CN117498154A - Gallium nitride-based semiconductor laser - Google Patents
Gallium nitride-based semiconductor laser Download PDFInfo
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- CN117498154A CN117498154A CN202311493163.3A CN202311493163A CN117498154A CN 117498154 A CN117498154 A CN 117498154A CN 202311493163 A CN202311493163 A CN 202311493163A CN 117498154 A CN117498154 A CN 117498154A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 39
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 239000002245 particle Substances 0.000 claims abstract description 37
- 230000004888 barrier function Effects 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 230000015556 catabolic process Effects 0.000 claims abstract description 14
- 230000000670 limiting effect Effects 0.000 claims abstract description 14
- 230000000737 periodic effect Effects 0.000 claims abstract description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 12
- 239000010980 sapphire Substances 0.000 claims description 12
- 239000002131 composite material Substances 0.000 claims description 10
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 6
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052596 spinel Inorganic materials 0.000 claims description 6
- 239000011029 spinel Substances 0.000 claims description 6
- 229910010093 LiAlO Inorganic materials 0.000 claims description 3
- 229910020068 MgAl Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- -1 zrB 2 Inorganic materials 0.000 claims description 3
- 230000005855 radiation Effects 0.000 abstract description 10
- 239000000969 carrier Substances 0.000 abstract description 6
- 230000006798 recombination Effects 0.000 abstract description 6
- 238000005215 recombination Methods 0.000 abstract description 6
- 238000010521 absorption reaction Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 230000001427 coherent effect Effects 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000000370 acceptor Substances 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 229910017115 AlSb Inorganic materials 0.000 description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000005699 Stark effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
- H01S5/309—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a gallium nitride-based semiconductor laser which sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer from bottom to top, and is characterized in that the active layer is provided with a particle number inversion quantum well; the particle number inversion quantum well is a periodic structure consisting of a well layer and a barrier layer; the electron mobility a of the barrier layer of the particle number inversion quantum well is smaller than or equal to the electron mobility b of the well layer; the breakdown field strength c of the barrier layer of the particle number inversion quantum well is larger than or equal to the breakdown field strength d of the well layer; and the electron affinity energy e of the barrier layer of the particle number inversion quantum well is smaller than or equal to the electron affinity energy f of the well layer. The invention improves the particle number inversion efficiency of the active layer, enables the number of electrons at the bottom of the conduction band of the active layer to be far larger than the number of holes at the top of the valence band, promotes unbalanced carriers to generate particle number inversion between the energy bands of the active layer, and enhances the stimulated radiation efficiency generated by the recombination of highly degenerated electrons and holes.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectric devices, in particular to a gallium nitride-based semiconductor laser.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, atomic clock, ranging, spectrum analysis, cutting, submarine communication, precision welding, quantum sensor, high-density optical storage and the like. The laser has various types and various classification modes, and mainly comprises solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state semiconductor laser has the advantages of good monochromaticity, good directivity, small volume, high brightness, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like.
The laser is largely different from the nitride semiconductor light emitting diode,
1) The laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level;
2) Use of lasers current densities up to KA/cm 2 More than 2 orders of magnitude higher than nitride light emitting diodes, thereby causing stronger electron leakage, more severe auger recombination, stronger polarization effect, more severe electron-hole mismatch, resulting in more severe efficiency decay Droop effect;
3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated;
4) The principle is different: the light emitting diode generates radiation composite luminescence by transferring electron holes to an active layer or a p-n junction under the action of external voltage, and the laser can perform lasing only when the lasing condition is satisfied, the inversion distribution of carriers in an active area is necessarily satisfied, the stimulated radiation oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss when the threshold condition is satisfied, and finally laser is output.
The nitride semiconductor laser has the following problems:
1) The lattice mismatch and strain of the active layer are greatly induced to generate a strong voltage electric polarization effect, a strong QCSE quantum confinement Stark effect is generated, the energy band of a quantum well is inclined, the valence band difference of a laser is increased, hole injection is inhibited, holes are more difficult to transport in the quantum well, carrier injection is uneven, the overlapping probability of an electron-hole wave function is reduced, so that uneven gain of the laser is caused, the radiation recombination efficiency is reduced, and the improvement of the electric lasing gain of the laser is limited;
2) The light absorption loss in the laser comprises impurity absorption loss, carrier absorption loss, waveguide structure side wall scattering loss, quantum well absorption loss and the like; the optical waveguide impurity absorption loss is high, intrinsic carbon impurities compensate acceptors in a p-type semiconductor, damage the p-type semiconductor and the like, the ionization rate of p-type doping is low (below 10 percent), a large amount of unionized Mg acceptor impurities (above 90 percent) generate self-compensation effect and cause internal optical loss to rise, so that the slope efficiency of a laser is reduced and the threshold current is increased; and refractive index dispersion of the laser, high concentration carrier concentration fluctuation affects the refractive index of the active layer, and the limiting factor decreases with the increase of wavelength, resulting in the decrease of mode gain of the laser.
Disclosure of Invention
The invention provides a gallium nitride-based semiconductor laser, which improves the particle number inversion efficiency of an active layer, enables the number of electrons at the bottom of a conduction band of the active layer to be far larger than the number of holes at the top of a valence band, promotes unbalanced carriers to generate particle number inversion between energy bands of the active layer, enhances stimulated radiation efficiency generated by the recombination of highly degenerated electrons and holes, improves laser oscillation and amplification, and improves coherent output efficiency of laser.
The invention provides a gallium nitride-based semiconductor laser which sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer from bottom to top, wherein the active layer is provided with a particle number inversion quantum well; the particle number inversion quantum well is a periodic structure formed by a well layer and a barrier layer, and the number of periods is m is more than or equal to 1 and less than or equal to 3; the electron mobility a of the barrier layer of the particle number inversion quantum well is smaller than or equal to the electron mobility b of the well layer; the breakdown field strength c of the barrier layer of the particle number inversion quantum well is larger than or equal to the breakdown field strength d of the well layer; and the electron affinity energy e of the barrier layer of the particle number inversion quantum well is smaller than or equal to the electron affinity energy f of the well layer.
Preferably, the well layer of the particle number inversion quantum well is GaN, inGaN, inN, alInN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 One or a combination of more than one of BN, the thickness of g is more than or equal to 5 and less than or equal to 100 angstroms, and the luminous wavelength is 200-2000 nm; the barrier layer of the particle number inversion quantum well is GaN, inGaN, inN, alInN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 And one or a combination of more than one of BN, wherein the thickness of h is more than or equal to 10 and less than or equal to 200.
Preferably, the electron mobility profile of the population inversion quantum well has a profile of a function y=asin (bx+c); the breakdown field intensity distribution of the particle number inversion quantum well has a curve distribution of a function y=dsin (ex+f); the electron affinity distribution of the population inversion quantum well has a profile of a function y=gsin (hx+i); the electron mobility distribution, the breakdown field intensity distribution and the electron affinity distribution of the particle number inversion quantum well have the following relation: g is more than or equal to D is more than or equal to A.
Preferably, the lower waveguide layer is GaN, inGaN, inN, alInN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 Any one or any combination of a plurality of BN, wherein the thickness i is more than or equal to 10 and less than or equal to 9000 meters;
preferably, the upper waveguide layer is GaN, inGaN, inN,AlInN、AlInGaN、AlN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga 2 O 3 Any one or any combination of a plurality of BN, wherein the thickness j is more than or equal to 10 and less than or equal to 9000 meters;
preferably, the lower confinement layer is GaN, inGaN, inN, alInN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 And one or a combination of a plurality of BN, wherein the thickness k is more than or equal to 10 and less than or equal to 90000.
Preferably, the upper confinement layer is GaN, inGaN, inN, alInN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 And one or a combination of more than one of BN, wherein the thickness of l is more than or equal to 10 and less than or equal to 80000.
Preferably, the substrate comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, gaSb, inSb, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 MgO, znO, mgO, spinel, zrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
Compared with the prior art, the gallium nitride-based semiconductor laser provided by the embodiment of the invention has the beneficial effects that: the invention improves the particle number inversion efficiency of the active layer, enables the number of electrons at the bottom of a conduction band of the active layer to be far greater than the number of holes at the top of a valence band, promotes unbalanced carriers to generate particle number inversion between energy bands of the active layer, enhances stimulated radiation efficiency generated by the recombination of highly degenerated electrons and holes, improves laser oscillation and amplification, and improves coherent output efficiency of laser; meanwhile, the limiting effect of the laser light field on the upper waveguide layer and the lower waveguide layer is enhanced, overlapping of the light field and structures above the upper waveguide layer and below the lower waveguide layer is reduced, absorption loss of an unionized Mg acceptor to the light field, carrier absorption loss and impurity defect absorption loss are reduced, light absorption loss of a laser is reduced, and limiting factors, laser power and slope efficiency are improved.
Drawings
Fig. 1 is a schematic structural view of a gallium nitride-based semiconductor laser according to an embodiment of the present invention;
FIG. 2 is a TEM transmission electron microscope image of the lower confinement layer of a GaN-based semiconductor laser according to an embodiment of the invention;
reference numerals: 100: a substrate; 101: a lower confinement layer; 102: a lower waveguide layer; 103: an active layer; 104: an upper waveguide layer; 105: and (5) an upper limiting layer.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In order to solve the above-mentioned problems, a gallium nitride-based semiconductor laser provided in the embodiments of the present application will be described and illustrated in detail by the following specific examples.
Referring to fig. 1-2, the gallium nitride-based semiconductor laser provided by the invention sequentially comprises a substrate 100, a lower limiting layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104 and an upper limiting layer 105 from bottom to top, wherein the active layer 103 is provided with a particle number inversion quantum well; the particle number inversion quantum well is a periodic structure formed by a well layer and a barrier layer, and the number of periods is m is more than or equal to 1 and less than or equal to 3; the electron mobility a of the barrier layer of the particle number inversion quantum well is smaller than or equal to the electron mobility b of the well layer; the breakdown field strength c of the barrier layer of the particle number inversion quantum well is larger than or equal to the breakdown field strength d of the well layer; and the electron affinity energy e of the barrier layer of the particle number inversion quantum well is smaller than or equal to the electron affinity energy f of the well layer. Wherein the granulesThe well layer of the quantum-inversion quantum well is GaN, inGaN, inN, alInN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 One or a combination of more than one of BN, the thickness of g is more than or equal to 5 and less than or equal to 100 angstroms, and the luminous wavelength is 200-2000 nm; the barrier layer of the particle number inversion quantum well is GaN, inGaN, inN, alInN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 And one or a combination of more than one of BN, wherein the thickness of h is more than or equal to 10 and less than or equal to 200.
In a specific embodiment, the electron mobility profile of the population inversion quantum well has a profile of a function y=asin (bx+c); the breakdown field intensity distribution of the particle number inversion quantum well has a curve distribution of a function y=dsin (ex+f); the electron affinity distribution of the population inversion quantum well has a profile of a function y=gsin (hx+i); the electron mobility distribution, the breakdown field intensity distribution and the electron affinity distribution of the particle number inversion quantum well have the following relation: g is more than or equal to D is more than or equal to A.
In the present invention, the lower waveguide layer 102 is GaN, inGaN, inN, alInN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 And one or a combination of more than one of BN, wherein the thickness i is more than or equal to 10 and less than or equal to 9000 meters. The upper waveguide layer 104 is GaN, inGaN, inN, alInN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 Any one or any combination of a plurality of BN, wherein the thickness j is more than or equal to 10 and less than or equal to 9000 meters; the lower limiting layer 101 is GaN, inGaN, inN, alInN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、GaSb、InSb、InAs、AlGaSb、AlSb、InGaSb、AlGaAsSb、InGaAsSb、SiC、Ga 2 O 3 And one or a combination of a plurality of BN, wherein the thickness k is more than or equal to 10 and less than or equal to 90000. The upper confinement layer 105 is GaN, inGaN, inN, alInN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 One or a combination of more than one of BN and BN, wherein the thickness of l is more than or equal to 10 and less than or equal to 80000 angstroms; the substrate 100 includes sapphire, silicon, ge, siC, alN, gaN, gaAs, gaSb, inSb, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 MgO, znO, mgO, spinel, zrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
The invention improves the particle number inversion efficiency of the active layer, enables the number of electrons at the bottom of the conduction band of the active layer to be far larger than the number of holes at the top of the valence band, promotes unbalanced carriers to generate particle number inversion between the energy bands of the active layer, enhances the stimulated radiation efficiency generated by the recombination of highly degenerated electrons and holes, improves the laser oscillation and amplification, and improves the coherent output efficiency of laser. The invention also provides parameter comparison with the traditional laser and variation amplitude, and the following table is specifically referred.
| Blue laser-item | Traditional laser | The laser of the invention | Amplitude of variation |
| Slope efficiency (W/A) | 1.1 | 2.83 | 157％ |
| Threshold current Density (kA/cm) 2 ) | 2.4 | 0.67 | -72％ |
| Optical power (W) | 5.9 | 15.2 | 158％ |
| Limiting factor | 1.40％ | 3.27％ | 134％ |
| Internal optical loss (cm) -1 ) | 17.2 | 6.7 | -61％ |
The foregoing is merely a preferred embodiment of the present invention, and it should be noted that modifications and variations could be made by those skilled in the art without departing from the technical principles of the present invention, and such modifications and variations should also be regarded as being within the scope of the invention.
Claims (10)
1. The gallium nitride-based semiconductor laser sequentially comprises a substrate (100), a lower limiting layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104) and an upper limiting layer (105) from bottom to top, wherein the active layer (103) is provided with a particle number inversion quantum well.
2. The gallium nitride-based semiconductor laser according to claim 1, wherein the particle number inversion quantum well is a periodic structure consisting of a well layer and a barrier layer, and the number of periods is m is 1-3; and the electron mobility a of the barrier layer of the particle number inversion quantum well is smaller than or equal to the electron mobility b of the well layer.
3. A gallium nitride-based semiconductor laser according to claim 1, wherein a breakdown field strength c of a barrier layer of the population inversion quantum well is equal to or greater than a breakdown field strength d of a well layer; and the electron affinity energy e of the barrier layer of the particle number inversion quantum well is smaller than or equal to the electron affinity energy f of the well layer.
4. A gallium nitride-based semiconductor laser according to claim 1, wherein the well layers of the population inversion quantum well are GaN, inGaN, inN, alInN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, al InP, alGaP, inGaP, gaSb, inSb, inAs, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 One or a combination of more than one of BN, the thickness of g is more than or equal to 5 and less than or equal to 100 angstroms, and the luminous wavelength is 200-2000 nm; the barrier layer of the particle number inversion quantum well is GaN, inGaN, inN, alInN, alInGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, gaSb, inSb, inAs, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 And one or a combination of more than one of BN, wherein the thickness of h is more than or equal to 10 and less than or equal to 200.
5. A gallium nitride-based semiconductor laser according to claim 1, wherein the electron mobility profile of the population inversion quantum well has a profile of function y = Asin (bx+c); the breakdown field intensity distribution of the particle number inversion quantum well has a curve distribution of a function y=dsin (ex+f); the electron affinity distribution of the population inversion quantum well has a profile of a function y=gsin (hx+i); the electron mobility distribution, the breakdown field intensity distribution and the electron affinity distribution of the particle number inversion quantum well have the following relation: g is more than or equal to D is more than or equal to A.
6. A gallium nitride-based semiconductor laser according to claim 1, wherein the lower waveguide layer (102) is GaN, inGaN, inN, alInN, al InGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, al InAs, al InP, alGaP, inGaP, gaSb, inSb, inAs, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 And one or a combination of more than one of BN, wherein the thickness i is more than or equal to 10 and less than or equal to 9000 meters.
7. A gallium nitride-based semiconductor laser according to claim 1, wherein the upper waveguide layer (104) is GaN, inGaN, inN, alInN, al InGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, al InAs, al InP, alGaP, inGaP, gaSb, inSb, inAs, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 And one or a combination of more than one of BN, wherein the thickness of j is more than or equal to 10 and less than or equal to 9000 meters.
8. A gallium nitride-based semiconductor laser according to claim 1, wherein the lower confinement layer (101) is GaN, inGaN, inN, alInN, al InGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, al InAs, al InP, alGaP, inGaP, gaSb, inSb, inAs, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 And one or a combination of a plurality of BN, wherein the thickness k is more than or equal to 10 and less than or equal to 90000.
9. A gallium nitride-based semiconductor laser according to claim 1, wherein saidThe upper confinement layer (105) is GaN, inGaN, inN, alInN, al InGaN, alN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, al InAs, al InP, alGaP, inGaP, gaSb, inSb, inAs, alGaSb, alSb, inGaSb, alGaAsSb, inGaAsSb, siC, ga 2 O 3 And one or a combination of more than one of BN, wherein the thickness of l is more than or equal to 10 and less than or equal to 80000.
10. A gallium nitride-based semiconductor laser according to claim 1, wherein the substrate (100) comprises sapphire, silicon, ge, siC, alN, gaN, gaAs, gaSb, inSb, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiN x Magnesia-alumina spinel MgAl 2 O 4 MgO, znO, mgO, spinel, zrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
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