CN116995533A - Semiconductor laser element with multiple vacancy electron phonon regulating layer - Google Patents

Semiconductor laser element with multiple vacancy electron phonon regulating layer Download PDF

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CN116995533A
CN116995533A CN202310936612.0A CN202310936612A CN116995533A CN 116995533 A CN116995533 A CN 116995533A CN 202310936612 A CN202310936612 A CN 202310936612A CN 116995533 A CN116995533 A CN 116995533A
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蔡鑫
王星河
黄军
刘紫涵
张会康
蒙磊
季徐芳
陈三喜
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Anhui Geen Semiconductor Co ltd
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Anhui Geen Semiconductor Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The application provides a semiconductor laser element with multiple vacancy electronic phonon regulating layers, which is formed by sequentially arranging a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electronic blocking layer and an upper limiting layer from bottom to top, wherein the multiple vacancy electronic phonon regulating layers are arranged between the upper limiting layer and the upper waveguide layer and/or between the lower limiting layer and the lower waveguide layer. The multiple vacancy electron phonon regulating layer forms a single vacancy, vacancy group and multiple vacancy regulating electron phonon structure, forms a phonon-polariton whispering gallery effect, reduces phonon vibration and phonon transportation, improves heat dissipation of a laser element, improves thermal mismatch between epitaxial layers, improves thermal stability and thermal degradation of the laser element, improves electron hole transmission efficiency, improves carrier concentration saturation of an active layer after lasing, reduces series resistance and voltage of the laser element, improves radiation recombination efficiency of an active layer of the laser element, reduces an excitation threshold of the laser element, and improves optical power and slope efficiency of the laser element.

Description

Semiconductor laser element with multiple vacancy electron phonon regulating layer
Technical Field
The application relates to the field of semiconductor photoelectric devices, in particular to a semiconductor laser element with multiple vacancy electron phonon regulating layers.
Background
The laser is widely applied to the fields of laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precise welding, high-density optical storage and the like. The laser has various types and various classification modes, and mainly comprises solid, gas, liquid, semiconductor, dye and other types of lasers; compared with other types of lasers, the all-solid-state semiconductor laser has the advantages of small volume, high efficiency, light weight, good stability, long service life, simple and compact structure, miniaturization and the like.
The laser is largely different from the nitride semiconductor light emitting diode:
1) The laser is generated by stimulated radiation generated by carriers, the half-width of a spectrum is small, the brightness is high, the output power of a single laser can be in W level, the nitride semiconductor light-emitting diode is spontaneous radiation, and the output power of the single light-emitting diode is in mW level;
2) Use of lasers current densities up to KA/cm 2 More than 2 orders of magnitude higher than nitride light emitting diodes, thereby causing stronger electron leakage, more severe auger recombination, stronger polarization effect, more severe electron-hole mismatch, resulting in more severe efficiency decay Droop effect;
3) The light-emitting diode emits self-transition radiation, no external effect exists, incoherent light transiting from a high energy level to a low energy level, the laser is stimulated transition radiation, the energy of an induced photon is equal to the energy level difference of electron transition, and the full coherent light of the photon and the induced photon is generated;
4) The principle is different: the light emitting diode generates radiation composite luminescence by transferring electron holes to an active layer or a p-n junction under the action of external voltage, and the laser can perform lasing only when the lasing condition is satisfied, the inversion distribution of carriers in an active area is necessarily satisfied, the stimulated radiation oscillates back and forth in a resonant cavity, light is amplified by propagation in a gain medium, the gain is larger than loss when the threshold condition is satisfied, and finally laser is output.
The nitride semiconductor laser has the following problems:
1) The valence band step difference of the laser is increased, the hole is more difficult to transport in the quantum well, the carrier injection is uneven, and the gain is uneven; after the laser is excited, the carrier concentration of the active region of the multiple quantum well is saturated, the bipolar conductivity effect is weakened, the series resistance of the laser is increased, and the voltage of the laser is increased;
2) The increase of the In component of the quantum well can generate fluctuation and strain of the In component, the gain spectrum of the laser is widened, and the peak gain is reduced; the In component of the quantum well is increased, the thermal stability is deteriorated, the high-temperature p-type semiconductor and the growth of the limiting layer can cause thermal degradation of the active layer, and the quality of the active layer and the interface quality are reduced; the internal defect density of the active layer is high, the intersolubility gap between InN and GaN is large, inN phase separation segregation, thermal degradation and non-ideal crystal quality are caused, so that the quantum well quality and interface quality are non-ideal, and the non-radiative composite center is enhanced;
3) The laser has large current, large current density and large heat generation, and the heat dissipation of the device is poor, so that the problems of rising threshold current, declining slope efficiency and the like caused by thermal mismatch between semiconductor epitaxial layers can be aggravated.
Disclosure of Invention
In order to solve one of the technical problems, the application provides a semiconductor laser element with multiple vacancy electron phonon regulating layers.
The embodiment of the application provides a semiconductor laser element with multiple vacancy electron phonon regulation layers, which comprises the following steps ofThe substrate, the lower limiting layer, the lower waveguide layer, the active layer, the upper waveguide layer, the electron blocking layer and the upper limiting layer are sequentially arranged on the upper part, multiple vacancy electron phonon regulating layers are arranged between the upper limiting layer and the upper waveguide layer and/or between the lower limiting layer and the lower waveguide layer, and the multiple vacancy electron phonon regulating layers are 2D-MoS 2 @0D-ZnO、2D-WS 2 @0D-CdS、2D-MoTe 2 @0D-NiO 7 A multidimensional Gao Jiechao lattice structure of any one or any combination of 2D-hBN@0D-CdSe and 2D-PbS@0D-PbSe.
Preferably, any combination of the multiple vacancy electron phonon regulating layers comprises a multi-dimensional Gao Jiechao lattice structure of the binary combination of:
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS,
2D-MoS 2 @0D-ZnO/2D-MoTe 2 @0D-NiO 7 ,
2D-MoS 2 @0D-ZnO/2D-hBN@0D-CdSe,
2D-MoS 2 @0D-ZnO/2D-PbS@0D-PbSe,
2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 ,
2D-WS 2 @0D-CdS/2D-hBN@0D-CdSe,
2D-WS 2 @0D-CdS/2D-PbS@0D-PbSe,
2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe,
2D-MoTe 2 @0D-NiO 7 /2D-PbS@0D-PbSe,
2D-hBN@0D-CdSe/2D-PbS@0D-PbSe。
preferably, any combination of the multiple vacancy electron phonon regulating layers comprises a multi-dimensional Gao Jiechao lattice structure of the following ternary combination:
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 ,
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-hBN@0D-CdSe,
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-PbS@0D-PbSe,
2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe,
2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 /2D-PbS@0D-PbSe,
2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe/2D-PbS@0D-PbSe。
preferably, any combination of the multiple vacancy electron phonon regulating layers comprises a multi-dimensional Gao Jiechao lattice structure of the quaternary combination of:
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe,
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 /2D-PbS@0D-PbSe,
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-hBN@0D-CdSe/2D-PbS@0D-Pb Se,
2D-MoS 2 @0D-ZnO/2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe/2D-PbS@0D-PbSe,
2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe/2D-PbS@0D-PbSe。
preferably, any combination of the multiple vacancy electron phonon regulating layers comprises a multidimensional Gao Jiechao lattice structure of the following five-membered combination: 2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe/2D-PbS@0D-PbSe。
Preferably, the thickness of the multiple vacancy electron phonon regulating layer is 5nm to 500nm.
Preferably, the active layer is a periodic structure consisting of a well layer and a barrier layer, and the period number is 3-1;
the well layer of the active layer is InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Any one or any combination of BN and diamond, and the thickness is 10 to 80 Emi;
the barrier layer of the active layer is InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP,AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga 2 O 3 Any one or any combination of BN and diamond, and the thickness is 10 to 120 Emi.
Preferably, the lower confinement layer is InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Any one or any combination of BN and diamond, the thickness is 50nm to 5000nm, and the doping concentration of Si is 1E18cm -3 To 1E20cm -3 ；
The lower and upper waveguide layers are InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Any one or any combination of BN and diamond, the thickness is 50nm to 1000nm, and the doping concentration of Si is 1E16cm -3 To 5E19cm -3 。
Preferably, the electron blocking layer and the upper confinement layer are InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Any one or any combination of BN and diamond, the thickness is 20nm to 1000nm, and the doping concentration of Mg is 1E18cm -3 To 1E20cm -3 。
Preferably, the substrate comprises sapphire, silicon, ge, siC, alN, diamond, cu, mo, tiW, cuW, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiNx, sapphire/SiO 2 SiNx composite substrate and magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
The beneficial effects of the application are as follows: according to the application, a single vacancy, vacancy group and multi-vacancy regulation electronic phonon structure can be formed by arranging the multi-vacancy electronic phonon regulation layer in the semiconductor laser element, a phonon-polariton whispering gallery effect is formed between the electronic phonon local upper limit layer and the upper waveguide layer and/or between the lower limit layer and the lower waveguide layer, phonon polaritons are limited between the upper waveguide layer and the lower waveguide layer, phonon vibration and phonon transportation are reduced, the heat dissipation of the laser element is improved, the thermal mismatch between epitaxial layers is improved, the thermal stability of the laser element is improved, the thermal degradation is improved, and meanwhile, the electron hole transmission efficiency is improved, the carrier concentration saturation of an active layer after laser is improved, the series resistance and the voltage of the laser element are reduced, so that the radiation recombination efficiency of the active layer of the laser element is improved, the excitation threshold value of the laser element is reduced, the light power and the slope efficiency of the laser element are improved, and the light attenuation of more than 1 ten thousand hours is reduced to within 10%.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute a limitation on the application. In the drawings:
FIG. 1 is a schematic structural diagram of a semiconductor laser device with multiple vacancy electron phonon regulating layers according to embodiment 1 of the present application;
FIG. 2 is a schematic structural diagram of a semiconductor laser device with multiple vacancy electron phonon-modulating layers according to embodiment 2 of the present application;
fig. 3 is a schematic structural diagram of a semiconductor laser device with multiple vacancy electron phonon-modulating layers according to embodiment 3 of the present application.
Reference numerals:
100. a substrate, 101, a lower confinement layer, 102, a lower waveguide layer, 103, an active layer, 104, an upper waveguide layer, 105, an electron blocking layer, 106, an upper confinement layer, 107, and a multiple vacancy electron phonon regulation layer.
Detailed Description
In order to make the technical solutions and advantages of the embodiments of the present application more apparent, the following detailed description of exemplary embodiments of the present application is provided in conjunction with the accompanying drawings, and it is apparent that the described embodiments are only some embodiments of the present application and not exhaustive of all embodiments. It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other.
Example 1
As shown in fig. 1, the present embodiment proposes a semiconductor laser element having multiple vacancy electron phonon regulating layers. The semiconductor laser element comprises a substrate 100, a lower limiting layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105 and an upper limiting layer 106 which are sequentially arranged from bottom to top, wherein a multiple vacancy electron phonon regulating layer 107 is arranged between the lower limiting layer 101 and the lower waveguide layer 102.
Specifically, in the present embodiment, the multiple vacancy electronic phonon regulating layer 107 is provided between the lower confinement layer 101 and the lower waveguide layer 102. The multiple vacancy electron phonon regulating layer 107 is a multi-dimensional high-order superlattice structure with a thickness of between 5nm and 500nm. The multiple vacancy electron phonon regulating layer 107 may be 2D-MoS 2 @0D-ZnO、2D-WS 2 @0D-CdS、2D-MoTe 2 @0D-NiO 7 A multidimensional Gao Jiechao lattice structure of any one or any combination of 2D-hBN@0D-CdSe and 2D-PbS@0D-PbSe. The multiple vacancy electron phonon regulating layer 107 can form a single vacancy, vacancy group and multiple vacancy regulating electron phonon structure, electron phonon is locally arranged between the lower limiting layer 101 and the lower waveguide layer 102, phonon vibration and phonon transportation are reduced, heat dissipation of the laser element is improved, thermal mismatch between epitaxial layers is improved, thermal stability of the laser element is improved, thermal degradation is improved, meanwhile, electron hole transmission efficiency is improved, carrier concentration saturation of the active layer 103 after laser is improved, voltage of the laser element is reduced, radiation recombination efficiency of the active layer 103 of the laser element is improved, excitation threshold of the laser element is reduced, and light power and slope efficiency of the laser element are improved.
More specifically, in this embodiment, any combination of the multiple vacancy electronic phonon-regulating layers 107 includes a binary combination of a multidimensional Gao Jiechao lattice structure, a ternary combination of a multidimensional Gao Jiechao lattice structure, a quaternary combination of a multidimensional Gao Jiechao lattice structure and a five-membered combination of a multidimensional Gao Jiechao lattice structure, and the specific combination forms are as follows:
(1) Binary combined multidimensional Gao Jiechao lattice structure
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS,
2D-MoS 2 @0D-ZnO/2D-MoTe 2 @0D-NiO 7 ,
2D-MoS 2 @0D-ZnO/2D-hBN@0D-CdSe,
2D-MoS 2 @0D-ZnO/2D-PbS@0D-PbSe,
2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 ,
2D-WS 2 @0D-CdS/2D-hBN@0D-CdSe,
2D-WS 2 @0D-CdS/2D-PbS@0D-PbSe,
2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe,
2D-MoTe 2 @0D-NiO 7 /2D-PbS@0D-PbSe,
2D-hBN@0D-CdSe/2D-PbS@0D-PbSe。
(2) Ternary combined multidimensional Gao Jiechao lattice structure
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 ,
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-hBN@0D-CdSe,
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-PbS@0D-PbSe,
2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe,
2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 /2D-PbS@0D-PbSe,
2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe/2D-PbS@0D-PbSe。
(3) Four-element combined multidimensional Gao Jiechao lattice structure
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe,
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 /2D-PbS@0D-PbSe,
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-hBN@0D-CdSe/2D-PbS@0D-PbSe,
2D-MoS 2 @0D-ZnO/2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe/2D-PbS@0D-PbSe,
2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe/2D-PbS@0D-PbSe。
(4) Five-membered combined multidimensional Gao Jiechao lattice structure
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe/2D-PbS@0D-PbSe。
Further, the active layer 103 in this embodiment is a periodic structure composed of a well layer and a barrier layer, and the number of periods is 3 not less than m not less than 1. The well layer of the active layer 103 is InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Any one or any combination of BN and diamond, and the thickness is 10 to 80 Emi. The barrier layer of the active layer 103 is InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Any one or any combination of BN and diamond, and the thickness is 10 to 120 Emi.
The lower confinement layer 101 is InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Any one or any combination of BN and diamond, the thickness is 50nm to 5000nm, and the doping concentration of Si is 1E18cm -3 To 1E20cm -3 。
The lower waveguide layer 102 and the upper waveguide layer 104 are InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Any one or any combination of BN and diamond, the thickness is 50nm to 1000nm, and the doping concentration of Si is 1E16cm -3 To 5E19cm -3 。
Electron blockingLayer 105 and upper confinement layer 106 are InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Any one or any combination of BN and diamond, the thickness is 20nm to 1000nm, and the doping concentration of Mg is 1E18cm -3 To 1E20cm -3 。
The substrate 100 includes sapphire, silicon, ge, siC, diamond, mo, cu, tiW, cuW, alN, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate 100, sapphire/AlN composite substrate 100, sapphire/SiNx, sapphire/SiO 2 Composite SiNx substrate 100, magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any of the composite substrates 100.
Example 2
As shown in fig. 2, the present embodiment proposes a semiconductor laser device having multiple vacancy electron phonon regulating layers. The semiconductor laser element comprises a substrate 100, a lower limiting layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105 and an upper limiting layer 106 which are sequentially arranged from bottom to top, wherein a multiple vacancy electron phonon regulating layer 107 is arranged between the upper limiting layer 106 and the upper waveguide layer 104.
Specifically, in the present embodiment, the multiple vacancy electronic phonon regulating layer 107 is disposed between the upper confinement layer 106 and the upper waveguide layer 104. The multiple vacancy electron phonon regulating layer 107 is a multi-dimensional high-order superlattice structure with a thickness of between 5nm and 500nm. The multiple vacancy electron phonon regulating layer 107 may be 2D-MoS 2 @0D-ZnO、2D-WS 2 @0D-CdS、2D-MoTe 2 @0D-NiO 7 A multidimensional Gao Jiechao lattice structure of any one or any combination of 2D-hBN@0D-CdSe and 2D-PbS@0D-PbSe. The multiple vacancy electron phonon regulating layer 107 can form a single vacancy, vacancy group and multiple vacancy regulating electron phonon structure, and can reduce phonon vibration and phonon transportation between the electron phonon local upper limiting layer 106 and the upper waveguide layer 104, improve heat dissipation of the laser element and thermal mismatch between epitaxial layers, improve thermal stability of the laser element and thermal degradation, and simultaneouslyThe electron hole transmission efficiency is improved, the carrier concentration saturation of the active layer 103 after lasing is improved, and the voltage of the laser element is reduced, so that the radiation recombination efficiency of the active layer 103 of the laser element is improved, the excitation threshold of the laser element is reduced, and the light power and slope efficiency of the laser element are improved.
More specifically, in this embodiment, any combination of the multiple vacancy electronic phonon-regulating layers 107 includes a binary combination of a multidimensional Gao Jiechao lattice structure, a ternary combination of a multidimensional Gao Jiechao lattice structure, a quaternary combination of a multidimensional Gao Jiechao lattice structure and a five-membered combination of a multidimensional Gao Jiechao lattice structure, and the specific combination forms are as follows:
(1) Binary combined multidimensional Gao Jiechao lattice structure
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS,
2D-MoS 2 @0D-ZnO/2D-MoTe 2 @0D-NiO 7 ,
2D-MoS 2 @0D-ZnO/2D-hBN@0D-CdSe,
2D-MoS 2 @0D-ZnO/2D-PbS@0D-PbSe,
2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 ,
2D-WS 2 @0D-CdS/2D-hBN@0D-CdSe,
2D-WS 2 @0D-CdS/2D-PbS@0D-PbSe,
2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe,
2D-MoTe 2 @0D-NiO 7 /2D-PbS@0D-PbSe,
2D-hBN@0D-CdSe/2D-PbS@0D-PbSe。
(2) Ternary combined multidimensional Gao Jiechao lattice structure
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 ,
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-hBN@0D-CdSe,
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-PbS@0D-PbSe,
2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe,
2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 /2D-PbS@0D-PbSe,
2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe/2D-PbS@0D-PbSe。
(3) Four-element combined multidimensional Gao Jiechao lattice structure
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe,
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 /2D-PbS@0D-PbSe,
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-hBN@0D-CdSe/2D-PbS@0D-Pb Se,
2D-MoS 2 @0D-ZnO/2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe/2D-PbS@0D-PbSe,
2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe/2D-PbS@0D-PbSe。
(4) Five-membered combined multidimensional Gao Jiechao lattice structure
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe/2D-PbS@0D-PbSe。
Further, the active layer 103 in this embodiment is a periodic structure composed of a well layer and a barrier layer, and the number of periods is 3 not less than m not less than 1. The well layer of the active layer 103 is InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Any one or any combination of BN and diamond, and the thickness is 10 to 80 Emi. The barrier layer of the active layer 103 is InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Any one or any combination of BN and diamond, and the thickness is 10 to 120 Emi.
The lower confinement layer 101 is InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga 2 O 3 Any one or any combination of BN and diamond, the thickness is 50nm to 5000nm, and the doping concentration of Si is 1E18cm -3 To 1E20cm -3 。
The lower waveguide layer 102 and the upper waveguide layer 104 are InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Any one or any combination of BN and diamond, the thickness is 50nm to 1000nm, and the doping concentration of Si is 1E16cm -3 To 5E19cm -3 。
The electron blocking layer 105 and the upper confinement layer 106 are InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Any one or any combination of BN and diamond, the thickness is 20nm to 1000nm, and the doping concentration of Mg is 1E18cm -3 To 1E20cm -3 。
The substrate 100 includes sapphire, silicon, ge, siC, alN, diamond, cu, mo, tiW, cuW, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate 100, sapphire/AlN composite substrate 100, sapphire/SiNx, sapphire/SiO 2 Composite SiNx substrate 100, magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any of the composite substrates 100.
Example 3
As shown in fig. 3, the present embodiment proposes a semiconductor laser element having multiple vacancy electron phonon regulating layers. The semiconductor laser element comprises a substrate 100, a lower limiting layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105 and an upper limiting layer 106 which are sequentially arranged from bottom to top, wherein multiple vacancy electron phonon regulating layers 107 are arranged between the upper limiting layer 106 and the upper waveguide layer 104 and between the lower limiting layer 101 and the lower waveguide layer 102.
Specifically, in the present embodiment, the multiple vacancy electronic phonon regulating layer 107 is disposed on the upper confinement layer106 with the upper waveguide layer 104 and between the lower confinement layer 101 and the lower waveguide layer 102. The multiple vacancy electron phonon regulating layer 107 is a multi-dimensional high-order superlattice structure with a thickness of between 5nm and 500nm. The multiple vacancy electron phonon regulating layer 107 may be 2D-MoS 2 @0D-ZnO、2D-WS 2 @0D-CdS、2D-MoTe 2 @0D-NiO 7 A multidimensional Gao Jiechao lattice structure of any one or any combination of 2D-hBN@0D-CdSe and 2D-PbS@0D-PbSe. The multiple vacancy electron phonon regulating layer 107 can form a single vacancy, vacancy group and multiple vacancy regulating electron phonon structure, electron phonon is locally arranged between the upper limiting layer 106 and the upper waveguide layer 104 and between the lower limiting layer 101 and the lower waveguide layer 102, phonon vibration and phonon transportation are reduced, heat dissipation of the laser element is improved, thermal mismatch between epitaxial layers is improved, thermal stability of the laser element is improved, thermal degradation is improved, meanwhile electron hole transmission efficiency is improved, carrier concentration saturation of the active layer 103 after laser emission is improved, voltage of the laser element is reduced, radiation recombination efficiency of the active layer 103 of the laser element is improved, excitation threshold of the laser element is reduced, and light power and slope efficiency of the laser element are improved.
More specifically, in this embodiment, any combination of the multiple vacancy electronic phonon-regulating layers 107 includes a binary combination of a multidimensional Gao Jiechao lattice structure, a ternary combination of a multidimensional Gao Jiechao lattice structure, a quaternary combination of a multidimensional Gao Jiechao lattice structure and a five-membered combination of a multidimensional Gao Jiechao lattice structure, and the specific combination forms are as follows:
(1) Binary combined multidimensional Gao Jiechao lattice structure
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS,
2D-MoS 2 @0D-ZnO/2D-MoTe 2 @0D-NiO 7 ,
2D-MoS 2 @0D-ZnO/2D-hBN@0D-CdSe,
2D-MoS 2 @0D-ZnO/2D-PbS@0D-PbSe,
2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 ,
2D-WS 2 @0D-CdS/2D-hBN@0D-CdSe,
2D-WS 2 @0D-CdS/2D-PbS@0D-PbSe,
2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe,
2D-MoTe 2 @0D-NiO 7 /2D-PbS@0D-PbSe,
2D-hBN@0D-CdSe/2D-PbS@0D-PbSe。
(2) Ternary combined multidimensional Gao Jiechao lattice structure
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 ,
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-hBN@0D-CdSe,
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-PbS@0D-PbSe,
2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe,
2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 /2D-PbS@0D-PbSe,
2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe/2D-PbS@0D-PbSe。
(3) Four-element combined multidimensional Gao Jiechao lattice structure
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe,
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 /2D-PbS@0D-PbSe,
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-hBN@0D-CdSe/2D-PbS@0D-Pb Se,
2D-MoS 2 @0D-ZnO/2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe/2D-PbS@0D-PbSe,
2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe/2D-PbS@0D-PbSe。
(4) Five-membered combined multidimensional Gao Jiechao lattice structure
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe/2D-PbS@0D-PbSe。
Further, the methodThe active layer 103 in this embodiment is a periodic structure composed of a well layer and a barrier layer, and the number of periods is 3 not less than m not less than 1. The well layer of the active layer 103 is InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Any one or any combination of BN and diamond, and the thickness is 10 to 80 Emi. The barrier layer of the active layer 103 is InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Any one or any combination of BN and diamond, and the thickness is 10 to 120 Emi.
The lower confinement layer 101 is InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Any one or any combination of BN and diamond, the thickness is 50nm to 5000nm, and the doping concentration of Si is 1E18cm -3 To 1E20cm -3 。
The lower waveguide layer 102 and the upper waveguide layer 104 are InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Any one or any combination of BN and diamond, the thickness is 50nm to 1000nm, and the doping concentration of Si is 1E16cm -3 To 5E19cm -3 。
The electron blocking layer 105 and the upper confinement layer 106 are InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Any one or any combination of BN and diamond, the thickness is 20nm to 1000nm, and the doping concentration of Mg is 1E18cm -3 To 1E20cm -3 。
The substrate 100 includes sapphire, silicon, ge, siC, alN, diamond, cu, mo, tiW, cuW, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate 100, sapphire/AlN composite substrate 100, sapphire/SiNx, sapphire/SiO 2 Composite SiNx substrate 100, magnesia-alumina spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any of the composite substrates 100.
The following table shows the comparison of the performance parameters of the semiconductor laser device proposed by the present application and the conventional semiconductor laser device:
it can be seen that the semiconductor laser element with multiple vacancy electron phonon regulation layers provided by the application can effectively improve the radiation recombination efficiency of the active layer 103 of the laser element, reduce the excitation threshold of the laser element and improve the optical power and slope efficiency of the laser element.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present application without departing from the spirit or scope of the application. Thus, it is intended that the present application also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.

Claims (10)

1. A semiconductor laser element with multiple vacancy electron phonon regulating layer comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer sequentially arranged from bottom to top, and is characterized in that multiple vacancy electron phonon regulating layers are arranged between the upper limiting layer and the upper waveguide layer and/or between the lower limiting layer and the lower waveguide layer, and the multiple vacancy electron phonon regulating layers are 2D-MoS 2 @0D-ZnO、2D-WS 2 @0D-CdS、2D-MoTe 2 @0D-NiO 7 A multidimensional Gao Jiechao lattice structure of any one or any combination of 2D-hBN@0D-CdSe and 2D-PbS@0D-PbSe.
2. The semiconductor laser device as claimed in claim 1, wherein any combination of the multiple vacancy electron phonon-modulating layers comprises a multi-dimensional Gao Jiechao lattice structure of the binary combination of:
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS,
2D-MoS 2 @0D-ZnO/2D-MoTe 2 @0D-NiO 7 ,
2D-MoS 2 @0D-ZnO/2D-hBN@0D-CdSe,
2D-MoS 2 @0D-ZnO/2D-PbS@0D-PbSe,
2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 ,
2D-WS 2 @0D-CdS/2D-hBN@0D-CdSe,
2D-WS 2 @0D-CdS/2D-PbS@0D-PbSe,
2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe,
2D-MoTe 2 @0D-NiO 7 /2D-PbS@0D-PbSe,
2D-hBN@0D-CdSe/2D-PbS@0D-PbSe。
3. the semiconductor laser device as claimed in claim 1, wherein any combination of the multiple vacancy electron phonon-modulating layers comprises a multi-dimensional Gao Jiechao lattice structure of the ternary combination of:
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 ,
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-hBN@0D-CdSe,
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-PbS@0D-PbSe,
2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe,
2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 /2D-PbS@0D-PbSe,
2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe/2D-PbS@0D-PbSe。
4. the semiconductor laser device as claimed in claim 1, wherein any combination of the multiple vacancy electron phonon-modulating layers comprises a multi-dimensional Gao Jiechao lattice structure of the quaternary combination of:
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe,
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 /2D-PbS@0D-PbSe,
2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-hBN@0D-CdSe/2D-PbS@0D-PbSe,
2D-MoS 2 @0D-ZnO/2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe/2D-PbS@0D-PbSe,
2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe/2D-PbS@0D-PbSe。
5. the semiconductor laser device as claimed in claim 1, wherein any combination of the multiple vacancy electron phonon regulating layers includes a multi-dimensional Gao Jiechao lattice structure of five-membered combination of: 2D-MoS 2 @0D-ZnO/2D-WS 2 @0D-CdS/2D-MoTe 2 @0D-NiO 7 /2D-hBN@0D-CdSe/2D-PbS@0D-PbSe。
6. The semiconductor laser device according to claim 1, wherein the thickness of the multiple vacancy electron phonon-controlling layer is 5nm to 500nm.
7. The semiconductor laser device according to claim 1, wherein the active layer has a periodic structure comprising a well layer and a barrier layer, and the number of periods is 3.gtoreq.m.gtoreq.1;
the well layer of the active layer is InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Any one or any combination of BN and diamond, and the thickness is 10 to 80 Emi;
the barrier layer of the active layer isInGaN、InN、GaN、AlInGaN、AlN、AlGaN、AlInN、GaAs、GaP、InP、AlGaAs、AlInGaAs、AlGaInP、InGaAs、AlInAs、AlInP、AlGaP、InGaP、SiC、Ga 2 O 3 Any one or any combination of BN and diamond, and the thickness is 10 to 120 Emi.
8. The semiconductor laser device as claimed in claim 1, wherein the lower confinement layer is InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Any one or any combination of BN and diamond, the thickness is 50nm to 5000nm, and the doping concentration of Si is 1E18cm -3 To 1E20cm -3 ；
The lower and upper waveguide layers are InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Any one or any combination of BN and diamond, the thickness is 50nm to 1000nm, and the doping concentration of Si is 1E16cm -3 To 5E19cm -3 。
9. The semiconductor laser device as claimed in claim 1, wherein the electron blocking layer and the upper confinement layer are InGaN, inN, gaN, alInGaN, alN, alGaN, alInN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, inGaP, siC, ga 2 O 3 Any one or any combination of BN and diamond, the thickness is 20nm to 1000nm, and the doping concentration of Mg is 1E18cm -3 To 1E20cm -3 。
10. The semiconductor laser device as claimed in claim 1, wherein the substrate comprises sapphire, silicon, ge, siC, alN, diamond, cu, mo, tiW, cuW, gaN, gaAs, inP, sapphire/SiO 2 Composite substrate, sapphire/AlN composite substrate, sapphire/SiNx, sapphire/SiO 2 SiNx composite substrate and magnesia-alumina spinelMgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 And LiGaO 2 Any one of the composite substrates.
CN202310936612.0A 2023-07-28 2023-07-28 Semiconductor laser element with multiple vacancy electron phonon regulating layer Pending CN116995533A (en)

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