thus, the following detailed description of the embodiments of the invention is not intended to limit the scope of the invention, as claimed, but is merely representative of some embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, under the condition of no conflict, the embodiments of the present invention and the features and technical solutions in the embodiments may be combined with each other.
Referring to fig. 1-2, the present embodiment provides a technical solution: a semiconductor laser element provided with an stimulated brillouin scattering layer, comprising, in order from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106, characterized in that: an stimulated brillouin scattering layer 107 is arranged between the lower confinement layer 101 and the upper confinement layer 106; the Mg/C concentration ratio of the upper confinement layer of the stimulated brillouin scattering layer 107, which is measured by the SIMS secondary ion mass spectrometer, is equal to or greater than the Si/C concentration ratio of the lower confinement layer; the Mg/O concentration ratio of the upper confinement layer of the stimulated brillouin scattering layer 107, which is measured by the SIMS secondary ion mass spectrometer, is equal to or greater than the Si/O concentration ratio of the lower confinement layer; the Mg/H concentration ratio of the upper confinement layer of the stimulated brillouin scattering layer 107, which is measured by the SIMS secondary ion mass spectrometer, is less than or equal to the Si/H concentration ratio of the lower confinement layer; the Al concentration of the upper limiting layer of the stimulated Brillouin scattering layer 107, which is tested by a SIMS secondary ion mass spectrometer, is less than or equal to that of the lower limiting layer; the stimulated brillouin scattering layer 107 is formed by structurally designing differences of an upper limiting layer and a lower limiting layer, such as an Mg/C concentration ratio, an Mg/O concentration ratio, an Mg/H concentration ratio, an Al concentration ratio and the like, so that photon and phonon propagation are limited, phonons in a brillouin zone are limited in a laser, phonon leakage is inhibited, phonon is utilized to manipulate a spectrum of stimulated brillouin scattering reflection specific wavelength, a brillouin scattering gain coefficient is improved, optical waveguide absorption loss and internal optical loss are reduced, laser power and slope efficiency are improved, and meanwhile, laser modulus is reduced, photon degeneracy is improved, and output laser coherence is improved; the ratio of the concentration of Mg/C, mg/O and the concentration of Mg/H of the upper limiting layer of the stimulated Brillouin scattering layer 107 are 10-500, and the ratio of the concentration of Si/C, si/O and the concentration of Si/H of the lower limiting layer are 5-100;
the lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 comprise GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of multiple elements of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP.
The substrate 100 comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, a sapphire/SiNx, a sapphire/SiO 2/SiNx composite substrate, and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
Compared with the prior art, the invention has the advantages that: the upper limiting layer and the lower limiting layer are provided with stimulated Brillouin scattering layers; the stimulated Brillouin scattering layer is formed by structurally designing differences of an upper limiting layer and a lower limiting layer, such as an Mg/C concentration proportion, an Mg/O concentration proportion, an Mg/H concentration proportion, an Al concentration proportion and the like, so that photon and phonon propagation are limited, phonons in a Brillouin area are limited in a laser, phonon leakage is inhibited, phonon is utilized to manipulate a spectrum of stimulated Brillouin scattering reflection specific wavelength, a Brillouin scattering gain coefficient is improved, optical waveguide absorption loss and internal optical loss are reduced, laser power and slope efficiency are improved, meanwhile, laser modulus is reduced, photon degeneracy is improved, and output laser coherence is improved.
The above embodiments are only for illustrating the present invention and not for limiting the technical solutions described in the present invention, and although the present invention has been described in detail in the present specification with reference to the above embodiments, the present invention is not limited to the above specific embodiments, and thus any modifications or equivalent substitutions are made to the present invention; all technical solutions and modifications thereof that do not depart from the spirit and scope of the invention are intended to be included in the scope of the appended claims.

Claims (9)

1. A semiconductor laser element provided with an stimulated brillouin scattering layer, comprising, in order from bottom to top, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), an electron blocking layer (105), and an upper confinement layer (106), characterized in that: the lower confinement layer (101) and the upper confinement layer (106) form an stimulated Brillouin scattering layer (107).
2. A semiconductor laser element provided with an stimulated brillouin scattering layer as claimed in claim 1, wherein the upper confinement layer of the stimulated brillouin scattering layer (107) has a Mg/C concentration ratio as measured by a SIMS secondary ion mass spectrometer of equal to or greater than that of the lower confinement layer.
3. A semiconductor laser element provided with an stimulated brillouin scattering layer according to claim 1, wherein an Mg/O concentration ratio of an upper confinement layer (106) of the stimulated brillouin scattering layer (107) as measured by a SIMS secondary ion mass spectrometer is equal to or greater than an Si/O concentration ratio of a lower confinement layer (101).
4. A semiconductor laser element provided with an stimulated brillouin scattering layer according to claim 1, wherein an Mg/H concentration ratio of an upper confinement layer (106) of the stimulated brillouin scattering layer (107) as measured by a SIMS secondary ion mass spectrometer is equal to or less than a Si/H concentration ratio of a lower confinement layer (101).
5. A semiconductor laser element provided with an stimulated brillouin scattering layer according to claim 1, wherein an Al concentration of an upper confinement layer (106) of the stimulated brillouin scattering layer (107) is equal to or less than an Al concentration of a lower confinement layer (101) as measured by a SIMS secondary ion mass spectrometer.
6. A semiconductor laser element provided with an stimulated brillouin scattering layer according to claim 1, wherein the stimulated brillouin scattering layer (107) is formed by structurally designing differences of Mg/C concentration ratio, mg/O concentration ratio, mg/H concentration ratio, al concentration ratio, and the like by an upper confinement layer (106) and a lower confinement layer (101) so as to limit photon and phonon propagation, limit phonons in a brillouin region in a laser, suppress phonon leakage, manipulate a spectrum of a specific wavelength by using phonon to reflect stimulated brillouin scattering, improve a brillouin scattering gain coefficient, reduce optical waveguide absorption loss and internal optical loss, improve laser power and slope efficiency, and simultaneously reduce laser modulus, improve photon degeneracy, and improve output laser coherence.
7. A semiconductor laser element provided with an stimulated brillouin scattering layer as claimed in claim 2, characterized in that the upper confinement layer (106) of the stimulated brillouin scattering layer (107) has Mg/C, mg/O and Mg/H concentration ratios of 10 to 500, respectively, and the lower confinement layer (101) has Si/C, si/O and Si/H concentration ratios of 5 to 100, respectively.
8. A semiconductor laser element provided with an stimulated brillouin scattering layer as claimed in claim 1, wherein the lower confinement layer (101), lower waveguide layer (102), active layer (103), upper waveguide layer (104), electron blocking layer (105), upper confinement layer (106) comprise GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga 2 O 3 Any one or any combination of multiple elements of BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP.
9. A semiconductor laser element provided with an stimulated brillouin scattering layer according to claim 1, wherein the substrate (100) comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, a sapphire/SiNx, a sapphire/SiO 2/SiNx composite substrate, a magnesium aluminate spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
CN202310111854.6A 2023-02-14 2023-02-14 Semiconductor laser element provided with stimulated Brillouin scattering layer Pending CN116207613A (en)

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